Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
The Korean Institute of Electrical and Electronic Material Engineers
- Annual
2010.06a
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We investigated the influence of the indium content on the threshold voltage (
$V_{th}$ ) shift of sol-gel-derived indium-gallium-zinc oxide (IGZO) thin film transistors (TFTs). Surplus indium composition ratio into IGZO decreases the value of$V_{th}$ of IGZO TFTs showed huge$V_{th}$ shift in the negative direction.$V_{th}$ shift decreases from 10 to -28.2V as Indium composition ratio is increased. Because the free electron density is increased according to variation of the Indium composition ratio. -
Single-crystalline IGZO (Indium-Gallium-Zinc oxide) was fabricated on c-sapphire substrate. Single crystal ZnO was used as a buffer layer, and post-annealing was treated in
$900^{\circ}C$ for crystallization of IGZO. Crystallized IGZO formed superlattice structure spontaneously induced to c-axis direction by ZnO butTer layer, the composition of IGZO was varied by amount of ZnO. Crystallinity and composition of IGZO was analyzed by X-ray Diffraction and Transmission Electron Microscopy. -
Gallium Nitride(GaN)는 LED, Laser 등에 사용되는 광학적 특성뿐만 아니라 Wide Bandgap의 전기적 특성 또한 주목받고 있다. 본 논문은 600V급 GaN(Gallium Nitride) Power SIT(Static Induction Transistor)에 대해서 Design Parameter 변환에 따른 전기적 (Breakdown Voltgage, On-state Voltage Drop)특성과 열적 (Lattice Temperature Distribution)특성변화를 분석하여 소자가 갖는 구조적 손실을 최소화하였다. 또한, 기존 실리콘 기반 전력소자와 특성 비교를 통하여 GaN Power SIT의 우수성을 증명하였다. GaN Power SIT 소자 설계 및 최적화를 위해서 Silvaco사의 소자 시뮬레이터인 ATLAS를 사용하였다. 실험 결과 수
${\mu}m$ 의 소자 두께만으로도 실리콘 전력소자에 비해 더 뛰어난 열 특성과 더 적은 전력소모를 갖는 600V급 GaN Power SIT 소자를 구현할 수 있었다. -
This paper describes that single crystal cubic silicon (3C-SiC) films have been deposited on carbonized Si(100) substrate using hexamethyldisilane(HMDS,
$Si_2(CH_3)_6$ ) as a safe organosilane single-source precursor and a nonflammable mixture of Ar and$H_2$ gas as the carrier gas by APCVD at$1280^{\circ}C$ . The 3C-SiC film had a very good crystal quality without defects due to viods, a very low residual stress. -
Indium tin oxide (ITO) - SWNT nano crystalline composites was synthesized at low temperature(
${\sim}250^{\circ}C$ )using Nano Cluster Deposition technique by Metal Orhoganic Chemical Vapor Deposition method. XRD patterns of ITO- SWNT composite shows pure cubic phases without any secondary phase. I-V measurement gives resistance of 12 ohms for Sn doped (3 wt %) indium oxide-SWNT composites. The electrical conductivity of the nano composites is significantly enhanced compared to the SWNT. -
외부전하를 감지할 수 있는 EEPROM 구조를 기반으로 한 센서를 제안하였다. 부유게이트로부터 확장된 큰 면적의 접촉부위 (CCM)는 외부전하를 고정화하도록 설계되었으며,
$0.13{\mu}m$ 단일-다결정 CMOS 공정에 적합한 적층의 금속-절연체-금속 (MIM) 제어케이트구조로 구성되었다. N-채널 EEPROM의 CCW 캐패시터 영역에 양의 전압이 인가되면 제어 게이트의 문턱전압이 음의 방향으로 변화하여 드레인 전류는 증가하는 특성을 보였다. 또한 이미 충전된 외부 캐패시터가 CCW의 부유게이트의 금속영역에 직접 연결되면, 외부 캐패시터로부터 유입된 양의 전하는 n-채널 EEPROM의 드레인 전류를 증가시키지만 반면에 음의 전하는 이를 감소시켰다. 외부 전압과 전하에 의해 PMOS의 특성은 NMOS에 비교하여 반대로 나타남이 확인되었다. EEPROM 인버터의 CCW 영역에 외부전하를 연결하면 인버터의 입-출력 특성이 기준 시료에 비해 외부전하의 극성에 따라 변화하였다. 그러므로, EEPROM 인버터는 외부전하를 감지하여 부유게이트에 고정된 전하의 밀도 크기에 따라 출력을 전압으로 표현할 수 있음을 확인하였다. -
In this paper, High Brightness LED driver IC using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. The LED current ripple of the designed IC is in
${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses$1{\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre(Cadence) simulation. -
ESD (Electrostatic Discharge) phenomenon occurs in everywhere and especially it damages to semiconductor devices. For ESD protection, there are some devices such as diode, GGNMOS (Gate-Grounded NMOS), SCR (Silicon-Controlled Rectifier), etc. Among them, diode and GGNMOS are usually chosen because of their small size, even though SCR has greater current capability than GGNMOS. In this paper, a novel SCR is proposed on the SOI (Silicon-On-Insulator) structure which has
$1{\mu}m$ film thickness. In order to design and confirm the proposed SCR, TSUPREM4 and MEDICI simulators are used, respectively. According to the simulation result, although the proposed SCR has more compact size, it's electrical performance is better than electrical characteristics of conventional GGNMOS. -
Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be
$SiO_2$ as gate dielectric layer. The$SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as$HfO_2$ ,$ZrO_2$ ,$SiN_x$ ,$TiO_2$ ,$Al_2O_3$ . Among the High-k materials,$Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature$Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown$Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl :$HNO_3$ = 3:1,$Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and$O_2$ /Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at$300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter. -
Time dependence of the shift of the threshold voltage of amorphous hafnium-indium-zinc oxide (a-HIZO) has been reported under on-current stress condition. a-HIZO thin films were deposited on
$SiO_2$ /Si (100) by rf magnetron sputtering. XPS measurement indicates that the Hf metal cations in a-HIZO system after annealing process reduce oxygen vacancies by binding oxygen. It was found that the Hf metal cation can be effectively incorporated in the IZO thin films as a suppressor against both the oxygen deficiencies and the carrier generation in the ZnO-based system. -
Yang, Seung-Dong;Oh, Jae-Sub;Park, Jeong-Gyu;Jeong, Kwang-Seok;Kim, Yu-Mi;Yun, Ho-Jin;Lee, Ga-Won 13
In this paper, the electrical characteristics of Fin-type SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) flash memory and Planar-type SONOS flash memory are analyzed. Compared to the Planar-type SONOS device, Fin-type SONOS device shows a good short channel effect immunity. Moreover, memory characteristics such as PIE speed, Endurance and Retention of FinFET SONOS flash are batter than that of conventional Planar-type SONOS flash memory. -
A high voltage current sensing circuit for LED driver IC is designed and verfied by Cadence SPECTRE simulations. The current mirror pair, power and sensing MOSFETs with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side LDMOST switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35um BCD process show that current sensing is accurate with properly frequency compensated opamp.
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Cha, Yu-Joung;Kim, Chul-Min;Jeong, Young-Hun;Lee, Young-Jin;Paik, Jong-Hoo;Lee, Woo-Young;Kim, Dae-Joon 15
$Na_2Ti_6O_{13}$ (NT)가 도핑된$BaTiO_3-(Bi_{0.5}Na_{0.5})TiO_3$ BBNT) PTCR 세라믹스를 변형된 세라믹공정을 이용하여 제조하였다. 제조된 BBNT 세라믹의 미세구조와 PTCR 특성에 미치는 NT의 효과를 조사하였다.$1300^{\circ}C$ 에서 합성된 BBNT 세라믹은 NT의 도핑량이 증가함에 따라 비정상적으로 성장된 입자의 수가 증가하였다. 뿐만 아니라, NT의 도핑량 증가는 상온비저항을 약간 증가시켰지만 큐리온도 (Tc) 부근의 최대비저항/최소비저항으로 정의되는 PTC 점프 특성을 크게 향상시켰다. 특히, 0.01mol%의 NT 도핑 시 상온비저항은$425\;\Omega{\cdot}cm$ , PTC 점프는 ($2.02{\times}^10^5$ ) 저항온도계수는 69.8% 및 Tc는$155^{\circ}C$ 의 우수한 결과를 나타내었다. -
The multilayer piezoelectric transformer was manufactured using
$Pb(Zn_{1/2}W_{1/2})O_3-Pb(Mn_{1/3}Nb_{2/3})O_3-Pb(Zr_{0.48}Ti_{0.52})O_3$ (abbreviated as PZW-PMN-PZT) ceramics and their electrical properties were investigated. The$k_{eff}$ of the input and the output calculated from the resonant and anti-resonant frequencies were 0.403 and 0.233, respectively. The voltage step-up ratio showed the maximum value in the vicinity of 81kHz. The multilayer piezoelectric transformer showed the temperature rise of about$36^{\circ}C$ at the output power of 12w. -
We investigate CO gas sensing properties of multilayered TiO2 thin film gas sensors fabricated by colloidal templating of 300 nm of polymer spheres. Compared with plain films, the multilayered films show enhanced gas sensing with higher sensitivity and faster response. Also, colloidal templating by using smaller spheres (300 nm in diameter) leads to close-packed multilayered TiO2 thin films with very large-scale. This result suggest that understanding and control of the structures on the sensing properties of multilayered TiO2 thin films by colloidal templating is important in developing the films for real applications.
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전기적 에너지를 기계적 에너지로 변환하고 또한, 기계적 에너지를 전기적 에너지로 변환할 수 있는 압전 세라믹스는 압전 변압기 (piezoelectric transformer), 초음파 모터, 센서 등과 같은 응용분야에 광범위하게 사용되고 있다. 특히, 전원장치에 있어서 현재 주요 전자제품에 사용되고 있는 권선형 변압기와 같은 전자 변환기의 대체품으로 압전 세라믹스 소재의 특성을 이용한 압전변압기의 개발과 응용연구는 국내외적으로 활발히 연구되어왔다. 압전변압기는 권선형 변압기와 비교 하였을 때 누설자속이 없어 노이즈 발생이 없고, 공진주파수만을 이용하므로 출력의 파형이 정현파에 가까워 고조파 잡음이 없으며, 불연성의 특징을 가지고 있다. 추가적으로 압전 변압기는 소형화, 슬림화, 경량화가 가능하며 90%이상의 높은 효율을 얻을 수 있다. 또한, 단판형 압전변압기의 출력한계를 개선하기 위해 높은 승압비와 고출력을 갖는 적층타입의 압전변압기가 제안되었다. 압전변압기용 조성 세라믹스는 높은 에너지 변환효율을 위해서 전기기계결합계수 (
$k_p$ )가 커야 하며, 발열에 의한 온도 상승을 억제하기 위하여 기계적 품질계수(Qm)가 큰 것이 바람직하다. 또한, 높은 전류를 발생하기 위해서는 유전상수가 커 압전변압기의 출력측 정전용량을 크게 하여야한다. 이러한 압전변압기의 제작 조건을 위해 우수한 압전 및 유전특성을 갖는 PZT계 세라믹스가 주로 사용 되어져 왔다. 그러나, PZT계 세라믹스의 우수한 압전 및 유전특성에도 불구하고$1000^{\circ}C$ 에서 급격히 휘발하는 PbO의 성질 때문에 환경적으로나 인체의 건강문제로 인해 전세계적으로 그 사용량을 제한하고 있다. 또한 적층 압전변압기의 구조적 특성상 내부전극과 함께 소결하여야 하는데, 이때 소결온도가 높으면 값비싼 Pd합량이 높은 전극을 사용하여야 한다. Pd함량이 10%미만인 Ag/Pd 전극을 사용하기 위해서는$950^{\circ}C$ 이하에서 저온소결이 가능한 세라믹스 제조가 필수적이라 할 수 있다. 소결온도를 낮추는 방법으로는 다른 물질들을 치환하여 소결온도를 낮추는 방법과 미세분말을 만들어 그레인사이즈를 미세화 하는 방법들이 있다. 많은 미세 분말 제조 방법 중에서 Attrition mill은 일반적인 ball mill에 비해 분말의 입도를 미세하게 할 수 있어 증가된 분말의 비표면적에 의하여 반응을 촉진시킴으로써 저온소결이 가능한 세라믹스를 만들 수 있다. 따라서 본 연구에서는 소결온도가 낮으면서도 유전 및 압전특성이 우수한 조성을 사용하여 적층 압전변압기를 제작하여 전기적 특성을 조사하였다. -
Lee, Joo-Hee;Kim, Chang-Il;Kim, Chul-Min;Paik, Jong-Hoo;Cho, Jeong-Ho;Jeon, Myeong-Pyo;Jeong, Young-Hun;Lee, Young-Jin 19
현재 산업에서 높은 정밀성과 설치의 간편함으로 이용량이 증가하고 있는 초음파 유량계는 압전진동자를 사용하여 측정을 한다. 일반적으로 초음파 유량계에서 초음파를 발생하고 수신하는 압전 세라믹 진동자의 경우 대부분$200^{\circ}C$ 이상의 고온에서는 사용이 불가능하다. 따라서 고온에서의 이용을 위한 사용가능 온도의 영역을 개선하기 위한 조성이나 구조적인 변화가 필요하였고, 조성변화에 있어서는 한계가 있기 때문에 구조 측면에서 접근하고자 하였다. 초음파 유량계의 구조에 있어 외접형 도파관 방식을 선택하였으며, 도파관의 길이, 방열판의 개수, 재질 등의 변수에 대하여 시뮬레이션을 하였다. 시뮬레이션 결과를 바탕으로 얻어진 결과에 대하여 샘플을 제작하였으며, 압전 진동자에 도달되는 온도를 평가 하였을 시 방열판에 대한 온도감소효과를 얻을 수 있었다. -
The effect of excimer laser annealing on the structural and dielectric behaviors of
$PbZr_{0.52}Ti_{0.48}O_3$ (PZT) thin films has been investigated. The amorphous PZT thin films were prepared on Pt/Ti/$SiO_2$ /Si substrates by a sol-gel method. The PZT precursor was prepared from lead acetate, zirconium acetylacetonate, and titanium isopropoxide. The starting materials were dissolved in n-propanol and 1,3-propanediol. After, the amorphous PZT thin films were laser-annealed (using KrF excimer laser) as a function of the laser energy density and the number of laser pulse. Structural properties of PZT thin films are characterized by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The dielectric characterization was done on a RT66A test system and a Agilent 4294A impedance analyzer. The PZT thin films show that excimer laser irradiation drastically improved the crystallization and dielectric properties of the PZT thin films, depending on the energy density and the pulse number. -
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0.1~5.0 at% CuO doped ZnO specimens were fabricated by a commercial ceramic process and sintered at 900~
$1200^{\circ}C$ for 3h in air. The relative densities were over 97% for all samples and average grain size increased with CuO doping. The defect trap levels i.e. ionization energies of defects were increased linearly with CuO contents as 0.2 eV to 0.7 eV by using admittance spectroscopy and dielectric functions. The apparent activation energies of grain boundaries were varied but in the range of 0.96~1.1 eV. Dielectric constant were increased with CuO contents and sintering temperatures. -
The
$Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO)-Bi composite films sandwiched by an$Al_2O_3$ protection layer exhibited a linear increase of a dielectric constant with increasing thickness and the 1000nm-thick BMNO-Bi composite films showed a dielectric constant (~220) higher than that of its bulk material (~210), keeping a low leakage current density of about$0.1{\mu}A/cm^2$ . An enhancement of the dielectric constant in the BMNO-Bi composite films was attributed to the hybrid model combined by a space charge polarization, dipolar response, and nano-capacitors. On the other hand, 1000nm-thick BMNO-Bi composite films sandwiched by 40nm-thick BMNO layer exhibited a dielectric constant of about 450 at 100 kHz and a leakage current density of$0.1{\mu}A/cm^2$ at 6V. -
대형구조물의 구조안정성 진단, 로봇과 같은 지능기계의 제어, 환경오염을 감지하기 위한 센서의 중요성은 날로 증대되고 있다. 이러한 센서의 감도와 성능을 높이기 위해서 소형화, 다기능화, 집적화가 요구되고 있는데, 고성능 센서소자들의 집적화를 위해서 기존에 적용된 벌크형태의 재료들을 박막화하여 다층적층 및 소형화할 필요가 있다. 집적화 센서의 구현에 있어서 전극박막은 센서의 특성을 좌우하는 중요한 역할을 한다. 일반적으로 금속박막이 전극으로 사용되고 있으나 열적 불안정성 및 박리현상의 문제점을 지니고 있다. 따라서 이를 해결하기 위해 전도성산화막을 전극으로 적용하고자하는 연구가 요구되고 있다. 전도성산화막을 전극으로 적용하면 센서소자의 성능이 개선되는 경향이 있다.
$Sr_2FeMoO_6$ (SFMO) 산화물은 자기장을 인가했을 때 저항이 감소하는 CMR(colossal magnetoresistance) 물질이며 상온비저항이 낮은 것으로 알려져 있다. 이중 페롭스카이트 (double perovskite) 구조를 갖는$Sr_2FeMoO_6$ 박막은 센서소자의 전극으로 적용 가능할 것으로 생각되어 박막을 제조하고자 하였으며 미세구조와 전기전도 특성을 조사하였다. 박막제조를 위해서는 RF 스퍼터법을 사용하였다. 스퍼터를 위한 타겟은 고상반응법으로 분말타겟을 제조하였다. Ar/$O_2$ 가스 유랑변화, 압력변화, 기판 온도변화가 박막의 상형성 등 박막특성에 미치는 영향을 조사하였다. 기판으로는$SiO_2$ (100nm)/Si 기판을 사용하였다. 증착직후에는 비정질막이 얻어졌으며 SFMO 상을 만들기 위해서는 후열처리가 필요하였는데, 환원성 가스 분위기 [$H_2$ (5%)/Ar] 에서 열처리 조건을 최적화하여 이중 페롭스카이트 구조의 단일상 박막을 제조할 수 있었다. SFMO 단일상 박막은 증착시에나 후열처리 시 산소의 억제가 중요함을 알 수 있었다. -
In this paper, we have investigated the electrical characteristics for solar-cell and wind power generator hybrid system. The output of electricity for solar cell - wind generator hybrid system were investigated according to the weather conditions at Naju province.
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Cadmium sulfide (CdS) thin film for flexible optical device applications were prepared at
$H_2(Ar+H_2)$ flow ratios on polyethersulfon(PES) flexible polymer substrates at room temperature by radio frequency magnetron sputtering technique. The CdS thin films deposited at room temperature showed a (002) preferred orientation and the smooth surface morphologies. Films deposited at a hydrogen flow ratio of 25% exhibited a photo- and dark-sheet resistance of about 50 and$2.7{\times}10^5{\Omega}$ /square, respectively. From the result of the bending test, CdS films exhibit a strong adhesion with the PES polymer substrates and the$Al_2O_3$ passivation layer deposited on the CdS films only shows an increase of the resistance of 8.4% after exposure for 120 h in air atmosphere. -
This paper describes the electrical and optical characteristics of
$N_2$ doped porous 3C-SiC films. Average pore diameter is about 30 nm and etched area was increased with$N_2$ doping rate. The mobility was dramatically decreased in porous 3C-SiC. The band gaps of polycrystalline 3C-SiC films and doped porous 3C-SiC were 2.5 eV and 2.7 eV, respectively. -
This study realized low-temperature crystallization process of the
$Ba_{0.6}Sr_{0.4}TiO_3$ (BST) thin films without thermal damage of substrate using excimer laser annealing (ELA) and structural and electrical characteristics were investigated. The amorphous BST thin films were prepared on Pt/Ti/$SiO_2$ /Si substrate by sol-gel method at$250^{\circ}C$ . The ELA was carried out using KrF excimer laser which provided excitation wavelength of 248 nm. The beam homogenizing system was used in order to homogenize beam shape of Gaussian fit. The XRD and SEM were used to analyze structural characteristics and the microwave capacitance, dielectric loss and tunability of the BST films were measured by a symmetrical stripline resonator method with shorted end. Consequently, the crystallinity of BST thin films were improved after ELA process and RF tunable capacitor was demonstrated at low temperature below$300^{\circ}C$ . -
Engineering plastics have excellent electrical properties, mechanical strength and various characteristic which include chemical resistance, environmental resistance, weatherability at a wide temperature range. It has good characteristic(light weight, good productivity) as compare with epoxy or porcelain insulators. However, engineering plastics not suited to outdoor insulator because it isn't hydrophobic. Therefore, to over come these critical problems, we improve the surface insulation characteristics of engineering plastic by coating micro-, nano- size inorganic fillers added to RTV-SIR(Room temperature vulcanized-silicone rubber) at this plastic surface. The effect is analyzed through salt-fog test, tracking test. In conclusion, the engineering plastic coated RTV with micro-
$Al_2O_3$ 20[phr], nano-Al(OH)3 1 ~ 3[phr] improved much better than the others. -
The Angle Ring and Cap which is called pressboard are settled at primary and secondary coil winding of 154 kV transformer that can reduce effectively distance of insulation. As it has not manufactured pressboard of Angle Ring and Cap for high voltage grade, insulation components industry especially high voltage transformer has not participate in a competition with worldwide yet. That's why is difficult to make an specialized shape of insulation components of high voltage grade. At first, it is very important to make an utility of deformation manufacturing for high voltage transformer insulation components by itself. Therefore it has finally completed to make an deformation manufacturing utility using an special analysis tools. In this paper, developed insulation components was investigates in tensile strength is introduced.
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The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [
$11\bar{2}0$ ] ($\alpha$ -GaN) or [$1\bar{1}00$ ] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the$\alpha$ -GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in$\alpha$ -GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar$\alpha$ -GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and$[\bar{1}100]_{GaN}$ axes) on the$\alpha$ -plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar$\alpha$ -GaN epilayers grown on ($1\bar{1}02$ ) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM). -
본 논문에서는 대전입자층과 충전비율에 따른 구동특성을 평가하였다. 소자 제작은 동일한 cell gap에 대전입자의 입자층과 충전비율을 다르게 하여 패널에 주입하였으며 문턱전압 및 구동전압에서의 구간에서 실제로 움직이는 대전입자의 구동입자 개수와 면적을 측정하였다. 그 결과 대전입자층 및 충전비율에 따라서 구동전압 및 구동입자수와 white, black의 차지하는 면적비율의 차이가 있었으며, 면적측정으로 contrast ratio를 평가하고 실제로 구동하는 입자의 비율을 확인하였다.
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Han, Hyun-Seok;Kim, Jung-Sik;Kim, Weon-Jong;Lee, Jong-Yong;So, Byung-Mun;Kim, Tae-Wan;Hong, Jin-Woong 33
Electrical properties of organic light-emitting diodes (OLEDs) were simulated by S.co's program. The OLEDs have stable operating parameters, high luminance, and high efficiency in simulation. The AF stands for amorphous fluoropolymer in simulation, and it was used as a hole-injection layer. In the five structure of OLEDs, an AF layer is sandwiched between the hole-transport layer and the ITO layer to increase the external quantum efficiency. By considering organic light-emitting diodes using an optimal energy gap of AF, it could contribute to the improvement of the efficiency of the device in the simulation. -
We report on the influence of heat treatments on the electrical properties of ZnO films grown by molecular-beam epitaxy. We note that the electrical resistance of the ZnO films is significantly changed by the heat treatments: the electrical resistance increases with the increase of ambient temperature, but above a critical temperature the resistance decreases with the increase of temperature, irrespective of ambient gases. On the other hand, it is found that the large amount of photocurrent is generated in the ZnO films, exposed to white sources: the photocurrent decreases with the increase of the obtained resistance, and the current increases with the decrease of the resistance. Also, it is shown that the X-ray diffraction linewidth of the ZnO films is significantly decreased by the heat treatments. These indicate that the increase/decrease of the electrical resistance is ascribed to the annihilation/formation of the residual donor-type defects in the ZnO films by the heat treatments. It is suggested that the increase of the electrical resistance is due to the annihilation of Zni-complex defects, while the decrease of the electrical resistance is due to the formation of VO-complex defects.
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대전입자형 디스플레이에서 화상을 표시하는 대전입자의 크기와 입자층은 구동뿐만 아니라 광학특성에도 큰 영향을 주며, 그 평가를 통해 향상된 특성을 가지는 입자의 제조 및 충전방법을 제안할 수 있다. 본 연구에서는 대전업자의 사이즈와 입자층의 변화에 따른 반사율을 평가하고 업자의 구동시 전극에서 차지하는 면적값을 현미경프로그램으로 측정하고 이들의 비교를 통해 반사율과의 상관관계를 분석하였다.
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Currently, there are several newly developed energy resources for the future to replace petroleum resources such as hydrogen fuel cell, solar cell, wind power, and etc. Among them, solar cell has attracted a worldwide concern, because it has an enormous amount of resources. In general, a study of solar cells can be classified in to an area of bulk type and thin-film type. Inorganic solar cells based on silicon have been tremendously developed in technology and efficiency. However, since there are many lithographic steps, high processing temperature approximately
$1000^{\circ}C$ , and expensive raw materials, a manufacturing cost of device are nearly reaching a limit. Contrary to those disadvantages, organic solar cells can be manufactured at room temperature. Also, it has many advantages such as a low cost, easy fabrication of thin film, and possible manufacture to a large size. Because it can be made to be flexible, research and development on solar cells are actively in progress for the next generation. ever though an efficiency of the organic solar cell is low compared to that of inorganic one, a continuous study is needed. In this paper, we report optimal device structure obtained by a program simulation for design and development of highly efficient organic photovoltaic cells. we have also compared simulated results to experimental ones. -
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계조표현의 방법인 기존의 펄스폭에 의한 방법과 본 연구에서 수행한 4채널의 계조표현 방법에 대해 비교하였다. 펄스폭에 의한 계조표현은 동일한 전압에서 펄스의 폭을 제어하여 계조표현이 가능하며, 4채널의 계조표현은 두 개의 채널로 전극배선을 하여 제작한 소자에 black입자와 white입자를 주입하고 생성된 4개의 서브픽셀의 컬러를 순차적으로 변하도록 하여 계조표현하는 방법이다. 두 가지의 계조표현은 이미지의 구현방법과 지속시간의 차이점이 있다. 4채널의 계조표현이 4개의 서브픽셀을 구동하면, 또 다른 계조표현은 8채널의 계조표현방법으로 이 방법은 하나의 큰 셀에 4개의 서브셀을 만들어 각각 다른 weight를 가지도록 만들어 우수한 계조표현을 구현할 것으로 판단되어 제안하고자 한다.
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The authors have an extensive study of photoluminescences for Zn-polar and O-polar faces of single-crystalline ZnO bulks. In the photoluminescence (PL) spectra at 10 K, Zn-polar and O-polar faces show a common emission feature: neutral donor-bound excitons and their longitudinal-optical (LO) phonon replicas are strong, and free excitons are very weak. However, in the PL spectra at room temperature (RT), Zn-polar and O-polar faces show extremely different emission characteristics: the emission intensity of Zn-polar face is 30 times larger than that of O-polar face, and the band edge of Zn-polar face is 33 meV red-shifted from that of O-polar face. The temperature dependence of photoluminescence indicates that the PL spectra at RT are closely associated with free excitons and their phonon-assisted annihilation processes. As a result, it is found that the RT PL spectra of Zn-polar face is dominated by the first-order LO phonon replica of A free excitons, while that of O-polar face is determined by A free excitons. This is ascribed that Zn-polar face has larger exciton-phonon coupling strength than O-polar face.
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Structural, electrical, and optical properties of atomic layer-controlled AI-doped ZnO (ZnO:Al) films grown on glass by atomic layer deposition (ALD) were characterized with various
$Al_2O_3$ film contents for use as transparent electrodes. Unlike films made using sputtering methods, the diffraction peak position of the films grown by ALD based on alternate self-limiting surface chemical reactions moved progressively to a wider angle (red shift) with increasing$Al_2O_3$ film content, which seems to be evidence of Zn substitution in the film by layer-by-layer growth. By adjusting the$Al_2O_3$ film content, the electrical resistivity of ZnO:Al film with the$Al_2O_3$ film content of 2.96% reached the lowest electrical resistivity of$9.80{\times}10^{-4}\Omega{\cdot}cm$ , in which the carrier mobility, carrier concentration, and optical transmittance were$11.20\;cm^2V^{-1}s^{-1}$ ,$5.69{\times}10^{20}\;cm^{-3}$ , and 94.23%, respectively. Moreover, the estimated figure of merit value for the transparent conductive oxide applications from our best sample was$7.7\;m{\Omega}^{-1}$ . -
In this research, to study tungsten carbide alloy(Co 0.5%) ultra precision turning possibility that is used Glass Molding Press(GMP) using conventional (Rake angle
$-25^{\circ}$ ) single crystal diamond bite observed machining surface condition, surface roughness($R_a$ ), diamond bite cutting edge after tungsten carbide alloy ultra precision turning. Suggested and designed optimum chamfer bite shape to suggest ultra precision optimum bite using Finite Element Analysis(FEM). After machining tungsten carbide alloy ultra precision turning using optimum chamfer bite and comparing with conventional bite machine result and studied optimum chamfer bite design inspection and also tungsten carbide ultra precision turning possibility for high temperature compression glass lens molding. -
Deep-trenched photonic crystals passing through InGaN/GaN quantum well structural layer have been fabricated on the surface of GaN-based light emitting diode(LED) using by electron beam nanolithography. The lattice constant and hole diameter of the photonic crystals are 230nm and 140nm, respectively. The structural and electro-optical properties have been investigated by scanning electron microscope(SEM) and power-current-voltage(L-I-V). Electroluminescence from GaN-based LED with deep-trenched photonic crystal shows the higher intensity than that without photonic crystal.
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HTS(High Temperature Superconductor) cable has a high possibility of practical use due to the possibility of low voltage and high capacity transmission caused by its lower power loss than copper cable. On the other hand, when fault current occurred, resistance increase caused by superconductivity loss, the amount of power supplies has diminished, furthermore, it's necessary to take the possible danger of damage to HITS cable into account. Therefore, an effective plan for dealing with the above problem is to link HITS cable to SFCL. In this study, we researched the possibilities of normal transport current as well as the safety of HITS cable by analyzing the properties of transport current in HITS cable connected with SFCL.
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Ha, Dong-Woo;Kwon, Jun-Mo;Ko, Rock-Kil;Baik, Seung-Kyu;Sohn, Myung-Hwan;Lee, Yu-Jin;Kim, Tae-Hyung 44
Conventional water treatment facilities like precipitation process need large-scale equipment and wide space to purify the wastewater of paper factory. In case of massive waste water, high gradient magnetic separation (HGMS) parts are more effective to purify it rapidly and to occupy relatively small space, since large voids at filter with HGMS are adopted. Cryo-cooled Nb-Ti superconducting magnet with room temperature bore in diameter of 100 mm and 600 mm in height was used for magnetic separator. Magnetic filters were designed by the analysis of magnetic field distribution at superconducting magnets. -
This paper discusses the simulation and LI(light impulse) test of the shieldless vacuum interrupter concept. The shields of vacuum interrupter play an important role in absorbing the metal vapor. But shield distort the electric field distribution of inner vacuum interrupter. Therefore, the insulation efficiency will improve. if shield of vacuum interrupter inside does not exist. As a result, FEM simulation show that improve distribution of electrical field and equi-potential line. But LI test result dissimilar to FEM simulation result. Shieldless vacuum interrupter model lower BIL(breakdown impulse light) than vacuum interrupter have installed shield. Because conditioning process occurred metal vapor. This paper compared that FEM analysis and LI test of installed shield model and shieldless model.
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In this paper, we studied the volume resistivity and the electrical conductivity properties of nano composites to investigate the electrical properties of epoxy composites added nano MgO. The specimens were produced by classifying to 1.0, 3.0, 5.0, 10[wt%] and virgin specimen according to the addition amount of MgO. We measured the volume resistivity of nano filler using the High Resistance Meter(4329A) at the measuring temperature changed to 25, 50, 80, 100, and [
$120^{\circ}C$ ]. As the result, it is confirmed that the volume resistivity was the highest stability and volume resistivity value is$2.6{\times}10^{17}\;[\Omega{\cdot}cm]$ at 3.0[wt%]. And it is confirmed that the electrical conductivity property is sharply increased at low electric filed region and the conductivity current density is rapidly increased at high electric filed region. -
배전계통의 사고예방 기술은 전력수요 및 증설이 증가하고 있는 상황에서 시급히 확립되어야 한다. 특히 현장에서 시공되는 케이블은 시공과정의 관리가 쉽지 않을 뿐 아니라, 시공 중 발생될 수 있는 결함들을 검출하는 방법도 제한되어 있다. 본 연구에서는 국내에 도입된 진단방법을 통계적 방법으로 분석하고 효과적으로 점검할 수 있는 방법에 관한 검토하고자 한다.
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In this paper, we have investigated temperature dependence of dielectric breakdown voltage at epoxy with added nano-filler(MgO), which is used as a filler of epoxy additives for HVDC(high voltage direct current) submarine cable insulating material with high thermal conductivity and restraining tree to improve electrical properties of epoxy resin in high temperature region. In order to find dispersion of the specimen, the cross sectional area of nano-composite material is observed by using the SEM(Scanning Electron Microscope) and it is conformed that each specimen is evenly distributed without the cohesion. As a result, it is confirmed that the strength of breakdown of all specimen at 50 [
$^{\circ}C$ ] decreased more than that of the dielectric breakdown strength at room temperature. When temperature increases from 50 [$^{\circ}C$ ] to 100 [$^{\circ}C$ ], we have confirmed that breakdown strength of virgin specimen decreases, but specimens with added MgO show constant dielectric breakdown strength. -
In this paper, a full scaled gas discharge chamber was designed and fabricated for evaluating the dielectric performance of SF6/N2 mixture gases. And it describes work on AC and lightning impulse dielectric characteristics of SF6/N2 mixture insulation gas from experiments and full scale models.
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전력케이블의 수명예측은 전력설비의 적절한 전력설비의 신뢰성 확보에 목적이 있다. 그러나 장기간의 수명으로 설계되는 관계로 가속실험을 수행하여 중장기적인 절연성 추세를 평가하기 위해서 와이블 분포함수와 같은 통계적인 접근과 수영과 관련된 보상조건에 대한 고려가 필수적이다.
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We have proposed a new configuration for the improvement of neutron yield without the application of external ion sources in an inertial electrostatic confinement (IEC) device. The application of a double grid cathode to the IEC device is expected to generate a higher ion current than a single grid cathode. This paper verifies the effect of the double grid cathode by both fluid and particle simulation. Through the fluid simulation the optimal shape and applied voltage of the double grid cathode is determined, and through the particle simulation the usefulness of that is confirmed.
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상변화 재료로 가장 널리 이용되고 있는
$Ge^2Sb^2Te^5$ 박막에 전기전도성이 높은 Au를 첨가하여 상변환 특성을 연구하였다. ($Au)_x(Ge^2Sb^2Te^5)_{1-x}$ (X = 0, 0.05, 0.1) 박막은 Si 와 Glass 위에 Au 타켓과$Ge^2Sb^2Te^5$ 타겟을 Co Sputtering 하여 만들었다. 증착된 박막은 Nanopulse Scanner 를 사용하여 결정화 속도를 측정하였다. 또한$100^{\circ}C{\sim}400^{\circ}C$ 까지$25^{\circ}C$ 간격으로 열처리 후 4 point prove를 이용하여 열처리 온도에 따른 저항의 차이를 측정하였으며 비정질 - 결정질 천이의 구조를 확인하기 위하여 XRD를 측정하였다. UV-VIS/IR 장비를 사용하여 비정질 박막과 결정화된 박막의 물성과 전기적 특성을 분석하였다. -
The development of synthetic pathway to produce a highly yield nanoparticles is an important aspect of industrial technology. Herein, we report a simple, rapid approach to synthesize organic-soluble Cu and Ag nanoparticles in colloidal method for the application in a conductive pattern using inkjet printing. The silver nanoparticles have been synthesized in highly concentrated organic phase. The Cu nanoparticles have been synthesized by the reducing of the copper oxide materials using acid molecules in high concentrated organic phase. Their sintering and electric conductivity properties were investigated by melting process between
$200^{\circ}C$ and$250^{\circ}C$ for application to printed electronics. -
This article reports a spontaneous method for controlling the growth mode from vertically arrayed ultra-slim MgZnO nanowires to nanowalls through the Zn random motion of seeds formed by surface phase separation by Mg injection near an evaporation temperature of Zn. The random motion of single crystal MgZnO seeds with relative Zn rich phase played a vital role in the growth of the MgZnO nanowalls. The seeds were networked with increasing Zn flux compared with Mg flux and closing to the evaporation temperature of Zn on phase separation layers. We achieved fabrication of MgZnO nanowalls on various non- and conducting substrates by this advanced growth method. The MgZnO nanowalls hydrogen sensor showed an improved sensing performance compared to the MgZnO nanowires grown under the similar conditions. Based on the microstructural characterizations, the growth procedure and models for the evolution of the structure transition from MgZnO nanowires to nanowalls on the Si substrates are proposed for phased growth times.
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상변화 메모리용 셀은 전류 구동형으로써 셀에 전류를 인가하였을 때 저항이 높은 상태(비정질상)과 저항이 낮은 상태(결정질상)의 두가지 특성을 갖는다. 저항이 높은 상태에서 전류나 전압을 인가하면 높은 저항을 보이다가 일정 값(threshold voltage) 이상에서 낮은 저항을 갖는 현상을 보인다. 이때 상변화물질의 종류 혹은 셀의 사이즈에 따라 threshold voltage의 차이가 나타나는데 이 값을 줄임으로서 상변화 메모리의 구동 전류의 감소에 기여할 수 있다. 본 연구에서는 스퍼터링 방법을 이용해 박막형식의 셀을 제작하여 전기적 특성을 관찰하였다. 셀은 Si 기판 위에 radio frequency power supply 와 direct current power supply를 사용해 하부전극과 상변화층, 그리고 상부전극의 순으로 증착하여 제작하였다. 상변화층은
$Ge_2Sb_2Te_5$ 를 사용하였고 제작된 셀은 scanning electon microscope(SEM)를 이용하여 표면의 상태를 확인하였고 Keithley 4200scs를 이용하여 인가된 전류 혹은 전압에 따른 특성변화를 측정하였다. -
Single-walled carbon nanotubes (SWCNTs) have attracted much attention as a promising material for transparent conducting films (TCFs), due to their superior electrical conductivity, high mechanical strength, and complete flexibility as well as their one-dimensional morphological features of extremely high length-to-diameter ratios. This study investigated three kinds of SWCNTs with different purities: as-produced SWCNTs (AP-SWCNTs), thermally purified SWCNTs (TH-SWCNTs), thermally and acid purified SWCNTs (TA-SWCNTs). The purity of each SWCNT sample was assessed by considering absorption peaks in the semiconducting (
$S_{22}$ ) and metallic ($M_{11}$ ) tubes with UV-Vis NIR spectroscopy and a metal content with thermogravimetric analysis (TGA). The purity increased as proceeding the purification stages from the AP-SWCNTs through the thermal purification to the acid purification. The samples containing different contents of SWCNTs were dispersed in water using sodium dodecyl benzensulfate (SDBS). Aqueous suspensions of different purities of SWCNTs were prepared to have similar absorbances in UV-Vis absorption measurements so that one can make the TCFs possess similar optical transmittances irrespective of the SWCNT purity. Transparent conductive SWCNT networks were formed by spraying an SWCNT suspension onto a poly(ethyleneterephthalate) (PET) substrate. As expected, the TCFs fabricated with AP-SWCNTs showed very high sheet resistances. Interestingly, the TH-SWCNTs gave lower sheet resistances to the TFCs than the TA-SWCNTs although the latter was of higher purity in the SWCNT content than the former. The TA-SWCNTs would be shortened in length and be more bundled by the acid purification, relative to the TH-SWCNTs. For both purified (TH, TA) samples, the subsequent nitric acid ($HNO_3$ ) treatment greatly lowered the sheet resistances of the TCFs, but almost eliminated the difference of sheet resistances between them. This seems to be because the electrical conductivity increased not only due to further removal of surfactants but also due to p-type doping upon the acid treatment. The doping effect was likely to overwhelm the effect of surfactant removal. Although the nitric acid treatment resulted in the similar. electrical properties to the two samples, the TCFs of TH-SWCNTs showed much lower sheet resistances than those of the TA-SWCNTs prior to the acid treatment. -
In this study, nano-sized phase change materials were evaluated using nanoimprint lithography and c-AFM technique. The 200nm in diameter phase change nano-pillar device of GeSbTe, AgInSbTe, InSe, GeTe, GeSb were successfully fabricated using nanoimprint lithography. And the electrical properties of the phase change nano-pillar device were evaluated using c-AFM with pulse generator and voltage source.
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Shin, Min-Gi;Park, Hyun-Tea;Jang, Sang-Hun;Koh, Hye-Jin;Jang, Jae-Wan;Kim, Yun-Hi;Kwon, Soon-Ki 58
We designed and synthesized DFPCE blue emitting materials by Mc Murry coupling reaction in order to improve the device efficiency and stability. The structure was confirmed by$^1H$ -NMR. The physical properties were characterized by differential scanning calorimetry, thermogravimetric analysis, UV-vis, photoluminescence spectrum and cyclic voltammetry. The decomposition temperature of the material, which correspond to a 5% weight loss upon heating, is$513.58^{\circ}C$ . The photoluminescence (PL) spectrum of DFPCE exhibited blue emission at 425 nm in chloroform solution and 462 nm in film. -
상변화 메모리 소자의 고집적화를 위한 새로운 패터닝 공정을 위하여 블락 공중합체의 자가 조립 특성을 적용한 고분자 패턴을 TiN기판 위에 적용화기 위한 연구를 진행하였다. 블락 공중합체의 자기 조립에 의한 패턴의 모양은 각 기판과 블락 공중합체간의 상호작용에 따라 sphere, cylinder, lamellar 형태의 모양을 띄게 된다. 표면처리가 안된 TiN기판 위의 PS-b-PMMA 블락 공중합체의 패턴의 형태는 cylinder와 lamellar 구조가 섞여 있는 구조로써 PS-r-PMMA 랜덤 공중합체로 기판 표면을 처리해 줄 경우 좀 더 균일한 cylinder 패턴 구조를 얻을 수 있었다. PS-r-PMMA로 기판 표면 처리 전 후의 상호 작용의 변화를 알아보기 위하여 물방울 접촉각 테스트를 하였으며 랜덤 공중합체와 블락 공중합체의 표면 처리 열처리 조건에 따른 패턴 행태의 변화를 관찰하기 위하여 모두 24,48,72시간으로 변화시켜 열처리 하였다. 최종 열처리 후 블락 공중합체의 패턴 형태의 주사 전자 현미경 관찰을 위하여 acetic acid에 60분 동안 침지시켜 PMMA를 제거 후 괄찰하였다.
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1-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Bismuth oxide(
$Bi_2O_3$ ) is an important p-type semiconductor with main crystallographic polymorphs denoted by$\alpha-$ ,$\beta-$ ,$\gamma-$ , and$\delta-Bi_2O_3$ [1]. Due to its unique optical and electrical properties,$Bi_2O_3$ has been extensively investigated for various applications in gas sensors, photovoltaic cells, fuel cells, supercapacitors[2-4]. In this study,$Bi_2O_3$ NWs were grown by two step annealing process: in the first step, after annealing at$270^{\circ}C$ for 10h in a vaccum($3{\times}10^{-6}$ torr), we can obtain the bismuth nanowires. In the second step, after annealing at$300^{\circ}C$ for 2h in$O_2$ ambient, we successfully fabicated$Bi_2O_3$ nanowires. -
니켈 니켈 와이어를 증류수 및 에탄올 등의 유기용매 중에서 펄스파워 기술을 이용하여 전기적으로 폭발 시켰다. 폭발에 의하여 생성된 입자들은 직경이 수 마이크로미터 에서 수 십 나노미터에 이르는 넓은 입도분포를 보였다. 본 연구에서는 원심분리기술을 이용하여 입자의 크기별로 분리 회수가 가능함을 증명하였다. 또한 유기용매 중에서 제조된 니켈분말에 탄소가 포함되어 있으며, 열처리를 통하여 제거가 가능함을 실험을 통하여 밝혔다.
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Photonic quasi-crystals(PQCs) have been fabricated by a multiple-exposure nanosphere lithography (MENSL) method using the self-assembled nanospheres as lens-mask patterns. The multiple-exposing source is collimated laser beam and rotation, tilting system. The arrays of the PQCs exhibited variable lattice structures and shape the control of ratating angle (
$\theta$ ), tilting angle ($\gamma$ ) and the exposure conditions. The used nanosphere size is upto the$1\;{\mu}m$ . Images of prepared 2D PQCs were observed by SEM. We believe that the MENSL method is a suitable useful tool to realize the PQCs arrays of large area. -
나노 구조를 제작은 나노 기술을 기반으로 하는 electronics, optoelectronics, sensing, ultra display등의 여러 분야에서 이용되고 있다. 특히 나노 구조를 갖는 금속 패터닝의 경우 전자빔 리소 그래피 (electron beam lithography)나 레이저 패터닝(laser patterning)과 같은 방법들이 많이 사용되고 있다. 하지만 공정이 복잡하고 그로 인해 공정 비용이 많이 든다는 단점이 있었다. 나노 임프린트 리소그래피 기술은 master mold 표면의 나노 패턴을 가열, 가압 공정을 통해 기판 위의 고분자 레지스트 층으로 전사하는 기술이다. 이 기술은 간단한 공정을 통해 나노 패턴을 형성할 수 있는 기술이기 때용에 차세대 나노 패터닝 기술로써 각광받고 있다. 특히 이 기술은 레지스트 층과의 직접적인 접촉을 통해 나노 패턴을 형성하기 때문에 다양한 방법을 통해 기능성 나노 패턴을 직접적으로 형성할 수 있는 가능성을 지니고 있다. 본 연구는 novel meta1의 하나인 Ag 입자가 첨가된 ink solution를 master mold로부터 복제한 PDMS mold를 이용하여 다양한 구조의 나노 패턴을 만드는 방법에 대한 연구이다.
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This paper presents the results of changes of optical properties of front materials in crystalline PV modules. If PV modules on the outdoor, transmittance of front materials is reduced by solar light. That is UV, IR included Solar spectrum will have change the properties of glass. Therefore decrease in transmittance leads to loss of the PV modules output. All the PV modules showed the loss in Isc by 1~5% within few hors. To investigate the changes we are analyzed using spectrophotometer from raw glass to laminated glass.
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본 논문은 이 중 직렬저항에서 한 부분을 차지하고 있는 전극부분과 리본부분의 접촉저항이 단순히 접촉 면적만이 아닌 위치에 따라서 다른 값을 지닌다는 전제에 연구를 하였다. 값이 작은 접촉저항의 명확히 눈에 보이는 결과를 위해서 접촉저항이 무한대가 되었을 때, 즉 전극과 리본이 박리가 된 상태를 기준으로 실험을 하였고, 그 이유를 증명하기위해 태양전지를 세부분으로 나누어 전류발생량을 측정하였고, 전극을 세부분으로 나눈 뒤 I-V curve를 측정하였다.
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잉크젯용 저온 Cu ink의 소성 특성을 향상 시키기 위해 소성 분위기롤 조절 하였다. 일반적으로 Cu는 산화가 잘되는 물질로 환원 분위기에서 소성이 이루어져야만 하기 때문에 acid, alcohol, aldehyde, ether와 같은 환원제를 소성시 사용하였다. 또한 1종의 환원제가 아닌 2종의 환원제롤 일정 비율로 섞음으로써 환원력를 조절하여 소성 품질을 향상 시킬 수 있었으며, 이러한 환원 분위기 조절을 통하여 300도 이하 저온에서 소성이 가능하였다. 또한 optical microscopy와 field emission scanning electron microscopy를 통해 막 품질과 미세조직의 치밀도를 확인하였고 배선 재료로써의 적용을 위해 resistance를 측정 비교하였다.
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PV module has many power loss factor in the site. Among them, one thing is series resistance. Especially interconnection ribbon resistance is one of the power loss. In this paper, we study interconnection ribbon resistance of the PV module material. In the field, high temperature can pile ribbon resistance on the PV modules. We can do better choice in the optimum use of ribbon through checking relation of ribbon dimension and resistivity. From this point of view, different solder type and dimension was treated.
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To reduce PV manufacturing costs, the thickness of solar cell is getting thinner. Bow is shown after cooling down the temperature of solder cell. It happens because of different thermal expansion coefficients of different metals. Bowed cell can make micro crack while module processing and it can drop off efficiency of PV module. As thinner solar cell is produced, the thickness of ribbon should be concerned to prevent extra bow. In this paper we investigate the contrast of deflection when we solder different thickness of ribbons on same solar cell. This approach would help to find out the optical thickness of ribbon for particular thickness of solar cell later on.
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Carbon nano tubes (CNTs) have been attractive candidates for fundamental research studies due to their outstanding physical and chemical properties. High thermal and chemical stability and large surface area make CNTs an ideal platform for many nano materials systems. Several applications such as Several applications were proposed for CNTs many of which are concerned with conductive or high strength composites make them excellent candidates for a variety of energy conversion and storage technologies.
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Until recently. the study about bypass diode has been limited to theoretical study. but, in this paper, We study on the relationship between structure of PV module and Bypassing point by simulation software(Pspice). We expected the design on the PV module has an effect on bypassing point. So, we designated the two kind of experiment with PV modules. One of the experiment is on the relationship between the number of rows and Bypassing point on the PV modules, the other experiment is on the relationship between the number of groups(two columns) on the PV modules.(around 50Wp, 100Wp, 150Wp, 200WP) As the result, the more increase the number of rows, bypassing point is faster. And the more increase the number of groups in more than 3 groups, bypassing point is faster more than case of increasing the rows.
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The PV module company use variable process step and type. Especially soldering process is important, because crystalline cell can be bow by beating temperature. Most PV module company use hot air soldering type in the tabbing & string process. Although hot air type is used widely but this type is bound to influence on cell damage. So recently new way is introducing like a high current way. In this paper, we compare with characteristics of each soldering type and then conform a method to minimize solar cell deformation. Actually solar cell deformation show many difference by fix position and cooling time after soldering step.
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Yang, Jong-Seok;Choi, Eun-Ho;Lee, Si-Eun;Bae, Hye-Yeon;Jeon, Geun-Bae;Seong, Baeng-Nyong;Park, Dong-Ha 75
기존 할로겐프리 제품은 PVC와 비교하여 유연성이 크게 떨어져 PVC 사용에 대한 규제가 강화되고 있음에도 불구하고, 이를 쉽게 대체하기 곤란하다는 문제점이 있다. 이에 할로겐프리 재료만 사용하여 고난연성, 예를 들면 UL 1581 에 따른 VW-1 규정을 충족하는 고난연성을 가지면서도 경도가 낮아(경도 70수준, Shore A) 재질의 유연성이 확보된 고분자 재료를 개발하는 것이 요구된다. 실험 결과로부터 인장강도 11[Mpa], 신장율 720[%], 가열후 인장강도 잔율 90[%], 가열후 신장잔율 88[%], 산소지수 38.0, 수직난연시험 합격, 경도(Shore A) 70, 백화현상이 나타나지 않는 등 우수한 특성을 보였다. -
유기박막트랜지스터의 특성을 개선하기 위해서는 유기반도체와의 좋은 접합과 유전상수가 주요한 요인으로 작용한다. 무기 산화물 전구체와 유기고분자를 이용하여 유기 고분자의 단정인 낮은 유전율을 개선하였다. 스핀코팅 방법이 아닌 딥코팅 방법을 이용하여 절연막 두께를 10nm정도로 낮추어 구동전압을 개선하였으며 무기 절연체의 높은 누설전류 또한 그 특성이 개선되어 우수한 절연 특성을 보였다. 유-무기 복합체를 이용한 게이트 절연막과 펜타센을 이용한 유기박막트랜지스터의 구동전압은 1V정도에서 구동가능하며, 점멸비, 이동도 모두 개선된 결과를 보였다.
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Oh, Yong-Cheul;Jeong, Han-Seok;Lee, Jae-Bong;Yim, Joo-Hyuck;Son, Ki-Jung;Kim, Jin-Sa;Kim, Chung-Hyeok 77
We used eddy current sensor for diagnosis of power line. The power line according to the cross section has 6~18 element wires. The corrosion of power line was made by sodium hydroxide. The corrosion time of power line was from 18 hours to 27 hours. We obtained physical characteristics from tensile and torsion tests of power line. The eddy current Characteristics of power line according to the corrosion appeared change of amplitude 200 ~ 800 mV. -
Fiber Reinforced Plastic (FRP) insulator has a higher performance than porcelain. It is only used in domestic AC 25 kV electric railway system. Seoul Metro has developed DC 1500 V polymer insulator since 2008. The test of moisture infiltration is carried out. The test results showed that all result values satisfy the test standard.
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In this paper, we present results of the dielectric breakdown test in various 6.9kV power cables used in power plants. The dielectric strength of the different conditioned cables was measured by placing the sliced cable sections in silicone oil bath with needle electrode. The results were analyzed by the Weibull distribution. The shape and scale parameters of the Weibull distribution for each cable sections under test were calculated and evaluated. Collected data base was applied to deterioration trend analysis and lifetime guide was also proposed.
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본 논문에서는 현재 사용되는 변압기의 절연유인 광유와 새롭게 대두되고 있는 식물유의 신유 상태일 때, 온도와 유동대전방지제(Benzotriazole)에 따른 대전경향을 비교, 분석함으로써 변화되는 조건이 절연유에 미치는 영향에 관해 연구하였다. 유동대전현상을 해석하기 용이한 직렬식 대전장치를 설계, 제작하여 실험한 결과 온도의 변화에서는 광유, 식물유 모두 60[
$^{\circ}C$ ] 부근에서 최대치를 발생하였고 유동대전방지제의 첨가에 따라 유동대전은 광유, 식물유 모두 비슷한 경향으로 변화하였다. -
This paper presents results of experimental investigations on natural ester regarding the breakdown strength. Aging of insulating material in a pole transformer has been studied by performing accelerated thermal aging test. Sealed aging test vessels containing copper, laminated core, Krapt paper and insulating oil(Natural oil and Mineral oil) were aged at
$140^{\circ}C$ for 30days. Compared to the conventional transformer oil, electric property of the natural ester fluid is excellent. -
에폭시메트릭스 내에서 초음파 및 균질기를 이용하여 층상실리케이트 마이크로 입자의 균질분산을 위하여 사용하였다. 초음파와 균질기를 동시에 사용하여 최적의 적용시간과 충진나노입자 충진함량과의 관계를 연구하기위하여 구조적 특성으로 X-RD, 열적특성으로 DSC, 열적 기계적 특성으로 DMA를 사용하여 특성을 평가하였다. 충진함량 변화에 대해서 층상실리케이트의 층간사이 간격의 변화는 반비례하는 특성을 나타내었고, 충진함량이 증가됨에따라 자체만으로는 크게 응집된 입자의 분산이 미약한 결과로 볼 수 있다. 그러나 Homogenizer와 동시에 분산할 때는 충진함량이 크게 증가하여도 균질한 분산이 이루어졌다.
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This study investigates the thermal and mechanical properties of insulation elements through mixing epoxy based micro- and nano particles. Regarding thermal properties, DSC and DMA were used to calculate crosslinking densities for various types of insulation elements. In a mechanical property of bending strength, shape and scale parameters were obtained using the Weibull plot. This study obtained the most excellent results of scale parameters, such as Vol 3.2%, in the bending strength of EMNCs.
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Nano particles (10nm SiO2) were silane-treated in order to modify the surface characteristics in a epoxy nanocomposite. Then. micro particles (
$3{\mu}m$ SiO2) were poured into the epoxy nanocomposite using various mixing process and epoxy/ micro-and-nano- mixed composites (EMNC) were prepared. The thermal (Tg) and mechanical (tensile and flexural strength) properties were measured by DMA and UTM and the data was estimated by Weibull plot. -
In this paper, each specimen blended at weight proportions of 80% HDPE to 20% EVA, 70% HDPE to 30% EVA, 60% HDPE to 40% EVA, and 50% HDPE to 50% EVA was manufactued respectively. FE-SEM, DSC and XRD analysis were carried out as the means of structural and chemical analysis. From the results of DSC and XRD analysis, the lower contents in blended specimens were, the higher melting temperature and crystallinity of main crystal were. It seems that the phenomena was attributes to themoplastic interpenetrating network effect(TPIPN) in which EVA having low melting point penetrated into HDPE. Also, from the decreasing tendeancy of melting point as a function of blend ration, it was confirmd that above resins have compatibility. The thermal and mechanical performance of proposed insulator were compared with conventional XLPE, main insulating material of CV cable. Also, validity was proved by superior and inferior factor respectively.
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Recently, CV, CNCV, CNCV-W cable are used to transmit and distribute electric power. And a lot of researchers put more effort to realize high performance. The dielectric breakdown strength characteristic is a standard to design insulators. Examination of that is a main factor to determine long term insulation performance, which is used to diagnose Insulation deterioration. In this paper, we prepared XLPE, XLPE/nano-filler, LDPE/nano-filler for comparing each of the dielectric breakdown strength characteristics.
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Epoxy/mica has been used as the material of high-voltage rotator stator winding due to its high insulation performance, mechanical strength, and thermal stability. In recent years, however, it shows frequent changes in the load of generators and frequent automatic stops due to the significant increase in peak loads from the increase in the applied load of power facilities according to the introduction of advanced and high-technology equipments. Thus, it is necessary to develop new materials that highly develop the conventional insulation materials. Nanotechnology introduced in the present time has become an alternative plan that overcomes such technical limitations. In addition, the nano-scaled intercalation composite has been known as the material that represent excellent electrical, mechanical, and thermal characteristics compared to the conventional materials. This study investigated the dielectric dispersion and relaxation characteristics of the nanocomposite, which was fabricated by mixing epoxy matrix with nano-scaled intercalation mica and clay, according to changes in frequencies and temperatures.
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High Voltage cross-linked polyethylene (XLPE) cables are widely used in a thermal power plant. These cables had been in service for 26 years. The insulation condition of six 6 kV XLPE cables was estimated by insulation diagnostic analyzer (IDA) with voltage amplifier. IDA was measured dissipation factor and capacitance of the whole cable as a function of frequency and voltage. This system measures in the frequency range from 0.1 to 10 Hz at each voltage level. Six XLPE cables are judged good condition, but three cables are analyzed at an aged condition.
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발전기 회전자 권선 층간절연지는 대부분 글라스-에폭시(Glass-Epoxy) 및 페놀수지 제품이 사용되고 있다. 이 층간절연지는 과도하게 열적, 기계적 응력을 받게 됨으로 높은 기계적 특성이 요구된다. 실제 장기간 사용된 층간절연지에 대해 기계적 인장특성을 분석하였으며 시험결과 운전년수와 기계적 특성 저하와는 뚜렷한 상관관계가 없는 것으로 판단되었다.
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Cycloaliphatic Epoxy와 Bisphenol Epoxy를 각각 mol-wt%비 (80:20, 50:50, 20:80)로 혼합하고 Epoxy Silaned Silica, 바ed Silica, Spherical Silica, ATH(Aluminum Trihydrate)를 충진하여 내트래킹 특성 및 인장강도, 충격강도 등의 기계적 강도를 비교하였다. Cycloaliphatic 수지는 Huntsman사(社)의 CY5622, Bisphenol 수지는 Hexion사(社)E의 Epikote2200을 사용하였으며, Silaned Silica 및 Fused Silica는 Quatzwerke사(社)의 W12, FW12를 사용하였다. 전체 혼합물 중, 에폭시는 약 36%, 실리카는 약 34~540%, ATH는 약 10~30% 이다. 실험결과, ATH 함량이 높은 조성 및 Epoxy Silaned Silica를 사용한 조성과 Cycloaliphatic 혼합비율이 높은 조성이 우수한 내트래킹 특성을 보였다. 또한, Silica의 함량이 증가할수록 기계적 강도가 증가하였으며, Silaned Silica를 사용하였을 때 가장 우수한 특성을 나타내었다. 본 실험의 결과를 통해 옥외용 내트래킹 특성 규격인 IEC60587 4.5kV/6h를 만족하는 조성에 대해 가늠이 가능하였고, 각 조성에 따른 기계적 강도의 확인이 가능하였다.
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Lee, Dong-Gun;Back, Sung-Hak;Park, Tae-Hak;Park, Hong-Kyu;Jeong, In-Bum;Kim, Joung-Sik;Hong, Jin-Ung 91
In this paper, nano composites material is produced by adding MgO with particle size of 5 [nm] into epoxy resign using as insulating material of power transformer apparatus and molding part to study the volume resistivity of nano composites used epoxy. We measured the volume resistivity using the High Resistance Meter(4329A) depending on changing the amount of addition and temperature in this experience. In result, we have confirmed that 1.0, 3.0, 5.0 and 10.0 [wt%] as about 2.9, 7.6, 7.5 and 6.1 times increased than virgin. Therefore, the characteristic of volume resistivity was relatively stable as specimen by added 3.0 [wt%] than the others. -
In this paper, the test is performed on MgO, which is used as a filler in epoxy additives, respectively (0, 1.0, 3.0, 5.0, 7.0, 10 [wt%]) for HVDC(high voltage direct current) submarine cable insulating material to improve electrical properties of epoxy resin in high temperature. The breakdown strength due to increasing amount of filler increased to 5.0 [wt%] by the effects of the Coulomb blockade. However, it is confirmed that strength of dielectric breakdown decreased because the filler functioned as impurities and affected the breakdown when filler additive exceeded by 5.0 [wt%] or more. We have found that the highest dielectric breakdown strength of specimen added 5.0 wt% at
$25^{\circ}C$ , and is more increased approximately 13.7 [%] than virgin specimen. -
We developed friction welded bimetallic sleeve for 220kV aluminum conductor XLPE cable. Not only friction welded bimetallic sleeve for Termination(EB-A, EB-G) but also friction welded sleeve for Joint of Al to Cu conductor was developed regardless of this project. Generally, friction welded sleeve used to connect Al conductor cable to Cu conductor cable and used for improvement of mechanical property of terminal by offer the copper side of friction welded bimetallic sleeve at the Termination. Connection method for Al-Cu conductor has mainly used friction welding at the solid state, because it is difficult to connect by using conventional welding method. this investigation introduces development of friction welded bimetallic sleeve by friction welding and test result of 220kV Al conductor XLPE cable and accessories using friction welded sleeve.
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The result was estimated on the fractal characteristics as possibilities of identification of manufacture state for long period stabilities. At the second, the dangerous area was easily found to the recurrent phenomena of FD output. However, such area is very difficult to analysis of mechanism and to predict the lifetime in present state, it is possible to discriminate by means of data accumulation.
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Because of the environmental matters the importance of the city railroad is as time goes by increasing. The case of obstacle of the power equipment which supplies electric power to city railroad will occur social and economical enormous loss. Thus, I studied on the preventing method in advance which makes it possible for us to maintain facilities efficiently. The main check points of the power facilities are voltage, current, humidity, partial discharge, move current. These points are gathered by sensor and transmitting to data acquisition device. These data are used to check equipment status in real time. In this paper I described in brief test process and results of the detection system.
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HID램프의 한 종류인 세라믹 메탈할라이드 램프는 높은 광효율과 뛰어난 연색성으로 인해 가로등, 보안등이나 대형 산업체의 공장 내부 조명용 등 다앙한 분야에 폭넓게 사용되고 있다. 이렇게 사용범위가 확대됨에 따라 램프의 신뢰성 또한 중요한 요소로 여겨지게 됨으로 본 논문에서는 세라믹 메탈할라이드 램프의 열화특성 중 일부분인 흑화현상을 알아보기 위해 램프를 신뢰성기문 'RSC 0085'에 기초하여 5000시간의 열화 테스트 후 흑화현상 및 냉점부 온도변화를 분석하였고 이로 인한 광속저하를 확인하였다. 실험 후 플라즈마 대류에 의한 냉점 부 온도 변화의 차이로 인해 광속은 구형의 경우 약 9.3[%]가 감소한데 반해 원통형의 경우 29.4[%]의 감소를 확인하였다.
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A new electric application method was developed to prepare epoxy/organoclay nanocomposite for the electrical insulation in the AC electric fields and it could be also used in the field of various viscous polymer/organoclay systems. The applied AC electric field condition was as follows; (1) inter-electrode distance: 40 mm, (2) application voltage: 3-11 kV, (3) frequency: 60~1,000 Hz, and (4) application time: 0~60 min. To characterize the epoxy/clay nanocomposite, WAXS and TEM analyses were confirmed. In order to explain how the organic modifier affects the exfoliation phenomena, a mechanism of the oscillating collision of the quaternary ammonium head was proposed and the effects of the AC voltage and frequency and the organoclay content were studied.
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A epoxy/multilayered silicate nanocomposite was prepared by a new AC electric application method and micro silica particle was poured into the nanocomposite in order to prepare epoxy/micro-and-nano- mixed composites (EMNC). Electric insulation breakdown strength was measured in a sphere-sphere electrode system designed for the prevention of edge breakdown and the data were estimated by Weibull plot. As the exfoliated silicate nano-plates were homogeniously dispersed in the micro silica particles, the insulation property was higher.
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Polymer nanocomposite has been attracting much attention as a new insulation material, since homogeneous dispersion of nm-sized inorganic fillers can improve various properties significantly. In this paper, various kinds of epoxy based nanocomposites were made and AC breakdown strength of Nano-TiO2 and micro-silica filler mixture of epoxy based composites were studied by sphere to sphere electrode. Moreover, nano- and micro-filler combinations were adopted as an approach toward practical application of nanocomposite insulation materials. Nano-TiO2 particle size is about 10nm and composites ratio was resin (100) : hardener (82) : accelerator (1.5). AC breakdown test was performed at room temperature (25 [
$^{\circ}C$ ], 80 [$^{\circ}C$ ] and 100 [$^{\circ}C$ ] in the vicinity of Tg (90[$^{\circ}C$ ]). And thermal conductivity were measured by ASTM-D5470. -
Because of power consumption increase, global wanning, and limitation of installation, not only high reliability and interruption capability but also compact and light power apparatuses are needed. To improve the insulation performance, the high E field concentration phenomena was considered. Breakdown mechanism in vacuum is different from that in other insulation materials. therefore, It is necessary to understand the electric field distribution and insulation characteristics. This paper discusses the simulation and LI(light impulse) test of the shield of outside vacuum interrupter As a result, FEM simulation and LI test show that improve distribution of electrical field and equi-potential line. due to external shield. in this case, outside shield induced electric field of triple junction point.
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Power distribution system requires the transformer with higher capacity than ever, but this ever, but this may be the cause of the increasing of short circuit current in contrast to conventional one when short-circuit accident is occurred. Therefore molded case circuit breaker improved in aspects of interrupting capacity of short circuit current in this system is needed. The arrangement and quality of the material of grids in arc quenching room are also designed optimally by the analysis of arc driving forces.
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A purpose of this paper is to recognize partial discharge pattern for cable insulation. The classification of PD sources was widely studied for two decades. this research sought to use the partial discharge detection method, and to diagnose the interface of cable, which is deemed vulnerable of cable systems. A research abalyzed faults that can occur in the interface of cable joint as well as accident mechanisms, manufactured test 22.9kV CNC cable, invented artificial faults and carried out partial discharge detection experiments. As a result, various PD pattern along defect measured and distinguished.
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Dependence of radical and ion densities on Plasma Parameters is theoretically investigated in
$Cl_2$ /Ar plasma discharges. Firstly, a set of reliable rate coefficients is obtained by direct calculations with cross section data set and by comparing them with previously reported values. Then, some global discharge simulations are performed for ICP(inductively coupled plasma) discharges and the results are compared with experimental results. Finally, the validated data set is used to analyze the dependence of radical and ion densities, which are usually not easy to be measured, on electron density arid temperature. -
With the advent of nano-particle fillers in insulating materials, the insulating materials of superior quality have come to fore. In the recent past, nanocomposite LDPE/XLPE (Low Density Polyethylene/Cross Linked Polyethylene) power cable dielectrics have been synthesized. A preliminary evaluation of these new class of materials seem to show that, addition of small amounts of sub-micron inorganic fillers improved the dielectric properties of the composite, in particular, the volume resistivity, and the DC breakdown strength. The thermal behaviour, for example, the stability of composites against decomposition and ensuing electrical failure, do not seem to have been addressed. In a conventional XLPE insulated cable, the average thermal breakdown strength and maximum temperature at the onset of breakdown were seen to be markedly lower than the corresponding intrinsic breakdown strength and decomposition temperature. In this page, analysis of DC Breakdown of nano-composite insulating material for HVDC Cable is introduced.
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Voltage circuit breakers are widely used in power distribution systems to interrupt fault current rapidly and to assure the reliability of the power supply. Power distribution system requires the transformer with higher capacity than ever, but this ever, but this may be the cause. of the increasing of short circuit current in contrast to conventional one when short-circuit accident is occurred. Therefore molded case circuit breaker improved in aspects of interrupting capacity of short circuit current in this system is needed. By using the proposed methods in this paper, such as new arc quenching structure of grid would contribute to minimizing the MCCB, realization of high interrupting performance and reducing the design time and development cost.
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전력기기용 기체절연매질로서 일반적인 전력기기용 절연기체로는 공기와
$SF_6$ , dry air 등이 사용되고 있으며, 초전도전력기기용 절연기체로는 기체헬륨과 기체네온 등이 주로 사용되고 있다. 본 연구에서는 일반적인 전력기기용 절연기체로 주로 사용되는 공기와 초전도전력기기용 절연기체로 사용되는 기체헬륨의 절연특성을 구 대 평판 전극을 이용하여 비교, 분석하였다. 실험에 사용된 구 대 평판 전극은 절연실험에 의한 기계적 손상을 최소화하기 위하여 스테인레스 스틸을 이용하여 제작하였으며, 공기와 기체헬륨 각각에 대하여 다양한 구 전극의 직경과 전극간격에 대한 절연실험이 수행되었다. 이러한 두 기체의 절연실험 결과를 분석하기 위하여 유한요소해석법을 사용하였다. 본 연구를 통하여 기체의 절연파괴특성은 절연기체의 최대전계에 대한 함수로 표현될 수 있다는 것을 알 수 있었으며, 절연파괴 특성 분석을 통하여 절연기체의 종류에 따른 다양한 전력기기의 절연설계법을 확인할 수 있었다. 또한 본 연구결과는 일반 전력기기뿐만 아니라 초전도전력기기의 절연설계법 확립에 도움이 될 것으로 기대된다. -
IT 산업의 발달과 더불어 카메라, 휴대폰, 노트북, 캠코더 등 전기전자 응용분야에 복합기능성 실리콘 고무 시트가 사용되고 있다. 본 연구에서는 실리콘 고무의 사용시 발생하는 정전기를 방지하기 위해 습도와 온도 변화에 따른 정전기 대전전압을 측정하였다. 카본양의 증가에 따라서 대전전압이 감소하였으며 습도가 증가됨에 따라 정전기 대전량은 감소하였다. 12Phr카본 첨가시 대전과 동시에 완화가 일어남을 확인했다.
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휴대용 전자장비에 대한 수요증가와 합께 전자제품의 소형화, 박형화에 대한 요구가 점점 증대되고 있는데 전원 공급부가 대부분의 휴대용 전자장비에 있어서 가장 큰 부피를 차지하고 있다. 이러한 문제점올 해결하기 위한 방법으로 기존 마그네틱 권선 변압기를 압전 변압기로 대체하는 것을 고려할 수 있다. 그러나 ZVS 조건을 만족하기 위해서 입력 매칭 회로를 추가적으로 병렬 혹은 직렬로 인덕터를 추가적으로 사용해야 된다. 따라서 본 논문에서는 입력 매칭 회로의 인덕터 사이즈 팩터의 최적화에 대한 모델링을 분석 하고, 최적의 매칭 회로의 설계를 위한 가이드라인을 제시하였다.
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On-line partial discharge(PD) diagnostic system is the most prominent systems to diagnose insulation condition for the high voltage rotating machines. Partial discharge measuring system(PDMS) series with ceramic coupler(PD detecting sensor) installed hydro generator and high voltage motor have been measured the PD data for many years. The trend of PD magnitude in the on-line PD system increased for some machines. These machines showed a same result in the conventional off-line PD test and PD magnitude decreased after stator winding insulation cleaning. This case study show that PDMS has been proved to be good results by comparing PD magnitude with on-line and off-line PD test and it is important to plan the maintenance project for the hydro generator stator winding because PD value was decreased after insulation cleaning.
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Suspension insulator have made use of porcelain insulator mainly, but polymer insulator is using recently. Polymer suspension insulator have advantage that it is light than porcelain insulator. The ageing performance is excellent and it is possible for mass production. There is high possibility of mountain fire because a lot of potential inflammables such as fallen leaves are stacked on the ground Therefore surface aging of polymer insulator most of the overhead transmission lines in Korea are operated on the mountain need analysis of transmission line into forest fire. surface aging property is analyzed by SEM, EDX, XPS, FTIR, DSC in this paper.
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The mold transformers have been widely used in underground substations in large building and have some advantages in comparison to oil-transformer, that is low fire risk, excellent environmental compatibility, compact size and high reliability. In addition, the application of mold transformer for outdoor is possible due to development of epoxy resin. The mold transformer generally has cooling duct between low voltage coil and high voltage coil. A mold transformer made by one body molding method has been developed for small size and low loss, but it needs some cooling method because heat radiation between each winding is difficult. In this paper, the temperature distribution and thermal stress analysis of H class 100kVA pole cast resin transformer for power distribution are investigated by FEM program.
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The purpose of development is to localize a connector for connection of cable and GIS for underground transmission system. The cable connector for GIS provides electrical insulation of GIS housing part and makes connection of ultra high voltage electrical apparatus and power cable by controlling electrical stress between electrodes of power cable termination. Generally Korean switchgear makers are using a connector for GIS made by foreign companies. We manufactured sample by best structure design of great capacity conductor connecting part and then modified the design by analysis of shape and section. We completed the suitable sample for current cycling test condition of conductor connecting part sample and ensured surge characteristics of line by short-time current test.
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본 논문에서는 composite hollow bushing에 사용되는 FRP tube의 winding 각도 및 장력 변화에 의한 변위 특성을 해석하였다. Winding 각도 및 장력에 따라 FRP tube의 인장 및 굽힘강도 특성이 변화되므로 최적의 composite bushing의 설계하기 위해서는 이에 대한 해석 및 시험이 요구된다. 따라서, 본 논문에서는 와인딩 각도 및 와인딩 장력에 따른 굽힘강도와 변위에 대하여 고찰하였으며, 와인딩 장력에 따른 각각의 특성에 대해서도 검토하였다.
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산불에 노출되는 경우 열충격으로 작용하는 패턴과 특성을 검토하여 가속열화시험에 반영하는 것이 필요하다. 본 연구에서는 산불환경을 모의하여 복합열화시험을 실시하기위해 복합가속열화 챔버를 구축하였다. 온도는 주로
$200^{\circ}C$ 에서 최대$1000^{\circ}C$ 까지 변화를 주면서 예비시험과 본시험 실하였다. -
This paper introduces a measurement system that measures behavior and electrical characteristics of overhead contact line irregular sections in real-time. For verification, we developed a prototype of the real-time overhead contact line irregular section behavior measurement system and a monitoring system for field tests. The current and temperature of contact wires and messenger wires were measured real-time by applying the system at KTX a commercial line. Therefore, acquiring data is possible with the developed system and this system that measures one of the fundamental and key factors, the catenary current, should be applicable to various areas such as detecting characteristics for designing overhead contact lines, enhancing speed, and enhancing energy.
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This paper introduces an comprehensive monitoring and management program for implementation of a real-time monitoring system that monitors condition of urban railway AC/DC transformers, disconnecting switches, circuit breakers, regulators, and GIS (Gas Insulated Switchgear). Especially, the system is applied to diagnose the overall condition of urban railway substations by sending acquired data through an OPC server to a database, effectively storing and monitoring conditions simultaneously. The above system is a management based system and is also applicable to small-scale systems.
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A number of utilities are planning an realization of green railway technology in the next several years and still continue. The state of green railway technology covers a broad array of electric system capabilities and increase energy efficiency through the renewable energy system and smart operation of train and electricity infrastructure. The purpose of this paper is to introduce the smart electricity infrastructure in railway and item of green railway technology.
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In this paper, we analyzed the frequency spectrum of radiated electromagnetic waves which is generated by corona discharges as a basic study to develop a on-line diagnostic technique for power facilities installed in a closed-switchboard. Five types of electrode system were arranged to simulate corona discharge. The experiment was carried out in an electromagnetic shielding room, and the measurement system consists of an Ultra Log Antenna and an EMI Test Receiver. These results showed that the frequency spectrum of corona discharges exists widely in ranges from 30 to 1,000 [MHz].
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Among the various factors influencing the service life of the electric equipment, the performance of dielectric insulation materials has an important role to determine their whole service life. In order to determine the degradation of insulating materials immersed in extremely low temperature media such as liquid nitrogen, the abrupt temperature change from cryogenic to normal room temperature should be considered. But the assessments of low-temperature aging test method for the dielectric materials immersed in liquid nitrogen considering these conditions were not fully reported. Therefore, for the fundamental step to establish the suitable degradation test methods for cryogenic dielectric materials, we focused on the evaluation of ageing test methods for dielectric materials exposed to low temperature environments considering thermal shock by cool-down and warm up test.
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To detect the PD events, we have studied a fusion sensor, the UHF sensor and the single-walled carbon nanotube(SWNT) gas sensor. We are accustomed to the UHF sensor which have employed to detect the partial discharges in apparatus GIS-like. But the SWNT gas sense is a newly way proposed to detect the partial discharges. In this study, we monitored not only the changes of the electrical conductance of the SWNT sensors in responding to the PD events but also the signal of the UHF sensor at the same time with IEC 60270 standard method for reference on the partial discharge events.
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As the industrial technology is getting higher, the pulsed power technology is required from various fields such as thermonuclear fusion energy sources, military applications, electric power distribution, and a variety of new specialized needs. This technology deals with the generation of very high power electromagnetic pulses through fast switching. We fabricated a pulsed power generator, named EMD pulse generator, by using Marx circuit with 200 kV high, 50 ns fast rise time. In this paper, we described about an effect of stray capacitance of coaxial Marx generator, EPG-AM200k, and a comparing the results of experiments and circuit analysis.
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A Static Induction Thyristor (SI-Thyristor) has a great potential as power semiconductor switch for pulsed power or high voltage applications with fast turn-on switching time and high switching stress endurance (di/dt, dV/dt). However, due to direct commutation between gate driver and SI-Thyristor, it is difficult to design optimal gate driver at the aspect of impedance matching for fast gate current driving into internal SI-Thyristor. Thus, to penetrate fast positive gate current into steady off state of the SI-Thyristor, it is proposed and proceeded the internal impedance calculation of the SI-Thyristor at steady off state with the gate driver while switching conditions that are indicated applied gate voltage,
$V_{GK}$ and applied high voltage across anode and cathode,$V_{AK}$ . -
The hydrophobic coating for multi-walled nanotubes was treated with toluene and trimethylchlorosilane glow discharge plasma under low pressure, and the hydrophobic surface of the treated MWCNT was investigates. In order to investigate the effects of -CH components from the toluene and TMCS glow plasma, we conducted on the total surface free energies of the MWCNT powder, which was calculated by measuring the contact angle between the cushion of MWCNT powder and the probe liquids. The total surface free energies were determined by Owens-Wendt equation and drastically decreased.
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Diagnostic tests were performed on six high voltage motors. These tests included ac current, dissipation factor(tan6) and partial discharge(PD) magnitude. The rewind of motor stator insulation at rated voltage is assessed by the results of these tests. After completing the diagnostic tests, the stator windings of motors were subjected to gradually increasing ac voltage, until the insulation punctured. No. 1 and No.2 motors(4.16 kV) failed near rated voltage of 12.3 kV and 14.2 kV, respectively. The breakdown voltage of No.3 and No.4 motors(6.6 kV) was 17.6 kV and 17.8 kV, respectively. These motors are higher that expected for good quality coils in 6.6 kV class motors.
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The Hybrid Fault current limit combined the semiconductor switching components, for example IGBT, with mechanical fast switch reduced mechanical and thermal stress on electrical machines, for example circuit breaker, transformer, and so on, in the electric network. We had focused on reducing the voltage stress of the semiconductor switching components by the mechanical fast switch. As a result, we could dramatically reduce amount of semiconductor switching components only using parallel arrangement of them, not series.
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대표적인 친환경 차단부로 Vacuum Interrupter(VI)를 에폭시 수지로 성형한 Embedded VI 의 적용이 확대되고 있다. 이러한 Embedded VI의 제작에 있어, 기존에는 대부분 VI의 Ceramic 표면과 에폭시 성형층의 계면에 고무재질의 완충층을 적용하는 방식으로 제작되었다. 본 연구에서는 이러한 완충층 형성시 발생되는 문제를 해결하기 위한 방법으로 VI외부에 추가적인 완충층을 형성하지 않고, 에폭시 수지를 성형하는 Direct Molding 방안을 제시하고. VI표면과 에폭시간에 화학적 결합 메커니즘을 도출하여 Direct Molding 을 적용한 Embedded VI의 제작기술을 개발하였다.
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This study describes the optimal design of shield to improve the insulation performance of vacuum interrupter(VI). Axi-symmetric finite element routine including floating boundary condition for shields was applied to analyze electric potential and field distribution in VI. A (
$\mu-\lambda$ ) Evolution Strategy(ES) is employed as optimization method. Three design variables of shield are selected for minimizing the maximum electric field strength in VI. Finally, optimal solution for shield is obtained and compared with the result of the prototype. -
The high-voltage X-ray generator recently used is very popular, because that can be miniaturized, increased in generating efficiency, elaborated in output control. All these features are available with high-frequency made by using an inverter, the fast switching semiconductor device. In this paper to identify the differences among types of rectification, we compared output ripple with full-wave rectification and dual-voltage rectification methods.
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The conjugated oligomers with rigid and fused-ring structures are of interest for the solution-processable organic thin film transistors (OTFTs) due to their well defined structure and high purity. In this study, alkyl substituted benzothiophene based oligomers were synthesized by a novel route, the key point of which is the acid-induced intermolecular cyclization reaction of aromatic methyl sulfoxides, and were confirmed by
$^1H$ -NMR and FT-IR studies. The obtained oligomers showed the good solubility in common organic solvents such as hexane, chloroform, and dimethylchloride at room-temperature, which is due to the introduced alkyl chain. The physical and optical properties of the oligomers were studied using differential scanning scalorimetry (DSC), cyclic-voltammetry (CV), UV-visible and PL spectra studies. Solution processed OTFT device based on synthesized oligomers show a high hole mobility of up to$0.01\;cm^2V^{-1}s^{-1}$ ,$I_{on}/I_{off}$ of$10^5$ and threshold voltage of -14V. -
고출력 레이저 다이오드는 광 디스크, 고체 레이저 여기, 광섬유 증폭기, 레이저 프린터, 위성 간 통신 등의 여러분야에 응용되고 있고. 고효율, 저가격, 초소형등과 같은 장점으로 수요가 점점 증가하고 있다. 최근 레이저 다이오드의 광출력 향상 및 열적 안성성를 위해 양자점(Quantum Dot) 응용에 대해 많은 연구가 진행되고 있다. 양자점 기반 레이저 다이오드는 전자가 3차원으로 구속되어 있어 열적 안정성이 우수할 뿐만 아니라 낮은 문턱전류밀도로 인해 열 발생이 적어 광출력 감소 현상을 지연시킬 수 있다. 또한 발광면에서의 재결합 확률이 낮아 표면재결합에 의한 신뢰성 열화 문제를 해결할 수 있어 고신뢰성의 레이저 다이오드를 개발할 수 있다. 고출럭 808 nm 양자점 레이저 다이오드 개발을 위해서는 레이저 다이오드의 활성 영역인 양자점 구조에 대한 연구가 필수적이다. 본 연구에서는 최적화된 고출력 808 nm 양자점 레이저 다이오드 에피 성장을 위해 에피 구조에 대한 2D 시뮬레이션을 수행하였고, 양자점 밀도 및 에피층 변화에 따른 최적 양자점 구조에 대한 연구를 수행하였다.
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The power of semiconductor laser diodes has been limited primarily by the heating effects which occur at high optical intensities. The actual limiting event can take one of a number of forms such as. catastrophic optical damage or filamentation. A general approach to this problem is to design a heterostructure which creates a high powered output while maintaining low internal optical intensities. A graded index separate confinement heterostructure (GRIN-SCH) is one such structure that accomplishes the above task. Here, the active region is sandwiched between graded index layers where the index of refraction increases nearer to the active layer. This structure has been shown to yield a high efficiency due to the confinement of both the optical power and carriers, thereby reducing the optical intensity required to achieve higher powers. The optical confinement also reinforces the optical beam quality against high power effects. Quantum dots have long been a desirable option for laser diodes due to the enhanced optical properties associated with the zeroth dimensionality. In our work, we use PICS3D software created by Crosslight Software Inc. to simulate the performance of In0.67A10.33As/A10.2Ga0.8AsquantumdotsusedwithaGRIN-SCH. The simulation tools are used to optimize the GRIN-SCH structure for high efficiency and optical beam quality.
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In a previous report, we demonstrated that poly (3,4-ethylenedioxythiophene) derived from poly (ionic liquid) (PEDOT:PIL) constitutes a polymeric hole-injecting material capable of improving device lifetime in organic light-emitting diodes (OLEDs).was attributed to aprotection characteristic of PEDOT:PIL for the indium extraction from ITO electrodes, which frequently occurrs in the OLED device with the conventional PEDOT materials. In this study, we report the OLED device lifetime as well asvice efficiencycan be further improved with the modified PEDOT:PIL in whichorganic compounds are incorporated. The deviced performance will be presented in terms of device lifetime and efficiencies.
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We studied the thermal and electric effect of 2D and 3D p-n photovoltaic diode structures with and without surface texturing. By analyzing the numerical simulation results of I-V characteristics and lattice temperature distributions, we systematically studied the effect of different texturing structures and different doping concentration on the characteristics of the silicon p-n photovoltaic devices. The, efficiency of the device with the surface texturing shows more than ~ 2% enhancement compared to the reference devices without texturing. The tendency of the efficiency of doping concentration has been studied with boron doping of
$10^{14}{\sim}10^{17}cm^{-3}$ and phosphorus doping of$10^{15}cm^{-3}$ . In addition to that, the study of changing phosphorus doping of$10^{15}{\sim}10^{18}cm^{-3}$ with boron doping of$10^{14}cm^{-3}$ has been examined. It has been shown that the texturing structure not only improves the light trapping but also plays an important role in the heat radiation. -
We have investigated the holographic grating formation on Ag-doped amorphous chalcogenide AsGeSeS thin films with Ag thickness. Holographic gratings have been formed using Diode Pumped Solid State laser (DPSS, 532.0nm) under [P:P] polarized the intensity polarization holography. The diffraction efficiency was obtained by +1st order intensity.
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본 연구에서는 ZnO를 기반으로 하여
$In_2O_3$ ,$Ga_2O_3$ 를 혼합한 IGZO 박막의 물성들을 분석하였다. 광학적 특성 결과 가시광 영역에서 모두 80%이상의 투과율을 나타내었으며, 전기적 특성을 조사한 결과$In_2O_3:Ga_2O_3$ :ZnO (1:9:90 wt.%)의 IGZO박막에서$1.90{\times}10^{-3}\;\Omega/cm$ 의 비저항을 확인 할 수 있었다. 또한 상온에서$400^{\circ}C$ 로 기판온도에 변화를 주어 실험하였으며, 결정성을 분석하기 위하여 XRD (PANALYTICAL CO.)를 사용하였고, SEM (JEOL CO.) 을 이용하여 IGZO박막의 미세 구조를 확인하였다. UV-ViS spectrophotometer (SHIMADZU CO.) 을 사용하여 광학적 특성을 측정하였으며, Hall effect측정 장비를 이용하여 캐리어 농도 및 Hall이동도 변화에 따른 비저항을 비교 분석하였다. -
본 연구에서는 귀금속 촉매 식각법을 이용하여 고효율의 태양전지 응용을 위한 p형 실리콘 와이어 어레이를 제조 하였다. 실리콘 와이어 어레이를 기판에서 분리하기 위해 고무 상의 고분자인 폴리디메틸실록산 (polydimethylsiloxane)을 스핀 코팅을 이용하여 실리콘 와이어 어레이 위에 증착하였다. 희석제의 함량과 스핀코팅의 회전수에 따라 폴리디메틸실록산의 박막두께를 조절하였으며, 기계적 방법으로 실리콘 와이어 어레이를 기판에서 분리할 수 있음을 보여주었다.
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This research proposed an advanced Electronic bead (EB) using MMA (Methy methacrylate) and CCA (Charge Control Agent). In the first, this paper presents about measurement method and characterization analysis of EB with wet coating method. Furthermore, this work presents the positive and negative EB fabrication procedure. As the experimental results, the proposed EB with charge to ratio[Q/M] is very attractive to Electronic paper driving characterization.
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X-ray systems for medical treatment use noninvasive procedures. I fabricated a high tension generator of a full-wave rectification type using a LC resonant inviter. It is said that a full-wave rectifying X-ray equipment such as the fabricated system can shorten initiating period and be precision control because of stable output, compared with the X-ray equipment of a half wave rectifying type used in the usual clinical medicine. In order to evaluate the capability of the fabricated high tension generator, I performed exposure dose characteristics experiments.
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Rhenium-Iridium(Re-Ir) thin films were deposited onto the tungsten carbide(WC) molding core by sputtering system. The Re-Ir thin films on tungsten carbide molding core were analyzed by scanning electron microscope(SEM) and surface roughness. The Re-Ir coating technique has been intensive efforts in the field of coating process because the coating technique and process have been their feature, like hardness, high elasticity, adrasion resistance and mechanical stability and also have been applied widely the industrial and biomedical areas. In this report, tungsten carbide(WC) molding core was manufactures using high performance precision machining and the efforts of Re-Ir coating on the surface roughness.
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There have been intensive and continuous efforts in the field of DLC coating process because of their feature, like high hardness, high elasticity, abrasion resistance and chemical stability and have been applied widely the industrial areas. In this report, tungsten carbide(WC) mold core was manufactures using high performance precision machining and the efforts of DLC coating on the surface roughness and SEM of WC mold was evaluated.
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ZnS:Mn yellow phosphors doped with Cu for white light emitting diodes were synthesized by solid state reaction method. Photoluminescence excitation spectra originated from
$Mn^{2+}$ were ranged from 450 nm to 500 nm. The yellow emission at around 580 nm was associated with$^4T_1{\rightarrow}^6A_1$ transition of$Mn^{2+}$ ions in ZnS:Mn,Cu phosphors. The highest photoluminescence intensity of the phosphors under 405 nm excitation was obtained at Cu concentration of 0.02 mol%. -
This research proposed an advanced Electronic bead (EB) using MMA (Methy methacrylate) and CCA (Charge Control Agent). In the first, this paper presents about measurement method and characterization analysis of EB and nano-silica with pulse waveform in aging. Furthermore; this work presents the positive and negative EB fabrication procedure. As the experimental results, the proposed EB with square waveform is very attractive to Electronic paper driving characterization.
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In this study, we demonstrate that ZnO deposited onto
$SiO_2$ substrates by magnetron sputtering produces p-type ZnO at higher$O_2$ pressure and n-type ZnO at lower$O_2$ pressure. We also report the effect of hydrogen peroxide ($H_2O_2$ ) on the stability of undoped ZnO thin films. The films were immersed in 30%$H_2O_2$ for 1 min at$30^{\circ}C$ and annealed in$O_2$ at$450^{\circ}C$ . The carrier concentration, mobility. and conductivity were measured by a Hall effect measurement system. The Hall measurement results for ZnO films untreated with$H_2O_2$ but annealed in$O_2$ indicate that oxygen fraction greater than ~0.5 produces undoped p-type ZnO films, whereas oxygen fraction less than ~0.5 produces undoped n-type ZnO films. This is attributed to the fact that the oxygen vacancies ($V_o$ ) decrease and the oxygen interstitials ($O_i$ ) or zinc vacancies ($V_{Zn}$ ) increase with increasing oxygen atoms incorporated into ZnO films during deposition and$O_2$ post-annealing. -
Jang, Kyung-Soo;Park, Hyeong-Sik;Ryu, Kyung-Ryul;Jung, Sung-Wook;Jeong, Han-Wook;Yi, Jun-Sin 144
투명 산화물 반도체로 가장 널리 사용되는 산화아연 반도체의 온도 증가에 따른 비정상적인 비저항의 감소를 보고 한다. 이는 직류 마그네트론 스퍼터링 시스템을 이용하여 연구를 진행하였으며, 공정 변수 중 압력 가변만 진행하였다. 상온에서의 전류 전압 곡선을 바탕으로 온도 증가에 따른 전류-전압 곡선 해석, 결정성 확인을 위하여 XRD 장비를 이용하였으며, 화학적인 조성 확인을 위해 EDS 장비를 이용하였다. 이를 통해 아연과 산소의 비율, (100) 결정성 방향 등의 결과를 통해 온도 증가에 따른 비정상적인 전기적 비저항 감소에 대한 현상을 확인하였다. -
Ryu, Kung-Yul;Baek, Kyung-Hyung;Park, Hyeong-Sik;Jang, Kyung-Soo;Jung, Sung-Wook;Jeong, Han-Uk;Yun, Eui-Jung;Yi, J. 145
It is observed from SEM images that many voids were created after annealed by helium gas. The PL spectra of the ZnO samples revealed the strong violet emission peaks at 3.05 eV with the relative weak near band edge UV emissions. It was concluded from experiment results that native$Zn_i$ and$V_o$ donor defect levels can be generated below the conduction band edge due to the incorporation of helium atoms decomposed from helium gas into the ZnO matrix. He atoms in ZnO matrix will affect the interface trap existing in depletion regions located at the grain boundaries, which leads to the creation of$Zn_i$ and$V_o$ donor defect levels. -
Electrical properties of Large-grain-size TIT with 7/7
${\mu}m$ channel width and length which gate insulator is made of 20nm$SiO_2$ and 80nm$SiN_x$ . was fabricated and measured with Large-grain-size technic(MICC) and compared to ELA technic's data. The field-effect mobility was decreased from 106.78 to$88.74\;cm^2$ /Vs and threshold voltage also decreased from -1.8382 to -0.9529 V, when TFT process is changed from ELA technic to MICC technic. Subthreshold swing, also, increased from 0.22 to 0.32 V/dec and$I_{on/off}$ ratio decreased from$1.12{\times}10^8$ to$5.75{\times}10^7$ . -
Baek, Kyung-Hyun;Park, Hyeong-Sik;Jang, Kyung-Soo;Jung, Sung-Wook;Ryu, Kyung-Yul;Yun, Eui-Jung;Yi, J. 147
PTC Thermistors specimens were fabricated by added$MnO_2$ as donors, and$Nb_2O_5$ as acceptors and sintered$1250^{\circ}C$ /2hrs. Average grain size decreased with increased in added$MnO_2$ , and increased with added in$Nb_2O_5$ . But, appeared liquid phase as$Bi_2O_3$ and$TiO_2$ , affect to grain growth. XRD result, peak strength waslowed then crystallization not well, but, secondary phase were not showed all specimens. All specimens resistance were so high, about$40M{\Omega}$ over, couldn't measured to those resistance and doesn't appear PTCR effect. -
Measuring the a-IGZO TFTs with various temperatures was found to induce a threshold voltage shift and a change of the subthreshold gate voltage swing. Characteristic change is dependant on a material of the substrate at the temperature from
$20^{\circ}C$ to$100^{\circ}C$ . The threshold voltage was shifted to the left from -2.7V to -61V on SiO2/galss. But, as the temperature increases form$20^{\circ}C$ to$100^{\circ}C$ . the threshold voltage was shifted to the right from 0.85V to 2.45V. -
The effect of titanium (Ti) coating over the surface of carbon nanotubes (CNTs) on field emission characteristics was investigated. Since the work function of CNTs emitter is about 5.0 eV, field emission would be observed at lower voltage if this work function gets lower. Work function of Ti is approximately 4.09eV. Field emission characteristics of as-grown and Ti-coated CNTs were measured in a diode-type configuration. The resultant emission characteristics revealed that thin(
$50{\AA}$ -thick) Ti-coated CNTs could be a better electron emitter with lower emission voltage and higher emission efficiency. -
Carbon nanotubes have drawn attention as one of the most promising emitter materials ever known not only due to their nanometer-scale radius of curvature at tip and extremely high aspect ratios but also due to their strong mechanical strength, excellent thermal conductivity, good chemical stability, etc. Some applications of CNTs as emitters, such as X-ray tubes and microwave amplifiers, require high current emission over a small emitter area. The field emission for high current density often damages CNT emitters by Joule heating, field evaporation, or electrostatic interaction. In order to endure the high current density emission, CNT emitters should be optimally fabricated in terms of material properties and morphological aspects: highly crystalline CNT materials, low gas emission during electron emission in vacuum, optimal emitter distribution density, optimal aspect ratio of emitters, uniform emitter height, strong emitter adhesion onto a substrate, etc. We attempted a novel approach to fabricate CNT emitters to meet some of requirements described above, including highly crystalline CNT materials, low gas emission, and strong emitter adhesion. In this study, CNT emitters were fabricated by filtrating an aqueous suspension of highly crystalline thin multiwalled CNTs (Hanwha Nanotech Inc.) through a metal mesh. The metal mesh served as a support and fixture frame of CNT emitters. When 5 ml of the CNT suspension was engaged in filtration through a 400 mesh, the CNT layers were formed to be as thick as the mesh at the mesh openings. The CNT emitter sample of
$1{\times}1\;cm^2$ in size was characteristic of the turn-on electrical field of 2.7 V/${\mu}m$ and the current density of 14.5 mA at 5.8 V/${\mu}m$ without noticeable deterioration of emitters. This study seems to provide a novel fabrication route to simply produce small-size CNT emitters for high current emission with reliability. -
본 연구에서는 배위자로 공액계 벤젠고리로 연결된 중심금속이 이리듐인 착물화합물과 합성하여 인광재료로서의 가능성을 실험하였다. 새로운 이리듐착물화합물의 화학적 구조를 알아보기 위해
$^1H$ -NMR,$^{13}C$ -NMR, UV-vis, spectrophotometer를 사용하였으며, 광 물리학적, 전기화학적 특성에 대한 측정은 spectrofluorometer, cyclic voltammetry를 통하여 측정하였다. 이리듐 단핵 및 이핵착체는 589~598nm의 영역에서 발광파장이 확인되었으며, DMSO[$5{\times}10^{-5}$ ]용액에서 양자효율이 단핵 착물화합물의 경우 0.1, 이핵착물화합물의 경우 0.13으로 나타났다. 이핵 이리듐착물화합물의 전기화학적 특성은 energy gap은 2.45eV, optical band gap은 2.58eV로 계산되었다. -
본 연구에서는 인광 효과가 큰 heavy metal 인 이핵 Iridium 착체가 합성된 구조적, 광학적 및 전기적 특성을 배경으로 하였다. 가교제로는 카본 conjugated 된 리간드 bipyridine계 배위자를 사용하여 단핵 및 이핵 Platinum 착물 화합물을 합성 하였다. 합성 되어진 이핵 Platinum 착물 화합물의 화학적 구조를 결정하기 위해
$^1H(^{13}C)$ -NMR, UV-vis, Spectro Photometer, MALDI TOF-MS 등을 사용하였으며, 광 물리적, 전기화학적 측정을 Spectrofluoromete, Cyclic Voltammetry를 통해 관찰 하였다. -
We have developed blue phosphorescent organic light emitting diode using spin-coated poly(9-vinylcarbazole) (PVK) host layer doped with blue phosphorescent material, Iridium(III) bis(4,6-difluorophenyl)-pyridinato-N,C2) picolinate (FIrpic). the concentration of FIrpic dopants was varied from 2% to 10%. The electrical and optical characteristics of the blue phosphorescent OLED with PVK:FIrpic layer were investigated.
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We have developed transparent OLED with green phosphorescent doped layer using transparent metal cathode deposited by thermal evaporation technique. Phosphorescent guest molecule,
$Ir(ppy)_3$ , was doped in host mCP for the green phosphorescent emission. Ca/Ag double layers were used as a cathode material of transparent OLED. The turn-on voltage of OLED was 5.2 V. The highest efficiency of the device reachs to 31 cd/A at 2 mA/$cm^2$ . -
We have investigated organic light-emitting devices by doping phosphorescent orange and fluorescent blue emitters into the separate layers of single host. The electroluminescence spectra and current efficiency were strongly dependent on the location of each doped layers. The luminance-voltage (L-V) characteristics of the device2 (ITO/Hole Transport Layer/Orange Phosphorescent emissive layer/Blue Fluorescent emissive layer/Electron Transport Layer/liF/Al) showed the maximum current efficiency of 19.5 cd/A.
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We have developed highly efficient blue phosphorescent organic light-emitting devices (OLED) with simplified architectures using blue phosphorescent material. The basis device structure of the blue PHOLED was anode / emitting layer (EML) / electron transport layer (ETL) / cathode. The dopant was partially doped into the host layer for investigating recombination zone, current efficiency, and emission characteristics of the blue PHOLEDs.
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본 논문에서는 OLED (organic light-emitting device)의 광추출효율을 향상시키기 위한 마이크로 렌즈를 개발하였다. 차세대 평판디스플레이 및 차세대 면광원으로 주목받고 있는 OLED는 자발광소자이며, 빠른 응답속도와 넓은 시야각, 낮은 구동 전압등의 장점을 가지고 있다. 하지만 OLED는 아직까지 해결해야할 여러 가지 문제점들을 가지고 있다. 특히, 휘도와 수명 특성은 OLED의 운명을 좌우한다. OLED의 발광층에서 생성된 빛은 내부에서의 웨이브 가이드 효과 등으로 인하여 약 25%정도만이 외부로 방출되는 것으로 알려져 있다. 내부에서 반사되어 소멸되거나 측면으로 방출되는 빛을 OLED 전면으로 방출시키기 위한 마이크로 렌즈를 제작하였고 광추출향상율은 8%이었다.
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최근 유리산업은 에너지 절감효과와 친환경 재료의 사용을 바탕으로 하여 기존 유리의 특성을 변화시켜 보다 양질의 재료를 생산해 내고자 한다. 또한 인위적으로 가시광선 전파장에 대한 투과율을 조절할 수 있는 유리 제작의 필요성이 대두되어 스마트 윈도우(smart window)라는 신소재유리가 주목받고 있다. 스마트 윈도우는 태양광의 투과율을 자유롭게 조절할 수 있는 물질을 윈도우에 삽입함으로써 필름을 장착하는 방식에 비하여 태양광의 투과율이 대폭 신장됨과 동시에 사용자에게 고도의 편의성을 제공하는 장점이 있다. 액정과 고분자 매트릭스를 혼합한 PDLC용액을 이용하여
$3{\times}4cm^2$ 크기의 스마트 윈도우를 제작하여 유리 두께, 광량, 스페이서 크기에 따른 투과율을 측정하였다. -
Park, Min-Jung;Kim, Jin-Chul;Kim, Sei-Min;Jang, Sun-Ho;Park, Il-Kyu;Park, Si-Hyun;Cho, Yong;Jang, Ja-Soon 159
We conducted bum-in test by current stress to evaluate acceleration reliability characteristics about p-resistivity influence of GaN-based light-emitting diodes. The LEDs used in this study are the polarization field-induced LED(PF-LED) having low p-resistivity and the highly resistive LED(HR-LED) having high p-resistivity. The result of high stress experiment shows that current crowding phenomenon is occurred from the center of between p-bonding pad and n-bonding pad to either electrodes. In addition, series resistance and optical power decrease dramatically. These results means that the resistance of between p-bonding pad and p-GaN affect reliability. That's why we need to consider the ohmic contact of p-bonding pad when design the high efficiency and high reliability LEDs. -
Characteristics of p-InGaN/GaN Superlattice structure of the p-GaN according to annealing conditionsJang, Seon-Ho;Kim, Sei-Min;Lee, Young-Woong;Lee, Young-Seok;Lee, Jong-Seon;Park, Min-Jung;Park, Il-Kyu;Jang, Ja-Soon 160
In this work, we investigate ohmic contacts to p-type GaN using a Pt/Cu/Au metallization scheme in order to achieve low resistance and thermally stable ohmic contact on p-GaN. An ohmic contact formed by a metal electrode deposited on a highly doped InGaN/GaN superlattice sturucture on p-GaN layer. The specific contact resistance is$1.56{\times}10^{-6}{\Omega}cm^2$ for the as-deposited sample,$1.35{\times}10^{-4}{\Omega}cm^2$ for the sample annealed at$250^{\circ}C$ and$6.88{\times}10^{-3}{\Omega}cm^2$ for the sample annealed at$300^{\circ}C$ . -
In order to achieve low power consumption and the uniform power spectrum of LED BLU (Back Light Unit) system, new circuits with a 2 stage L-C (Inductor-Capacitor) coupler have been proposed. From the simulation results based on our proposed model, the ripple power of the L-C regulation-embedded BLU circuit shows a dramatic reduction by more than 89.3% as compared to the normal BLU (without L-C circuits). This indicates that the proposed circuit is very promising for the realization of high-efficiency BLU circuits.
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In this study, optical analysis for 100W LED safety street lighting was conducted. Experimental research on such single LED was the first undertaken. simulation modeling based on optical properties of single LED has compared single LED product also designed 100W simulation modeling has compared average road illuminance with Korean Industrial Standards for LED safety street lighting(KS C7658:2009). 100W safety street lighting (model: CE180-ST-OS) designed by simulation has been also compared between product and 100W simulation modeling, and error rates have showed average 5.6[%]. Designed 100W LED safety street lighting base on simulation modeling was proven by comparison experiments. Through the simulations and the corresponding analysis, it was found that the tested 100W LED safety street lamp had reasonable performance. Design method for LED safety Street lamps have been summarized, based on the optical analysis.
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기존 LED의 접합온도 및 열저항은 PKG 단계에서 측정 가능 하였다. PKG에서의 접합온도 측정방식과 같은 방법으로 C사의 1W High Power LED XP2 20개를 직렬 연결하여 모듈을 구성한 20W 가로등 모듈에 대하여 접합온도를 측정 하였다. 측정결과 20W 가로등 모듈의 접합온도는 약
$61^{\circ}C$ 로 나타났다. -
점광원 가정법은 광학계의 초점거리를 LED die 표면의 중심점으로 설정하고 LED 패키지의 발산형태는 이상적인 점광원으로 가정하여 설계하는 방법이며, 가초점 설계법은 focal smear라고 불리우는 초점영역의 가초점을 기준점으로 잡아 설계를 시행하는 방법이다. 실제 LED에서 빛이 발산하는 부분은 점광원이 아닌 부피를 가지고 있는 형태이기 때문에 점이외의 면에서 발생하는 오차와 가초점 영역 설정을 통한 설계는 결과에 오차를 발생시키게 된다. 따라서 구조 분석 실험 장비를 이용한 LED내부 구조를 분석한 후 이를 시뮬레이션 설계에 적용한 결과 기존 설계법에 비해 약 5%의 오차범위를 줄일 수 있었다.
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AZO:H films were prepared by RF magnetron sputtering system with a AZO (2wt%
$Al_2O_3$ ) ceramic target at a temperature of$150^{\circ}C$ . The annealing treatments were carried out in hydrogen ambient for 1hr at a temperature of$400^{\circ}C$ . The AZO:H films were etched with 1 % HCl. The influence of the properties of AZO:H films deposited in various working pressures is investigated. As a result, the AZO:H film deposited in 4mTorr showed excellent electrical property of$\rho=5.036{\times}10^{-4}{\Omega}cm$ and strongly oriented (002) peak. The transmittance in the wavelength of 450nm was above 80%. It can be used as front electrode for increasing efficiency of GaN LED. -
향후 LED 기술의 지속적인 발전을 통하여 LED 조명제품의 효율이 향상될 것이 기대되므로 LED 조명 제품화에 대한 많은 연구가 수행되고 있다. LED를 조명용으로 사용하기 위해서는 구동회로, 광학설계, 방열설계 등을 포함한 조명시스템의 구성이 필요하다. 이 중 구동회로는 사용용도와 LED 구동특성 등에 따라 구동회로를 구성하여야 하며 이러한 구동회로 기술에는 벅, 부스트, 벅-부스트 컨버터 방식이 있다. 본 논문에서는 정전류 구동회로를 사용함에 있어 부스트 방식을 사용한 컨버터를 통해 7EA의 LED를 구동하고자 설계하였다. 이때 구동전류는 500 [mA]로 설정하였으며 이에 따라 입력전압에 대한 전기적 특성을 측정한 결과 7 [V]이상일 때부터 전류특성이 안정화 되는 특성을 확인할 수 있었다.
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Ge-Sb-Se계 칼코게나이드 유리의 Melting 조건변화에 따른 특성변화를 연구하였다. Glass melting 조건(homogenization-temperature, homogenization-time, annealing) 에 따라 제작된 칼코게나이드 유리 bulk를 FT-IR, XRD, SEM 등의 분석장비를 이용하여 특성을 분석하였다. Homogenization temperature가 높을수록 석영관 급냉 시 발생되는 mechanical stress와 내부응력차로 인해 칼코게나이드 유리 깨짐현상이 증가하였으며 조성비와 melting 조건에 따라 XRD분석에서 확인되지 않는 미소결정이 SEM 분석결과 관찰되었다. 본 연구를 통해 칼코게나이드 유리의 melting 조건에 따른 경향성을 확인할 수 있었다.
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DCM derivatives were newly synthesized. The OLEDs with a DCM-A as an emitting layer was fabricated and analyzed their opto-electrical properties. The structures of OLEDs were I) ITO/DCM-A/Al, II) ITO/-NPD/DCM-A/LiF/Al, and III) ITO/-NPD/DCM-A/Alq3/LiF/Al. The EL peak of the DCM-A shows the red emission in the range of 700 nm. The structure I) shows that 1050 nW/cm2 at 510 mA/cm2. The structure II) shows that takes the most excellent luminance about 39,000 nW/cm2 at 290 mA/cm2. The EL structure ill shows luminance about 13,000 nW/cm2 at 6 mA/cm2.
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Sin, Gwang-Su;Kim, Jin-Hyeok;Gi, Hyeon-Cheol;Kim, Hyo-Jin;Go, Hang-Ju;Kim, Seon-Hun;Kim, Du-Geun;Han, Myeong-Su 169
650nm 적외선 차단 필터를 Macleod 프로그램을 이용하여 설계하고, 이온보조증착(IAD) 장비를 이용하여 코팅한 후 투과도, 파장, 두께특성을 조사하였다. 차단필터의 증착물질은$TiO_2$ (n=2.30) /$SiO_2$ (n=1.46) 을 사용하여 45층의 다층 박막으로 증착하였다. 코팅된 차단필터는 차단파장이 651 nm로써 평균${\pm}5$ nm 이내의 편차를 보였다. 420~630 nm 파장영역에서 평균 투과도는 89%이었으며, 투과도의 균일도는 약 2.12로써 매우 균일하였다. 투과도기 단파장 영역에서 감소된 것은 다층박막 증착 시 산소가 결핍된 것으로 판단된다. -
In this paper, we observed stretching of single-wall carbon nanotubes (SWCNTs) aggregates driven by the in-plane field in a homogeneously aligned nematic liquid crystal (LC) medium. Aggregates of SWCNTs started to stretch above the 0.5 V/
${\mu}m$ and stretched up to$1.83\;{\mu}m$ from original size with$0.74\;{\mu}m$ at 3.5 V/${\mu}m$ . -
Electro-optic characteristics of liquid crystal display using fringe field switching(FFS) device depend on many parameters such as cell retardation, electrode structure, rubbing angle, cell gap and dielectric anisotropy. In this paper, the light efficiency of FFS mode will be analyzed to confirm the electro-optic characteristics according to positive dielectric anisotropy such as transmittance, operating voltage and response time.
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Gim, Hye-Young;Kim, Woo-Il;Kim, Dae-Hyun;Kwon, Dong-Won;Im, Se-Hyeon;Lee, Seung-Hee;Jeong, Yeon-Hak;Ryu, Jae-Jin;Kim, Kyeong-Hyeon 172
The Patterned vertical alignment (PVA) mode has many advantages such as perfect dark state at the normal direction and wide viewing angle. However, PVA mode needs additional process to pattern electrodes of both substrates and complicated assembly process. Moreover, this mode shows slow response time. To overcome these problems, we use plane shape ITO on top substrate instead of patterned electrode and form proper tilt angle of LC director on the surface while maintaining these original merits. Consequently, we achieve fast response time and improve transmittance. -
We proposed viewing angle switchable liquid crystal display(LCD) associated with fringe-field switching (FFS) mode with high aperture ratio characteristic. In the device, single pixel is separated into two regions, named as main pixel for displaying images and sub pixel for viewing angle control. In sub pixel region, add the common electrode on the top substrate and the initial alignment of liquid crystal is Hybrid Alignment Nematic (HAN) state. In conclusion, we suggested that the device has high aperture ratio characteristic because the LC directors are rotated in which viewing angle control region are generated fringe electric field.
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In this article, the dry etching mechanism of ZnO thin films in
$N_2/Cl_2$ /Ar gas chemistry was investigated. The ZnO thin films were deposited on Si substrate using Atomic layer deposition. The etching experiments were performed by inductively coupled plasma system. The maximum etch rate was104.5 nm/min and the highest selectivity of ZnO over$SiO_2$ was 3.3. Etching rate was measured by surface profiler. And the chemical reaction on the surface of the etched ZnO thin films was investigated by x-ray photo electrons pectroscopy. As a result of XPS,$Zn2p_{3/2}$ peak shifted toward a higher binding energy and the O-O and N-O bond were obtained from the sample of ZnO thin film which after plasma treatment. -
The etching characteristics with etch rate of ITO thin films in an
$O_2/BCl_3$ /Ar plasma were investigated. The etch rate of ITO thin films increased with increasing$O_2$ content from 0 to 10 % in$BCl_3$ /Ar plasma, whereas that of ITO decreased with increasing$O_2$ content from 10 % to 30 % in$BCl_3$ /Ar plasma. The maximum etch rate of 65.9 nm/min for the ITO thin films was obtained at 10 %$O_2$ addition. The etch conditions were the RF power of 500 W, bias power of 200 W, and process pressure of 2 Pa. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of ITO thin films and etch species. -
OLED(Organic Light Emitting Device)는 LCD(Liquid Crystal Display)의 뒤를 잇는 차세대 디스플레이의 선두주자로서 자체발광형이기 때문에 백라이트 등의 보조광원이 불필요하며, 구동전압이 낮고 넓은 시야각과 빠른 응답속도 등의 특징을 가지고 있다. 또한 플렉서블 기판을 사용할 수 있어 차세대 디스플레이인 플렉서블 디스플레이에 적합하다. 플렉서블한 디스플레이를 만들기 위해서 플라스틱 기판에 OLED 물질을 사용하여 기존에 무겁고, 깨지기 쉬우며, 변형이 불가능한 유리로 만든 소자 보다 더 가볍고 깨지지 않고 변형이 가능한 플렉서블 디스플레이를 제작 할 수 있다. 그러나 플라스틱 기판은 매우 큰 투습율을 가지고 있어 OLED소자에 적용시키면 공기 중의 수분이나 산소와 접촉이 많아져 쉽게 산화되어 소자의 효율 및 수명이 짧아진다. 또한 OLED에 사용되는 유기물도 산소나 수분에 의해 특성이 급격히 저하되기 때문에 산소 및 수분의 차단은 필수적이다. 이러한 단점을 최소화하기 위해서 PECVD(Plasma Enhanced Chemical Vapor Deposition)로 만든 SiON(Silicon Oxynitride),
$SiO_2$ (Sillicon dioxide),$Si_3N_4$ (Sillicon nitride) 박막을 차단막(Passivation layer)으로 사용하였다. PECVD(Plasma Enhanced Chemical Vapor Deposition)로 만든 SiON(Silicon Oxynitride),$SiO_2$ (Sillicon dioxide),$Si_3N_4$ (Sillicon nitride) 각각의 박막의 Crack의 특성을 85%-$85^{\circ}C$ 조건에서 24hr 측정하였다. -
Kim, Jin-Hyeok;Sin, Gwang-Su;Kim, Seon-Hun;Go, Hang-Ju;Kim, Hyo-Jin;Song, Min-Jong;Han, Myeong-Su 177
본 연구에서는 반도체용 Si wafer에 마스크 공정 및 slit etching 공정을 적용하여 목표인 30um 이하의 Probe unit을 개발하기 위해 Deep Si Etching(DRIE) 장비를 이용하여 식각 공정에 따른 특성을 평가하였다. 마스크는 Probe block 조립에 적합한 패턴으로 설계 하였으며, slit의 에칭된 지점에 pin이 삽입될 수 있도록 그 폭을 최소한으로 설계하였다. 30um pitch와 20um pitch의 마스크를 각각 설계하여 포토공정에 의해 마스크패턴을 제작하였으며, 식각공정 결과 식각율 5um/min, profile angle$89^{\circ}{\pm}1^{\circ}$ 로 400um wafer의 양면관통 식각을 확인하였으며, 표면 및 단면 식각특성을 조사하였다. -
칼코게나이드계 재료를 사용한 비냉각 적외선 센서의 윈도우를 제작하여 그 특성을 조사하였다. 조성을 EDS로 분석한 결과 Ge-Se-Sb로 구성되어 있음을 확인하였다. 두께 2mm인 윈도우 모재를 양면 경연마한 후 코팅 설계치로 8-12um 영역에서 평균 투과도가 95.6%로 나타났다. 이온빔보조증착장치를 이용하여 Ge, ZnS,
$YF_3$ 소스로 코팅한 결과 투과도는 동일파장영역에서 약 94%로 나타났다. 칼코게나이드 원재료의 투과도는 약 69%로써 12um 영역 부근에서 강한흡수를 보였다. 코팅면의 거칠기 값(Ra)은 약 1.5 nm로써 매우 매끄러운 면을 얻었으며, 단면 SEM 측정 결과 설계치와 유사한 박막 두께를 얻었다. -
본 연구에서는 무안경식 3 차원 입체영상 기술에 쓰이는 렌티큘러 렌즈의 제작공정 중 오차(Error)로 작용할 수 있는 몇 가지 변수를 가정하였고 이러한 변수의 오차에 의해 좌우되는 가장 중요한 성능인자인 광학적 상호간섭 (Cross-Talk)을 최소화하도록 연구를 수행하였다. 이를 위해서 초정밀절삭가공과 UV경화법을 사용하였고 광학적 상호간섭 (Cross-Talk)에 가장 큰 영향을 주는 피치공차 (Allowance)를
${\pm}0.5{\mu}m$ 내로 줄여서 3차원 입체감을 향상시킬 수 있음을 확인하였다. -
Jeong, Tae-Jeong;Choi, Gyu-Chae;Chung, Kook-Chae;Kim, Young-Kuk;Cho, Young-Sang;Choi, Chul-Jin 180
본 연구에서는 P-Type의 NiO를 Glass기판의 ITO전극위에 RF-스퍼터링 방법으로 증착하였으며, NiO 완충층의 두께 변화에 따른 OLED (Organic Light Emitting Diode) 소자의 발광 특성에 대해 연구하였다[1, 2]. NiO는 우수한 전기 광학적 특성을 가지고 있어 OLED소자의 구동전압, 발광 효율 등의 특성을 향상 시킬 수 있다[3]. NiO 완충층의 두께 변화는 스퍼터링 증착시간을 통해 5-20 nm로 조절하였으며 소자의 구조는 Glass/ITO/NiO(0~20nm)/NPB(40nm)/Alq3(60nm)/LiF(0.5nm)/Al(120nm)형태로 제작하였다. ITO/NPB 계면에 NiO 완충층을 삽입함으로써 OLED 발광소자의 구동전압을 ~8V에서 ~5V (NiO, 10nm)로 낮출 수 있었다. -
Few-walled carbon nanotubes (FWNTs)-based field emitters with long term stability are fabricated by using a spray method. Tetraethylorthosilicate (TEOS) sol as a binder was mixed with dispersed solution of FWNTs to enhance the adhesion of FWNTs on the cathode substrate. Due to the strong intermolecular interaction of TEOS to the functional groups attached on CNTs and substrate, CNTs are tightly adhered to the cathode electrode when heat treatment is performed at
$150^{\circ}C$ for 1 hour, resulting in a stable electron emission of CNT emitters for long time. Excellent field emission characteristics were exhibited, with a large field enhancement factor and low turn-on voltage, comparable to those of CNT emitters fabricated by a screen printing of CNT paste. Therefore, FWNTs / TEOS hybrid films could be utilized as an alternative for the efficient and reliable field emitters. -
The behavior of properties of ion exchanged substrate glasses was investigated in this study. In order to study the effects of ion exchange, ion exchange behavior with ion penetration depth, amount of ion exchange, density and thermal expansion was measured according to the time and temperature. The mechanical properties were evaluated by the three point bending test and curvature change, and then fracture patterns were investigated by optical microscope.
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3D Display type have software and hardware architecture in generally got low transmittance characteristics and high price product equipment. In this article, specified polarizer adopted MLA type structure have 3D display with hardware configuration and high transmission wide view angle. Method of screen printing type is adopted B/L system with simple structure.
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ITO의 전극 패턴에 따른 유기 광기전력 소자의 전기적 특성에 대해서 연구하였다. 소자의 구조는 ITO/PEDOT:PSS(90nm)/CuPc(20nm)/
$C_{60}$ (40nm)/LiF(0.5nm)/Al(100nm)이고, PEDOT:PSS는 스핀 코팅한 후$120^{\circ}C$ 에서 20분간 건조시켰으며, 유기물은 열증착을 하여 제작하였다. ITO 전극의 패턴을 corss-bar type과 island type으로 하여 소자의 특성을 비교하였다. 광원은 500W xenon lamp를 사용하였고, optical density filter로 광원의 세기를 조절하였으며, AM 1.5G의 스펙트럼을 조사하였다. PEDOT:PSS 층을 사용함으로서 유기 광기전력 소자의 효율, 단락 전류, 그리고 개방 전압의 향상을 얻을 수 있었다. ITO 전극 패턴에 따른 광기전력 소자의 특성은 cross-bar type에 비하여 island type의 구조에서 유기 광기전력 소자의 효율이 34% 감소하였다. -
유기 발광 소자에서
$Li_2CO_3$ 를 전자 주입층으로 사용하여 전류, 전압, 휘도 그리고 수명을 살펴 보았다. 전자 주입층을 사용함으로써 음전극과 전자 수송층 사이의 전자 주입의 에너지 장벽을 낮출 수 있다. 전자 주입층에 Ca, Mg, Li 등과 같은 낮은 일 함수의 금속을 사용하면, 음전극과 유기물층 사이의 효과적인 전자 주입을 도울 수 있다. 소자의 구조는ITO/TPD(40nm)/$Alq_3$ (60nm)/$Li_2CO_3$ (xnm)/Al(100nm)으로 하였으며,$Li_2CO_3$ 의 두께를 0.1, 0.2, 0.3, 0.5, 0.7, 0.9, 1.2, l.5nm로 변화시켜 소자를 제작하였다.$Li_2CO_3$ 의 박막 두께가 0.3nm일 때, 전자 주입층을 사용하지 않은 소자에 비하여 효율은 2.4배 증가하였고, 구동전압은 0.75V 낮아졌다. -
The crack behavior in the ceramic Nd:YAG at a laser-diode end-pumped Nd:YAG ceramic laser was investigated. The fracture critical temperature difference of the ceramic Nd:YAG is about
$355^{\circ}C$ . The fracture of the 2 at% and the 4 at.% ceramic Nd:YAG occurred more than 14.9 W and 6.9 W pump powers, respectively, under lasing conditions. -
현대의 전기전자 기술의 발전속도가 급격히 빨라짐에 따라서 디지털 전자기기는 많은 데이터와 빠른 전송속도가 요구되어지고 있으며 이로 인해 예상치 못한 고주파 노이즈 신호의 문제가 심각해지고 있다. 최근 디지털 전자기기 중 디스플레이 표시장치에서 구동전압 인가 시 발생하는 근역장 방사노이즈가 문제가 되고 있고, 정전용량방식 (Capacitive Overlay)Touch Pannel에서 터치 시 오작동을 일으키는 EL 면광원의 EMI(Electro-Magnetic Interference, 전자방해)가 본 연구에서 해결하고자 하는 문제이다. EL 면광원의 구동전압이 증가함에 따라서 Touch Panel에 인가되는 근역장 방사노이즈의 세기를 측정하였고 근역장 방사노이즈를 감쇄할 수 있는 Flexible한 자성복합시트에 대해서 연구하였다. EL Display Pannel에 Flexible한 자성 복합시트를 채용하여 Flexible Display 장비의 근역장 방사노이즈 감쇄에 효과가 있음을 확인하였다.
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Recently, there has been increased incessantly an interest in research area on energy material for electronic and electric energy generation applications. The proposed material takes an unobtrusive operation into the simple displacing mechanism using chemical impact material. However, this material makes up a radical design, based on the operation of the stoichiometry ratio on the material architecture.
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The Improved flux-lock type superconducting fault current limiter(SFCL) is composed of a series transformer and superconducting unit of the YBCO coated conductor. The primary and secondary coils in the transformer were wound in series each other through an iron core and the YBCO coated conductor was connected with secondary coil in parallel. In a normal condition, the flux generated from a primary coil is cancelled out by its structure and the zero resistance of the YBCO thin films. When a fault occurs, the resistance of the YBCO coated conductor was generated and the fault current was limited by the SFCL. In this paper, we investigated the fault current limiting characteristics through the spot at the beginning of the fault current in the Improved flux-lock type SFCL. The experiment results that the fault current limiting characteristics was difference according to the point of a fault current started. Through the analysis, it was shown that shorter the time of a phase transition.
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Du, Ho-Ik;Kim, Yong-Jin;Lee, Dong-Hyeok;Han, Byoung-Sung;Song, Sang-Seob;Lee, Jeong-Su;Han, Sang-Chul;Lee, Jung-Phil 190
The resistance and recovery properties of the YBCO thin-film wire according to the existence and thickness of an insulting layer, and the kinds of stabilization layers, were analyzed at 90 K, 180 K and 250 K. In this study, YBCO thin-film wires with different stabilizing layers and with insulating layers were examined in terms of their various characteristics, such as quenching occurrence, spread, and distribution, based on their resistance increase trends and their recovery from quenching, and the results were qualitatively explained. The results of this study on the characteristics of YBCO thin-film wires' superconducting and normal-conducting phase changes are expected to be useful in designing superconducting power machines and in improving their performance. -
초전도 전력 기기를 안정적으로 운용하기 위해서는 고자장하에서 높은 임계 전류 밀도(
$J_c$ )를 지닌 초전도체 개발이 필수적이다. 최근 고자기장에서 전기적 특성을 향상시키는 방법으로는 YBCO 박막선재에 인위적 피닝센터로 고자장하에서도$J_c$ 가 크게 증가 되었다고 보고되고 있다. 본 연구에서는 STO(100) 기판 위에 SAM 방법을 이용하여 금 나노분말을 분산시킨 후 PLD로 YBCO 박막을 증착하여 미세구조와 전기적인 특성을 분석하였다. 분산된 금 나노분말은 열처리전 나노입자의 높이는 29~32 nm, 지름은 41~49 nm툴 나타내었고$800^{\circ}C$ 에서 진공 열처리 후에는 높이는 25~30 nm, 지름은 52~60 nm로 변형되었다. 임계온도는 순수 YBCO에서 85 K을 나타냈지만 금 나노입자를 적용한 YBCO의 경우는 80K으로 낮아진 것을 확인하였다. 임계전류밀도는 4T에서 측정된 경우 65 K에서는 순수한 YBCO는 141 KA/$cm^2$ 에서 금 나노입자가 형성된 기판에 증착한 YBCO는 42 KA/$cm^2$ 로 낮아졌다. -
Cho, Jeon-Wook;Sim, Ki-Duck;Kim, Seok-Ho;Lee, Su-Kil;Jang, Hyun-Man;Choi, Chang-Yeol;Lee, Kuen-Tae;Yang, Byeung-Mo;Kim, Seung-Rae 192
DAPAS (Development of Advanced Power system by Applied Superconductivity technologies) program that the, superconductivity national program has been started one of the 21C frontier programs from 2001 in Korea. The 3rd phase of DAPAS program was started at April 2007, and the ultimate goal of HTS cable project is to develop 154kV, 1GVA class HTS cable. The structure of 154kV, 1GVA HTS cable is single core with cold dielectric insulation. The cable core consists of the former, conduction layer, electrical insulation layer, shielding layer. The cable cryostat consists of two corrugated seamless aluminum tubes as its high sealing reliability, the tubes separated through a spacer arrangement. Outdoor termination was developed by LS cable and cryogenic system by CVE for 154kV, 1GVA class HTS cable. The 154kV, 1GVA HTS cable will be installed and be tested in KEPCO Gochang Testing Center from June 2010. -
Magnetic separation is expected to be applied for material refinement as an important supporting technology. In the superconducting magnetic separation, the cohesive force between particles is strong compared with that in the other magnetic separation. The use of high magnetic field by the superconducting magnet enhances the magnetic substance capture ability of the magnetic separation. Industrial raw materials was used for the superconducting magnetic separation. Cry-cooled, NB-Ti superconducting magnet with. 100 mm room temperature bore and 600 mm of height was used for magnetic separator.
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고온초전도체를 이용한 한류기에서 초전도 선재는 한류기 전체 특성에 많은 영향을 미친다. 따라서 초전도 개발에 있어서 초전도 선재의 성능향상을 위한 연구가 많은 비중을 차지하고 있다. 본 논문에서는 AMSC 344 Conductor 선재를 이용한 전류의 균등분류를 위한 병렬연결 방안에 대해 연구 하였으며 그 결과를 나타 내었다.
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본 연구에서 제작한 u-bolometer 은 적외선을 흡수하는 멤브레인이 a-Si 위에 Ti 메탈로 이루어져 있다. 이 u-bolometer 는 MEMS 센서로써 3차원 공진 구조를 제작하기 위해서는 희생층을 제거하는 공정이 필수적이며 이 희생 층으로 Polyimide를 사용하고 있는 공정에서 Plasma Ashing 공정은 더욱더 필수적이다. 이 Ashing 공정은 O2 플라즈마를 이용하며 이때 흡수물질인 Ti 레이어가 플라즈마에 의해 면저항과 흡수율의 특성이 어떻게 변화되는지 플라즈마 공정 전후를 분석한 결과 면저항의 변화가 나타났으며 uniformity도 높게 변화하였다. 또한 적외선 흡수율이 약 5% 차이가 나타나는 것을 확인 할 수 있었다.
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In this work, we deposited SWNTs/silane hybrid thin films by multiple spray-coating on glass substrate, and examined their electrical response for humidity. Generally silane binders which are often used in CNT solution to adhere CNTs to substrate well can be easily functionalized to each own group on the surface of CNTs after they are hardened by way of the hydrolysis reaction. We investigated how silane binders (TEOS,, MTMS and VTMS) in SWNTs hybrid thin films make effect to their electrical response on humidity. As the result, we observed that the resistance in the sample using TEOS was changed dramatically while it was almost invariant in the samples using MTMS and VTMS for increasing humidity.
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Kim, Dae-Young;Nam, Sung-Pill;Noh, Hyun-Ji;Jo, Seo-Hyeon;Lee, Tae-Ho;Lee, Sung-Gap;Lee, Young-Hi 197
Pb(Zr,Ti)O3/BiFeO3/(PZT/BFO) multilayer thin films were coated on Pt/Ti/SiO2/Si substrates by chemical solution deposition. With increasing the annealing temperature, the dielectric and leakage current density properties of multilayered PZT/BFO/PZT thin films were improved. The current density of the PZT/BFO/PZT filmannealing at$600^{\circ}C$ was about 189.39(x10-9A/cm2) at 10V. The relative dielectric constant and the dielectric loss of the PZT/BFO/PZT thin film annealing at$600^{\circ}C$ were about 318 and 0.161%, respectively. -
The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-ramp in the range from 190nm to 2100nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.
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A back-gated MOSFET on silicon-on-insulator (SOI) substrate for pH sensor was investigated. We used concentrations of pH solution from 6 to 9. The fabricated back-gated MOSFET has current difference and threshold voltage shift by pH concentrations. Therefore, It can be used to simplification of conventional pH sensor.
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열영상의 해상도 증가 시 야기되는 감도저하를 해결하고자 단위 픽셀의 크기를 줄이고 필팩터 향상을 위한 2앵커, 4앵커 구조를 제안하고 앵커 구조에서 Leg 구성물질의 두께변화에 따른 온도 변화 및 열전도도 특성을 실험을 통해 최적화 된 열영상을 구현한다.
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볼로미터 제작 공정 중 One step via 공정 시 via hole 모양에 의해 정기적 연결 및 구조적 안정성에 문제를 해결하기 위하여 다른 via 식각 방식으로 공정을 진행하였으며 그에 따른 via 공정 차이에 대한 결과를 연구하였다.
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This study focused on the characteristics of single crystal solar cell using the impedance technique. In this experiment, the impedance was measured according to frequency's from 1mHz until 2MHz. The solar cell is R-L-C series circuit. Capacitance reactance was changed according to changing from low frequency to high frequency. It could know that the impedance was changed according to the frequency increases in solar cell.
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The proton exchange membrane fuel cell (PEMFC) is different from the normal power supply, and it is a nonlinear, multi-input, strong coupling, the complex dynamic system with large time delay. At present, many studies on the content of the fuel cell fuel cells focus on a static process, this paper analyzed in subsequent sections of the process of fuel cell dynamic response time of transition, and then it found the method to reduce the response time during the process of load change to ensure that the stability of output power.
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A development of device with reduced size and improved sensitivity is highly impotant Pb(Zr,Ti)
$O_3$ thin films are widely used both to make actuator and sensor due to their high sensitivity and low cost. In this study, the feasibility of a piezoelectric presssure sensors based on hybrid low-temperaute co-fired ceramic (LTCC) technology were presented. The LTCC diaphragms with thickness of$400\;{\mu}m$ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. PZT thin films were successfully prepared on between top and bottom Au electrode with LTCC substrates using RF magnetron sputtering. In addition, The frequency response characteristics of the sensor under varing pressure has been analysed. by Network Analyser (HP-8722D). A frequency shift range has been obseved from 1.7GHz to 1.8GHz with a good linearity for applied pressure from 0 psi up to 25 psi. -
Recently, low temperature co-fired ceramic (LTCC) technology is widely used in sensors, actuators and microsystem fields because of its very good electrical and mechanical properties, high stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of on
$O_2$ annealing treatment on the electrical properties of Pb(ZrTi)$O_3$ (PZT) thin films deposited on LTCC substrate. The LTCC substrates with thickness of$400\;{\mu}m$ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Au / LTCC substrates by RF magnetron sputtering method. The change of the crystallization of the films were investigated under various atmosphere. The structural variation of the films were analyzed by using X-Ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) and secondary ion mass spectrometry (SIMS). -
본 연구에서는 신경망을 이용하여 SiN 박막의 특성을 예측하는 모델을 개발하였다. 신경망으로는 일반화된 회귀 신경망 (generalized regression neural network-GRNN)을 이용하였고, GRNN 모델의 예측수행은 유전자 알고리즘 (genetic algorithm-GA)을 이용하여 최적화 하였다. 개발된 모델을 이용하여 증착률과 굴절률 및 균일도를 공정변수의 함수로 예측하였다.
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알루미늄 양극산화 기술은 저가로 공정이 가능하고, 경제적이며 규칙적인 배열의 나노 미터 크기의 미세기공을 형성할 수 있다는 장점을 가지고 있다. 인가전압, 양극산화 용액의 종류, 용액의 농도 및 온도 등의 양극산화 조건을 변화시킴에 따라 나노 기공의 직경 및 길이, 밀도 조절이 용이하다. 알루미늄 판 (aluminum plate)을 이용한 양극산화 기술은 상대적으로 많이 알려져 있으나 알루미늄 박막을 이용한 양극산화기술은 아직도 확립되어 있지 않다. 본 실험에서는 실리콘 기판에 Al을
$5000{\AA}$ 와$8000{\AA}$ 으로 증착시켜서 기판으로 이용하였다. 아주 얇은 두께의 Al은 작은 변화에도 민감하게 반응하기 때문에 공정 변수인 온도와 전압의 정밀한 제어가 되어야 나노 기공의 크기 조절이 가능한 것을 확인하였다. -
Indium zinc tin oxide (IZTO) thin films were studied as a possible alternative to indium tin oxide (ITO) films for providing low-cost transparent conducting oxide (TCO) for thin film photovoltaic devices. IZTO films were deposited onto glass substrates at room temperature. A dc/rf magnetron co-sputtering system equipped with a ceramic target of the same composition was used to deposit TCO films. Earlier studies showed that the resistivity value of
$In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20) films could be lowered to approximately$6{\times}10^{-4}ohm{\cdot}cm$ without sacrificing optical transparency and still maintaining amorphous structure through the optimization of process variables. The growth rate was kept at about 8 nm/min while the oxygen-to-argon pressure ratio varied from 0% to 7.5%. As-deposited films were always amorphous and showed strong oxygen pressure dependence of electrical resistivity and electron concentration values. Influence of forming gas anneal (FGA) at medium temperatures was also studied and proven effective in improving electrical properties. In this study, the chemical composition of the targets and the films varied around the$In_{0.6}Zn_{0.2}Sn_{0.2}O_{1.5}$ (IZTO20). It was the main objective of this paper to investigate how off-stoichiometry affected TCO characteristics including electrical resistivity and optical transmission. In addition to the composition effect, we have also studied how film properties changed with processing variables. IZTO thin films have shown their potential as a possible alternative to ITO thin films, in such way that they could be adopted in some applications where currently ITO and IZO thin films are being used. Our experimental results are compared to those obtained for commercial ITO thin films from solar cell application view point. -
Multiferroic properties of
$BaTiO_3-CuFe_2O_4$ thin films grown on highly-textured Pt(111)/$TiO_2/SiO_2$ /Si(100) substrates were studied.$CuFe_2O_4$ ceramic target was synthesized by mixing oxide powders of CuO,$Fe_2O_03$ ,$BaTiO_3$ ceramic target was also prepared separately. The film structure was of bi-layer type, where$BaTiO_3$ layer lies underneath of$CuFe_2O_4$ layer, where both layers were grown by pulsed laser deposition technique. We will report the ferroelectric and magnetic properties of$BaTiO_3-CuFe_2O_4$ bi-layer films in some detail. -
에너지 하베스트 기술은 자연의 빛에너지, 휴대용 기기 탑재/부착장치의 미세 진동에너지, 걷거나 뛰는 인간의 신체활동으로 인한 소산에너지 등을 흡수하여 전기에너지로 변환, 전자기기의 전력으로 사용하는 재생형 에너지원이다. 본 논문에서는 그 중 주변 환경에서 에너지를 끌어 쓸 수 있는 기술 중 압전 효과 방식을 이용한 진동 형태의 에너지 하베스트 기술을 활용하여 설계하고 FEM simulation을 통해 분석해보았다. 압전 물질로는 PZT를 사용하고 메탈기반의 캔틸레버로는 구리를 사용하여 크기를 길이, 넓이, 폭 각각
$6{\times}4{\times}0.025mm^3$ 으로 모델링하여 444Hz의 공진주파수에서 응력이$2.68e^{+5}Pa$ 발생하는 결과를 얻었다. 그 결과$d_{33}$ 모드의 전극형태에서 전압을 2.56V 얻을 수 있음을 추론할 수 있었다. -
본 논문에서는 ZnO 박막을 휘어지기 쉬운 PES(polyethersulfone) 기판위에 PLD(pusled laser deposition)법을 사용하여 다양한 조건에서 성장시켰다. 성장된 ZnO 박막의 표면 형상과 광특성을 SEM과 PL을 사용하여 측정하였고, 레이저 밀도 0.3 J/
$cm^2$ , 기판 온도$200^{\circ}C$ 에서 가장 좋은 광특성을 보였다. -
Recently, lithium transition metal phosphates with an ordered olivine-type structure,
$LiMPO_4$ (M=Fe, Mn, Ni, and Co), have attracted extensive attention due to a high theoretical specific capacity (170 mAh/g). The$LiMPO_4$ is the most attractive because of its high stability, low cost, high compatibility with environment. However, it is difficult to attain its full capacity because its electronic conductivity is very low, and diffusion of Li-ion in the olivine structure is slow and the supervalue cation doping was used. In this research, we are used the supervalue cation doping methode such as Cu, Ti, and Mg were partially replace the Fe. The cycling performance resulted of the used$LiM_xFe_{1_x}PO_4$ cathode materials for lithium batteries exhibit excellent high capacity than$LiFePO_4$ /Li cells. -
In this thesis, we studied to increased to solar conversion efficiency of DSSC (dye-sensitized solar cell) using nanocrystalline
$TiO_2$ semiconductor. We are preparation of$TiO_2$ photoelectrode, assembly the DSSC and put a focus in analyses electrochemical properties of DSSC and using Silica powder in$TiO_2$ photoelectrode for increase light scattering effect and improved conversion efficiency. It attempt to investigate the morphology of the photoelectrode and photovoltaic effects using field emission scanning electron microscopy (FE-SEM) and photovoltaic properties under illumination with AM 1.5 simulated sunlight. We got 146 % enhanced power conversion efficiency when the optimal content of quartz glass powder was 5 wt.% than that another content. -
The 0.65Pb(
$Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with$La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on$CeO_2$ /YSZ/Si(001), Pt/$TiO_2$ /Si and$SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of$550^{\circ}C$ . Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and$CeO_2$ /YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$ /Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and$4.4{\mu}C/cm^2$ on$CeO_2$ /YSZ/Si, Pt/TiO2/Si and STO substrates respectively. -
The feasibility of InSbTe (IST) chalcogenide materials prepared by metalorganic chemical vapor deposition (MOCVD) for phase-change memory (PRAM) applications was demonstrated. Films grown below
$225^{\circ}C$ exhibited an amorphous structure, and the films grown at$300^{\circ}C$ Cincluded various crystalline phases such as In-Sb-Te, In-Sb, In-Te, and Sb-Te. The composition of the amorphous films grown at$225^{\circ}C$ was dependent on the working pressure. Films grown at$225^{\circ}C$ exhibited a smooth morphology with a root mean square(rms) roughness of less than 1nm, and the step-coverage of the films grown on a trench structure with an aspect ratio of 5:1 was greater than 90%. An increase in deposition time increased the filling rate, while retaining the conformal step-coverage. Films grown at$225^{\circ}C$ for 3h in a working pressure of$13{\times}10^2$ Pa exhibited a reproducible and complete filling in a trench structure. -
ITO는 n- type 반도체 재료로 Sn의 첨가로 인한 매우 낮은 전기저항과 안정성때문에 널리 사용되고 있는 재료이며 비교적 높은 band gap(3.55Ev)를 가짐으로 인하여 가시광선 영역에서 높은 투과도를 가지는 특징이 있다. 단점으로는 박막 제조 시에 증착시간의 증가함에 따라 음이온 충격 및 온도 상공으로 인한 막의 표면손상이 발생하게 되고 이것은 전기저항이 증가하는 요인으로 작용하는 문제점이 있다. 본 연구에서는 3가지 조성의 ITO박막을 스퍼터 장치를 이용하여 증착하고 그에 따른 전기적, 구조적, 광학적 특성을 분석 하였다. 증착된 ITO성막의 표면분석을 위해 AFM (Atomic Force Microscope)으로 표면 거칠기값 분석, XRD (X-ray diffraction)을 이용 결정성장분석, SEM (Scanning Electron Microscope)으로 표면의 미세구조관찰, 4Point pobe로 면 저항분석, spectrophotometer로 박막의 투과율과 흡수율을 분석하였다. 조성변화와 공정변수에 따른 전기적, 구조적, 광학적 특성변화의 원인분석으로 고효율의 ITO 박막성장 가능성을 조사하였다.
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산화물유전체/금속/산화물유전체(D/M/D) 구조의 투명전극은 우수한 통전성과 투광성을 갖는 동시에 근적외선 및 전자파 차폐가 가능하여 각종 디스플레이 장치로의 응용을 위해 많은 연구가 진행 중이다. 이러한 구조의 다층막의 경우 금속층과 산화물층간 계면에서의 산소확산으로 인한 광학적, 전기적 특성 저하가 문제가 되고 있다. 본 연구에서는 층간 산소확산방지를 통해 다층막의 전기적 특성을 개선하기 위해
$TiO_2$ /Ag/$TiO_2$ ,$TiO_2$ /ZnS/Ag/ZnS/$TiO_2$ 구조의 다층막을 DC/RF 마그네트론 스퍼터를 이용하여 제조하여 ZnS 박막이 다층막의 특성에 미치는 영향을 비교 평가하였다. 제조된 박막의 전기적, 광학적, 계면 특성을 4-point probe, Spctrophotometer, AES을 이용하여 분석하였으며 PDP필터용 전극으로의 적용 가능성을 평가하였다. -
본 연구에서는 투명 전극 대체 물질로써 유망한 ZnO의 전기적 특성 향상을 위하여 IV족 원소인 Si을 1, 3, 5 wt% 첨가하여 SZO 박막을 제작하여 dopant의 앙, 온도 변화에 따른 전기적, 광학적, 구조적 특성을 분석하였다. Rf-magnetron sputtering system을 이용하여 slide glass위에 증착 하였으며
$100{\sim}500^{\circ}C$ 온도 변화를 주었다. 결정성 분석을 위한 XRD 분석 결과 온도 증가에 따라 (002) peak의 세기가 증가하며, Si 첨가량과 관계없이 동일한 2 theta에서 peak가 관측되었다. 미세 구조 분석 결과 입자 크기 또한 온도 증가에 따라 증가함을 확인하였으며, 박막 두께는 대략 300nm로 확인하였다. 모든 SZO 박막은 가시광선 영역에서 80% 이상의 투과율을 보였으며 PL 분석 결과 Si 첨가량과 관계없이 동일한 스펙트럼을 가지며 380 nm, 540 nm 근처에서 peak를 확인하였다. 최소 비저항 값은 5SZO 막에서$2.44{\times}10^{-3}\;{\Omega}cm^{-1}$ 을 보였다. -
In a past, the method in which it used the fluorescent material or it analyzes a gene was used in order to detect the Alzheimer's disease. However, in this paper, the magnetic bead is used in order to detect the Alzheimer's disease. The 'magnetic bead used in this paper is able to make the amyloid-beta and the selective binding known as cause of the Alzheimer's disease.
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The beta-amyloid protein (
$A_{\beta}$ ) is well known for main cause of Alzheimer disease (AD). Generally, detection of$A_{\beta}$ is carried out by using fluorescent material or DNA test, but these process is long time and expensive process. Therefore, in this research, we investigated the simple diagnosis method to detect the$A_{\beta}$ by using photo-transistor. -
수배전반 내부에서 Arc 사고 발생시 동반되는 광신호를 검출할 수 있는 광센서를 개발하였다. 개발된 광센서는 특정 부위에 설치되어 해당 위치에서 발생하는 광신호를 검출하는 Point Sensor와 넓은 범위를 감시할 수 있는 Loop Sensor의 두 가지 형태로 구성되어 있다. 두 가지 모두 광섬유를 통하여 계전기 등에 부착되며, 일반 통신용 광섬유보다 큰 core를 갖는 특수 광섬유가 사용되었다. Point Sensor는 광섬유 끝단에 부착된 Cap에 의해 광신호가 검출되고, Loop Sensor는 광섬유 자체가 Sensor로 사용되어 광신호의 검출 및 전승을 수행한다. Point Sensor에 부착되는 Cap은 보다 넓은 범위 감시하고, 광신호 발생 위치에 따른 편차를 줄일 수 있는 형태로 설계되었다.
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수평성장 방식을 이용하여 다결정 실리콘 리본을 제조하였으며, 제조된 리본의 미세구조 및 결함을 분석하였다. 기존 잉곳 성장 및 절단 공정을 통해 제조된 실리콘 웨이퍼는 절단 중 실리콘의 손살 때문에 단가를 상승 시킨다. 따라서 실리콘 용탕으로부터 직접 웨이퍼를 제조하는 리본 기술이 활발히 연구되고 있다. 본 연구에서는 수명 성장 법을 이용하여 용융 실리콘으로부터 다결정 실리콘 리본을 제조 하였다. 제조 된 리본의 크기
$50{\times}50$ mm였으며 두께는$375{\pm}50{\mu}m$ 이었다. 또한, 미세구조 분석 결과 결정들의 형상이 불규칙적 이었으며, 바닥에서부터 윗부분까지 한 방향으로 성장되었다. 수직성장된 결정들의 평균 입경은$50.2{\mu}m$ 이었다. 전위 (dislocations ), 이중(twins), 그리고 기공 (pores) 같은 구조적 결점들과 SiC, 탄소, 그러고 산소와 같은 불순물 결함 등이 관찰 되었다. 본 연구를 통해 제조된 다결정 실리콘 리본은 태양전지용 웨이퍼로 응용 가능 할 것으로 판단된다. -
태양 전지에 사용되는 실리콘의 전자기 유도 용융 기술은 잉곳(ingot)의 성장 및 금속 정련 등의 핵심 공정인 실리콘 용융에서 사용되는 중요한 기술이다. 하지만, 유도 용융에 사용되는 흑연 도가니에 의한 실리콘의 오염은 실리콘의 순도저하에 요인으로 작용한다. 흑연 도가니와 용융된 실리콘이 접하는 계면에서 탄소의 오염이 발생하게 되며, 실리콘 내부에 흡수한 탄소는 대표적인 비금속 불순물로 태양전지 효율을 감소시킨다. 본 연구에서 사용되는 흑연 도가니는 유도 코일의 전자기력에 의해 실리콘과 무접촉 또는 연접촉이 가능한 구조이다. 또한, 유도 자기장을 이용하여 실리콘과 같은 반도체를 용융할 경우, 고상에서의 낮은 전기전도도로 인해 효과적인 줄-발열(Joule Heating)이 불가능하므로 플라즈마와 같은 보조 열원을 필요로 한다. 본 연구에서는, 보조 열원 없이 세그먼트(segment)된 흑연 도가니를 이용한 실리콘 용융 연구를 진행하였다.
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야금학적 정련은 태양전지 소재인 실리콘의 저가화를 통한 태양전지의 단가를 낮추는데 유망한 공정이다. 이중에서도 실리콘의 전자빔정련은 고순도의 실리콘 정련에 효과적인 기술이다. 본 연구에서는 전자빔용융법을 이용하여 실리콘 정련을 수행하였으며, 제조된 실리콘의 미세구조 및 분순물농도를 측정하였다. 고진공의 챔버 하부에 수냉동도가니가 위치해있고, 상부에 100 kW출력의 전자총이 설치되었다. 실리콘은 분쇄 및 세척과 같은 전처리 없이 수냉동도가니에 250g 이 장입되었다. 전자빔때턴은 소프트웨어를 통한 헌혈, 나선형의 경로(path)와 원형의 형상(Shape)이 결합하여 원형패턴과 나선형패턴의 형상으로 실리콘에 조사되었다. 전자빔의 출력을 15 kW로 실리콘을 용융하였고 분당 0.5 kW의 속도로 서냉하였다. 제조된 실리콘은 지름 100 mm, 높이 25 mm의 버튼형상이었으며, 횡방향으로 절단하여 미세구조와 불순물거동을 분석하였다. 미세구조는 광학현미경 (OM) 과 전자현미경 (SEM)을 통하여 관찰하였고 불순물거동은 유도결합플라즈마 분광분석기(ICP-AES) 을 통하여 분석하였다. 장입된 실리콘의 초기순도는 99.5 %이고, 전자빔정련 공정 후 99.996 %까지 향상되었다. 전자빔패턴을 이용한 고순도 실리콘의 정련은 태양전지 소재 개발에 유망한 기술로 활용될 것이다.
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박막 방식의 CIGS 태양전지는 공정이 복잡하고 대면적화가 어렵다는 단점을 가지고 있다. 이를 개선하기 위하여 후막 방식을 이용한 CIGS 태양전지에 대한 연구의 필요성이 대두되어지고 있다. 스크린 프린팅과 같은 후막공정은 나노 CIGS powder가 필요하다. CIGS 합성 방법 중에 solvothermal 방식이 다른 방식에 비해 균일한 크기의 구형의 나노입자를 대량생산이 쉽기 때문에 많이 연구되어지고 있다. 선행 연구 결과들은 CIS, CIGS 및 CGS는 solvothermal 법으로 합성 시 3개의 상이 모두 합성되며, 합성조건에 따라 상의 조성의 조절이 되지 않는다. 따라서 현재까지 solvothermal 법으로는 단일상의 CIGS 상의 합성이 보고되지 않고 있다. 본 연구에서는, solvothermal 방식을 이용하여 후막공정을 위한 CIGS powder를 합성하였다. 원료, 용매 및 합성 온도 등의 변화에 따른 상의 변화를 측정하였고, 원료의 농도에 따른 powder의 크기 및 형상을 제어 하였다. 또한 CIGS powder를 이용하여 페이스트을 제조한 후, 이 페이스트를 가지고 태양전지를 위한 치밀한 후막을 제조할 수 있었다.
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Effects of
$TiO_2$ electrode paste components on conversion efficiency of dye-sensitized solar cellsThe effects of paste components on the properties of porous$TiO_2$ film electrodes prepared through screen-printing technique were investigated in order to efficiently control and optimize the main fabrication step of the dye-sensitized solar cells (DSC). The screen-printed porous$TiO_2$ films were characterized by ultraviolet-visible (UV-Vis) spectroscopy and scanning electron microscopy (SEM), and applied as a part of the DSC for the energy conversion. The fabricated DSC were evaluated by a solar simulator. The experimental results indicate that the microstructural characteristics of the printed films and the performances of the DSC are dependent on the paste compositions. As a result that the efficiency of DSC prepared by manufactured paste was 0.5%~1% higher than existing paste. -
The intercalation chemistry of graphite presents an attractive route to obtain few-layered graphene platelets based on the expanded interlayer spacing. We report that the lithium can be intercalated into the graphite in a controllable manner by adjusting the variables such as temperature, pressure, and reaction time. From the X-ray diffraction experiments, the lithium-graphite intercalaltion compounds (Li-GICs) can be produced as the first stage compounds (
$LiC_6$ ), the second-stage compounds ($LiC_{12}$ ), and the mixtures, which is most likely to be dependent on the temperature and reaction time. Since these Li-GICs are expected to facilitate the exfoliation of graphite, we investigated the feasibility of Li-GICs as a effective precursors for the generation of single-or few-layered graphite nano-platelets. -
본 연구에서는 공진주파수 수식을 이용한 MATLAB과 Modal 해석법을 사용한 ANSYS로 공진주파수 특성을 시뮬레이션 하였다. 외팔보의 시뮬레이션 결과에서는 길이가 길어짐에 따라, 또는 proof mass의 크기가 커짐에따라 공진주파수 특성이 낮아지는 결과가 나타났다. 따라서 본 실험에서의 외팔보는 낮은 공진 주파수를 가지기 위해 Si proof mass를 사용하여 제작하였다. 외팔보 소자는 Silicon-on-insulator wafer를 사용하여 SiO2/Ti/Pt/PZT/Pt 박막을 증착하였고, 마스크를 사용한 식각 공정으로 제작하였다. 이때의 MATLAB, ANSYS 시뮬레이션 결과와 실험에서 제작된 소자는 유사한 공진주파수 특성을 나타내었다.
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Yang, Hyeon-Hyn;Back, Su-Ung;Kim, Han-Wool;Han, Chang-Jun;Na, Kil-Ju;Lee, Suk-Ho;So, Soon-Youl;Park, Gye-Choon;Lee, Jin;Chung, Hae-Deok 229
본 실험에서는$CuInSe_2$ , 3원물질을 화학량론적 조성비가 되도록 박막을 제조하기 위해 각 단위원소를 원자비에 맞춰 전자선가열 진공증착기를 사용하여 Cu, In, Se 순으로 증착하였다.$10^{-3}$ torr 이상의 진공석영관에서 열처리와 동시에 Selenization을 통해 제작된$CuInSe_2$ 박막은 열처리온도$250^{\circ}C$ 에서는$Cu_xSe$ , CuSe등의 2차상들이 나타나다가$450^{\circ}C$ 이상의 고온에서$CuInSe_2$ 단일상을 형성하였다. 이로부터 진공중에서 반응을 시켰을 때, 더 낮은 온도에서 반응이 일어나고 열역학적으로 보다 안정한 소수의 화합물들이 쉽게 형성됨을 확인할 수 있었다. 특히$250^{\circ}C$ 에서는 Sphalerite 구조를 가지다가$350^{\circ}C$ 이상의 온도에서 Selenization하였을 때 Chalcopyrite 구조를 가졌다. 박막이 두꺼워지면서 결정립의 크기가 커지고 응력이 작아지는 특성을 보였다. 에너지 밴드갭은($E_g$ )은 Cu/In 성분비율이 클수록 작은값을 보였으며, 결절립크기가 증대되므로 결국 흡수계수가 낮아짐을 알 수 있다. 또한 두께가 증가할수록 전반적으로 흡수계수가 증가하였고 Cu/In의 성분비율이 0.97일 때 기초흡수파장은 1,169nm이고 에너지밴드갭은 1.06eV이었으며, 두께$1.5{\mu}m$ 이상일 때 전반적으로 양호한 상태의 p-type$CuInSe_2$ 박막을 제작 하였다. -
본 연구에서는 개조된 MOCVD법을 이용하여 (100) GaAs 기판 위에 나노 구조
$Bi_2Te_3$ 열전 필름을 성장시켰다. 기존의 MOCVD법과 달리 서셉터의 모양을 변화시켜 기체상태에서$Bi_2Te_3$ 나노파티클의 형성과 기판위에서 성장을 유도 하였다. 또한 서셉터의 노즐의 면적을 변화시켜 기체의 속도를 제어함에 따라$Bi_2Te_3$ 필름을 형성시켰다. 서셉터의 모양의 변화에 따라 기체 상태에서$Bi_2Te_3$ 나노파티클을 형성하고 이를 기판위에서 성장시켜$Bi_2Te_3$ 열전 필름의 결정립계를 조절할 수 있었고, 또한 노즐의 면적의 변화에 따른 기체의 속도를 제어하여$Bi_2Te_3$ 결정립계 및 결정 배향 방향을 조절 하였다. 본 연구결과에서는 MOCVD 반응관의 서셉터의 모양 및 노즐의 면적의 변화에 따라 결정립계 및 결정 성장방향이 조절될 수 있음을 확인하였고 이러한 변화에 따라 열전도도를 제어하여 열전성능지수의 향상을 기대 할 수 있다. -
Kim, Hyo-Jung;Kim, Kwang-Chon;Choi, Won-Chel;Jung, Kyoo-Ho;Kim, Hyun-Jae;Park, Chan;Kim, Jin-Sang 231
Thermoelectric properties of a multi-layered thin film, which was composed with indium selenide and bismuth telluride, were investigated. The structure of the layered thin film is Bi-Te /In-Se/Bi-Te and it was prepared on sapphire substrate by RF magnetron sputter using stoichiometric$Bi_2Te_3$ (99.9%) and$In_2Se_3$ (99.99%) target at room temperature. Then, it was annealed at temperature range of 150 -$500^{\circ}C$ in Ar ambient. Structural characterizations were done using X-ray diffraction(XRD, BRUKER, D8, 60kW) and transmission electron microscopy (TEM, FEI, Tecnai, F30 S-Twin), respectively. Cross-section of multi-layer structure was observed by Scanning electron microscopy (SEM). The resistivity and Seebeck coefficient of these samples were also measured by conventional equipment at room temperature. The maximum value of power factor was$1.16\;{\mu}W/k^2m$ at annealing temperature of$400^{\circ}C$ . -
Simulation Program (AFORS-HET 2.4.1) was used, include the basic structure of crystalline silicon thin film as above, under the intrinsic a-Si:H films bonded symmetrical structure (Symmetrical structure) were used. The structure of ITO, a-Si p-type, intrinsic a-Si, c-Si, intrinsic a-Si, a-Si n-type, metal (Al) layer has one of the seven. When thickness for each layer was given the change, the changes of a-Si p-type layer and the intrinsic a-Si layer on top had an impact on efficiency. Efficiency ratio of p-type a-Si:H layer thickness was sensitive to, especially a-Si: H layer thickness is increased in a rapid decrease in Jsc and FF, and efficiency was also decreased.
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It is important to form the n+ emitter layer for generating electric potential collecting EHP(Electron-Hole Pair). In this paper the formation on the n+ emitter layer of silicon wafer has been made with respect to uniformity of shallow diffusion from a liquid source. The starting material was crystalline silicon wafers of resistivity
$0.5{\sim}3\{Omega}{\cdot}cm$ , p-type, thickness$200{\mu}m$ , direction[100]. The formation of n+ emitter layer from the liquid$POCl_3$ source was carried out for$890^{\circ}C$ in an ambient of$N_2:O_2$ ::10:1 by volume. And than each conditions are pre-deposition and drive-in time. It has been made uniformity of at least. so, the average of sheet resistance was about 0.12%. In this study, sheet resistance was measured by 4-point prove. -
Most high efficiency silicon solar cells use a passivated selective emitter. It have been an important research subject for crystalline silicon solar cells for decades. It is being used in production for high efficiency solar cells. Most of the selective emitter process require expensive extra masking, etching steps, and a double diffusion process making selective emitters not cost effective. In this paper, we study method for single diffusion step selective emitter process as an alternative to not cost effective double diffusion process. Cost effective selective emitter that the efficiency should be increased significantly (mare than 0.2%) and that the process should simple, robust and cheap.
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The Anti-reflection coating(ARC) properties can be formed on silicon substrate using a simple electrochemical etching technique. This etching step can be improve solar cell efficiency for a solar cell manufacturing process. This paper is based on the removal of silicon atoms from the surface a layer of porous silicon(PSi). Porous silicon is form by anodization and can be obtained in an electrolyte with hydrofluoric. It have demonstrated the feasibility of a very efficient porous Si layer, prepared by a simple, cost effective, electrochemical etching method. We expect our research can results approaching to lower than 10% of reflectance by optimization of process parametaer.
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P-type의 단결정, 다결정, UMG 기판을 이용하여 phosphorus툴 확산시킨 후 열처리한 external gettering 방식으로 실리콘 내부에 있는 불순물을 제거하였고, 기판의 lifetime 변화를
$\mu$ -PCD를 이용하여 측정하였다. phosphorus를$850^{\circ}C$ 에서 기판 내부로 20분 확산시킨 후 기판의 온도와 시간을 변화시키면서 gettering 공정을 시행하였다. 에미터층으로 인해 기판의 bulk lifetime이 부정확해 지는 것을 방지하기 위해서 NaOH를 이용하여 에미터층을 제거한 후$\mu$ -PCD를 이용하여 lifetime을 측정하였다. 또한 기판의 표면효과를 최소화하기 위해서 lifetime 측정전에 iodine을 이용하여 표면 passivation을 하였다. -
Yim, Ju-Hyuk;Jung, Kyoo-Ho;Choi, Won-Chul;Kim, Hyo-Jung;You, Hyun-Woo;Kim, Kwang-Chon;Kim, Jin-Sang 237
고효율의 열전특성을 갖는 나노 구조체 열전재료 연구의 일환으로 이종물질인$Bi_2Te_3$ -PbTe계 열전소재의 미세구조와 특성을 조사하였다. 계단식 냉각법(step cooling)를 통하여 시편을 제조 하였고, EPMA를 이용하여 시편의 미세구조를 관찰하였다. 열전소재의 상분리를 유도하기 위하여$700^{\circ}C$ 에서 용융 후 3일 동안$400^{\circ}C$ 로 유지시킨 후 상온까지 용융로에서 서냉하였다. EPMA를 이용하여 제조된 시편의 미세구조와 정량 분석을 하였고, 각 상의 결정구조 확인을 위하여 XRD 분석법을 이용하여 다결정의 PbTe와$Bi_2Te_3$ 그리고 준안정상인$PbBi_2Te_4$ 가 관찰 되었다. 계단식 냉각법을 통한 시편의 열전특성을 측정하였다. 이를 통하여 제조된 시편은 급속 냉각법으로 제조된 시편과 비교되었으며, 제벡계수는와 열전도도는 상온에서 각각 약 -100mV/K와 0.9W/mK로 약90%, 40%의 열전특성 향상을 확인하였다. -
This paper describes the design and analysis of vibration driven energy harvester for low frequency. The maximum output powers at load were
$124.2{\sim}132.2\;{\mu}W$ with magnets during 3 mm input displacement at 6 Hz resonant frequency of system. -
This paper describes the design and analysis of AlN piezoelectric micro generator. The generator was designed to convert ambient vibration energy to electrical power as a AlN piezoelectric material compatible with integataion process. From the simulation results, the resonance frequency of designed model is about 360 Hz and analyzed the bending mode, displacement and expectation output.
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In this paper, in these case of photoelectrode using UV treatment after oxygen solar conversion efficiency is increased. According to oxygen injection UV treatment will removal residual organics and increase the TiO2 surface area but also UV treatment can affect the same chemical action of ozone treatment. More porous networks and larger porosities were obtained in the TiO2 films prepared UV treatment after oxygen injection.
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Recently high and persistent spontaneous buildup of a surface potential (SP) upon vacuum deposition of tris (8-hydroxyquinolinato) aluminum (III) (
$Alq_3$ ), which is widely used for organic light emitting devices. The removal of the giant surface potential by visible light irradiation has also been reported. In this study, we coated$Alq_3$ on the FTO substrate and raise the capacity for absorbing sun light. The$Alq_3$ which is green light emitting diode emits light at wavelengths between 500 and 550nm. If we apply one's FTO/$Alq_3$ substrate in one's DSSC, we could get higher energy conversion efficiency because the N719 dye that we used for fabricating the DSSC emits light just at near 540nm. The energy conversion efficiency of approximately 4.8 % at the condition of irradiation of AM 1.5 (100 mW/$cm^2$ ) simulated sunlight, and the$J_{sc}$ is 12.0 mA/$cm^2$ ,$V_{oc}$ is 0.71 V, FF is 0.56, respectively. -
산화 알루미늄(
$Al_2O_3$ ) 박막을 p-type Czochralski(CZ) Si 위에 Remote Plasma Atomic Layer Deposition(RPALD)을 이용하여 저온 공정으로 증착하였다. Photolithography 공정으로 grid 패턴을 형성한 후 열 증착기로 알루미늄을 증착하여 MIS-IL (Metal-Insulator-Semiconductor Inversion Layer) solar cell을 제작하였다. 반응소스로는 Trimethylaluminum (TMA)과$O_2$ 를 이용하였다.$Al_2O_3$ 박막의 전기적 특성 평가를 위해 MIS capacitor를 제작하여 Capacitance-voltage (C-V), Current-voltage (I-V), Interface state density ($D_{it}$ )를 평가하였으며 Solar simulator를 이용하여 MIS-IL Solar cell의 Efficiency을 측정하였다. -
This paper two different etching, HF : HNO3 :DI and RIE were used for etching in multi-crystalline Silicon(Mc-Si) solar cell fabrication. The wafers etched in RIE texture showed low reflectance compared to the wafers etched in Acid soultion after SiNx deposition. In light current-voltage results, the cells etched in RIE texture exhibited higher short circuit current and open circuit voltage than those of the cells etched in acid solution. We have obtained 15.1% conversion efficiency in large area(
$156cm^2$ ) Multi-Si solar cells etched in RIE texture. -
Doping process of crystalline silicon solar cell process is very important which is as influential on efficiency of solar. Doping process consists of pre -deposition and diffusion. Each of these processes is important in the process temperature and process time. Through these process conditions variable, p-n junction depth can be controled to low and high. In this paper, we studied a optimized doping pre-deposition temperature for high solar cell efficiency. Using a
$200{\mu}m$ thickness multi-crystalline silicon wafer, fixed conditions are texture condition, sheet resistance($50\;{\Omega}/sq$ ), ARC thickness(80nm), metal formation condition and edge isolation condition. The three variable conditions of pre-deposition temperature are$790^{\circ}C$ ,$805^{\circ}C$ and$820^{\circ}C$ . In the$790^{\circ}C$ pre-deposition temperature, we achieved a best solar cell efficiency of 16.2%. Through this experiment result, we find a high efficiency condition in a low pre-deposition temperature than the high pre-deposition temperature. We optimized a pre-deposition temperature for high solar cell efficiency. -
This paper and the rear passivation experiment was local back surface field Nd:
$YVO_4$ green laser and the experiment was used performed to screen printing. Laser power 100%, with a fixed frequency for 60kHz Current of 29A and 30A were tested in two conditions. The point contact distances of 0.2mm, 0.4mm, 0.6mm, 0.8mm and 29A and 30A current conditions, it was found that is suitable for 0.4mm. -
In this study, the effect of wast heat-electric energy conversion according to temperature difference between two sides of a thermoelectric module was investigated as a way of electric energy conversion from waste heat generated in machinery system like automobile system.
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CdTe는 최근 적외선 검출기 개발에 응용하기 위해 활발한 연구가 진행 중인데 이는 HgCdTe(MCT)와 격자 불일치가 0.3% 이하로 대구경 단결정 MCT박막 제작이 용이하기 때문이다. 본 연구에서는 MBE 공정으로 GaAs 물질이 완충층으로 증착된 Si(100)기판을 사용하여 CdTe 물질과 Si기판간의 격자 불일치를 줄여 대면적 CdTe 단결정 박막을 얻고자 완충층의 두께별 결정성 및 표면 특성을 보았다. CdTe 박막의 증착은 Metal Organic Chemical Vapor Deposition system (MOCVD)를 이용하였고 실험결과 2nm의 GaAs 완충층이 사용된 박막에서 단결정 CdTe(400) 박막이 성장 되었으며, GaAs 완충층의 두께가 증가 함에 따라
$1{\mu}m$ 완충층에서는 다결정 박막이 성장 되었다. 본 연구결과는 Si 기판에 성장된 단결정 CdTe층을 이용 대면적 HgCdTe웨이퍼의 제조에 널리 이용 될 수 있으리라 여겨진다. -
Effect of Black Sugar as a Reducing Agent of
$Fe^{3+}$ on the Synthesis and Properties of$LiFePO_4$ 리튬이온 2차전지의 대체 양극 후보 물질인$LiFePO_4$ 를 합성하기 위하여 출발원료로$Li_2CO_3$ ,$Fe_2O_3$ ,$NH_4H_2PO_4$ 를 사용하여 볼밀 방법으로 혼합 분쇄한 후 열처리를 실시하였다. 합성 시에 3가 Fe를 2가로 환원시키기 위하여$C_{12}H_{22}O_{11}$ (흑설탕)을 출발원료와 함께 5 ~ 12 wt%로 나눠서 첨가하였다. 합성 후 XRD로 결정구조의 양질성을 확인하였고. FE-SEM으로 나노미터 크기의 구형 입자를 관찰하였다. XRF를 이용하여 3 ~ 10 wt%의 탄소 잔량을 확인하였다. 전기화학적 특성을 충 방전시험기로 평가한 결과, 8wt%의 탄소원을 첨가한$LiFePO_4$ 에서 가장 좋은 수명 특성을 얻었고, 최대 145 mAh/g의 방전용량을 얻었다. -
We investigated novel surface treatment and its impact on silicon photovoltaic cells. Using 2-step etching methods, we have changed the nanostructure on pyramid surface so that less light is reflected. This work proposes an improved texturing technique of mono crystalline silicon surface for solar cells with sub-nanotexturing process. The nanotextured silicon surface exhibits a lower average reflectivity (~4%) in the wavelength range of 300-1100nm without antireflection coating layer. It is worth mentioning that the surface of pyramids may also affect the surface reflectance and carrier lifetime. In one word, we believe nanotextruing is a promising guide for texturization of monocrystalline silicon surface.
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We have prepared CIGS thin film absorber layers with simple solution spray deposition technique and thin film were synthesized with different atomic ratio. CIGS thin films were synthesized using non-vacuum solution deposition method on pre-heated sodalime glass substrates and Mo-coated soadlime glass substrate. In precursor solution were Cu : In : Ga: S ratio 4 : 3 : 2 : 8 and the crystal type of sprayed thin film were CIGS chalcopyrite structures. This structure was identified as typical chalcopyrite tetragonal structure with XRD analysis. This result showed that CIGS solution deposition technique has potential for the one step synthesis and low cost fabrication process for CIS or CIGS thin film absorber layer.
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Linear induction motor performance for a light-weight urban transit has been established and verified. In this paper, linear induction motor is analyzed by finite-element method to consider influence of construction of secondary reaction plate on the transverse edge effect. With this effective analysis method, various models with overhang and cap have been analyzed to consider the relationship between the construction of secondary reaction plate and the transverse edge effect.
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Carbon nanotubes(CNTs) have excellent electrical, mechanical and chemical properties. In this paper, the variation of charge density and resistivity in MWCNT gas sensor were defined by three Dimensional Finite element method, and an accurate description of equivalent circuit of MWCNT gas sensor was investigated.
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The Polymer/MWCNT composite films were fabricated by air-spray method under the 2 kg/
$cm^2$ pressure using the multi-walled CNTs solution and the polymer on a$50{\mu}m$ kepton film substrates. We obtained the composite films which were sprayed with the MWCNT dispersion. In order to analysis the microstructure for the fabricated Polymer/MWCNT film, we used the X-ray diffraction (XRD) and SEM. -
We report aqueous synthesis of cadmium telluride (CdTe) quantum dots(QDs) using imidazolium-based ionic liquids with various functional groups. The functinalized ionic liquids were designed to have thiol groups, and then phase transfer with aqueous or organic solvents can be adjusted by changing side chain lengths of the cation and the choice of anion. The quantum yield was obtained IL-functionalized CdTe QDs reached up to 40% by post-treatment method.
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Metal-Insulator-Metal 구조의
$Al_2O_3$ ReRAM 소자를 플라스틱 기판 위에 제작하였다.$Al_2O_3$ 박막은 원자층 증착 방법으로$150^{\circ}C$ 의 저온 공정에서 15nm 두께로 증착하였으며, 하부와 상부의 전극으로는 DC 스퍼터링 방법으로 증착된 백금전극을 이용하였다. 플라스틱 기판위에 제작된$Al_2O_3$ ReRAM 소자는 unipolar 메모리 특성을 보였다. -
It is demonstrated that graphene sheets are produced via thermal reduction of graphene oxide (GO) in the presence of imidazoium-based poly (ionic liquid) (PIL). PILs plays an important role in minimizing the reduction time and dispersing graphene sheets in organic solvents. In addition, as-obtained graphene sheets are found to be functionalized with PIL molecules by the strong interaction of PIL and the graphene, as analyzed by various physical methods such as atomic force microscopy (AFM), X-ray photoelectric spectroscopy (XPS) and Raman spectroscopy. Such a strong interaction allows the successful production of graphene/PIL composites, in which their electrical properties are controllable by the loading level of graphene in the PIL matrix.
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최근 저항 변화 메모리는 종래의 비휘발성 기억소자인 Flash memory보다 access time(writing)이 105배 이상 빠르고, DRAM과 같이 2~5 V 이하의 낮은 전압 특성 및 간단한 제조 공정 등으로 차세대 비휘발성 메모리 소자로 주목 받고 있지만, 여전히 소자의 Endurance 및 Retention 특성 등의 신뢰성 문제를 해결해야 할 과제로 안고 있다. 이러한 문제점들을 해결하기 위해 페로브스카이트계 산화물 또는 이원 산화물 등의 다양한 저항 변화 물질에 대한 연구가 진행되고 있다. 하지만, 현재 주로 연구되고 있는 금속 산화물계 물질들은 그 제조 공정상 산소에 의한 다수의 산소 디펙트 형성과 제작 시 쉽게 발생할 수 있는 표면 오염의 문제점을 안고 있다. 본 연구는 기존의 금속 산화물계 박막의 제조 공정에서 발생하는 문제점을 해결하기 위해 질화물계 박막을 저항변화 물질로 도입함으로써, 기존의 저항 변화 물질의 장점인 간단한 공정 및 저전압/고속 동작 특성을 동일하게 유지 할 뿐 아니라, 그 제조 공정상 발생하는 다수의 산소 디펙트와 표면 오염의 문제를 해결함으로써, 보다 고효율을 가지며 재현성이 우수한 메모리 소자를 구현 하고자 한다 [1, 2]. 본 연구를 위해 Pt/AlN/Pt 구조의 Metal/Insulator/Metal(MIM) 저항 변화 메모리를 제작 하였다. 최적의 저항 변화 특성 조건을 확인하기 위해 70~200nm까지 두께 구분과 N2 가스 분위기의 열처리 온도를
$200{\sim}600^{\circ}C$ 까지 진행 하였다. 본 소자의 저항 변화 특성 실험은 Keithley 4200-SCS을 이용하여 진행 하였다. 실험 결과, AlN의 최적의 두께 및 열처리 온도 조건은 130nm/$500^{\circ}C$ 였으며, 안정적인 unipolar 저항 변화 특성을 확인 활 수 있었다. -
In this work, back bias effects in the program of the silicon-oxide-nitride-oxide-silicon (SONOS) cell using two-step pulse sequence, are investigated. Two-step pulse sequence is composed of the forward biases for collecting the electrons at the substrate terminal and back bias for injecting the hot electrons into the nitride layer. With an aid of the back bias for electron injection, we obtain a program time as short as 600 ns and an ultra low-voltage operation with a substrate voltage of -3 V.
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Kim, Kwang-Eun;Kang, Jeong-Min;Lee, Myeong-Won;Yoon, Chang-Joon;Jeon, Young-In;Kim, Sang-Sig 259
교류 전기장에 의해 배열된 ZnO 나노선 기반의 광다이오드를 제작하고 자외선 광특성을 조사하였다. ZnO 나노선은 dielectrophoresis (DEP) force와 토크 (T)에 의하여 두 전극사이에 배열되며, silicon (Si)나노선과 접합을 하여 p-n 접합을 형성한다. 형성된 p-n 접합은 정류작용을 하는 다이오드 특성을 보이며, 자외선 입사시 전류 점멸비 (on/off ratio)$10^1{\sim}10^2$ 을 보이는 광다이오드(photodiode)로서 동작한다. -
In recent years, polymer/clay nanocomposites have generated a great interest, both in industry and in academia, because they often exhibit remarkable improvement in material properties when compared with the virgin polymer or conventional micro and macro-composites. Among these properties are stiffness, strength, dimensional stability and permeability. [1-3] The dispersion of hydrophilic silicates in a hydrophobic matrix like Polyethylene (PE) is difficult because of the difference in character between PE and Montmorillonite (MMT). Therefore, it is necessary to modify PE with polar groups, which can increase the hydrophilicity of PE. In this study, High density polyethylene (HDPE)/
$Mg(OH)_2$ /Montmorillonite (MMT) nanocomposites having a various compositions were prepared by a melt blending technique with an internal mixer and properties namely mechanical, morpology, rheological and thermal properties were investigated -
In electric railways, high speed trains are normally supplied by AC 25kV power by contact between a pantograph contact strip and a contact wire. Advanced railway operating countries are actively researching various areas for the development of contact strips due to the reason that the properties of contact strips are one of the key factors of electric railways. This paper applied nano technology which is rapidly growing in many areas to the contact strip of a pantograph for current collection performance improvement considering speed up of electric railways. In detail, this paper proposes a method to dope nano particles of metal to a Korea Train eXpress(KTX) carbon pantograph and its measurement results. It is expected that the contents of this paper be used for preliminary study of high-speed railway current collection technologies.
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To investigate the effect of the amount of hydrogen on CVD grown-graphene, the flow rate of hydrogen was changed, while other process parameters were kept constant during CVD synthesis. Substrate which consists of 300nm-nickel/
$SiO_2$ /Si substrate, and methane gas mixed with hydrogen and argon were used for CVD growth. Graphene was synthesized at$950^{\circ}C$ . The thickness and the defect of graphene were analyzed using raman spectroscopy. The synthesized graphene shows non-uniform and more defective below a certain amount of hydrogen. -
High temperature annealing is required to synthesize graphene using CVD. When thin metal catalyst is used for the synthesis, the high temperature pre-annealing makes the thin catalyst highly agglomerated. We investigated the agglomeration effect on the shape of the synthesized graphene. It is found that high temperature annealing makes randomly distributed many hole or blister on metal catalyst, and the synthesized graphene features floral pattern around the hole. The floral patterns of graphene turned out to be multi-layers and higher D peaks in raman spectrum.
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Single-walled carbon nanotubes (SWCNTs) were grown on a Si wafer by using thermal chemical vapor deposition (t-CVD). We investigated the effect of the catalyst deposition rate on the types of CNTs grown on the substrate. In general, smaller islands of catalyst occur by agglomeration of a catalyst layer upon annealing as the catalyst layer becomes thinner, which results in the growth of CNTs with smaller diameters. For the same thickness of catalyst, a slower deposition rate will cause a more uniformly thin catalyst layer, which will be agglomerated during annealing, producing smaller catalyst islands. Thus, we can expect that the smaller-diameter CNTs will grow on the catalyst deposited with a lower rate even for the same thickness of catalyst. The 0.5-nm-thick Fe served as a catalyst, underneath which Al was coated as a catalyst support as well as a diffusion barrier on the Si substrate. The catalyst layers were. coated by using thermal evaporation. The deposition rates of the Al and Fe layers varied to be 90, 180 sec/nm and 70, 140 sec/nm, respectively. We prepared the four different combinations of the deposition rates of the AI and Fe layers. CNTs were synthesized for 10 min by flowing 60 sccm of Ar and 60 sccm of
$H_2$ as a carrier gas and 20 sccm of$C_2H_2$ as a feedstock at 95 torr and$810^{\circ}C$ . The substrates were subject to annealing for 20 sec for every case to form small catalyst islands prior to CNT growth. As-grown CNTs were characterized by using field emission scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, UV-Vis NIR spectroscopy, and atomic force microscopy. The fast deposition of both the Al and Fe layers gave rise to the growth of thin multiwalled CNTs with the height of${\sim}680\;{\mu}m$ for 10 min while the slow deposition caused the growth of${\sim}800\;{\mu}m$ high SWCNTs. Several radial breathing mode (RBM) peaks in the Raman spectra were observed at the Raman shifts of$113.3{\sim}281.3\;cm^{-1}$ , implying the presence of SWCNTs (or double-walled CNTs) with the tube diameters 2.07~0.83 nm. The Raman spectra of the as-grown SWCNTs showed very low G/D peak intensity ratios, indicating their low defect concentrations. -
일반적으로 중금속이나 질산성 질소와 같은 이온성 물질들은 사람의 건강이나 생태계에 좋지 않은 영향을 미칠 수 있다. 이들 오염물질들은 그 종류에 따라 건강에 피해를 주는 정도에 차이가 있지만 안전한 생태환경을 유지하기 위해서는 이들 물질들을 효과적으로 처리할 수 있는 필터가 필요하다. 전극 필터에 최대한 많은 이온들을 흡착시키기 위해서는 전극의 비표면적을 높이는 것이 매우 중요하다. Metal Fiber Filter의 제작과 제작된 Filter의 전기적 특성과 비표면적 향상, 고정성 및 통전성, 축전용량과 전기흡착 및 탈착 경향을 관찰하기 위해 3전극 시스템을 이용하여 Cyclic Voltammetry(CV)와 Chrono-amperometry(CA)를 측정하고 표면의 기공 구조를 관찰하기 위해 주사전자현미경 (SEM;Scanning Electron Microscope)을 이용하여 전극에 생성된 미세 기공의 크기 및 크기 분포를 측정한다. 또한 제작된 Filter 전극을 이용하여 전기장 하에서 수질 속에 있는 질산성이온의 선택적 제거 효율을 측정하여 보고, 측정된 데이터 값을 통해 Metal Fiber Filter의 전기적 특성과 중금속이나 질산성 이온 물질들을 선택적으로 제거할 수 있는 Filter 전극 설계 근거를 제시하고자 한다.
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실리콘 나노잉크를 이용한 프린팅 공정을 적용하여 결정질 실리콘 박막을 제조하였으며, 다양한 공정조건에 따른 박막의 특성을 연구하였다. 기존의 실리콘 박막형 제조 기술은 고가의 진공프로세스이므로, 비진공 프린팅 공정의 대체를 통하여 박막 태양전지의 제조원가를 획기적으로 절감할 수 있다. 실리콘 나노입자는 저온 플라즈마를 사용하여 합성하였으며, 스핀코팅 (spin coating), 드롭핑 (dropping), 딥핑 (dipping) 등의 프린팅 공정을 이용하여 단결정 실리콘 웨이퍼 위에 박막을 형성하였다. 사용된 실리콘 나노입자는 10 ~ 50 nm 의 크기와 단결정 구조를 갖는다. 이러한 실리콘 나노입자는 Propylene Glycol 용매에 분산시켜 하부기판에 프린팅 하였다. 이렇게 증착된 나노입자들은
$600{\sim}1000^{\circ}C$ 의 온도와 다양한 분위기에서 열처리되어 고밀도화 되었다. 제조된 실리콘 박막의 물성 분석은 SEM, EDX, 그리고 X-ray 회절 측정을 통하여 수행되었다. -
The structural and electrical properties of microcrystalline silicon films were investigated by hot wire chemical vapor deposition(HWCVD) often called catalytic chemical vapor deposition(Cat-CVD). The Si microcrystalline phase is easily controlled by changing the rate of the silane concentration of
$SiH_4$ to$H_2$ during deposition. The Structural property was observed by Raman and SEM. Photo-conductivity and dark conductivity, and photo-sensitivity were observed by Sunsimulator (AM 1.5 illumination). The film color was changed by the variation of silane concentration. HWCVD is useful for the formation of Si thin films for solar cell and needs further commercialized development for mass production. -
AC anodizing on aluminum foil was investigated by the variation of AC voltage and frequency. The voltage and frequency were applied in the range of approximately 40~200V, 0~400Hz. The porous alumina film was formed and the growth rate of oxide film is increased with frequency. The structural property was analyzed by SEM and XRD. SEM results show the approximate relation between frequency, voltage and growth rate. The AC voltage effect on the structural modulation of porous alumina indicates that AC anodizing is useful for the application to nanocapacitor material.
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고주파 마그네트론 동시 스퍼터링법을 이용하여
$TiO_2$ 박막에 탄소를 도핑한 C/$TiO_2$ 박막을 제작하고, 박막의 두께와 탄소 도핑량에 따른 물리적, 광학적 특성을 조사하였다. 스테인레스강을 기판으로 사용하였으며,$TiO_2$ 박막과 기판의 열팽창계수 차이에 의한 크랙을 방지하기 위하여 Ti 박막을 DC 마그네트론 스퍼터링 장치를 이용하여 기판위에 증착시킨 후 실험을 진행하였다. EMP(Essential Macleod Program) 시뮬레이션을 이용하여 막의 층상구조, 두께, 물질변화를 통한 다양한 색상의 칼라를 구현하고 투과율, 반사율 등을 포함한 다양한 광학 특성을 사전 예측하였다. 제작된 박막은 투께 및 밀도에 따라 다양한 색상을 구현하였으며, 박막내의 흡수와 산란효과에 의해 굴절률이 감소하였다. 또한 순수$TiO_2$ 박막보다 접합력 및 경도가 증가함을 알 수 있었다. -
OLED device is one of the most attractive and alternative display components, which stems primarily from the self-emission, large intrinsic viewing angle, and fast switching speed. However, because of its relatively short history of development, much remains to be studied in terms of its basic device physics, manufacturing processes, and reliability etc. Especially among several issues, it should be noted that the device characteristics are very sensitive to the surface properties of transparent conducting oxide (TCO) electrode materials. In this study, we have investigated the performance of OLED devices as a function of sheet resistance and surface roughness of TCO thin films. For this purpose, ITO and IZO thin films were deposited by r. f. magnetron sputtering under various ambient gases (Ar, Ar+O2 and Ar+H2, respectively). The crystal structure and surface morphology were examined by using XRD and FESEM. Also, electrical and optical properties were Investigated.
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$BaTiO_3$ (BT) has high permittivity so that has been applied to dielectric and insulator materials in 3D system-level package integration. In order to achieve excellent performance of device, the BT layer should be highly dense. In this study, BT thick films were prepared by the inkjet printing method. And these films were cured at$280^{\circ}C$ after infiltration of polymer resin. As a result, we have successfully fabricated not only the inkjet-printed hybrid BT film but also metal-insulator-metal(MIM) capacitor without sintering process. Changes in the dielectric constant of BT hybrid film with particle size and packing density were investigated. The dielectric constant was increased with increasing packing density and particle size. Further, the BT hybrid film using two different size particles had even higher packing density and dielectric constant. -
We have fabricated alumina thick films by inkjet printing technology. Two different types of ink system were formulated in order to understand their evaporation behaviors and their evaporation effects on the powder distribution on, the surface during inkjet-printed alumina thick films. Single solvent system was formulated with N,N-dimethylformamide(DMF), which led to coffee ring effects which non-uniformly distributed alumina particles on the substrate during the ink evaporation. However, Co-solvent system which consists of both Water and DMF produced relatively uniform distribution of the particles on the substrate. We believe that these two different distributions of alumina particles are attributed to the ink fluid flow directions in the ink droplets ejected from the different ceramic ink system. We have modulated inkjet parameters such as dot-to-dot distance, line-to-line distance, jetting velocity and jetting drop size in order to find out the optimum condition for the printing of alumina thick films from two different ink systems. The surface roughness, microstructures and dielectric properties of these inkjet-printed alumina thick films were investigated.
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최근 들어 에너지 개발과 환경문제의 해결방안으로 열전발전 및 열전냉각에 많은 관심과 연구가 진행되고 있다. 열전소재의 특성 향상을 위해 열전성능지수를 높이기 위하여 나노 입자상을 열전소재 내에 분산하고자 하는 연구가 진행되었다. Grain 내에 나노 입자를 분산하기 위해서는 원료 입자에서부터 나노 입자가 열전소재 내에 분산되어야 하며 이것은 산화물 나노입자의 코어-쉘 형성으로부터 가능하다. 이 과정에서 나노 입자를 열전소재 내에 코어로 분산하기위한 나노입자의 합성 및 제어가 필수적이다. 본 연구에서는 용융염법을 이용한 BaTiO3 나노 일자를 합성하고 이들을 용매에 분산하는 것을 목표로 하였다. 염으로는 KCl, LiCl, NaCl 및 이들의 혼합 염을 사용하였으며 염의 청가량, 염의 종류, 반응온도 및 반응시간의 변화에 따라 BaTiO3 나노 입자를 합성하였다. 또한, 합성된 나노 입자의 입자크기와 응집 제어를 통해 나노입자들의 분산 상태를 확인해 보았다. 이 결과는 SEM, TEM, 입도측정기, XRD등의 측정 결과를 통하여 확인하고자 하였다.
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안료의 색상은 출발원료의 조성, 입자크기 및 소결온도에 의한 결정구조 등에 의존한다. 본 연구에서는 Rutile구조를 갖는 세라믹안료인
$TiO_2-WO_3$ -NiO의 합성에서 소결온도를 결정하기 위해 소결전 출발원료를 습식법에 의하여 Jar Mill에서 0.7-0.9um로 혼합분쇄한 후$100^{\circ}C$ 에서 24시간 건조하였다. 건조후$1100-1280^{\circ}C$ 에서 5구간을 선정하여 소결한 시료를 Jar Mill에서 0.8-1um로 분쇄한 후, 다시$100^{\circ}C$ 에서 24시간 건조하였다. 이렇게 얻어진 시료를 XRD로 상합성 정도를 조사하고, 색상 및 착색력을 spectrophotometer를 분석하였다. 색상은 1150와$1250^{\circ}C$ 에서 가장 좋은 Yellow 색상이 관찰되었으며, XRD에 의한 결정성의 분석결과와 비교적 일치하고 있다. Rutile구조를 갖는 세라믹안료의 색상은 소결시의 결정화도에 따라 민감하게 변화되고 있음을 알 수 있다. -
나노하이브리드 방법으로 제조된 변성 폴리이드계 나노하이브리드 절연코팅의 표면 내열특성을 비교 분석하였다. 최근 절연코팅의 사용환경이 열적내구성을 높게 요구하는 경향이 크다. 따라서 이러한 환경에 맞는 절연성과 열적내구성을 구현하기 위해서는 열적내구성이 우수한 세라믹 일자를 수지에 분산시켜 그 성능을 개선할 필요가 있다. 본 논문에서는 나노 하이브리드 방법으로 제조된 변성 폴리이드계 나노하이브리드 절연코팅의 표면 내열특성을 비교 분석하였다.
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본 논문에서는 나노하이브리드 방법으로 제조된 변성 폴리이드계 나노하이브리드 절연코팅의 표면 굴곡특성을 비교 연구하였다. CS로 나노하이브리드화된 수지의 코팅표면의 표면거칠기를 AFM 으로 분석하여 그 변화를 비교하였다. CS로 처리된 나노하이브리드 코팅면의 경우 기초수지의 코팅면과 비교하여 기저재료와 상관없이 표면 거칠기는 현저히 줄어드는 경향을 나타내었다. 이는 20nm 이하의 균일한 CS입자가 균일하게 분산되어 수지 내에 자리하므로 기저물질의 거칠기를 보완하는 역할을 하기 때문으로 분석된다.
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We present facile chemical route stabilizing dispersion of carboxylated single-Walled carbon nanotubes (SWCNTs) in ZnOsol prepared by using diethanolamine as a stabilizer. The dispersion was stabilized via capping of carboxyl groups on the SWCNT surface by a titania layer. We also demonstrated that the conductivity of the films prepared P3/
$TiO_2$ /ZnO as enhanced by therml treatment, and the thermal stbility of the film improved hybridization with ZnO sol pristine P3, P3/$SiO_2$ and P3/$TiO_2$ hybrid films. -
We have characterized the previously undescribed parameters for engineering the electrical properties of single-walled carbon nanotube (SWCNT) films for technological applications. The surface tension of the top coating passivation material and matching coefficients of thermal expansion for the substrate and carbon nanotube network are two crucial parameters for the fabrication of reliable and highly conductive single-walled carbon nanotube network thin films.
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We present a simple process for the fabrication of high performance transparent conducting films that contain single-walled carbon nanotubes (SWCNTs) noncovalently coated with an ultrathin titania layer. The hydrophobic interactions between nanotube surfaces and the acetylacetone (acac) ligands used to stabilize the
$TiO_2$ precursor provide an interesting alternative method for noncovalently coating the SWCNTs with a titania layer. The ultrathin titania layer on SWCNTs prevented the oxidation of functionalized SWCNTs at high temperatures, and protected against water molecule absorption. -
Alzheimer disease is a progressive neurodegenerative disease of the aged, characterized by memory loss and dementia. For diagnosis of Alzheimer disease we have simply modified macrophage with amyloid beta bonded with different molecules. Modified Macrophage was observed with microscope for co-localization of amyloid beta molecule. For this experiment we used fluoroscene labeling substances. The macrophage was modified also with cell staining method. For cell staining method was used avidin-biotin reaction principles. All experiments were carried out on poly-L-lysine coated and sterilized glass substrates. In the presentation we will show the further investigations and applications with modified macrophage.
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In this study, ZnO nanorod arrays are grown on organic substrates by hydrothermal method which requires a low temperature, simple process, and no vacuum. The structure properties of ZnO nanorods were examined by field emission scanning electron microscopy and X-ray diffraction. To detect the optical transmission, ultraviolet visible spectrophotometer was also used. From results, the ZnO nanorods were grown the horizontal growth on the organic substrates had the length of over
$10\;{\mu}m$ . After deposition of ZnO seed layer, the ZnO nanorod arrays had uniformity orientation and length. -
LED Device was designed of electronic circuits of electrical power part for used Pspice student version and used Infrared LED lamps of load part. LED was used Computerized Electronic Medical Infrared Thermographic Imaging System for body surface Investigation of variable Body thermal asymmetry. It was knowledge body thermal Asymmetry of body surface and quantity body surface of electromagnetic wave to inflow electrical power part.
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Smart street light controller is a product with advance micro controller base for energy saving in conventional street lighting systems. Intelligent Street light controller are specially developed for automation and energy saving in conventional street light systems and lighting systems. It is so designed that it operates on sunrise & sun set timings according to longitude of particular location with facilitate to set month wise civil twilight timings to cope up with all seasons. Dimming (Power down) mode selection switch on/off at fixed times with relay or contactor. Night dimming, staggering and intelligent control reduces burn hours and increases the lifetime of lamps with about 30% and low annual operating cost type base are among the most inexpensive wireless technologies available. Low initial costs As PLC wireless, there is no need to establish cable connection.
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YBCO ceramic specimens were fabricated by added
$BaTiO_3$ as donors and sintered$950^{\circ}C$ /24hrs. Average grain size decreased with increased in added$BaTiO_3$ . Affect to grain growth. XRD result, peak strength was lowed then crystallization not well all specimens. All specimens critical temperature about 90k. -
본 논문에서는 전세계가 스마트그리드 전력망을 구축하고 있는 시점에서 자동화와 정보화 사회로 빠르게 진행되면서 에너지의 원동력인 전력사용량이 증가됨에 따라 전기사고에 의한 정전 건수도 지속적으로 증가 되고 있는 실정으로 이에 대한 원인 규명과 사고 방지대책이 요구되고 있다. 잠시라도 전기 없이는 모든 산업현장은 물론 모든 행정 까지도 마비되는 중요한 전력공급은 순간 정전까지도 사전에 예방할 수 있는 시스템이 필요 불가결하다. 따라서, 전력 공급망의 공급원인 발전기에서의 차단기나 AVR 등의 제어시스템에서의 사고원인을 분석하고 이에 대한 예방대책을 제시하여 고품질의 전력을 공급할 수 있도록 하는데 있다.
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In this paper, we proposed that optimum installation methods and characteristics of the hybrid type flame-sensor. The hybrid type flame-sensor has the high responsive performance. This research introduced the characteristics of the hybrid type flame-sensor, it was consist of IR/UV flame detector and proposed the optimum installation methods of false alarm reduced to resemble fire.
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In the study in which magnetic flux was conserved by the flux conserving ring, it was found that the field configuration produced by providing radio field was unstable, and the reserved field configuration was not because the instability could not be controlled not be controlled when MHD instability of plasma become high.
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In this study radio rotatiing field is used in order to form the stable reversed field configuration. The experimental study removing the flux conserving ring not so as to conserve toroidal flux, it was found that there occurred a rapid formation of a stable reversed field configuration, in which toroidal flux was increased shaping reversed field configuration and F-
$\Theta$ locus traced close to BFM because it started below F value. -
Translation Characteristics of Digital Decoder utilizing the analog parallel processing circuit technology is designed. The fast parallel viterbi decoder system acted by a replacement of the conventional digital viterbi Decoder has good propagation. we are applied proposed analog viterbi decoder to decode PR signal for DVD and analyze the specific circuit and signal characteristics.
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For real-time recognition of accurate measuring instrument, the adaptive parameter typed Circular Nural-Net Recognition is proposed. The fast nural network system acted by a replacement of the conventional nural network has good real-time convergence. we are applied proposed nural network to utilize various control and investigation equipments.
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The SBN ceramic thin films are deposited on Pt-coated electrode(Pt/Ti/
$SiO_2$ /Si) using RF sputtering method at substrate temperature of 300[$^{\circ}C$ ]. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The crystallinity of SBN thin films were increased with increase of annealing temperature in the temperature range of 600~800[$^{\circ}C$ ]. the surface rougness showed about 20 [nm]. -
Bimodal Tram is driven by both engine and Lithium Polymer battery pack which consists with 168 cells of LPB(80Ah, 650Vdc). LPB pack is very frequently charged and discharged in driving. Temperature inside of LPB pack makes an great effect on both charging and discharging capacity which seem to be related with LPB internal resistance. LPB internal resistance is increasing or little decreasing with the decreased temperature under 10 -
$20^{\circ}C$ and the increased temperature over$30^{\circ}C$ which is similar to the temperature characteristics of single LPB cell. This paper has analyzed the driving characteristics of LPB pack for bimodal tram is running with either battery mode or hybrid mode. -
In this paper, we propose a stereo vision based monitoring concept for passenger's safety on railroad platform. In general, basic concept of stereo image processing technique uses the correlations between left and right images, and extracts additional distance information. It provides easy removal of ambient illumination changes, which has been difficult to achieve with conventional 2D based image processing technique. In the paper, we present developed stereo camera and stereo vision based detection algorithm in order to monitor possible accidents at platform area, and verified the detection performance of proposed system with experimental results.
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Jo, Seo-Hyeon;Nam, Sung-Pill;Noh, Hyun-Ji;Kim, Dae-Yeong;Lee, Tae-Ho;Lee, Sung-Gap;Bae, Seon-Gi 294
In this study, piezoelectric properties of NKN-BT ceramics with various sintering temperature were investigated. The NKN-BT ceramics were fabricated by physicochemical method and characterized by X-ray diffraction analysis and scanning electron microscopy. The structural and dielectric properties of doped BT solution on the NKN ceramics were investigated. The dielectric constant and dielectric loss of NKN-BT ceramics sintered at$1130^{\circ}C$ was 2321 and 0.35, respectively. -
Lee, Joo-Hee;Kim, Chang-Il;Kim, Chul-Min;Paik, Jong-Hoo;Cho, Jeong-Ho;Chun, Myoung-Pyo;Jeong, Young-Hun;Lee, Jeong-Bae;Lee, Seung-Dae;Lee, Young-Jin 295
생체 식립형 임플란트의 경우 성공도는 매식체의 골유착 정도에 크게 영향을 받는다. 골유착 시 임플란트의 표면 형상과 하중, 골질의 양 등 많은 요인에 영향을 받게 되므로, 임플란트의 안정성을 주기적으로 점검해야할 필요가 있다. 따라서 임플란트 안정성을 공진 주파수 분석법을 이용하여 측정하기 위해 압전소자 제작과 트랜스듀서의 구조를 설계하였다. 유한요소 해석을 통하여 압전소자와 트랜스듀서의 두께와 크기 변화를 통해 측정 주파수 범위를 10kHz대역으로 맞추었으며, 해석 결과를 토대로 샘플제작과 평가를 실시하였다. 평가 결과 시뮬레이션 해석결과와 유사한 10kHz의 주파수 대역을 가지는 것을 볼 수 있었고, 식립된 나사의 고정도가 증가할수록 주파수가 점차 증가하는 결과를 얻을 수 있었다. -
Kim, Ji-Hong;Roh, Ji-Hyoung;Ryu, Kyoung-Jin;Moon, Sung-Joon;Kim, Jae-Won;Do, Kang-Min;Moon, Byung-Moo;Koo, Sang-Mo 296
In this work, we report the effect of substrate on the growth of Ga-doped ZnO (GZO) thin films. GZO thin films were deposited on various substrates by using pulsed laser deposition (PLD). The structural properties, surface morphologies, and electrical properties were investigated. From the results of HRXRD, c-plane (0002) oriented growth of GZO films was confirmed on$Al_2O_3$ (0001). On the other hand, the GZO films on LAO (100) substrates were grown along the a-axis. The obvious differences on the electrical properties of each film were also obtained. -
Moon, Sung-Joon;Kim, Ji-Hong;Roh, Ji-Hyung;Kim, Jae-Won;Do, Kang-Min;Moon, Byung-Moo;Koo, Sang-Mo 297
Transparent conductive Oxide (TCO) is an essential material in the various optoelectronic applications as a transparent electrode, such as solar cells, flat panel displays and organic light emitting diodes. Currently, Indium tin oxide (ITO) is commonly used in industry due to its low electrical resistivity, high transmittance and high adhesion to substrate. However, ITO is expensive and should be prepared at high temperature, which makes it hard to use ITO in flexible devices. In this regard, Ga-doped ZnO is expected as an ideal candidate for replacing ITO. -
In this study, both structural, dielectric properties of the NKN-0.94BNT-0.06BT ceramics were investigated. All samples of the NKN-0.94BNT-0.06BT ceramics were fabricated by conventional mixed oxide method with Pt electrodes. We report the improved electrical properties in the perovskite structure composed of the NKN, BNT and the BT ceramics. We investigated the effects of NKN, BT on the structural and electrical properties of the NKN-0.94BNT-0.06BT ceramics. The dielectric and structural properties of the NKN-0.94BNT-0.06BT ceramics were superior to those of single composition NKN, NKN-BNT and those values for the NKN-0.94BNT-0.06BT ceramics were 1455, 0.025 and
$29.04{\mu}C/cm^2$ . -
In this study, microwave properties with compositions and frequency of the
$Ba_3Co_2Fe_{24}O_{41}$ ceramics with Zn substitution for Co were investigated. From the XRD patterns, hexagonal structure of Z-type phase was existed as main phase. Diffraction peaks of Z-type phase were shifted to lower angle by Zn substituted for Co site. The permittivity was increased with Zn additions. In all composition, loss tangent of permittivities were increased with frequency. Permeability and magnetic resonance frequency were increased with Zn additions. Permeability was increased and loss tangent of permeability was decreased rapidly over 600 MHz~800 MHz. The loss tangent of permeability did not changed with composition ratio. In the case of$Ba_3Co_{1.6}Zn_{0.4}Fe_{24}O_{41}$ ceramics sintered at$1250^{\circ}C$ for 3 hours, the permittivity, loss tangent of permittivity, permeability and loss tangent of permeability were 28.277, 0.193, 22.992 and 0.065 at 310 MHz, respectively. -
Ceramic capacitor의 에너지내량을 향상시켜 제품의 신뢰성을 높이고자 RF Sputtering을 이용하여 외부전극을 형성하였다. 본 연구에서는 Target의 종류, 증착 시간 및 열처리 유/무에 따른 Ceramic capacitor의 전기적 특성 및 미세구조를 분석하여 최적조건을 확립하였으며, 최적 증착 조건으로 제작한 Ceramic capacitor의 에너지내량을 측정하였다. Target은 Ni target과 Cu target을 사용하였으며, Sputtering 시간은 10, 30, 60분으로 하였다. Sputtering 시간에 따른 Ceramic capacitor의 용량 특성과 손실은 큰 차이가 없었지만, Wire 연결시 Sputtering 시간에 따라 납땜성의 차이가 나타났으며, 증착 시간과 열처리 유/무에 따른 에너지내량의 변화를 확인하였다.
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현재 전 세계는 앞으로 사용 될 대체 에너지에 많은 관심 가지고 있다. 지금 사용하고 있는 에너지 연료는 한정되어 있기 때문에 대체에너지에 대한 연구가 활발히 진행 되고 있다. 그 중 압전체를 이용한 에너지 하베스팅은 많은 주목을 받고 있다. 주변 환경에서 필요한 에너지를 끌어 쓸 수 있는 대표적인 청정에너지 시스템 중 하나이기 때문이다. 최근 전원 공급원으로써 에너지 수확 시스템은 현 사회에 사용되고 있는 배터리로 전원을 사용하는 제품들을 소용량과 저전압 분야에서의 에너지 수확의 원리를 이용하여 전기전자제품의 사용시간 연장 및 응용분야 확대를 시도하는 연구가 활발히 수행되고 있다. 압전세라믹스를 이용한 에너지 하베스팅은 진동에너지를 전기에너지로 변환하는 것으로서 압전 특성이 높아야 한다. 일반적으로 압전 세라믹스는 PbO 성분이 들어가므로 환경적 오염 뿐만 아니라 인체에도 영향이 좋지 않으므로 많은 나라에서 이러한 성분을 제한하고 점차적으로 줄어들고 있는 시점에서 PbO를 사용하지 않고 Lead-Free 세라믹를 사용한 연구가 진행되고 있다. 이 논문에서는 일반적인 소결 방법을 이용하여 (Na,K)NbO3 세라믹에 CeO2를 첨가한 압전 세라믹을 제작하였다. 제작된 압전 세라믹스로 에너지 하베스팅 소자를 제작하고, 이 소자로 수확된 에너지로 DC-DC Converter 응용 특성에 대하서 연구하였다. 압전 세라믹스의 좋은 압전 특성을 출력하기 위하여 캔틸레버의 고유 진동수가 진동원의 주파수와 일치하는 공진을 일으켜야 한다. 따라서 구동회로는 주파수원을 찾아 설계하였고, 압전 세라믹스의 진동은 가진기를 이용하여 구동실험을 하였다. 지금까지 나와있던 에너지 하베스팅 회로와 비교하여 그 특성을 분석하고, 시뮬레이션 및 실험을 통하여 검증하였다.
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The lead-free piezoelectric ceramics must have high piezoelectric properties and electrical properties for the applications of piezoelectric devices. Therefore, KNN ceramics were investigated as a function of the variation of Nb. The density was increased with the increase of Nb. The density was saturated above 0.8895 mol Nb. The maximum value of electromechanical coupling coefficient(kp) was obtained 0.428 at 0.8895mol Nb. This result can be attributed to the well sintered of specimens. Also, The maximum value of mechanical quality factor(Qm) showed 1554 at 0.8895mol Nb. Therefore, this composition can be used for application of piezoelectric device such as piezoelectric transformer and piezoelectric actuator.
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국제적으로 에너지 고갈에 대한 문제점과 환경적은 측면에서 대체 에너지 개발에 대한 관심이 뜨거워 지고 있는 지금 그중에서 에너지 하베스팅에 대한 연구가 활발히 이루어지고 있다 에너지 하베스팅 이란 "자연에서 버려지는 에너지를 수확하여 저장하는 기술" 이며 에너지 하베스팅 방법으로는 태양광을 이용한 태양광발전, 기계적인 운동과 전자기적 현상을 이용한 발전 등이 있다. 태양광발전 같은 경우에 흐린날 이나 실내에서는 사용 할 수 없는 반면 날씨와 관계없는 진동의 기계적 에너지를 전기적 에너지로 변환 할 수 있는 압전 세라믹스를 이용한 에너지 하베스팅의 연구가 이루어 지고 있다. 에너지 하베스팅을 하기 위한 여러 가지 type의 소자가 있지만, 본 논문에서는 무연 압전 세라믹스를 이용한 cantilever type의 실험을 진행하였으며 에너지 하베스팅 시스템에서 핵심이 되는 것은 압전 세라믹스의 성능이므로 비교적 높은
$d_{33}$ 와$g_{33}$ 를 가진 소자를 선정하였다. 압전 세라믹스를 이용한 에너지 하베스팅의 장점으로 소형 경량으로 이용할 수 있는 범의가 넓으며 진동 또는 충격을 효과적인 방법으로 에너지로 변환할수 있다. 실험 과정으로 KNNS에 CuO를 첨가하여 1차 밀링후$Ag_2O$ 를 첨가하여 2차밀링 하여$900^{\circ}C$ 하소 cantilever type으로 성형 후$1080^{\circ}C$ 소성을 하여 세라믹스를 제작하여 그에대한 발전 특성을 조사하였다. -
최근 생활에 편리하며 휴대하기 좋은 전자기기들이 개발되고 있다. 휴대폰이나 MP3와 같은 전자기기들은 거의 필수품이라고 할 정도로 우리의 일상생활에 근접하여 있다. 그 종 대표적으로 휴대폰의 종류로 스마트폰과 같은 터치스크린을 이용한 사례는 점차 상승하고 있으며 시간이 지날수록 그 수요는 더욱 많아지고 있다. 때문에 몰입감 제공을 위하여 햅틱장치의 채용이 일반화 되고 있다. 햅틱장치란 가상환경이나 원거리에 있는 환경과 사용자가 상호 작용할 때 사용자에게 촉감이나 힘의 정보를 전달하여 주는 장치로 진동 및 회동 저항에 의해 사용자로 하여금 촉감들 느낄 수 있도록 하는 장치를 뜻한다. 즉, 현실감을 전달을 중점으로 하는 햅틱장치는 빠른 응답 속도와, 진동의 주파수와 크기는 독립적으로 제어가 가능해야 하며 기계적 수용기들을 직접적으로 자극할 수 있어야 한다. 하지만 모바일 햅틱장치의 경우 크기 및 소비전력의 문제로 모든 스펙을 만족하기에는 어려워 좀 더 한정적인 느낌을 제공할 수 없다. 현재까지 모바일 장치에서 햅틱 피드백을 위하여 진동모터나, 솔레노이드, 압전 액츄에이터 등이 많이 사용되어 지고 있다. 그 중 압전 액츄에이터는 입력에너지를 기계적 출력에너지로 변환되는 효과를 이용 한 것으로 압력 센서, 초음파 센서 등 많은 분야에서 응용되고 있으며 변위 범위는 작지만, 크기가 매우 작고 변위 정밀도가 높으며 발생력과 응답속도가 빠르다는 장점이 존재한다. 이를 이용한 햅틱 압전 엑츄에이터의 제작에 사용되는 압전 세라믹스는 높은 전기적 특성을 가질수록 더 졸은 효율을 가지며 이로 인하여 보다 좋은 전기적 특성을 가지는 압전 세라믹스를 필요로 한다. 현재 많이 사용되는 PZT계 세라믹스는 우수한 전기적 특성으로 많이 사용되고 있지만 Pb의 유독성으로 인한 환경문제로 Pb가 포함된 제품을 제한하고 있어 현재 Lead-free의 연구가 이루어지고 있다. Lead-free중 Ba
$(Ti_{0.8}Zr_{0.2})O_3$ (BZT)는 PZT계 세라믹스를 대체할 차세대 압전 재료로 주목받고 있다. 일반적으로 Lead-free의 압전계수($d_{33}$ =100~300pC/N)는 비교적 낮은 값을 보이지만 BZT의 압전계수(BZT$d_{33}$ ~620pC/N)는 PZT계 세라믹스의 압전계수($d_{33}$ =500~600pC/N)와 비교하여 부족하지 않은 압전계수를 보여주며 PZT를 대체할 재료로 주목받고 있다. 본 실험은 햅틱 압전 엑츄에이터용 무연 압전세라믹스의 제작을 위하여 Ba$(Ti_{0.8}Zr_{0.2})O_3-(Ba_{0.7}Ca_{0.3})-TiO_3$ (BZT -BCT)의 조성으로 유전 및 압전 특성을 조사하였다. -
In this study, in order to develop excellent lead free piezoelectric ceramics for piezoelectric transformer application (Na,K)(Nb,Sb)
$O_3$ ceramics were fabricated using conventional oxides mixed method and their piezoelectric and dielectric characteristics were investigated according to the amount of$Bi_2O_3$ addition. -
21 세기는 언제, 어디에서, 누구나가 정보를 자유롭게 염가에 이용할 수 있는 유비쿼터스 정보사회가 될 것으로 예상하고 있다. 이러한 유비쿼터스 사회가 실현되기 위해서는 필연적으로 대두되고 있는 과제가 에너지 공급원의 문제이다. 휴대용 전자제품이나 소형 에너지 공급원으로 지금까지 주로 전지가 사용되어 왔지만 이것들은 교환 및 충전이 불가피하다. 이러한 불편함을 개선하기위해 교환과 충전이 불필요하거나 아주 장시간동안 공급해주는 형태의 에너지 공급원의 필요성이 대두되고 있다. 이러한 에너지 공급원으로 최근에 많은 연구가 되고 있는 것이 주위의 환경으로부터 버려지는 에너지를 수확(harvesting)하여 전력으로 변환하는 에너지 하베스팅 (energy harvesting)기술이 연구 개발되고 있다. 에너지 하베스팅 응용을 위해서 사용되어지는 압전 세라믹스는 전압출력계수 (
$g_{33}$ )가 커야하는데 이것은 압전상수 ($d_{33}$ )와 유전상수 (${\varepsilon}_{\tau}$ )의 값에 영향을 받는 것으로 알려져있다. 그 중에서 우수한 전기적 특성 때문에 PZT를 기반으로 하는 압전 세라믹스가 사용되어져왔다. 그러나 Pb의 높은 유독성과 Pb를 포함하는 제품들의 처분문제들로 인해 제조에 관한 많은 문제점들을 지니고있다. 그리하여, Pb를 포함하지 않는 Pb-free계에 관한 연구가 전세계적으로 활발히 진행되고 있다. 다양한 Pb-free계 후보자들 가운데$K_{0.5}Na_{0.5}NbO_3$ (KNN)는 높은 큐리온도와 좋은 강유전 특성 및 압전특성 때문에 PZT를 대체할 가장 장래성있는 대안들 중의 하나로 고려되고 있다. 그러나 고온에서 알칼라인 원소들의 높은 휘발성 때문에 보통의 소결공정으로는 소결이 잘되고 치밀한 세라믹스를 얻기가 어렵다. 많은 연구에서 KNN 세라믹스의 소결성을 개선하기 위하여 강유전 또는 반강유전체인$SrTiP_3$ 와$LiTaO_3$ 를 고용체 형성에 포함시키고 또한$K_4CuNb_8O_{23}$ ,$MnO_2$ , CuO등과 같은 소결조제를 첨가하여 압전 특성과 소결성을 개선시켰다. 따라서 본 연구에서는 비화학양론적 (1-X)[$[(K_{0.5}Na_{0.5}]_{0.97}(Nb_{0.96}Sb_{0.04})O_3]$ + 0.008CuO + 0.2wt%$Ag_2O$ + X$CeMnO_3$ 의 조성을 사용하여 A사이트와 B 사이트에 각각 Ce이온과 Mn 이온의 치환량을 변화하여 그에 따른 유전 및 압전특성을 조사하였다. -
최근 유한연료의 고갈로 인해 세계 유가가 불안정 됨으로서 대체 에너지에 대한 연구가 많이 진행 되고 있다. 특히 압전 소자를 이용한 에너지 하베스팅은 압전 역효과를 이용한 것으로서 주변에서 무의미하게 버려지는 진동이나 바람, 열 에너지를 실 생활에 사용할 수 있는 전기 에너지로 변환할 수 있는 유망한 기술 중 하나이다. 이러한 에너지 하베스팅 기술은 일본과 같은 선진국에서 이미 지하철 및 일반 다리와 같이 진동이 극히 많은 곳에서 응용되고 있다. 이러한 에너지 하베스팅 기술을 응용 하려면 전압출력 계수(
$g_{33}$ )가 높아야 한다. 이것은 압전 d 상수와 유전상수에 영향을 많이 받는 것으로 알려져 있다. 현재가지 응용되는 압전 하베스팅 조성은 Pb(Zr,Ti)$O_3$ (PZT)를 기초로한 세라믹이 응용되고 있다. Pb(Zr,Ti)$O_3$ (PZT) 세라믹은 Morpohotropic phase boundary(MPB)에서 전기기계 결합계수 (kp) 와 기계적 품질계수 (Qm) 이 각각 0.5와 500으로 우수한 특성을 나타낸다. 또한 큐리온도 (Tc) 도$400^{\circ}C$ 로 온도 안정성 또한 높다. 하지만$1000^{\circ}C$ 이상에서 소결하는 PbO는 소결 중 급격한 휘발로 환경적 오염 뿐 아니라 특성의 저하를 야기시킨다. 그래서 몇몇 나라에서는 그 사용을 제한하고 점차적으로 사용을 줄여 나가고 있는 동시에 PbO가 첨가되어 있지 않은 Lead-Free 세라믹의 연구가 많이 진행되고 있다. Lead-Free 세라믹 중 alkaline niobate를 기초로 한 페로브스카이트 구조의 ($Na_{0.5}K_{0.5})NbO_3$ (NKN) 은 PbO를 기초로 한 세라믹을 대체할 유망한 후보자 중 하나이다. 하지만 NKN세라믹의 K 성분의 조해성 및 고온에서의 휘발로 인해 일반 적인 소결 방법으로는 고밀도의 세라믹을 얻기 매우 어렵다. 그래서 Hot pressing, Hot forging, RTGG(Reactive Template Grain Growth), SPS(Spark plasma Sintering)와 같은 특별한 소결 법을 이용하거나$K_8CuNb_4O_{23}$ (KCN) 이나$K_{5.4}Cu_{1.3}Ta_{10}O_{29}$ (KCT) 등을 첨가하여 그 소결성을 향상 시키는 방법도 있다. 또한 압전 d상수를 향상 시키기 위해$Nb_2O_5$ 나,$La_2CO_3$ ,$CeO_2$ ,$Li_2CO_3$ 등을 치환함으로써 압전 d상수를 향상 시켜 전압출력 계수를 높이는 연구 또한 많은 보고가 되어 있다. 특히$Li_2CO_3$ 의 첨가는 일반 적인 소결 방법으로도 밀도의 조밀함을 향상 시켜 그에 따른 높은 유전율과 전기기계 결합계수, 압전 d상수를 가져 많은 연구가 되어지고 있다. 그래서 본 연구에서는 일반적인 ($K_{0.5}N_{0.5})_{1-x}Li_x(Nb_{0.96}Sb_{0.04})O_3$ + 0.2mol%$La_2O_3$ + 1.2mol%$K_8C uNb_4O_{23}$ 세라믹에 x(=Li) 치환에 따른 유전 및 압전특성을 조사하였다. -
실리콘 나이트라이드 박막의 굴절률과 lifetime을 유전자 알고리즘과 일반화된 회귀 신경망을 이용하여 모델링하였다. 종래의 모델링에서 평가한 Spread Range 범위보다 더 작은 0.04~1.0 범위에서 평가를 수행하였다. 통계적 실험계획법을 적용해서 수집한 데이터가 이용되었다. 평가결과 보다 낮은 spread range에서 보다 우수한 예측모델이 개발될 수 있음을 확인하였다.
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Silicon Nitride(SiN) 박막을 펄스드 플라즈마 응용화학기상법을 이용하여 저 소스전력의
$SiH_4-N_2$ 플라즈마에서 증착하였다. Duty ratio의 변화에 따른 이온에너지와 굴절률의 변화를 고찰하였다. 저이온에너지는 증착률과 강한 상관성을 보였다. 이온에너지 변수의 증착률에의 영향은 신경망 모델을 이용하여 고찰하였다. -
ZnO 바리스터는 정전기 (ESD) 및 순간적인 써지(surge)로부터 전자기기 및 전자회로 등을 보호하기 위해 개발된 전자 세라믹스 소재이다. 최근 전자기기 등의 고속통신 추세에 따라 ZnO 바리스터는 높은 비선형 특성과 함께 보다 낮은 유전율 및 유전손실 특성이 특별히 요구되고 있다. 본 연구에서는 현재 양산되고 있는 Bi-계와 Pr-계 ZnO 바리스터가 아닌 새로운 조성계에
$Mn_3O_4$ 를 0.0~3.0 at% 첨가하여 소결 및 전기적 특성들 살펴보았다. 시편은 일반적인 세라믹 공정에 따라 제조하여$1200^{\circ}C$ 에서 1 시간 공기 중에서 소결하였으며, 소결 및 전기적 특성과 유전 특성(밀도, 미세구조, I-V 특성, 유전율, 유전손실, ZnO 비저항)은 FE-SEM, Keithley237, Agilent 4294a 및 Agilent 4991a 장비를 사용하여 첨가제에 따른 ZnO 바리스터의 특성 변화를 관찰하였다. 그 결과 Mn이 0.2 at% 첨가한 계의 바리스터의 상대밀도는 95%, 비선형계수는 14, 유전율은 140 (at 1MHz), 손실값은 0.147 (at 1 MHz)를 나타내었다. 이를 통하여 새로운 바리스터 조성계에서 Mn의 첨가에 따른 효과에 대하여 논하였다. -
Jo, Seong-Hwan;Yun, Yeong-Jun;Kim, Hyeong-Jun;Kim, Hyo-Tae;Kim, Ji-Hun;Nam, Song-Min;Baek, Hong-Gu;Kim, Jong-Hui 311
Aerosol deposition method(ADM)은 상온에서 에어로졸화 된 고상의 원료분말을 노즐을 통해 분사시켜 소결과정을 거치지 않고도 상온에서 고밀도 후막을 제조할 수 있는 공정이다. 이러한 Aerosol deposition method의 장점은 상온에서 고밀도 후막을 제조할 수 있고, 다양한 재료의 코팅이 가능하며, 코팅층의 조성 및 화학 양론비의 제어가 용이하다. 본 연구에서는 많은 장점을 가지고 있는 Aerosol deposition method를 이용하여 높은 유전상수, 압전계수, 초전계수를 갖는$BaTiO_3$ 분말을 원료로 하여 압전소자, 커패시터, 고전압용 유전체 등에 응용이 가능한 유전체 형성에 관한 연구를 진행하였다. 또한$BaTiO_3$ 같은 강유전체 세라믹을 이용하여 여러 가지 소자를 제조하는 경우 소자의 미세조직에 따라 물성이 영향을 받는 것으로 확인되어져 있다. 이에 본 연구에서는 세라믹 분말보다 상대적으로 탄성이 큰 polymer 분말 중 높은 유전율을 갖고 압전특성이 있는 Polyvinyl difluoride(PVDF)를 선정하여$BaTiO_3$ 분말에 첨가하여 동시분사법을 사용해 복합체 후막을 성장시켰고, 또한 금속 분말을 첨가하여 동시분사법을 사용해 복합체 후막을 성장시켰다. 성장된 복합체 후막은 유전율과 유전손실 그리고 leakage current, breakdown voltage, 미세구조 분석 등 다양한 분석이 이루어 졌으며, embedded capacitor 유전체 층으로 응용 가능성을 가늠하였고, 상온에서 제조된 유전체 층의 응용을 위한 최적의 공정조건을 제시하고자 한다. -
Kim, Chul-Min;Kim, Chang-Il;Lee, Joo-Hee;Paik, Jong-Hoo;Cho, Jeong-Ho;Chun, Myoung-Pyo;Jeong, Young-Hun;Lee, Young-Jin 312
모터나 기계류와 같이 주변에서 발생하는 미활용 진동에너지를 전기에너지로 수확하기 위한 Piezoelectric Energy Harvester를 개발하고자 하였다. PZT-5H의 조성으로 후막세라믹 적층 구조 캔틸레버 타입의 압전시트를 통해 압전 에너지 하베스터를 제작하였다. 일반적으로 진동에너지를 수확하여 전기에너지로 변환시키는 압전 에너지 하베스팅 기술은 에너지 효율이 낮은 문제점을 가지고 있으므로 에너지 효율을 높이기 위한 방법으로 본 연구에서는 Unimorph 와 Bimorph 타입의 캔틸레버의 가로, 세로, 두께, 재료변수에 따라 발생하는 최적의 효율을 가지는 구조를 찾고자 하였다. 캔틸레버 각 변수에 따른 공진주파수 대역에서 발생하는 전압을 분석하여 50Hz의 공진주파수를 가지는 60*35*0.2mm의 캔틸레버를 설계하였다. 시뮬레이션을 통해 얻어진 결과를 실험적으로 검증하기 위해 전력량을 측정한 결과, Bimorph는 Unimorph 타입에 비해 2배가량의 향상된 발전특성을 가지며 에너지 하베스터에서 초당$76.2\;{\mu}W$ 의 전력량을 가지는 것을 확인하였고 시뮬레이션 결과와의 타당성을 확인하였다. -
$BiFeO_3$ (BFO), when forming a solid solution with$BaTiO_3$ (BTO), shows structural transformations over the entire compositional range, which not only gives a way to increase structural stability and electrical resistivity but also applies a means to have better ferromagnetic ordering. In this respect, we have prepared and studied 0.8 BFO-0.2 BTO thin films on Pt(111)/$TiO_2/SiO_2$ /Si substrates by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been optimized to get better quality films. Based on the X-ray diffraction results, thin films were successfully deposited at the temperature of$700^{\circ}C$ and an oxygen partial pressure of 10mTorr and 330mTorr. The dielectric, ferroelectric, and magnetic properties have then been characterized. It was found that the films deposited under lower and higher oxygen pressure corresponded to lower leakage current. Magnetism measurement showed an induced ferromagnetism. The microstructures associated with the magnetic and dielectric properties of this mixed-perovskite solid solutions were observed by transmission electron microscopy, which revealed the existence of complicated ferroelectric domains, suggested that the weak spontaneous magnetization was closely associated with the decrease in the extent of rhombohedral distortion by a partial substitution of$BaTiO_3$ for$BiFeO_3$ . -
Shin, Yong-Deok;Ju, Jin-Young;Lee, Hee-Seung;Park, Jin-Hyoung;Kim, In-Yong;Kim, Cheol-Ho;Lee, Jung-Hoon 314
The SiC-$ZrB_2$ composites were fabricated by combining 40vol.% of Zirconium Diboride(hereafter,$ZrB_2$ ) powders with Silicon Carbide(hereafter, SiC) matrix. TheSiC+40vol.%$ZrB_2$ composites were manufactured through Spark Plasma Sintering(hereafter, SPS) under argon atmosphere, uniaxial pressure of 50MPa, heating rate of$100^{\circ}C$ /min, sintering temperature of$1,500^{\circ}C$ and holding time of 5min. But one on/off pulse sequence(one pulse time: 2.78ms) is 10:9(hereafter, SZ10), and the other is 48:8(hereafter, SZ48). The physical and mechanical properties of the SZ12 and SZ48 were examined. Reactions between$\beta$ -SiC and$ZrB_2$ were not observed via X-Ray Diffraction(hereafter, XRD) analysis. The apparent porosity of the SZ10 and SZ48 composites were 9.7455 and 12.2766%, respectively. The SZ10 composite, 593.87MPa, had higher flexural strength than the SZ48 composite, 324.78MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had Positive Temperature Coefficient Resistance(hereafter, PTCR). -
Chung, Yeon-Kyung;Park, Se-Hoon;Ha, Sang-Ok;Jun, Byung-Sub;Cha, Jung-Min;Park, Jong-Chul;Kang, Nam-Kee;Jung, Seung-Boo 315
휴대용 전자 기기는 얇고 가벼우면서 빠른 대용량을 처리하는 속도와 다기능이 필요한 추세로 가고 있다. 기기 크기가 작아짐에 따라서 내장 되는 칩 또한 소형화, 고집적화, 고성능화가 요구되므로 이에 상응하는 발전된 패키징 기술이 필요하게 되었고, 이에 대응하기위해서 embedded components device 패키징 기술이 필요로 하게 되었다. 본 연구에서는$21{\Omega}$ 의 저항 값을 갖는 1005 수동 소자를 prepreg를 이용하여 PCB기판에 내장 한 후 micro via를 이용하여 무전해 구리 도금으로 전기적인 연결을 하여 기판을 제작하였다. 제작되어진 기판으로 Reflow, Aging 테스트 후 칩과 계면간의 금속화합물 반응을 관찰하였다. 또한 Reflow외 시효처리를 끝마친 기판을 사용하여 drop test를 실시한 후 fail 발생 시 저항 값의 변화와 접합부의 미세조직을 관찰하였다. -
SOP-L 기술은 LTCC기술과 다른 SOP 기술과 비교해서 이종의 물질을 접합하는데 용이하고 공정비용이 저렴하다. 또한 전자제품이나 부품 또는 재료들의 소형화가 많이 이루어지고 있는 추세이다. 본 연구에서는 6 layer의 다층형 diplexer를 제작하여 면압에 따른 층간 두께의 변화를 관찰하였고, 이를 통하여 두께 변화에 따른 특성 값의 변화를 통해 가장 최적화된 공정을 연구해보자고 한다.
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Jeon, Byung-Sub;Park, Se-Hoon;Chung, Yeon-Kyung;Cha, Jung-Min;Park, Jong-Chul;Kang, Nam-Kee;Jung, Seung-Boo 317
전자기기의 수요 증가와 함께 기기의 소형화, 고집적화가 요구되어짐에 따라 packaging 기술 개발에서 필요한 소재에 관한 연구가 활발히 진행되고 있다. 이에 따라 우수한 절연특성, 낮은 열팽창계수와 낮은 흡습도를 갖고 있으며 무엇보다도 플렉시블하여 3차원 조립이 가능한 LCP가 차세대 기판 부품소재로 많이 거론되고 있다. 그러나 LCP는 구리 동박을 열 압착하여 패턴을 형성하므로 미세 패턴제작이 어려운 문제점이 있다. 본 연구에서는 LCP의 열가소성 특성을 이용하여 seed 구리 도금 층을 형성하여 열 압착 후 패턴 도금 법으로$10{\mu}m$ 이하의 패턴을 형성하였으며 구리층과 LCP 간의 접합강도를 열 압착 온도 별로 측정하였다. -
Generating Characteristics of Cymbal Type Piezoelectric Transducer according to Change of Cymbal CapIn this paper, we studied generating characteristic of cymbal type piezoelectric transducer according to change of cymbal cap. The transducer is composed of circular piezoelectric ceramic and two elastic bodies which are shaped as cymbal. Two elastic bodies are attached to upper and bottom of the ceramic. Principle of the transducer is to generate expanded displacement because vertical stress is transformed into horizontal stress by slope angle of elastic bodies. The transducer also has advantage of high durability by the angle of elastic bodies. In this study, each parameter was chosen, and then generating characteristics were analyzed by FEM program. The parameters were slope angle of cymbal cap (theta), cap height (h) and cap inner diameter(d). The model that had generating characteristic Of high voltage was chosen by results of the analysis. Besides, maximum vertical displacements according to change of vertical stress were analyzed by structural analysis in order to find out relation between the maximum vertical stress which can prevent from ceramic damage and conditions of each cap.
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The previous cross type USM(ultrasonic motor) has the stator of cross shape composed of 8 ceramics. However, ultrasonic motor with simple structure has the stator composed of only 4 ceramics. Principle of the motor is to apply alternative voltages which have 90 phase difference to attached ceramics, and then elliptical displacement is generated at four edges of elastic body. Characteristics of the motor were simulated by FEM(finite element method). The parameters were size of the stator and thickness of the ceramics. According to FEM results, driving frequency of motor is defined at 28 [kHz]. On the contrary, driving frequency of fabricated motor is defined at 26.8 [kHz] and then, experimental results were compared with FEM results at the frequency. As a result, elliptical displacement and speed of USM increased linearly with increasing applied voltage.
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In the case of existing ultrasonic motors, they have characteristics such as outstanding response speed, speed and high efficiency. However, it's very hard to use practically them as small motors due to complicated structure and expensive cost. This paper proposed v-type ultrasonic linear motor. Stator of the motor is composed of thin elastic body and four ceramics attached to upper and bottom areas of the body. The ceramics have each direction of polarization. When two harmonic voltages which had
$90^{\circ}$ phase difference were applied to the ceramics, the symmetric and anti-symmetric displacements were generated at the tip to make the elliptical motion. To find out a model that generates maximum displacement at contact tip, FEM program was used with change of leg-angle. In addition, optimal model was chosen by considering magnitude and shape of displacement according to change of frequency. -
In this paper, we propose a novel type shaft-less ring type ultrasonic motor. A traveling wave rotary type ultrasonic motor is selected as a base model. The newly designed stator has two piezoelectric ceramic rings which are bonded in sandwich shape as traveling wave generator. So, we can expect to produce higher torque. The proposed model has the rotor structure that coupled with the stator provokes the pressure, this model do not install the separate plate any spring device. We used the finite element method to verify the operation principle and to compute the vibration mode of proposed model.
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In this paper, we propose a novel type valveless micro-pump that uses extensional vibration mode of traveling wave as a volume transporting means for solving some problems about check valves, essential parts of usual pumps. The proposed pump consists of two piezoelectric ceramic rings and a metal body located in the middle of them respectively. Because the drift of bended surface that results from the traveling wave excitation controls the fluid flow, check valves are not needed in this pump model. In accordance with the variation of the pump body dimension, we analyzed the vibration displacement characteristics of pump model, determined the optimal design condition, fabricated the prototype pump from the analysis results and evaluated its efficiency.
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PNN-PZT계 세라믹스를
$Pb(Ni_{1/3}Nb_{2/3})_{0.4}(Zr_{0.48}Ti_{0.52})_{0.6}O_3$ 조성으로 설계하고, 이에 낮은 융점의 NiO를 1wt% 첨가하여 저온소결 특성을 평가하였다. 일반적인 세라믹 분말 소결법을 이용하여 시편을 제작하였으며, 이때의 소결온도는$850{\sim}105^{\circ}C$ 범위에서 변화시켰다. 소결체의 압전 및 유전적 특성을 평가를 하고. SEM 및 XRD를 이용한 미세구조 및 상 분석도 수행하였다. 이러한 실험 결과, PNN-PZT 세라믹은 NiO의 첨가로$1000^{\circ}C$ 정도에서도 저온소결이 가능한 것을 확인하였다. -
최근에는 압전체의 환경오염 문제의 해결 및 가격경쟁력을 갖추기 위해서 비납계 압전체에 대한 연구가 활발히 진행되고 있다. (Na,K)
$NbO_3$ 계는 페로브스카이트 구조를 가지는 비납계 세라믹스로 현재 가장 많이 연구되고 있는 물질 중의 하나이다. 본 연구에서는 압전성이 우수한$(Na_{0.44}K_{0.52}Li_{0.04})(Nb_{0.9}Ta_{0.04}Sb_{0.06})O_3$ 조성에 CuO,$Cu_2O$ 등의 Cu 산화물을 첨가하였을 때의 전기기계결합계수, 기계적품질계수, 비유전율, 압전전하상수, 문극-전계 이력곡선 (P-E hysteresis curve) 등을 변화를 평가하고자 하였다. -
Piezoelectric linear motors have been widely studied for auto focusing devices of digital cameras and cellular phones due to their simple structure. In this paper, we confirmed that novel piezoelectric butterfly linear motor was fabricated and its dynamic properties were analyzed. The piezoelectric transducer (having size
$9{\times}8{\times}1\;mm^3$ ) is composed of an elastic plate, which includes a tip for energy transfer and two fixing protrusions for fixture, and two piezoelectric ceramics. The butterfly linear motor has been designed and optimized using A TILA simulation program. The superposed motion is an elliptical vibration on the tip. The actual movement of the manufactured actuator was confirmed by a 3D laser dopier vibrometer and compared with the simulation results. The results of numerical study and experimental investigation will be used for the future optimization of the actuator and the realization of the advanced ultrasonic motor. -
The dielectric properties of continuous composition spreaded (CCS)
$BaTiO_3-SrTiO_3$ (BST) thin filmsgrown at room temperature and annealed at different temperature ($350^{\circ}C$ and$550^{\circ}C$ ) were investigated. Moreover, electrical properties (leakage current and breakdown voltage) of CCS BST thin films were also investigated. The aluminum top-electrode, sized by$200{\times}200\;{\mu}m2$ and apart from each other by$300\;{\mu}m$ , were deposited on the CCS BST thin films by the DC sputtering system. The dielectric properties of the CCS BST thin films were significantly influenced depending on the distance from$BaTiO_3$ and$SrTiO_3$ targets which was attributed to the$BaTiO_3-SrTiO_3$ composition ratio. The maps of dielectric constants and loss tangents were plotted via$1500\;{\mu}m$ - step measuring. The specific points showing the dielectric constant (k: ~300) and loss tangent (tand: ~0.008) at 1 MHz were found. -
In this paper, an investigation of factors affecting piezoelectric transformers is presented by ATILA software. These transformers are multi-layer piezoelectric transformers in square shape
$28\;{\times}\;28\;mm$ and operate in first vibration mode for step-down function. The piezoelectric transformers were modeled in 3D-dimension and analyzed using finite element method in ATILA software, a popular software in piezoelectric analysis. Modal and harmonic modules were used in this process. Effective factors to the properties of piezoelectric transformers including different input electrode patterns, directions of polarization, sizes of connective comer, number of layers were examined on the simulated model using input voltage of 20 V and load resistance of$100\;{\Omega}$ . Moreover, thermal analysis was also obtained with conditions of input voltage of 5 V and no-load. -
압전 세라믹스는 엑츄에이터 및 센서 등의 다양한 응용분야로 인하여 많은 연구가 진행되어왔다. 최근 친환경 무연 압전계인 Bi층상구조 (BNT) 및 알칼리 니오븀산화물계 (KNN)에 대한 연구가 집중되고 있다. 한편, 소형화 및 고성능의 압전소자에 대한 요구 증가로 고가의 내부전극인 Ag, Ag-Pd합금으로 이루어진 적층압전소자에 대한 연구개발이 진행되어 왔다. 본 연구에서는 Ni이나 Cu를 내부전극으로 사용하는 적층압전소자의 개발가능성을 타진하고자 Ni의 산화를 억제할 수 있는 환원분위기 소결시에 압전소재의 상변화 및 내환원성 정도를 조사하였다. 압전소재인 BNT 및 KNN를 공기중에서 합성한 후, 환원분위기의 영향을 조사하고자 샘플을 디스크 형태로 성형하여
$1000{\sim}1200^{\circ}C$ 에서 2 시간 동안 공기, 중성 (N2) 와 환원 분위기 (3 % H2 - 97 %의 N2) 에서 소결한 후 미세구조와 전기적 특성을 SEM, EDS, XRD, impedance analyzer로 조사였다. 환원분위기에서 소결된 BNT 샘플은 페롭스카이트 상이 관찰되지 않았으며, SEM/EDS 분석결과 시편의 표면에 Bi의 석출이 관찰되었다. KNN의 경우에는 공기중에서 소결 시편뿐만 아니라 환원분위기에서 소결된 시편에서도 페롭스카이트 구조를 보였으며, EDS분석결과 K 및 Na의 휘발이 비교적 적었다. -
적층 액츄에이터는 우수한 압전특성 및 그 재료가 가진 고유한 특성 때문에 최근 이동통신 단말기용 햅틱 소자 및 PC 와 그 주변기기로 수요가 폭발적으로 증대되고 있으며, 향후에도 CATV 네트워크와 무선통신기기를 비롯한 디지털 통신분야로 응용분야가 확대되리라 예상된다. 적층 액츄에이터에서 발생되는 에너지는 세라믹 그린시트 두께와 전극 면적에 비례하여 변위 및 응력이 증가하게 되므로 고적층형에 대한 필요성이 증대되고 있다. 이러한 고적층 액츄에이터의 경우 소성과정에 서 warpage 및 de-lamination 같은 결함이 발생하기 쉬우므로 그린시트의 균일성 및 전극과의 matching성 확보가 중요한 요소이다. 본 연구에서는 슬러리의 분산성과 시트 내 유기물 함량 최적화 실험을 진행하여 적층 액츄에이터용 그린시트를 최적화 한 후 공정 적용성 및 저온소성 전극인 Ag-Pd 전극과의 매칭성을 확보하고자 하였다. 이러한 후막공정 기술 개선을 통해 적층 액츄에이터를 제조하여 압전 특성을 측정하였다.
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이동통신 시스템의 소형화, 경량화, 다기능화 추세에 따라 이동통신 부품도 단위 부피당 소자의 집적도를 증가시키기 위하여 고집적화 추세로 급진전되고 있다. 이에 따라 세라믹 공정 기술도 고집적 추세로 다층화 되고 있어 수동소자의 내장화에 대한 필요성이 증대되고 있다. 이를 위하여 다양한 유전율 대역의 이종소재간 접합을 시도하지만 de-lamination, 내부 crack 등의 결함들이 발생하므로 열팽창계수 조절이 용이한 동종의 글라스를 사용하는 것이 유용하다. 본 연구에서는 공통의 글라스를 개발한 후 다양한 필러들을 혼합하여 mm파 대역에서 다양한 유전율을 갖는 LTCC 소재를 개발함으로써, 수동소자의 내장화에 따른 이종접합시의 매칭성을 극대화하고자 하였다. 이를 위하여 CaO-
$Al_2O_3-SiO_2-B_2O_3$ 계 공통글라스에$CaZrO_3$ ,$1.3MgTiO_3$ ,$2La_2O_3TiO_2$ 필러를 혼합하여 소결체의 미세구조, 유전특성 및 열기계적 특성을 고찰하였다. 이때 유전율 6에서 20에 이르는 저손실 소재를 개발할 수 있었다. -
Kim, Chang-Il;Lee, Joo-Hee;Kim, Chul-Min;Lee, Young-Jin;Jeong, Young-Hun;Cho, Jeong-Ho;Chun, Myoung-Pyo;Park, Shin-Seo;Cho, Beom-Jin;Lee, Mu-Yong;Kang, In-Seok;Paik, Jong-Hoo 331
본 연구에서는 차량 하중에 의해 압전체가 변형되어 전기에너지를 발생시키는 도로용 압전에너지 하베스터를 개발하기위한 설계 및 실험을 진행하였다. 최대의 전기에너지가 발생되도록 압전사각 시트를 닥터브레이드로 제작하여, 이를 강판에 부착하고 고유주파수를 낮추기 위해 끝단에 질량을 달아 캔틸레버형태의 구조로 제작하였으며 끝단 질량의 변화와 가진주파수에 따른 발전특성을 비교하였다. 이로써 도로용 센서 및 방향지시등의 전원으로 사용하기 위한 도로매설용 압전 에너지 하베스터의 타당성을 확인하였다. -
We have successfully demonstrated the inkjet printing method to create
$Al_2O_3$ films withouWe have successfully demonstrated the inkjet printing method to create$Al_2O_3$ films without a high temperature sintering process. In order to remove the coffee ring effect in the ink drop, we have introduced a co-solvent system in order to create Marangoni flow in the ink drop, which leads to the dense packing of ceramic powders on the substrate during inkjet process. The packing density of the Inkjet-printed$Al_2O_3$ films is around 60% (max. 70%) which is very high compared to the value obtained from the same material films by other conventional methods such as film casting, dip coating process, etc. The voids inside the films (which are around 40% of the entire film volume) are filled with the polymer resin (Cyanate ester) by the infiltration process. This resin infiltration is also implemented by the inkjet printing process right after the Ah03 film ink-jetting process. The microstructures of the printed$Al_2O_3$ films are investigated by Scanning Electron Microscope (SEM) to understand the degree of packing density in the printed films. The inkjet-printed$Al_2O_3$ films have been characterized to investigate its thickness and roughness. Quality factor of the printed$Al_2O_3$ film is also measured to be over 300 at 1MHz. -
압전형 에너지 하베스팅 소자는 외부에서 버려지는 기계적 진동 혹은 타격과 관련된 에너지로부터 전기 에너지를 획득할 수 있다는 잇점이 있다. 그러나 현재 이 방식으로부터 획득될 수 있는 에너지는 매우 작다는 단점이 있다. 이러한 문제들을 해결하기 위하여 본 연구에서는 두 가지 형태의 압전 소재를 제작하였다. 에너지 하베스팅 소자용 고효율 압전 세라믹와 결정배향된 세라믹을 제작하고 이에 대한 성능을 조사하였다. 결정 배향된 세리믹에서는 1 N의 외부 충격조건에서 소재가 100 V, 1 mW의 전력을 발생하였다.
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In order to fabricate the multilayer piezoelectric transformer by tape casting method, we investigated the effect of
$TiO_2$ and PZT powder additions on the Ag/Pd electrode. Meanwhile, effects of$TiO_2$ and PZT powder additives on the microstructure and electrical properties of Ag/Pd electrode were investigated in detail. In addition, the multilayer piezoelectric transformers were fabricated and the characteristics with various load resistance were measured at resonance frequency. The voltage step-up ratio was continuously change with increasing input voltage and load resistance, and then output voltage and powers were increased with increasing input voltage at matching impedance. The temperature rise of multilayer piezoelectric transformers were increased with increasing input voltage and load resistance. Meanwhile, multilayer piezoelectric transformers sintered at$1100^{\circ}C$ show the favorable characteristics with a power of 15 W at$100\;{\Omega}$ . -
$SiO_2$ ,$B_2O_3$ ,$Al_2O_3$ , CaO, MgO,$Na_2O$ ,$ZrO_2$ ,$Bi_2O_3$ 를 이용하여 성질이 다른 두 종류의 무연계 프릿트를 제조하여 특성을 표준화 하였고, 이들 무연계 프릿트를 이용하여 Ag계 도체 및$RuO_2$ 계 저항페이스트롤 제조하여 특성에 미치는 프릿트 조성의 영향을 연구하였다.$B_2O_3$ 를 첨가하여 퍼짐특성이 큰 프릿트의 경우 더 우수한 페이스트 특성을 나타내었다. -
Ga doped ZnO (GZO) transparent conductive films were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of GZO(
$Ga_2O_3$ 3.w.t%) and Zn metal. The GZO thin films were deposited as a various$PO_2$ (oxygen gas content). Base pressure was$2{\times}10^{-6}$ torr, and a working pressure was 1mTorr. The properties of thin films on the electrical and optical properties of the deposited films were investigated by using a four-point probe, a Hall Effect measurement and an UV/VIS spectrometer. The minimum resistivity of film was$6.5{\times}10^{-4}$ [$\Omega$ -cm] and the average transmittance of over 80% was seen in the visible range. -
갈륨-질화물 (GaN) 기반의 고 전자 이동도 트랜지스터 (High Electron Mobility Transistor, HEMT)는 GaN의 큰 밴드갭 (3.4~6.2 eV), 높은 항복전계 (Ec~3 MV/cm) 및 높은 전자 포화 속도 (saturation velocity
$-107\;cm{\cdot}s-1$ ) 특성과 AlGaN/GaN 등과 같은 이종접합구조(Heterostructure )로부터 발생하는 높은 면밀도(Sheet Concentration)를 갖는 이차원 전자가스(Two-Dimensional Electron Gas, 2DEG) 채널로 인해 차세대 고출력/고전압 소자로서 각광받고 있다. 하지만 드레인 쪽의 게이트 에지부분에 집중되는 전계로 인한 애벌린치 할복현상(Breakdown)이 발생하는 문제점이 있다. 따라서 AlGaN/GaN HEMT의 항복전압 향상을 위한 방법으로 필드플레이트(Field-Plate) 구조가 많이 사용되고 있다. 본 논문에서는 2D 시뮬레이션을 통한 AlGaN/GaN HEMT의 필드플레이트 구조 최적화를 수행하였다. 이를 위해 ATLASTM 전산모사 프로그램을 이용하여 필드플레이트 길이, 절연체 증류 및 두께에 따른 전류 전압 특성 및 전계 분산효과에 대한 전산모사를 수행하여 그 결과를 비교, 분석 하였다, 이를 바탕으로 기존의 구조에 비해 약 300%이상 향상된 항복전압을 갖는 AlGaN/GaN HEMT의 최적화된 필드 플레이트 구조를 제안하였다. -
지난 20여년 동안 반도체 레이저 다이오드는 주로 CD (DVD) 픽업용 (파장: 640 nm 이하) 및 통신용 (파장 1550 nm) 광원 분야에서 집중적으로 개발되어 왔다. 그러나 기술의 개발과 더불어 파장조절이 비교적 자유로워지고 광출력이 증대 되면서 기존의 레이저 고유의 영역까지 그 응용분야기 확대되고 있고, 이에 따라 고출력 반도체 레이저 다이오드의 시장 규모도 꾸준히 증가되고 있는 상황이다. 고출력 반도체 레이저 다이오드는 발진 파장 및 광출력에 따라 다양한 분야에 응용되고 있으며, 특히 발진파장이 808 nm 인 고출력 레이저 다이오드의 경우 재료가공, 펌핑용 광원 (DPSSL, 광섬유 레이저), 의료, 피부미용 (점 제거), 레이저 다이오드 디스플레이 등 가장 다양한 응용분야를 가진 광원 중의 하나라고 할 수 있다. MBE(Molecular Beam Epitaxy)로 성장된 InAlAs 에피층 (epi-layer)을 사용하여 고출력을 갚는 레이저 다이오드를 제작함에 있어서, 에피층은 결함 (defect)이 없는 우수한 단결정이 요구되지만, 실제 결정 성장 과정에서는 성장온도와 Al 조성비 등의 성장 조건의 변화에 따라 전기적 광학적 특성 및 신뢰성에 큰 영향을 받는 것으로 보고되고 있다. 이에 본 연구에서는 DLTS (Deep Level Transient Spectroscopy) 방법을 이용하여 InAlAs 양자점 에피층의 깊은 준위 거동을 조사하였다. DLTS 측정 결과, 0.3eV 부근의 point defect과 0.57 ~ 0.70 eV 영역의 trap이 조사되었으며, 이는 갈륨 (Ga) vacancy와 산소 원자의 복합체에 기인한 결함으로 분석된다.
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Lee, Hyoung-Jin;Song, Hong-Ju;Choi, Hong-Goo;Ha, Min-Woo;Roh, Cheong-Hyun;Lee, Jun-Ho;Park, Jung-Ho;Hahn, Cheol-Koo 339
Photo-assisted wet chemical etching of GaN thin film was studied using KOH based solutions. A$2{\mu}m-2{\mu}m$ titanium line-and-space pattern was used as a etching mask. It is found that the etching characteristics of the GaN thin film is strongly dependent on the pattern direction by unisotropic property of KOH based solution. When the pattern was aligned to the [$11\bar{2}0$ ] directions, ($10\bar{1}n$ )-facet is revealed constructing V-shaped sidewalls. -
본 연구에서는 유도결합형 플라즈마(ICP)를 이용하여, HBr/Ar 가스의 조성비 변화에 따른 Pb(Zr,Ti)
$O_3$ 박막에 대한 식각특성을 연구 하였다. PZT박막의 식각속도와 Oxide($SiO_2$ ), Photo resister(PR)에 대한 식각선택비를 추출하였으며, 식각 메카니즘을 규명하기 위하여 optical emission spectroscopy(OES)와 double Langmuir prove(DLP) 이용하여 라디칼 특성변화와 이온 전류밀도(Ion current density)를 측정하였다. -
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This paper mainly focuses and describes four-armed dual-band rectangular type patch antenna using teflon of 0.54 mm thickness substrate for the application in personal wireless communications at about 2 GHz and 2.5 GHz frequency ranges. The dual-band patch antenna is obtained by embedding one centered and two pairs of rectangular patches on single body above the substrate. Details of the proposed antenna design are presented and discussed as a novel design with remarkable value of return loss (S11) of -28.68 dB and it is the most suitable for WiMAX applications as well.
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In this paper, Schottky barrier thin-film-transistors (SB-TFTs) with platinum silicide at source/drain region based on glass substrate were fabricated. Poly-silicon on glass substrates was crystallized by excimer laser annealing (ELA) method. The formation of pt-silicide at source/drain region is the most important process for SB-TFTs fabrication. We study the optimal condition of Pt-silicidation on glass substrate. Also, we propose this device as promising structure in the future.
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A capacitor with engineered tunnel barrier composed of High-k materials has been fabricated. Variable oxide thickness (VARIOT) barrier consisting of thin SiO2/HfO2/Al2O3 (2/1/3 nm) dielectric layers were used as engineered tunneling barrier. We studied the electrical characteristics of multi stacked tunnel layers for various RTA (Rapid Thermal Anneal) and FGA (Forming Gas Anneal) temperature.
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1T-DRAM cell with solid phase (SPC) crystallized poly-Si thin film transistor was fabricated and electrical characteristics were evaluated. The fabricated device showed kink effect by negative back bias. Kink current is due to the floating body effect and it can be used to memory operation. Current difference between "1" state and "0" state was defined and the memory properties can be improved by using gate induced drain leakage (GIDL) current.
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A capacitorless one transistor dynamic random access memory (1T-DRAM) on silicon-germanium-on-insulator substrate was investigated. SGOI technology can make high effective mobility because of lattice mismatch between the Si channel and the SiGe buffer layer. To evaluate memory characteristics of 1T-DRAM, the floating body effect is generated by impact ionization (II) and gate induced drain leakage (GIDL) current. Compared with use of impact ionization current, the use of GIDL current leads to low power consumption and larger sense margin.
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In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.
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Nanostructures have great potential in various devices due to the their promising electronic and optical properties. Nano-patterned the front surface of a solar cell generally results in improved performance, mostly due to an increase in the short-circuit current by the incident photons strike the cell surface at an angle. In this work, we investigate AFM-assisted nano-patterned field effect transistors (FETs) with vairous silicon oxide distance value D, from
${\sim}0.5{\mu}m$ to$1{\mu}m$ . Also, we compared the electro-optical characteristics of the patterned FETs and the non-patterned FETs (reference device) based on both 2-dimensional simulation and experimental results for the wavelength from 100nm to 900nm. In addition, we report electric characteristics for illuminated surface in schottky barrier field effect transistors (SB-FETs). -
Great performance of many semiconductor devices requirs the use of low-resistance ohmic contact. Typically, transmission line method (TLM) patterns are used to measure the specific contact resistance between silicon and metal. In this works, we investigate contact resistance for metal dependent (Cr/Ag, Ni) using TLM pattern based on silicon-on-insulator (SOI) wafer. The electrode with Ni linearly increases contact resistance as the pattern distance increase from
$15{\mu}m$ to$75{\mu}m$ in accumulation part, but non-linearly increase in inversion part. In additional, the electrode with Cr/Ag linearly increases contact resistance as the pattern distance increase from$15{\mu}m$ to$75{\mu}m$ in inversion part, but non-linearly increase in accumulation part. -
Silicon carbide (SiC), one of the well known wide band gap semiconductors, shows high thermal conductivities, chemical inertness and breakdown energies. The design of normally-off 4H-SiC VJFETs [1] has been reported and 4H-SiC VJFETs with different lateral JFET channel opening dimensions have been studied [2]. In this work, 4H-SiC based VJFETs has been designed using the device simulator (ATLAS, Silvaco Data System, Inc). We varied the n-epi layer thickness (from
$6\;{\mu}m$ to$10\;{\mu}m$ ) and the channel width (from$0.9\;{\mu}m$ to$1.2\;{\mu}m$ ), and investigated the static characteristics as blocking voltages, threshold voltages, on-resistances. We have shown that silicon carbide JFET structures of highly intensified blocking voltages with optimized figures of merit can thus be achieved by adjusting the epi layer thickness and channel width. -
Nanoscale patterning using an atomic force microscope tip induced scratching was systematically investigated in AI thin film on 4H-SiC. To identify the effects of the scratch parameters, including the tip loading force, scratch speed, and number of scratches, we varied each parameters and evaluated the major parameter which has intimate relationship with the scale of patterns. In this work, we present the successful demonstration of nano patterning of Al thin film on a 4H-SiC substrate using an AFM scratching and evaluated the scratch parameters on Al/4H-SiC.
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Silicon Carbide (SiC) power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this paper, we report the effect of the P-base doping concentration (
$N_{PBASE}$ ) on the transient characteristics of 4H-SiC DMOSFETs. By reducing$N_{PBASE}$ , switching time also decreases, primarily due to the lowered channel resistance. It is found that improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the and channel resistance. Therefore, accurate modeling of the operating conditions are essential for the optimization of superior switching performance. -
본 논문에서는 소스와 드레인의 형성에 있어서 implantation 이 아닌 silicide를 형성시켜서 최고온도
$500^{\circ}C$ 가 넘지않는 저온공정을 실현하였고, silicon-on-insulator (SOI) 기판이 아닌 solid phase crystallization (SPC) 결정화 방법을 이용하여 결정화 시킨 SPC-TFT 기판을 사용하였다. Silicide 의 형성은 pt를 증착하여 furnace에서 열처리를 실시하여 형성하였다. -
In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about
$1\;M{\Omega}$ to several hundreds of$\Omega$ . As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials. -
We studied the dependence of the performance of schottky barrier metal-oxide-field effect transistors(SB MOSFETs) on the work function of source/drain metals. A strong impact of the various work functions and the light wavelengths on the transistor characteristics is found and explained using experimental data. We used an insulator of a high thickness (100nm) and back gate issues in SOI substrate, subthreshold swing was measured to 300~400[mV/dec] comparing with a ideal subthreshold swing of 60[mV/dec]. Excellent characteristics of Al/Si was demonstrated higher on/off current ratios of
${\sim}10^7$ than others. In addition, extensive photoresponse analysis has been performed using halogen and deuterium light sources(200<$\lambda$ <2000nm). -
In this paper, Poly silicon thin-film transistors (poly-Si TFTs) with employed the SPC (Solid phase crystallization) and ELA (Excimer laser annealing) methods on glass panel substrate are fabricated to investigate the electrical poperies. Poly-Si TFTs have recess-channel structure with formated source/drain regions by LPCVD n+ poly Si in low
$650^{\circ}C$ temperature. the ELA-TFT show higher on/off current ratio and subthreshold swing than a-Si and SPC TFT that therefore, these results showed that the ELA-TFT might be beneficial for practical embedded TFT memory device application. -
Hwang, Yeong-Hyeon;Kim, Min-Soo;Lee, Se-Won;Park, Jin-Gwon;Jang, Hyun-June;Lee, Dong-Hyun;Cho, Won-Ju 357
The electrical characteristics of ZnO thin film transistor (TFT) were investigated. ZnO thin layer was deposited by DC sputtering method and TFTs with ZnO channel layer were fabricated. On/off current ratio and saturated drain current of fabricated devices were improved by annealing in nitrogen ambient at various temperatures. As a result, the electrical characteristics of ZnO TFT were improved by post annealing in nitrogen ambient and it is important to optimize the annealing conditions for ZnO TFT fabrication. -
To improve the programming/erasing speed and leakage current of multiple dielectric stack tunnel barrier engineering (TBE) Non-volatile memory, We propose a new concept called staggered structure of TBE memory. In this study, We fabricated staggered structure capacitor on
$Si_3N_4$ stacked HfAlO and measured C-V curve that can observe tunneling characteristic of this device as various annealing temperature compared with that of single layer$SiO_2$ capacitor. -
IGBT(Insulated Gate Bipolar Transistor) 란 MOS(Metal Oxide Silicon) 와 Bipolar 기술의 결정체로 낮은 순방향 손실(Low Saturation)과 빠른 Speed를 특징으로 기존의 Thyristor, BJT, MOSFET 등으로 실현 불가능한 분양의 응용처를 대상으로 적용이 확대 되고 있고, 300V 이상의 High Power Application 영역에서 널리 사용되고 있는 고효율, 고속의 전력 시스템에 있어서 필수적으로 이용되는 Power Device이다. IGBT는 출력 특성 면에서 Bipolar Transistor 이상의 전류 능력을 가지고 있고 입력 특성 면에서 MOSFET과 같이 Gate 구동 특성을 갖기 때문에 High Switching, High Power에 적용이 가능한 소자이다. 반면에, Conventional IGBT는 MOSFET과 달리 IGBT 내부에 Anti-Parallel Diode가 없기 때문에 Inductive Load Application 적용시에는 별도의 Free Wheeling Diode가 필요하다. 그래서, 본 논문에서 별도의 Anti-Parallel Diode의 추가 없이도 Inductive Load Application에 적용 가능한 RC IGBT를 적용하여 600V/15A급 Three Phase Inverter Module을 제안 하고자 한다.
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반도체 산업은 지속적인 design rule 감소로 인해 직접도 및 Pin Count가 점점 증가함에 따라 보증해야할 회로의 수와 기능이 더불어 증가하고 있으며, 그 중 Test Cost 감소 방법 확보가 시급하게 되었다. 이에 따라 Test Cost 감소와 직결된 Test Time 감소 방법이 다양하게 제시되고 연구되고 있다. 본 논문은 Test Time의 한 부분인 반도체 검사 장비 (Automatic Test Equipment)의 효율적인 제어 방법을 제공함으로써, 관련 분야의 이해를 돕고자 한다.
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Choe, Gyo-Hyeong;Kim, Geun-Nam;Lee, Jeong-Ho;Lee, Gi-Seop;Do, Byeong-Hun;Gang, Hyeon-Tae;Yu, Seong-Jae 361
노광을 통해 형성되는 패턴 단위를 Shot이라 부르며, 이때 노광되는 각 Shot은 Wafer상에 이전 Layer에서 형성되어 있는 Shot 위에 정확히 중첩되어 형성 시켜야하며, 노광된 Shot이 중첩되어야 할 이전 Layer의 Shot에 대해 얼마만큼의 위치적 오차를 가지고 형성 되었는가 하는 것은 중첩위치오차 (Overlay Alignment Error)로 계측 된다. 이렇게 계측된 중첩위치오차는 현재 진행된 Lot에 대한 재 공정 필요 여부를 결정하거나 다음 Lot 공정을 진행할 때 각 Shot를 이전 Layer Shot에 정확히 중첩시키기 위해 얼마만큼의 위치 보정이 필요한지를 결정하는데 사용된다. 이처럼 Device Node의 Shrink로 인해 엄격한 허용도를 만족시키기 위해서는 Overlay 측정 정확도의 향상이 매우 중요해 지고 있다. 본 논문에서는 Halogen Lamp 대비 Led의 Light Intensity 부분에 대해 중점적으로 실험 하였으며, RBG Type의 Led는 Halogen Lamp Wavelength (광대역) 400nm ~ 800nm가 모두 포함된 White Light Source에서 특정한 단일파장대역 600nm ~ 650nm (가시광선 Led 영역)에서 계측하는 Layer에 대해 적용 가능성을 제시하였다. -
최근 반도체 산업은 지속적인 design rule 감소로 인해 미세 pattern 공정이 요구되고 있으며, 그 중 photo lithography 공정의 scanner overlay margin 확보가 시급하게 되었다. 본 연구는 scanner 장비의 overlay 능력 개선 item 발굴에 관한 연구로서 6개월간 해당 장비에 대해 overlay monitor를 평가하여 scanner의 기계적 요소가 주는 overlay 영향 기인성 최악의 다섯 가지 budget item을 도출하였다. 본 연구를 통해 도출 된 최악의 다섯 가지 budget item(chuck 간 생김 정도 오차, chuck 간편차, chuck 간 mirror 생길 정도 오차, stage 정확성, 마스크 정렬) 성분들을 monitoring 함으로써 overlay 향상에 크게 기여할 것으로 예상한다.
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After oxide wet etch with BOE(Buffered Oxide Etchant), triangle type defect maps were inspected and SEM image showed them unetch of oxide layer. As decreasing design rule, oxide unetch has become a crucial issue and has affected the yield and quality.
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In the electricity control field, a relay is the most widely used electrical switch. But it has problems about a material transfer phenomenon, contact bounce, and the mechanical life. These Problems cause the serious problem in a facility. So, we tried to solve these problems by applying MOSFET electronic switch and could find good improvement compared to conventional electrical switch.
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In this paper, silicon nitride thin films with different silane and ammonia gas ratios were deposited and characterized for the antireflection and passivation layer of high efficiency single crystalline silicon solar cells. As the flow rate of the ammonia gas increased, the refractive index decreased and the band gap increased. Consequently, the transmittance increased due to the higher band gap and the decrease of the defect states which existed for the 1.68 and 1.80 eV in the SiNx films. The reduction in the carrier lifetime of the SiNx films deposited by using a higher
$NH_3/SiH_4$ flow ratio was caused by the increase of the interface traps and the defect states in/on the interface between the SiNx and the silicon wafer. The silicon and nitrogen rich films are not suitable for generating both higher carrier lifetimes and transmittance. These results indicate that the band gap and the defect states of the SiNx films should be carefully controlled in order to obtain the maximum efficiency for c-Si solar cells. -
Simulation Program (AFORS-HET 2.4.1) was used, include the basic structure of crystalline silicon thin film as above, below Intrinsic a-Si:H films bonded symmetrical structure (Symmetrical structure) were used. Efficiency with variation of the concentration was grown by the a-Si p-type with increasing concentrations of Na, efficiency with increasing a-Si n-type of Nd Concentrations was not changed, was decreased rapidly when concentrations were decreased. Efficiency was increased when c-Si n-type of Nd concentration was increased, otherwise efficiency was decreased when concentration was decreased.
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Electrical characteristics of Large-grain silicon with Ni-induced crystallization which gate insulator is made of 80 nm
$SiO_2$ and 20 nm SiNx was fabricated and measured with different channel widths, channel length fixed$10{\mu}m$ . Focusing on the changes of channel widths from$4{\mu}m$ to$40{\mu}m$ . Field-effect mobility decreased from 111.30 to$94.10\;cm^2/V_s$ when the channel widths increased. Still threshold voltage was almost similar with -1.06V. -
Using TFTs crystallized by MICC and ELA, electron mobility and threshold voltage were measured according to various substrate temperature from
$-40^{\circ}C$ to$100^{\circ}C$ . Basic curve,$V_G-I_D$ , is also measured under various stress time from 1s to 10000s. Consequently, due to the passivation effect and number of grains, mobility of MICC is varied in the range of -8% ~ 7.6%, while that of ELA is varied from -11.04% ~ 13.25%. Also, since$V_G-I_D$ curve is dominantly affected by grain size, active layer interface, the graph remained steady under the various gate bias stress time from 1s to 10000s. This proves the point that MICC can be alternative technic to ELA. -
소자제조 공정의 질과 생산성을 향상시키기 위하여 플라즈마 감시가 필요하다. 본 연구에서는 광반사분광기(Optical Emission Spectroscopy)를 이용하여 소스전력의 변화에 따른 플라즈마 상태 데이터를 수집하였다. 수집된 데이터를 이용한 시계열 신경망 감시 모델을 개발하였으며, 개발된 모델과 CUSUM(Cumulative Sum Control Chart)를 결합하여 플라즈마의 이상 상태를 실시간으로 감시하는 기법을 개발하였다. 매우 우수한 감시 성능을 확인할 수 있었다.
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The effects of adding higher-valence impurities on the bipolar resistive switching characteristics of Pt/
$NiO_{1+x}$ /TiN MIM stacks and physical properties were investigated.$NiO_{1+x}$ films with 14% W deposited at 20% oxygen partial pressure exhibited the bipolar resistance switching characteristics in Pt/$NiO_{1+x}$ /TiN MIM stacks, while$NiO_{1+x}$ films with 8.2% W show unipolar resistance switching behavior. The relationship of W-doping and the crystallinity was studied by X-ray diffraction. The metallic Ni contents and$WO_x$ binding states with W amount was investigated by XPS. Our result showed that the metallic Ni,$WO_x$ binding states, and crystallinity in$NiO_{1+x}$ played an important role on the bipolar resistive switching. -
In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the MEMS implementation with nano structure. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between
$41{\AA}$ , which have the gate area$10^{-3}cm^2$ . The stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. -
본 연구에서는 Digital radiography(DR) 의 X선 필름 제작방식인 직 간접방식의 장점을 가지는 하이브리드 X선 필름를 수행하였다. 형광체로는 Gd2O3:Eu를 제작하였고, 광도전체로는 낮은 누설전류의 특성을 보이는 PbO를 사용하여 Screen printing 방식으로 100um, 200unm, 300um의 두께를 가진 X선 필름을 제작하였다. 그 결과 200un의 두께를 가진 하이브리드 X선 검출기의 Signal 10 noise 의 값이 기존의 사용화 되고 있는 a-Se 기반의 X선 필름보다 200 이상의 SNR을 얻을 수 있었다. 아직까지 기초 단계에 있는 하이브리드 X선 필름의 제작 방식은 향후 더 많은 연구를 통해 기존의 방식을 대체 할 수 있는 신기술, 신개념의 제조공정이 될 것으로 사료된다.
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Heo, Eun-Sil;Yun, Min-Seok;Jeong, Jae-Hun;Lee, Yeong-Gyu;Mun, Chi-Ung;Gang, Sang-Sik;Nam, Sang-Hui 373
본 논문에서는 Display용 PDP(Plasma Display panel)를 디지털 X-ray Detector로 적용하기 위해 Panel 내 Xe gas와 Ne gas의 비율을 달리하며 X-ray에 대한 기본적인 전기적 반응 특성을 연구하였다. 연구에 사용된 panel 은 상용화된 Display용 PDP를 5inch의 크기로 소형화한 sample을 제작하여 사용하였다. 제작된 sample panel의 구조는 기본적으로 Display용 PDP의 구조와 일치한다. 제작된 Sample panel의 X-선 검출기로서의 전기적 특성을 조사하기 위해 기본적인 전기특성인 Dark current, X-ray sensitivity, 그리고 Linearity를 측정하였다. 측정 결과, 진단 범위에서 충분한 전기적 Sensitivity 보이며, 선형적 특성 또한 우수한 결과를 보이는 등 안정된 전기적 동작특성을 보였다. 이러한 결과로부터 기존에 사용되어오던 Display용 PDP에 새로운 X선 변환층을 추가하고, 효율을 더욱 높일 수 있는 구조 변경을 통하여 상용화된 PDP를 디지털 X-선 검출기로서의 적용 가능성을 확인할 수 있었다. -
Kim, Sung-Hun;Lee, S.H.;Jeon, S.P.;Park, G.U.;Heo, E.S.;Sung, Han-Kyu;Park, J.G.;Nam, Sang-Hee 374
본 연구는 Roll-to-Roll Sputtering 장비를 사용하여 제작된 Flexible ITO electrode 필름의 방사선 검출기로의 적용가능성을 알아보기 위해 기존의 Glass ITO electrode의 전기적 특성을 비교 평가하였다. 본 연구는 Flexible ITO electrode와 Glass ITO electrode을 하부전극으로 형성하고, 최근에 X-ray 변환체로 활발히 연구되고 있는 Powder 형태의 반도체물질인 HgI2 와 PbI2를 Binder와 일정한 비율로 혼합하여 3-Rolls-Miller를 사용하여 Powder를 일정한 미세크기로 만들고, 대면적 제작이 용이한 Screen-Printing method을 이용하여 시편을 제작하였다. 제작된 필름은 하부전극의 종류에 따른 X-ray 입사 후의 전기적신호의 차이를 측정하고, HgI2와 PbI2 중 Flexible ITO electrode와 더욱 효율적으로 반응하여 기존의 Glass ITO electrode를 대체할 수 있는 전극을 발견하여 진단용 의료영상의 왜곡 현상을 제거할 수 있는 Flexible 방사선 검출기의 제작의 초석을 제공하는 연구를 목적으로 한다. SEM(Scanning Electron Microscope) 통하여 반도체 물질의 결정구조와 크기를 알아보았고, 하부 전극의 종류에 따른 전기적 신호검출을 위해 제작된 필름의 암전류(Dark current) 와 민감도(Sensitivity)를 측정한 후, SNR (Signal -to- Noise)을 계산하여 평가하였다. -
CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.
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The single crystals of p-
$CdIn_2Te_4$ were grown by the Bridgman method without the seed crystal. From photocurrent measurements, it was found that three peaks, A, B, and C, correspond to the intrinsic transition from the valence band states of$\Gamma_7$ (A),$\Gamma_6$ (B), and$\Gamma_7$ (C) to the conduction band state of$\Gamma_6$ , respectively. The crystal field splitting and the spin orbit splitting were found to be 0.2360 and 0.1119 eV, respectively, from the photocurrent spectroscopy. The temperature dependence of the$CdIn_2Te_4$ band gap energy was given by the equation of$E_g(T)=E_g(0)-(9.43{\times}10^{-3})T^2/(2676+T)$ .$E_g$ (0) was estimated to be 1.4750, 1.7110, and 1.8229 eV at the valence band states of A, B, and C, respectively. The band gap energy of p-$CdIn_2Te_4$ at room temperature was determined to be 1.2023 eV. -
The
$AgInS_2$ epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. After the as-grown$AgInS_2$ /GaAS was annealed in Ag-, S-, and In-atmosphere, the origin of point defects of the$AgInS_2$ /GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of$V_{Ag}$ ,$V_s$ ,$Ag_{int}$ , and$S_{int}$ obtained from PL measurement were classified to donors or acceptors type -
The ZnSe epilayers were grown on the GaAs substrate by hot wall epitaxy. After the ZnSe epilayers treated in the vacuum-, Zn-, and Se-atmosphere, respectively, the defects of the epilayer were investigated by means of the low, temperature photoluminescence measurement. The dominant peaks at 2.7988 eV and 2.7937 eV obtained from the PL spectrum of the as-grown ZnSe epilayer were found to be consistent with the upper and the lower polariton peak of the exciton,
$I_2$ ($D^{\circ}$ , X), bounded to the neutral donor associated with the Se-vacancy. This donor-impurity binding energy was calculated to be 25.3 meV. The exciton peak,$I_l^d$ , at 2.7812 eV was confirmed to be bound to the neutral acceptor corresponded with the Zn-vacancy. -
$Hg_{1_x}Cd_xTe$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of$590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was$5\;{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111) /GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out. -
The chalcopyrite
$ZnIn_2S_4$ epilayers were grown on the GaAs substrate by using a hot-wall epitaxy (HWE) method. The crystal field and the spin-orbit splitting energies for the valence band of the$ZnIn_2S_4$ have been estimated to be 0.1541 eV and 0.0129 eV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the${\Delta}so$ definitely exists in the$\Gamma_5$ states of the valence band of the$ZnIn_2S_4$ /GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the$A_{1^-}$ ,$B_{1^-}$ , and$C_1$ -exciton peaks for n = 1. Also, we obtained the$A_{\infty^-}$ and B-exciton peaks from the PC spectrum at 293 K. -
From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa2Se4singlecrystalthinfilm, wehavefoundthatthevaluesofspinorbitsplitting
$\Delta$ soandthecrystalfieldsplitting$\Delta$ crwere251. 9meVand 183.2me Vat 10K, respectively. FromthephotolwninescencemeasurementontheZnGa2Se4singlecrystalthinfilm,weobservedfreeexcition(EX)existingonlyhighqualitycrystalandneutralboundexiciton(A0,X)havingverystrongpeakintensity.Then,thefull-width-at-half-maximum(FWHM)andbindingenergyofueutralacceptorboundexcitionwerel1meVand24.4meV,respectivity.ByHaynesrule,an activation energy of impurity was 122 meV. -
The etch characteristics of the
$HfAlO_3$ thin films and selectivity of$HfAlO_3$ to$SiO_2$ in$Cl_2/BCl_3$ /Ar plasma were investigated in this work. The maximum etch rate was 108.7 nm/min and selectivity of$HfAlO_3$ to$SiO_2$ was 1.11 at$Cl_2$ (3sccm)/$BCl_3$ (4sccm)/Ar(16sccm), RF power of 500 W, DC-bias voltage of - 100 V, process pressure of 1 Pa and substrate temperature of$40^{\circ}C$ . As increasing RF power and DC-bias voltage, etch rates of the$HfAlO_3$ thin films increased. Whereas as decreasing of the process pressure, those of the$HfAlO_3$ thin films were increased. The chemical reaction on the surface of the etched the$HfAlO_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS). -
TiN is one of the mostly used barrier materials in copper metallization because of low friction coefficient and superior electrical properties. We need to investigate for the etching characteristic of TiN. In this study, we investigated about etching characteristic of TiN using
$BCl_3$ /Ar inductively coupled plasma system. The etch rate was measured by a depth pro filer. The chemical etching reactions of the TiN surface was investigated X-ray photoelectron spectroscopy. -
The surface reaction characteristics of Zinc Oxide (ZnO) in
$Cl_2/BCl_3$ /Ar gas ratio using inductively coupled plasma system were investigated. It was found that ZnO etch rate shows a non-monotonic behavior with increasing both Ar fraction in$Cl_2/BCl_3$ plasma, RF power, and gas pressure. The maximum ZnO etch rate of 53 nm/min was obtained for$Cl_2$ (3 sccm)/$BCl_3$ (16 sccm) /Ar(4 sccm) gas mixture. The chemical state of etched surfaces was investigated with X-ray diffraction (XRD) and the etched surface was investigated to the rms by atomic force microscopy (AFM). From these data, the suggestions on the ZnO etch mechanism were made by secondary ion mass spectrometery (SIMS). -
In this work, we have investigated the etching characteristics of
$TiO_2$ and selectivity of$TiO_2$ over$SiO_2$ thin films as resistance in ReRAM using the inductively coupled plasma. The etch rate and selectivity were measured by varying the$BCl_3$ addition into Ar plasma. The maximum etchrate was obtained at 110.1nm/min at$BCl_3$ /Ar=5sccm/10sccm, 500W for RFpower, -100v for DC-bias voltage, and 2Pa for the process pressure. The etched$TiO_2$ surface was investigated with X-ray photo electron spectroscopy. We explained the etching mechanism in two etch mechanisms, physiclas puttering and chemical reaction. -
최근의 전자재료들은 산화물 기반의 소자들을 이용하며 이들 소자의 특징은 가시광 영역에서의 높은 투과도와 실리콘 기반의 소자에 비해서 높은 이동도를 나타낸다. 이러한 점을 활용하여 LCD, PDP, 태양전지 등으로의 응용을 위해 활발히 연구되고 있다. 본 연구에서는 비정질임에도 이동도가
$10cm^2/V{\cdot}s$ 정도로 높은 이동도를 가지고 있는 a-IGZO 박막에 대하여 RF magnetron sputtering 법을 이용, 다각도의 연구를 진행하였다. 기판은 Corning 1737 유리기판을 사용하였으며 유기 클리닝 후 즉시 챔버 내부에 장착되었다. IGZO 타겟은$In_2O_3$ ,$Ga_2O_3$ , ZnO 분말을 각각 1:1:2mol% 조성비로 혼합하여 소결한 타겟을 사용하였으며 AFM, SEM, XRD 투과도를 이용하여 산소의 함량과 RF power에 따른 박막의 변화를 알아보았다. 박막 증착 조건으로는 초기 압력을$2.0{\times}10^{-6}$ Torr, 증착압력으로$2.0{\times}10^{-2}$ Torr를 유지하였으며, Ar 과$O_2$ 의 비율을 10에서 40%까지 변화시키며 시편을 제작하였다. AFM 분석결과$O_2$ 가 첨가될수록 박막의 거칠기가 감소하였으며, XRD 결과 Bragg's 법칙을 만족 하지 않는 비정질 구조임을 확인할 수 있었다. 가시광선 투과 특성은$O_2$ 를 첨가한 박막이 첨가하지 않은 박막보다 우수하였으며 그 평균은 85% 이상으로 양호하였다. Hall과 XPS 분석결과 산소함량이 많아질수록 박막의 특성이 절연체의 특성을 가짐을 확인하였다. -
Characteristics of working pressure on the ZnO Thin films prepared by RF Magnetron Sputtering System최근 ZnO 박막은 투명 박막, 태양전지, LED 등으로의 응용을 위한 새로운 기능성 박막으로 활발히 연구되어 지고 있다. ZnO 기반의 투명 박막 트랜지스터는 상온에서 증착 가능하여 유리기판을 이용한 광학소자와 플라스틱 기판을 이용한 플럭서블 소자 같은 차세대 전자소자를 구현 할 수 있다. 본 연구에서는 RF Magnetron Sputtering System을 이용하여 coming 1737 유리기판 위에 ZnO 박막을 공정압력에 따라 증착하고, 투명 반도체에 적합한 활용을 위한 구조적, 광학적 분석을 실시하였다. 박막 증착 조건은 초기 압력
$1.0{\times}10^{-6}$ Torr, RF 파워는 100W, Ar 유량은 100sccm, 그리고 증착온도는 상온이었다. 증착 압력은$7.0{\times}10^{-3}$ ,$2.0{\times}10^{-2}$ ,$7.0{\times}10^{-2}$ Torr로 변화시켰다. 표면 분석 (SEM, AFM) 결과 증착압력이 고진공으로 변화함에 따라 결정립들이 감소하였고 RMS roughness값이 낮아졌다. 그리고 XRD 분석을 통해 피크강도는 증가하고 FWHM은 감소함을 보이고 있는데 이는 결정성이 좋아짐을 나타낸다. 그리고 광학 투과도를 통해 가시광 영역에서의 높은 투과도(85% 이상)을 확인하였고, 고진공으로 변화함에 따라 밴드갭이 넓어지는 것을 확인하였다. -
In this study, Ferroelectric vinylidene fluoride-trifluoroethylene (VF2-TrFE) copolymer films were directly deposited on degenerated Si (n+,
$0.002\;{\Omega}{\cdot}cm$ ) using by spin coating method. A 1~5 wt% diluted solution of purified vinylidene fluoride-trifluoroethylene (VF2:TrFE = 70:30) in a dimethylformamide (DMF) solvent were prepared and deposited on silicon wafers at a spin rate of 2000 ~ 4000 rpm for 2 ~ 30 seconds. After annealing in a vacuum ambient at 100 ~$200^{\circ}C$ for 60 min, upper aluminum electrodes were deposited by vacuum evaporation for electrical measurement. X-ray diffraction results showed that the VF2-TrFE films on Si substrates had$\beta$ -phase of copolymer structures. The capacitance on highly doped Si wafer showed hysteresis behavior like a butterfly shape and this result indicates clearly that the copolymer films have ferroelectric properties. The typical measured remnant polarization ($P_r$ ) and coercive filed ($E_c$ ) values were about$5.7\;{\mu}C/cm^2$ and 710 kV/em, respectively, in an applied electric field of${\pm}$ 1.5 MV/em. The gate leakage current densities measured at room temperature was less than$7{\times}10^{-7}\; A/cm^2$ under a field of 1 MV/cm. -
In this paper, an investigation of the benefits of gate oxide for 8" the manufacturing of Trench MOSFETs and its impact on device performance is presented. Layout dimensions of trench power MOSFETs have been continuously reduced in order to decrease the specific on-resistance, maintaining equal vertical dimensions. We discuss experimental results for devices with a pitch size down fabricated with an unconventional gate trench topology and a simplified manufacturing scheme. The fabricated Trench MOSFETs are observed the trench gate oxidation by SEM.
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We fabricate Schottky diodes with the contact between a sol-gel derived ZnO layer and Au that guarantees the expected Schottky contact due to the high work function. The formed single metal Schottky barrier shows characteristics comparable to the barrier formed by alloys. Au is deposited by thermal evaporation on a ZnO thin film that is optimally formed under sol-gel process conditions of a 1-mol zinc acetate concentration and a 3000-rpm coating speed. Possible defects. which can provide deleterious current paths. are minimized by patterning the deposited Au. The I-V curve verifies the formation of a Schottky contact. Measurements showed that the Schottky barrier height and leakage current at -5 V were 0.6 eV and
$1{\times}10^{-12}A$ . respectively. -
The stability enhancement of Znic oxide thin film transistor deposited by PLD-DBD has been reported here using the bias temperature stress test. Znic oxide (ZnO) thin films were deposited on
$SiO_2$ /Si (100) by pulsed laser deposition method with and without dielectric barrier discharge (DBD) method. The DBD is the efficient method to adopt the nitrogen ions into the thin films. The TFT characteristics of ZnO TFTs with and without Nirogen (N) doping show similar results with$I_{on/off}$ of$10^5{\sim}10^6$ . However. the bias temperature stress (BTS) test of N-doped ZnO TFT with DBD shows higher stability than that of ZnO TFT.