Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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TFT production and electric characteristic comparison by ELA and MICC technique

ELA 및 MICC 기법을 이용한 TFT의 제작 및 전기적 특성 비교

  • Park, Tae-Ung (Sungkyunkwan University School of Information and Communication Engineering) ;
  • Lee, Won-Back (Sungkyunkwan University School of Information and Communication Engineering) ;
  • Yi, Jun-Sin (Sungkyunkwan University School of Information and Communication Engineering)
  • 박태웅 (성균관대학교 정보통신공학부) ;
  • 이원백 (성균관대학교 정보통신공학부) ;
  • 이준신 (성균관대학교 정보통신공학부)
  • Published : 2010.06.16
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Abstract

Electrical properties of Large-grain-size TIT with 7/7 ${\mu}m$ channel width and length which gate insulator is made of 20nm $SiO_2$ and 80nm $SiN_x$. was fabricated and measured with Large-grain-size technic(MICC) and compared to ELA technic's data. The field-effect mobility was decreased from 106.78 to $88.74\;cm^2$/Vs and threshold voltage also decreased from -1.8382 to -0.9529 V, when TFT process is changed from ELA technic to MICC technic. Subthreshold swing, also, increased from 0.22 to 0.32 V/dec and $I_{on/off}$ ratio decreased from $1.12{\times}10^8$ to $5.75{\times}10^7$.

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