Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.345-345
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- 2010
A study of 1T-DRAM on thin film transistor
박막트랜지스터를 이용한 1T-DRAM에 관한 연구
- Kim, Min-Soo (Kwangwoon University) ;
- Jung, Seung-Min (Kwangwoon University) ;
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Cho, Won-Ju
(Kwangwoon University)
- Published : 2010.06.16
Abstract
1T-DRAM cell with solid phase (SPC) crystallized poly-Si thin film transistor was fabricated and electrical characteristics were evaluated. The fabricated device showed kink effect by negative back bias. Kink current is due to the floating body effect and it can be used to memory operation. Current difference between "1" state and "0" state was defined and the memory properties can be improved by using gate induced drain leakage (GIDL) current.