Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.353-353
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- 2010
Electrical characteristics of Schottky source/drain p-MOSFET on SPC-TFT substrate
- Oh, Jun-Seok (Kwangwoon University) ;
- Cho, Won-Ju (Kwangwoon University)
- Published : 2010.06.16
Abstract
본 논문에서는 소스와 드레인의 형성에 있어서 implantation 이 아닌 silicide를 형성시켜서 최고온도