Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
- /
- Pages.215-215
- /
- 2010
Conformal Properties of InSbTe Thin Films Grown at a Low Temperature by MOCVD for Multi Level Phase-Change Memory Applications
멀티레벨 상변화 메모리 응용을 위해 화학기상증착법으로 저온에서 증착시킨 InSbTe 박막의 특성평가
- Ahn, Jun-Ku (Chungnam National University) ;
- Hur, Sung-Gi (Chungnam National University) ;
- Kim, Chung-Soo (Korea Advanced Institute of Science and Technology) ;
- Lee, Jeong-Yong (Korea Advanced Institute of Science and Technology) ;
- Yoon, Soon-Gil (Chungnam National University)
- Published : 2010.06.16
Abstract
The feasibility of InSbTe (IST) chalcogenide materials prepared by metalorganic chemical vapor deposition (MOCVD) for phase-change memory (PRAM) applications was demonstrated. Films grown below