Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Threshold voltage shift of solution processed InGaZnO thin film transistors with indium composition ratio

용액 공정으로 제작된 InGaZnO TFT의 인듐 조성비에 따른 문턱전압 변화

  • Park, Ki-Ho (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Lee, Deuk-Hee (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Lee, Dong-Yun (Electronic Materials Center, Korea Institute of Science and Technology) ;
  • Ju, Byung-Kwon (Department of Electrical Engineering, Korea University) ;
  • Lee, Sang-Yeol (Electronic Materials Center, Korea Institute of Science and Technology)
  • 박기호 (한국과학기술연구원 전자재료센터) ;
  • 이득희 (한국과학기술연구원 전자재료센터) ;
  • 이동윤 (한국과학기술연구원 전자재료센터) ;
  • 주병권 (고려대학교 전기전자전파공학과) ;
  • 이상렬 (한국과학기술연구원 전자재료센터)
  • Published : 2010.06.16
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Abstract

We investigated the influence of the indium content on the threshold voltage ($V_{th}$) shift of sol-gel-derived indium-gallium-zinc oxide (IGZO) thin film transistors (TFTs). Surplus indium composition ratio into IGZO decreases the value of $V_{th}$ of IGZO TFTs showed huge $V_{th}$ shift in the negative direction. $V_{th}$ shift decreases from 10 to -28.2V as Indium composition ratio is increased. Because the free electron density is increased according to variation of the Indium composition ratio.

Keywords