Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.348-348
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- 2010
Electric characteristics of Schottky barrier Field Effect Transistors with Halogen and Deuterium lamp
쇼트키 장벽 트랜지스터의 빛 조사에 따른 전기적 특성 연구
- Hwang, Min-Young (Kwangwoon University) ;
- Koo, Sang-Mo (Kwangwoon University)
- Published : 2010.06.16
Abstract
Nanostructures have great potential in various devices due to the their promising electronic and optical properties. Nano-patterned the front surface of a solar cell generally results in improved performance, mostly due to an increase in the short-circuit current by the incident photons strike the cell surface at an angle. In this work, we investigate AFM-assisted nano-patterned field effect transistors (FETs) with vairous silicon oxide distance value D, from