Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.297-297
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- 2010
Effect of Oxygen Pressure on the properties of Ga-doped ZnO Thin Films Prepared by Pulsed Laser Deposition at Low Temperature
PLD로 저온 증착한 Ga-doped ZnO 박막의 산소 분압에 따른 영향
- Moon, Sung-Joon (Korea University) ;
- Kim, Ji-Hong (Korea University) ;
- Roh, Ji-Hyung (Korea University) ;
- Kim, Jae-Won (Korea University) ;
- Do, Kang-Min (Korea University) ;
- Moon, Byung-Moo (Korea University) ;
- Koo, Sang-Mo (Kwangwoon University)
- Published : 2010.06.16
Abstract
Transparent conductive Oxide (TCO) is an essential material in the various optoelectronic applications as a transparent electrode, such as solar cells, flat panel displays and organic light emitting diodes. Currently, Indium tin oxide (ITO) is commonly used in industry due to its low electrical resistivity, high transmittance and high adhesion to substrate. However, ITO is expensive and should be prepared at high temperature, which makes it hard to use ITO in flexible devices. In this regard, Ga-doped ZnO is expected as an ideal candidate for replacing ITO.