Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.371-371
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- 2010
The Characteristics of Silicon Oxides for Microelectromechanic System
MEMS 설계를 위한 실리콘 산화막 특성
Abstract
In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the MEMS implementation with nano structure. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between