Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.352-352
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- 2010
Effect of P-Base Region on the Transient Characteristics of 4H-SiC DMOSFETs
P형 우물 영역에 따른 4H-SiC DMOSFETs의 스위칭 특성 분석
- Kang, Min-Seok (Kwangwoon University) ;
- Ahn, Jung-Jun (Kwangwoon University) ;
- Sung, Bum-Sik (Kwangwoon University) ;
- Jung, Ji-Hwan (Kwangwoon University) ;
- Koo, Sang-Mo (Kwangwoon University)
- Published : 2010.06.16
Abstract
Silicon Carbide (SiC) power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this paper, we report the effect of the P-base doping concentration (