Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.336-336
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- 2010
Properties of GZO thin films prepared by oxygen gas flow rate
산소 분압비에 따라 제작된 GZO 박막의 특성
- Jung, Yu-Sup (Department of Electrical Engineering, Kyungwon University) ;
- Kim, Kyung-Hwan (Department of Electrical Engineering, Kyungwon University)
- Published : 2010.06.16
Abstract
Ga doped ZnO (GZO) transparent conductive films were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of GZO(