Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.358-358
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- 2010
Electrical Characteristics of Staggered Capacitor ($Si_3N_4$ / HfAlO) for High Performance of Non-volatile Memory
- Published : 2010.06.16
Abstract
To improve the programming/erasing speed and leakage current of multiple dielectric stack tunnel barrier engineering (TBE) Non-volatile memory, We propose a new concept called staggered structure of TBE memory. In this study, We fabricated staggered structure capacitor on