Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.356-356
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- 2010
Electrical properties of poly-Si TFT by crystallization method for embedded TFT memory application
임베다드 TFT 메모리 적용을 위한 결정화 방법에 따른 전기적 특성평가
- You, Hee-Wook (Kwangwoon University) ;
- Cbo, Won-Ju (Kwangwoon University)
- Published : 2010.06.16
Abstract
In this paper, Poly silicon thin-film transistors (poly-Si TFTs) with employed the SPC (Solid phase crystallization) and ELA (Excimer laser annealing) methods on glass panel substrate are fabricated to investigate the electrical poperies. Poly-Si TFTs have recess-channel structure with formated source/drain regions by LPCVD n+ poly Si in low