Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
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- Pages.199-199
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- 2010
pH Sensor using back-gated MOSFET
Back-gated MOSFET을 이용한 pH 농도 측정센서
- Park, Jin-Kwon (Kwangwoon University) ;
- Kim, Min-Soo (Kwangwoon University) ;
- Cho, Won-Ju (Kwangwoon University)
- Published : 2010.06.16
Abstract
A back-gated MOSFET on silicon-on-insulator (SOI) substrate for pH sensor was investigated. We used concentrations of pH solution from 6 to 9. The fabricated back-gated MOSFET has current difference and threshold voltage shift by pH concentrations. Therefore, It can be used to simplification of conventional pH sensor.