Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2010.06a
- /
- Pages.159-159
- /
- 2010
p-contact resistivity influence on device-reliability characteristics of GaN-based LEDs
p-contact 저항에 따른 GaN기반 LED의 device-reliability 특성
- Park, Min-Jung (Yeungnam University & LED-IT fusion technology research center) ;
- Kim, Jin-Chul (Yeungnam University & LED-IT fusion technology research center) ;
- Kim, Sei-Min (Yeungnam University & LED-IT fusion technology research center) ;
- Jang, Sun-Ho (Yeungnam University & LED-IT fusion technology research center) ;
- Park, Il-Kyu (Yeungnam University & LED-IT fusion technology research center) ;
-
Park, Si-Hyun
(Yeungnam University & LED-IT fusion technology research center) ;
-
Cho, Yong
(Yeungnam University & LED-IT fusion technology research center) ;
-
Jang, Ja-Soon
(Yeungnam University & LED-IT fusion technology research center)
- 박민정 (영남대학교 & LED-IT 융합산업화센터) ;
- 김진철 (영남대학교 & LED-IT 융합산업화센터) ;
- 김세민 (영남대학교 & LED-IT 융합산업화센터) ;
- 장선호 (영남대학교 & LED-IT 융합산업화센터) ;
- 박일규 (영남대학교 & LED-IT 융합산업화센터) ;
-
박시현
(영남대학교 & LED-IT 융합산업화센터) ;
-
조용
(영남대학교 & LED-IT 융합산업화센터) ;
-
장자순
(영남대학교 & LED-IT 융합산업화센터)
- Published : 2010.06.16
Abstract
We conducted bum-in test by current stress to evaluate acceleration reliability characteristics about p-resistivity influence of GaN-based light-emitting diodes. The LEDs used in this study are the polarization field-induced LED(PF-LED) having low p-resistivity and the highly resistive LED(HR-LED) having high p-resistivity. The result of high stress experiment shows that current crowding phenomenon is occurred from the center of between p-bonding pad and n-bonding pad to either electrodes. In addition, series resistance and optical power decrease dramatically. These results means that the resistance of between p-bonding pad and p-GaN affect reliability. That's why we need to consider the ohmic contact of p-bonding pad when design the high efficiency and high reliability LEDs.