The Pseudo-MOSFET measurements technique has been used for the electrical characterization of the nano SOL Silicon islands for the Pseudo-MOS measurements were fabricated by selective etching of surface silicon film with dry or wet etching to examine the effects of the etching process on the device properties. The characteristics of the Pseudo-MOS was not changed greatly in the case of thick SOI film which was 205 nm. However the characteristics of the device was dependent on etching process in the case of less than 100 nm thick SOI film. The sub 100nm SOI was obtained by thinning the silicon film of standard thick SOI. The thickness of SOI film was varied from 88 nm to 44 nm by chemical etching. The etching process effects on the properties of pseudo-MOSFET characteristics, such as mobility, turn-on voltage, and drain current transient. The etching process dependency is greater in the thinner SOI and related to original SOI wafer quality.

High performance SiGe heterostructure metal-oxide-semiconductor field effect transistors(MOSFETs) were fabricated using well-controlled delta-doping of boron and SiGe/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe MOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^1$. However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}\sim10^{-2}$ in comparion with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

Silicon(Si) nanowires have been grown by thermal chemical vapor deposition using the 20h ball-milled SiO powders under controlled conditions without the catalyst. For the synthesis of Si nanowires, $Al_2O_3$ substrates were used. Current-Voltage(I-V) and photoresponses were measured for the single Si nanowire in vacuum at room temperature. The light sources for these measurements were the 325 nm wavelength line from a He-Cd laser and the 633 nm wavelength line from a He-Ne laser. The intensity of the photoresponse is independent of the illumination time. And rise and decay times of the photoresponses are shorter than 1 sec.

Process diagrams of selective epitaxial growth of silicon(SEG) could be developed from CVD thermodynamics. They could not only be helpful with understanding of the mechanism, but also offer good processing guidelines in manufacturing high density devices. Through the process optimization skill, applications of SEG to high-density device structures could be possible without problems such as loading effect and facet generation, with producing outstanding electronic properties.

2 차원 MEDICI 시뮬레이터를 이용하여 CMOS 회로의 전기적 특성을 조사하였다. CMOS 인버터 회로는 LDMOSFET를 이용하였는데, LDMOSFET에서 전류 및 스위칭 특성에 많은 영향을 주는 곳은 채널이라고 생각되는데, 채널에서의 불순물 농도 변화에 의한 CMOS 회로의 voltage transfer특성, low input voltage($V_{IL}$), high input voltage($V_{IH}$)등을 조사하였다. LDMOSFET에서 N 채널의 농도는 $V_{IL}$에, P 채널의 농도는 $V_{IH}$에 많은 영향을 주었다.

ZnO 단일 나노선 field effect transistor (FET) 소자의 2단자 전류-전압 특성을 조사해 보면 n-type 반도체 특성이 나타남을 알 수 있다. 그러나 2단자로 측정 할 경우 반도체 나노선과 금속 전극사이에 존재하는 접촉저항의 영향이 필연적으로 포함된다. 따라서 측정한 결과가 나노선에 의해서 나타나는 고유한 특성인지 접촉저항의 원인이 되는 에너지 장벽의 성질인지 명확히 밝힐 필요가 있다. 그래서 이번 연구에서는 4단자 측정방법을 이용하여 접촉저항 성분을 배제한 소자의 고유한 성질을 밝혀낼 뿐만 아니라, 이것을 2단자의 결과와 비교함으로써 접촉점에서 나타나는 에너지 장벽의 특징도 파악해 낼 수 있었다. 실험에서 사용된 ZnO FET 소자의 경우, 접촉점에서 생기는 에너지 장벽을 터널링을 통해 극복하는 것으로 분석되었고 이는 온도 변화에 따른 4 단자 및 2 단자 전류-전압 측정을 통해 확인될 수 있었다.

Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a new material of PRAM with $Ge_1Se_1Te_2$. This material has been propose to solve the high energy consumption and high programming current. We have investigated the phase transition behaviors in function of various process factor including contact size, cell size, and annealing time. As a result, we have observed that programming voltage and writing current of $Ge_1Se_1Te_2$ are more improved than $Ge_2Sb_2Te_5$ material.

실리콘 기판 위에 100nm의 선폭을 갖는 선들이 일정한 간격을 가지고 연속적으로 배열되어 있는 구조를 형성시켜 보았다. PMMA가 코팅되어 있는 실리콘 기판위에 전자빔으로 패턴을 하였고, 건식에칭을 통해 구조물을 형성한 후 원자 현미경으로 관찰하였다. 이러한 나노구조물의 구현은 전자빔 패터닝시에 전자빔이 실리콘 기판에 충돌할 때 나타나는 backward scattering과 proximity 효과 등의 영향으로 인해 pitch의 크기가 작아질수록 구현하기가 쉽지 않았다. 화합물반도체 단일 나노선 소자를 제작하여 소자의 전기적 특성을 측정할 때, 나노선 표면에 있는 자연산화막은 금속전극과 나노선 사이의 전기전도특성을 저해하는 요소로 알려져 있다. 이러한 자연산화막을 제거하기 위해 나노선을 건식에칭해 보았고, 원자현미경을 통해 에칭에 따른 나노선의 모양변화를 관찰하였다.

고속 동작 다이오드를 제작하기 위해 Non punch trough 형 실리콘 pn 다이오드에 다양한 조건으로 양성자를 주입하고 조건에 따른 소자의 전류-전압 특성을 분석했다. 양성자 주입은 에너지를 2.32Mev, 2.55Mev, 2.97Mev 로 또, 각 에너지 조건에서 도즈를 $1\times10^{11}cm^{-2}$, $1\times10^{12}cm^{-2}$, $1\times10^{13}cm^{-2}$로 변화 시키며 수행했다. 분석 결과, 순방향 전류 5A에서 전압 강하는 1.1V로 주입하지 않은 최초 소자의 122%로 증가하였으며 역방향 항복전압은 양성자를 주입하지 않은 소자와 비슷한 값을 보였다. 소자의 역방향 회복시간은 50nsec로써 최초 소자의 20% 수준으로 감소했다.

Partially-depleted Silicon on insulator metal-oxide-semiconductor field- effect transistors (PD-SOI MOSFETs) with Silicon-germanium (SiGe) layer is investigated. This structure uses SiGe layer to reduce the kink effect in the floating body region near the bottom channel/buried oxide interface. Among many design parameters influencing the performance of the device, Ge composition is presented most predominant effects, simulation results show that kink effect is reduced with increase the Ge composition. Because the bandgap of SiGe layer is reduced at higher Ge composition, the hole current between body and SiGe layer is enhanced.

Infrared bolometer sensor's variation is detected by voltage drop between reference resistor and bolometer resistor in this architecture. One of the serious problems in this architecture is that these resistors value has a process variation. So common-mode level could be different from expectation in room temperature. Different common-mode level could lead to wrong output at the end of readout circuit. We suggest useful method to solve this problem. Difference correction using capacitor has reduced CM level difference to 86% for 1 $M\Omega$. bolometer and reference resistor's 10% variation.

In this paper, degradation in field-aged PV modules including degradation of interconnect, discoloration of encapsulant and hot spot have been observed and analyzed. From the results, photovoltaic module installed for 15 years shows around 13~20% drop of electrical properties due to the interconnect degradation and PV module passed 19 years has been found to drop of around 20% mainly by the encapsulant discoloration. Fill factor of the electrode oxidized photovoltaic module has been dropped by the amount of 6~10% due to the change of irradiance. It is because maximum voltage(Vmp) decreases according to the increase of irradiance.

Experimental results are presented for the degradation of 3 nm-thick gate oxide ($SiO_2$) under both Negative-bias Temperature Instability(NBTI) and Hot-carrier-induced(HCI) stresses using P and NMOSFETs that are annealed with hydrogen or deuterium gas at high-pressure (1~5 atm.). Statistical parameter variations depend on the stress conditions. We suggest that deuterium bonds in $SiO_2$ film is effective in suppressing the generation of traps related to the energetic hot electrons.

Ge 농도가 30%인 SiGe 위에 Ni-Pd 합금을 이용한 새로운 Ni-Germanosilicide의 방법을 제안하여 열안정성 향상에 대해 연구하였다. 새롭게 제안한 Ni-Pd 합금을 이용하여 3 가지 구조 (Ni-Pd, Ni-Pd/TiN, Ni-Pd/Co/TiN) 중 Cobalt 다층구조를 사용한 구조 (Ni-Pd/Co/TiN)가 면저항이 가장 낮고 안정한 silicide 특성을 갖는 것을 나타냈으며, 고온열처리 $700^{\circ}C$, 30분에서도 낮고 안정한 면저항 특성을 유지시켜 열안정성을 개선하였다.

Electrodes were fabricated on a single ZnO nanowire by photolithography process, metal evaporation, and lift-off. The slow photoresponses of the ZnO nanowire under the continuous illumination of 325nm-wavelength light (corresponding to above-bandgap excitation) indicate that the traps related to oxygen vacancy disturb the flow of electron in ZnO nanowire. The photoresponse and PL spectra were measured, and observed that the excitonic band in the PL spectrum was absent in the photoresponse.

100, 200nm 크기의 colloidal silica 각각에 나노 ceria 입자를 수열합성법으로 코팅하였다. Colloidal silica 입자에 ceria를 코팅 시 slurry의 pH조절과 수열처리에 이용하여 silica에 ceria가 코팅됨을 TEM과 zeta-potential을 이용하여 확인하였다. 연마 슬러리의 분산 안정성과 연마효율을 높이기 위하여 슬러리의 pH 는 9로 하였으며, 이때의 zeta-potential 값은 -25 mV이었다. 1 wt%로 제조된 연마슬러리를 이용하여, 4 inch $SiO_2$, $Si_3N_4$ wafer를 압력변화에 따른 연마특성을 관찰 하였다. Ceria coated colloidal silica 100 nm, 200 nm와 commercial한 $CeO_2$입자를 연마압력 6 psi로 oxide film을 연마한 결과 연마율이 각각 2490 ${\AA}/min$, 4200 ${\AA}/min$, 4300 ${\AA}/min$으로 측정되었다. 또한 $SiO_2$, $Si_3N_4$ film의 6 psi압력에서 ceria coated colloidal silica 100 nm, 200 nm와 commercial 한 $CeO_2$입자의 선택비는 3, 3.8, 6.7 이었다. 입자크기가 클수록 연마율이 높으며, Preston equation을 따라 연마 압력과 연마율이 비례하였다.

We have investigated the effect of the pad surface characteristics such as roughness, groove density and wear of pad on within wafer non-uniformity(WIWNU) in chemical mechanical polishing(CMP). We found that WIWNU increases as pad surface roughness($R_{pk}$; Reduced peak height) increases in an early stage of polishing. But after polishing time goes to a certain extent, WIWNU decreases as uniformity of pad surface roughness. Also, groove of pad has effect on relative pad stiffness although original mechanical properties of pad are unchanged by grooving. WIWNU decreases as relative pad stiffness decreases. In addition, conditioning process causes non-uniform wear of pad during in CMP. The profile of pad wear has a significant effect on WIWNU.

In this study, we proposed CMP micro-scratches generated by contaminative particle which existed on the wafer surface prior to CMP process. The CMP micro-scratches are one of the slurry abrasive related damage. To reduce the micro-scratches, research efforts have been devoted to the optimization of slurry abrasive size distribution. In addition of slurry abrasive, it was found that contaminative particles also were major CMP micro-scratch source.

본 연구에서는 Cu 슬러리에 부식방지제인 BTA를 첨가하여 슬러리내의 과수의 농도, pH 의 변화, 연마입자의 종류에 따라 연마거동에 미치는 영향과 각 chemical 변화에 따른 Cu surface의 변화를 살펴보았다. BTA (Benzotriazole, $C_6H_4C_3H$)를 첨가함으로써 본 연구에서 시행된 pH 와 과수의 변화에 상관없이 Cu-BTA film을 형성하여 Cu의 dissolution을 최대한 억제하는 것을 확인할 수 있었다. 또 그로인해 BTA를 첨가하지 않았을 때보다 얇은 passivation layer를 형성함을 알 수 있었고 contact angle도 더 높았다. 연마율의 경우에도 BTA가 첨가됨으로써 감소됨을 확인할 수 있었고 연마입자로 alumina particle을 사용한 경우에는 pH6, 과수 10vol%이상에서는 오히려 연마율이 증가하였다. fumed silica의 경우에는 hardness가 작아 mechanical적인 제거력이 낮아 BTA가 첨가되어도 연마율에는 큰 영향이 없었다.

Both $Al_2O_3$ and $SiO_2$ nanopowders were ball-milled to break large agglomerates$(500nm\sim10{\mu}m$). To improve the dispersion of ball-milled nanoparticles in transformer oil, surface modification was performed with oleic acid(OA). The modified nanoparticles were examined by the particle size analyzer, electron microscope, Infrared spectroscopy and stability analyser. Particle Size distributions were measured for ball-milled particles, and the results were compared with the size distribution of primary particles. FTIR results indicated that hydrophobicity of modified nanoparticles was due to the chemical reaction between hydroxyl groups of particle surface and oleic acid. The dispersion stability of surface-modified nanoparticles was quite good in transformer oil.

이번 연구는 $BCl_3/CF_4$ 플라즈마를 사용하여 반도체소자 제조 시 널리 이용되는 GaAs 계열반도체 중 대표적인 재료인 GaAs/AlGaAs 및 GaAs/InGaP 구조를 선택적으로 건식 식각한 후 분석한 것이다. 공정변수로는 ICP 소스파워를 0-500W, RIE 파워를 0-50W 그리고 $BCl_3/CF_4$ 가스 혼합비를 중점적으로 변화시켰다. $BCl_3$ 플라즈마만을 사용한 경우 (20$BCl_3$, 20W RIE power, 300W ICP source power, 7.5mTorr) 는 GaAs:AlGaAs의 선택비가 0.5:1 이었으며 이때 GaAs의 식각률은 ~2200${\AA}/min$ 이었으며 AlGaAs의 식각률은 ~4500${\AA}/min$ 이었다. 식각 후 표면의 RMS roughness은 < 2nm로 깨끗한 결과를 보여주었다. 15% $CF_4$ 가스가 혼합된 $17BCl_3/3CF_4$, 20W RIE power, 300W ICP source power, 7.5mTorr의 조건에서 3분 동안 공정한 결과 순수한 $BCl_3$ 플라즈마만을 사용한 경우보다 표면은 다소 거칠었지만 (RMS roughness: ~8.4) GaAs의 식각률 (~980nm/min)과 AlGaAs와 InGaP에 대한 GaAs의 선택도 (GaAs:AlGaAs=16:1, GaAs:InGaP=38:1)는 크게 증가하였다. 그리고 AlGaAs 및 InGaP의 경우 식각 시 나타난 휘발성이 낮은 식각 부산물 ($AlF_3:1300^{\circ}C$, $InF_3:1200^{\circ}C$)로 인하여 50nm/min 이하의 낮은 식각률을 보였고, 62.5%의 $CF_4$가 혼합된 $7.5BCl_3/12.5CF_4$플라즈마의 조건에서는 AlGaAs 및 InGaP에 대한 GaAs의 선택도가 각각 280:1, 250:1을 나타내었다.

한국형 고속철도시스템은 최고운행속도 350km/h로 주행하는 고속열차(시제열차 7량 편성)의 개발에 성공하여 현재 시운전 시험을 통해 신뢰성과 안정성을 검증하고 있다. 국내 기술로 새롭게 개발된 한국형 고속철도 시스템은 고속운행에 따른 엄격한 안전요구사항을 만족해야 하며, 특히 고속-대량의 수송수단으로서 승객의 안전을 최우선으로 하기 때문에 다른 어떠한 시스템보다 엄격한 안전확인 및 성능검증을 위한 철저한 시험평가 과정이 필요하다. 본 연구에서는 한국형 고속철도 시스템 개발에 적용한 안전설계 요건의 분석내용을 제시하고, 고속철도 차량시스템의 안전성능 요건을 입증하기 위한 성능시험 체계로서 구성품 시험, 완성차시험(단차 및 편성 시험) 및 시운전 시험으로 구분한 한국형 고속철도 차량시스템에 대한 성능시험기준안을 소개하고자 한다.

냉간 압연과 열처리 공정을 통해 2축 배향성을 가지는 금속 기판 위에 산화물 박막을 증착 시켜 같은 정도의 2축 배향성을 갖도록 제조된 RABiTS template 위에 YBCO 초전도체를 PLD 방법으로 증착하여 YBCO coated conductor 선재를 제조하였다. RABiTS template은 NiW/$Y_2O_3$/NSZ/$CeO_2$ 구조로 DC reactive sputtering와 PLD 방법에 의해 증착되었다. 모든 공정은 reel-to-reel 방식의 연속 공정으로 이루어졌다. 1m와 10m급의 장선 고온초전도선재를 제조하고, 이에 대한 전기적 특성과 초전도 및 다층 산화물 완충층에 대한 결정성, 표면 특성에 대한 분석을 수행하였다. 그 결과 1m 길이에서 end-to-end 107 A와 10.6m 길이에서 end-to-end 51A의 임계 전류를 획득하였다. 제조된 박막형 선재의 초전도 층과 다층의 산화물 완충층 모두 금속 기판의 결정성을 그대로 유지하면서, epitaxial하게 성장하였으며, 최종 YBCO의 in-plane FWHM 값은 > $9^{\circ}$를 유지 하였다.

$Y_2O_3$ film was directly deposited on Ni-3at%W substrate using DC reactive sputtering technique. Metallic yttrium was used for DC sputtering target and water vapor was used for oxidizing the deposited metallic Yttrium atoms on the substrate. The window of the water vapor turned out to be broad. The minimum partial pressure of water vapor was determined by sufficient oxidation of the $Y_2O_3$ film, and the maximum partial pressure of water vapor was determined by the non-oxidation of the target surface. As the sputtering power was increased, The deposition rate increased without narrowing the window. The fabricated $Y_2O_3$ films showed good texture qualities and surface morphologies. The YBCO film deposited directly on the $Y_2O_3$ buffered Ni-3at%W substrate showed $T_c$, $I_c$ (77 K, self field), and $J_c$ (77 K, self field) of 89 K, 64 A/cm and 1.l $MA/cm^2$, respectively.

In this paper, we investigated the quench characteristics of HTSC elements in the integrated three-phase flux-lock type SFCL according to fault types such as the single-line-to-ground fault, the double-line-to-ground fault, the line-to-line fault and the three-line-to-ground fault. The integrated three-phase flux-lock type SFCL was the upgrade version of the single-phase flux-lock type SFCL. The structure of the integrated three-phase flux-lock type SFCL consisted of three-phase flux-lock reactor wound on an iron core with the ratio of the same turn between coil 1 and coil 2 in each phase. When the SFCL is operated under the normal condition, the flux generated in the iron core is zero because the flux generated between two coils of each single phase is canceled out. Therefore, the SFCL's impedance is zero, and the SFCL has negligible influence on the power system. However, if a fault occurs in any single-phase among three phases, the flux generated in the iron core is not zero any more. The flux makes HTSC elements of all phases quench irrespective of the fault type, which reduces the current of fault phase as well as the current of sound phase. It was observed that the fault current limiting characteristics of the suggested SFCL were dependent on the quench characteristics of HTSC elements in all three phases.

The properties such as capacitance and resonant frequency are important in embedded capacitors. Accurate equivalent model is required to find these properties of embedded capacitor. In this paper, we investigate to analyze the properties of high-K embedded capacitor which was fabricated by Low Temperature Co-fired Ceramic (LTCC). Modeling based on partial element equivalent circuit (PEEC) method is performed using HSPICE circuit simulation. This modeling methodology can provide the good inspection of embedded capacitor to device engineer.

In this paper, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, $Pb[(Mn_{1/3},Nb_{2/3})_{0.07}(Zn_{1/3}Nb_{2/3})_a(Zr_{0.48}Ti_{0.52})_{1-0.07-a}O_3]$ ceramics were manufactured with the variations of PZN from 2 to 14mol% and their dielectric and piezoelectric properties were investigated. Sintering temperature was varied from 910 to $1000^{\circ}C$. At 8mol% PZN substituted specimen sintered at $970^{\circ}C$, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant and peizoelectric constant($d_{33}$) showed the optimal values of 0.536, 1803, 1551 and 328[pC/N), respectively, for multilayer piezoelectric transformer application.

Recently, a tiny piezoelectric linear motor using a vibration made of the transducer has been invented. The motor consists of a shaft, mobile element, and piezoelectric transducer using a piezoelectric radial mode bimorph disk. The fringe of the bimorph disk is fixed firmly which means this area has no degree of freedom. Therefore, the radial mode of the tranducer transfers to the flexurd mode. The mobile elements move along the shaft by the impact force generated by the flexurd mode of the piezoelectric transducer. The piezoelectric ceramic disks have thickness of 0.1 mm and diameter of 3.5 mm. The elastic disk is introduced between two disks of the ceramic, which has thickness of 0.1 mm and diameter of 3.8 mm. The fringe of the elastic disk is fixed by a brass cylinder which height is 1.2 mm. The Pyrex shaft is used which has diameter of 1 mm and height of 10 mm. The motors are operated at their resonant frequencies. The dynamic properties of the motor have been intensively measured and analyzed according to the applied voltage wave forms at the resonant frequencies. As the sawtooth and rectangular voltage waves are applied, the velocity, the thrust force, and the velocity dependence of the mobile position are measured. The dynamic characteristics are also analyzed within a period of each wave using laser vibrometer. The velocity of the mobile is moderately constant along the shaft. The better dynamic characteristics are obtained in the case of applying the rectangular wave.

The structural and electrical properties of the films are investigated as a function of nitrogen/argon ratio at room temperature and at various deposition temperatures. The phase changes as $Ta_2N$ or TaN in the films were observed as nitrogen/argon ratio increases from 3% to 25%. The phase changes were associated with a change in the resistivity and TCR (temperature coefficient of resistance) of the films. TCR values of the films deposited at room temperature and different nitrogen contents were negative, and strongly decreased with the increase in nitrogen/argon ratio. The Ta2N films deposited at nitrogen/argon ratio of 3% show improved TCR values and thermal stability with increasing deposition temperature. The $Ta_2N$ films grown at nitrogen/argon ratio of 3% and the temperature of $200^{\circ}C$ showed a TCR value of -47 $ppm/^{\circ}C$, which is close to near-zero TCR in the range of deposition temperature.

In this study, in order to develop multilayer piezoelectric actuator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3-Na_2CO_3$ as sintering aids and their piezoelectric and dielectric characteristics were investigated with the function of PNN substitution. With increasing PNN substitution, dielectric constant(${\varepsilon}r$), electromechanical coupling factor(kp), and piezoelectric d constant($d_{33}$) were increased at 10~12[mol%] PNN substitution and then decreased at all sintering temperature. With increasing PNN substitution, phase changed from tetragonal to rhombohedral at [10~12mol%] PNN substitution. At the 12[mol%] PNN substituted PMN-PZT composition ceramic sintered at 950[$^{\circ}C$], density, ${\varepsilon}r$, kp, $d_{33}$ and Qm showed the optimum value of 7.79[$g/cm^3$], 1160, 0.599, 419[pC/N) and 894, respectively for multilayer piezoelectric actuator application.

Low temperature ($\leq900^{\circ}C$) sintering piezoelectric ceramics $0.01Pb(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3-0.35PbTiO_3-0.23PbZrO_3+0.1wt%Y_2O_3+xwt%ZnO$ $(0{\leq}x{\leq}2.5)$ have been developed and investigated. The electromechanical coupling coefficient ($k_p$), piezoelectric constant ($d_{33}$), and mechanical quality factor ($Q_m$) have been measured to characterize the piezoelectric materials system. When 2.0 wt% ZnO is added, the properties of the system, $d_{33}$ = 559 pC/N, $k_p$ = 55.0 % and $Q_m$ = 73.4 are obtained which are very suitable for piezoelectric actuators. A bending mode multilayer actuator has been also developed using the materials which size is $27(L)\times9(W)\times1.07(t)mm^3$. The actuators are fabricated by multilayer ceramic (MLC) process and consist of24 layers and each layer thickness is $35{\mu}m$. At this time, the displacement of actuator was $100{\mu}m$ at 28V.

The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 6FDA and ODA. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2$/Vs, threshold voltage of -0.8 V and on-of current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.

In this paper, the simulation of the n-p-n-p layer stacked color detector is presented. A color detector based on vertically integrated structures of silicon can overcome color moire or color aliasing effect. The color detector is designed to separate the fundamental chromatic components at each junction and exhibits maxima of the spectral sensitivity at red, green, and blue region, respectively. From this result, it is observed that the spectral response can be controlled by the doping concentration and structure of the devices.

Organic Light Emitting Diodes are attractive as alternative display components because of their relative merits of being self-emitting, having large intrinsic viewing angle and fast switching speed. But because of their relatively short history of development, much remains to be studied in terms of their basic device physics and design, manufacturing techniques, stability and so on. We invested electrical properties of N, N-diphenyl-N, N bis (3-methyphenyl)-1, 1'-biphenyl-4, 4'-diamine and tris-8-hydroxyquinoline aluminum when their thickness were changed variedly from 3:7 to 7:3 of their thickness ratios. And we also studied their optimal thickness respectively.

We coupled fluid balance equation and director balance equation from Ericksen-Leslie's continuum theory and observed the motion of Twisted Nematic (TN) Liquid Crystals. We simulated flow velocity distribution and director distribution. We interpreted the dynamic response characteristic caused by the flow. As the result of the simulation, We could see the flow effect. And this flow caused abnormal twist to 4msec in switching off state. We could prove that this abnormal twist is a direct cause of optical bounce phenomenon known well until now with the result of simulation.

In this paper, the circuit models of optical to electrical(O/E) characteristics of waveguide photodiode(WGPD) submodule are examined. Test structures of WGPD and WGPD submodule were fabricated and S21 parameter was measured to characterize the O/E conversion property. Valid circuit models were derived by RF circuit simulation and O/E characteristics were modeled to analyze the effects of model parameters on the WGPD submodule performances. Based on the results, it can be concluded that the suggested WGPD submodule model can explain the characteristics of the O/E conversion of WGPD submodule, where the parasitic components originated from ribbon bonding block crucially influence on the performance of WGPD submodule, are able to show more efficient property by making compact bonding structure. We propose an effective WGPD submodule bonding structure and it can ensure the 40Gbps operation of WGPD.

본 논문에서는 두 개의 오목 반사경으로 형성된 광 공동 구조의 비문산 적외선 (NDIR) 가스센서를 제작하였다. 증폭비는 18,000 배, 램프 off 시간은 3초로 일정하게 하고 펄스 modulation 시간을 200ms에서 600ms까지 변화시켰을 때. 300ms에서 가장 효율적인 출력신호를 확보할 수 있었다. 그리고 $5^{\circ}C$에서 $45^{\circ}C$까지 $10^{\circ}C$ 간격으로 온도를 변화시키면서 이산화탄소의 농도를 0ppm에서 2000ppm까지 증가시켰다. 이때, 약 400mV의 전압변화가 있었다. 온도가 상승함에 따라 0ppm에서의 출력전압은 감소하는 양상을 나타내었다. 또한 온도변화 대비 출력특성과의 상관성 해석을 통하여 온도 보상 방법을 고안하였으며, 본 연구에서 제작한 센서모듈의 응답시간은 약 30초였다.

생명체의 근육을 구성하는 근섬유와 마찬가지로 나노선 구동기는 불규칙적으로 엉켜있는 나노선들의 집합으로 이루어져 있으며, 기존의 강유전체에 기반을 둔 구동기에 비해 낮은 구동전압과 높은 일률을 가진다. 대표적인 나노선인 MWCNTs(Multi-walled Carbon Nanotubs)와 $V_2O_5$ 나노선을 이용한 구동기는 이미 각각 시현된 바 있으나, 이 둘의 이종접합을 통한 구동기는 아직까지 보고되지 않았다. 본 연구에서는 탄소나노튜브와 $V_2O_5$의 이종접합을 통해 필름 형태의 구동기를 구현하여 각각의 나노선 만을 이용했을 때보다 월등한 성능을 보여주는 구동기를 구현하였다. 향후 실용화 가능성을 염두에 두어, 보다 강건하고 최적화된 나노선 sheet의 합성과 구동기의 구조적 향상이 이루어진다면 그동안 알려진 그 어떤 물질보다도 우수한 구동특성을 보여줄 것이라 예상된다.

In case of attaching thermoelectric module and heat source, the polymer sheet is attached on the $Al_2O_3$ plate, which is cooling side of thermoelectric module, in order to enhance mechanical safety of the system. It is impossible to calculate the exact distribution of temperature and flow pattern of inner gap of thermoelectric module. Therefore CFD analyses was executed to determine the thermo-fluid phenomena and distribution by Fluent. As the result of these analyses, heat transfer was dominated by conduction and the difference of temperature was linear distribution according to the thickness of polymer sheet.

AAO(Anodic Aluminum Oxide)는 양극산화 방법을 이용하여 얻을 수 있는 알루미늄의 다공성 산화막이다. 기존의 방법에서는 DC전압을 이용하여 AAO를 성장시켰는데 본 연구에서는 AC전압을 이용하여 AAO의 성장 특성을 제어하였다. 전압원으로 DAQ를 사용하였는데 출력전압을 증폭하기 위하여 2 단 차동증폭기를 제작하였다. 실험 결과는 AAO 기판의 SEM 사진을 촬영, 분석함으로써 얻을 수 있었다. SEM 시진을 분석한 결과 pore size는 전압의 변화에 큰 영향을 받지 않음을 알 수 있었던 반면 성장 길이는 AC전압의 주기가 증가함에 따라 길어지는 성향을 확인할 수 있었다. 또한 주기와 AAO 성장 길이와의 관계를 로그스케일 그래프로 나타내보면 선형적인 특성을 나타내었다. 이를 통해 인가한 전압의 주파수에 따라 AAO의 성장 길이를 예측할 수 있었다.

Electron energy distribution functions and plasma parameters such as electron temperature ($T_e$) and electron density ($n_e$) in low-pressure Cl-based plasmas have been measured. As the $Cl_2/A4$ gas mixing ratio, the $BCl_3$ gas addition and the process pressure increases, the electron energy probability and the electron temperature decreases. In case of source power increases, electron energy probability increases, whereas the electron temperature was not related.

Cu metallization using electrochemical plating(ECP) has played an important role in back end of line(BEOL) interconnect formation. In this work, we studied the optimized copper thickness using Bottom-up Gap-fill in Cu ECP, which is closely related with the pattern dependencies in Cu ECP and Cu dual damascene process at 0.13 ${\mu}m$ technology node. In order to select an optimized Cu ECP thickness, we examined Cu ECP bulge, Cu CMP dishing and electrical properties of via hole and line trench over dual damascene patterned wafers split into different ECP Cu thickness.

나노 구조 제작을 위한 다양한 시도 중 블록 공중합체를 이용한 방법은 현재 활발한 연구가 진행되고 있는 분야이다. 본 연구에서는 비휘발성 메모리 소자의 용량 증가를 위하여 블록 공중합체 박막을 나노 마스크로 이용하고, 평행판헝 반응관 내에서 반응성 이온 에칭을 사용하여 나노 구조의 표면을 제작하였다. 에칭동안에 나노 마스크로서 사용할 블록 공중합체 박막은 PS-b-PMMA를 이용하여 제작하였고, UV를 주사하여 PMMA를 제거하고 수직적인 나노 흩을 구성하여 나노 패터닝이 가능하도록 하였다. 실험을 통하여 매우 균일한 나노 바늘 형태의 구조를 생성할 수 있으며, 반응기체와 유량의 조절을 통하여 다양한 표면 구조를 확인할 수 있었다. 블록 공중합체는 나노 마스크로서 뛰어난 기능을 나타내며, 이를 이용하여 나노 사이즈의 패터닝이 가능하고, 표면적 증가를 통하여 비휘발성 메모리 소자의 용량 증가에 기여할 수 있다.

양성자 조사법에 의하여 고속 전력용 다이오드를 제작하기 위하여 punch-through 다이오드에 다양한 조건으로 양성자를 조사하였다. 동일한 소자에 전자선을 조사한 소자와 속도 향상을 위한 공정이 행하여지지 않은 동일한 소자 각각의 특성을 비교 분석하였다. 양성자 주입은 주입 에너지를 1 MeV 와 1.3 MeV로, 각 에너지 조건에서 도즈를 $1\times10^{12}cm^{-2}$, $1\times10^{13}cm^{-2}$로 변화 시켰다. 분석 결과 양성자 주입된 소자에서 역방향 회복시간은 최소 소자의 약 45%, 전자선이 조사된 소자에 비하여 약 73 %의 값으로 향상시킬 수 있었으며 역방향 항복 전압과 순방향 저항은 처리되지 않은 소자와 전자빔이 조사된 시편들의 값과 비슷한 값을 나타내었다.

Reliability of the thyristor has a major effects on the high power systems such as HVDC, SVC and FACTs, etc. Therefore, analyzing method for thyristor aging is important to improve the stability of thyristor and high power systems. In this paper, we explain the analyzing method for examine the thyristor aging effect. And also, the thyristor aging experiments were performed to investigate the characteristic degradation due to the aging.

SiC lateral power semiconductor device has high breakdown voltage and low on-state voltage drop due to the material characteristics. And, because the high breakdown voltage can be obtained, RESURF technique is mostly used in silicon power semiconductor devices. In this paper, we presents the electrical characteristics of the 4H-SiC RESURF LDMOSFET as a function of the epi-layer length, concentration and thickness. 240~780V of breakdown voltage can be obtained as a function of epi-layer length and thickness with same epi-layer concentration.

본 논문에서는 Nd:YAG($\lambda$=266 nm, pulse) 레이저빔을 PDMS 표면에 조사하여, 소수성 물질인 PDMS를 친수성 물질로 개질하였다. 이미 산소 플라즈마를 이용한 것과 오존을 이용한 PDMS 표면 개질에 관한 논문이 발표되었는데, 레이저를 이용한 표면 개질은 간단한 레이저 빛의 조사만으로 표면을 개질할 수 있는 장점이 있다. 본 논문에서는 레이저를 이용하여 PDMS 를 표면처리한 후에 접촉각 측정기를 이용해서 측정한 결과 접촉각 감소가 있었다. 묘면에 산소 함유량이 증가한 것을 확인함으로써 친수성 물질로의 표면 개질됨을 확인할 수 있었다.

The impact ionization MOS (I-MOS) transistor with 50nm channel length is presented by using 2-D device simulator ISE-TCAD. The subthreshold slope cannot be steeper than kT/q since the subthreshold conduction is due to diffusion current. As MOSFETs are scaled down, this problem becomes significant and the subthreshold slope degrades which leads an increase in the off-current and off-state power dissipation. The I-MOS is based on a gated p-i-n structure and the subthreshold conduction is induced by impact ionization. The simulation results show that the subthreshold slope is 11.7 mV/dec and this indicates the I-MOS improves the switching speed and off-state characteristics.

Au and $Au/SiO_2$ nanoparticles(NPs) were synthesized by the colloidal method. The formation of Au and $Au/SiO_2$ NPs was confirmed using high resolution transmission electron microscopy (HRTEM). Synthesized solutions were deposited on Si wafer. The electrical properties of structures were measured using a semiconductor analyzer and a LCR meter. Capacitance versus voltage hysterisis curves showed the charge storage effect by Au and $Au/SiO_2$ NPs.

Cadmium sulphide (CdS) films have been prepared on polycarbonate (PC), polyethylene terephthalate (PET), and Coming 7059 substrates by r.f. magnetron sputtering technique at room temperature. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the influence of the sputter power on the structural and optical properties of these films was evaluated.

It is well known that the efficiency of photovoltaic modules decreases with an increase of temperature. In this paper, both efficiency and maximum power(Pm) variation with temperature are investigated using numerical simulation. Various carrier transport mechanisms and several recombination parameters of all the cell materials are taken into account. The theoretical result are compared with the reference data and they are shown to agree quite well over a wide range of temperatures.

Sufficient removal rate with adequate selectivity to realize the pattern mask of tetra-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained by chemical mechanical polishing (CMP) with commercial silica slurry as a function of pH variation. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible.

In this paper, we formed the shallow junction by preamorphization and low energy ion implantation. And a simulator is designed for predicting the annealing process results. Especially, if considered the applicable to single step annealing process(RTA, FA) and dual step annealing process(RTA+FA, FA+RTA). In this simulation, the ion implantation model and the boron diffusion model are used. The Monte Carlo model is used for the ion implantation. Boron diffusion model is based on pair diffusion at nonequilibrium condition. And we considered that the BI-pairs lead the diffusion and the boron activation and clustering reaction. Using the boundary condition and initial condition, the diffusion equation is solved successfully. The simulator is made ofC language and reappear the experimental data successfully.

PRAM (Phase Change Random Access Memory) is well known to use reversible phase transition between amorphous (high resistance) and crystalline (low resistance) states of chalcogenide thin film by electrical Joule heating. In this paper, we introduce a stack-type PRAM device with a novel GST/TiAlN structures (GST and a heating layer of TiAlN), and report its electrical switching properties. XRD analysis result of GST thin film indicates that the crystallization of the GST film start at about $200^{\circ}C$. Electrical property results such as I-V & R-V show that the phase change switching operation between set and reset states is observed, as various input electrical sources are applied.

An alumina membrane with nano-sized pore array by anodic oxidation using thin film aluminum deposited on silicon wafer was fabricated. It is important that the sample prepared by metal deposition method has a flat aluminum surface and a good adhesion between the silicon wafer and the thin film aluminum. The oxidation time was controlled by observation of current variation. While the oxalic acid with 0.2M was used for low voltage anodization under 100V, the chromic acid with 0.1M was used for high voltage anodization over 100V. The nano-sized pores with diameter of 60~120nm was obtained by low voltage anodization of 40~90V and those of 200~300nm was obtained by high voltage anodization of 120~160V. Finally, the sample was immersed to the phosphoric acid with 0.1M concentration to etching the barrier layer. The sample will be applied to electronic sensors, field emission display, and template for nano-structure.

We investigated the effect of a Ta/TaN Cu diffusion barrier existence on the reliability and the electrical performance of Cu dual-damascene interconnects. A high EM performance in Cu dual-damascene structure was observed the BCV(barrier contact via) interconnect structure to remain Ta/TaN barrier layer. Via resistance was decreased DCV interconnect structure by bottomless process. This structure considers that DCV interconnect structure has lower activation energy and higher current density than BCV interconnect structure. The EM failures by BCV via structure were formed at via hole, but DCV via structure was formed EM fail at the D2 line. In order to improve the EM characteristic of DCV interconnect structure by bottomless process, after Ta/TaN diffusion barrier layer in via bottom is removed by Ar+ resputtering process, it is desirable that Ta thickness is thickly made by Ta flash process.

Recently semiconductor devices are required more smaller scale and more powerful performance. For smaller scale of device, multilayer structure is proposed. And, for the higher performance, interconnection material is change to copper, because copper has high EM(Electro-migration)and low resistivity. Then copper CMP process is a great role in a multilayer formation of semiconductor. Copper process is different from aluminum process. ECP process is one of the copper processes. In this paper, we focused on the defects tendency by copper thickness which filled using ECP process. we observed hump high and dishing. Conclusively, hump hight reduced at copper thickness increased Also dishing reduced.

UV-curable pressure sensitive adhesives were prepared by blending acrylic copolymer, copolymerized with butyl acrylate (BA), acrylic acid (AA) and vinyl acetate (VAc) by solution polymerization, triethyl amine (TEA) and trimethylolpropane triacrylate (TMPTA). The PSAs were evaluated by peel strength with varying contents of TMPTA and UV dose, and also glass transition temperature($T_g$) of PSAs were measured. When exposed on UV irradiation, the PSAs showed the decreased peel strength and increased $T_g$. And following UV irradiation, the PSAs did not leave any residue on wafer after peel off PSA.

The electrical stress has a major effect on the long-term reliability of the thyristor. Therefore, it is needed to analyze the relationship between reliability and stress. In this paper, we investigate the device failure mechanism which induced by the stress. And also investigate the effect of the thermal stress on the device failure and relationship between electrical and thermal stress. Two-dimensional process simulator ATHENA and device simulator ATLAS are used to analyze the failure mechanism of the device.

In this paper, the capacitance properties of degraded thyristor with temperature and voltage were presented. As degraded thyristor, 8 thyristors with each other different reverse blocking voltage used. Its impedance and resistance properties were measured from frequency 100Hz to 10MHz applied with bias voltage from 0V to 40V. As a result, at low frequency region, that is, at the frequency 100 - 10kHz, the abrupt increasement of its capacitance was confirmed. And also, at high frequency region, the capacitance peak move toward low frequency in the region of frequency 4 - 6MHz as degradation of thyristor.

When Power MOSFET is operated, it causes lots of heat, which influences negatively on the characteristics of the devices and shorten the lifespan of them. Therefore, a heat sink should be mounted on to emit the heat. In this experiment, we've found the changes of the characteristics of Thermal Transient of MOSFET when a heat sink is applied. In addition, we've found other changes when heat sink compound is applied as well.

HDL(Hardware Description Language) is the most important modem tools used to describe hardware, and becomes important as we move to higher levels of abstraction. The HDL has been made brisk use of in analog design, MEMS device[1-2], process related field as well as digital design. The most important characteristics of HDL is Abstraction which is the strongest tool that extend greatly designer's design ability. In this paper by the Modelling Continuum with hierarchical structure of abstraction, we apply UML(Unified Modeling Language) to SoC Design with HDL UML makes an easy and visual description of the various levels of abstraction, and gives designers good flexible modeling capabilty for SoC Design.

The photocurrent characteristics of CdTe/HgTe/CdTe structured nanoparticles are studied. CdTe/HgTe/CdTe multilayer structured nanoparticles were synthesized by colloidal method. CdTe/HgTe/CdTe multilayer structured nanoparticles were characterized by x-ray diffraction, high-resolution transmission electron microscopy(HRTEM), absorbance and photoluminescence(PL). PL spectrum of CdTe/HgTe/CdTe multilayer structured nanoparticles exhibits a strong exciton bond in the near infrared range. The I-V curves and photoresponses revealed that CdTe/HgTe/CdTe multilayer structured nanoparticles are very prospective materials for the photodetectors.

To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. At sputtering process of ZnO thin films, substrate temperature, work pressure respectively is $300^{\circ}C$ and 5.2 mTorr, and the purity of target is ZnO 5N. The thickness of ZnO thin films was about $1.9{\mu}m$ at SEM analysis after sputtering process. Phosphorus (P) and arsenic (As) were diffused into ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and $700^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is $700^{\circ}C$, 3hr. Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

Recently, MIM(metal-insulator-metal) capacitor is one of the essential device for DRAM device. In this thesis, $Al_2O_3$ thin film which has a relatively high dielectric constant was deposited by ALD(atomic layer deposition) using MPTMA and $H_2O$ source. Deposition temperature of $Al_2O_3$ thin film was $200^{\circ}C$ and its thickness was 300 ${\AA}$. $RuO_2$ bottom electrode was deposited by RF-magnetron sputtering using $RuO_2$ target. The physical characteristics of $Al_2O_3$ films were investigated by AES, TEM and Ellipsometry. Electrical characteristics were analyzed by C-V and I-V measurement.

Cadmium sulphide (CdS) films have been prepared on polycarbonate (PC), polyethylene terephthalate (PET), and Coming 7059 substrates by r.f. magnetron sputtering technique at room temperature. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the effect of the sputter pressure on the structural and optical properties of these films was evaluated.

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability and efficient heat-sink design. In this paper, thermal distribution of the Insulated Gate Bipolar Transistor Module has been studied with different conditions and heat sink materials. For analysis of thermal distribution, we obtained results by using finite element simulator, Ansys.

Thyristor breakdown voltage variation acceleration aging test was investigated. The breakdown voltage was deceased after 1000 hours acceleration aging test. It temperature rising caused by electric field concentration at the edge beveling region of the thyristor was confirmed using Silvaco device simulation. The local temperature rising is driving force for the defect propagation. Consequently, propagated defects of the beveling region seems to decrease thyristor's breakdown voltage.

ZnO films were deposited on MgO substrates (ZnO/MgO) by ultrasonic spray pyrolysis. Substrate temperature varied from $250^{\circ}C$ to $350^{\circ}C$. The crystallographic properties and surface morphologies of the ZnO/MgO films were studied by X ray diffraction and scanning electron microscopy. The properties of photoluminescence (PL) for the films were investigated by dependence of PL spectra on the substrate temperature and the annealing temperature. The ZnO/MgO films prepared at $350^{\circ}C$ showed the strongest UV emission peak at 18 K and 300 K among the films in this study.

원자층 증착 (atomic layer deposit : ALD) 방식으로 증착한 $Al_2O_3$의 건식식각 특성을 연구하였다. 전자 싸이클로트론 공진 (electron cyclotron resonance : ECR) 방식의 건식식각장치에서 source power, bias power, 압력 그리고 $Cl_2$ 가스를 변수로 하여 $Al_2O_3$의 식각속도와 Poly-Si 의 $Al_2O_3$에 대한 선택비를 측정하였다. bias power가 감소할수록 그리고 압력이 증가할수록 $Al_2O_3$의 식각속도는 감소하였고 Poly-Si 의 $Al_2O_3$에 대한 선택비는 증가하였다. 이 특성을 이용하여 TiN/$Al_2O_3$/Poly-Si 구조의 캐패시터와 Periphery 회로영역의 레지스터를 $Al_2O_3$를 식각 정지막으로 이용하여 구현하였다.

MOS capacitors were fabricated to study electrical and chemical properties of Ta-Mo metal alloy with $ZrO_2$. The work function of Ta-Mo alloy were varied from 4.1eV to 5.1eV by controlling the composition. When the atomic composition of Mo is 10%, good thermal stability up to $800^{\circ}C$ was observed and work function of MOS capacitor was 4.1eV, compatible for NMOS application. But pure Ta exhibited very poor thermal stability. After $600^{\circ}C$ annealing, equivalent oxide thickness of tantalum gate MOS capacitor was continuously decreased. Barrier heights of Ta-Mo alloy and pure metal that supported the work function values were calculated from Fowler-Nordheim analysis. As a result of these electrical?experiments, Ta-Mo metal alloy with $ZrO_2$ is excellent gate electrode for NMOS.

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75$[{\AA}/min]$. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

Singlewalled carbon nanotubes are largely synthesized on Fe-Mo/MgO catalysts by catalytic decomposition of CH4 in H2. Raman data revel that the as-prepared SWNTs have a diameter of about 0.7-1.2nm. It is found that the diameter of the as-prepared SWNTs can be controlled mainly by adjusting the molar ratio of Fe-MO versus the MgO support. The experimental results was documented with scanning electron microscopy(SEM), X-ray Diffractometer(XRD) and Raman spectroscopy.

The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.

본 연구에서는 RF 플라즈마 화학기상증착 장비를 사용하여 동일조건에서 합성된 100 nm 두께의 DLC박막을 RTA 장비를 사용하여 $N_2$ 분위기로 여러 가지 온도에서 ($300\sim900^{\circ}C$) 후열처리된 DLC 박막들의 마찰특성 변화를 AFM (Atomic Force Microscopy)의 FFM (Friction Force Microscopy) 모드를 사용하여 관찰하였다.

실온에서 디스플레이 응용을 위하여 ICP CVD로 PET기판 위에 실리콘 산화 반사 방지막을 성장시키고, EDXA로 분석하였다. 분광 Ellipsometer, UV-V와 FTIR분광기를 이용하여 반사율을 3%이하까지 낮출 수 있다는 것을 확인하였고, SEM장비를 이용하여 표면 상태를 알아보았으며. Essential Macleod 광학디자인 프로그램을 이용한 시뮬레이션 결과와 일치함을 확인하였다. 본 연구결과를 이용하면 다층박막 대신 단층 반사방지막을 제작하여 경제적이고, 효과적인 반사방지막을 제작할 수 있다.

Generally when Power MOSFET is operated, a heat sink is attached to it to emit heat caused by the operation. As the surface area of a heat sink is smaller, the thermal impedance is larger, which causes a negative influence on the characteristics of the chips and the devices and shortens the lifespan of them. In this experiment, we've compared and analysed different effects of heat sinks with 5 different surface areas on the characteristics of Thermal Transient when they are applied respectively.

The electronic state of ZnO doped with Y was calculated using the density functional theory. In this study, the program used for the calculation on theoretical structures of ZnO and doped ZnO was Vienna Ab-initio Simulation Package (VASP), which is a sort of pseudo potential method. The detail of electronic structure was obtained by the descrite variational $X\alpha$ (DV-$X\alpha$) method, which is a sort of molecular orbital full potential method. The optimized crystal structures obtained by calculations were compared to the measured structure. The density of state and energy levels of dopant elements was shown and discussed in association with optical properties.

Initial growth stage was investigated for SiC homoepitaxial film growth using 'step controlled epitaxy' technique. When the off angel direction is located parallel along to the gas flow direction, the smoother surface can be obtained. On the on axis substrates, selective etching was detected both the etching and growth condition. It was deduced that the high ratio of C/Si in the source gas results in well developed steps and etched spiral around micropipes.

PDMS는 생명공학 분야에서 중요한 기술적 폴리머이다. Nd:YAG레이저의 4고조파 ($\lambda$=266nm, pulse) 레이저를 사용하여 표면 처리를 하여 PDMS 표면의 습윤성과 접착성의 향상됨을 확인하였다. 식각한 PDMS는 샘물체의 미세회로에 사용될 수 있다. 본 논문은 레이저 빔의 주사속도를 변화시키며 PDMS를 레이저로 식각하며 PDMS의 식각 특성을 연구한다 식각 특성을 의존성이 가장 효과적인 주사 속도에 대한 의존성을 규명하고자 스테이지 컨트롤러의 속도를 변화시키며 실험하였다. 그리고 최적의 레이저 출력값을 알아내려고 레이저 출력값을 조절하며 실험 하였다. 단차측정기(알파스템)을 이용하여 식각형상과 식각 효율 등을 분석하였다.

ESD(Electrostatic Discharge) 보호에 응용되는 소자는 ESD가 발생했을 때, 빠르게 턴-온되어 외부로부터 EOS(Electric OverStress)를 차단함으로서 집적회로 내부의 코어를 보호해 주어야 한다. 이러한 기능에 충실한 LVTSCR(Low-Voltage Silicon Controlled Rectifier)은 트리거링 전압을 기존의 SCR보다 낮추어 ESD에 대해 민감한 반응을 할 수 있도록 개선한 소자이다. 그러나 트리거링 전압을 낮추면서 래치업 전압 또한 낮아지는 특성이 trade-off 관계로 맞물려 있어, LVTSCR의 단점인 낮은 래치업 전압을 효과적으로 다루는 것이 큰 이슈가 되고 있다. 본 논문에서는 LVTSCR의 ESD 보호에 대한 응용시 발생 가능한 래치업을 차폐하는 회로적 방법을 제시하였다. 제시된 새로운 구조의 차폐회로는 LVTSCR에서 래치업이 발생했을 때, 천이 전류를 감지하여 래치업이 발생되는 소자에 대한 전원을 스스로 차폐시켜 래치업에 대한 안정성을 시뮬레이션으로 검증하였다.

비냉각형 적외선 검출 회로 설계 시 공정상 변화에 의해 발생하는 센서의 저항값 변동이 크다. 본 논문에서는 이것을 해결하기 위해 차동적 입력 수신 구조를 이용한 방법을 제시하였다. 볼로미터 타입 비냉각형 적외선 영상 센서 회로는 입사된 적외선 에너지 양에 따라 센서의 저항값이 변하는 특성을 이용하며 그에 따른 전압 또는 전류의 변화를 측정하여 적외선의 파장을 알아내는 방식으로 검출회로 설계 시 가장 큰 문제점인 공정상의 변화 등으로 인한 신호검출 회로의 오동작을 개선하기 위하여 검출회로의 입력단을 차동적으로 받아들이도록 설계하였다.

In this paper. a new small size Lateral Trench Electrode Power IGBT is proposed. The entire electrode of proposed LIGBT is placed in trench oxide. The forward blocking voltage of the proposed LIGBT is improved by 1.6 times with that of the conventional LIGBT. The forward blocking voltage of proposed LIGBT is 500V. At the same size. a increase of the forward blocking voltage of about 1.6 times relative to the conventional LIGBT is observed by using TMA-MEDICI which is used for analyzing device characteristics. Because the electrodes of the proposed device are formed in trench oxide. the electric field in the device are crowded to trench oxide. We observed that the characteristics of i the proposed device was improved by using TMA-MEDICI and that the fabrication of the proposed device is possible by using TMA-TSUPREM4.

Intrinsic gettering is usually used to improve wafer quality which is an important factor for reliable ULSI devices. The two-step annealing method was adopted in order to investigate interactions between oxygens and secondary defects during oxygen precipitation process in lightly and heavily boron doped silicon wafers with high energy $^{11}B^+$ ion implantation. Secondary defects were inspected nearby the projected range by high resolution transmission electron microscopy. Oxygen pileup was measured in the vicinity of the projected range by secondary ion mass spectrometry for heavily boron doped silicon wafers.

The characteristics of GaN epitaxial layers grown on silicon (111) substrates by metalorganic vapor phase epitaxy have been investigated. The only control of AlN thickness was found to decrease the stress sufficiently for avoiding crack formation in an overgrown thick ($2.6{\mu}m$) GaN layer. X-ray diffraction and photoluminescence measurements are used to determine the effect of AlN thickness on the strain in the subsequent GaN layers. Strong band edge photoluminescence of GaN on Si(111) was observed with a full width at half maximum of the bound exciton line as low as 17meV at 13K.

본 논문에서는 탄소나노튜브를 성장시키기 전 과정인 전처리시 촉매 층에 인가되는 마이크로웨이브 파워에 따른 탄소나노튜브의 성장 및 특성 변화를 관찰하였다. 촉매층으로 사용되는 Ni층과 adhesion층으로 사용되는 Ti층은 마그네트론 스퍼터링 방식으로 증착하였고, 탄소나노튜브 성장에는 마이크로웨이브 플라즈마 화학기상 증착기를 사용하였다 탄소나노튜브의 성장특성은 평면과 단면 SEM image를 통하여 관찰하였으며, Raman spectrometer 분석을 통하여 성장된 탄소나노튜브의 구조적 특성을 알아보았다.

The reverse breakdown voltages of 4H-SiC SBD(schottky barrier diode)s with FP(Field Plate) and/or FLR(Field Limiting Ring) as a edge termination, were investigated. The breakdown voltages of SBDs with FP ware investigated varying the overlap width from $1{\mu}m$ to $30{\mu}m$. The maximum average breakdown voltages was 475V. There is no significant changes for the devices with overlap width of between $5{\mu}m\sim30{\mu}m$. It was confirmed that the dielectric breakdown of the thin thermal oxide is main cause of device failure. However, the breakdown voltage of SBD with FLR was 1400V even though the FLR edge termination structure was not optimized.

By the high-temperature pad conditioning process: The slurry residues in pores and grooves of the polishing pad were clearly removed. These clear pores and enlarged grooves made the slurry attack the oxide surface. The changed slurry properties by high-temperature pad conditioning process made the oxide surface hydro-carbonate to be removed easily.

In recent years, as the needs of MOS's a high quality is desired to get the superior electrical characteristics and reliability on MOSFET. As an alternative gate dielectric have drawn considerable alternation due to their superior performance and reliability properties over MOSFET, 2'nd silicidation formation process has been proposed as a dielectric growth/annealing process. In this study the author observed process characteristics on MOS structure. In view points of the process characteristics of MOS capacitor, the oxygen & polysilicon was analyzed by SIMS analysis on l'st & 2'nd Ti process, the oxygen and Si2 contents[Count/sec] of 1.5e3 & 3.75e4 on l'st process and l.1e3 & 2.94e4 on 2'nd process, the Ti contents' of 8.2e18 & 6.5e18 on 1'st and 2'nd process. The sheet resistance[$\Omega/sq.$] was 4.5 & 4.0, the film stress[dyne/cm 2] of 1.09e10 & 1.075e10 on l'st and 2'nd process. I could achieved the superior MOS characteristics by 2'nd silicidation process.

본 논문에서는 p-type (100)Si. (100)MgO 그리고 MgO/Si 기판 위에 RF Magnetron sputtering 법으로 $Ba_{0.5}Sr_{0.5}TiO_3$(BST) 박막을 증착 후 $600^{\circ}C$ 의 질소분위에서 RTA(Rapid Thermal Annealing)를 이용한 1 분간의 고온 급속열처리를 하였다. XRD 측정결과 모든 기판에서 (110) $Ba_{0.5}Sr_{0.5}TiO_3$의 주피크가 관찰되어졌고, 열처리 후 피크 세기가 증가함을 확인할 수 있었다. C-V 특성에서 각각의 기판에서 측정된 커패시턴스 값으로 계산된 유전율은 120(bare Si), 305(MgO/Si) 그리고 310(MgO)이었다. 누설 전류 특성에서는 150KV/cm이내의 인가전계에서 0.1$uA/cm^2$이하의 안정된 누설전류값을 보여주었다. 결론적으로 MgO 버퍼층을 이용한 기판이 BST 박막의 증착을 위한 기판으로써 효과적임을 알 수 있었다.

In this paper, the electrical characteristics and hot-carrier induced electrical performance degradations of high-voltage LDMOSFET fabricated by the existing CMOS technology were investigated. Different from the low voltage CMOS device, the only specific on-resistance was degraded due to hot-carrier stressing in LDMOS transistor. However, other electrical parameters such as threshold voltage, transconductance, and saturated drain current were not degraded after stressing. The amount of on-resistance degradation of LDMOS transistor that was implanted n-well with $1.0\times10^{13}/cm^2$ was approximately 1.6 times more than that of LDMOS transistor implanted n-well with $1.0\times10^{12}/cm^2$. Similar to low voltage CMOS device, the peak on-resistance degradation in LDMOS device was observed at gate voltage of 2.2V while the drain applied voltage was 50V. It means that the maximum impact ionization at the drain junction occurs at the gate voltage of 2.2V applying the drain voltage of 50V.

The electrical characteristics of high-voltage LDMOSFET (Lateral Double-diffused MOSFET) fabricated by a CMOS technology were investigated depending on the process and design parameters. The off-state breakdown voltages of n-channel LDMOSFETs were linearly increased with increasing to the drift region length. For the case of decreasing n-well ion implant doses from $1.0\times10^{13}/cm^2$ to $1.0\times10^{12}/cm^2$, the off-state breakdown voltage was increased approximately two times, however, the on-resistance was also increased about 76%. Moreover, the on- and off-state breakdown voltages were also linearly increased with increasing the channel to n-tub spacing due to the reduction of impact ionization at the drift region.

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with composition were investigated for PRAM. The 100-nm thick GeTe and $Sb_2Te_3$ films were deposited on $SiO_2$/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

PRAM (Phase change Random Access Memory) is one of the most promising candidates for next generation Non-volatile Memories. The Phase change material has been researched in the field of optical data storage media. Among the phase change materials, $Ge_2Sb_2Te_5$(GST) is very well known for its high optical contrast in the state of amorphous and crystalline. However, the characteristics required in solid state memory are quite different from optical ones. In this study, the structural properties of GST thin films with bottom electrode were investigated for PRAM. The 100-nm thick GST films were deposited on TiN/Si and TiAlN/Si substrates by RF sputtering system. In order to characterize the crystal structure and morphology of these films, we performed x-ray diffraction (XRD) and atomic force microscopy (AFM).

In order to investigate the influence of the homo buffer layer on the microstructure of the ZnO thin film, undoped ZnO buffer layer were deposited on sapphire (0001) substrates by ultra high vaccum pulsed laser deposition (UHV-PLD) and molecular beam eiptaxy (MBE). After high temperature annealing at $600^{\circ}C$ for 30min, undoped ZnO buffer layer was deposited with various oxygen pressure (35~350mtorr). On the grown layer of undoped ZnO, Arsenic-doped(l, 3wt%) ZnO layers were deposited by UHV-PLD. The optical property of the ZnO was analyzed by the photoluminescence (PL) measurement. From $\Theta-2\Theta$ XRD analysis, all the films showed strong (0002) diffraction peak, and this indicates that the grains grew uniformly with the c-axis perpendicular to the substrate surface. Field emission scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO were varied with oxygen pressure, arsenic doping level, and the deposition method of undoped ZnO buffer layers. The films became denser and smoother in the cases of introducing MBE-buffer layer and lower oxygen pressure during As-doped ZnO deposition. Higher As-doping concentration enhanced the columnar-character of the films.

Semiconductor fabrication technique has been increasingly developed virtue of greater demands, and supplies and applied semiconductor components in respective processes under development for minuteness. Now semiconductor having a line-width of 75nm was commercialized, and it is possible to scale down to 25nm. Accordingly, to cover with limitations, alternatives are actively investigated. In this paper, we overview the trend and applications of carbon nano tube (CNT) and present the future and technology based on existed theories.

To measure modulus and damping of semiconductive materials in power cable, we have investigated the modulus and damping of semiconductive materials showed by changing the content of carbon black. Then they were produced as sheets after pressing for 20 minutes at 180[$^{\circ}C$] with a pressure of 200[$kg/cm^2$]. The content of conduct ive carbon black was the vailable, and their contents were 20, 30 and 40[wt%], respectively. The modulus and $Tan\delta$ experiments were measured by DMA 2980. Ranges of measurement temperature from -50[$^{\circ}C$] to 100[$^{\circ}C$] and measurement frequency is 1[Hz]. The modulus of specimens was increased according to a increment of a carbon black content. And modulus was rapidly decreased at the glass transition temperature. The $Tan\delta$ of specimens was decreased according to a increment of a carbon black content.

To decrease and remove of much noises that is detected in PD (partial discharge) measuring test. we forced on detection of those. We made W-LC filter for measuring PD. which adapted that to field test. We tested after design laboratory circumstances like field line. and then the phase change properties of detected signal in UHF sensor were measured by Lemke Probe and oscilloscope (TDS-3054. Tektronix). Eventually we checked decrement of noises from experimental result. Also from experimental result at the joint box of 22.9[kV] distribution line. we obtained reasonable data which enable noises to decrease. Hereafter those results will be adapted at ultra-high voltage for trouble prevention and on-line cable watch. diagnosis of those.

절연지는 콘덴서 뿐만 아니라 변압기 및 부싱, 전력 및 전화케이블의 절연을 위해 전기분야에서 폭넓게 사용되고 있다. 각 응용 분야에 따라서는 전기적, 기계적 특성이 달리 요구되므로 절연지의 준비단계나 펄프의 처리단계에서 서로 다른 방법으로 만들어진다. 본 내용은 절연지의 절연파괴 강도와 유전체 손실에 영향을 미치는 것들에 대한 발전된 기술을 소개하기 위한 것이다. 절연지의 전기적 특성을 고찰한다는 것은 절연지가 거의 항상 절연유와 함침된 상태로 사용되기 때문에 매우 어렵다. 왜냐하면 함침에 사용된 절연유의 증류에 따라 조합된 절연유와 절연지의 전기적 특성에 대단히 중요한 영향을 미치기 때문이다. 본 내용에 소개된 결과들은 전기 절연과 관련된 절연지의 주요 물리적 특성을 관찰하기 위하여, OF 케이블에 사용된 한가지 특수한 저점도유를 사용해서 얻은 것이다. 또 본 내용은 절연지의 주요 열적, 기계적 특성과 절연유의 주요 특성이 기술되어 있다.

본 논문은 산소 플라즈마 처리에 따른 반도전성 실리콘 고무의 표면특성 변화를 조사하였다. 실리콘 고무는 각종 초고압 전력기기에서 절연부품으로 많이 사용되어 지고 있다. 하지만, 실리콘 고무가 가지고 있는 고유의 특성 때문에 반도전성 부품과 절연성 부품간의 계면이 접착이 잘 되지 않는 문제점이 나타난다. 이를 위해서 접착제를 사용하거나 표면 거칠기를 변화시키는 개질을 하기도 하지만, 이는 새로운 계면을 형성하거나 약점을 만드는 문제가 있다. 이를 위해 반도전성 실리콘 고무 표면을 산소 플라즈마 개질시켜, 표면을 활성화 시키는 역할과 표면을 균일하게 에칭시켜 기계적 interlocking 메커니즘으로 접착력을 향상시킬 수 있다. 본 실험에서는 산소 플라즈마 처리에 따른 반도전성 실리콘 고무의 표면을 표면에너지. XPS로 기본적인 표면특성을 조사하였다. 실험 결과, 단시간의 산소플라즈마 처리로 표면에 다수의 관능기가 관찰되었다. 이러한 산화층은 실록산 결합쇄가 산화된 실리카 유사층으로 밝혀졌다. 이로써 절연부와 접착 용이성이 기대되었으며, 벌크적인 실리콘 고무의 특성변화 없이 표면개질 만으로 우수한 계면특성을 얻을 수 있다.

In this paper, application of NN (Neural Network) as a method of pattern discrimination of PD(partial discharge) which occurs at the stator coil of traction motor was studied. For PD data acquisition, three defective models are manufactured such as internal discharge model, slot discharge model and surface discharge model. PD data for recognition were acquired from PD detector and DAQ board which is able to analysis the PD signal and perform the pattern discrimination. Statistical distributions and parameters are calculated to discriminate PD sources. And also these statistical distribution parameters are applied to classify PD sources by BP and has good recognition rate on the discharge sources.

In this paper, multiple regression analysis of the electrical characteristics for $HfO_2$ thin films grown by metal organic molecular beam epitaxy (MOMBE) was investigated. The electrical properties, such as, the accumulation capacitance and the hysteresis index, are the main factors to determine the characteristics of $HfO_2$ thin films. The input factors on the process are the substrate temperature, Ar gas flow, and $O_2$ gas flow. For statistical analysis, the design of experiments was carried out and the effect plots were used to analyze the manufacturing process. This methodology can predict the electrical characteristics of the thin film growth mechanism related to the process conditions.

In this Study, we have acquired 5-simulation Fault types Signals of high voltage Motor stator winding using epoxy/mica coupler. In order to know stator winding fault type using fault signals, we have performed feature extraction to apply wavelet transform technique. we have obtained skewness and kurtosis as statistical parameters of fault signal pattern from non deterioration state winding. We have know that 5 fault signals types have done an exponential function pattern shape but individually fault a class widely was different each other a signal waveform of pattern.

사용중인 OC의 사고가 외물접촉, 자연현상, 일반인 과실 등으로 인하여 전체 배전선로 일시고장의 대부분을 차지하고 있음으로, 피복의 트래킹 성능을 개선하여 수목 및 조류와의 접촉으로 인한 접촉부 전개 집중 시 또는 지지금구의 바인더부에 고전계 인가 시 트래킹에 의한 절연물의 탄화, 침식 등에 의하여 발생할 수 있는 절연파괴 등의 사고 위험을 줄이기 위하여 개발된 제품으로 산악지역 등에서 내트래킹, 내부식성, 수밀성 및 전기적인 특성이 우수하다. 본 평가기술에서는 알루미늄 묘|복강선, 연선 및 절연체의 일반적인 특성과 트래킹성, 도체수밀, 내후성, 밀착도, 교류파괴전압 등의 주요한 평가시험에 대한 방법을 검토하여 평가시험에 적용하여 평가시험시 문제점을 도출하고 평가시험방법을 정립하고자 한다.

HVDC(High Voltage Direct Current) is an underwater cable between Jeju Island and Haenam in main land and supplies approximately 50% of electrical usage in Jeju Island. If there is any power failure due to HVDC, it will cost approximately 50,000 US dollars per day including Thermal Electrical Generation. Therefore it is absolutely necessary to recover the problem in rapid timely basis. In conclusion, evaluation methode of HVDC cable is needed urgently to upgrade current HVDC underwater cable repair technique in Korea to minimize the cost and time factors.

The Surface of semi-conductive silicone rubber was treated by oxygen plasma to improve adhesion and electric performance in joints between insulating and semi-conductive silicone materials. Surface characterizations were assessed using contact angle measurement and Fourier transform infrared spectroscope (FTIR). Adhesion level was understood from T-peel tests between plasma treated semi-conductive and insulating material. Electrical breakdown strength was measured to understand the charge of electrical performance. From the results, the oxygen plasma treatment produces a significant increase in function group of containing oxygen which can be mainly ascribed to the creation of carbonyl groups on the silicone surface from the strength were improved. Therefore it is concluded then plasma treatment leads to decrease voids originating form poor adhesive, and the improve the adhesion in silicone interface. So we could obtain higher electrical design level of silicone material used for electrical apparatus using oxygen plasma treatment.

본 논문에서는 전력용 케이블에서 초고압으로 사용되고 있는 가교폴리에틸렌 내부(XLPE)에 침투된 침전극의 곡률반경변화에 따른 XLPE의 전계분포를 경계요소법에 의한 3차원 시뮬레이션 프로그램을 통하여 해석하여, 곡률반경이 작을수록 전계가 집중되는 현상을 확인하였다.

To measure surface roughness and smoothness of semiconducting materials in power cable, we have investigated the formation and growth process of carbon black showed by changing the content of carbon black. The specimens were primarily kneaded in material samples of pellet form for 5 minutes on rollers ranging between 70[$^{\circ}C$] and 100[$^{\circ}C$]. Then they were produced as sheets after pressing for 20 minutes at 180[$^{\circ}C$] with a pressure of 200[kg/cm]. The contents of conductive carbon black were the variable, and their contents were 20, 30 and 40[wt%], respectively. The surface roughness and smoothness of specimens were measured by SEM and AFM. From SEM experimental result, carbon black in specimens formed matrix as a particles. Also we showed growth process of carbon black according to an increment of the content of carbon black. From AFM experimental result, surface roughness of specimens decreased according to an increment of the content of carbon black.

With the aim of developing XLPE insulation for extra high voltage cable, we investigated the morphology of cross-linked polyethylene. We used a kind of base materials and additives, and controlled curing condition and amount of additives. The effect of addition of additives on morphology of XLPE such as lamellar density, orientation and additive layer were analyzed using TEM analysis. We applied this result to diffused additive amount was analyzed using FT-IR analysis, and the change of microstructure as the degree of additive diffusion was analyzed using TEM analysis.

In this paper, Latin Hypercube Sampling based the neural network model for the electrical characteristics of $HfO_2$ thin films grown by metal organic molecular beam epitaxy was investigated. The accumulation capacitance and the hysteresis index are extracted to be the main responses to examine the characteristics of $HfO_2$ thin films. X-ray diffraction was used to analyze the characteristic variation for the different process conditions. The initial weights and biases are selected by Latin Hypercube Sampling method. This modeling methodology can allow us to optimize the process recipes and improve the manufacturability.

SAW filters were fabricated on $LiNbO_3$ substrates to evaluate frequency response and properties of photolithography. In the both of etch and lift-off methods, lift off method was superior to etch method in fabrication process. Frequency response property was measured by network analyzer. From a measurement of acoustic property, SAW propagation velocity was 3574.9m/sec for $LiNbO_3$ SAW filter.

Electrical insulation is one of the most important parts in a high voltage apparatus. Traditionally mineral oils and synthetic esters have been widely used as dielectric coolants for power transformers. Recently, researchers are interested in the environmental friendly vegetable oil from environmental viewpoint. This paper reports on the synthesis and characterization of soybean based ester oils. Two different types of soybean based transformer oils, named as methyl ester and isopropyl ester were synthesized. The synthesis of these esters was achieved by transesterification reactions of soybean oil and alcohol in the presence of catalyst. The GC and NMR spectroscopic analysis of the esters have been performed. The thermal stability of the esters was determined by thermal gravimetric analysis(TGA).

본 논문은 23kV 가스절연개폐기에서의 윤활제 고착시 발생되는 현상을 조사하였다. 내부 개폐접점부의 마찰저항을 줄이고 가동전극의 윤활한 동작을 위해 사용되는 그리스 (grease)를 과다하게 도포할 경우 고착과 함께 가동전극의 미끄럼운동에 영향을 주는 것이 확인되었다. 영향 평가로는 물성시험과 투 개방 음향특성을 분석하였다. 본 논문의 결과는 개폐장치의 제조품질 개선 및 정전감소에 기여할 것으로 사료된다.

A method of double-pole construction is developing to strengthen the mechanical intensity of the electric poles. Therefore the mechanical properties of the double-pole were researched in this paper. First, considering field special quality electric poles were established. In the next tensile force was applied and stress distribution and fatigue load were examined. When a base of the pole is concrete, mechanical intensity of the double-pole increased about 1.7 times compared a single pole.

The dielectric relaxation properties of $^{60}Co$ gamma-ray irradiated Poly(vinylidene fluoride) (PVDF) containing various antioxidants have been investigated for radiation degradation. Cole-Cole's circular arcs were induced from the results of temperature and frequency dependency of dielectric properties with radiation dose. The magnitude of polarization of PVDF was decreased by adding antioxidants. The values of dielectric relaxation intensity calculated by using the Cole-Cole's circular arcs showed a certain tendency for radiation degradation.

In this work, the effects of plasma treatment on surface properties of semi conductive silicone rubber were investigated in terms of X-ray photoelectron spectroscopy(XPS). The adhesion characteristics of semiconductive-insulating interface layer of silicone rubber were studied by measuring the T-peel strengths. As a result, semiconductive silicone rubber surfaces treated with plasma discharge led to and increase in oxygen-containing functional groups, resulting in improving the degree of adhesion of the semiconductive-insulating interface layer of silicone rubber. these results are probably due to the modifications of surface functional groups or polar component of surface free energy of the semi conductive silicone rubber.

To estimate a electrical performance of the extra high voltage XLPE cable the discharge properties due to shift of void position were investigated. The $\Phi-q-n$ properties have been measured at room temperature by rising voltage ratio of 0.5[kV]. An obtained data was stored to personal computer through A/D converter. The period of applied wave form and discharge values were divided into 64 parts and discharge values generated during 10 seconds were accumulated by phases. As a result, it was confirmed that the charge, phase angle and counts of discharge changed due to void position.

현재 실온특대자기저항효과(室溫特大磁氣抵抗效果(CMR))재료에 관한 연구가 주목 받고 있다. 본 연구는 $LaSrMnO_3$ Magnetite에서 일부 La를 Nd로 치환(置換)한 결과, 사방정 구조를 갖는 실온 CMR 자기재료로써 현저한 CMR 효과가 있음을 확인하였고, 실온범위에서 실용적 응용가치가 있는 평탄한 MR-T 특성을 얻을 수 있음이 관찰되었다.

$YBa_2Cu_3O_{7-\delta}$ superconductor films have been prepared on silver substrates by electrophoretic deposition. As silver does not react with $YBa_2Cu_3O_{7-\delta}$ compound and has little influence on its superconductivity, it is usually doped in $YBa_2Cu_3O_7$ to improve the strength of the material and eliminate micro-cracks. It has been proved that Ag additive can lower the melting temperature of $YBa_2Cu_3O_{7-\delta}$ and act as linking bridge among $YBa_2Cu_3O_{7-\delta}$ particles, thus in this paper Ag doped $YBa_2Cu_3O_{7-\delta}$ thick films are prepared by electrophoretic co-deposition. As there are only some referenced experience formula and models for co-electrophoretic deposition and does not exist unified explanation, the behavior of Ag particles during co-electrophoretic deposition is also studied.

For mechanical and electrical stability and environment protection, Cu and stainless steel stabilizer is laminated to Ag layer to produce a composite neutral-axis(N-A) architecture in which the YBCO layer is centered between the oxide buffered metallic substrate and stabilizer strip lamination. this architecture allows the wire to meet operational requirements including stresses at cryogenic temperature, winding tensions, mechanical bending requirements thermal and electrical stability under fault conditions. we have experimentally studied mechanical properties of laminated stainless steel stabilizer on YBCO coated conductors. we have laminated YBCO coated conductors by continuous dipping soldering process. we have investigated lamination interface between solder and stabilizer, YBCO coated conductor. we evaluated bonding properties tensile / shear bonding strength, peeling strength laminated YBCO coated conductors.

Soft magnetic iron powders have been coated with polyester or phenol resin. And the coated powder (soft magnetic composite) have been pressed into ring type core over the pressure of 870 MPa. Green density, magnetic flux density, permeability, core loss of the samples were measured to look at the effect of the coating materials and the amount of them. Green density is increased with the amount of coating materials and shows the maximum value, 6.5 $g/cm^3$ at 5 w/o, but decreased over it. And lowest value of the core loss is showed for the 5 w/o coated samples.

YBCO 박막형 초전도체(coated conductor) 제조를 위해서는 여러 층의 완충층이 필요하다. 현재 일반적인 완충층의 구조는 seed layer로써 $Y_2O_3$, diffusion barrier로 YSZ, capping layer로 $CeO_2$가 사용되고 있다. 특히, capping layer로 $CeO_2$는 YBCO와 lattice mismatch가 매우 우수한 산화물로 이용되고 있다 본 연구에서는 $CeO_2$ capping layer가 증착 방법에 따라 그 위에 증착되어지는 초전도층의 특성에 어떤 영향을 미치는지 연구하였다. $CeO_2$를 thermal evaporation과 PLD (pulsed laser deposition) 증착 방법으로 증착 한 후 그 위에 PLD 방법으로 YBCO를 증착하여 coated conductor의 성능을 평가하였다.

A high Tc superconducting with a nominal composition of $Bi_2Sr_2Ca_2Cu_3O_Y$ was prepared by the citarte method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12h is not in the amorphous state as expected but in a crystalline state. X-ray diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor. After pyrolysis at $400^{\circ}C$ and calcination at $840^{\circ}C$ for 4h, the (001)peak of the high Tc phase was cleary observed. Experimental results suggest that the intermediate phase formed before the formation of the superconducting phase may be the most important factro in determining whether it is easy to form the high Tc phase or not. because the nucleation barriers of the two superconducting phase may be altered by the variation of the crystal structures of those intermediate phase.

전력선 통신을 위한 커플러용 자심재료의 열처리 온도증가에 따라 결정이 성장하여 인덕턴스는 증가 하였고, $550^{\circ}C$ 이상에서는 포화점을 나타내었다. 커플러는 자심재료의 투자율이 높을수록 커플러의 저주파 대역의 신호전승 특성이 우수하게 나타났지만, 주파수 증가에 따라 급격히 저하하는 불안정한 특성을 나타내었다. 그리고 절단면 사이의 Air gap 증가에 따라 10 MHz이하의 주파수 대역에서 신호전승특성이 급격히 감소하였고, 허용전류는 직선적으로 증가하였으며 Air gap이 $600{\mu}m$이상일 때 300A의 전류에서 특성을 발휘하였다.

The tensile strain dependency of critical current in YBCO coated conductors was examined at 77K and in the self magnetic field. A commercially available YBCO sample with Cu stabilizer layer was supplied. There existed a peak in the relation between the Ie and tensile strain, and the reversible variation of $I_c$ with applied tensile strain was found. In the neutral axis Ni alloy RABiTS-$Y_2O_3$/YSZ/$CeO_2$ buffered YBCO tape, the $I_c$ recovered reversibly until the applied strain reached to about 0.5%, representing that a significant residual compressive strain induced during cooling to 77 K influenced the axial strain tolerance of YBCO conductors. To investigate the strain and stress influence on the $I_c$, the stress-strain characteristics of YBCO conductors measured at 77 K were discussed.

본 연구에서는 MCP법을 이용하여 Bi2212 초전도 튜브를 제작하고 공정 변수에 따른 초전도 튜브의 전기적 특성을 평가하였다. 초전도 분말은 $1100^{\circ}C$에서 용융하여 $300\sim500^{\circ}C$로 예열된 몰드 내에 주입하였으며 몰드는 1000 RPM으로 회전시켰다 제작된 초전도 튜브는 $840^{\circ}C$ 의 $O_2$ 분위기에서 72시간 열처리 하였다. SEM과 XRD 분석결과 튜브는 약 $40{\mu}m$의 크기를 갖는 Bi2212 초전도 상이 일정한 방향성을 갖으며 XRD 분석 결과 튜브 바깥부문에 Bi2201상이 존재하였다. 전기적 특성은 몰드 회전 속도가 증가할수록, 튜브의 두께가 증가할수록, 길이가 감소할수록 높은 $I_c$ 값을 나타내었으며, 이때 50 mm$\times$70 mm$\times$2.5 mm, 1000 RPM의 튜브에서 전기적 특성은 $I_c$=890 A, $T_c$= 80 K의 값을 나타내었다.

The crystallization of FePt/MgO(100) magnetic thin films of various thicknesses has been studied using synchrotron x-ray scattering, atomic force microscope, and vibrating sample magnetometer. In film with a 500-${\AA}$-thick, ordered (fct) FePt phase was dominantly crystallized into perpendicular (001) grains keeping the magnetically easy c-axis normal to the film plane during annealing. In film with a 812-${\AA}$-thick, however, longitudinal (110) grains keeping the c-axis parallel to the film plane were grown on top of the perpendicular (001) grains. The behavior of the magnetic properties was consistent with the thickness dependence of the crystallization. We attribute the thickness dependence of the crystallization to the substrate effect, which prefers the growth of the c-axis oriented perpendicular grains near the film/substrate interfacial area.

We have studied the superconducting properties and flux pinning enhancement of $(Y_{0.5}Nd_{0.25}Sm_{0.25})_{1.8}Ba_{2.4}Cu_{3.4}O_y$ [(YNS)-1.8] composite oxides by melt growth process in air. A sample prepared by this method showed well-textured microstructure, and $(Y_{0.5}Nd_{0.25}Sm_{0.25})_2BaCuO_5$ [(YNS)211] nonsuperconducting particles were uniformly dispersed in large (YNS)123 superconducting matrix. The sample showed a sharp superconducting transition at 91 K. The magnetization measurements of the (YSN)-1.8 sample exhibited the enhanced flux pinning, compared with $YBa_2Cu_3O_y$ (Y-123) sample without Sm and Nd.

Ion beam assisted deposition(IBAD) technique was used to produce biaxially textured polycrystalline MgO thin films for high critical current YBCO coated conductor. Hastelloy tapes were continuous electropolished with very smooth surface for IBAD-MgO deposition, RMS roughness of Hastelloy tape values below 2 nm and local slope of less than $1^{\circ}$. After the polishing of the tape an amorphous $Y_2O_3$ and $Al_2O_3$ are deposited Biaxially textured MgO was deposited on amorphous layer bye-beam evaporation with a simultaneous bombardment of high energy ions. We had developed the RHEED to measure in-situ biaxial texture of film surface as thin as tens angstrom. And also ex-situ characterization of buffer layers was studied using XRD and SEM. The full-width at half maximum(FWHM) out of plane texture of IBAD-MgO template is $4^{\circ}$.

Bi-2223 High-Temperature Superconducting(HTS) tape is one of the most widely used HTS tape for power application. Characteristics of the over current of HTS tape with different sheath are described. This paper presents the basic properties such as temperature and resistivity rise of the Bi-2223 HTS tape which is exposed to the over current. It is expected that results from this study can be utilized as basic data in designing superconducting power devices.

Critical current(Ic) degradation of HTS tapes and AC loss under mechanical load is one of the hottest issues in HTS development and application. Mechanical load reduces the critical current of superconducting wire, and the Ie degradation affects the AC loss of the wire. We measured the Ie degradation and AC loss under tension and bending of Bi-2223 tapes processed by "Powder-in-Tube" technique at 17K with self-field. And we have studied the frequency dependence of self-field AC loss in multi-filamentary Bi-2223/Ag tape at 77K. The measurement results and discussions on the relationship between Ic degradation and AC loss are presented.

As high temperature superconductor applications became a reality due to increase in coated conductor performance, it is important to understand their stability behavior to design safe electrical power systems. We have experimentally studied the dependence of quench and recovery characteristics of coated conductors on the amplitude of current and duration time. The sample used in the present study is stabilized with stainless steel. Stability tests of 3 cm long sample were performed in a liquid nitrogen bath cooling condition by applying a short period over current pulses for 50 and 100 ms, with amplitude up to ~ 6 times of the critical current. The transport current that follows before and after the current pulse was fixed about ~85% the critical current. We analyzed the quench recovery using the current voltage characteristic.

A high Tc superconducting with a nominal composition of $Bi_2Sr_2Ca_2Cu_3O_Y$ was prepared by the citarte method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12h is not in the amorphous state as expected but in a crystalline state. X-ray diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor. After pyrolysis at $400^{\circ}C$ and calcination at $840^{\circ}C$ for 4h. the (001)peak of the high Tc phase was cleary observed. Experimental results suggest that the intermediate phase formed before the formation of the superconducting phase may be the most important factor in determining whether it is easy to form the high Tc phase or not. because the nucleation barriers of the two superconducting phase may be altered by the variation of the crystal structures of those intermediate phase.

An electromagnetic memory effect observed in superconducting YBCO system was studied. From the measurement of differential conductance, it was cleared that the mechanism of electromagnetic memory can not be explained by using conventional flux flow model. By changing the density of external magnetic flux, changes in inductance of a coil in which a superconducting bar is inserted were also measured. It was concluded that the electromagnetic memory effect aries from the interaction between the trapped magnetic flux and the weak link of the filament formed in the superconducting bar.

다중 코어를 이용한 대전류 변압기용 Mn-Zn ferrite를 제조하고 전자기적 특성을 분석하였으며, 제조된 자심재료를 이용하여 변압기를 제조하고 전원장치에 탑재하여 효율특성을 분석하였다. ZnO의 몰비가 증가할수록 혼합 스피넬의 형성을 통한 보아 자자의 증가로 인해 투자율은 증가하고 상대적으로 전력손실이 감소하여 $Fe_2O_3$ : MnO : ZnO = 53 : 36 : 11 mo\% 일 때 가장 우수한 특성을 나타냈고, 열처리 공정의 승온 과정에서부터 산소 분압을 제어하고 최적의 대기압 상수를 산출함으로써 Zn-loss 현상을 최소화하여 ZnO 11 mol%, 대기압 상수 7.7일 때 투자율 2350, 밀도 4.9 $g/cm^3$, 비저항 480 ${\Omega}cm$, 300 mT의 최대 자속 밀도 특성을 갖는 우수한 자심 재료를 개발하였다. 그리고 최소 손실 온도를 $90^{\circ}C$ 이하로 감소시켰으며 100 kHz에서 250 $kW/m^3$의 낮은 전력손실을 나타냈다. 또한 개발된 자심재료를 이용하여 제조된 전원장치는 30~80A의 출력 전류에서 85% 이상의 고효율을 얻었다.

We have investigated the quench performance of shunt reactors in the parallel connection of resistive type superconducting fault current limiter (SFCL) components based on YBCO films. To increase voltage rating, components are connected in series and to increase current level, they are connected in parallel. This method has cauesd the unbalanced quench between each components. To improve the problem, we have compared the quench properties between the current limiting components without and with shunt reactors connected in parallel. To improve the quench performance, across individual SFCL components connected the shunt reactor in parallel. The components with shunt reactors successfully produced simultaneous quench, resulting from the bypass of the fault current in the direction of the shunt reactor.

Differently from the tensile, transverse compression and torsion cases, the bending test of HTS tapes requires a lot of time and efforts, since the sample should be mounted successively onto bent sample holders in the order of decreasing radius and measuring the $I_c$ at each step. The influence of repeated cooling and warming experienced during these processes on the $I_c$ degradation can not be ignored. As a result, in this study, particularly. a new one-body type sample holder which provides continuous bending strains at 77K was devised. And, $I_c$ degradation behavior of Bi-2223 tapes under easy bending condition was investigated and compared that with other cases using Goldacker-type bending tester or respective sample holder.

X7R 특성을 가지는 적층 칩 캐패시터 제작시 그린시트의 두께에 따라 유전율, 절연파괴 전압. C-V특성이 변화되며 특히, 그린시트의 두께는 C-V특성에 중요한 인자임을 확인할 수 있었다. 적층수 증가에 따른 특성 검토시 80층 이상부터 재료의 물성 변화로 예상되는 특성을 볼 수 있으며 특히 전류-전압특성에서의 층수 증가에 따른 영향을 몰 때 유전체 조성 및 공정조건을 최적화하여야 함을 확인하였다.

Add $Li_2CO_3$ to $(Ba_{0.6}Sr_{0.4})$ $TiO_3$ powder to lower sitering temperature in this research, made thick film by tape casting method. Investigated about sitering temperature and physical properties that added $Li_2CO_3$ Even if lower sitering temperature about $200^{\circ}C$ adding $Li_2CO_3$ 10wt.%, density was near to 5.7$g/cm^3$ that is theoretical values, and crystal structure examined as perobeuseukaiteu senior after sintering.

In this paper, in order to develop Pb-free piezoelectric ceramics, $(Li_{0.04}Na_{0.44}K_{0.52})(Nb_{0.86}Ta_{0.10}Sb_{0.04})O_3$ ceramics were fabricated with the variation of calcination temperature and sintering temperature. Specimens couldn't be sintered below $111^{\circ}C$ and showed the largest density at calcination temperature of $800^{\circ}C$. Specimens manufactured with the variation of calcination temperature showed pseudo-tetragonal phase, and showed the optimal values of kp=0.45, ${\varepsilon}r$=1336 and $d_{33}$=254 at calcination temperature of $800^{\circ}C$ and sintering temperature of $1110^{\circ}C$.

ZnO varistor ceramics were fabricated as a function of the sintering temperature from $1125^{\circ}C$ to $1200^{\circ}C$ with glass-frit 0.03wt% addition. The average grain size was increased from 10.4 ${\mu}m$ to 23.7 ${\mu}m$, and varistor voltage was decreased from 538 V to 329 V with rising of the sintering temperature. The nonlinear coefficient a showed similar value from 75 to 80 and leakage current of all specimens exhibited the result of $1{\mu}A$ at 82% of varistor voltage. But the clamping voltage ratio of the specimens sintered at $1175^{\circ}C$ was 1.37 at 25A [$8/20{\mu}s$]. Also, endurance of surge current and deviation of varistor voltage of sintered specimens at $1175^{\circ}C$ were $6400A/cm^2$, $\Delta$-3.32%, respectively.

Generally, the dielectric constant and loss tangent are gotten by resonators. This paper presents analysis of the comparing the dielectric constant and loss tangent from the Ring, T and series gap structures. The T structure can be analyzed easily at wideband characteristic with simple design. the Ring can ignore the radiation loss from the open-ended effect. the Series gap can get more accurate permittivity than a Ring structure. The Used materials were dupont9599 LTCC ceramic and daeju0086 Ag.

Applying a designed test coupon pattern for fabricating resistors various resistors were formed using PTF(polymer thick film) pastes. Aspect ratio from 0.25 to 4 were selected for fabricating resistors. Formed resistors were cured at $170^{\circ}C$ and $240^{\circ}C$. Electrical properties of fabricated resistors were measured and their values analyzed in relation to cure temperature and formed geometry via printing. Also effects of substrates used for fabricating resistors were observed.

$PbTiO_3$ and PZT(52/48) powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PT/PZT(52/40) heterolayered thick films were fabricated by the screen-printing method on Pt/$Al_2O_3$ substrates. The structural properties such as DTA, X-ray diffraction and microstructure, were examined as a amount of the PbO-$PbF_2$ flux. In the X-ray diffraction analysis, PZT(52/48) thick films showed a perovskite polycrystalline structure without a pyrochlore phase.

The microstructure, electrical, and degradation characteristics against impulse current of ZPCCL-based varistors were investigated with various sintering temperature in the range of $1240\sim1300^{\circ}C$. The densification of varistors was improved, but the nonlinearity was deteriorated with increase of sintering temperature. The varistors sintered at $1250^{\circ}C$ and $1260^{\circ}C$ exhibited high stability against surge stress. On the whole, the variation of characteristics of varistor for surge stress was increased in order of varistor voltage$\rightarrow$nonlinear exponent$\rightarrow$dissipation factor$\rightarrow$leakage current.

본 연구에서는 $LiCoO_2/LiNi_{1/3}Mn_{1/3}Co_{1/3}O_2$ 혼합 정극활물질로 사용하여 전극을 제작하고 성능을 평가하였다. $LiCoO_2/LiNi_{1/3}Mn_{1/3}Co_{1/3}O_2$와 $LiCoO_2$의 혼합비에 따른 충방전 거동 및 임피던스 변화를 측정하였다. 각 조성에서의 초기용량은 160 ~ 170 mAh/g 정도였으며, $LiNi_{1/3}Mn_{1/3}Co_{1/3}O_2$의 첨가 비율이 증가함에 따라 비용량이 증가하였으나 고율에서의 방전용량은 낮았다.

The $ZnNb_2O_6$ ceramics with 5wt% CuO and 5wt% $B_2O_3$ were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of $950^{\circ}C\sim1025^{\circ}C$ for 3hr. in air. The structural properties were investigated with sintering temperature by XRD and SEM. Also, the microwave dielectric properties were investigated with sintering temperature. Increasing the sintering temperature, the peak of second phase ($Cu_3Nb_2O_8$) was increased. But no significant difference was observed as sintering temperature. In the $ZnNb_2O_6$ ceramics with 5wt% CuO and 5wt% $B_2O_3$ sintered at $975^{\circ}C$ for 3hr, the dielectric constant, quality factor and temperature coefficient of the resonant frequency were 19.30, 14,662GHz, +4.1$8ppm/^{\circ}C$, respectively.

We deposited Zinc oxide (ZnO) thin films on Ru buffer layer in order to protect the amorphous layer between ZnO and Al interface. In X-ray diffraction (XRD) pattern, it was observed that increase of (002)-orientation by the variation of annealing treatment temperature. Also, surface roughness and specific resistance were increased by annealing treatment but full width at half maximum (FWHM) was decreased. In film bulk acoustic resonators (FBARs) fabricated from these results, we finally confirmed that the resonant frequency of 0.89 GHz without its shift was measured.

An electrophoretic display using $TiO_2$ particles is the most promising candidate because it offers various advantages such as ink-on-paper appearance, good contrast ratio, wide viewing angle, image stability in the off-state and extremely low power consumption. The core technology of electrophoretic display is the dispersion controlling of $TiO_2$ nano particles in nonaqueous solution. To prepare an ink for electronic paper using electrophoretic properties of $TiO_2$ nano particles, cyclohexane with low dielectric constant and transparency, polyethylene for producing polymer coating layer which reduces apparent gravity of $TiO_2$, and $TiO_2$ powders were mixed together by planetary-mill. The zeta-potential value of $TiO_2$ particles in cyclohexane was measured about -40mV, but was measured over -110mV by dispersant attached to polyethylene-coated $TiO_2$ surface. Prepared electronic ink was filled in cross patterned micro-wall with $200{\mu}m$ in width and $40{\mu}m$ in height on ITO glass designed by photolithography. The response time of electronic paper evaluated by mobility of $TiO_2$ particle between micro-walls was measured 0.067sec, but the drift velocity from reflectance wave form during reverse from of electronic ink was measured 0.07cm/sec.

ZnO 바리스터의 소결조건에 따른 바리스터 특성과 유전특성을 조사하였다. 소결조건에서 소결시간 및 시간에 따라 바리스터 전압의 변화를 볼 수 있었으며 적정소결온도에서 바리스터 전압 $V_{1mA}$ 및 $V_{10mA}/V_{1mA}$특성은 225 ~ 250. 0.85 ~ 0.9의 특성을 얻을 수 있었다. 특히, 유전특성의 경우 주파수에 따라 정전용량의 변화가 높은 온도에서 소결한 경우 높게 나타났으며 적정 소결온도에서는 유전율은 720 ~ 740, 유전손실은 2.5% 이하의 값을 얻을 수 있었다.

본 논문에서는 카메라폰용 광학중(Optical zooming) 과 자동초점조절장치 (Auto Focusing, AF)에 쓰일 초음파모터를 제작하였다. 초음파모터의제작 및 시뮬레이션은 유한요소해석 프로그램인 ATILA 5.2.1 (Magsoft co.)를 사용하여 디자인설계에 따른 구동특성을 고찰하였고 제작된 초음파모터는 한쪽 면이 없는 사작형의 탄성체를 제작하였으며 탄성체의 양쪽 다리에 각각 압전체를 부착하였다. 또한 압전세라믹의 조성은 $0.9Pb(Zr_{0.51}Ti_{0.49})O_3-0.1Pb(Mn_{1/3}Nb_{1/3}Sb_{1/3})O_3$의 조성으로 설계하였고 시편의 제조는 7-layer로 적층하였다. 제작된 압전세라믹의 치수는 6*2*0.35$mm^3$(길이*폭*두께)로 제작하였다 또한 탄성체의 외형치수는 10*10*2$mm^3$로 제작하였으며 두께를 각각 0.3[mm], 0.5[mm], 0.8[mm]으로 변화시키며 제작하였다. 두께가 0.8[mm]인경우 공진주파수는 60.5[kHz]를 나타내었으며 초음파모터의 압전세라믹에 인가전압이 증가함에 따라 회전속도와 모터에 흐르는 전류는 증가하였다. 인가전압이 40[Vpp] 일 때 회전속도는 206[rpm] 이며 소비전력은 0.3[W]로 제작된 시편은 카메라폰용 광학중 및 자동초점조절장치시스템 분야에 응용이 가능하다.

In this study, in order to develop low temperature sintering piezoelectric actuator, $Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_x(Zr_{0.50},Ti_{0.50})_{1-x-0.03}$ (PMW-PNN-PZT) ceramic systems were fabricated using $CaCO_3-Li_2CO_3$ sintering aid and their dielectric and piezoelectric properties were investigated with the variation of PNN substitution. The piezoelectric actuator requires high piezoelectric constant $d_{33}$ and high electromechanical coupling factor kp. At the PMW-PNN-PZT ceramics with 9mol% PNN substitution sintered at $900^{\circ}C$, the density, electromechanical coupling factor kp, dielectric constant, piezoelectric constant $d_{33}$ and mechanical quality factor Qm showed the excellent values of 7.86 [$g/cm^3$], 0.584, 1881, 485 [pC/N] and 76, respectively for piezoelectric actuator application.

Ternary tellurite glassy systems ($Li_2O-V_2O_5-P_2O_5$) have been synthesised using Vanadium oxide as a network former and Lithium oxide as network modifier. The addition of a metal? oxide makes them electric or mixed electric-ionic conductors, which are of potential interest as cathode' materials for solid-state batteries. This glass-ceramics crystallized from the $Li_2O-V_2O_5-P_2O_5$ system are particularly interesting, because they exhibit high conductivity (up to $5.95\times10^{-4}$ S/cm) at room temperature. the glass samples were prepared by quenching the melt on the copper plate and the glass-ceramics were heat-treated at crystallizing temperature determined from differential thermal analysis (DTA). The electric D.C conductivity result have been analyzed in terms of a small polaron-hopping model.

ZnO varistor ceramics were fabricated as a function of the amount of $Y_2O_3$ addition and sintered at $1250^{\circ}C$ for 2 hour. The average grain size was decreased from 14.2 ${\mu}m$ to 8.3 ${\mu}m$ with the amount of $Y_2O_3$ addition, and varistor voltage was increased from 433 V to 563 V with $Y_2O_3$ addition. Nonlinear coefficient a of all specimens were increased with the amount of $Y_2O_3$ more than 67, in case of $Y_2O_3$ 0.01wt% addition showed the excellent results of 87. And leakage current was less than $1{\mu}A$ at 82% of varistor voltage. The clamping voltage ratio of the specimens added 0.01wt% $Y_2O_3$ was 1.41 at 25A [8/20${\mu}s$]. At the specimen 0.01wt% $Y_2O_3$ addition. endurance of surge current and deviation of varistor voltage were 5700A/$cm^2$ and $\Delta$-2.86%, respectively.

본 연구에서는 $Fe_2O_3$를 첨가한 $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr_xTi_{1-x})O_3$ 세라믹스에서 Zr/Ti 비 변화에 따른 소결 및 압전, 유전특성을 조사하였다. $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3$+0.25Wt% $Fe_2O_3$ 계에서 Zr/(Ti+Zr)비(x)를 0.39에서 0.42까지 변화시킨 조성을 1100 - $1250^{\circ}C$ 온도에서 2시간 소결하여 이의 결정구조 및 미세조직을 분석하였고, 압전, 유전 특성 및 RAINBOW 액츄에이터로의 응용을 조사하였다. $1150^{\circ}C$에서 소결한 0.405 조성(x)에서 유전상수(${\varepsilon}r$) = 4669, 전기기계결합계수(kp) = 0.75, 압전상수($d_{33}$) = 810 pC/N의 우수한 특성 값을 나타내었으며, 닥터블레이드법에 의해 RAINBOW 액츄에이터를 제작하여 변위특성을 조사하였다.

Three different composition 130um thickness PZT were fabricated by extrusion method and burned out at $550^{\circ}C$ and sintered at $1260^{\circ}C$/2.5hrs. Actuator was fabricated using glass and Si(100) wafer by MEMS process. From XRD data, in case of DECH, perovskite phase peak strength is higher than others. We were able to obtain the information of grain growth and porosity by SEM images. Also DECH PZT on glass membrane(100um thickness) have larger displacement than others.

In this study,. the microwave dielectric properties of the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics with sintering temperature were investigated for LTCC application. According to the X-ray diffraction patterns, the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics had columbite structure of the $TiTe_3O_8$ phase and scheelite structure of the $CaWO_4$ phase. Increasing the sintering temperature, the bulk density, the dielectric constant and the quality factor of the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics were increased. In the case of the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics sintered at $810^{\circ}C$, the bulk density, the dielectric constant and the quality factor were 5.72$g/cm^2$, 33.6, 22,013GHz respectively.

The characteristics of varistors based on M.Matstuokas with one another ZnO powder (50nm, 100nm, 300nm) have been investigated. The optimum calcination and sintering temperature was also selected for each samples. Varieties of sintering conditions were found according to powder size. As the result of analysises on each operating voltages. We obtained the most high voltage in a sample with 50nm ZnO powder.

In this study, in order to develop the low temperature sintering ceramics, PZT ceramics adding $MnO_2$, $B_2O_3$ were manufactured, and their piezoelectric and dielectric properties is investigated. The results of this study were gotten such as follows. The electromechanical coupling coefficient(kp) showed good properties on the whole, showed its maximum value 28.266 in specimens sintered at 1200[$^{\circ}C$]. The mechanical quality coefficient(Qm) showed its maximum value 162.61 in specimens sintered at 1200[$^{\circ}C$] and was increased by increasing sintering temperature. The dielectric constant showed the optimum values of 538.903 at specimen sintered at $1000^{\circ}C$.

High capacitance MLCC has been enabled through the use of nickel electrodes to produce thinner layers at acceptable costs. High capacitance MLCC devices offer significant advantages to electrolytics such as tantalum and aluminum ; Lower ESR for high frequency applications. Non-polarized. Many process improvement have enabled this technology Higher dielectric constants Thinner dielectric and electrode layers through BME More accurate layer construction. This study is high capacitance MLCC electrical propertics. reliability, Analysis on DOE(Design Of Experiment) of the electical propertics.

수동소자를 PCB(Printed Circuit Board) 안으로 집적하기 위한 방법의 일환으로 polymer-metal, polymer-ceramic composite에 연구가 국내외 연구 국내외 연구기관에서 광범위하게 진행되고 있다. 본 연구에서는 polymer-metal-ceramic composite 에서 PZT-coated Ni의 volume fraction에 따른 유전율 변화에 대하여 조사하였다. 원료로는 PZT(52/48) solution. 니켈금속분말, PMMA(polymethyl methacrylate)를 사용하였다. 전기적 특성은 임피던스분석기를 이용하여 측정하였으며 mixing rule과 percolation theory를 이용하여 결과를 해석하였다.

In this study, in order to develop the low temperature sintering multilayer piezoelectric transformer, PMW-PMN-PZT system ceramics were manufactured with the addition of sintering aids, and their dielectric and piezoelectric characteristics were investigated. At the composition ceramics sintered at $900^{\circ}C$, dielectric constant(${\varepsilon}r$), electromechanical coupling factor(kp) and mechanical quality factor(Qm) showed the optimal value of 1043, 0.44 and 793, respectively, for multilayer piezoelectric transformer application.

In this paper, an ultrasonic level limit sensor with a new structure utilizing the acoustic impedance matching is proposed to be able to check it out a change of water-level. 2 PZT resonators with the same property are bonded directly on the polyethylene plate. One is for transmitter as an ultrasonic transducer, the other one is for receiver. In this case, a polyethylene plate will operate as an acoustic guider to transmit a transverse wave between 2 PZT resonators in air. While in the water, a polyethylene plate having a similar acoustic impedance with the water will be emitted an acoustic energy into the water as a longitudinal wave. According to this mechanism, there was a wide difference of acoustic signal output between underwater and in air. As a summary, it is believed that this proposed level limit sensor could be used as a new one with strong toughness from the external electrical and mechanical noise.

Novel structure ultrasonic motors which have cross type stator were designed and fabricated. Driving characteristics of the motors were analyzed and measured by changing the materials of the stator. This ultrasonic motor has stator with hollowed cross bar and the stator rotate the rotor using elliptical displacement of the inside tips. This motion is generated by lateral vibration mode of cross bars. This stator was analyzed by finite element analysis and the ultrasonic motors were made by analyzed results. The larger displacements were obtained, when the Young's modulus was increased and the Poisson's ratio was decreased. The fabricated one has high speed in large Poisson's ratio and Young's modulus. And the torque was increased in high Young's modulus.

Compact power amplifier modules (PAM) for WCDMA/KPCS and GSM/WCDMA dual-band applications based on multilayer low temperature co-fired ceramic (LTCC) substrates are presented in this paper. The proposed modules are composed of an InGaP/GaAs HBT PAs on top of the LTCC substrates and passive components such as RF chokes and capacitors which are embedded in the substrates. The overall size of the modules is less than 6mm $\times$ 6mm $\times$ 0.8mm. The measured result shows that the PAM delivers a power of 28 dBm with a power added efficiency (PAE) of more than 30 % at KPCS band. The adjacent-channel power ratio (ACPR) at 1.25-MHz and 2.25-MHz offset is -44dBc/30kHz and -60dBc/30kHz, respectively, at 28-dBm output power. Also, the PAM for WCDMA band exhibits an output power of 27 dBm and 32-dB gain at 1.95 GHz with a 3.4-V supply. The adjacent-channel leakage ratio (ACLR) at 5-MHz and 10-MHz offset is -37.5dBc/3.84MHz and -48dBc/3.84MHz, respectively. The measured result of the GSM PAM shows an output power of 33.4 dBm and a power gain of 30.4 dB at 900MHz with a 3.5V supply. The corresponding power added efficiency (PAE) is more than 52.6 %.

PZT(20/80) and PZT(80/20) powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT(20/80)/PZT(80/20) heterolayered thick films were fabricated by the screen-printing method on Pt/$Al_2O_3$ substrates. The structural properties such as DTA, X-ray diffraction and microstructure, were examined as a amount of the excess PbO. In the DTA analysis, the formation of the polycrystalline perovskite phase was observed at around $880^{\circ}C$. The average thickness of the PZT heterolayered thick films was approximately $80{\mu}m$.

Antimony doped tin oxide(ATO) nano powders have been synthesized by homogeneous precipitation method using $SnCl_4\cdot5H_2O$ for precursor, $SbCl_3$ as doped material and urea. The hydrolysis of urea and conductive mechanism and Heat treatment was performed at the temperature from $500^{\circ}C$ to $700^{\circ}C$ in air. The ATO nano powders are characterized by means of Thermogravimetry differential thermal analyzer (TG-DTA), X-ray diffraction (XRD), Brunauer, Emmett, and Teller adsorption (BET), Scanning electron microscopy (SEM) ATO nano powders with an average size of nm and the highest surface area 129 $m^2g^{-1}$ are obtained.

LTCC(low temperature co-fired ceramics)용 glass/ceramic 복합체를 제조하기 위해 3종류 의 glass를 선정하고 filler로 $Al_2O_3$ 와 $TiO_2$를 사용하여 glass frit에 따른 소결 및 유전 특성에 대하여 조사하였다. Glass frit은 lead-borosilicate(PBS), zinc-borosilicate(ZBS), bismuth-borosilicate(BBS) glass 조성을 사용하였고 1100~$1400^{\circ}C$에서 melting시킨 후 quenching하여 frit화하였다. $Al_2O_3$와 $TiO_2$ filler에 10~50 vol%로 glass frit을 각각 혼합한 후 600~$950^{\circ}C$에서 2시간 동안 소결한 결과 50 vol% glass frit 일 때 $900^{\circ}C$ 이하에서 소성이 가능하였다. 유전특성은 $900^{\circ}C$에서 $Al_2O_3$-50vol%PBS($\varepsilon_{r}$=8.8, $Q{\times}f_o$=4,900, $\tau_f$=-24), $Al_2O_3$-50vol% ZBS($\varepsilon_{r}$=5.7, $Q{\times}f_o$=17,800, $\tau_f$=-21), $Al_2O_3$-50vol%BBS($\varepsilon_{r}$=11.1, $Q{\times}f_o$= 2,080, $\tau_f$=-48), $TiO_2$-50vol%PBS($\varepsilon_{r}$=18.6, $Q{\times}f_o$=3,800, $\tau_f$=+135), $TiO_2$-50vol%ZBS($\varepsilon_{r}$=36.4, $Q{\times}f_o$= 7,500, $\tau_f$=+159), $TiO_2$-50vol%BBS($\varepsilon_{r}$=56.4, $Q{\times}f_o$=520, $\tau_f$=+119)을 나타내었다. 따라서 LTCC용 기판재료 및 마이크로파 유전체로 응용이 가능한 것으로 확인되었다.

PZT films are the most intensively investigated because PZT has advantages such as low processing temperature and large remnant values. In this paper, the microstructure and electric properties of $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ heterolayered thick films with Zr mole ranging from 30 to 70 % screen printed onto a alumina substrate were studied. $Pb(Zr_x,Ti_{(1-x)})O_3$ and $BaTiO_3$ powders were prepared by the sol-gel method. The $BaTiO_3$ powders were calcined at $700^{\circ}C$ for 2 hours. Structural properties of $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ multilayered thick films were investigated. As a result of the X-ray diffraction (XRD) analysis, $Pb(Zr_x,Ti_{(1-x)})O_3/BaTiO_3$ exhibited a perovskite polycrystalline phase without pyrochlore phase or any preferred orientation.

The microstructure and electrical properties of $Pr_6O_{11}$-based ZnO varistors consisting of Zn-Pr-Co-Cr-Tb oxides were investigated with $Tb_4O_7$ content in the range of 0.25~1.0 mol%. The varistor ceramics exhibited very high densification in the range of 5.74~5.83g/$cm^3$ with increasing $Tb_4O_7$ content. Furthermore, the incorporation of $Tb_4O_7$ in varistor ceramics $Tb_4O_7$greatly increased All of the characteristic parameters. As a result, It was found that $Tb_4O_7$-added varistors are good for high voltage field.

LTCC (Low Temperature Cofired Ceramic) technology is one of technologies which can realize SIP (System-In-a-Package). In this paper realization of gas sensor using LTCC technology was described. In the conventional gas sensor structure, wire bonding method is generally used as an interconnection method whereas in the LTCC sensor structure, via was used for the interconnection. As sensing materials, $SnO_2$ was adopted. The effect of frit glass portion on the adhesion of the sensing material to the LTCC substrate and the electrical conductivity of the sensing material were analyzed. AgPd, PdO, Pt was added to the sensing material as an additive for improving the gas sensitivity and electrical conductivity and the effect of the amount of additives in the sensing material on the electrical conductivity was investigated. The effect of the amount of frit glass in the termination on the sensor performance, especially mechanical integrity, was considered and the crack initiation and propagation in the boundary between the sensing material and the termination was studied.

Supercapacitors are promising devices for delivering high power density. Digital communications, electric vehicles and other devices that require electrical energy at high power levels in relatively short pulses have prompted considerable research on supercapacitors. In recent years, solid electrolytes have been investigated for supercapacitors. Solid electrolytes are advantageous over liquid electrolytes in respect of easy handling and reliability without electrolyte leakage. In this preliminary study, an electrochemical supercapacitor in all solid configuration has been fabricated using CNF-DAAQ and poly-vinylidenefluoride(PVdF). A new type of Supercapacitor was constructed by using carbon nanofibers(CNFs) and DAAQ(l,5-diaminoanthraquinone) monomer. DAAQ was deposited on the carbon nanofibers by chemical polymerization with $(NH_4)_2S_2O_8$ as oxidant in the 0.1M $H_2SO_4$. Dried SPEEK powder was mixed with N-methyl pyrrolidone to make 10 wt.% solution in an ultrasonic bath, the slurry was cast over a glass substrate heated to $70^{\circ}C$ for solvent evaporation. And then we used solid electrolyte of SPEEK. The unit cell consist of DAAQ-CNF/electrolyte/Pt. From the analysis, it is clear that surface of carbon nanofibers was quite uniformly coated with DAAQ. The performance characteristics of the supercapacitors have been evaluated using Cyclic Voltammetry.

NaOCl (Sodium hydrochlorite) have similar smell of chloride and solution of straw color. And boiling point is $110^{\circ}C$, specific gravity is 1.0(50g/l)/1.1(100g/l), Value of pH is 12. NaOCl playa role as bleach, a oxidizer, a germicide, a decolorant, a deodorant, treatment of water supply and drainage, food addition agent because strong oxidation, bleaching, sterilization effect is had. When NaOCl is produced in electrolysis of seawater, this system is composed of injection system by directly electrolysis of salt water on the spot and sodium hydrochlorite generate a safe low concentration(0.4~0.8 %).

탄소나노튜브는 캔틸레버처럼 주어진 압력에 의해 elastic curve를 형성하게 되는데, 이러한 성질은 탄소나노튜브가 가지고 있는 young's modulus와 구조적인 형태에서 기인한다. 따라서 탄소나노튜브의 변위와 인가된 analyte의 농도에 따른 압력 사이의 관계를 이용해 가스센서로의 적용이 가능하다. 이 번 연구에서는 시뮬레이션을 통해 길이가 30nm 이고 반경이 1.5nm로 모델링 된 단일 벽 탄소나노튜브가 3000ppm와 1000ppm ethanol의 농도에 의해 형성된 elastic curve의 최대변위를 구하고, 농도와 단일 벽 탄소나노튜브의 elastic curve의 최대변위가 비례함을 보였다.

In this study, $SiO_2$ thin film was deposited on variable conditions of the RF power and working pressure by RF magnetron sputtering to apply to the Bragg reflector of the SMR type FBAR device. A crystal orientation and microstructure of $SiO_2$ thin film was studied by using the XRD, AFM and SEM. The best condition was obtained through analyzing the structural characteristics of thin film. Finally, FBAR device was fabricated with applying the best condition of $SiO_2$ thin film and the resonant characteristics was investigated by network analyzer to verify application possibility as a efficient device.

Single phase $CuInS_2$ thin film with a highest diffraction peak (112) at a diffraction angle ($2\Theta$) of $27.7^{\circ}$ was well made by SEL method at annealing temperature of $250^{\circ}C$ and annealing hour of 60 min in vacuum of $10^{-3}$ Torr or in S ambience for an hour. And the peak of diffraction intensity at miller index (112) of $CuInS_2$ thin film annealed in S ambience was shown a little higher about 11 % than in only vacuum. Single phase $CuInS_2$ thin films were appeared from 0.85 to 1.26 of Cu/In composition ratio and sulfur composition ratios of $CuInS_2$ thin films fabricated in S ambience were all over 50 atom%. Also when $CuInS_2$ composition ratio was 1.03, $CuInS_2$ thin film with chalcopyrite structure had the highest XRD peak (112). The largest lattice constant of a and grain size of $CuInS_2$ thin film in S ambience was 5.63 ${\AA}$ and 1.2 ${\mu}m$ respectively. And the films in S ambience were all p-conduction type with resistivities of around $10^{-1}{\Omega}cm$.

바이오센서 응용을 위한 대칭 및 비대칭 마하젠더 간섭계 광도파로 소자의 설계, 제작 및 광학적 응답특성을 평가하였다. 설계 제작된 광도파로 소자의 압력광원은 각각 1550nm와 632.8nm이고, 코어와 클래딩의 굴절률차는 0.45 $\Delta$%로 설계 제작하였다. 센서부(상위 클래드)의 금 박막의 미소 굴절률 변화에 따른 TE, TM모드의 특성을 분석하였다. 센서의 보다 높은 감도 개선을 위한 나노-광자결정 구조가 주목받고 있는데, 광자결정 구조의 구현를 위한 리소그래피 공정은 높은 분해능과 신뢰성 있는 나노스케일의 공정이 요구된다. 광-바이오센서의 감도 개선을 위해 센서부 표면에 2차원 나노-광자결정 배열을 제안하고 이를 구현하기 위한 Dip-Pen Nanolithography 공정에 대해 고찰하였다.

Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understanding of the relationship between the structure and function of the monolayers. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. It is revealed that the dielectric relaxation time $\tau$ of mono layers in the isotropic polar orientational phase is determined using a liner relationship between the monolayer compression speed a and the molecular area $A_m$. Compression speed a was about 30, 40, 50mm/min. also, LB layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 9 ~ 21 and we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V.

anodic deposition법으로 제조된 $MnO_2$와 (Mn, Zn) 산화물의 전도도를 측정하였다. 제조된 Mn 산화물의 조성은 XRD와 EDS를 이용하여 $MnO_2$ 와 Mn 복합산화물로 확인되었다. DV-Xa법으로 계산된 이론 전자상태 계산 결과 천이금속을 첨가하게 되면, Mn 복합 산화물의 에너지 갭이 감소하는 것으로 나타났다. anodic deposition법으로 제조된 $MnO_2$와 Mn 복합 산화물의 전기전도도를 비교하면 천이금속이 첨가된 복합 산화물의 특성이 우수한 것으로 나타났다.

In this paper, the electric properties of mercury Iodide multi-layer samples has been investigated. We measured and analyzed their performance parameters such as the X-ray sensitivity and dark-current for a mercury Iodide multi-layer X-ray detector with a dielectric layer. The digital X-ray image detector can be constructed by integrating photoconduction multi-layer that dielectric layer has characteristics of low dark-current, high X-ray sensitivity. However this process has found to have complexity on the performance of the sample. We have investigate dielectric layer that it substitute dielectric layer for HgO(Mercury Oxide). We have employed two approaches for producing the mercury Iodide sample : 1) Physical Vapor Deposition(PVD) and 2) Particle-In-Binder(PIB). In this paper fabricated by PIB Method with thicknesses ranging from approximately 180um to 240um and we could produce high-quality samples for each technique particular application. As results, the dielectric materials such as HgO between the dielectric layer and the top electrode may reduce the dark-current of the samples. Mercury Iodide multi-layer having HgO has characteristics of low dark-current, high X-ray sensitivity and simple processing. So we can acquired a enhanced signal to noise ratio. In this paper offer the method can reduce the dark-current in the X-ray detector.

The digital radiation detectors are used clinically by diagnostic apparatus. However the digital radiation detector are some problem like high operating voltage, light blurring, low conversion efficiency, low fill factor, etc. Thus we propose a new radiation detector that the photoconductor layer and liquid crystal layer are coupled in sandwich structure. X-ray absorption in the photoconductor layer controls the state of the liquid crystal via creation of charge carrier and the light modulation of liquid crystal make image formation. The advantage of the new radiation detector is that high resolution image is acquired and the signal amplification is possible by external visible light source. In this study, we study the optical properties and electrical properties of the new radiation detector to irradiate X-ray. The Mercury Iodide($HgI_2$) was used by photoconductor material, and the aluminum is used by reflective layer. The thickness of Mercury Iodide is about $200{\mu}m$, the operating voltage of the liquid crystal is 1.5~5V. The electrical properties of Mercury Iodide was measured, and the transmission efficiency of liquid crystal was measured by modulation potential.

SBN25 박막을 씨앗층으로 사용하여 이온빔으로 증착한 SBN60/SBN25 다층박막에 대하여 결정화 및 배향 특성을 고찰하였다. 기판은 Pt(111)/TiO2/SiO2/Si(100) 웨이퍼 (Pt 두께 200nm)를 사용하였으며, 약 3000${\AA}$으로 증착한후 650~$750^{\circ}C$에서 후열처리를 하였다. 제작된 박막의 증착조건 및 열처리 조건에 따른 결정화특성 변화에 대하여 연구하였으며, SBN 박막을 MFM 구조의 박막커패시터로 제조하여 강유전특성을 측정하였다.

We fabricated self-assembled monolayers(SAMs) onto quartz crystal microbalance(QCM) using viologen, which has been widely used as electron acceptor and electron transfer mediator. We determined the time dependence to resonant frequency shift during self-assembly process and observed the morphology of self-assembled mono layers by STM and investigated the electrochemical behavior of SAMs by cyclic voltammetry. Electrochemical deposition of viologen was investigated using electrochemical quartz crystal microbalance(EQCM). The redox reactions of viologen were highly reversible and the EQCM has been employed to monitor the electrochemically induced adsorption of SAMs during the redox reactions.

Ferroelectric Lithium niobate ($LiNbO_3$) thin films are fabricated on $Al_2O_3$(0001) substrate using Pulsed Laser Deposition (PLD). The various deposition conditions such as substrate temperature, oxygen pressure, and post annealing condition are investigated to deposite c-axis oriented $LiNbO_3$ thin films. Highly c-axis oriented thin films are obtained under the conditions of working pressure of 100 mTorr, deposition for 10 min at $450^{\circ}C$, and in-situ annealing for 40 min. The $LiNbO_3$ thin films are chemically etched after electric poling and the etched configurations are studied by scanning electron microscope (SEM).

Self-propagating High-temperature Synthesised (SHS) ceramics have been widely used for various electronic applications. The investigation on SHS materials has been reported. The purposes of this study were as follows: fabricating the high-temperature functional materials, and evaluating crystal structure and electrical properties. The regularities and peculiarities in SHS structures of high-temperature materials as a result of the molecular interactions during burning process are considered.

The important parts of material science in the film preparation fields and sol-gel technology are presented. For the present work, a series of amorphous films was prepared in air by sol-gel method without using some alkoxide stabilizer, which reduces the reactivity of the metal alkoxides. The choice of precursors can affect the chemical-reaction kinetics, microstructures and properties of the product. In this report author compared the crystallization behavior of oxide functional films derived from the same precursors, stressing the influence of experiment conditions and where it was possible to obtain the uniform amorphous or crystalline dielectric films. A short analysis of sol-gel technology and thin film methods about development of dielectric materials has been given.

The conductivity of diamond like carbon films embedded with silver nanoclusters were investigated as a function of silver concentrations in the film. By increasing the concentration of silver in the film from 0 to 20 at% the conductivity varied from $10^{-13}$ to $10^2\;ohm^{-1}\;cm^{-1}$. The data have been discussed within the model of a dielectric matrix containing conductive inclusions. The conductivity data analysis using percolation theory has been showed that percolation threshold occurred at Ag percentage in the film $x_c$ =5 at %.

A theoretical investigation of the solid-phase mechanochemical synthesis of nano-sized target product on the basis of dilution of the initial powdered reagent mixture by another product of an exchange reaction is presented. On the basis of the proposed 3-mode particle size distribution in mechanically activated mixture, optimal molar ratios of the components in mixture are calculated, providing the occurrence of impact-friction contacts of reagent particles and excluding aggregation of the nanosized particles of the target reaction product. Derivation of kinetic equations for mechanochemical synthesis of nanoscale particles by the final product dilution method in the systems of exchange reactions is submitted. On the basis of obtained equations the necessary times of mechanical activation for complete course of mechanochemical reactions are designed. Kinetics of solid phase mechanosynthesis of nano-TlCl by dilution of initial (2NaCl + $Tl_2SO_4$) mixture with the exchange reaction product (diluent, $zNa_2SO_4$, $z=z^*=11.25$) was studied experimentally. Some peculiar features of the reaction mechanism were found. Parameters of the kinetic curve of nano-TlCl obtained experimentally were compared with those for the model reaction KBr + TlCl + zKCl = (z + 1) KCl + TlBr ($z=z_l^*=13.5$), and for the first time the value of mass transfer coefficient in a mechanochemical reactor with mobile milling balls was evaluated. Dynamics of the size change was followed for nanoparticle reaction product as a function of mechanical activation time.

High surface area electrodes for aluminum electrolytic capacitors are produced by AC electrochemical processes. Optimization of crystallographic etch pit growth on aluminium during AC etching of cathode film for aluminium as electrolytic capacitor has been established. In this work, we present the observations of pit distributions by galvanostatic measurements. The effects of electrolyte concentration, current density, frequency, various pre-treatments and etching time have been studied. The specimen was pretreated in 0.5M NaOH and 1M HCl at $40\sim60^{\circ}C$, and transferred into a cell containing 1M HCl, then various mol $H_2SO_4$ etchant was added. Pit size distributions were determined with scanning electron microscopy (SEM).

A series of inorganic-organic hybrid membranes were prepared with a systematic variation of titanium dioxidenanoparticles content. Their water uptake, methanol permeability and proton conductivity as a function of inorganic oxide content were investigated. The results obtained show that the inorganic oxide network decreases the proton conductivity and water swelling. It is also found that increase in inorganic oxide content leads to decrease of methanol permeability. In terms of the morphology, membranes are homogeneous and exhibit a good adhesion between inorganic domains and the polymer matrix. The properties of the composite membranes are compared with the standard nation membrane.

This paper describes resonant frequency of the structural behavior of micro-cantilever beam simulated by FEM (Finite Element Method). The resonant characteristics and the sensitivity of cantilever-shaped SOI resonant were measured for the application of chemical sensor. The resonant frequency of the fabricated micro-cantilever system was found to be 5.59kHz when the size of cantilever is $500{\mu}m$ long, $100{\mu}m$ wide and $1{\mu}m$ thick. Generation of resonant frequency measured by Modal Analysis is resulted in length of cantilever. The length was found to be a dominant factor for the selection of required resonant frequency range. On the other side, the width had influenced very little on either the magnitude of resonant frequency or the sensitivity.

A solar cell is an element to transform the solar light energy into the electric energy in a moment. The single crystal element of high quality on which many studies were conducted in the past has a high efficiency of energy transformation, but its price competitiveness is so poor that it has failed to be popularized However, recently, in terms of an environment-friendly alternative energy, studies on applicability of the polycrystal solar cell have been actively under way. Among subject substances for such solar cell, $CuInSe_2$ has several good physical properties so that the greatest attention is paid to it as an optical absorption layer material for a low-cost solar cell of high efficiency. In order to manufacture the $CuInSe_2$ compound thin film, the unit element was deposited by using the sputtering method and the evaporation method and the heat treatment process was used in an electric furnace. Thereby, we intended to get a single-phase $CuInSe_2$ compound thin film.

In this study, we optimized the process of Si anisotropy etching by combing tetramethyl ammonium hydroxide (TMAH) etching process with ultrasonic wave technology. New ultrasonic TMAH etching apparatus was developed and it was used for fabricating a $20{\mu}m$ thick diaphragm for Si piezoresistive pressure sensors. Based on comparison study on etch rate and surface flatness, it was observed that the Si anisotropy etching methode with new ultrasonic TMAH etching apparatus (at 40 kHz/ 500 watt) was superior to conventional etching methods with TMAH or TMAH+ammonium persulfate(AP) solutions.

$\o-LiMnO_2$ is known to have poor cycle performance causing the irreversible phase transformation on cycling. In this paper, the effect of chemical substitution on improving cycle performance of $o-LiMnO_2$ was studied at the compositions of $LiCr_xMn_{1-x}O_2$(x=0, 0.1, 0.2, 0.4). XRD is showed that structure of $LiCr_xMn_{1-x}O_2$ transformed from orthorhombic to spinel according to the increase of substitute degree. For lithium ion battery applications, $LiCr_xMn_{1-x}O_2$/Li cell were characterized electrochemically by charge/discharge cycling.

$LiMnPO_4$ particle were prepare by a hydrothermal reaction. The particles prepared by adding polyethylene glycol(PEG) and carbon to the starting reaction solution were fine crystalline in the range of 200-300nm. The discharge capacity of the sample as a lithium secondary battery was $25mAhg^{-1}$ at $0.04mAcm^{-2}$, larger than that of the sample prepared by the hydrothermal method without PEG and carbon.

RF Micro switches is a miniature device or an array of integration devices and mechanical components and fabricated with Ie batch-processing techniques. RF Micro switches application area are in phased arrays and reconfigurable apertures for defence and telecommunication systems, switching network for satellite communication, and single-pole double throw switches for wireless application. Recently, RF Micro switches have been developed for the application to the milimeter wave system. RF Micro switches offer a substantilly higher performance than PIN diode or FET switches. In this paper, SPDT(single-pole-double-throw) switch are designed to use 10 GHz. Actuation voltage and displacement are simulated by tool.

The purpose of this study is to research and develop $LiFe_xMn_{1-x}PO_4$ cathode for lithium polymer batteries. $LiFe_xMn_{1-x}PO_4$ cathode active materials were prepared using a solid-state reaction by adding carbon black to the synthetic precursors. We investigated cyclic voltammetry and charge/discharge cycling of $LiFe_xMn_{1-x}PO_4$/SPE/Li cells. The discharge capacity of $LiFe_{0.5}Mn_{0.5}PO_4$ was l26mAh/g and 110mAh/g at 1st and 10th cycle.

This research describes a new constructing method of multifunctional biosensor using many kinds of biomaterials. A metal particle and an array was fabricated by photolithographic. Biomaterials were immobilized on the metal particle. The array and the particles were mixed in a buffer solution, and were arranged by magnetic force interaction and self-assembly. A quarter of total Ni dots were covered by the particles. The binding direction of the particles was controllable, and condition of particles was almost with Au surface on top. The particles were successfully arranged on the array. The biomaterial activities were detected by chemiluminescence and electrochemical methods.

Novel fluoroionophore of dibenzothiazolyl-dibenzo-crown ethers were synthesized from diformal-dibenzo 18-crown-6 (24-crown-8) with 2-aminothiophenol, and they were characterizated by $^1H$-NMR, $^{13}C$-NMR, IR spectrum, Mass spectrum, elemental analyses, respectively. The fluorescent properties of the newly synthesized crown ether were examined with $Li^+$, $Na^+$, $K^+$, $Rb^+$, $Cs^+$, $NH_4^+$ and $CF_3COOH$, respectively. With protonation using $CF_3COOH$, the absorption bands of the new crown ethers are further blue shifted, the maximum emission wavelengths further red shifted.

In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow and input current. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical characteristics, surface roughness and transmittance of the ITO thin films were evaluated by Hall Effect Measurement, AFM, and UV-VIS spectrometer respectively. In addition, I-V properties of OLED cells were measured by 4156A(HP).

In this study, Al doped ZnO(AZO) thin film were prepared on glass substrates by FTS(Facing Targets Sputtering) system. We investigated electrical, optical and structural properties of AZO thin film with the substrate temperature of the R.T, $100^{\circ}C$, $200^{\circ}C$ and the post-annealing. The crystallinity of AZO thin film was increased with increasing the substrate temperature and post-annealing temperature $600^{\circ}C$. The remarkable change of the resistivity with the substrate temperature didn't found and the resistivity with post-annealing was increased slightly.

In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow, input current and working gas pressure. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical characteristics, surface roughness and transmittance of the ITO thin films were evaluated by Hall Effect Measurement, AFM, and UV-VIS spectrometer respectively. In addition, I-V properties of OLED cells were measured by 4156A(HP).

3-dimension object's feature measurement is used several industrial field to produce for examination of demanded high quality products by using optical measurement method. 3-dimension object's feature measurement is separated surface scanning and surface non-scanning. In this research, we illuminated interfero-pattern to object, it was constructed with Michelson interferometer by using laser is one of surface non-scanning method. And we extracted phase-map, it is one of featural measurement analysis of 3-dimensional object by using a phase shifting theory.

At present, characteristic of high color reproduction for LCD TV is needed in Display market according to start mass production of LCD TV. Therefore development target for LCD is focused on improvement of color reproduction. The improving methods of high color reproduction are alteration of color Filter or Red, Green, Blue phosphor alteration of CCFL. But decrease of luminance and panel transmittance is caused by alteration of Color Filter. Accordingly, we completed LCD with high color reproduction by the most suitable emission spectrum of CCFL phosphor at panel with conventional color filter. In this experiment, we knew that LCD applied to CCFL with high color rendering characteristic had color reproduction range of 81% compared with NTSC in CIE color coordinate. According to increase of intensity peak and alteration of Red, Green, Blue phosphor spectrum, we made LCD with high color reproduction characteristic. In conclusion we achieved improvement of color reproduction ratio by alteration of CCFL phosphor without changing color filter.

According as CCFL(Cold Cathode Fluorescent lamp) of light source in Backlight unit for Note PC (Personal computer) is presently needed to low power consumption and long life time, the development focus of CCFL is going on the discharge gas, phosphor and electrode material. First of all, discharge voltage characteristic of CCFL is closely connected with electrode material For low discharge voltage, the characteristic of electrode material is needed to low work function, low sputtering ratio and superior manufacturing property. We developed new CCFL with Nb/Ni Clad electrode superior to conventional CCFL. Because Nb/Ni Clad electrode with Ni material and Nb material, the electrical characteristic is superior to other electrode materials. The electrode of Nb/Ni Clad is composed that Ni of outside material has superior manufacturing property and Nb of inside material has low work function. Nb/Ni Clad of new electrode material is made by process of Rolling mill at high pressure and heat treatment. We compared electrical characteristic of Nb/Ni clad electrode with conventional Mo electrode by measurement. Mo electrode and Nb/Ni Clad electrode of cup type with diameter 1.1 mm and length 3.0mm are used to this experiment. Material content of Mo electrode is Mo 100%. But, Nb/Ni Clad electrode is composed by content of Nb 40% and Ni 60%. The result of comparison measurement between new CCFL with Nb/Ni Clad electrode and conventional CCFL was appeared that CCFL with Nb/Ni Clad electrode had superior characteristic than conventional CCFL. As a result of experiment, we completed Note PC with low power consumption and long life time by application of new CCFL with Nb/Ni Clad electrode.

This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on flexible plastic substrates using amorphous silicon (a-Si) precursor films by sputter deposition. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The precursor films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure.

Recently, organic light emitting diodes(OLEDs) is widely used as one of the information display techniques. We synthesized 2-(2-hydroxyphenyl)benzoxazole($Zn(HPB)_2$). We studied the luminescent properties of OLEDs using $Zn(HPB)_2$. The ionization potential(IP) and the electron affinity(EA) of $Zn(HPB)_2$ investigated using cyclic-voltammetry(C-V). The JP, EA and Eg were 6.5eV, 3.0eV and 3.5eV, respectively. The PL and EL spectra of $Zn(HPB)_2$ were observed at the wavelength of 4S0nm. We used $Zn(HPB)_2$ as an emitting layer and hole blocking layer. At the experiment about hole blocking effect, we inserted $Zn(HPB)_2$ between emitting material layer(EML) and cathode, and hole transport layer(HTL) and emitting material layer(EML). We measured current density-voltage and luminance-voltage characteristics at room temperature.

Alignment characteristic of liquid crystal (LC) on in-cell retarder which is composed of reactive mesogens has been tested. The in-cell retarder which is polymerized on top of the homogeneous alignment layer (AL) has an optic axis along the rubbing direction of the homeogenous AL and does show good alignment effect of the LC without showing any defects, which possibly allows a skip of another AL on the in-cell retarder that was required conventionally to control alignment of the LC. However, the measured pretilt angle is only 0.04 degree so that disclination lines are generated for a cell that uses the in-cell retarder as an AL when the LC is tilted upward by a vertical electric field.

In this study, the threshold voltage and the response time of thermal stressed TN-LCDs showed the same performances on none thermal stressed TN-LCDs. There was little change in TN cells. Also, while increasing thermal stress time, the transmittances of TN-LCDs on the rubbed PI surface were almost the same, But the thermal stability of TN cell was deteriorated.

PDP에 사용되는 유전체, 격벽재, 봉착재 등의 glass들은 모두 PbO를 다량 함유하는 저융점 유리조성계로 되어있다. 최근 환경규제에 따라 Pb 대체 재료의 개발이 필요하게 되었으며, 그에 대한 많은 연구들이 진행되고 있다. 본 연구에서는 투명 유전체를 겨냥한 저융점 이면서 무해한 3성분계 Pb-free 유리를 제조하였다. 또한 SnO 계 유리와의 혼합 용융에 의한 영향을 고찰하였으며, 유리로서의 고유물성과 응용용도별 특성을 함께 고찰하였다.

옴니(omnidirectional)-PBG(photonic bandgap)의 크기는 쌍을 이루는 광자결정 재료의 고유 굴절률, 충진율 및 두께에 의해 결정되는 것이 일반적이다. 그러나 광자결정체가 다중주기를 가지도록 제작하면 옴니-PBG의 크기를 변화 시킬 수 있다. 본 연구에서는 Si/$SiO_2$를 기본 구조로 하는 광대역 옴니-PBG용 광자결정 구조를 설계, 제작하고 그 특성을 평가 하였다. 각각 단일 주기 $\Lambda_1$(426.9nm) 및 $\Lambda_2$(306.9nm)를 갖는 8N-Si/$SiO_2$ 광자결정에 대해 TE/TM-편광광 $5^{\circ}$ 및 $45^{\circ}$ 입사각에 대한 반사-스펙트라 측정결과는 설계값과 일치하였다. 특히 이중주기 $(8N\cdot{\Lambda}_1+8N\cdot{\Lambda}_2)$를 갖도록 제작된 Si/$SiO_2$ 광자결정은 입사각 $5^{\circ}$의 TE-편광광 반사-스펙트라 측정결과, 약 1050-2500nm의 광대역 파장범위에서 광자 밴드 갭을 보였다.

The global consumption of aspheric surfaces will expand rapidly on the Electronics and Optical Components, Information and Communications, Aerospace and Defense, and Medical optics markets etc. We must research on market, technology forecast and analysis of aspheric surfaces that is a principle step of ultra precision machine technology with a base one of optical elements. Especially, F-theta lens is one of the important parts in LSU(Laser scanning unit) because it affects on the optical performance of LSU dominantly. The core is most of important to produce plastic F-theta lens by plastic injection molding method, which is necessary to get the ultra-precision aspheric and non-axisymmetric machine processing technology.

In order to improve the efficiency of dye-sensitized solar cell (DSC), $TiO_2$ electrode screen-printed on transparent conducting oxide (TCO) substrate was sintered in variation with different temperature(350 to $550^{\circ}C$). $TiO_2$ electrode on fluorine doped tin oxide (FTO) glass was assembled with Pt counter electrode on FTO glass. I-V properties of DSC were measured under solar simulator. Also, effect of sintering temperature on surface morphology of $TiO_2$ films was investigated to understand correlation between its surface morphology and sintering temperature. Such surface morphology was observed by atomic force microscopy (AFM). From the measurement results, at sintering temperature of $500^{\circ}C$, both efficiency and fill factor of DSC were mutually complementary, enhancing highest fill factor and efficiency. Consequently, it was considered that optimum sintering temperature of $\alpha$-terpinol included $TiO_2$ paste is at $500^{\circ}C$.

The $ZnGa_2O_4$:Mn phosphor was synthesized through solid-state reactions at the various molar ratio of Mn from 0.002 % to 0.01 %. Structural and optical properties of the $ZnGa_2O_4$:Mn phosphor was investigated by using X-ray diffraction (XRD), and cathodoluminescence (CL) measurements. The XRD patterns show that the Mn-doped $ZnGa_2O_4$ has a (311) main peak and a spinel phase. Also the emission wavelength shifts from 420 to 510 nm in comparison with $ZnGa_2O_4$ when Mn is doped in $ZnGa_2O_4$. These results indicate that $ZnGa_2O_4$:Mn phosphors hold promise for potential applications in field-emission display devices with high brightness operating in green spectral regions.

Al doped zinc oxide films (ZnO:Al) were deposited on glass substrate by RF magnetron sputtering from a ZnO target mixed with 2 wt% $Al_2O_3$. The as-deposited ZnO:Al films were rapid-thermal annealed. Electrical properties and structural evolution of the films, as annealed by rapid thermal process (RTP), were studied and compared with the films annealed by conventional annealing process. RTP, the (002) peak intensity increases and the electrical resistivity decreases by 20%, after RT annealing. The effects of RT annealing on the structural evolution and electrical properties of RF sputtered films were further discussed and compared also with the films deposited by DC magnetron sputtering.

본 연구에서는 NSOM(Near-field Scanning Optical Microscope)에서 정밀도의 중요한 요소로 작용하는 100 ~ 200nm Scale의 Optical aperture를 제작하기 위해 Optical Fiber를 이용하여 $CO_2$ Laser Heating Pulling Method에 의하여 제작하고자 한다. Heating Pulling Method 에서 Fiber Tip의 정밀도 및 제작 재현성에 영향을 미치는 중요한 기존의 여러 Fiber Tip 구현방법 중 본 연구에서는 Pulse Width[$PW_{(SEC)}$] 와 Pulling Force 두 요소에 있어서 상호관계를 연구하였으며, 연구 결과 두 변수간의 최적화된 파라미터인 PW 0.07 ~ $0.10_{(SEC)}$ 와 Pulling force 0.2 ~ 0.81b의 구간에서 error율이 최소화되는 범위를 찾을 수 있었고, 그 결과 최적의 상태는 $0.08_{(SEC)}$와 0.21b에서 팁들은 첨예화 되었고 95% 이상의 재현성 및 신뢰성을 얻을 수 있었다.

본 연구는 TFT-LCD의 배경광원인 Backlight Unit(BLU)의 구조를 광학 시뮬레이션을 통하여 분석함으로써 BLU에서의 광효율을 극대화하는데 초점을 두었다. 일반적으로 LCD Monitor BLU는 형광램프, 반사시트, 램프 리플렉터, 도광판, 광학시트로 구성된다 여기에서는 20.1 인치 6램프로 구성된 Monitor용 Side Type BLU에 대하여 램프 리플렉터의 형상, 램프 리플렉터의 내부 공간 변화와 그에 따른 램프의 위치, 램프사이의 배열에 따른 램프에서 도광판으로의 입사광량을 광학 시뮬레이션을 통하여 분석하였다. 위 시뮬레이션의 결과, 램프리플렉터가 'ㄷ' 형상일 때, 램프리플렉터 내부공간의 약 1:2 되는 지점에 램프가 위치하고 Center Lamp가 도광판에 최대한 가깝게 위치할 때 입사광량이 최대가 되어 BLU에서의 광효율이 향상됨을 알 수 있었다.

Blue-emitting polymers containing carbazole units In main chains were synthesized by palladium catalyzed polycondensation of aniline with dibromo-substituted monomers such as 3,6-dibromocarbazole, N-(2-ethylhexyl)-3,6-dibromocarbazole, and bis[6-bromo-N-(2-ethylhexyl)-carbazole-3-yl], respectively. All synthesized polymers exhibited relatively good solubility in common organic solvents, considerable molecular weights and high resistance to thermal degradation. From UV-Vis absorption and photoluminescence (PL) spectra of these solution-processable polymers, $\lambda_{max,UV}$ were in the range of 290 ~ 340 nm and $\lambda_{max,PL}$ were in the blue emission range of 440 ~ 478 nm, The polymers had HOMO energy (-5.19 ~ -5.64 eV) and wide band gap energy (2,91 - 3.42 eV).

Efficient electron injection is essential to achieve bright and efficient organic light-emitting diodes (OLEDs). In spite of high work function of Al, it is a common cathode because of its stability. In this paper, to overcome the poor electron injection in OLEDs with Al cathode, OLEDs with various composite cathodes were fabricated and investigated using a conventional OLEDs structure of indium tin oxide ITO/NPB(40 nm)/$Alq_3$(50 nm)/Al. composite cathodes were composed of alkaline materials such as Ca and Li, Al deposition or codeposited with AI. We showed best performance at the device with composite cathode (LiF/Al).

The devices with a structure of ITO/$Alq_3$/Al were fabricated and their impedance properties were analyzed. It is obtained that an effect of resistance $R_p$ of the device was dominant at the low frequency and the high voltage region, emitting region, and it is ignored at the high frequency region. Capacitance $C_p$ appears intensely in a range of all frequencies of non-emitting region, below turn on voltage.

The Analog data is impossible to perfect reconstruct original data at a hologram data storage because of noise such as cross talk. So it is necessary that data can be stored by digital signal unavoidably. Therefore this work deals with experiments from this point of view through writing & reading of digital data. We stored 256bit digital data at one point on As-Ge-Se-S chalcogenide thin film and we reconstruct original data of 100% through the specified algorithm such as the histogram equalization, the interactive correction, etc. This result shows that the data is able to reconstruct under relative low diffraction efficiency. As the result, we expect the possibility of chalcogenide thin film for HDDS as the analysis of the effective resolution refer to reconstruction rate and diffraction efficiency.

유기발광소자의 발광층의 전압에 따른 임피던스의 변화를 살펴보았다. 임피던스는 전압의 변화에 따른 의존성을 보이며, 그에 따른 임피던스와 Cole-Cole 반원의 변화를 전기전도기구와 비교하여 살펴보았다. 소자의 구조는 ITO/$Alq_3$/Al의 구조로 발광층의 두께는 60 nm로 열증착하여 실험하였다. 실험에서 전기전도기구의 Ohmic 영역, SCLC 영역, 부성저항영역, TCLC 영역에서 각각 임피던스를 측정하였고, 전압의 증가에 따라 임피던스의 크기가 감소하고, 위상각은 0V에서 용량성을 보이다가 발광영역에서 저항성을 나타내는 것을 알 수 있었다. 또한 전압에 따른 Cole-Cole 반원을 살며보면 전압이 증가할수록 반원의 크기가 감소하는 것을 알 수 있으며, 이를 통해 간단한 등가회로를 예측할 수 있었다.

The field sequential liquid crystal display (FSLCD) does not need a color filter so that it is suitable for high resolution display. However, FSLCD has a drawback which requires a fast response time of sub-5 ms. We have studied the FSLCD with electrically controlled birefringence (ECB) mode. The ECB mode exhibits fast response time, high transmittance, low operating voltage and adequate viewing angle with a help of optical compensation films. In this paper, we present electro-optic characteristics of the ECB mode using a discotic film.

Fringe-field switching mode which has a horizontal and vertical electric field exhibits high transmittance and wide viewing angle characteristics. In the FFS mode, a passivation layer between common and pixel electrodes exists, which functions as preventing current leakage of fringe-field. In this paper, we have studied LC behavior, transmittance and operating voltage characteristics with applied voltage as a function of the passivation layer thickness and defined optimal value of the layer to be about $0.5{\mu}m$.

We have investigated the Electro-Optical Characteristics for a nematic liquid crystal (NLC) alignment with rubbing alignment method on polyimide surfaces using plastic substrates. It was found that monodomain alignment of NLC is obtained with rubbing alignment method on polyimide surfaces using thin plastic substrates. EO characteristics of the TN-LCD with a rubbed PI surface based on polymer are almost the same as that of the TN-LCD with a rubbed PI surface based on glass. However, the transmittances of the TN-LCD with a rubbed PI surface based on polymer is less than that with a rubbed PI surface based on glass.

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}$ to $45^{\circ}$ of incident angle. The good LC alignment is main-tained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to 300.

본 연구에서는 $Al_2O_3$, $SiO_2$ 판상체 위에 저굴절 및 고굴절 금속 산화물을 다층 교차 증착하여 Pearl Pigment를 sputtering 공법을 이용하여 증착하였다. Pearl Pigment는 Essential Macleod program 을 이용한 색상과 증착된 pigment의 색상이 파장에 따라 blue, violet, pink, red, orange, yellow, green 등(Wave length 450~623 nm)으로 동일하게 나타났고, 기존의 제품에 비해 색상효과기 뛰어나고, 표면 morphology가 우수하였다. 광학 현미경 및 주사전자현미경(SEM)으로 막 두께, 표면 조직 및 입자 크기를 측정하였고, EDS, XRD를 이용하여 정성 및 정량 분석을 하였다.

비정질 실리콘 (a-Si)의 수소화를 통해 활성화 수소가 비정질 실리콘내의 댕글링본드 (dangling bond) 와 결합 하므로 에너지밴드의 국재준위(localized state)를 감소시켜 불순물 도핑이 가능하게 되므로 a-Si 이 전자소자로서 이용 가능하게 되었다. 이에 착안하여 본 연구에서는 경사($0^{\circ}$, $45^{\circ}$, $80^{\circ}$) 증착을 통해 비정질 칼코게나이드($a-As_{40}Ge_{10}Se_{15}S_{35}$) 박막을 제작하고 그 박막을 수소화처리 (15~20atm at $150\sim190^{\circ}C$)하여 처리 전 후의 surface morphology 변화 및 광학적 특성 변화를 고찰하였다. $a-As_{40}Ge_{10}Se_{15}S_{35}$ 박막의 SEM 측정을 통해 $40^{\circ}$와 $80^{\circ}$ 경사 증착된 $a-As_{40}Ge_{10}Se_{15}S_{35}$ 박막에서 각각 18.8nm 와 160nm의 transition layer와 박막의 기둥(columnar)구조가 형성됨을 관찰하였다. 특히, $80^{\circ}$ 증착박막의 경우 수소처리전 columnar구조는 약 $65\sim70^{\circ}$의 기둥 각을 가지고 형성되었고 수소화 처리를 통해 기둥구조가 붕괴 되었다. $70^{\circ}$ 경사 증착된 $a-As_{40}Ge_{10}Se_{15}S_{35}$ 박막은 $0^{\circ}$에 따른 박막 보다 흡수단 부근에서 약 20%의 투과도 증가와 광 에너지 갭 ($E_{op}$)의 증가를 관찰 할 수 있었다. $80^{\circ}$경사 증착된 수소처리 박막에서 흡수단 부근의 투과도가 약 10%증가 되었고, 광 에너지 갭은 약 0.07eV 증가 하였고, PL intensity는 흡수단 부근에서 증가한 것을 확인 할 수 있었다. 이러한 변화들은 경사 증착된 $a-As_{40}Ge_{10}Se_{15}S_{35}$ 박막 내의 상대적으로 원자 밀도가 큰 기둥(columnar)구조가 생성되고, 이 원자 밀도가 높은 기둥구조의 댕글링본드와 주입된 수소가 흡착하여 에너지대의 국재준위를 감소시키기 때문으로 판단된다.

A portable terminal assistant market grows rapidly every year and it requires many change in research on display devices. Among many newly developing methods, OLED(Organic Light Emitting Diode) is considered an advanced flat display device because its excellent characteristics, including high speed response, full color performance, low power consumption and flux of panel. However changes in the market of display shows that the market will require 3-dimensional images, but it is hard for existing 2-dimensional displays to make 3-dimensional images. Therefore we will try to find various methods such as holograms. In this paper, we will show existing flat displays can make 3-dimensional images by applying Lenticular Screen printing techniques on the organic semiconductor display device.

Aluminum doped zinc oxide films (ZnO:Al) were deposited on glass substrate by DC magnetron sputtering from a ZnO target mixed with 2 wt% $Al_2O_3$. The effects of substrate bias on the electrical properties and film structure were studied. Films deposited with positive bias have been annealed at $600^{\circ}C$ using rapid thermal anneal (RTA) process. The effects of RTA on the evolution of film microstructure are to be also studied using X-ray diffraction, transmission electron microscopy, and atomic force microscopy. Positive bias sputtering may induce lattice defects caused by electron bombardments during deposition. The as-deposited film microstructure evolves from the film with high defect density to more stable film condition. The electrical properties of the films after RTA process were also studied and the results were correlated with the evolution of film microstructures.

본 연구에서는 TFT-LCD(Thin Film Transistor-Liquid Crystal Display)의 배경광원인 BLU(Back Light Unit)의 고효율화, 고품질화를 통한 원가 절감을 달성하기 위해 BLU의 대표적 핵심부품중에 하나인 프리즘 시트를 사용하지 않는 구조의 MNT용 BLU를 개발하는데 목적을 두었다. 고효율의 BLU를 만들기위하여 17인치 BLU의 도광판의 상, 하면에 Prism 형상을 구현하였으며, 광학적 시뮬레이션을 통하여 먼저 가능성을 검토하였고, UV에 반응하는 Resin을 경화시키는 방법을 이용하여 일반 도광판에 프리즘형상을 각인(Imprint)시키는 방법으로 실물을 재현하였다. 실험 결과 프리즘 시트를 사용하지 않는 구조의 MNT용 17인치 BLU에서 중심휘도 4,984nit, 균일도 70% 달성하였다.

In this report, we demonstrate a high performance polymer thin-film transistor fabricated on a paper substrate. As a water barrier layer, parylene was coated on the paper substrate by using vacuum deposition process. Using poly (3-hexylthiophene) as an active layer, a polymer thin-film transistor with field-effect of up to 0.086 $cm^2/V{\cdot}s$ and on/off ratio of $10^4$ was achieved. The fabrication of polymer thin-film transistor built on a cheap paper substrate is expected to open a channel for future applications in flexible and disposable electronics with extremely low-cost.

The effects of addition of $D_2$ to conventional gases [Ne-Xe and He-Ne-Xe] on the discharge characteristics were investigated in this work with the aim of improving the voltage margin, the wall charge and the jitter. The addition of an extremely small gas-inlet amounts of $D_2$ increased the number of electrons which improves. the $Xe^*$ density and $Xe_2^*$ density. As a result, the voltage margin, the jitter and the wall charge increased.

In case of ITO/MEH-PPV/Al structure, the quantity of charge carriers flowing through the organic material was few and the density of them is fixed. The electric field inside of the device almost didn't change with the position. On the other hands, in case of Au/MEH-PPV/Au structure, the hole density increased rapidly nearby the anode but decreased nearby the cathode. The space charge phenomenon followed sufficient hole injection resulted in the change of the electric field with the position inside of the device. We verified that the result of the current-voltage simulation corresponded with experimental result.

Several iridium based complexes were investigated as blue phosphorescent dopants. They are achieved about 100 % quantum efficiencies due to utilization of both singlet and triplet excitons in the radiative processes. We have fabricated phosphorescent OLED with 8 % Ir$(ppz)_3$ as a triplet emissive dopnat in diverse host materials. In this study, the CBP obtained the luminance efficiency of 0.20 cd/A adapts to the host material. Furthermore, we synthesize metalorganic phosphor complexs based on Ir heavy metal with different ligands as to $Ir(ppz)_2acac$, $(Im)_2Ir(acac)$, $(Im-R)_2Ir(acac)$.

We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerene(C60) as electron acceptor(A) with doped charge transport layers, and BCP and $Alq_3$ as an exciton blocking layer(EBL). We have measured the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source. We were use of $Alq_3$ layer leads to external power conversion efficiency was 2.65% at illumination intensity $100mW/cm^2$. Also we confirmed the optimum thickness ratio of the DA hetero-junction is about 1:2.

본 논문에서는 As-Ge-Se-S 박막에 (P:P) 편광빔을 이용하여 회절격자를 형성시키고 비편광 (Non-Polarization) 빔을 이용하여 생성된 격자를 소거시키고 그에 따른 회절효율을 조사 하였다. (P:P) 편광으로 기록된 회절 효율은 시간이 지나도 최대 회절효율의 변화가 없었으나 비편광 빔으로 기록된 회절효율은 시간이 지남에 따라 급격한 회절효율의 감소를 보인다. 따라서 (P:P) 편광으로 회절격자를 형성시키고 비편광빔으로 격자의 소거를 진행하여 약 83%의 회절격자의 소거가 이루어졌다.

We made use of $Alq_3$ which is the representative light-emitting material. Electric conduction mechanism were analyzed in this paper. We have also measured current density-thickness-voltage characteristics with thickness variation from 60 to 400 nm. We analyzed the low electric and the high electric field in theoretically.

We have studied the transmittance of fringe-filed switching(FFS) using a liquid crystal with positive dielectric anisotropy. Generally, FFS having positive dielectric anisotropy has less transmittance than FFS using negative dielectric anisotropy. FFS mode transmittance depends on horizontal director deformation, however fringe filed is composed of vertical and horizontal field. Vertical field in the middle of electrode suppresses the transmittance of FFS mode, especially when we use positive one. So, it is important to prevent the LC director from the effect of vertical field. We changed the splay elastic constant and checked the transmittance. The transmittance of FFS having positive dielectric anisotropy was improved. Less tilted LC directors improve the transmittance of FFS using positive dielectric anisotropy. We can improve the transmittance by using LC which have high splay elastic constant when another LC properties are equal.

To observe the orientation of carbon nanotubes (CNTs) dispersed in nematic liquid crystal (NLC), CNT-doped homogeneously-aligned NLC cells driven by in-plane field was fabricated. The CNTs were aligned with a LC director in the initial state, whereas the CNTs disturbed the LC director above critical ac field. We observed motional textures in the form of vertical stripes in the local area between electrodes, which were associated with a deformation of the LC director orientation. This suggests that CNTs start to vibrate three dimensionally with translational motion. The hysteresis studies of voltage-dependent transmittance under dc electric field show that the amount of residual dc is greatly reduced due to ion trapping by CNT.

Top emission OLED 소자에 사용되는 ITO(Indium-Tin-Oxide)의 저항을 개선하여 보다 낮은 저항을 가지는 전극을 제작하기 위해 AZO(ZnO-Ag-ZnO)를 제작하였다. AZO박막은 기존의 ITO박막이 수십 $\Omega$을 나타내던 것과 비교하여 $8\Omega$으로 매우 낮은 저항을 나타내었다. 투과율은 84%로 기존의 ITO박막과 유사한 성능을 나타내었다.

The principal problems in development of dielectric paste materials for PDP(plasma display panel)are PbO free paste and low melting temperature. We prepared PbO free paste from glasses in the system $ZnO-B_2O_3-Bi_2O_3-SiO_2$, DTA, and XRD were used to characterize $ZnO-B_2O_3-Bi_2O_3-SiO$ glasses. In this present study, PbO free paste had thermal expansion of $74\times10^{-7}/^{\circ}C$, DTA transformation point of $470^{\circ}C$, and firing condition of $540^{\circ}C$, 20min.

파장 분할 다중화 방식 (WDM)의 광통신은 중앙 기지국에서 각 가입자에게 서로 다른 파장을 할당하여 동시에 데이터를 전송하는 방식으로서 각 가입자는 할당된 파장을 이용하여 항상 데이터를 송/수신할 수 있고 각 가입자에게 대용량의 데이터를 전송할 수 있을 뿐만 아니라 통신의 보안성이 뛰어나고 성능 향상이 용이하다 따라서 상, 하향(양방향, bidirectional) 3 파장 WDM-필터 소자(Flat band-path filter)는 광 가입자망 구축에서 통신 방송을 융합한 양방향 고화질 멀티미디어 서비스 사업에 반드시 필요로 하는 원천 부품이다. 본 연구에서는 1차원 광자결정을 이용한 저 손실 양방향 3 파장 WDM-필터를 얻을 수 있는 이론적 모델을 설계하고 그에 따라 2-cavity $Ta_2O_5/SiO_2$ 1차원 광자결정체를 제작하고 그 특성을 고찰 하였다. 파장에 따른 투과도 측정 결과 1550nm파장에서 투과되고 1310nm 및 1490nm파장에 대한 차단이 이론값과 일치하였다. 1550nm 파장 대에서 손실이 매우 낮은 flat-투과 밴드가 생성되었다. 특히 입사각도에 따라 flat-band 중심 파장의 변화를 이용하므로 새로운 개념의 WDM 소자로의 응용이 가능하다.

A voltage driving AMOLED(Active Matrix Organic Light Emitting Diode) is useful for large-sized, high resolution OLED display. The conventional 2-TFTs, 1-CAP AMOLED circuit suffer from the threshold voltage variation of TFT. In this paper, a new AMOLED structure is proposed. It is composed of 5-TFTs and 2-capacitors. It is described that the operating principle and the characteristics of the proposed structure and is verified the performance by HSPICE simulation. The result of simulation shows that the effect of the threshold voltage variation in this circuit, is able to neglect.

We have used ITO/$Alq_3$/Al structure to study electrical conduction mechanism in $Alq_3$ based organic light emitting diode. Current-voltage characteristics were measured at room temperature by varying the thickness of $Alq_3$ layer from 60 to 400nm. We were able to prove that there are three different mechanism depending on the applied voltage; Ohmic, SCLC (space-charge-limited current). and TCLC (trap-charge -limited current) mechanism.

Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/$Alq_3$/Al. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-l,1'-diphenyl-4,4'-diamine(TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum($Alq_3$) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10K and 300K. We analyzed an electrical conduction mechanism of the OLEDs using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling.

Organic photovoltaic effects were studied in a device structure of ITO/CuPc/Al and ITO/CuPc/$C_{60}$/BCP/Al. A thickness of CuPc layer was varied from 10 nm to 50 nm, we have obtained that the optimum CuPc layer thickness is around 40 nm from the analysis of the current density-voltage characteristics in CuPc single layer photovoltaic cell. From the thickness-dependent photovoltaic effects in CuPc/$C_{60}$ heterojunction devices, higher power conversion efficiency was obtained in ITO/20nm CuPc/40nm $C_{60}$/Al, which has a thickness ratio (CuPc:$C_{60}$) of 1:2 rather than 1:1 or 1:3. Light intensity on the device was measured by calibrated Si-photodiode and radiometer/photometer of International Light Inc(IL14004).

A way of measuring an efficiency of organic light-emitting diodes are studied. The efficiency is obtained from the current-voltage-luminance characteristics of the devices. Basically, number of charge carriers are obtained from the current-voltage characteristics, and the number of photons are obtained from the current of Si-photodetector. The organic light-emitting diodes are assumed as a lambertian light source and a program is made for calculating the efficiency. A device structure of ITO/TPD/$Alq_3$/Al is manufactured using thermal-vapor evaporation. This device is set into a measuring system and measured the efficiency. The efficiencies are measured using the lab-made program and commercially available equipments. The obtained values are similar to each other within 10% uncertainty.

In this paper, describes the fabrication and dielectric insulation characteristics experimental results of the model cable for the 22.9kV class HTS power cable. The model cable were tested with partial discharge(PD), AC and impulse withstand voltage in liquid nitrogen($LN_2$) and liquid nitrogen pressure. In these test results, PD inception stress and AC, impulse breakdown strength increase as the pressure of the liquid nitrogen increases.

This paper describes the long duration withstand current characteristics of ZnO varistors. Two ZnO varistors were manufactured with general ceramic production methods and three abroad varistors were also prepared to be compared. During long duration withstand test, sample 1 was destroyed at 4th impulse current but the rest passed test. Before and After the test, the residual voltage variation of varistors passed was below 5%. According to the test results, it is thought that the manufacturing process such as insulating coating, sintering condition and soldering method should be improved.

This study aims to evaluate the properties and the performance of the newly designed disconnector for surge arrester. This disconnector was verified with the performance in long-duration current impulse test and high current impulse test. And time-current characteristic test was done at 20A, 200A and 800A(3points) for simulating the internal fault condition of the arrester. The results of this test was very good. Consequently, the newly designed disconnector was, evaluated that it is possible to be used for surge arrester in distribution line system.

본 논문에서는 인가 전극구조가 다른 두가지 형태의 아크성 스트리머 방전용 플라즈마 반응기를 설계 제작하였다. 제작된 반응기에 60 Hz상용전원과 펄스파워를 인가전원으로 사용하여 반응기 형태와 인가전원에 따른 수소발생 특성에 대하여 조사하였다. 또한 방전 전력에 따른 수소발생량을 비교 분석하였다. 수소 발생을 위한 효과적인 수표면 방전은 강한 전계 집중과 높은 에너지 밀도를 동반한 아크성 스트리머 방전 분위기 형성이 필요하다. 인가전원으로 상용전원을 이용한 경우보다 펄스파워를 사용한 경우와 강한 전계집중 증대를 위해 인가 전극이 석영관 내에 배치된 전극 구조에서 수소발생에 효과적이였다.

고밀도 유도결합 플라즈마 장치의 $O_2$ 방전에 대한 공간 평균 시뮬레이터를 제작하였다. 제작된 시뮬레이터는 $O_2$ 플라즈마 방전에서 발생되는 전자, 양이온, 음이온 및 중성종, 활성종들에 대해 공간 평균된 유체 방정식을 기반으로 하고 있으며, 고밀도 유도결합 플라즈마 장치에서 전자가열 모델은 anomalous skin effect 를 고려한 파워 흡수 모델을 적용하여 전자가 흡수하는 고주파 파워량을 결정하였다. 완성된 시뮬레이터에서 RF- 파워, gas-inlet, pumping-speed등의 조정 변수를 비롯한 여러 가지 장치 변수들의 변화에 대한 하전입자, 중성종, 활성종들의 밀도 변화 및 전자 온도 의존성을 계산하였다.

In order to improve energy efficiency in the dilute trichloroethylene removal using the nonthermal plasma process, the barrier discharge treatment combined with manganese dioxide was experimentally studied. Reaction kinetics in this process was studied on the basis of final byproducts distribution. Decomposition efficiency was improved to about 99% at the specific energy 40J/L with passing through manganese dioxide. C=C $\pi$ bond cleavage in TCE gave DCAC (single bond, C-C) through oxidation reaction during the barrier discharge plasma treatment. Those DCAC were broken easily in the subsequent catalytic reaction due to the weak bonding energy about 3 ~ 4 eV compared with the double bonding energy in TCE molecules. Oxidation byproducts of DCAC and TCAA from TCE decomposition are generated from the barrier discharge plasma treatment and catalytic surface chemical reaction, respectively. Complete oxidation of TCE into $CO_X$ is required to about 400J/L.

In this paper, we analyzed a metallurgical structure and arc properties of copper wire when the over-current flows on electric wire. From the results, The fusing current was related to the fusing time(current rising rate per second). In case of the shorter the fusing time, the fusing current was high, and the fusing time of ac type was larger than that of dc type. The copper wire was bent by the increase of current and heated, the beads were scattered around wire with a flash. We could observed the dendrite structure in 'molten wire at ac and dc current type. According as the current rising rate per second is short, the dendrite structure is distributed in surface of wire.

The distribution facilities, such as suspension insulator, line post insulator, lightning arrester, COS, used for long periods in the industrial pollution area were investigated. The electrical test and the material analyses were performed on the polluted and non-polluted facilities. The low frequency dry flashover voltage of polluted suspension was decreased about 8% in comparison with non-polluted one. The polluted materials turned out with the iron which came from the foundries. The polluted materials turned out with the iron which came from the foundries. This conductive materials decreased the leakage distance, resulting in reducing of electrical properties.

Recently, polymer insulators that are used for high voltage applications have some advantages such as light weight, small size, vandalism resistance, hydrophobicity and easy making process. During outdoor service of polymer insulators, the surface of the insulating material is frequently subjected to moisture and contamination that lead to dry band arcing. Their tracking resistance, erosion resistance, end sealing and shed design are very important because dry band arcing causes degradation of polymer surface. In this paper, the tracking property of polymer suspension insulator for power transmission is investigated with CEA tracking wheel test. The diagnosis of insulator sample in tracking test has been analyzed by leakage current, STRI Guide, SEM, FTIR and thermal image.

For the insulation design of a HTS cable, the withstand voltage of three kinds were proposed. One of them is the AC design withstand voltage, another is the impulse design withstand voltage, and the other is the partial discharge inception stress. However, the multi-layered effect was not considered on insulation design of a HTS cable at existent design process. Therefore in this paper, the electrical breakdown characteristics by multi-layered effect of LPP insulation paper were investigated. Based on these results, the insulation thickness of 22.9 kV class HTS cable was designed, and compared with existent design process.

In case of aged porcelain, the failure in basic performance tests happened in cool-heat tests. Based on this characteristic, we studied the method predicting failure phenomena through more severe accelerated cool-heat ageing and accelerating thermal mechanical performance tests. Test results indicated that the thermal stress by temperature gradient was more severe parameter than thermal stress by quenching cycles within a category of standard or accelerating methods. And there is no the deterioration of statistic strength, but the deterioration of strength according to accelerating tests is serious.

AC induction motor equipped in electric train is driven by VVVF inverter which produces switching pulse like impuse. Impulse voltage is more dangerous than continuous alternative voltage for the insulating performance of AC induction motor. This paper has investigated PD characteristics caused by impuse voltage for stator coils inserted in AC induction motor.

Until now variable pattern classification methods have been introduced. So, variable methods in PD source classification were applied. NN(neural network) the most used scheme as a PD(partial discharge) source classification. But in recent year another method were developed. These methods is present superior to NN in the field of image and signal process function of classification. In this paper, it is show classification result in PD source using three methods; that is, BP(back-propagation), ANFIS(adaptive neuro-fuzzy inference system), PCA-LDA(principle component analysis-linear discriminant analysis).

한빛 자기거울 장치는 고온 플리즈마 물성을 연구하기 위한 장치로서 플러즈마 밀도 형성을 위한 slot 형 안테나 고주파 가열 시스템이 중앙 진공용기에 설치되어 있다. 본 연구에서는 이러한 고주파 전송선로, 임피던스 정합 network. 장치 임피던스를 포함하는 한빛 장치의 고주파 가열 시스템에 대하여 기존에 정립된 고주파 가열 이론[1]을 기반으로 하여 이론적인 해석만으로 구성된 회로모델을 완성하였다. 임피던스 정합 소자 값들은 임피던스 정합 조건으로 결정함으로써 다양한 장치 및 플라즈마 변수들의 함수로 표현하여 그 의존성을 조사하였다.

In this paper, we introduced a LIF measurement method and summarized the theoretical side. When an altered wavelength of laser and electric power, lamp applied electric power, we measured the relative density of the metastable state in mercury after observing a laser induced fluorescence signal of 404.8nm and 546.2nm, and confirmed the horizontal distribution of plasma density in the discharge lamp. The results confirmed the resonance phenomenon regarding the energy level of atoms along a wavelength change, and also confirmed that the largest fluorescent signal in 436nm, and that the density of atoms in 546.2nm ($6^3S_1\rightarrow6^3P_2$) were larger than 404.8nm ($6^3S_1\rightarrow6^3P_1$). According to the increase of lamp applied electric power, plasma density increased, too. When increased with laser electric power, the L1F signal reached a saturation state in more than 2.6mJ. When partial plasma density distribution along a horizontal axis was measured using the laser induced fluorescence method, the density decreased by recombination away from the center.

Discharge of the flat lamp lighting source research are requested very much. For improving brightness. life time. efficiency of flat lamp and plasma diagnosis of the flat lamp lighting source to understand property of lighting source is very important. When a distance of discharge electrode is 5.5mm and width is 16.5mm. we measured electron temperature and electron density measured with single Langmuir probe in flat lamp. We tested the discharge from 100 Torr to 300 Torr pressure. The pulse type was rectangular with frequency 20kHz and duty ratio was 20%. In result. electron temperature decreases and electron density increased as increase the gas pressure and electron temperature decreases and electron density increase as increase the voltage.

To found out the degradation characteristic of transformer insulation, insulation material was depisited into transformer oil and heated. Due to the thermal stress which added to insulation, the density of carbon dioxide which included in transformer oil was mesured by using the gas density detection equipment of gas sensor and air circulation method. As a result, it didn't match with the transformer supervision standard. But it was found that as thermal stress increased, the density of carbon dioxide propertionally increased.

In this paper, the oxidization characteristics were analyzed according to the shapes of Residual Current Protective Device(RCD) contacts. RCD is an electrical safety device specially designed to immediately switch the electricity off when electric leakage is detected at a level harmful to a person using electrical equipment. The shapes of RCD contacts are a little bit different according to the models. When RCD is turned on, stationary and moving contact do not fit together. So, it can cause the increase of contact resistance. To discover the deterioration characteristics of RCD contacts by switching repetition, the contacts were analyzed by stereo microscope, Scanning Electron Microscope(SEM) and Energy Dispersive X-ray Spectrometer(EDS).

Energy distribution function for electrons in SF6-Ar mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6$-Ar mixtures were measured by TOF method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

In order to apply the discharge plasma processing. to industrial areas, the control of the chemical reaction mechanism is necessary. The hybrid plasma reactor was designed for the effective treatment of wastewater and hazardous volatile organic substances. This plasma reactor was similar to the barrier discharge, and surface discharge on the dielectric surface was propagated to the water surface strongly for the heterogeneous chemical reaction at the interface between the working gas and the water surface. The discharge emission in this discharge reactor was mainly $N_2$ second positive band in the case of $N_2$ or air gas atmosphere, and intensities from OH radicals in Ar gas atmosphere were stronger than in $N_2$ or air gas atmosphere. From this result, it is necessary to apply Ar gas for the effective generation of OH radicals in this plasma reactor.

In this work, a novel hybrid FL sensor consisting of two Rogowski coils has been designed for the installation on the ground wire of the transmission tower. The operation range of these coils is as follows: 30kA for the fault current comingfrom the ground fault or short-circuit and for the lightning current up to 150kA over 500kHz. Thus, two important functions could be provided: one is to detect the fault current and the other one is to find the fault location between towers or the location of induced lightning stroke. The on-site investigation at 800kV test yard has been under progress for its on-site application.

BSCCO thin films were fabricated by an ion beam sputtering method with an ultra-low growth rate, and sticking coefficients of the respective elements are evaluated. The sticking coefficient of Bi element in BSCCO film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. In contrast, Sr and Ca, displayed no such remarkable temperature dependence. This behavior of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi2O3. It is considered that the liquid phase of the bismuth oxide plays an important role in the Bi 2212 phase formation in the co-deposition process.

Ozone is useful oxidizing gas for the fabrication of BSCCO thin films. In order to obtain high quality oxide BSCCO thin films, higher ozone concentration is necessary. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

BSCCO:2212-2223 thin films were fabricated by using the ion beam sputter with a evaporation method at various substrate temperatures, $T_{sub}$, and ozone gas pressures, $pO_3$. The correlation diagrams of the BSCCO phases with Tsub and $pO_3$ are established in the 2212 and 2223 compositional films. In spite of 2212 compositional sputtering, Bi2201 and Bi2223 as well as Bi2212 phases come out as stable phases depending on Tsub and $pO_3$. From these results, the thermodynamic evaluation of ${\Delta}H$ and ${\Delta}S$, which are related with Gibbs' free energy change for single Bi2212 or Bi2223 phase, was performed.

PTC Thermistors specimens were fabricated by added $MnO_2$ as donors, and $Nb_2O_5$ as acceptors and sintered $1250^{\circ}C$/2hrs. Average grain size decreased with increased in added $MnO_2$, and increased with added in $Nb_2O_5$. But, appeared liquid phase as $Bi_2O_3$ and $TiO_2$, affect to grain growth. XRD result, peak strength waslowed then crystallization not well, but, secondary phase were not showed all specimens. All specimens resistance were so high, about $40M\Omega$ over, couldn't measured to those resistance and doesn't appear PTCR effect.

Lithium-ion batteries have used the layered $LiCoO_2$ materials as cathodes, but Co is relatively toxic and expensive. In this regard, the spinel $LiMn_2O_4$ has become appealing because manganese is inexpensive and environmentally benign. In general, cathodes for lithium ion batteries include carbon as a conductive agent that provides electron transfer between the active material and the current collector. In this work, we selected Acetylene Black and Super P Black as conducting agents, and then carried out comparative investigation for the performances of the cells using different conducting agents with different particle size. As a consequence, Li/$LiMn_2O_4$ cells with Super P Black show better electrochemical performances than those with Acetylene Black.

This research which it sees adds $LiMn_2O_4$ in the activated carbon electrode the test against the effect which it follows is. Test cells, which were $LiMn_2O_4$fabricated with active mass composite consisted of (100-X)% of MSP-20 and (X)% of $LiMn_2O_4$ (X=20,40,60,80,100), exhibits the better specific capacitance than those of the cells fabricated with single active mass that is MSP-20. The enhanced properties of composite active mass could be caused by capability of $LiMn_2O_4$ powders. But the resistance was increase by proportionate in $LiMn_2O_4$ addition and when mixture ratio of the activated carbon and the $LiMn_2O_4$ being similar, to be low rather to the after where had become the maximum it came.

Recently, the performance of portable electric equipment can often improved by a Li-ion battery assisted by a supercapacitor. A supercapacitor can provide high power density as well as a low resistance in the hybrid system. In this study, we have prepared, as the pluse power souce, a commercially supplied Li-ion battery with a capacity of 700mAh and AC resistivity of $60m\Omega$ at 1kHz and nonaqeous asymmetric hybrid capacitor composed of an activated carbon cathode and MCMB anode, and have examined the electrochemical characteristics of hybrid capacitor and the pulse performances of parallel connected battery/hybrid capacitor source. The nonaqueous asymmetric hybrid capacitor, the stacks of 10 pairs of the cathode, the porous separator and the anode electrode were housed in Al-laminated film cell. The hybrid capacitor, which was charged and discharged at a constant current at $0.25mA/cm^2$ between 3 and 4.3V, has exhibited the capacitance of 100F. And the equivalent series resistance was $32m\Omega$ at 1kHz. By combining a Li-ion battery and a hybrid capacitor, the pulse performance of battery can be improved 23% in run time under a pulse discharge of 7C-rate.

The measurement method of electrical conductivity of the metal use a generally DC technique. Traceability to national standards in many countries is achieved using DC measurement technique and recently it's interested in AC technique. As a results for AC technique, the properties of electrical conductivity of non-ferrous and ferrous metals is decreasing at low frequency level.

In the cold and temperate regions of Korea the icing and ice coats on 25 kV overhead contact wire during winter is a very serious problem. This generates shocks at the mechanical interface of the collecting strips of the pantograph and the contact wire and extra electrical resistance, which may affect quality of current collection at the contact wire / collecting strips of pantograph interface. De-icing operations should be performed just before train operation to avoid the formation of another ice layer. This paper presents temperature analysis of the de-icing system which could be applied to the overhead contact wire of railways.

A precise ratio transformer which is used to a ratio arm of a precise impedance measurement bridge at low frequencies was developed. The developed ratio transformer has the ratio taps of 1:1, 2:1, $\cdots$, to 10:1 in order to measure the primary impedance standards by substitution and special winding techniques for 10:1 ratio that is used frequently for impedance build up/down. The calibration results of the transformer has inphase and quadrature error of $0.073\times10^{-6}$ and $0.14\times10^{-6}$ respectively at 1.6 kHz.

Depth error correction effect for maladjusted stereo cameras with calibrated pixel distance parameter is presented. Intra and extra parameters should be obtain to determine the relation between image and world coordination through experiment. One difficulty is in camera alignment for parallel installation: placing two CCD arrays in a plane. If the pixel distance parameter which is one of intra parameter is calibrated with known points, such error can be compensated in some amount. Such error compensation effect with the calibrated pixel distance parameter is demonstrated with various experimental results.

In this paper, author describe the undoped and $Co^{2+}$(0.5mole%) doped $Cd_4SnSe_6$ single crystals were grown by the chemical transport reaction(CTR) method. The grown single crystals crystallize in the monoclinic structure of space group Cc and have the direct band gap structure. The energy gaps of them are 1.68 eV for $Cd_4SnSe_6$ and 1.50 eV for $Cd_4SnSe_6:Co^{2+}$ at 300K respectively.

Science and technology is the power of impelling the economic and social development. Promoting the international sci-tech communication and cooperation is one of the important ways of pulling the economic development of Northeast Asia area. Sci-tech communication and cooperation between the government and the folk are two wings of international sci-tech communication and cooperation. Both are supplemented mutually and indispensable. In order to promote the economic and social development of Northeast Asia area and further strength, some suggestions are put forward, i.e. fully exerting university the main roles in the sci-tech communication and cooperation of Northeast Asia area and fully exerting Liaoning province the important roles in the sci-tech communication and cooperation of Northeast Asia area.

Fuel cells is proved that potential energy is greater than the existing power generation. In this paper, we describe a principle of fuel cell which is used for next generation portable battery and brief characteristic of direct methanol fuel cells (DMFCs) that used for portable appliances by miniaturization of polymer electrolyte fuel cell. Lastly we describe about research investment for fuel cells.

재료의 상변태 현상을 규명하기 위한 목적으로 이용되는 전기저항 측정법은 "비열측정", "선팽창율 변화 측정"등의 주요 분석방법에 비해 상대적으로 우수한 정밀성과 편이성으로 많은 연구자들에 의해 이용되고 있다. 그러나 전기저항 측정법은 전기저항의 온도민감성, 크기효과(size effect) 등으로 인해 실험결과에 대한 폭넓은 응용과 해석에 제한을 받고 있다. 최근 전기저항 변화율을 미분한 "DVRC 측정법"을 통해 보다 정밀하게 상변태 현상을 규명하고자 하는 노력들이 진행 중에 있다. 본 연구에서는 Al-Mg합금을 대상으로 수행된 전기저항 측정결과와 DVRC측정결과를 비교 분석함으로서 미시적 상변태 해석을 위한 기초적 해석 자료를 도출하고자 하였다.

Carbon Nanotubes (CNT) on flexible indium tin oxide (ITO) PET films were prepared for dye-sensitized solar cell (DSSC). These CNTs were prepared by spray coating method for various amount of light transparency. Also, Pt counter electrode was prepared by electro deposition method. All $TiO_2$ electrodes were deposited on ITO-PET films by spray coating method. Micro structural images show that CNT counter electrodes prepared by spray-coating have more dense structure with increasing spraying time (0 to 60 seconds). DSSC consisting of $TiO_2$ electrode and CNT counter electrode was fabricated with various amount of light absorption. DSSC have higher light energy conversion efficiency with increasing the thickness of CNT counter electrode. CNT counter electrode is at least compatible to that of CNT counter electrode.

The main purpose of this study is to investigate the effect of gas pressure infiltration on microstructure. Continuous fiber reinforced Al matrix composite wire is produced by gas pressure infiltration process. With the increase of gas pressure, porosity and wettabillity was improved. No chemical reaction product was detected at the interface of $Al_2O_3$ and Al.

가공송전선의 수명은 가설 후 경과된 기간(약 36년)으로 정하는 것이 일반적이나 가설된 지역의 환경적 요인이나 전선의 재질상의 특성, 전력공급량 등에 의하여 열화상태가 다양하게 진행된다. 따라서 현재와 같이 모든 전선에 대하여 일정기간으로 정해진 교체 시기는 현실적이지 못하다. 실제로 전선의 단선사고는 경년과 같은 전선의 이력보다는 부식 환경에 노출된 전선의 취약성으로 인하여 초래되는 경우가 많다. 정확한 전선의 수명을 진단하기 위해서는 가공송전선이 노출되어 있는 환경 하에서 경년에 따른 기계적, 전기적 특성의 변화를 조사하여 복합적 인자들을 정량적으로 처리하는 것이 필수적이다.

Copper is widely used in electric wire, cable, conductor in electric devices. As the demand for electric power is increasing rapidly, electric power devices are getting amazingly bigger and complicated. The using of light-weight conductor can reduce the size and making cost of the electric devices. In high-frequency application, Electric current the current in a conductor tends to shift to the surface of the conductor, resulting in an uneven current distribution in the inner conductor. In the extreme case the current may essentially concentrate in the "skin" of the inner conductor as a surface current. In high frequency application, therefore, inner area of copper conductor may replace with aluminum conductor, which reduces the weight of conductor. This paper describes the manufacture and evaluation of composite conductors made of copper and aluminum.

Toward the practical applications, on operation of conduction-cooled HTS SMES at temperatures well below 77 K should be investigated, in order to take advantage of a greater critical current density of HTS and considerably reduce the size and weight of the system. Recently, research and development concerning application of the conduction-cooled HTS SMES that is easily movement are actively progressing in Korea. Electrical insulation under cryogenic temperature is a key and an important element in the application of this apparatus. Using multi wrapped copper by polyimide film for HIS SMES, the breakdown characteristics of models for turn-to-turn, that is surface contact model, were investigated under ac and impulse voltage at 77 K. A material that is Polyimide film (Kapton) 0.025 mm thickness is used for multi wrapping of the electrode. Statistical analysis of the results using Weibull distribution to examine the wrapping number effects on breakdown voltage under ac and impulse voltage in $LN_2$ was carried.

In recent years, the rapid growth of portable electronic device market requires higher density characteristics of batteries. The speed at which portability and mobility is advancing hinges much on the battery. What is important is this energy source that engineers design handled devices around the battery, rather than the other way around. Much improvement has been made in reducing the power consumption of portable devices. Currently, the most popular secondary battery is Li-ion battery. Li-ion has won the limelight and become the most prominent battery. This paper reviews the prospect and future of the Li-ion battery.

ACSR(Aluminum Conductor Steel Reinforced)가공송전선은 교류전류의 흐름에 의하여 코어 (Core)부에 자기장이 발생되어 전력손실을 발생시킨다. 이로 인한 전력손실을 최소화 하는 방법으로는 코어의 재질을 자성체인 고탄소강선 대신에 비자성강으로 교체하는 방법이 있다. 본 연구에서는 기존의 고탄소강선 대신에 고강도 비자성강을 코어(Core)에 적용한 ACNR(Aluminum Conductor Nonmagnetic Steel Reinforced) 가공송전선을 개발하였다. ACNR 가공송전선의 전기적 특성시험에서 약 9%정도의 손실저감효과를 나타내었다.

대부분의 고압송전선은 알루미늄도체와 강심코어로 구성된 ACSR(Aluminum Conductor Steel Reinforced) 계통으로 건설되었다. 강심코어는 고탄소강으로 전선의 하중을 담당하며 알루미늄은 도체로 사용되고 있다. ACSR $410mm^2$ 가공송전의 온도와 전류량, 외기조건(온도, 풍속, 풍향각)과의 관계를 규명하는 것은 송전용량과 승전효율을 증진하는데 필수적이다. 전선온도는 전류량에 따라 직선적으로 변화하며 풍속 0.5 m/s와 태양열의 흡수가 없다고 가정하면 "전선온도($^{\circ}C$) = -0.3143 + 0.077$\times$전류랑(A)"의 관계를 가진다. 전류랑 852A에서 풍속에 따라 전선의 표면부와 강심부의 망사온도차는 감소하였다. 풍속 20m/s에서의 방사온도차는 약 $1.4^{\circ}C$로 나타났다.

Transparent conducting glasses exhibit high ohmic losses that are apparent in the case of large size Dye Sensitized Solar Cells (DSSCs). In this study, we investigated the impact of current collectors over the efficiency of DSSCs. The Silver current collectors were prepared on both counter electrode and working electrode surface by screen printing method. For long term stability in electrolyte environment and also to avoid the charge recombination, current collectors are protected by sodium silicate overcoat layer. These current collectors were characterized for their microstructure parameters. Also current collector's stability in electrolyte environment has been investigated.

최근에 미국이나 러시아를 중심으로 가공승전선의 승전효율을 증대시키고자 하는 연구가 활발히 이루어지고 있으며 어느 정도 성과를 거두고 있다. ACSR가공송전선에서 교류전류의 흐름에 의하여 코어 (Core)에 자기장이 발생되어 투자율이 증가되고 이로 인하여 알루미늄층에서 전류밀도의 재 분포, skin effect 등으로 인하여 전력손실이 발생된다. 본 연구에서는 기존의 ACSR가공송전선의 코어 (Core)인 고탄소강선 대신에 비자성이면서 고강도인 새로운 강선을 코어재료로 채택한 ACNR(Aluminum Conductor Nonmagnetic Steel Reinforced)가공송전선을 개발하여 전력손실을 감소시켰다.

AAO templates were fabricated using a two-step anodization process with pretreatment such as electro polishing and annealing. To reduce process time and get well-aligned pore array, rapid thermal processor by an halogen lamp was employed in vacuum state at $500^{\circ}C$ for various time. The pore array of AAO template annealed at $500^{\circ}C$ for 2 h is comparable to a template annealed in conventional furnace at $500^{\circ}C$ for 30 h. The well-fabricated AAO template has the mean pore diameter of 70 nm, the barrierlayer thickness of 25 nm, and the pore depth of $9{\mu}m$. And the pore density can be as high as $2.0\times10^{10}cm^{-2}$.

HTS Transformer developing is developing a power distribution and transmission class HTS transformer that is one of the 21st century superconducting frontier projects. Therefore, we prepared the model, that is Z continuous winding from Kapton insulated Cu tape for a small simulated the HTS transformer. For the development of electrical insulation design of a HTS transformer with Z continuous winding, we have been discussed insulation composition and investigated breakdown characteristics such as breakdown of liquid $N_2(LN_2)$, polymer and surface flashover on FRP and breakdown-surface combination in $LN_2$. Also we have been designed and manufactured a bobbin that has spiral slot for the Z continuous winding. The Z continuous winding mini-model from Kapton film insulated Cu tape for simulated 22.9kV class HTS transformer has been constructed using 0.1 % breakdown strength obtained by Weibull distribution. The widing model was measured their insulation characteristics such as ac (50kV, 1min) and impulse (154kV, $1.2\times50{\mu}s$ full wave, 3 times) withstand test and its excellent performance was confirmed.

New methods of nano-sized material and composite coating preparations have been considered on the base of mathematical model of abrasion-reaction interaction of milling and grinding bodies in planetary centrifugal mill. The essence of the method is the abrasive and oxidative wear of the milling bodies and amorphous (better inert) additives. Interactions between them has been supplied the necessary impulse of pressure and temperature on the impact-frictional contacts and promoted chemical processes. The offered method can find application for such processing as sintering and geological minerals opening.

The increasing hydroxyl ($OH^-$) groups diffused into the TEOS and then weakened reactants such as H-C-O-Si bonds on the surface of TEOS film were actively generated with the increase of slurry temperature. These soft reactants on the surface of TEOS film could be removed easily by mechanical parts of CMP.

The development of CMP slurry chemistry for Ni that provides good CMP performance is the key for nickel based MEMS device fabrication. In this study, CMP of nickel was performed using different slurry versus oxidizer ratios arid different oxidizers also alumina particles as an abrasive.

반도체는 고집적화, 고속도화, 저전력화를 목적으로 발전하고 있다. 이를 위하여 design rule의 감소, 새로운 물질과 프로세스의 적용 등 많은 연구가 이루어지고 있으며, RC delay time을 줄이기 위한 Cu 와 저유전율 재료의 적용이 그 대표적인 예라 할 수 있다. Cu 배선은 기존의 Al 배선에 비하여 높은 전자이동 (electro-migration)과 응력 이동 (stress-migration) 저항을 가짐으로써 전기적인 성능 (electrical performance) 에서 이점을 가지고 있다. 반도체에서의 Cu 배선 구조는 평탄화된 표면 및 배선들 사이에서의 좋은 전기적인 절연성을 가져야 하며, 이는 디싱(dishing)과 에로젼(erosion)의 중요한 인자가 된다. 기존의 평탄화 공정인 Cu CMP(Chemical Mechanical Polishing)에 있어서 이러한 디싱, 에로전과 같은 결함은 선결되어져야 할 문제로 인식되고 있다. 따라서 본 연구에서는 이러한 결합들을 감소시키기 위한 새로운 평탄화 방법으로 Cu gap-filling 을 하는 동시에 평탄화된 표면을 이루는 ECMD(Electro-Chemical Mechanical Deposition) 공정의 전기적 기계적 특성을 파악하였다.

Chemical mechanical polishing (CMP) has emerged as the planarization technique of choice in integrated circuit manufacturing. Especially, polishing pad is considered as one of the most important consumables because of its properties. Generally, conventional polishing pad has irregular pores and asperities. If conditioning process is except from whole polishing process, smoothing of asperities and pore glazing occur on the surface of the pad, so repeatability of polishing performances cannot be expected. In this paper, CMP pad with microstructure was made using micro-molding technology and repeatability of ILD(interlayer dielectric) CMP performances and was evaluated.

Stick-slip friction is one of the material removal mechanisms in tribology. This stick-slip friction occurs when the static friction force is larger than the dynamic friction force, and make the friction curve fluctuated. In the friction force monitoring system for chemical mechanical polishing(CMP), the friction force also vibrates just as stick-slip friction. It seems that the stick-slip friction causes scratches on the surface of moving parts. In this paper, A study on the scratches which occur during copper CMP was conducted in a view of stick-slip friction.

In the future, plastic based system will play a crucial role in modem life, for examples, transparent display or disposable electronics and so on. In this paper, we introduced a new method to fabricate the metal line on the plastic substrate. Metal lines were fabricated by hot embossing and CMP process on PMMA (polymethylmethacrylate) substrates. A Si mold was made by wet etching process and a PMMA wafer was cut off from I mm thick PMMA sheet. A 100 nm thick Al was deposited on PMMA wafers. The Al deposited PMMA wafer and the Si mold carefully sandwiched which was directly imprinted by hot embossing. After imprinting process, a residual Al layer was removed by CMP process. Finally, we found the entire process may be very useful to fabricate the metal line on plastic substrates.

Flame retard of polymers was studied for prevention from burning by various additives stimulated the char formation during heating and thermal degradation of polymer materials. Forming char have high porosity, low thermal conductivity and act as thermal shield for heat transmission from the flame to the polymer and. oxygen towards the polymer. The results showed that various additives may regulate the processes of intumecsence. The efficient fire protective intumescent char was result of processes of melting, gas evolution, cross-linking, carbonization etc.