한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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- Pages.187-188
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- 2005
Si(111) 기판을 이용한 crack-free GaN 박막 성장과 PL특성
A Study of Growth and Properties of GaN films on Si(111) by MOCVD
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Kim, Deok-Kyu
(Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
- Jin, Hu-Jie (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
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Song, Min-Jong
(Kwangju Health College) ;
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Park, Choon-Bae
(Wonkwang Univ. School of Electrical Electronic and Information Engineering)
- 발행 : 2005.07.07
초록
The characteristics of GaN epitaxial layers grown on silicon (111) substrates by metalorganic vapor phase epitaxy have been investigated. The only control of AlN thickness was found to decrease the stress sufficiently for avoiding crack formation in an overgrown thick (