Plasma processing of semiconductor materials plays a dominant role in microelectronic technology. During last century, plasma have gone a way from laboratory phenomena to industrial applications due to intensive progress in both scientific and industrial trends. Improvement and development of new experience together with development of plasma theory and plasma diagnostics methods. A most parameters (pressure, flow rate, power density) and various levels of plasma system (energy distribution, volume gas chemistry, transport, heterogeneous effects) to understand the whole process mechanism. It will allow us to choose a correct ways for processes optimization.

In this study, Au thin films were etched with a $Cl_2/Ar$ gas combination in an in an inductively coupled plasma. The etch properties were measured for different gas mixing ratios of $Cl_2/(Cl_2+Ar)$ while the other process conditions were fixed at rf power (700 W), dc bias voltage (150 V), and chamber pressure (15 mTorr). The highest etch rate of the Au thin film was 3500 $\AA/min$ and the selectivity of Au to $SiO_2$ was 4.38 at a $Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in $Cl_2/Ar$ plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions. In addition, Optical emission spectroscopy (OES) were investigated to analyze radical density of Cl and Ar in plasma. The profile of etched Au investigated with scanning electron microscopy (SEM).

In this paper, we fabricated a electro-chemical discharge machine for drilling microscopic glass hole. In this research, we used a glass plate and NaOH solution. From the experimental result, we knew that the change of voltage wave was caused by drilling microscopic hole of glass using electro-chemical discharge method. So, we can give a function of the power auto stop to electro-chemical discharge machine with the change of voltage wave.

(Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

In this paper, the electrochemical behavior of Viologen self assembly monolayer has been investigated with QCM, which has been known as nano-gram order mass detector. The self assemvly process of Viologen was monitored using resonant frequency $({\Delta}F)$ and resonant resistance(R). QCM measurements indicated a mass adsorption for Viologen assembling on the gold sufrace with a frequency change about 135[Hz] and calculated its surface coverage($\Gamma$) to be $3.5273{\times}10^{-9}[mol/cm^{2}]$. Also reversible redox process was observed and analyzed with ionic interaction at the Viologen/solution interface using ${\Delta}F$.

In this paper, we discuss the electrical properties of self-assembled (2'-amino-4,4-di(ethynylphenyl)-5'-nitro-l-(thioacetyl)benzene), which has been well known as a conducting molecule having possible application to molecular level NDR device. The phenomenon of negative differential resistance (NDR) is characterized by decreasing current through a junction at increasing voltage. also fabrication of MIM-type molecular electronic and the Molecular Level Using Scanning Tunneling Microscopy

Photoconductor for direct detection flat-panel imager present a great materials challenge, since their requirements include high X -ray absorption, ionization and charge collection, low leakage current and large area deposition. Selenium is practical material. But it needs high thickness and high voltage in selenium for high ionization rate. We report comparative studies of detector sensitivity. One is an a-Se with $70{\mu}m$ thickness on glass. The other has hybrid layer of depositting ZnS phosphor with $100{\mu}m$ on a-Se. The leakage current of hybrid is similar to it of a-Se, but photocurrent is lager than a-Se. Both of them have high spatial resolution, but hybrid has higher sensitivity than a-Se at comparable bias voltage.

In this paper, the electric properties of amophous selenium multilayer samples has been investigated. In order to develop the hybrid flat-panel digital· X-ray image detector, we measured and analyzed their performance parameters such as the X -ray sensitivity and dark-current for a amophous selenium multilayers X-ray detector with a phosphor layer, The hybrid digital X-ray image detector can be constructed by integrating a phosphor layer (or a scintillative layer) that convert X-ray to a light on a-Se photoconduction mulilayers that convert a light to electrical signal. As results, the dielectric materials such as parylene between the phosphor layer and the top electrode may reduce the dark-current of the samples. Amorphous selenium multilayers having dielectric layer(parylene) has characteristics of low dark-current, high X-ray sensitivity. So we can acquired a enhanced signal to noise ratio. In this paper offer the method can reduce the dark-current in the hybrid X-ray detector.

In this paper, for digital x-ray conversion receptor development studied by hybrid technology of based on CdZnTe. For this study, First searched fabricate method of CdZnTe x-ray receptor. Second, search the phosphor material & fabricate method for scintillator layer. Fabricated sample is analyzed with physical & electric measurement. This result is showed good SNR ratio hybrid thechnology with direct method & indirect method. In this paper offer the method can reduce the dark-current in the hybrid X-ray detector.

There is a renewed interest in the application of photoconductors especially Cd(Zn)Te to x-ray imaging. In this paper, We investigate effects on x-ray detection characteristic of Zn dopped CdTe detector. Cd(Zn)Te film was fabricated by vacuum thermal evaporation method and then investigate physical analysis using EPMA and XRD. We investigated the leakage current and X-ray photosensitivity as applied voltage about fabricated Cd(Zn)Te film. Experimental results showed that the increase of Zn dopped concentration in $Cd_{1-x}Zn_{x}Te$ detector reduced a leakage current and improved a signal to noise ratio significantly.

We have investgated the photoisomerization using light irradiation 8A5H-phospholipid( L-$\alpha$-dimyristoylphosphatidylcholine[DMPC], L-$\alpha$-dilauroylphosphatidylcholine[DLPC]mixture LB film accumulated by monolayer on an ITO. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $NaClO_{4}$ solution at a variable concentration and variable number layers LB film. The scan rate was 100mV/s.

The displacemant current measuring system used for detecting the dynamic behavior of monolayers at the air-water interface is described. It basically consists of a film balance, a pair of electrodes connected to each other through a sensitive ammeter. Here, one electrode is suspended in air and the other electrode is placed in the water. With Maxwell-displacement-current-measuring method, the phase transitons of $Poly-{\gamma}-benzyl_{L}$ -glutamate (PBLG) and $Poly-{\gamma}-benzyl_{D}$-glutamate(PBDG) on a water surface were detected. Measured surface pressure, displacement current and dipole moment of monolayers of PBLG and PBDG on the water surface. Also, we measured that compression velocity (30, 40, 50[mm/min]) when the sample spread volume was about 370[ul]-400[ul] and displacement current that occur when differed temperature. From the result, it is known that current is generated in the range of high surface pressures as compression velocity become faster and increase of temperature.

Recently, due to its better photosensitivity in X-ray, the amorphous selenium based photoreceptor is used on digital direct method conversion material. Compared to other photoconductive material, amorphous selenium has good X-ray response characteristic and low leakage current. It has many parameters of detecting X-ray response on selenium. Among of them, it is well known that manufacture of a-Se is the most basic element. In this paper, we fabricated two types of amorphous selenium sample which had time variable. The one was fabricated continuous deposition sample and the other was step by step sample. Thickness of sample was $300{\mu}m$ and top electrode was evaporated gold. We investigated the leakage current and photo current of them and analysed their electrical characteristics. For analyzing morphology of samples, SEM and surface was pictured. We found that step by step deposition method could be applied for novel fabricating amorphous selenium film.

Ultra-fine particles of $SnO_{2}$ was synthersized by the sol-gel powder processing using tin(II) chloride dihydrate$(SnCl_{2}{\cdot}2H_{2}O)$ and ethanol$(C_{2}H_{5}OH)$ as raw materials. Gel powders can be obtained by drying of sol at $120^{\circ}C$ after aging 72hrs and 168hrs. The amount of $SnO_{2}$ phase was increased with temperature because of the evaporation of volatile components, and the creation of $SnO_{2}$ phase was almost done by the heat treatment at $700^{\circ}C/30min$ The grain sizes after firing are about 20-30nm, and it showed the narrow distribution of grain size. The specimens to measure electrical properties were fabricated by the thick film screen printing technique on the alumina substrates. The conductance of $SnO_{2}$ was increased with temperature up to $380^{\circ}C$ by the typical conduction mechanism of semiconducting ceramics. There was a region of constant conductance between about $200^{\circ}C$ and $380^{\circ}C$ due to the increment of electron concentration with temperature and the annihilation of conduction carriers by the absorption and electron trapped-ionization of oxygen on the surface of $SnO_{2}$, It was finally showed the intrinsic behaviors above $450^{\circ}C$. The sensing properties of response time, recovery, and sensitivity of CO were improved with aging time.

Transparent conducting aluminum-doped Zinc oxide films (ZnO:Al) were prepared by rf magnetron sputtering on glass (Coming 1737) substrate as a variation of the deposition condition. After deposition, the smooth ZnO:Al films were etched in diluted HCl (0.5%) to examine the electrical and surface morphology properties as a variation of the time. The most important deposition condition of surface-textured ZnO films by chemical etching is the processing pressure and the substrate temperature. In low pressures (0.9mTorr) and high substrate temperatures $({\leq}300^{\circ}C)$, the surface morphology of films exhibits a more dense and compact film structure with effective light-trapping to apply the silicon thin film solar cells.

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

Thin films of vanadium oxide($VO_{x}$) have been deposited by r.f. magnetron sputtering from $V_{2}O_{5}$ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Crystal structure, chemical composition, molecular structure and optical properties of films sputter-deposited under different oxygen gas pressures and in-situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through XRD. RBS, FTlR and optical absorption measurements. The films as-deposited are amorphous and those annealed for time longer than 4h are polycrystalline. $V_{2}O_{5}$ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric $V_{2}O_{5}$. When annealed at $400^{\circ}C$, the as-deposited films are reduced to a lower oxide. It is observed that the oxygen atoms located on the V-O plane of $V_{2}O_{5}$ layer participate more readily in the oxidation and reduction process. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly between 400 and 550nm.

Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using $O_2$+10% $CF_4$ plasma in an inductively coupled plasma(ICP) etching system. The etch rate of Ru thin films was examined as function of rf power, DC bias applied to the substrate. The enhanced etch rate can be obtained not only with increasing rf power and DC bias voltage, but also with small addition $CF_4$ gas. The selectivity of $SiO_2$ over Ru are 1.3. Radical densities of oxygen and fluorine in $CF_4/O_2$ plasma have been investigated by optical emission spectroscopy(OES). The etching profiles of Ru films with an photoresist pattern were measured by a field emission scanning electron microscope (FE-SEM). The additive gas increases the concentration of oxygen radicals, therefore increases the etch rate of the Ru thin films and enhances the etch slope. In $O_2$+10% $CF_4$ plasma, the etch rate of Ru thin films increases up to 10% $CF_4$ but decreases with increasing $CF_4$ mixing ratio.

Ferroelectric thin film is a very attractive material for the tunable microwave device applications such as electronically tunable mixers, delay lines, filters and phase shifters. Thin films of $Pb_{x}Sr_{1-x}TiO3(PST)$ were fabricated onto Pt/Ti/SiO2/Si substrate by the sol-gel method. We have investigated the structural and dielectric properties of PST(50/50) thin films for tunable microwave device applications. The PST thin films show typical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films are strongly dependent on annealing temperature. The dielectric constants, loss and tunability of the PST (50/50) thin films were 404, 0.023 and 51.73 %, respectively.

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Al and Au/Poly-${\gamma}$ Benzyl $_D$-Glutamate/Au; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

In the surface pressure-area isotherms of mixed monolayers, mixtures containing as much as 30 mol% of AA form stable condensed monolayer while the monolayer without AA is in the expanded state because PVK take on 3D collapsed. All of the mixed monolayers with 0, 10, 20 and 30 mol% of AA could be readily transferred onto ITO substrate at 16, 17, 24 and 26 mN/m, respectively. The monolayer containing 30 mol% of AA, however, showed a roughness value of 28A and became homogeneous decreasing with the phase separation. We fabricated organic EL device of ITO/CuPc/MEL/BBOT/iLiF/Al using mixed monolayer of 13, 19 and 25 layer deposited by LB method as a emitting layer. In the voltage-current characteristics of EL device, current density was much smaller than that of the spin-coated devices. It may due to the large contact resistance existed at the interface of LB layer/organic layer inhibit carrier injection to the emitting layer. EL spectra of device showed peaks at 450. 470, 505, 555 and 650 nm and the white light emission indicate the CIE coordinate x=0.306, y=0.353.

Phase transitions of the $Sm_{2}(MoO_{4})_{3}$ single crystal were studied through thermal analysis, x-ray methods and SEM/EDS. $Sm_{2}(MoO_{4})_{3}$ undergoes the ferroelastic and ferroelectric phase transition at $198^{\circ}C$. With increasing temperature, the second phase transition occurs at $928^{\circ}C$. From TG analysis, the mass loss of $Sm_{2}(MoO_{4})_{3}$ exhibits an anomalous behavior at about $650^{\circ}C$ and the curves increased monotonically to $1132^{\circ}C$. SEM and EDS show that the escape of ${MoO_{4}^{2-}$ tetrahedra from the lattice of $Sm_{2}(MoO_{4})_{3}$ increase above $928^{\circ}C$, so $Sm_{2}(MoO_{4})_{3}$ has a very rough surface and internal cracks.

We investigated domains and conoscope under the polarizing microscope and the index of refraction on the c-plate GMO which has the ferroelectric and ferroelastic phase at room temperature. To observed the change of refractive index in connection with domain, we developed an apparatus to obtain the refractive index by measuring the Brewster's angle. The resolution of the minimum rotation angle of this apparatus is $0.001^{\circ}$. To obtain the refractive index map on the sample, the moving distance of XY stage loaded sample holder is 60 mm and the minimum moving distance is 0.002 mm. Also, To obtain the indicatrix for single crystal, vertical turntable with sample holder and XY stage was loading on horizontal turntable. The minimum resolution angle of this vertical turntable is $0.001^{\circ}$. We measured the refractive index of transparent materials such as ferroelectrics. In the case of $Gd_{2}(MoO_{4})_{3}$, the Brewster angle is $62.11^{\circ}$ and then, the refractive index is 1.8895 by using He-Ne Laser. Also the refractive distribution of c-plate GMO was obtained with $400{\mu}m{\times}120{\mu}m$.

The applicability of models based on fractal morphology to characterize $(Ba\;Sr)TiO_{3}$ thin film surfaces was investigated. The fractal morphology of coated barium strontium titan oxide thin film surfaces was described using fractal dimension from scanning electro microscopy image. The $(Ba\;Sr)TiO_{3}$ coating were deposited on silicon wafers using $(Ba\;Sr)TiO_{3}$ solution and spin coater. BST solution was composited by mol ratio, and then spin-coated from 3 times to 5 times coating on $Pt/SiO_{2}/Si$ substrate. Qualitative thin film analysis was performed with scanning electro microscopy (SEM), and surfaces parameters such as average grain diameter, roughness exponent and fractal dimension were determined.

The optical memory devices of BST thin films to composite $(Ba_{0.7}\;Sr_{0.3})TiO_{3}$ using sol-gel method were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_{2}/Si$ substrate. The structural properties of optical memory devices to be ferroelectric was investigated by fractal analysis and 3-dimension image processing. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$ and $3800[\AA]$. BST thin films exhibited the most pronounced grain growth. The surface morphology image was roughness with coating numbers. The thin films increasing with coating numbers shows a more textured and complex configuration.

A new lithium niobate optical modulator with a polymer buffer layer on Ni in-diffused optical waveguide is proposed for the fist time, successfully fabricated and examined at a wavelength of 1.3 mm. By determining the diffusion parameters of Ni in-diffused waveguide to achieve more desirable mode size which is well matched to the mode in the fiber, the detailed results on the achievement of high optical throughput are reported. In addition, the usefulness of polymer buffer layer which can be applicable to a buffer layer in Ni in-diffused waveguide devices is demonstrated. Several sets of channel waveguides fabricated on Z-cut lithium niobate by Ni in-diffusion were obtained and on which coplanar traveling-wave type electrodes with a polymer-employed buffer layer were developed by a conventional fabrication method for characterizing of electro-optical performances of the proposed device. The experimental results show that the measured half-wave voltage is of ~10 V and the total measured fiber-to-fiber insertion loss is of ~6.4 dB for a 40 mm long at a wavelength of =1.3 mm, respectively. From the experimental results, it is confirmed that the polymer-employed buffer layer in LiNbO3 optical modulator can be a substitute material instead of silicon oxide layer which is usually processed at a high temperature of over $300^{\circ}C$. Moreover, the fabrication tolerances by using polymer materials in LiNbO3 optical modulators are much less strict in comparison to the case of dielectric buffer layer.

A new modular Lateral Information Propagation Networks(LIPN) has been designed. The LIPN has shown to be useful for reconstruction of information[3]. The problem is the fact that only the small number of nodes can be implemented in a IC chip with the circuit VLSI technology. The proposed modular architecture is propagated the neural network through inter module connections. For such inter module connections, the host (computer or logic) mediates the exchange of information among modules. Also border nodes in each module have capacitors for temporarily retaining the information from outer modules. The LIPN with $4{\times}4$ modules has been designed and simulation of interpolation with the designed LIPN has been done.

A CMOS voltage regulation circuit for use at low-voltage is proposed. Circuits for a positive and for a negative current regulation are presented and are designed with commercial CMOS technology. The voltage regulation that is stable over ambient temperature variations is an important component of most data acquisition systems. These results are verified by the H-SPICE simulation $0.8{\mu}m$ parameter. As the result, the temperature dependency of output voltage is $0.57mV/^{\circ}C$ and the power dissipation is 1.8 mV on 5V supply voltage.

In this paper, a new method for reducing harmonic in input AC line currents of converter presents, which is the multi-pulse converter circuit without the input transformer. This system can reduce the harmonic like conventional 12-pulse converter. Both the bridge circuits are controlled with the shifted firing angle and connected 2 tap inter-phase reactor. Using 2 tap changing on inter-phase reactor, the input current is controlled with the different two values in order to make the input current waveform 12 pulses.

In this paper, aging characteristics of outdoor silicone rubber insulator resulting from the acid rain have been investigated with regards to nitrate ion $({NO_{3}}^{-1})$. For this purpose, silicone rubber was aged by immersing into the nitric solutions with different level pH during 1500 hours and various tests (tracking, $tan{\delta}$, breakdown voltage, SEM, EDS, contact angle) were performed. It was observed that the degradation was increased to pH 2.5 slightly and at pH 1.5 highly. And thus, it could be expected that there is certain critical point between pH 1.5 and 2.5, which leads to throught degradation.

EM(ElectroMagnetic) pump is used for the purpose of transporting liquid sodium coolant with electrical conductivity in the LMR(Liquid Metal Reactor). In the present study, computer program for the pilot annular linear EM pump has been developed for the maximum flowrate with 200 l/min and maximum developing pressure with 3 bar. Firstly, Balance equation is induced by the equivalent circuit method which is commonly employed to analyze linear induction machines and the calculation of the hydraulic pressure drop. Then, design equation is converted to the computer program and optimum pump variables are determined by this code. The code is verified by the comparative analysis with the characteristic of the commercialized pump.

We present current limiting properties of 1.2kV/70A superconducting fault current limiter based on YBCO thin films. This is consisted of 6 wafers (3 parallel ${\times}$ 2 serial connection) with 4 inch-diameter YBCO thin film. The quench current Iq of the switching elements vary between 33.9 and 35.6 A. Within the difference of 0.5 A in the sum of quench current Iq in two stacks, the serial connection of the stacks showed the simultaneous quench behavior in applied power of 1.2 kV /70 A.