한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

LTCC를 이용한 Small Size Dual Band PAM의 구현

Implementation of Small Size Dual Band PAM using LTCC Substrates

  • Shin, Yong-Kil (Electronic Materials & Packaging Research Center, Korea Electronics Technology Institute) ;
  • Chung, Hyun-Chul (Electronic Materials & Packaging Research Center, Korea Electronics Technology Institute) ;
  • Lee, Joon-Geun (Electronic Materials & Packaging Research Center, Korea Electronics Technology Institute) ;
  • Kim, Dong-Su (Electronic Materials & Packaging Research Center, Korea Electronics Technology Institute) ;
  • Yoo, Jo-Shua (Electronic Materials & Packaging Research Center, Korea Electronics Technology Institute) ;
  • Yoo, Myong-Jae (Electronic Materials & Packaging Research Center, Korea Electronics Technology Institute) ;
  • Park, Seong-Dae (Electronic Materials & Packaging Research Center, Korea Electronics Technology Institute) ;
  • Lee, Woo-Sung (Electronic Materials & Packaging Research Center, Korea Electronics Technology Institute)
  • 발행 : 2005.07.07
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초록

Compact power amplifier modules (PAM) for WCDMA/KPCS and GSM/WCDMA dual-band applications based on multilayer low temperature co-fired ceramic (LTCC) substrates are presented in this paper. The proposed modules are composed of an InGaP/GaAs HBT PAs on top of the LTCC substrates and passive components such as RF chokes and capacitors which are embedded in the substrates. The overall size of the modules is less than 6mm $\times$ 6mm $\times$ 0.8mm. The measured result shows that the PAM delivers a power of 28 dBm with a power added efficiency (PAE) of more than 30 % at KPCS band. The adjacent-channel power ratio (ACPR) at 1.25-MHz and 2.25-MHz offset is -44dBc/30kHz and -60dBc/30kHz, respectively, at 28-dBm output power. Also, the PAM for WCDMA band exhibits an output power of 27 dBm and 32-dB gain at 1.95 GHz with a 3.4-V supply. The adjacent-channel leakage ratio (ACLR) at 5-MHz and 10-MHz offset is -37.5dBc/3.84MHz and -48dBc/3.84MHz, respectively. The measured result of the GSM PAM shows an output power of 33.4 dBm and a power gain of 30.4 dB at 900MHz with a 3.5V supply. The corresponding power added efficiency (PAE) is more than 52.6 %.

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