한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
- /
- Pages.101-102
- /
- 2005
4H-SiC RESURF LDMOSFET 소자의 전기적 특성분석
Analysis of the Electrical Characteristics of 4H-SiC LDMOSFET
-
Kim, Hyoung-Woo
(Korea Electrotechnology Research Institute) ;
-
Kim, Sang-Cheol
(Korea Electrotechnology Research Institute) ;
- Bahng, Wook (Korea Electrotechnology Research Institute) ;
-
Kim, Nam-Kyun
(Korea Electrotechnology Research Institute) ;
-
Seo, Kil-Soo
(Korea Electrotechnology Research Institute) ;
-
Kim, Enn-Dong
(Korea Electrotechnology Research Institute)
- 발행 : 2005.07.07
초록
SiC lateral power semiconductor device has high breakdown voltage and low on-state voltage drop due to the material characteristics. And, because the high breakdown voltage can be obtained, RESURF technique is mostly used in silicon power semiconductor devices. In this paper, we presents the electrical characteristics of the 4H-SiC RESURF LDMOSFET as a function of the epi-layer length, concentration and thickness. 240~780V of breakdown voltage can be obtained as a function of epi-layer length and thickness with same epi-layer concentration.