한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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- Pages.123-124
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- 2005
Cu Dual Damascene 배선 공정에서의 DCV 배선구조의 EM 특성 연구
Electromigration Characteristics Stduy DCV Interconnect Structures in Cu Dual-Damascene Process
- Lee, Hyun-Ki (Chung-Ang Univ.) ;
- Choi, Min-Ho (Chung-Ang Univ.) ;
- Kim, Nam-Hoon (Chosun Univ.) ;
- Kim, Sang-Yong (DongbuAnam Semiconductor Co.) ;
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Chang, Eui-Goo
(Chung-Ang Univ.)
- 발행 : 2005.07.07
초록
We investigated the effect of a Ta/TaN Cu diffusion barrier existence on the reliability and the electrical performance of Cu dual-damascene interconnects. A high EM performance in Cu dual-damascene structure was observed the BCV(barrier contact via) interconnect structure to remain Ta/TaN barrier layer. Via resistance was decreased DCV interconnect structure by bottomless process. This structure considers that DCV interconnect structure has lower activation energy and higher current density than BCV interconnect structure. The EM failures by BCV via structure were formed at via hole, but DCV via structure was formed EM fail at the D2 line. In order to improve the EM characteristic of DCV interconnect structure by bottomless process, after Ta/TaN diffusion barrier layer in via bottom is removed by Ar+ resputtering process, it is desirable that Ta thickness is thickly made by Ta flash process.