한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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- Pages.401-402
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- 2005
Peculiarities of amorphous and crystalline dielectric films prepared by sol-gel method
- Natalya, Korobova (Kazakh American University) ;
- Soh, Dea-Wha (Myongji University)
- 발행 : 2005.07.07
초록
The important parts of material science in the film preparation fields and sol-gel technology are presented. For the present work, a series of amorphous films was prepared in air by sol-gel method without using some alkoxide stabilizer, which reduces the reactivity of the metal alkoxides. The choice of precursors can affect the chemical-reaction kinetics, microstructures and properties of the product. In this report author compared the crystallization behavior of oxide functional films derived from the same precursors, stressing the influence of experiment conditions and where it was possible to obtain the uniform amorphous or crystalline dielectric films. A short analysis of sol-gel technology and thin film methods about development of dielectric materials has been given.
키워드