In this study, a new LTCC material using $ZnWO_4$-LiF system was attempted with respect to use as a capacitor layer in Front-End Module. Pure $ZnWO_4$ must be sintered above $1050^{\circ}C$ in order to obtain up to 98% of full density. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. LiF addition resulted in an liquid phase formation at $810^{\circ}C$ due to interaction between $ZnWO_4$ and LiF. Therefore $ZnWO_4$ with 0.5~1.5wt% LiF could be densified at $850^{\circ}C$. Addition of LiF slightly lowered the dielectric constant from 15.5 to 14.2~15. In the given LiF addition range, the sintering shrinkage increased with increasing LiF content. $Q{\times}fo$ value, however, decreased with increasing LiF content(or increasing densification). This is originated from the interaction between the liquid phase and $ZnWO_4$ and inhomogeneity of grain morphology.

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$(BSCT) (x=0.10, 0.15, 0.20) powders were prepared by the sol-gel method and BSCT thick films were fabricated by the screen-printing method. The structural properties as a faction of the composition ratio were studied. As a result of the differential thermal analysis (DTA), exothermic perk was observed at around $860^{\circ}C$ dne to the formation of the polycrystalline perovskite phase. The BSCT thick films sintered at $1350^{\circ}C$ for 2h showed the average grain size of $2{\sim}7{\mu}m$. The average thickness of BSCT thick films, obtained by 3 times of screen-printing, was approximately $85{\mu}m$.

$(SrBi_2Nb_2O_9)_{0.5}-(Bi_3TiNbO_9)_{0.5}$ ceramics were fabricated by the mixed-oxide method, and the structural and electrical properties with variation of ball-milling time were investigated. All SBN-BTN specimens showed the typical polycrystalline X-ray diffraction patterns without the presence of the second phase. The SBN-BTN specimen sintered at $1200^{\circ}C$ and ball-milled for 168h showed the average grain size of $16{\mu}m$. The dielectric constant and dielectric loss of the SBN-BTN specimen sintered at $1150^{\circ}C$ and ball-mill for 72h were 225, 0.4% at 1KHz, respectively.

We were fabricated of rf power resisotor on AlN substrates by thick film process. The characteristics of capacitance and microwave are measured by digital LCR meter and Network analyzer(HP8532D). The results are shown that capacitances are slight greater and microwave characteristics are good values.

The rheological characteristics of PNN-PZT ceramics with high electromechanical coupling factor and electricstrictive constant was investigated. Green sheets of piezoelectric PNN-PZT ceramics were made by tape-casting method with controlling the mixing ratio of a dispersant, an organic binder, and a plasticizer. When the dispersant content was 1 wt.%, the slurry showed the best rheological characteristics for tape casting. The amounts of the plasticizer and the binder was simultaneously varied in the ranges of 1.5~18 and 3~9 wt.%, respectively. When both the plasticizer and binder of 6 wt.% mixed in the solution, respectiveley, the highest green density of the sheet was obtained without macrodefects. Multilyered structures of PNN-PZT/Ag-Pd were successfully fabricated using the optimized tape casting condition. The polarization behavior of these actuators seemed to similar to typical electricstrictive polarization behavior. The multilayer ceramic actuator is about $0.6{\times}10^{-3}$ of strain.

The effects of sintering additives such as $Bi_2O_3$ and $V_2O_5$ on the microwave dielectric and sintering properties of (Zn, Mg)$TiO_3$ system were investigated. Highly dense samples were obtained for $(Zn_{0.8}Mg_{0.2})TiO_3$ at the sintering temperature range of $870{\sim}900^{\circ}C$ with $Bi_2O_3$ and $V_2O_5$ additions of <1wt.%, respectively. The microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ with 0.45 wt.% $Bi_2O_3$ and 0.55 wt.% $V_2O_5$ sintered at $900^{\circ}C$ were as follows: $Q{\times}f_o$=56,800 GHz, ${\varepsilon}_r$=22, and ${\tau}_f=-53ppm/^{\circ}C$. In order to improve temperature coefficient of resonant frequency, $TiO_2$ was added to the above system. The optimum amount of $TiO_2$ was 15 mol.% when sintered at $870^{\circ}C$, at which we could obtain following results: $Q{\times}f_o$ = 32,800 GHz, ${\varepsilon}_r$ = 26, and $\tau_f=0ppm/^{\circ}C$.

The $(Sr_{0.9}Ca_{0.1})TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at $600[^{\circ}C]$. The temperature properties of the dielectric loss have a value within 0.02 in temperature ranges of $-80{\sim}+90[^{\circ}C]$. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz].

Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method from target containing 5%, 25% and 50% Pb excess for applying ferroelectric random access memory (FRAM). PZT films were deposited at $300^{\circ}C$ and then they were crystallized by rapid thermal annealing (RTA) at $700^{\circ}C$. After RTA treatment, our results showed that all PZT films indicated perovskite polycrystalline structure with preferred orientation (110) and no pyrochlore phase was observed by X-ray diffraction (XRD) and by Scanning electron microscopy (SEM). A well-fabricated PZT film of excess Pb 25% capacitor showed a leakage current density in the order of $2.63{\times}10^{-7}A/cm^2$ at 100kV/cm, a remanent polarization of $3.385{\mu}C/cm^2$ and a coercive field of 41.32 kV/cm. The results showed that Pb excess of target affects to electrical properties of PZT thin film.

In recent year, BLT$(Bi_{3.25}La_{0.75}Ti_3O_{12})$ has been one of promising substitute materials at the ferroelectric random access memory applications. We manufactured $(Bi_{3.25}La_{0.75}Ti_3O_{12})$ Target with a ceramic process. The BLT target was sintered at $1100^{\circ}C$ for 4 hours. Using RF magnetron sputtering, a deposited BLT thin films were estimated about ferroelectric property as a functions of post annealing time. The BLT thin films showed a promoted ferroelectric characteristics at the post annealied sample for 30 minutes. This sample exhibited the (117) preferred crystal orientation, current density of $2{\times}10^{-8}A/cm^2$, a remanent polarization of $10{\mu}C/cm^2$ and a coercive field of 62.1 KV/cm respectively.

In this thesis, specimens was manufactured in general method annexing PMB-PZT system ceramic, and the following conclusion has been deduced. In XRD, the crystal structure of ceramic has the tetragonal structure which is close to rombohedral structure, and consequently the specimen characterized by MPB was manufactured. According to dopping with xPMB, electromechanical factor(kp) little is changed. kp was maximum value 23.37[%] at xPMB 0.03[mol%]. mechanical quality factor(Qm) was maximum value 237,04 at xPMB 0.03[mol%].

In this work, a CPW resonator was designed and fabricated to investigate the basic microwave properties, such as effective dielectric constant, of BST thin films. Their properties were used as basic data to simulate and design CPW tunable bandpass filter. We also report on gold/$Ba_{0.5}Sr_{0.5}TiO_3$(BST) ferroelectric thin film C-band tunable bandpass filters(BPFs) designed and fabricated on magnesium oxide substrates using CPW structure. The 2 pole filter was designed for a center frequency of 5.88 GHz with a bandwidth of 9 %. The BST based CPW filter offers a high sensitivity parameter as well as a low loss parameter. The tuning range for the bandpass filter with CPW structure was determined to be 170 MHz.

The USM uses friction between a mobile part (rotor) and a vibration part(stator), which is different from the principle of the conventional motor based on the interaction of electric and magnetic fields. In this thesis, a flat-type $L_1-B_8$ mode USM was designed and fabricated the characteristics of an ultrasonic vibration. The results of fabricated USM are as follows: (1) In case of ultrasonic motor with elastic-body of stainless, when applied voltage, frequency, pressing force of rotor were 50 [V], 27.9 [kHz], 1.5 [N], 5.0[mN m] respectively, the speed of revolution could be presented up to 0 [cm/s]. (2) In case of ultrasonic motor with elastic-body of brass, when applied voltage, frequency, pressing force of rotor were 50 [V], 21.4 [kHz], 1.5 [N], 1.4[mN m]respectively, the speed of rotor revolution was presented up to 0 [cm/s]. (3) The USM of elastic-body of stainless showing 1.17[%], somewhat low, in the maximum efficiency according to torque was superior to the USM of elastic-body of brass showing 0.34 [%]. The Flat-type $L_1-B_8$ mode USM had characteristics of typical drooping torque-speed, large torque and high speed, and operating in both directions by phase reversal.

The $Sr_{0.7}Bi_{2.3}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO2/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealing atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40{\mu}C/cm^2$ and 48kV/cm respectively. The dielectric constant and leakage current density annealing in oxygen atmosphere are 340 and $6.81{\times}10^{-10}A/cm^2$ respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

In this paper, the effect of device model parameter variation on three-dimensional embedded passive devices was investigated using statistical analysis. The optimized equivalent circuit models for several different structures were obtained from HSPICE simulation. The mean and the standard deviation of model parameters were extracted and the sensitivity analysis for each component was performed. From the analysis, the performance and parametric yield of the devices can be analyzed.

Electrical properties of $\{(Sr_xCa_{1-x})_{0.95-y-z}Bi_2Pb_{0.05+y}\})Ti_{1.02}O_3$ ceramic were studied as a function of Sr/Ca ratio and Bi, Pb contents. Dielectric properties of specimens with different x, y, z values were explained in terms of ionic polarizability with Molecular Additionally Rules and Clausius-Mosotti equation. For the composition of $\{(Sr_{0.62}Ca_{0.38})_{0.90}Bi_{0.01}Pb_{0.09}\})Ti_{1.02}O_3$ and $\{(Sr_{0.62}Ca_{0.38})_{0.905}Bi_{0.015}Pb_{0.08}\})Ti_{1.02}O_3$, dielectric constant$({\varepsilon}_r)$, quality factor(Q) and temperature coefficient(TC) were 389, 3048, -1490 and 394, 1869, -1340 at 1MHz, respectively.

In this paper bolt-tightened Langevin type vibrator was designed using longitudinal-torsional vibration. These two vibrations make rotary displacement at the end of the vibrator. ANSYS was used to determine shape and dimension of the vibrator in addition to resonant frequency, displacement and stress distribution. This kind of vibrator can be applied for a brakeless and gearless rotary motor which has high torque at low speed.

In order to improve the microwave dielectric properties of ZnO+$TiO_2$ ceramic systems, we studied the relations among microstructures, phases, and microwave dielectric properties at various mole ratio and sintering temperatures. The optimum composition was found to be 0.2ZnO+0.8$TiO_2$ when sintered at $1100^{\circ}C$, at which we could obtain following results: $Q{\times}f_o$ = 22,500 GHz, ${\varepsilon}_r$ = 73, and $\tau_f=+210ppm/^{\circ}C$.

In this study, the electrical properties were investigated for the deposited Ba,Sr)(Nb,Ti)$O_3$[BSNT] thin films grown on $Pt/TiO_2/SiO_2/Si$ substrate by RF sputtering method. The structural properties of the BSNT thin films affected by the $Ar/O_2$ rates were investigated. In the case of the BSNT thin films deposited with condition of 60/40$(Ar/O_2)$ ratio, the $BaTiO_3$, $SrTiO_3$ and $BaNbO_3$ phases were showed. The composition ratio of Nb and Ti in the BSNT thin films were nearly equivalent. Also, in the BSNT thin films deposited with condition of 60/40 and 80/20$(Ar/O_2)$ ratios, the composition of Ba, Sr, Nb and Ti were relatively uniform. The Ba, Sr, Nb and Ti in the BSTN thin films were not diffused into the Pt layer.

The ceramic filters were developed using technology similar to that of quartz crystal and electromechanical filter. However, the key to this development involved the theoretical analysis of vibration modes and material improvements of piezoelectric ceramics. The primary application of ceramic filters has been for consumer-market use. Accordingly, a major emhpasis has involved mass production technology, leading to low-priced devices. A typical ceramic filter includes monolithic resonators and capacitors packaged in unique configurations. Nakazawa developed a double-mode resonator as two acoustically coupled single resonators. And he developed 10.7MHz crystal filters using multi-energy trapping mode of thickness shear vibration. He succeeded in realizing a two-pole band pass filter response without external inductance by splitting a dot electrode to creat coupled symmetric and antisymmetric vibration modes. Accordingly, the simulation for ceramic filter were important. So that, this paper were investigated the pass frequency of filter on the electrode length and thickness of ceramic.

The sintering and dielectric characteristics of $(1-x)Al_2O_3-xLa_2O_3$ ceramics (x=0.2, 0.4, 0.5, 0.6, 0.8, 1.0) were investigated. The sample of x=0.6 composition showed a largest density$(6.5g/cm^3)$ in the all samples and its grain were very uniform. The dielectric constant of the samples linearly increased from 9 to 17 up to x=0.6 with a increasing of x. The temperature coefficient of resonance frequency for the samples showed a positive value at x=0.2 and a negative value at x>0.4.

Lanthanum nickel oxide$(LaNiO_3)$ powders have been prepared via a mechanochemical processing without any additional heat treatment. When a mixed lanthanum and nickel oxide was mechanically activated for 6 hours with 450 rpm, a stable and single phase perovskite powder was successfully synthesized and its crystallite size of about 90 nm is calculated by using the Scherrer equation.

The electrical properties of the praseodymium-based ZnO varistor ceramics, which are composed of Zn-Pr-Co-Cr-Dy oxides were investigated with $Dy_2O_3$ amount. The average grain size of varistor ceramics was greatly decreased from 18.2 to 4.6 pm with increasing $Dy_2O_3$ amount. The calculated nonlinear exponent$({\alpha})$ in varistor ceramics without $DY_2O_3$ was only 4.9, whereas the a value of the varistors with $DY_2O_3$ was abruptly increased in the range of 48.8 to 58.6. In particular, the maximum value of a was obtained by doping of 1.0 mol% $DY_2O_3$, reaching 58.6. The measured leakage current$(I_l)$ value in varistors without $DY_2O_3$ was $85.45{\mu}A$, whereas the $I_{\ell}$ value of the varistors with $DY_2O_3$ was very abruptly decreased in the range of 1.10 to $0.12{\mu}A$. In particular, the minimum value of $I_{\ell}$ was obtained by doping of 0.5 mol% $DY_2O_3$, reaching $0.12{\mu}A$. The tan $\delta$ varied in V-shape, with minimum 2.28% at 0.5 mol% $DY_2O_3$. The donor concentration and the density of interface states were decreased in the range of $(4.66{\sim}0.25){\times}10^{18}cm^3$ and $(5.70{\sim}1.39){\times}10^{12}/cm^2$, respectively, as $DY_2O_3$ amount is increased.

The degradation behaviour of ZPCCL-based varistor ceramics composed of 97.5 mol%ZnO-0.5 mol% $Pr_6O_{11}-1.0$ mol% $Cr_2O_3-0.5$ mol% $La_2O_3$ was investigated under various DC accelerated aging streses. The varistor ceramics sintered for 1 h exhibited excellent nonlinearity, in which the nonlinear exponent is 81.6 and the leakage current is $0.2{\mu}A$. It was found that this varistor ceramics possess high stability, in which the variation rates of varistor voltage, nonlinear exponent, and leakage current are -1.14%, -3.7%, and 85.0%, respectively, against DC accelerated aging stress. On the contrary, the varistor ceramics sintered for 2 h also exhibited high nonlinearity and stability, but they were bad characteristics, compared with the varistor ceramics sintered for 1 h.

Transducer for linear ultrasonic motor with symmetric and anti-symmetric modes was studied. The transducer was composed of two Langevin-type vibrators. In order to excite two vibration modes, Two Langevin-type vibrators must have 90-degree phase difference with each other. As result, tip of transducers moves in elliptical motion. In this paper, vibration shape of transducer was simulated and The resonant frequency and maximum displacement were calculated using the FEA (Finite Element Analysis).

This paper presents design and construct of flat type step-down piezoelectric transformer for the application to AC-adapters. This piezoelectric transformer operated in resonance vibration mode. In this paper, Finite element method(FEM) was used for analysis piezoelectric transformers. Vibration mode and electric field of piezoelectric transformer at resonance frequency were simulated. Using this simulation, we manufactured flat type piezoelecric transformer and measured its output characteristics. As results, output power was linearly increased by increasing input power at resonance frequency. And it was found that the transformer exhibited an output power of 11.4[W] at 60[V] input voltage. From these results, we expect that this piezoelecric transformer can be applied to AC adapters.

Microwave dielectric properties of $ZnWO_4$ ceramic were investigated with calcination and sintering temperatures. The dielectric properties required for such application are high dielectric constant$(\varepsilon_r)$, high $Q{\times}f_o$ value and low temperature coefficient of resonant frequency$(\tau_f)$. These requirement correspond to necessities for size reduction, excellent frequency selectivity, good temperature stability of devices. $ZnWO_4$ ceramics could be sintered at low $1075^{\circ}C$, which was comparatively low temperature for microwave dielectrics. As a result, $ZnWO_4$ showed the dielectric constant of 13, quality factor($Q{\times}f_o$ value) of 22000 and 'temperature coefficient of resonant frequency$(\tau_f)$ of $-65{\pm}5ppm/^{\circ}C$.

The microwave dielectric properties and the structure of $Sb_2O_5$ modified $BiNb_xSb_{1-x}O_4$ ceramics were investigated. The structure of these ceramics were orthohombic phase at all sintering temperatures and there were not the second phase. These ceramics added sintering additive such as CuO and $V_2O_5$ were sinterable at a low temperature$(880^{\circ}C{\sim}960^{\circ}C)$ by liquid phase. Dielectric properties of $BiNb_xSb_{1-x}O_4$ ceramics were also improved than these of $BiNbO_4$ ceramics. The content of modified atom controlled the microstructure, dielectric constant and quality factor. As a result, We could obtain following result; ${\varepsilon}r$=42~44, $Q{\cdot}f_0$=20,000~42,000GHz, $\tau_f=-7{\sim}-28ppm/^{\circ}C$.

In this paper, specimens was manufactured in general method annexing PAN-PZT+0.8wt%Mn+1wt% Nb ceramics doped by Sr(0.0 ~ 1.2 wt%). and the following conclusion has been deduced. In XRD, the crystal structure of ceramic has the rombohedral structure and consequently the specimen characterized by MPB was manufactured. According to dopping with Sr, electromechanical factor(kp) little is changed. kp was maximum value 31.31[%] at Sr 1.2[wt%]. mechanical quality factor(Qm) was maximum value 371.879 at Sr 0.6[wt%].

In this paper, we present the simulation results of multi-layer VCO(voltage controlled oscillator), which is composed of resonator, oscillator, and buffer circuit, using EM simulator and nonlinear RF circuit simulator. EM simulator is used for obtaining the EM(Electromagnetic) characteristics of conductor pattern as well as designing the multi-layer VCO. Obtained EM characteristics were used as real components in nonlinear RF circuit simulation. Finally the overall VCO was simulated by the nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was DuPont 951AT, which will be applied for LTCC process. The structure of multi-layer VCO is constructed with 4 conducting layer. Simulated results showed that the output level was about 4.5 [dBm], the phase noise was -104 [dBc/Hz] at 30 [kHz] offset frequency, the harmonics -8 dBc, and the control voltage sensitivity of 30 [MHz/V] with a DC current consumption of 9.5 [mA]. The size of VCO is $6{\times}9{\times}2$ mm(0.11[cc]).

PZT powder was prepared by partial oxalate method using $(Zr_{0.53}Ti_{0.47})O_2$, $Pb(NO_3)_2$ and $(COOH)_2{\cdot}2H_2O$ as a precipitant. $Nb_2O_5$ additive effect on microstructure and piezoelectric properties of PZT ceramics were investigated. The coexistence of rhombohedral and tetragonal phases of PZT ceramics at the sintering temperature of $1100^{\circ}C$ was revealed from the X-ray diffraction patterns. The grain size PZT ceramics was decreased with the increase $Nb^{5+}$. and the sinterbility of PZT ceramics was decreased with the increase $Nb^{5+}$ addition. The electromechanical coupling factors $K_p$ show above 0.60 at $1100^{\circ}C$ sintering temperature by $Nb_2O_5$ addition above 0.6mol%.

The microwave dielectric properties and the microstructures of $Tm_2O_3$-modified $BiNbO_4$ ceramics were investigated. $Bi_{(1-x)}Tm_xNbO_4$ ceramics combined with orthorhombic and triclinic phases were identified at sintering temperatures of $920{\sim}960^{\circ}C$. The apparent density decreased slightly with the increasing Tm content. Regardless of the Tm content the dielectric constant $(\varepsilon_r)$ of all compositions except x=0.1 in $Bi_{(1-x)}Tm_xNbO_4$ ceramics saturated at the range of 42~44. The $Q{\times}f_0$ values of 6,000-12,000(GHz) were obtained for all compositions when the sintering temperatures were in the range of $920{\sim}960^{\circ}C$. The temperature coefficient of the resonant frequency$(\tau_f)$ can be also adjusted with increasing the amount of the doped Tm from a positive value of $+15ppm/^{\circ}C$ to a negative value of $-20ppm/^{\circ}C$. The $Bi_{(1-x)}Tm_xNbO_4$ ceramics can be possibly applied to multilayer microwave devices with low processing temperatures.

The differences of the effects of mechanical substance pre-activation in the mills with divers force effect schemes on the self-propagating high temperature synthesis (SHS) of the $SiO_2$ + 37.5% Al system were investigated. The power saturation of activated material state are estimated referring on the variations of dilatometry curve paths. The effects of activation time on the temperature of sample self-ignited in the furnace, combustion temperature and completeness of the quartz reaction with aluminium were determined. The enhancing effects of organic modifiers of quartz particle surfaces on the further SHS synthesis development were shown.

Powder synthesis using the alkoxy precursor technique exhibits processing flexibility not available in traditional high temperature solid-state reaction. With proper process control, impurities can be reduced to very low levels. The major distinction of the present work lies in the method of accomplishing the hydrolysis reaction. In the present case, water is not added to the system. Instead the metal alkoxide/alcohol solution is heated to a temperature at which water is formed through dehydration of the alcohol solvent, causing precipitation of the corresponding metal oxide (hydroxide). The present method provides a means of producing amorphous alumina.

In this paper, two kinds of windmill type motors which have a disk shape and a ring shape piezoelectric ceramics were studied. And characteristics of two models were compared with each others. A windmill type ultrasonic motor is composed of a stator, a rotor, and a ball bearing. The stator is made of a piezoelectric ceramics and two metals endcaps. When the piezoelectric ceramics vibrate, displacement of torsonal vibration appear at metal endcaps. The motor with 11.0[mm] diameter was studied by finite element analysis. The voltage of 100[V] was supplied at each model. Resonance frequency of 206.875[KHz] was obtained at the disk type, but ring type was 137.562[KHz]. The maximum torsonal displacement of $1.112[{\mu}m]$ was obtained at the disk type, but ring type was $1.698[{\mu}m]$.

In this paper, Characterization for several 3-D embedded passive elements with different structures was performed. The equivalent circuit optimization for embedded inductor was performed by HSPICE simulation software. After extracting each parameter values, the difference of parameter from each structure was examined. From this work, effective characterization of passive devices with similar structure will be possible.

The $0.96MgTiO_3-0.04SrTiO_3$ ceramics with $B_2O_3$(10wt%) were prepared by the conventional mixed oxide method. The structural properties were investigated with sintering temperature by XRD. According to the X-ray diffraction pattern of the $0.96MgTiO_3-0.04SrTiO_3$ ceramics with $B_2O_3$(10wt%), the ilmenite $MgTiO_3$ and perovskite $SrTiO_3$ structures were coexisted and secondary phase of the $MgTi_2O_5$ were appeared. In the case of $0.96MgTiO_3-0.04SrTiO_3+B_2O_3$(10wt%) ceramics sintered $1225^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 19.82, 62,735GHz, $-2.983ppm/^{\circ}C$, respectively.

The application of the ultrasonic nozzle has been extended because it is possible atomization of liquid material. In this study, the characteristics of the ultrasonic nozzle and ceramic oscillator were investigated. The oscillator for the ultrasonic nozzle were made piezoelectric ceramic of $Pb[(Sb_{1/2}Nb_{1/2})_{0.035}-(Mn_{1/3}Nb_{2/3})_{0.065}-(Zr_{0.49}Ti_{0.51})_{0.90}]O_3$. The electromechanical coupling factor$(k_p)$ and mechanical quality factor$(Q_m)$ showed the values of 0.555, 1,214 respectively when the Zr/Ti ratio was 49/51. Moreover, this oscillator will have the temperature stability because it's curie temperature is $322[^{\circ}C]$. The driving current of ultrasonic nozzle showed the value of 80[mA] when the driving time was 10[min.]. Also, The surface temperature of ceramic oscillator showed $80[^{\circ}C]$ at driving time 10[min.] We knew that the ultrasonic nozzle had stabile driving above 10[min.].

This paper is concerned on method of simultaneous force(stress) and temperature sensing with PVDF film. PVDF film has piezoelectric and pyroelectric properties. Therefore, it senses changes of stress and temperature. But it's output is affected with two properties. Using different medium in a sensing element, this problem is solved. Two structures induce different equations that its solutions are changes of stress and temperature. This method and result is applicable in skin sensor that has complexity of material and structure.

Ti films were deposited onto $100{\times}100$ mm alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T. ${\sim}400^{\circ}C$, annealing temperature of $100{\sim}400^{\circ}C$ and sputtering gas pressure of $1.3{\sim}3.0{\times}10^{-2}$ Torr. And the films were examined by X-ray diffraction analysis (XRD), scanning electron microscopy(SEM) and 4-point measurement system. The best electrical and structural properties obtained by substrate temperature of ${\sim}200^{\circ}C$, target-substrate distance of ~14 cm and sputtering pressure of $1.3{\sim}1.7{\times}10^{-2}$ Torr. Also at that condition the most excellent adhesion was observed.

A DC current sensor is disclosed in which two pairs of saturable cores are provided so as enclose a conductor carrying a direct current to be measured. On each of the saturable cores, a bias winding, a feedback winding and an output winding are wound. Circuit for detection of an asymmetry in the magnetization current, generated by a reference alternating voltage, in a signal-conditioner. The reference alternating voltage is fed to the respective series circuits such that no resultant induction current is induced in the modulating current. The voltages over the resistor form input signals for two peak value detectors, the strength of the output signal of which represents the degree of asymmetry of magnetization current. This paper describes the development a DC current sensor and its signal-conditioner.

Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.

Spinel $LiMn_2O_4$ and $LiMn_{1.9}Mg_{0.05}Zn_{0.05}O_4$ powders were synthesized by solid-state method at $800^{\circ}C$ for 36h. Crystal structure and electrochemical properties were analyzed by X-ray diffraction, charge-discharge test, cyclic voltammetry and ac impedance to $LiMn_2O_4$ and $LiMn_{1.9}Mg_{0.05}Zn_{0.05}O_4/Li$. All cathode material showed spinel structure in X-ray diffraction. $LiMn_{1.9}Mg_{0.05}Zn_{0.05}O_4/Li$ cell substituted $Mg^{2+}$ and $Zn^{2+}$ showed excellent discharge capacities than other cells, which it presented about 120mAh/g at the 1st cycle and about 73mAh/g at the 250th cycle, respectively. AC impedance of $LiMn_{1.9}Mg_{0.05}Zn_{0.05}O_4/Li$ cells showed the similar resistance of about $65{\sim}110{\Omega}$ before cycling.

촉매 구조에 따른 반도체식 가스센서의 가스 감지 특성이 고찰되었다. 촉매로는 Pd를 사용하였고, 0.5 ~ 10wt% 의 다양한 농도로 약 15nm 크기의 $SnO_2$ 분말에 도핑, 가스센서를 제작하였다. 또한 열처리 온도를 $500{\sim}600^{\circ}C$로 다르게 하여 각 촉매 구조에 따른 특성의 변화를 관찰하였다. 그 결과 가스 감지 특성은 열처리 온도가 높을수록 감지 특성이 향상되었고, Pd 농도가 5wt% 에서 감도가 0.65로 좋은 감지 특성을 나타내었다. 5wt% Pd가 도핑된 가스센서는 2시간 동안 $400^{\circ}C$에서 aging 후에도 감도 값이 안정된 우수한 특성을 나타내었다.

This paper investigated that resonant frequencies of microstrip patch antenna were agile when piezoelectric materials were used as the antenna substrates. When the bias is applied on them, thickness of the substrate is varied according. to the piezoelectric phenomenon. The microstrip patch antenna using Quartz substrate was fabricated and designed by Ensemble v 7.0 simulator. We fabricated the microstrip antennas using Quartz(Y-cut) as its substrate. When the operating frequencies of the microstrip antenna were 7.045GHz, 7.773GHz 8.18GHz the frequency shifts versus electric field, Emax=4[kV/cm], were 21MHz, 26MHz and 28MHz, respectively.

The Displacement current measurement system used in this experiment because detecting the dynamic behavior of monolayers at the air-water interface is possible. It basically consists of a film balance, a pair of electrodes connected to each other through a sensitive ammeter. Here, one electrode is suspended in air and the other electrode is placed in the water. PBLG phase transformation measured by Maxwell-displacement-current-measurement method in surface of the water. Measured (surface pressure, displacement current and dipole moment) of monolayers of PBLG on the water surface. We measured displacement current that occur when changed temperature. Could know that displacement current is proportional in increase of temperature and great as experiment result.

We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 10[mN/m]. In processing of a device manufacture, we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/Poly-$\gamma$ Benzyl $_D$-Glutamate/Al; the number of accumulated layers is 1, 3, 5 and 7. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. We determined electrochemical measurement by using cyclic voltammetry with a three-electrode system. LB film accumulated by monolayer on an ITO. In the cyclicvoltammetry, An Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode measured in $LiBF_4$ solution, stable up to 0.9V vs. Ag/AgCl.

Chalcogenide glassy semiconductors(CGS) can be obtained by the melt quenching technique. We have investigated the thin film heterostructures : metal-chalcogenide glassy semiconductors, where metal is copper, and chalcogenide glassy semiconductors are glasses of the system As-Se. Cu/CGS film heterostructure were produced in the vacuum evaporator by the method of vacuum thermal evaporation. Doped films are very sensitive to external actions, and this property allows developing supersensitive precision sensors of temperature, humidity, illumination, and etc. based on them. Cu/CGS film has shown that resistance strongly depend on the temperature. The slop of temperature and resistance shows linear.

This paper describes on the fabrication and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain gauges for harsh environment applications. The Ta-N thin-film strain gauges are sputter deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Ta-N thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is $1.097{\sim}1.21mV/V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of $4.3{\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was $4.3{\mu}m/hr$. The 3C-SiC epitaxical films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near $796cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The heteroepitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra$(2{\theta}=41.5^{\circ})$.

This paper described on the fabrication of microstructures by DRIE(deep reactive ion etching). SOI(Si-on-insulator) electric devices with buried cavities are fabricated by SDB technology and electrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing($1000^{\circ}C$, 60 min.), The SDB SOI structure was thinned by electrochemical etch-stop. Finally, it was fabricated microstructures by DRIE as well as an accurate thickness control and a good flatness.

Pyroelectric and dielectric properties of modified PZT thin film and bulk ceramics were studied. In case of bulk specimens were prepared by conventional ceramic process and thin films with same composition and (111) preferred orientation were prepared by the sol-gel process. Their crystal structure, pyroelectric and dielectric properties were investigated after poling at $150^{\circ}C$ for 30 min for bulk ceramics and no poling treatment, respectively. Dielectric constants and losses of bulk and thin film were 600, 875 and 0.028, 0.025, respectively. Pyroelectric coefficients obtained were $50nC/cm^2K$ and $30nC/cm^2K$, respectively.

The effect of $MnO_2$ addition in $0.05Pb(Sn_{0.5}Sb_{0.5})O_3-0.8PbZrO_3-0.15PbTiO_3$(0.05PSS-0.8PZ-0.15PT) ceramics on crystal structure and electrical properties were studied. The sintering temperature and time were $1230^{\circ}C{\sim}1270^{\circ}C$ and 2hr, respectively. Then crystal structure, dielectric and pyroelectric properties were investigated. All the poled specimens showed the lower dielectric constant and $tan{\delta}$ than the unpoled specimens. Dielectric constant at 1kHz of the 0.05PSS-0.8PZ-0.15PT(MnO2 0.3wt%) system specimen sintered at $1250^{\circ}C$ for 2hr were 270 and showed the lowest $tan{\delta}$ of 0.2% after poling of $2kV_{DC}/mm$ at $150^{\circ}C$ for 30 minutes. Pyroelectric coefficient was maximum value of $50nC/cm^2K$ and Curie temperature was $224^{\circ}C$.

$(Pb_{1-x}Sr_x)TiO_3$ $(0.6{\leq}x{\leq}0.8)$ thin films were prepared by the MOD method for tunable microwave device application and their characteristics were investigated as a function of Sr content(x) and applied field. Thin films showed a homogeneous microstructure and the tetragonality(c/a) was slightly decreased with increasing Sr content. With increasing Sr content, Curie temperature of the thin films showed a decreasing tendency. For the PST thin films, the dielectric constant at room temperature, Tc, and $tan{\delta}$ were 750~1900, $-70^{\circ}{\sim}-30^{\circ}C$ and 0.025~0.04, respectively.

Since Metallo-Porphyrin (MP) is very interesting compound due to its unique electronic and redox properties and it is also chemically and thermally stable, MP has been studied for potential memory and switching devices. In this study, thin films of 5,10,15,20 - Tetrakis - Octadecyloxymethylphenyl - Porphyrin - Zn(II) (Zn-TPP) were prepared by the Langmuir-Blodgett (LB) method and characterized by using UV/vis absorption spectroscopy and cyclic voltammetry. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was $135{\AA}^2$/molecule. The current-voltage (I-V) characteristics of these films were investigated.

Nanoparticles of titanium dioxide$(TiO_2)$ were prepared by photochemical synthesis. Surface structure, morphology and particle size of $TiO_2$ thin films were investigated by UV-VIS spectrophotometer, scanning electron microscopy(SEM) and transmission electron microscopy(TEM). All process was prepared at room temperature. The absorption peak of the films was showed at 360nm and $TiO_2$ nanopaticle size was observed at about 20~30nm. Electron diffraction ring patterns of $TiO_2$ nanoparticles and crystallographic spacing were observed by TEM. As a result, crystallographic spacing was about 3.6A in HR-TEM micrographs.

Nanoparticle size of Titanium dioxide thin films was prepared by novel method. Particle size and surface structure of $TiO_2$ thin films were investigated by atomic force microscopy(AFM), scanning electron microscopy(SEM). All thin films process were prepared at room temperature. Particle size was reduced from 100 to 30nm with increasing amount of $Ti[OCH(CH_3)_2]_4$ observed by AFM images. All thin films were irradiated for 5 minutes by white light. Increasing the annealing temperature, particles size was increased. In the $TiO_2$(40%) thin films was annealed at $300^{\circ}C$ for 30minutes, the particle size was about 10nm.

Characteristics of ohmic Co/Si/Co contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Co/Si/Co sputtered sequentially. The annealings were performed at $800^{\circ}C$ using RTP in vacuum ambient and $Ar:H_2$(9:1) ambient, respectively. The specific contact resistivity$(\rho_c)$, sheet resistance$(R_s)$, contact resistance$(R_c)$, transfer length$(L_T)$ were calculated from resistance$(R_T)$ versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were $\rho_c=1.0{\tiimes}10^{-5}{\Omega}cm^2$, $R_c=20{\Omega}$ and $L_T$ = 6.0 those of sample annealed at $Ar:H_2$(9:1) ambient were $\rho_c=4.0{\tiimes}10^{-6}{\Omega}cm^2$, $R_c=4.0{\Omega}$ and $L_T$ = 2.0. The physical properties of contacts were examined using XRD and AES. The results showed that cobalt silicide was formed on SiC and Co was migrated into SiC.

Dendrimers are well-defined macromolecules exhibiting a tree-like structure, first derived by the cascade molecule approach. Peculiar features of the dendritic geometry are the large number of end groups as well as the shape persistence in higher generations, approaching spherical geometry. And one of the most peculiar characteristics of dendritic macromolecules is their controlled molecular structure and orientation, which means that they have a practical application in achieving a highly organized molecular arrangement. We attempted to fabricate a dendrimer LB films containing 48 pyridinepropanol functional end group. As the pyridinepropanol functional group could form a complex structure with metal ions. We investigated the surface activity of dendrimer films at air-water interface compared with pure dendrimer and its complex with $Fe^{2+}$ ions into subphase. We though that metal ions are contributed to networking or branching reaction between dendrimers. And we expected that it can result in the differences on the electrical properties. We have studied the electrical properties of the ultra thin dendrimer LB films investigated by the current-voltage characteristics of metal dendrimer LB films/metal (MIM) structure.

In this study, we analyzed the LPG and LNG sensitivity measurement and voltage variation using catalytic type gas sensor characteristics in catalytic combustion type gas detecter sensors. gas detector shall operate as intended when exposed for 24 hours to air having a relative humidity of 0~85 percent at a temperature of $20[{\mu}m]$ and humidity of 45 percent at a temperature of $-10{\sim}40[^{\circ}C]$ the gas detecter sensors are to be subjected to operation for 210 days in an area that has been detemined to be equivalent to a typical residential atmosphere with an air velocity of 50 [cm/sec]. The source of energy for a gas detector sensors employing a supplementary basic circuit is energized from a separate source of supply direct applied voltage 2.1[V], 2.2[V], 2.3[V]. As a result, it was confirmed that the relative humidity and temperature by regression each analysis, compared to the LPG characteristic graph and methane characteristics graph by a relative humidity of 0 ~ 85 [%] at a temperature range of $-10{\sim}40[^{\circ}C]$ show a similar linear pattern on the whore.

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in the low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field$(H_k)$ as a function of a thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and $320^{\circ}C}$ respectively for 2 hours. Anisotropy field$(H_k)$ of film is measured by using a MH loop tracer. Its magnetic permeability of a film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb film is decreased due to the skin effect with increasing a thickness of the CoZrNb film, and hence its driving frequency is lowered. And, it was examined on the permeability and impedance to fabricate the MI sensor which acts at a low frequency by thickening a CoZrNb film relatively.

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

Conductivity and transmittancy of ZnO is very excellent and the price is low. So the study of transparent electrode materials and electromagnetic wave shielding wall is actively in progress. We add $Al_2O_3$(0.0, 2.0, 3.0, 5.0wt%) to ZnO and observe microscopic structure and conductivity. For XRD observation, Al peak of AZO is increased by increasing the amount of $Al_2O_3$. We observe that the size of grain is reduced by increasing the liquid phase of grain boundary to SEM observation. Conductivity of AZO is increased by increasing the amount of $Al_2O_3$. We confirm the application possibility of the materials for electromagnetic wave reflection materials.

Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.

In this work, porous silicon(PS) layer is used as a sensing material to detect organic gases. To do this, PS sensors with membrane structure are fabricated. The sensors were made by applying the technologies of membrane formation by anisotropic etching of silicon, and PS layer formation by anodization in HF solution. From fabricated sensors, current-voltage (I-V) curves were measured against ethanol (called alcohol), methanol and acetone gases evaporated from 0.1 to 0.5% solution concentrations at $36^{\circ}C$. As the result, all curves showed rectifying behavior due to a diode structure between Si and PS, and the conductance of sensor devices increased largely with the organic solution concentration at high voltage of 5V.

Instead of a solution process producing amorphous $LiV_3O_8$ form, we prepared Lithium vanadate glass by melting $Li_2O-P_2O_5-V_2O_5$ and $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$ composition in pt. crucible and by quenching on the copper plate. From the crystallization of $Li_2O-P_2O_5-V_2O_5$ and $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$, we could abtain glass-ceramics having crystal phase, LiV3O8 from glass matrix. The material heat-treated at lower-temperature, $250^{\circ}C$ had less crystalline and lower capacity, But the material heat-treadted at higher-temperature, $330^{\circ}C$ had higher capacity and $Li_2O-P_2O_5-V_2O_5$ glass-ceramics had higher capacity than $Li_2O-P_2O_5-Bi_2O_3-V_2O_5$ glass-ceramics.

Electrochemical capacitors are becoming attractive energy storage systems particularly for applications involving high power requirements such as hybrid systems consisting of batteries and electrochemical capacitors for electric vehicle propulsion. Both of amorphous cobalt oxide and manganese dioxide were prepared by sol-gel process reported in our previous work. Nanostructured supramolecular oligomer of 1,5-diaminoanthraquinone(DAAQ) coated metal oxides were successfully prepared by electrochemical oxidation from an acidic non-aqueous medium. We established process parameters of the technique for the formation of nano-structured materials. Furthermore, improved the capacitive properties of the nano structured metal oxide electrodes using controlled solution chemistry. $CoO_2$ and $MnO_2$-based composite electrode showed relatively good electrochemical behaviors in acidic electrolyte system with respect to specific capacity and scan rate dependency.

A carbon monoxide gas sensor utilizing Pt-SiC, Pt-SnO2-SiC diode structure was fabricated. Since the operating temperature for silicon devices in limited to 200oC, sensor which employ the silicon substrate can not at high temperature. In this study, CO gas sensor operating at high temperature which utilize SiC semiconductor as a substrate was developed. Since the SiC is the semiconductor with wide band gap. the sensor at above $700^{\circ}C$. Carbon monoxide-sensing behavior of Pt-SiC, Pt-SnO2-SiC diode is systematically compared and analyzed as a function of carbon monoxide concentration and temperature by I-V and ${\Delta}$I-t method under steady-state and transient conditions.

This paper presents the structures for a CPW shunt RF switch using MEMS(Micro Electro Mechanical System). Recent development in MEMS technology has made the design and fabrication of micro-mechanical switches as new switching elements. The micro-mechanical switches have low insertion loss, negligible power consumption, and good isolation compared to semiconductor switches. The fabricated structure shows an insertion loss of 2dB at 20GHz When a bias voltages of 12V is apply.

We investigate the junction between CdZnTe and a variety of metals with the aim of determining whether the choice of metal can improve the performance of X-ray image detectors, in particular minimizing the dark current. The samples consist of $5{\mu}m$ thick CdZnTe with top electrodes formed from In, Al, and Au. For each metal, current transients following application of valtages from -10V to 10V are measured for up to 1 hour. We find that dark currents depending on the metal used. The current is controlled by hole injection at the metal-CdZnTe junction and there is consistent trend with the metal's work function possibly and it seems that metal to CdZnTe layer junction is ohmic contact.

Amorphous selenium based flat panel detectors convert incident x-ray to electric signal directly. Flat panel detectors gain more interest real time medical x-ray imaging. TFT array and electric readout circuits are used in this paper offered by LG.Philips.LCD. Detector is based on a $1536{\times}1280$ array of a-Si TFT pixels. X-ray conversion layer(a-Se) is deposited upper TFT array with a $400{\mu}m$ by thermal deposition technology. Thickness uniformity of this layer is made of thickness control system technology$({\leq}5%)$. Each $139{\mu}m{\times}139{\mu}m$ pixel is made of thin film transistor technology, a storage capacitor and collecting electrode having geometrical fill factor of 86%. This system show dynamic performance. Imaging performance is suited for digital radiography imaging substitute by conventional radiography film system.

ZnO thick films by Sol-Gel processing were investigated electrics, optics and the sensing characteristics of CO gas. Using the znic acetate dihydrate and acetylaceton (AcAc) as a chelating agent, stable ZnO sol was synthesized. ZnO phase was crystallized through the heat-treatment at $70^{\circ}C$ for 4hrs and influenced the sensing characteristics of the electrics and CO gas by uniform particle distributions not related particle size. The samples on the alumina substrate by thick films were investigated the properties of electrics and the effect of sensing. The sensitivity was so excellent in the sample of the heat-treatment at $600^{\circ}C$ for 12hrs and good in the heat-treatment for 1hrs generally. Crystallization and volatilization of organic materials according to the change of heating treatment temperature of thick films were analyzed by TG-DTA, XRD and mirostructure of thick films were observed by SEM.

$MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in en atmosphere by RF reactive sputtering. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}$mtorr and all deposited films were annealed at $500^{\circ}C$ for 5hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by XRD. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO.

최근 나노 구조 (nano structure)를 만들기 위한 시도 중 하나로서 스스로 조직화(self organization)하여 나노 구조를 형성하는 물질을 나노 소자 제작을 위한 형틀 (template)로 이용하려는 시도가 활발히 진행되고 있다. 이러한 물질로서 주목을 받고있는 것 중 하나가 전해질 용액에서 알루미늄을 양극산화(anodization) 시켰을 때 형성되는 다공성 알루미나 박막이다. 본 연구에서는 고 순도 알루미늄을 기계적으로 연마(mechanical polishing)하고 공기 분위기에서 어닐링 (annealing)하여 알루미늄을 재결정화(recrystallization) 시키고 인가 전압이 40 V인 정 전압하에서 0.3 M의 수산(oxalic acid)을 전해질로 사용하면서 양극산화를 수행하여 평균 직경이 65 nm인 고도로 배열된 육방밀집구조의 나노 다공성 박막을 제작하였다. 또한 같은 방향의 육방밀집 배열은 크기가 수 ${\mu}m$인 영역(grain)을 형성하고 있었으며, 평균적인 pore의 밀도는 $1.1{\times}10^{10}/cm^2$였다.

In this paper, we have fabricated 4H-SiC schottky diodes utilizing a metal-oxide overlap structure for electric filed termination. The barrier height and Ideality factor were measured by current-voltage, capacitance-voltage characteristics. Schottky barrier height(SBH) were 1.41ev for Ni and 1.35eV for Pt, 1.52eV for Pt/Ti at room temperature and Pt/Ti Schottky diode exhibited Ideality factor was 1.06 to 1.4 in the range of $25^{\circ}C{\sim}200^{\circ}C$. To improve the reverse bias characteristics, an edge termination technique is employed for Pt/Ti/4H-SiC Schottky rectifiers and the device show excellent characteristics with higher blocking voltage up to 780V compared with unterminated devices.

This letter focuses on the liquid crystal alignment characteristics according to the properties of hydrogenated amorphous carbon(a-C:H) thin film deposited by RPECVD(Remote Plasma Enhanced Chemical Vapor Deposition) method using $C_2H_2$ and He gases. The properties of the deposited thin films were controlled by the ion beam irradiation time and ion beam energy. The results show that not ion beam energy but ion beam irradiation time plays an important role in the properties of a-G:H thin films. As the ion beam irradiation time increases, not only the sp2 concentration in a-G:H thin films but also liquid crystal pretilt angle was varied.

The study of photoconductor materials is demanded for development for flat-panel digital x-ray Imager. In this paper, We investigated the feasibility of application as x-ray image sensor using Cd(Zn)Te compound with high stopping power on high radiation. These Cd(Zn)Te samples were fabricated by vacuum thermal evaporation method to large area deposition and investigated I-V measurement as applied voltage. The experimental results show that the additional injection Zn in CdTe film reduced the leakage current, for the $Cd_{0.85}Zn_{0.15}Te$ detector, the net charge had the highest value as $144.58pC/cm^2$ at 30 V.

Recently, amorphous selenium is used as x-ray conversion material for flat-panel x-ray detector. In this paper, we investigated the effect of breakdown under high voltage and leakage current in PN-type multi-layer structure based on p-type a-Se and n-type conductive thin film. Experimental results show that the multi-layer based detector reduced leakage current because n-type CeO2 conductive layer prevent from hole injection into a-Se layer from collection electrode, Also, the breakdown voltage was improved by dielectric layer between a-Se and top electrode.

Present. direct method x-ray conversion detector is studied by abroad medical instrument and country with amorphous Selenium. And we search the method for large area x-ray detector. Amorphous-Selenium based photoreceptor is widely used on the X-ray conversion materials. But amorphous-selenium based x-ray conversion detector is broken by high voltage and leakage defect point. In this paper, We investigated top-electrode distance rate to improve defect point and high voltage broken. The result to appoint to made large area x-ray conversion detector with base data.

The material that is both conductive in electricity and transparent to the visible-ray is called transparent conducting thin film. It has many field of application such as solar cell, liquid crystal display, transparent electrical heater, selective optical filter, and a optical electric device. In this study, indium tin oxide (ITO ; Sn-doped $In_2O_3$) thin films were deposited on $SiO_2$/soda-lime glass plates by a dc magnetron sputtering technique. The crystallinity and electrical properties of the films were investigated by X-ray diffraction(XRD), atomic force microscopy (AFM) scanning and 4-point probe. The optical transmittance of ITO films in the range of 300-1000nm were measured with a spectrophotometer. As a result, we obtained polycrystalline structured ITO films with (222), (400), and (440) peak. Transmittance of all the films were higher than 90% in the visible range.

Ferroelectric $Bi_{4-x}Nd_xTi_3O_{12}$(BNdT) thin films with the composition(x=0.75) were prepared on pt/Ti/$SiO_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BNdT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atmosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}Nd_xTi_3O_{12}$(X=0.75) thin film capacitors with a Pt top electrode showed better ferroelectric properties. At the applied voltage of 5V, the dielectric constant$(\varepsilon_r)$, dissipation factor$(tan{\delta})$, remanent polarization(2Pr) and nonvolatile swiching charge of the $Bi_{4-x}Nd_xTi_3O_{12}$(x=0.75)thin films were about 346.7, 0.095, $56{\mu}C/cm^2$ and $38{\mu}C/cm^2$ respectively. Also the capacitor did not show any significant fatigue up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1MHz.

$SnO_2$ powders were prepare by precipitating $Sn(OH)_4$ from an aqueous solution of $SnCl_4{\cdot}5H_2O$, pH 9.5. The effects of stability and sensitivity of $SnO_2$ thick film sensors added with various amounts, $SiO_2$, $Al_2O_3$, $ZrO_2$, $TiO_2$ have been investigated. It is shown that the 3wt% $Al_2O_3$ or $SiO_2$ can improve the stability of $SnO_2$ gas sensor at an operating temperature of $350^{\circ}C$.

$Cu_2ZnSnS_4$ (CZTS) thin film is one of the candidate materials for the solar cell. It has an excellent optical absorption coefficient as well as appropriate 1.4~1.5eV band gap. The purpose of this study is replacing a half of high-cost Indium(In) atoms with low-cost Zinc(Zn) atoms and the other half with low-cost Tin(Sn) atoms in the lattice of CIS. In annealing process of thin films deposited with mixture target, the thin films were appeared the peeling. The resistivity was decreased. Thin films were deposited on ITO glass substrates using a compound target which were made by $CU_2S$, ZnS, $SnS_2$ powder were sintered in the atmosphere of Al at room temperature by rf magnetron sputtering We investigated potentialities of a low-cost material for the solar cell by measuring of thin film composition, the structure and optical properties. We could get an appropriate $Cu_2ZnSnS_4$ composition A (112) preferred orientation was appeared without annealing temperature as shown in the diffraction peaks of the CIS cells and was available for photovoltaic thin film materials. The band gap increased from 1.4 to 1.7eV as the composition ratio of Zn/Sn.. The optical absorption coefficient of the thin film was above $10^4cm^{-1}$.

The optogalvanic signals were measured using hollow cathode discharge tube with argon as buffer gas at change of discharge currents. A change of ionization rate due to electron collision causes an increase or decrease of the electric conductivity. This change in electric conductivity generates the optogalvanic signal. We conclude that optogalvanic signal has close relation with the lowest metastable atoms density at low current.

Energy distribution function for electrons in $SF_6+Ar$ mixtures gas used by MCS-BEq algorithm has been analysed over the E/N range 30 ~ 300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] $SF_6+Ar$ mixtures were measured by time-of-flight(TOF) method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with theoretical for a rang of E/N values. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of the molecules.

Assessing the condition of air insulation by measuring electromagnetic wave generated in it by partial discharges gives warning of developing faults and breakdown which may give some bad effects to other thing concerned with it. Electromagnetic wave are taken from UHF antenna with 20k ~ 2GHz frequency range. The signal waveform and FFT(Fast Fourier Transform) results from UHF antenna for PD(partial discharge) generated from two different electrode(needle-plane, needle-needle) configurations are shown and it is processed by using PRPD($\Phi-q-n$ distribution) method. Cumulative pulse sequence during 100 period is compared with PRPD method. This also will show the possibility of making apparent distinction between two PD sources.

This paper describes the characteristic analyses and a new design of the bushing for the pole transformers. The mechanical breakdown of the upper part of the bushing was frequently occurred. This caused the leakage of mineral oil, resulted in the interruption of electric power. Therefore, the bushings were investigated by the material analytical method and Finite Element Method. The analyses were performed by the Induced Coupled Plasma(ICP), X-ray diffraction(XRD), Scanning Electron Microscopy(SEM), and Dielectric Thermal Analyzer(DETA). Also, the Von-Mises stress of the top part of bushing was determined by using ANSYS program. The Von-Mises stress of the newly designed bushing was reduced about 50%. Therefore, if we apply the newly designed bushing, the number of mechanical breakdown may be decreased.

Since 1970s, varistors using metal-oxide resistors have been applied to Gapless surge arresters for power system. In the paper, the structure of metal-oxide surge arresters without gaps for 362kV GIS which is developed the first in korea has been introduced. And the main evaluation items for the metal-oxide resistors which are reference voltage test, residual voltage test, long duration current impulse withstand test and operating duty test is tested and evaluated.

In this papers, we proposed the new method in order to diagnosis partial discharge type of transformers. For wavelet transform, Daubechies filter is used, we can obtain wavelet coefficients which is used to extract feature of statistical parameters (maximum value, average value, dispersion, skewness, kurtosis) about high frequency current signal per 3-electrode type (needle-plane electrode, IEC electrode and Void electrode.). Also. these coefficients are used to identify Signal of internal partial discharge in transformer. As a result. from compare of high frequency current signal amplitude and average value. we are obtained results of IEC electrode> Void electrode> Needle-Plane electrode. otherwise. In case of skewness and kurtosis, we are obtained results of Void electrode> IEC electrode > Needle-Plane electrode. As Improved method in order to diagnosis partial discharge type of transformers, we use neural network.

Partial discharges(PD) in air, corona discharges, deteriorate the insulation strength. So, it is necessary to detect PD at an early stage before the system failure and extensive damage to the equipment. PD emit signals which can be detected by applying an capacitive electric field diagnosis. In this paper, We measured signals by capacitive electric field sensor and analyzed FFT from PD, and then compared conventional electric PD detecting method to capacitive electric field diagnosis by $\Psi-q-n$, $\Psi-v-n$, $\Psi-n$, $\Psi-q$ distributions.

In this study, the plasma-assisted $CO_2$ conversion characteristics were investigated in the streamer corona discharge and silent discharge reactors with dielectric of $Al_2O_3$, to improve the conversion efficiency $CO_2$. Some discharge characteristics of $CO_2$ as parameters of gap spacing and applied voltage frequency, in both corona and silent discharge reactor were also obtained. The maximum $CO_2$ conversion rate was 10.1 [%] under the 5.2 [W] of discharge power and 250 [Hz] of applied voltage frequency.

Recently deep interests and attraction have been paid on the generation of ozone, which is widely used to remove bed smell and to clear water. In this paper the silent discharge and ozone generation characteristics of various typed discharge chambers were investigated experimentally. Dielectric of $Al_2O_3$ was embedded in the cylindrical type of discharge chamber to improve the ozone generation rate and to stabilize the silent discharge mode of operation. Discharge current and ozone concentration depend strongly on the applied voltage and frequency.

In this paper, the $CF_4$ decomposition rate and by-product were investigated for a simulated two plasma reactors which are metal particle reactor and spiral wire reactor as function of mixed gases. The $CF_4$ decomposition rate by plasma reactor with metal particle electrode had a gain of 20~25[%] over that by plasma reactor with spiral wire electrode. The $CF_4$ decomposition efficiency increases with increasing applied voltage up to the critical voltage for spark formation. The $CF_4$ decomposition efficiency of metal particle reactor was about 80[%] at AC 24[kV]. The $CF_4$ decomposition rate used $Ar-N_2$ as base gas was the highest among three base gases of $N_2$, $Ar-N_2$, air. The by-products of the $N_2$, $Ar-N_2$ base as were similar, but in case of air base they were different.

In this paper, we made different types of non-thermal plasma reactors such as Metal-particle reactor with $Al_2O_3$ to measure NOx removal characteristic and the dielectric effect for NOx removal. NOx removal rate is not so good when we use just dielectric of $Al_2O_3$ at the Metal-particle reactor, also we just put sludge pellets(100%) without Metal-particle reactor with $Al_2O_3$ and dielectric such as $TiO_2$, $BaTiO_3$ to measure the effect of sludge for NOx removal so that NOx removal rate is almost the same. However NOx removal rate is more than 90% in case of the reactor of composition shape used both dielectric of $Al_2O_3$ and sludge pellets at the same time. In case of the shape of plasma reactor with dielectric, the Metal-particle reactor with $Al_2O_3$, and the metal-particle reactor with both $Al_2O_3$ and dielectric such as $TiO_2$, $BaTiO_3$ at the same time, they are almost the same effect for NOx removal, so we made MNPR(Metal-particle Non-thermal Plasma Reactor with $Al_2O_3$) to reduce these kinds of demerits. Finally, we think MNPR should be much better than other reactors for NOx removal.

In this paper, in order to investigate the catalytic effect of the sludge exhausted from waterworks as heating temperature for NOx removal, we measure NO, $NO_2$ concentration as increasing temperature of sludge pellets and applying high voltage to sludge pellets in a quartz-glass reactor at the same time. NO initial concentration is 100ppm balanced with air gas in a mixing chamber. The gas flow is 5[l/min] and the heating temperature of sludge pellets in a quartz-glass reactor is adjusted from $200[^{\circ}C]$ $400[^{\circ}C]$ to investigate the effect of sludge pellets for removal NOx$(NO+NO_2)$ as increasing temperature. $BaTiO_3$ pellets is filled in a packed-bed reactor for corona discharge to measure how much NOx$(NO+NO_2)$ is removed after generating $NO_2$ from the packed-bed reactor. AC[60Hz] voltage is supplied to the reactor for discharge. In the result, $NO_2$ concentration is decreased by sludge pellets without heating temperature for sludge pellets in case of sludge pellets done heat treatment, however NO concentration is almost the same to be compared NO initial concentration. As increasing heating temperature for sludge pellets, $NO_2$ adsorbed on the sludge surface done heat treatment is converted to NO by the thermal energy, so NO concentration is extremely increased by reduction decomposition of $NO_2$. Finally, We think the sludge is possible to use for reduction catalysts, however we need to study more about the possibility and endurance of sludge as catalysts for NOx removal.

The HFPD measurement method is a technique to analyze aging state of high voltage insulation materials and detect higher frequency signals than conventional PD measurement method therefore it takes less noise effect and could execute active line measurement. It is possible to analyze main discharge phenomena and obtain access to aging progress occurred in insulation materials through accumulation of HFPD signals during determined interval and expression of fractal dimension using statistical process of accumulated signals. In this study, the statistical parameters (skewness & kurtosis) and fractal dimensions are changed by discharge patterns that is shown up different characteristics with applied voltages and times.

In recent year there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. Above all, the advantage of Electrodeless fluorescent lamp is the removal of internal electrodes and heating filaments that are a light-limiting factor of conventional fluorescent lamps. Therefore, the life of Electrodeless fluorescent lamps is substantially higher than that of conventional fluorescent lamps and last up to 100,000 hours. In this paper, the Electromagnetic emitting properties were presented by simulation software operated at 2.65MHz and some specific conditions.

The degree of contamination in outdoor insulation system is one of the most importance factor to determine the level of insulation, and the salt is known as the most dangerous contaminants in the most region of the world. In a macroscopic point of view, as shown through the preceding study, the generation and deposition of salt contaminants has a great relation with the geographical conditions and the meteorological conditions, such as, wind velocity, wind direction, precipitation and so forth. However, in the aspect of microscopic analysis, the pollution mechanism has a great relation with aerodynamic properties of insulator, originated from the profile of insulators, and the non-uniform deposition is unevitable. So, in this investigation, we had make a experiment to seize the electrical properties of non-uniformly contaminated insulator. The results of this investigation could be used as a good groundwork in the determination of outdoor insulation design.

PD phenomena can be regarded as a deterministic dynamical process where PD should be occurred if the local electric field be reached to be sufficiently high. And thus, its mathematical model can be described by either difference equations or differential equations using several state variables obtained from the time sequential measured data of PD signals. These variables can provide rich and complex behavior of detectable time series, for which Chaos theory can be employed. In this respect, a new PD pattern recognition method is proposed and named as 'Chaotic Analysis of Partial Discharges (CAPD)' for this work. For this purpose, six types of specimen are designed and made as the models of the possible defects that may cause sudden failures of the underground power transmission cables under service, and partial discharge signals, generated from those samples, are detected and then analyzed by means of CAPD. Throughout the work, qualitative and quantitative properties related to the PD signals from different defects are analyzed by use of attractor in phase space, information dimensions ($D_0$ and D2), Lyapunov exponents and K-S entropy as well. Based on these results, it could be pointed out that the nature of defect seems to be identified more distinctively when the CAPD is combined with traditional statistical method such as PRPDA. Furthermore, the relationship between PD magnitude and the occurrence timing is investigated with a view to simulating PD phenomena.

We studied electro-optical (EO) performances of a vertical-alignment (VA)-in plane switching (IPS) cell on a photopolymer surfaces. The VA-IPS cell, dark in voltage-off state, reveals bright uniformity in all directions due to the dual domainlike dierector configuration in the voltage-on state. For voltage-transmittance (V-T) measurement, the transmittance characteristics of the VA-IPS cell on the photopolymer surface was better than that of the VA-IPS cell on a polyimide(PI) surface.

The mechanisms of pretilt angle generation for a nematic liquid crystal (NLC) with negative dielectric anisotropy on the blended polyimide (PI) surface containing trifluoromethyl moiety was studied. High LC pretilt angle on the blended polymer surface with F3 was measured and the pretilt angle increased with rubbing strength. However, the low LC pretilt angle on the blended polymer surface with F1 and F2 was measured. The high LC pretilt angle generated is attributable to trifluoromethyl moiety in backbone structure on the blended PI surface. Therefore, the high pretilt angle of NLC can be achieved by using the blended polymer surface.

The electro-optical (EO) performances of a multidomain vertical-alignment (MVA) cell on a homeotropic photopolymer have been investigated. In the absence of an electric field, the MVA cell achieved black state as LC alignment is homeotropic. An electric field created by interdigitated electrodes and rib made after photolithograph using the photopolymer on both substrates causes a director deformation of a multidomain type. Good voltage-transmittance curves for a MVA cell on the homeotropic photopolymer were observed. Also, the stable response time of MVA cell on the homeotropic photopolymer can be achieved.

Electroluminescence(EL) from conjugated polymers has recently received great attention because polymer light-emitting diodes(LEDs) clealy have potential for applications such as large-area displays. The operation of polymer LEDs is based on double injection of electrons and holes from the elextrodes, followed by formation of excitons whose radiative decay results in light emission at wavelength characteristic to the material. In this paper, we fabricated the single layer EL device using $Alq_3$ as emitting material. According as turn on voltage could know about 5.5V in voltage-current characteristics and voltage rise, current could see that increase as non-linear. Current and ruminance can see that express similar relativity in voltage, and could know that ruminance is expressing current relativity.

Organic electroluminesencent device have been studied because of its easy fabrication and high brightness for plate panel display instead of cathode ray tube. There are some device structure for full color filter system can be applicable to the full color application if the blue light organic electroluminesencent device(OELD) is developed. In this study, we fabricated OELD of ITO/CuPc/PBD/LiF/Al using mixed of 500, 600, $700[{\AA}]$ by vacuum method as a emitting layer. We studied the voltage-current, voltage-luminance characteristics and blue light emission of OELD,

The effectiveness of silicon nitride SiNx surface passivation is investigated and quantified. This study adopted single-layer antireflection (SLAR) coating of SiNx for efficiency improvement of solar cell. The silicon nitride films were deposited by means of plasma enhanced chemical vapor deposition (PECVD) in planar coil reactor. The process gases used were pure ammonia and a mixture of silane and helium. The thickness and the refractive index on the films were measured by ellipsometry and chemical bonds were determined by using an FT-IR equipment. This films obtained were analyzed in term of hydrogen content, refractive index for gas flow ratio $(NH_3/SiH_4)$, and efficiency of solar cell. The polycrystalline silicon solar cells passivated by silicon nitride shows efficiency above 12.8%.

Hole injection characteristics have been investigated with various metal anodes such as Ni, Pt, Cu, and AI for the top emission polymer light emitting diodes (PLEDs). Devices were composed of metal anode, Poly(3,4-ethylenedioxythiophene) doped with polystyrene sultponated acid (PEDT:PSS), poly [2-methoxy-5-(2-ethylhexyoxy)-1,4-phenylene-vinylene] (MEH-PPV) and Al cathode. The hole injection from ITO anode has been also investigated for the comparison. The I-V characteristics of the PLEDs with different metal anodes were measured. The work function of the anode is strongly related to the hole injection of the device. The current density of the device with Ni anode with higher work function was higher than that of the device with ITO or AI anode at the same operating voltage.

Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their application as display. One of the problems is red material. It offered a short life and poor emission efficiency to boot. In this study, this problem can be solved by using a multi-layer device structure. Organic electroluminescent devices which are composed of organic thin multi-layer films are fabricated. The basic structure is ITO / Emitting layer / LiP / Al EL device in which Hole transport/Electron blocking PVK layer was blending. We demonstrate the enhancement of eletroluminescence (EL) from blends of poly(3-hexylthiophene) in poly(N-vinylcarvazole). The emitting layer is consisted of a host material(PVK) and a guest emitting material(P3HT). It was showed higher EL intensity and their electro-optical properties were investigated.

A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control' writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm), To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and $0.5{\times}0.5mm^2$ area, respectively, This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolpution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.

We investigated the effect of quinolate metal complex layer as an electron injection layer on the performance of OLEDs and optimized the device efficiency by varying from 0.5 to 10nm thickness of Liq layer. OLED with a structure of indium tin oxide/$\alpha$-napthylphenylbiphenyl(NPB,40nm)/tris-(8-hydroxyquinoline)aluminum(Alq3, 50nm)/Aluminum(150nm) were fabricated in sequence. The device with 1nm Quinolate metal complex layer showed significant enhancement of the device performance.

In this study, It is to synthesize PPV-copolymer and to make polymer electroluminesence device in single layer of ITO/PPV -copolymer/metal. and then it has been realized basic characteristics for display device through analysis and recognized application possibility by luminous material. PPV-copolymer is used spin coating method and electrode is evaporated of vacuum deposition method by changing materials. The result of experiment, The PPV-copolymer used this study emitted blue color, could be discovered a change of emttion characteristic by electrode material.

ITO (Indium Tin Oxide) powder was synthesized by precipitation method. ITO colloidal solutions for coating on glass were fabricated by ball milling method. ITO colloidal solution with variation of concentration from 2% to 15% were fabricated ITO thin film measured sheet resistance and transmittance. In the result, 15% sol showed the lowest value of sheet resistance, 2% sol showed the highest value of transmittance. In addition, effect of annealing temperature and $SiO_2$ film were investigated.

We have fabricated the diffractive optical head(DOH) for optical pick up, which one adaptable to a optical recoding information storage. DOH consists of a focusing grating coupler(FGC) and a solid immersion Jens(SIL). FGC is device that the light converge into a focus by surface lattice. FGC have been studied as a potential application of pick up head for the information storage. In this study, FGC was designed and fabricated to make focus near to possible diffraction limit. We also fabricated recording head combined with SIL. The focus was measured in the range of $1.1{\mu}m$ as near to possible diffraction limit in the FGC having a focusing length of $600{\mu}m$ and a lattice area of 500 * $500{\mu}m$.

We have synthesized novel Diphenoquinone(DQ) derivatives. Electron drift mobility of DQ series was measured and electron affinity$(E_a)$ of them is estimated 3.7~3.9eV by CV. Electron drift mobility$(\mu)$ of electric field dependence by time of flight(TOF) technique is $1.76{\times}10^{-5}cm^2/V{\cdot}s$(DQ5) at the concentration of 10wt% verse poly(4,4'-cyclohexylidene diphenylcarbonate)(Pc-Z) and $1.66{\times}10^6V/cm$.

Some diphenoquinone(DQ) derivatives were synthesized and electron drift mobility of them measured by Time of Flight (TOF) apparatus. Electron drift mobility of DQ series is linearly on increasing electric filed dependent. Drift mobility of ADQ mixture is $1{\times}10^{-6}cm^2/V{\cdot}s$ at $1.1{\mu}m$ thickness and $8.1{\times}10^4V/cm$.

We have synthesized novel stilbenequinone derivatives(ASQ, PSQ) and investigated the properties of their electron drift mobility. Characteristics of the ionization potential Ip and electron affinity Ea of the ASQ were investigated by determining both oxidation and reduction potentials. There were estimated Ip = 7.1 eV and Ea = 3.6 eV. The electron drift mobility of ASQ mixture(R:t-Bu 10wt%) was $1.5{\times}10^{-5}cm^2/V{\cdot}sec$ at $6.15{\times}10^{5}V/cm$ and $1.3{\mu}m$ thickness.

A new phenoquinone with extended $\pi$-conjugate oxadiazole (DQEO) was synthesized. Absorption and photoluminescence of DQEO were appeared 330 nm. 420nm respectively. Electron drift mobility of DQEO were estimated by conventional time-of-flight (TOF) technique.

3,3'-di-benzothiazole-4,4-biphenol(DBTB), 3,3',5,5'-tetra-benzothiazole-4,4'- biphenol(TBTB), 5,5'-methy lene-bis(2-(2'-hydroxyphenyl) benzothiazole derivatives were synthesized by multistep. PL of DBTB and TBTB were dramatically shift 47nm and 75nm respectively longer wavelength than the emission of 2-(2'-hydroxyphenyl)-benzothiazole(HBT) because of intramolecular extened $\pi$-conjugate system but methylene-bis-benzothiazole derivatives do not occur at Wavelength-shift.

1-(9,9-Di-octyl-fluorenyl)-2-substituted-2-cyanvinylene was synthesized and emission feature in solution are presented. Photoluminescence characteristics of 1-(9,9-Di-octyl-fluorenyJ)-2-substituted-2-cyanvinylene are measured by solvents such as carbon tetrachloride, normal hexane, chloroform, ethylaccetate, acetonitrile, methanol. It is shown that depending in the strength of the donor-acceptor internal charge transfer, and emission spectra are more or less red-shifted.

Poly[bis (3,5-di-t-butyl-1,2-phenylene-1,2-thenylene)-1,4-phenylene-bis(11-oxyundecanylphenyl urethane)] (PV-PU) consisting of alternating a confined phenylenevinylene and a nonconjugated urethane segment in the main chain was synthesized by multistep, photoluminescence of PV-PU is emitted in the blue region with a maximum intensity at about 337 nm.

In place of $Alq_3$ for EL, various Zn-Complex with fluorenscent chromophores were synthesized. PL of Zn-Complex substituted with electron donor group at 2 or 4 position occurred to bathochromic shift of emission$(\lambda_{max})$ and PL intensity was weaker than Zn-Complex non-substituted with electron donor group.

This paper presents the reliability of planar InP/InGaAs avalanche photodiodes (APD's) with recess etching, which is very crucial for the commercial 10-Gb/s optical receiver application. A versatile design for the planar InP/InGaAs APD's and bias-temperature tests to evaluate long-term reliability at temperature from 200 to $250^{\circ}C$. The reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. The lifetime of the APD's is estimated by a degradation activation energy. Based on the test results, it is concluded that the planar InP/InGaAs APD's with recess etching shows the sufficient reliability for practical 10-Gb/s optical receivers.

We report the electric properties of organic light emitting diodes (OLEDs) by controlling the carrier density according to the crystalline of copper(II) phthalocyanine(CuPc) and the irradiation light intensity. OLEDs were constructed with indium tin oxaide (ITO)/CuPc/triphenyl-diamin (TPD)/tris-(8-hydroxyquinoline)aluminum (Alq3)/Al. The transport properties of OLEDs were changedby the heat-treatments of CuPc. The irradiation of red and blue light exciting CuPc, TPD and Alq3. And then we observed the carrier density of OLEDs.

ZnO thin films on (100)p-type silicon substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YGA laser with a wavelength of 266nm. The influence of the deposition parameters, such as oxygen pressure, substrate temperature and laser energy density variation on the properties of the grown film, was studied. The experiments were performed for substrate temperatures in the range of $200{\sim}500^{\circ}C$ and oxygen pressure in the range of $10^{-2}{\sim}10^2mTorr$. We investigated the structural, morphological and optical properties of ZnO thin films using X-ray diffraction(XRD), atomic force microscopy(AFM), photoluminescence(PL).

In this study, we fabricated red organic electrolu-minescent device with a doping material (DCJTB), and The cell structure used ITO:indium tin oxide $[20{\Omega}]$/CuPc:Hole injection layer 20nm/NPB: Hole transfer layer 40nm/$Alq_3$ (host) + DCJTB(1% or 3%) (guest) Emitting layer 40nm/$Alq_3$ : Electron transfer layer 30nm/Al :Cathode layer 150nm. the luminescent layer consisted of a host material. 8-hydrozyquinoline aluminum $(Alq_3)$, and DCJTB dye as the dopant. a stable red emission (chromaticity coordinates : x=0.64, y=0.36) was obtained in this cell with the luminance range of $100-600cd/m^2$. we study the electrical and optical properties of devices.

We have investigated the effects of cathode in organic light-emitting diodes of ITO/TPD/$Alq_3$/Cathodes(Al, LiF/Al, Ca/Al, and LiAl) by measuring current-voltage-luminance characteristics. The device with cathodes other than Al cathode shows the efficiency by an oder of one compared with Al cathode only. This improvement is due to a reduction of barrier height in cathode side.

We have carried out two-beam interference experiments to form holographic gratings on amorphous $MgF_2$/As-Ge-Se-S multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm). under different polarization combinations. The diffraction efficiency was obtained by +1st order intensity. The maximum diffraction efficiency of As-Ge-Se-S single layer and $MgF_2$/As-Ge-Se-S multi-layer were 0.8% and 1.4%

In this study, We fabricated Organic Electroluminescence device, in order to improve the efficiency of Blue OLED in the full-color OLED. We made two sample. Sample A is that We used TPD(N,N‘-bis(3-methylphenyl)-N,N'-diphenylbenzidine} as hole transport layer(HTL), and Butyl-PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole) as emitting material layer(EML) and Alq3(8-Hydroxyquinoline, aluminum} as electron transport layer(ETL). Sample B is that we used TPD(N, N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine} as HTL and co-evaporated Butyl-PBD and Alq3 as EML. We investigated the characteristic of brightness and current-:voltage. The sample B that co-evaporated Butyl-PBD and Alq3 as EML improved characteristic of brightness and current-voltage than sample A. Maximum luminescence of sample B is $310cd/m^2$ and threshold voltage is 7V.

This paper presents metal structure that is fabricated using UV-LIGA process with PMER N-CA3000. In order to fabricate metal structure with high aspect ratio, the systematic optimization method was adopted and then the structure of $36{\mu}m$ thick mold with aspect ratio 7:1 (trench) and $32{\mu}m$ thick nickel structure was obtained. This structure is applied to the fabrication of optical switch.

High temperature Kermal diffusion from $POCl_3$ source usually used for conventional process through put of a cell manufacturing line and potentially reduce cell efficiency through bulk like time degradation. To fabricate high efficiency solar cells with minimal thermal processing, spin-on-doping(SOD) technique can be employed to emitter diffusion of a silicon solar cell. A technique is presented to emitter doping of a mono-crystalline solar cell using spin-on doping (SOD). Moreover it is shown that the sheet resistance variation with RTA temperature and time fer mono-crystalline and multi-crystalline silicon samples. This novel SOD technique was successfully used to produces 11.3% efficiency l04mm by 104mm size mono-crystalline silicon solar cells.

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at $300^{\circ}C$ in oxygen ambient pressure. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. Also, the optical and structural properties changed by Si layer in ZnO thin film. The optical and structural properties of Si-doped ZnO thin films were characterized by PL(Photoluminescence) and XRD(X-ray diffraction method) respectively. Electrical properties were measured by van der Pauw Hall measurements.

Spherical and dense BAM phosphor particles were prepared by spray pyrolysis. The key idea of dense BAM particles is to lead gelation in droplets, which was successfully achieved by using the aluminum polycation as the precursor solution for the spray pyrolysis. The BAM phosphor particles prepared by spraying the aluminum polycation solution have completely spherical shape and dense structure. When directly applied to make phosphor film on the glass by the screen-printing method, the prepared spherical BAM phosphor particles showed better packing density and surface morphology than that of commercial one, which has irregular shape and large particle size. It was also found that the thermal degradation in the photoluminescence intensity for dense and spherical BAM particles was less than that of commercial one.

An equivalent circuit for the superconductor flux flow transistor(SFFT) was combined with high temperature cooling device, based on the analogy between thermal and electrical variables using the high-temperature superconductor(HTS), is proposed. The device is composed of parallel weak links with a nearby magnetic control line. A model has been developed that is based on solving the equation of motion of Abrikosov vortices subject to Lorentz viscous and pinning forces as well as magnetic surface barriers. The use of thermal models the global performance of thermal cooling circuit and signal system to be checked by using electrical circuit analysis programs such as SPICE.

We have examined the impedance characteristics and the battery characteristics of PLI bicell. As results, the impedance of PLI bicell with 62 wt% cathode active material were lower than the other cathode active material content. And the specific resistances of PLI bicell increased with N/P ratio until 1.85. And the impedance of PLI bicell decreased with increased adding amounts of binder. But the rate capability of PLI bicell were not increased with increased adding amounts of binder. PLI bicell with 9.9 wt% binder content were the best rate capability. but the cycleability were not the same results as the rate capability. PLI bicells with cathode with more than 11 wt% binder, their cycleability were almost same, nevertheless they were better cycleability than 9.9 wt% binderl content.

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure$(PO_3)$ in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}Torr$. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$: and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

This paper presents a result of sound transmitting system with power line communication technique, Sound transmitting system is a transmitter which transmits modulated audio signal to power to power line and receiver which is capable of detesting it with earphone or speaker. It has been evaluated with the frequency characteristics and spectrum analysis. And, from the result of evaluation on the developed system, we confirm the superior sound transmitting characteristics, and the possibility of application on a language laboratory.

In this paper, we have studied with regard to the use of lasers for modifying the surface properties of silicon in order to improve it's wettability and adhesion characteristics. Using an Nd:YAG pulse laser, the wettability and adhesion characteristics of silicon surface have been developed by an Nd:YAG pulse laser. It was found that the laser treatment of silicon surfaces modified the surface energy. In the result of wetting experiments, by the sessile drop technique using the distilled water, wetting characteristic of silicon after the laser irradiation shows a decreased value of the contact angle. In case of the laser treated silicon surface, laser direct writing of copper lines has been achieved by pyrolytic decomposition of copper formate films$(Cu(HCOO)_2{\cdot}4H_2Q)$, using a focused $Ar^+$ laser beam$(\lambda=514.5nm)$ on the silicon substrates. The deposited patterns were measured by energy dispersive X-ray(EDX), Scanning Electron Microscopy(SEM) and surface profiler($\alpha$-step) to examine the cross section of deposited copper lines and linewidth.

The guard-ring type 3-terminal parallel plate electrodes proposed by ASTM D 150-81 and IEC 250 have been widely used for measurement of dielectric constants of solid dielectrics. However the method using this electrodes causes many uncertainty associated with the measurement errors of the diameter of the guarded electrode. the gap between guarded and guard-ring electrode. the distance of two active electrodes(the thickness of specimen), the roughness and contamination of surface of electrode and specimen. close adherence grade of electrode and specimen. In this paper. a new electrode system of cross capacitance type based on Thompson-Lampard theorem is designed and is employed for the measurement of dielectric constant. The results of simulation of guard-ring electrode and cross capacitance electrode using FEM program show that distance measurement between two electrodes in guard-ring electrode produces large uncertainty. on the other hand this effect in cross capacitance electrode is negligible. Furthermore. the air gap effects in the cross capacitance electrode is 5.6 times less sensitive than that in guard-ring electrode by assuming air gap of $50{\mu}m$.

This paper introduces that domestic animals can be effectively administered with an individual recognition system. The system was constructed in original code transmitter, receiver, personal computer, micro-processor, and RS485 telecommunications module. In the individual recognition system. the signal including encoded information about a milk-cow was transmitted from an original code transmitter to a micro-processor through RS485 telecommunications module. The transmitted signal was successfully displayed in a personal computer.

In this paper, a novel multi voltage inverter system is proposed for reductions of harmonics, which can compensate reactive power. At first, we remove capacitor at input side for reactive power compensation. Secondly, by adding DC voltage to the filter capacitor, it can control power factors as lead-phase according to alterations of loads at power reception. Thirdly, if winding and single phase-bridge inverter(auxiliary circuit) is installed to DC power for reduction of harmonic, waveform of output voltages become to 36-steps. Thus, SVC(static var compensator) systems which can reduce harmonics are designed.

For detecting of Faulty Insulator, a new Lateral Information Propagation Networks (LIPN) has been proposed. Energized insulator is reduced the rate of insulation extremely, and taken the results dirty and injured. It is necessary to be actions that detect the faulty insulator and exchange the new one. And thus, we have designed the LIPN to be detected that insulators by the real time computation method through the inter-node diffusion. In the network, a node corresponds to a state in the quantized input space. Each node is composed of a processing unit and fixed weights from its neighbor nodes as well as its input terminal. Information propagates among neighbor nodes laterally and inter-node interpolation is achieved. Through several simulation experiments,real time reconstruction of the nonlinear image information is processed.

This paper presents SVC which use PAM method and eliminate harmonics. Inverter is connected directly so that SVC improve output voltage waveform into 24 steps. Inverter output waveform THD is reduced to 6.89%. Leading control of reactive power generated in power system is possible. Snubber is added to reduce switching loss.

An easy elevator originated is an opened system to compare an existing equipment, and learning efficient is high as a wiring that the sequence control circuit is on and off. The structure of an equipment to be controled from the first floor to the fifth floor is constructed by a lamp to express the function of the open-close of the door according to the cage moving, to express the mechanical actuation of the forward-reverse break and motor of load and of hand-worked control component of Push-Button S/W, L/S and Relay. In order to act of the elevator function that these components connected, designed the auto program and the sequence control circuit. Consequently the process that these(1~5steps) operated the cage with an auto program of the elevator and the sequence control circuit is controled by the step of forward and reverse that the L/S1~L/S5 of sensor adjust function let posit, by the adjustable S/W1~S/W5 of PLC testing panel and the S/W1~S/W5 which installed on the transparent acryl plate of a frame. In here, improved apparatus is the learning equipment of combined use to study the principle and the technique of the originated sequence control circuit and the auto program of PLC.

Mesoporous silica, MCM-41, was synthesized by sol-gel method. The organic structure-directing agent must be removed to make the desired proes. To achieve this, alternative calcination method using microwave oven was adapted to this removal stage. Microwave calcination was shown to provide a novel, rapid and inexpensive method of praparing nanoporous material. It was studied how the porous structure, surface area and pore size distribution were changes under microwave calcination.

Using thermal hydrolysis and hydrothermal treatment, photocatalytic $TiO_2$ powders were synthesized. During the synthesis, the addition of other transition metals such as iron, copper, etc., affected the photocatalytic capability of synthesized powders, and enabled the activation by visible light. To enhance photocatalytic capacity of gas phase decomposition, the rate-determining adsorption rate of pollutant gases were improved via surface modification of $TiO_2$ powders. The surface modifiers were implanted using mechanochemical synthesis of dopants and photocatalytic powders.

Currently, the regulation system on controlling EMI has been strengthened throughout the world and this system has emerged as another invisible barrier from the advanced countries. Such a regulation is likely to expand in many various ways depending on the objective and type, and there has to be a fundamental EMI measure to respond this movement. This study is aimed at learning the EMI technology of communication system through the shielding material. It introduces the selection of appropriate shielding material and method of use, and it introduces the cases that resolved the actual EMI problem of the system that is manufactured by the company.

Electrochemical capacitor made with metal oxide electrode uses rapid and reversible protonation/deprotonation of metal oxide material under the aqueous acidic solution, generally. Electrochemical stability window of aqueous electrolyte-type capacitor is narrow compared to that of organic electrolyte-type capacitor. Electrochemical characteristics of electrochemical capacitor made with metal oxide electrode and lithium cation based organic electrolyte were evaluated. Electrochemical capacitor based on $RuO_2$ electrode material and 1M $LiPF_6$ in mixed solvents of EC, DEC, and EMC has anodic and cathodic specific capacitance of 145 and 142 F/g-$RuO_2{\cdot}nH_2O$, respectively, by using cyclic voltammetry with scan rate of 2 mV/sec g-$RuO_2$ in potential range of 2.0~4.2V(Li|$Li^+$).

Zinc Air battery obtain their energy density advantage over the other batteries by utilizing ambient oxygen as the cathode materials, and reusing cathode as recycled form. And specific capacity of zinc powder is as high as 820mAh/g. When Zinc Air battery discharged by low rate current discharge voltage profile has very flat pattern until end of voltage. But, when Zinc Air battery discharged by high rate current discharge voltage and capacity become lower. Therefore, we focused on effects of catalyst size in cathode. So we examined performance of zinc air batteries, average discharge voltage, capacity, energy, resistance. And we also obtained resistance by the GSM pulse discharge. So we have got optimum size of catalyst for Zinc Air battery.

In this paper, we propose a phase-locked loop (PLL) with dual loops in which advantages of both loops can be combined. Frequency-locked loop (FLL) which is composed of two frequency-to-voltage converters (FVC) and an amplifier makes the frequency synchronize very fast and output signal is synchronized in phase with the input reference signal by charge pump PLL. This structure can improve the trade-off between acquisition behavior and locked behavior.

The circular cavity resonator which can measure the dielectric properties of dielectrics in the Ka-band(26.5GHz~40GHz) frequency range was designed and fabricated. A structure of the resonator is divided into two equal parts of the length and the dielectric plate sample is placed between two halves. Exciting and detecting of the resonator is performed by WR28 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample, whose permittivity is known to be 13 in millimeter wave range, was used for the verification of the performance of the fabricated circular cavity resonator. In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant $TE_{011}$ mode, the permittivity and $Q{\times}f_0$ were measured as 26.69GHz, 12.9 and 124,000GHz, respectively.

This work describes the effect of conducting composite on the characteristics of electric double layer capacitor. The cell, which was fabricated with conducting composite consisted of 50 wt.% of SPB and 50 wt.% of VGCF, exhibits the higher specific capacitance, the lower resistance and the better rate capability than those of the cells fabricated with each single electronic conductor. These enhanced properties could be related with the dense structure of electrode.

Ferroelectric $Sr_xBa_{1-x}Nb_2O_6(0.25{\leq}x{\leq}0.75)$ thin films were prepared by the Ion Beam Sputtering method. Deposit onto Pt/Ti/$SiO_2$/Si(100) substrates. The deposited thin films were heat-treated for crystallization. Microstructure and crystallization behavior were examined using FE-SEM, XRD. Ferroelectric hysteresis were measured. The measured remanent polarization and coercive field values were $38{\mu}C/cm^2$ and 120kV/cm, respectively.

Dielectric ceramics with nominal composition of $(Ba_{0.93}Sr_{0.07}O)-0.5Sm_2O_3-4.5TiO_2$ was prepared using the conventional mixed oxide process-derived powder. Effect of $SiO_2$, $MnO_2$ and $Al_2O_3$ impurity addition on the microwave properties was examined in some detail. Measured relative permittivity $(\varepsilon_r)$ values were in the range of 53 to 59 and showed little dependence on impurity addition. In contrast, quality factor $(Q{\cdot}f)$ and temperature coefficient of resonant frequency $(\tau_f)$ values were greatly influenced by the type and the amount of impurities. It was found that 0.1~0.2wt% addition of $Al_2O_3$ was most effective for improving the properties, where ${\varepsilon}_r$, $Q{\cdot}f$ and $\tau_f$ values were 57.7, 10000, and +7ppm/$^{\circ}C$, respectively.