In this paper, the white organic light-emitting diode(OLED)was fabricated using the DPVBi of blue emitting material and a rubrene of orange color of fluorescent dye by vacuum evaporation processes. The device structure of OLED was Glass/ITO/2T-NATA(15nm)/NPB(3nm)/DPVBi(3nm)/DPVBi rubrene[2%](10nm)/DPVBi(25nm)/$Alq_3$ or New-ETL(60nm) /LiF(0.5nm)/ Al(100nm). The device with the $Alq_3$, layer shows orange color, and the luminance of 1000cd/$m^2$ at an applied voltage of 10.4V. On the other hand, the New-En layer results in white color, CIE coordinates of (0.327, 0.323), and the lowered driving voltage of 5V for achieving the same luminance value.

We have studied an organic layer-thickness dependent electrical and optical properties of organic light-emitting diodes in a device structure of ITO/TPD/$Alq_3$/LiF/Al. While a hole-transport layer thickness of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm. A ratio of those two layers was kept to about 2:3. Variation of the layer thickness changes a traverse time of injected carriers across the organic layer, so that it may affect on the chance of probability of exciton formation. Current-voltage-luminance characteristics of the devices show that there are typical rectifying behaviors, and the luminance reaches about $30,000cd/m^2$. Thickness-dependent current efficiency shows that there is a gradual increase of the efficiency as the total layer thickness increases. The efficiency becomes saturated to be about 10cd/A when the total thickness is above 140nm. They show that emission was from the $Alq_3$ layer, because the peak wavelength is about 525nm. View angle-dependent emission spectra show that the emission intensity decreases as the angle increases.

New spiro-type host materials, 5'-phenylnaphthyl-spiro[fluorene-7,9'-benzofluorene](BH-lPN) and 5',6-bis(phenylnaphthyl)-spiro[fluorene-7,9'-benzofluorene](BH-6PN) were designed and successfully prepared by the Suzki reaction. The EL characteristics of BH-1PN as blue host material doped with blue dopant materials, BD-1 were evaluated and compared with the existing host MADN:dopant BD-1 system. The structure of the device is ITO/DNTPD/NPB/Host:5% dopant/Alq3/Al-LiF. The device obtained from BH-lPN doped with BD-1 showed a good color purity and efficiency, on the other hand luminance and current-density characteristics are worse than that of MADN doped with BD-1.

The structure of OLEDs with conventional heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. NPB used as a hole transport layer and DPVBi used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts device's stability. Mixing of the hole transport layerand the emitting layer removes abrupt interface between the hole transport. layer and the electron transport layer. The stability of OLED with graded mixed-layer developed in this study was improved.

We have fabricated and evaluated new high efficiency green light emitting phosphorescent devices with an emission layer of $[TCTA_{1/3}TAZ_{2/3}/TAZ]:Ir(ppy)_3$. The whole experimental devices have the basic structure of $2-TNATA(500 {\AA})/NPB(300{\AA})/EML(300{\AA})/BCP(50{\AA})/SFC137(500{\AA})$ between anode and cathode. We have also fabricated conventional phosphorescent devices with emission layers of $(TCTA_{1/3}TAZ_{2/3}):Ir(ppy)_3$ and $(TCTA/TAZ):Ir(ppy)_3$ and compared their electroluminescence characteristics with those of the device with an emission layer of $(TCTA/TCTA_{1/3}TAZ_{2/3}/TAZ):Ir(ppy)_3$. The current density(J), luminance(L), and current efficiency($\eta$) of the device with an emission layer of $(80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ):10%-Ir(ppy)_3$ were 95 $mA/cm^2$, 25000 $cd/m^2$, and 27 cd/A at an applied voltage of 10V, respectively. The maximum current efficiency was 52 cd/A under the luminance of 400 $cd/m^2$. The peak wavelength and FWHM(full width at half maximum) in the electroluminescence spectral were 513nm and 65nm, respectively. The color coordinate was (0.30, 0.62) on the CIE (Commission Internationale de l'Eclairage) chart. Under the luminance of 15000 $cd/m^2$, the current efficiency of the device with an emission layer of $(80{\AA}-TCTA/90{\AA}-TCTA_{1/3}TAZ_{2/3}/130{\AA}-TAZ):10%-Ir(ppy)_3$ was 34 cd/A, which has been improved 1.7 times and 1.4 limes compared to those of the devices with emission layers of $(300{\AA}-TCTA_{1/3}TAZ_{2/3}): 10%-Ir(ppy)_3$ and $(100{\AA}-TCTA/200{\AA}-TAZ):10%-Ir(ppy)_3$, respectively.

Organic light-emitting device (OLED) have become very attractive due to their potential application in flat panel displays. One important problem to be solved for practical application of full-color OLED is development of three primary color (Red, Green and Blue) emitting molecule with high luminous operation. Particularly, the development of organic materials for blue electroluminescence (EL) lags significantly behind that for the other two primary colors. For this reason, Flu-Si was synthesized and characterized by means of high-resolution mass spectro metry and elemental analyses. Flu-Si has the more wide optical band gap (Eg = 3.86) than reference material (Cz-Si, Eg = 3.52 eV). We measured the photophysical and electrochemical properties of Flu-Si. The HOMO-LUMO levels were estimated by the oxidation potential and the onset of the UV-Vis absorption spectra. The EL properties were studied by the device fabricated as a blue light emitting material with FIrpic.

In this paper, we have developed Organic light-emitting devices(OLEDs) using various thicknesses of new electron transport layer. The device structure of ITO/ 2-TNATA(15nm)/ DPVBi(40nm)/ New ETL(20nm,60nm,100nm)/ LiF(0.5nm)/Al(100nm) has been used. The operating voltage of the device was almost independent of the new ETL thickness, due to its high electron conducting property. For example, the operating voltages of the devices with 20nm and 60nm layers are almost 5V at a current density $200mA/cm^2$. The device with the new ETL shows the low turn-on of 2.5V.

We have examined post-annealing and passivation for the transparent bottom gate IGZO TFT having an inverse co-planar structure. The oxygen-vacuum two step annealing enhanced the field effect mobility up to 18 $cm^2$/Vsandthesub-threshold swing down to 0.2V/dec. However, the hysterysis and the bias stability problems could not be solved just by post-annealing. Thus, we have passivated the bottom gate IGZO TFTs with organic and inorganic materials. $Ga_2O_3$, $Al_2O_3$, $SiO_2$ and some polymer materials were effective materials for passivations. The hysterysis and the stability of the TFTs were remarkably improved by the passivations. We have manufactured the AMOLED panel with the transparent bottom gate IGZO TFT array successfully.

In general, polyimides (PIs) are used in alignment layers in liquid crystal displays (LCDs). The rubbing alignment technique has been widely used to align the LC molecules on the PI layer. Although this method is suitable for mass production of LCDs because of its simple process and high productivity, it has certain limitations. A rubbed PI surface includes debris left by the cloth, and the generation of electrostatic charges during the rubbing induces local defects, streaks, and a grating-like wavy surface due to nonuniform microgrooves that degrade the display resolution of computer displays and digital television. Additional washing and drying to remove the debris, and overwriting for multi-domain formation to improve the electro-optical characteristics such as the wide viewing angle, reduce the cost-effectiveness of the process. Therefore, an alternative to non-rubbing techniques without changing the LC alignment layer (i.e, PI) is proposed. The surface of LC alignment layers as a function of the ion beam (IE) energy was modified. Various pretilt angles were created on the IB-irradiated PI surfaces. After IB irradiation, the Ar ions did not change the morphology of the PI surface, indicating that the pretilt angle was not due to microgrooves. To verify the compositional behavior for the LC alignment, the chemical bonding states of the ill-irradiated PI surfaces were analyzed in detail by XPS. The chemical structure analysis showed that ability of LCs to align was due to the preferential orientation of the carbon network, which was caused by the breaking of C=O double bonds in the imide ring, parallel to the incident 18 direction. The potential of non-rubbing technology for fabricating display devices was further conformed by achieving the superior electro-optical characteristics, compared to rubbed PI.

Considerable attention has been focused on the applications of flexible liquid crystal (LC)-based displays because of their many potential advantages, such as portability, durability, light weight, thin packaging, flexibility, and low power consumption. To develop flexible LCDs that are capable of delivering high-quality moving images, like conventional glass-substrate LCDs, the LC device structure must have a stable alignment layer of LC molecules, concurrently support uniform cell gaps, and tightly bind two flexible substrates under external tension. However, stable LC molecular alignment has not been achieved because of the layerless LC alignment, and consequently high-quality images cannot be guaranteed. To solve these critical problems, we have proposed a PDMS pixel-wall based bonding method via the IB irradiation was developed for fasten the two substrates together strongly and maintain uniform cell gaps. The effect of the IB irradiation on PDMS with PI surface was also evaluated by side structure configuration and a result of x-ray photoelectron spectroscopic analysis of PDMS interlayer as a function of binder with substrates. large number of PDMS pixel-walls are tightly fastened to the surface of each flexible substrate and could maintain a constant cell gap between the LC molecules without using any other epoxy or polymer. To enhance the electro-optical performance of the LC device, we applied an alignment method that creates pretilt angle on the PI surface via ion beam irradiation. Using this approach, our flexible LCDs have a contrast ratio of 132:1 and a response time of about 15 ms, resulting in highly reliable electro-optical performance in the bent state, comparable to that of glass-substrate LCDs.

Recently, it is widely studied to liquid crystal (LC) alignment using ion-beam exposure. Because conventional rubbing method has some problems such as defects from dust and electrostatic charges and rubbing scratch during rubbing process. Moreover rubbing method needs cleaning process to remove these defects. Therefore rubbing-free techniques like ion-beam method are strongly required. We studied LC alignment by controlling ion-beam irradiation angles and electro-optical (EO) characteristics of twisted nematic LC on the polyimide surface. In this experiment, a good uniform alignment of the nematic liquid crystal (NLC) with the ion-beam exposure on the polyimide (PI) surface was observed. We also achieved low pretilt angle as function of ion-beam irradiation angles. X-ray photoelectron spectroscopic (XPS) analysis provided chemical evidence for LC alignment by controlling ion-beam irradiation angles. In addition, it can be achieved the good EO properties of the ion-beam-aligned twisted nematic liquid crystal display (TN-LCD) on PI surface. Some other experiments results and discussion will be included in the presentation.

To date, rubbing has been widely used to align LC molecules uniformly. Although rubbing can be simple, it has fundamental problems such as the generation of defects by dust and static electricity, and difficulty in achieving a uniform LC alignment on a large substrate. Therefore, non contact alignment has been investigated. Ion beam induced alignment method, which provides controllability, nonstop process, and high resolution display. In this study, we investigated liquid crystal (LC) alignment with ion beam (IB) that non contact alignment technique on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide under various ion beam angles. In this experiment, Polyimide layer was coated on glass by spin-coating and Voltage-transmittance(VT) and response time characteristics of the TN cell were measured by a LCD evaluation system. The good characteristics of the nematic liquid crystal (NLC) alignment with the ion beam exposure polyimide surface was observed. The tilt angle of NLC on the PI surface with ion beam exposure can be measured under $1^{\circ}$ for all of irradiation angles. In addition, it can be achieved the good EO properties, and residual DC property of the ion beam aligned TN cell on polyimide surface.

The conventional biased vertical alignment (BVA) mode has several advantages such as rubbing- and protrusion-free, wide-viewing angle and stable LC dynamics against external pressure. However manufacturing process of BVA mode is difficult task because the pixel and bias electrode signal are different in each frame. To solve this problem, we investigated the pattern free vertical alignment (PFVA) by using the UV-curable reactive mesogen (RM), in which the LC molecules were made to be pre-tilted. Eventually transmittance and response time in PFVA mode were found to be improved as compared to BVA mode.

본 연구는 제작된 OLED 소자에 UV의 조사시간에 따른 PL intensity 의 감소와 UV power에 따른 PL degradation 변화에 따라 적절한 UV의 조사조건을 찾아 OLEO 소자의 사진이미지를 구현하고자 하였다. 이러한 조건들로부터 얻어진 OLED 소자의 사진이미지 구현을 통하여 그동안 문제점으로만 여겨졌던 UV에 의한 PL degradation 현상이 문제점만이 아닌 다른 하나의 장점으로 발전되어 다른 분야에서 적용될 수 있다고 기대해본다.

OCB mode has advantages such as fast response time and wide viewing angle. But it has inevitable shortcoming which initial splay state must be changed to bend state. To overcoming this problem, OCB cell filled LC with RM monomer was cured by UV when voltage applied. Through previously mentioned methods, even if electric field is none, bend state was made by stabilized LC director. In this paper, we investigated the electric characteristics of polymer stabilized OCB mode.

A single gap transflective liquid crystal display(LCD) driven by fringe electric field in the transmissive(T) region and vertical electric field in the reflective(R) region was designed. Because the pretilt angle is formed in $53^{\circ}$ through polymerization of an UV curable reactive mesogen(RM) monomer at the surface, the effective cell retardation $(d{\Delta}n_{eff})$ value of the R region becomes half of that in the T region where the LCs are homogenously aligned. Consequently, a transflective display driven by a vertical and fringe electric field with a single cell gap and single gamma curves is realized.

We have studied electro-optic characteristics as a function of passivation thickness$(t_p)$ in the fringe-field swiching (FFS) mode using the LC with positive dielectric anisotropy. When $t_p$ is increased from $0.29{\mu}m$ to $3.0{\mu}m$, a maximum transmittance is slightly increased to $2{\mu}m$. However, operating voltage is continuously increased up to above 11v. We found that the tilt angle is decreased between the edge of pixel electrode and the center of each pixel electrode. In the FFS mode using the liquid crystal with positive dielectric anisotropy, transmittance is affected by the tilt angle. When tilt angle is increased, transmittance become decrease. Therefore, in the FFS device, a low tilt angle is favored for high transmittance. It is demonstrated that the suitable passivation thickness make a tilt angle decreased.

The photo leakage currents of a conventional hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) were investigated and analyzed in the case of illumination from various lightsources such as halogen lamp, cold cathode fluorescent lamp(CCFL) backlight, and white light emitting diode(LED) backlight The photo leakage characteristics showed the apparent differences in the leakage level and in the $I_{on}/I_{off}$ ratio in spite of the similar luminances of light sources. This leakage level is expected to be related to the wavelength of the lowest intensity peak from spectral analysis of light sources.

Microcrystalline (${\mu}c$) silicon thin films were prepared on glass by plasma-enhanced-chemical-vapor-deposition (PECVD) at various substrate temperature, and dilution ratio of $H_2$ with $SiH_4$. The structural and optical properties of. the ${\mu}c-Si$ thin films were investigated using XRD and UV-VIS spectrophotometer. The ${\mu}c-Si$ thin film with 42 nm grain size was grown at optimal condition of 2.5 Torr, spacing between electrodes of 3cm, deposition time of 3000s, RF power of 200W, substrate temperature of $350^{\circ}C$, $SiH_4$ ($20%SiH_4$+80%He) of 50sccm, and $H_2$ of 100sccm.

In this paper, we have investigated the sintering of the organometallic silver electronic ink. We have changed the sintering temperature from 100 to $300^{\circ}C$ in the various atmospheres. The sheet resistance was abruptly changed at the temperature range between 115 and $120^{\circ}C$, due to the f of the crystalline silver resulting from the dissociation of Ag complex, which phenomenon has been confirmed by X-ray diffraction. The grain sizes of Ag films were about 50nm and 70nm at the sintering temperatures of 115 and $150^{\circ}C$, respectively.

최근 유가 상승의 영향으로 많은 연구자들의 관심이 풍부하고 무한한 태양에너지의 활용에 많은 관심이 쏟아지고 있다. 하지만 현재 상용화된 실리콘 태양전지는 실리콘의 정제 및 제조 단가가 생산 비용에 많은 부분을 차지하여 시장진입에 어려움을 겪고 있다 또한 실리콘의 생산과 가공이 반도체나 디스플레이 분야에서도 반드시 필요하기 때문에 그에 따른 생산량이 전체 소비를 따라 가지 못하여 나타나는 공급 부족 현상도 상당 기간 지속 되었다. 이러한 상황에서 실리콘을 대처할만한 태양전지의 개발과 함께 휴대성이 뛰어난 태양전지의 개발이 많은 관심을 끌고 있다. 본 연구에서는 기존의 유기 태양전지에 CNT를 혼합한 유무기 하이브리드 태양전지를 제조하고 그에 따른 광학적 특성과 전기적 특성을 살펴보았다.

Electrokinetic motion of fullerene ($C_{60}$) particles in liquid crystal (LC) medium under an in-plane electric field has been studied for the application to the electronic paper display. Fullerenes move in the direction of applied electric field due to interaction between the induced dipole moment on $C_{60}$ and external electric field at lower threshold voltages compared to other devices such as QR-LPD (Quick Response Liquid Powder Display) and TBD (Twisting Ball Display). We also confirmed the bistability of fullerene particles in LC medium and the results showed that the 87% and 81% of original reflectance or transmittance of image was retained after 24 hours and 48 hours respectively. Our studies show the possibility that fullerenes can be used for electronic paper display.

The realization and origin of p-type ZnO are main issue for photoelectronic devices based on ZnO material. N-doped and nominally undoped p-type ZnO films were achieved on silicon (100) and homo-buffer layers by RF magnetron sputtering and post in-situ annealing. The undoped film shows high hole mobility of 1201 $cm^2V^{-1}s^{-1}$ and low resistivity of $0.0454\Omega{\cdot}cm$ with hole concentration of $1.145\times10^{17}cm^{-3}$. The photoluminescence(PL) spectra show the emissions related to FE, DAP and defects of $V_{Zn}$, $V_O$, $Zn_O$, $O_i$ and $O_{Zn}$.

A simple bi-layer structure of organic light emitting diode (OLED) was used to study the characteristics of anode preparation. Indium tin oxide (ITO) anode surface treatment of OLEDs was performed to get the optimum condition for the ITO anode. The ITO surface was treated by $O_2$ or $O_2$ / Ar mixed gas plasma with different processing time. The electrical characteristics of OLED were improved by plasma treatment. The operating voltage of OLED with $O_2$ or $O_2$/Ar mixed gas plasma treated anodes decreases from 8.2 to 3.4 V and 3.2V, respectively. The $O_2$ /Ar mixed gas plasma treatment results in better electrical property.