High-Speed, High-Reliability Planar-Structure InP/InGaAs Avalanche Photodiodes for 10Gb/s Optical Receivers with Recess Etching

수광영역의 식각을 통한 단일확산 공정의 고속 평판형 InP/InGaAs 10Gb/s 광 검출기의 신뢰성

This paper presents the reliability of planar InP/InGaAs avalanche photodiodes (APD's) with recess etching, which is very crucial for the commercial 10-Gb/s optical receiver application. A versatile design for the planar InP/InGaAs APD's and bias-temperature tests to evaluate long-term reliability at temperature from 200 to $250^{\circ}C$. The reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. The lifetime of the APD's is estimated by a degradation activation energy. Based on the test results, it is concluded that the planar InP/InGaAs APD's with recess etching shows the sufficient reliability for practical 10-Gb/s optical receivers.