Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.07b
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- Pages.735-738
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- 2002
Crystal Growth of 3C-SiC Using HMDS Gas Source
HMDS 가스원을 이용한 3C-SiC의 결정성장
- Sun, Ju-Hun ;
- Chung, Yun-Sik ;
-
Chung, Gwiy-Sang
;
- Nishino, Shigehiro (Dpt of Electro. & Infor. Sci., Kyoto Institute of Technology)
- Published : 2002.07.08
Abstract
Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) substrate up to a thickness of