Abstract
$Cu_2ZnSnS_4$ (CZTS) thin film is one of the candidate materials for the solar cell. It has an excellent optical absorption coefficient as well as appropriate 1.4~1.5eV band gap. The purpose of this study is replacing a half of high-cost Indium(In) atoms with low-cost Zinc(Zn) atoms and the other half with low-cost Tin(Sn) atoms in the lattice of CIS. In annealing process of thin films deposited with mixture target, the thin films were appeared the peeling. The resistivity was decreased. Thin films were deposited on ITO glass substrates using a compound target which were made by $CU_2S$, ZnS, $SnS_2$ powder were sintered in the atmosphere of Al at room temperature by rf magnetron sputtering We investigated potentialities of a low-cost material for the solar cell by measuring of thin film composition, the structure and optical properties. We could get an appropriate $Cu_2ZnSnS_4$ composition A (112) preferred orientation was appeared without annealing temperature as shown in the diffraction peaks of the CIS cells and was available for photovoltaic thin film materials. The band gap increased from 1.4 to 1.7eV as the composition ratio of Zn/Sn.. The optical absorption coefficient of the thin film was above $10^4cm^{-1}$.