The goals of the present study lie in presenting the direction of researches and developments for GaAs based solar cells, as well as in taking a step toward the establishment of GaAs MOCVD technologies. On the other hand, the GaAs on Si substrates has been recognized as a lightweight alternative to pure GaAs substrate for space application, because its density is less than the 7alf of GaAs or Ge. So, GaAs/Si has twofold weight advantage to GaAs monolithic cell. It was concluded that the development the development of MOCVD technologies should be ahead of GaAs solar cells.

This study makes SrTiO$_{3}$ with nonpolarity among ferroelectrics by RF sputtering as dielectric layer, produces thin film of Si/SrTiO$_{3}$ and Si/Ti/SrTiO$_{3}$ of MOS structure using Ti as buffer layer, measures and examines the electrical features with optical refractive index, absorption rate, permittivity, photon energy and as a result, ferroelectrics oscillation occurrs by the interaction within a film by light temperature and the absorption of thin film with Ti as buffer layer is increased. It is found that the pea\ulcorner of permittivity value of Ti/SrTiO$_{3}$ thin film has low values and is appeared late and as dipole which is found in dielectric is shown, the experiment satisfies the theory In the nature of permittivity by photon energy, imaginary value is higher and current variation slope of thin film of thickness SrTiO$_{3}$ has lower values in reverse bias.

The FEM analysis and properties of a 10 Gbps LiNbO$_{3}$ optical modulator fabricated are discrobed. The driving voltage and -3㏈ bandwidth of this device were 5.5 V and 7㎓, respectively.

We have investigated the optical properties of a Ti:LiNbO$_3$ optical waveguide which was fabricated by Ti-diffusion in a alto atmosphere, and propose an effective method of polishing waveguide. This method was regarded to be applicable to waveguide fabrications.

In ours study, we investigated the various properties in Te-light doped $Sb_{85}$G $e_{15}$ thin films such as the change of reflectance and transmittance according to phase change from amorphous to crystalline states In all films the transmittance was decreased, but the reflectance was increased by annealing. Particularly, the reflectance between as- deposited state and annealed state showed the largest change in the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film at 780nm, which was about 40% in as-deposited state and about 70% in annealed state. Therefore, it might be considered that the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film is recording medium showing to a good optical properties if it is used to optical recording of the phase change type. change type.ype.

This work presents the TMAH/IPA anisotropic etching characteristics with addition of Pyrazine. (100) Si etching rate of 0.747 ${\mu}{\textrm}{m}$/min at 8$0^{\circ}C$ was obtained using TMAH 25 wt.% / IPA 17 vol.% / pyrazine 0.1 g. The etching rate of (100) Si is increased about 52% compare to pure TMAH 25 wt.%. But etching rate of (100) Si is decreased with increasing Pyrazine additive. Activation energy of TMAH/IPA/pyrazine is much lower than TMAH and TMAH/IPA solutions. Addition of Pyrazine does not effect on surface flatness and decreases undercutting ratio about 20 %. Therefore, TMAH/IPA/pyrazine is an attractive anisotropic etchant because of alkaline-ion free.

We investigated the electro-optical characteristics of amorphous (a) - twisted nematic (TN) - liquid crystal display (LCD) on polyimide (Pl) films with different polarity. It was found that the threshold voltage of a-TN-LCD is decreased with increasing the polarity of the Pl film. We considered that the threshold voltage in a-TN-LCD is affected to the surface anchoring strength with polarity of the Pl films. Also, we observed the response time of a-TN-LCD on medium polarity of the Pl film is fast compared to high polarity of the Pl film. Finally, we obtained that the viewing angle of a-TN-LCD are almost same on different polarity of the PI films.

A reversible scalar phenomena in amorphous As$_{40}$ Ge$_{10}$ Se$_{15}$ S$_{35}$ have been investigated by blue-pass-filtered Hg lamp and He-Ne laser. Annealing causes the shift of the absorption edge to shelter wavelengths approximately 0.17ev, also illumination moves it to longer wavelengths about 0.05 ~ 0.07eV and it increases the refractive index maximum 0.3. Therefore the thermalbleaching(TB) and photodarkening(PD) effects have been understood by the results related to optical absorption characteristics. TB could be estimated as increasing the stabilization of amorphous chalcogenide films since absorption slope of extended regions(U) was not changed by annealing. On the other hand, PD could be understood as due to the enhancement of disorder since the slope of Urbach’s tail(1/F) around an absorption edge were decreased by illumination.ion.n.

As demand of electric power are growing and transmission line limited owing to enlargement of the downtown area The eonfidence of underground transmission cable which shows gradual growth are high. It is found whether insulating ability is good or not. In this paper, The exper iment result is shown that the fall of insulating ability and take preventive measure through the analysis of tans, water content, dielectric breakdown voltage, total acid number, volume resistivity , and gas in the oil in an accordance with the characteristic change of oil used very much for insulating oil of cable.

Using the 2 probe mothods, AC coductivities, dielectric loss factors, capacitances, and impedances were investigated to study. The electrical and sensing properties for SnO$_2$ added ZnO. In air The electrical conductivity of SnO$_2$added ZnO decrease by increasing the content of SnO$_2$, and the relative dielectric constants for 0.05, 5, 7 SnO$_2$ added ZnO are 55, 20, 14, respectively. In 3000ppm CO Gas. relative dielectric constants for 3, 5mol% SnO$_2$ added ZnO are 163, 68, respectively.

Enhancing the electrical conductivity of the ultrathin organic films is one of the important factors for the development of molecular electronic devices. The Langmuir-Blodgett(LB) technique has recently been attracted interest as the a method of deposition ultrathin films. We have fabricated N-docosyl-N'-methyl viologen-diTCNQ(DMVT) anion radical LB film and investigated the optical and electrical conductivity. We have measured UV/visible and FT-lR spectrum. In ESR spectrum, we confirmed that a half-amplitude linewidth is clearly dependent on both temperature and incident angle, which indicates conducting species change. The in-plane electrical conductivity of 21 layers is approximately 1.37$\times$10$^{-6}$ (S/cm).

In this paper, YbBa$_{2}$Cu$_{3}$O$_{x}$ superconductor was sintered by means of conventional solid reaction and the textured YbBa$_{2}$Cu$_{3}$O$_{x}$ was prepared by the Melted-Condensed Process in which SmBa$_{2}$Cu$_{3}$O$_{x}$ crystal was used as seed crystal to introduce the YbBa$_{2}$Cu$_{3}$O$_{x}$ crystal growth. The texture of YbBa$_{2}$Cu$_{3}$O$_{x}$ was examined by X-ray diffraction, and the fracture of YbBa$_{2}$Cu$_{3}$O$_{x}$ sample was observed by SEM, which proved the sample was well oriented. After oxygen absorption of the textured YbBa$_{2}$Cu$_{3}$O$_{x}$ sample, it's critical temperature was measureed to be 86K.eed to be 86K.

The electrical properties such as space charge accumulation, dielectric breakdown and water treeing of acrylic acid-grafted polyethylene (PE-g-AA) and n-butyl acrylate-grafted polyethylene (PE-g-nBA) were investigated. In PE-g-AA, heterocharge founded in LDPE decreased with the increase of AA graft ratio and changed to the homocharge formation above 0.lwt% due to the introduction of carbonyls. Conduction currents decreased with the increase of AA graft ratio. AC breakdown strength increased and water treeing length decreased with the increase of graft ratio in PE-g-AA and PE-g-nBA.

Effects of ionic impurities on the dielectric breakdown of the crosslinked polyethylene (XLPE) were studied using aqueous electrolytes. It was found that the AC breakdown strength of XLPE decreases considerably when the ions are present in the electrodes composed of aqueous electrolyte. Details of results were described.

Indium nitride thin films were deposited on Si(100) substrates by reactive sputtering method. The metallic indium target was sputtered by nitrogen gas with rf sputtering equipment. The surface morphology and cross-section of the InN thin films were investigated by scanning electron microscopy. The crystal orientations were investigated by X-ray diffraction and the Hall effect were measured with van der Pauw method. The indium nitride thin film showed high Hall mobility(215$\textrm{cm}^2$/V-sec) at 5mTorr total pressure and rf power 60W.

The p-GaN fins doped with the impurity of Zn were grown on n-GaN films to prevent the defects from the lattice mismatch with sapphire substrates by HVPE. For growth of the high quality n-GaN, the optimized conditions were at first deduced from the results of various HCI gas flow rates and growth temperatures. On the basis of these conditions, p-GaN films were grown and investigated of the characteristics. The FWHM of the double crystal rocking curve of n-GaN was decreased and the hexagonal phases on the surface of GaN films were tend to be vivid with the inoement of HCI gas flow rates. Finally the n-type GaN films with FWHM of 648arcsec were obtained at 10cc/min of HCI gas. As the GaN films were grown with the above conditions, Zn was introduced in the form of vapor as a dopant for p-GaN films. But when Zn vaporized at 77$0^{\circ}C$ was doped to the films, the crystallites of Zn were distributed uniformly on the surface of the GaN film due to the over-doped.

The purpose of this study is to research and develop poly(p-phenylene)(PPP)-based carbon obtained by pyrolyzing electrochemically prepared PPP as a anode of rocking chair batteries. Disordered carbon materials were obtains by heat-treating of PPP films in a nitrogen atmosphere at 4$0^{\circ}C$ to 110$0^{\circ}C$ for 1 hour. The carbon prepared by heat treatment showed a broad x-ray diffraction peak having characteristics of disordered carbon. Carbon electrodes were charged and discharged at a current density of 0.1㎃/$\textrm{cm}^2$. First discharge capacity of 267㎃h/g and 34% of charge/discharge efficiency were observed from PPP-based carbon prepared at $700^{\circ}C$.

We have examined conduction properties and electrochemical properties of MCMB 6-28 and MPCF 3000. As results, electrical conductivity of carbon decreased with increasing the number of intercalated lithium ion. MCMB and MPCF showed reversible redox reaction, and the potentials of the oxidized and reduced peaks were 0.3V and 0V, respectively. First discharge capacity of MCMB was 190㎃f/g and that of MPCF was 220㎃h/g. MPCF has good properties for lithium secondary battery.

The photocharge voltage technique is based on the measurement of a small electrical potential difference which appears on any solid body when subject to illumunation by a modulated laser light beam. This voltage is proportional to the induced change in the surface electrical charge and is nondestructively measured on various materials such as conductors, semicinductors and dielectrics. In this paper, photocharge voltage on conductors, semiconductors and dielectrics are measured nondestructively using a capacitative coupling. The test structures and the validity of this system to characterize the surface properties for soled materials are shown.

This paper describes the development of new type arrester for 22.9kV class distribution lines, with polymer insulating materials applied to their housings. The new arrester employs silicone insulating material for its housing, instead of the conventional porcelain housing, aiming at reduction in size and weight and explosion proof against internal short circuit failure. And, since the design of sheds is not restricted. it is possible to provide a long surface leakage distance per strike length and improve anti-contamination performance.

We were evaluated from organic insulator of low dielectric constants, This organic insulator material is not only conservate TFT chanel but also used to insulator material to data line and pixel ITO electrod. This organic insulator material is possessed high platness and we can coat by Spin-On-Glass type. And we can make high aperature device because minimized black matrix width from coupling cap to data line and pixel ITO electrod, This evaluation with acryl over coat and PFCB(perflorecyclobutine) and we got good results.

$\alpha$-sexithienyl($\alpha$-6T) thin films were deposited by Organic Molecular Beam Deposition(OMBD) technique, where the $\alpha$-6T was synthesized and purified by the sublimation method. The thin films of the $\alpha$-6T were deposited under various deposition conditions. The effects of deposition rate, substrate temperature. and vacuum pressure an the formation of these films have been studied. The molecular orientations of $\alpha$-6T films were investigated with the polarized electronic absorption spectroscopy. The molecules in the $\alpha$-6T film deposited at a low deposition rate under a high vacuum were aligned almost perpendicular to the substrate. The film deposited at an elevated substrate temperature (~9 $O^{\circ}C$) showed higher conductivity than the film deposited at room temperature.

Theoritical predictions are given of the time dependence of charged particle densities and electric field in a pseudospark discharge. Our medel is based on a numerical solution of the continuity equation for electrons and positive ions and coupled with Poisson's equation for the electric field. From numerical results, we can identify phisical mechanisms that lead to the rapid rise in current in the onset of a pseudospark discharge.

An electronic nose system is an instrument designed far mimicking human olfactory system. It consists generally of gas (odor) sensor array corresponding to olfactory receptors of human nose and artificial neural network pattern recognition technique based on human biological odor sensing mechanism. Considerable attempts to develop the electronic nose system have been made far applications in the fields of floods, drinks, cosmetics, environment monitoring, etc. A portable electronic nose system has been fabricated by using oxide semiconductor gas sensor array and pattern recognition technique such as principal component analysis (PCA) and back propagation artificial neural network The sensor array consists of six thick film gas sensors whose sensing layers are Pd-doped WO$_3$ Pt-doped SnO$_2$ TiO$_2$-Sb$_2$O$_3$-Pd-doped SnO$_2$ TiO$_2$-Sb$_2$O$_{5}$-Pd-doped SnO$_2$+Pd filter layer, A1$_2$O$_3$-doped ZnO and PdCl$_2$-doped SnO$_2$. As an application the system has been used to identify CO/HC car exhausting gases and the identification has been successfully demonstrated.d.

The electrical properties and the sensing properties of ZnO-TiO$_2$ composites were investigated by using the complex impedance measurement and voltage-current source and measurement unit. In air, the electrical conductivity of TiO$_2$ added ZnO increase with increasing the content of TiO$_2$ and the relative dielectric constants for 3, 5 and 7mol% TiO$_2$ added ZnO are 7, 13 and 120, respectively. In 3000ppm CO gas, the relative dielectric constants for 3, 5mol% TiO$_2$ added ZnO are 25, 28, respectively.

LiMn$_2$O$_4$ is prepared by reacting stoichiometric mixture of LiOH . $H_2O$ and MnO$_2$ (mole ratio 1 ; 1) and heating at 80$0^{\circ}C$, $700^{\circ}C$ for 24h, 36h, 48h, 60h and 72h. We obtained through X-ray diffraction that lattice parameter varied as function of calcined temperature and time. Cathode active materials calcined at 80$0^{\circ}C$ for 36h, (111)/(311) peak ratio was 0.37. It showed good charge/discharge characteristics. When (111)/(311) peak ratio was 0.37, it was that crystal structure is formed very well. In the result of charge/discharge test, when heated at 80$0^{\circ}C$ for 36h, charge/discharge characteristics of LiMn$_2$O$_4$ is the best.

There exists a interface among the different kinds of materials in the solid insulating ones, which effects on the insulating capability heavily. The insulating construction has been developed for each usages and take themselves into several sorts. The conjunction between CV cables have the electrical weakness of solidity and solid interface, so they were focused at the long distance-line. To this background, it is very important to get the information on the interface influencing on the insulating capability of cable and to observe its procedure. In this paper, the interface was made artificially to research the effect owing to the toughness of interface, which results in the aging and treeing proceeding was observed. The polyethylen, as is generally using for the cable, was taken in this research.

We investigated new type non-robbing liquid crystal (LC) alignment techniques in the cell with slanted non-polarized ultraviolet (UV) irradiation on polyimide (Pl) film. It is shown that the uniform alignment for nematic (N) LC is obtained by using slanted non-polarized UV irradiation on Pl surface. We successfully obtained that the pretilt ang1e of NLC is generated about 3 degree in the LC cells by using slanted non-polarized UV irradiation with 70 degree on Pl surface. We consider that the pretilt angle generation for NLC is attributed to interaction between the LC molecular and the PI surface. We conclude that the uniform LC alignment is attributed to anisotropic dispersion force effect due to photo depolymerization of polymer on Pl surface.

In this paper, the viewing angle characteristics of amorphous (a) - twisted nematic (TN) - liquid crystal display (LCD) on poly(viny)cirmamate (PVC) alignment surfaces were investigated. It was found that the threshold voltage is increased with increasing the polymerization on PVC surfaces. We suggest that the threshold voltage is affected to the surface anchoring strength with increasing the polymerization of the alignment film. Also, we obtained that the viewing angle of a-TN-LCD is increased with increasing the polymerization on PVC surfaces. Finally, we considered that the viewing angle of a-TN-LCD on PVC surfaces is large compared to TN-LCD on rubbed polyimide (Pl) surface.

In this study, we investigated the Pretilt ang1e generation in nematic liquid crystal (NLC) by using the transcription, alignment on polyimide(Pl) surfaces. That the uniform alignment of NLC is observed by microphotograph textures in LC cells on Pl surface. We obtained that the pretilt angle of NLC are generated about 3.6$^{\circ}$on Pl surface. It is considered that the LC alignment by transcription alignment method is attributed to memory effect of LC on Pl surface.

The high pretilt angles in nematic liquid crystals (NLCs) have been generated on robbed polythiophene (PTP) surfaces with alkyl chain lengths. The pretilt angle of the NLC was observed on unidirectionally rubbed PTP surfaces with alkyl chains with more than 9 carbon atoms. We obtained the Pretilt angle of 15~40$^{\circ}$ on rubbed PTP surfaces with 10 carbon atoms in the a1ky1 chain. Also, the pretilt angles of 65~80$^{\circ}$ of NLC were obtained on rubbed PTP surfaces with 11 and 12 carbon atoms in the alkyl chain. We suggest that this high pretilt angle generation in NLC is due to the surface-excluded volume effect by the alkyl chain lengths between. the LCs and the PTP surfaces. Finally, we conclude the odd-even effect on rubbed PTP surfaces is clearly contributed to the pretilt angle generation.

The structural defects, impurities, degree of crosslinking and shrinkage of 38 field-aged distribution cables have been analyzed. For the comparison of data, 9 new cables were also subjected to an analysis. It is observed that the structural defects and degree of crosslinking show a radial profile. The structural defects are different depending on the manufacturer. A large amount of impurities is present in the insulation shield, which hold true for the new cables manufactured recently. The degree of crosslinking near both shields is lower than that at the central region of the insulation layer. It was also found that, in some cal)toes, the ins난lation was not fully crosslinked. The shrinkage of field-aged cables is higher than that of new cables.

The influences of ZrB$_2$ additions to SiC on microstructural, DDM(Electrical Discharge Machining), mechanical and electrical properties were investigated. composites were prepared by adding 15, 30, 45 vol.% ZrB$_2$particles as a second phase to SiC matrix. SiC-ZrB$_2$ composites obtained by hot pressing for high temperature structural application were fully dense with the relative densities over 99%. The fracture toughness of the composites were increased with the ZrB$_2$contents. In case of composite containing 30vol.% ZrB$_2$, the flexural strength and fracture toughness showed 45% and 60% increase, respectively compared to that of monolithic SiC sample. The electrical resistivities of SiC-ZrB$_2$ composites decreased significantly with the ZrB$_2$ contents. The electrical resistivity of SiC-30vol.% ZrB$_2$ composite showed 6.50$\times$10$^{-4}$ $\Omega$.cm. Cutting velocity of EDM of SiC-ZrB$_2$ composites are directly proportional to duty factor of pulse width. Surface roughness, however, are not all proportional to pulse width. Higher-flexural strength composites show a trend toward smaller crater volumes, leaving a smoother surface; the average surface roughness of the SiC-ZrB$_2$ 15 vol.% composite with the flexural strengthe of 375㎫ was 3.2${\mu}{\textrm}{m}$, whereas the SiC-ZrB$_2$ 30.vol% composite of 457㎫ was 1.35${\mu}{\textrm}{m}$. In the SEM micrographs of the fracture surface of SiC-ZrB$_2$ composites, the SiC-ZrB$_2$ two phases are distinct; the white phase is the ZrB$_2$and the gray phase is the SiC matrix. In the SEM micrographs of the EDM surface, however, these phases are no longer distinct because of thicker recast layer of resolidified-melt-formation droplets present. It is shown that SiC-ZrB$_2$ composites are able to be machined without surface cracking.

스퍼터링법으로 제조한 CoNbZr/Cu/CoNbZr 다층막에 대해 습식 식각법으로 패턴을 형성하기 위해 새로운 식각 용액을 제조하여 이 용액의 최적의 식각 조건에 대해 연구하였다. 염기성 수용액은 농도에 관계없이 Cu만을 선택적으로 식각하며 CoNbZr 비정질 박막은 식각하지 않았다. 그러나, 본 연구에서 제조 한 17.5 mol%의 염기성 수용액에 HF를 20 mol% 혼합한 식각 용액으로 CoNbZr/Cu/CoNbZr 다층막을 동시에 식각할 수 있었다. 또한 이 식각 용액은 CoNbZr/Cu/CoNbZr 다층막을 3단계로 식각하고 식각된 단면은 이방성 구조를 가지며, 매우 우수한 식각 특성을 나타내었다.

It is well known that the metallo-phthalocyanines(MPcs) are sensitive to toxic gaseous molecules, such as NO$_2$, NO, SO$_2$. MPcs are thermally, optica1ly, mechanically and chemically stable. Therefore, it is interesting to prepare phthalocyanine LB films containing tin as a chemical sensor for NO$_2$ and SO$_2$ gas and test their sensitivity to these toxic gases. Frist, in this study, ultra thin films of Octa-dodecyloxy tin-phthalocyanine were prepared on various substrates by LB technique. Langmuir-Blodgett(LB) technique is one of the ways of fabricating organic thin films. It has the advantage to control the alignment and orientation of the molecules in the films. $\pi$-A isotherm and transfer ratio of tin-phthalocyanine derivative. UV-VIS. spectroscopy were investigated. Also intrinsic current-voltage(1-V) characteristics of these films was investigated.

Langmuir-Blodgett(LB) technique is one of the ways of fabricating organic ultra-thin films. It is well known that It has the advantage to control the alignment and orientation of the molecules in the films. Metallo-phthalocyanines(MPcs) are sensitive to electron affinitive toxic gaseous molecules, such as NO$_2$, NO, SO$_2$. MPcs are thermal, optical, mechanical, chemical stable. Therefore, it is interesting to prepare phthalocyanine LB films containing copper as a chemical sensor for NO$_2$ and SO$_2$ gas and test their sensitivity to these toxic gases. In this study, thin films of Octa-dodecylosy copper-phthalocyanine were prepared by LB technique. $\pi$-A isotherm, transfer ratio, UV-VIS. spectroscopy of these films were investigated. Also current-voltage(I-V) characteristics of these was auto investigated.

This paper describes the electron transport characteristic in SiH$_4$ gas calculated for range of E/N values from 0.5~300(Td) by the Monte Calro simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters are obtained for TOF method. The results gained that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization coefficients longitudinal and transverse diffusion coefficients, characteristics energy agree with thee experimental and theoretical for a range of E/N. The electron energy distributions function were analysed in monosilane at EN : 30, 50(Td) for a case of equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by a TOF method.

The object of this study is to develop various composing material for SOFC generation system, and to test unit cell performance manufactured. So we try to present a guidance for developing mass power generation system. We concentrated on development of manufacturing process for cathode, anode and electrolyte.

A series of interpenetrating polymer networks(IPN) based on Epoxy, MA and PU were synthesized in order to improve withstand voltage properties of Epoxy resin. Dielectric breakdown characteristics are investigated for six types of specimens. As a result, it was found that impulse voltage dielectric breakdown characteristic of SIN specimen was the most excellent. It was also found that SIN specimens were stronger than anything else in scanning electron microscopy. On the other hand, as a result of consideration of dielectric breakdown strength change according to adding fi1ter, it was confirmed that the decrease of dielectric breakdown strength are controlled slightly by IPN method.

TFT2DS was developed to provide the usefulness as an analytic and design tool. The static characteristics of a-Si:H TFTs demonstrated a good agreement between simulated and measured data. This paper shows that TFT2DS can optimize the physical parameters of a-Si:H through sensitivity simulations and compute the static characteristics of a-Si:H TFTs. Moreover, through the sensitivity study of the parameters, it is shown that the optimizations of both the physical parameters of a-Si:H and the parameters of a-Si:H deposition, which must be inter-related, might be possibl.

It is likely that the corona discharge appears due to the motion and the multiplication of electron and ion under the nonuniform electric field. Because the motion and the multiplication of electron and ion are the function of electric field, for the simulation of the corona discharge, we have to calculate the electric field, before the calculation of the motion and the multiplication of electron and ion. In this paper, the electric field is calculated on the assumption that the gap between a hyperboloidal needle and a plane is 1-dimension, and the motion and the multiplication of electron and ion are determined by Flux-Corrected Transport method. For this purpose, we solve the electron and ion continuity equation together with Poisson equation. We calculated the current density and the electron and ion density distributions between electrodes as well as electric field distortion due to the space charge assuming that the discharge channel radius is 100${\mu}{\textrm}{m}$. In this simulation, it is found that the current density has one peak as observed by experiment, and electric field distortion is important to the formation and the stability of the corona discharge.

본 연구에서는 최근 그 사용이 급증하고 있는 옥외용 절연재료에 대한 열화특성을 평가하기 위하여 펄렛상태의 EPDM 원 시료를 Hot plate를 이용하여 씨트로 제작하였다. 기후조건에 대응하는 열 싸이클에 의해 절연재료에 일어나는 화학적, 전기적 특성변화를 조사하기 위하여 주기적인 열싸이클을 가하면서 일정 기간별로 유전특성과 표면누설전류 및 표면의 화학적 변화에 대하여 측정하였다. 또한 접촉각 측정을 통하여 EPDM의 전기적 화학적 열화 또는 성질 변화에 대하여 검토하였다. 측정 결과 EPDM은 비교적 단기간의 열싸이클에 대해서 전기적 화학적 특성변화는 그다지 나타나지 않는 것으로 나타났다.

GaN crystals were deposited by tile direct reaction between ammonia and gallium at 105$0^{\circ}C$, 107$0^{\circ}C$ and 110$0^{\circ}C$ on (0001) plane sapphire substrate. The size of GaN crystals were increased with reaction temperature, but its were decreased with increasing the flow rates of NH$_3$. The size of GaN of 46${\mu}{\textrm}{m}$ were deposited ell sapphire substrate at the reaction temperature of 107$0^{\circ}C$ for growth time of 60 min.

The Thin films were obtained by plasma polymerization of phenyl isothiocyanate. Polymerizations were carried out in rf(13.56 [MHz]) glow discharge generated in an inter-electrode capacitively coupled gas flow system. It was fecund that this monomer produces uniform films with a wide range of thicknesses, from hundreds of nanometers to tens of micrometers. The deposition rate appeared to be dependent on the substrate distance from the monomer inlet. The IR data revealed significant decrease in -NCS groups content in the polymer as compared with the monomer spectrum and indicated for the appearance of new absorption bands corresponding to the -CN and C-H aliphatic groups. The soluble fraction by GC was found to be composed of numerous low molecular-weight compounds.

ZnO thin film had been deposited on the glass 7r sputtering method, and investigated by electrical and structural properties. When the rf power was 188W and sputtering pressure was 1$\times$10$^{-3}$ Torr at room temperature, Al-doped ZnO thin film had the lowest resistivity(1$\times$10$^{-4}$ $\Omega$.cm), and then carrier concentration and Hall mobility were 6.27$\times$10$^{20}$ cm$^{-3}$ and 22.04$\textrm{cm}^2$/V.s, respectively. And undoped ZnO thin film had about 10$^{14}$ $\Omega$.cm resistivity when oxygen content was 10% or more at room temperature. The surface morphology of ZnO thin film observed by SEM was overall uniform when oxygen content was 50% below and sputtering pressure was 1.0$\times$10$^{-1}$ Torr.

The LB technique is one of the most powerful fabricating methods of organic ultra-thin film, which deposits a monolayer films in molecular level on the surface of the substrate. We have investigated the electrical characteristics of Myristic acid, Stearic acid and Arachidic acid LB films for horizontal direction to develop for the gas sensor. The optimum conditions for a film deposition were obtained by measurement of $\pi$-A isotherm. The status of the deposited film was confirmed by measurement of UV absorbance. We could distingished the difference of I-V characteristics for the fatty acid for the horizontal direction. The conductivity of fatty acid LB films for horizontal direction was 10$^{-7}$ ~ 10$^{-9}$ [S/cm] that mean like semiconductor.

The new system for identification of organic vapours and analysis method of mechanism between organic vapours and sensitive materials were attempted using the resonant resistance and resonant frequency of Quartz Crystal Analyzer (Q. C. A.). The resonant resistance shift means rheological changes in sensitive LB films occurred by the adsorption of organic vapours, while the resonant frequency shift represent the mass of organic vapour loaded in or on the sensitive LB films. It is thought that we can obtain more accurate response mechanism of organic vapour using the resonant frequency and resonant resistance diagram. The polymeric sensitive material were quantitively depositied using the LB method. In the experimental results, the adsorption behavior of organic vapour response can be decided by two type ; surface adsorption and penetration into sensitive material. Organic vapours had different positions in the Frequency-Resistance (F-R) diagram as to the kinds and concentrations of organic vapours. Thus F-R diagram can be applied to the development of one channel gas sensing system using the Quartz Crystal Analyzer.

In this paper, we synthesized poly(N-(2-4-imidazolyl) ethyl) maleimide-alt-1-octadecene(IMI-O) polymer that can have function group and improvement of mechnical strength and then confirmed the possibility of molecular device made by LB method. Evaluation of LB film have been processed such as the technique of EA, $^{1}$H-NMR, FT-IR. Also, the deposition status was observed by SEM and Metal/Insulator/Metal(MIM) device was fabricated for investigation of electric properties. In our experimental results. The surface pressure for the solid state was investigated to 20~35[dyne/cm] by the $\pi$ -A isotherm and the limiting area was about 40 ~45 ($\AA$$^2$/molecule). The deposition status of LB films was confirmed by SEM. The conductivity of LB film was found to be 10$^{-14}$ ~10$^{-13}$ [S/cm] by I-V characteristic.

광부품, 광섬유 상호접속을 위한 각 재료의 V-groove가공방법과 그 응용에 대하여 조사하고 직접 V-groove를 제작하였다 각 재료의 V-groove가공에는 장단점이 있다. 따라서 광부품 또는 광섬유 접속시 각 재료의 사용환경에 의하여 가공방법을 결정해야한다. 본 논문은 광부품 상호접속을 위한 현존하는 여러 재료에 따른 V-groove 가공 방법과 그 응용에 대하여 고찰하였다.

Langmuir-Blodgett(LB) method is knowers as a unique method for preparing organic thin films, which can control thickness of the films in molecular level, and many kinds of ultra thin films of functional molecules have been prepared using this method. in this study, the electrical properties of phospholipid monolayers on a water surface was inve stigated by means of stimulus speed(40mm/min, 60mm/min).

The Maxwell displacement current was investigated in the connection with phase diagram of monolayers on a water surface. We measwed the displacement current of 8A5H monolayers on the water surface. The displacement current generated during 8A5H monolayers compression. Also, displacement current pulses were found to be generated when isomerizations were induced in 8A5H monolayers by irradiation with ultraviolet light ($lambda_1=340nm$) and visible light($lambda_2=450nm$).

We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.

This study is about a connective method of High Tc wire for long wire. We prepared silver-sheathed BiPbSrCaCuO wires by the powder-in-tube method. Since the superconducting wires are ceramic, it is very hard to connect each other. In this study, we used a silver sleeve to contract wires and pressed them by various preasures. Then optimum preasure was 9,000 Kgf/$\textrm{cm}^2$ to get the high critical current. The higest critical current was 10A.

YBa$_2$Cu$_3$O$_{x}$ samples with different amounts of $Y_2$BaCuO$_{5}$ were prepared by MPMG (Melt Powder Melt Growth) method. The effects on the size of initial particles and Ag addition for $Y_2$BaCuO$_{5}$ distribution in YBa$_2$Cu$_3$O$_{x}$ were invesgated. The samples prepared by the melting process usually have large grains up to several ㎣ and precipitates of $Y_2$BaCuO$_{5}$. The distribution of the $Y_2$BaCuO$_{5}$ particles in the samples depends on the size of initial particles and the amounts of Ag addition.Ag addition.

A free space transmission method using standard gain horn antennas in the frequency range from 9.0 to 10.5GHz is applied to determine the dielectric properties of grain such as rough rice, brown rife and barley. The dielectric constant and loss factor, which depend on the moisture content of the wetted grain are obtained from the measured attenuation and phase shift by vector network analyzer. The effect of density fluctuation, which is an important parameter governing the dielectric properties of grain, on the dielectric constant and loss factor is presented. A new density-independent model in terms of measured attenuation and moisture density is proposed for reducing the effects of density fluctuation on the moisture content measurement.

A free sparse transmission method using X-band standard gain horn antenna is applied to measure the attenuation and phase shift of microwave signal through the wetted grain such as rough rice, brown rice and barley. The moisture content of grain varied from 11 to 25% based on its wetted condition. The dielectric constant and loss factor, which depend on the moisture content of the wetted grain are obtained from the measured attenuation and phase shift by vector network analyzer. The measured values of dielectric constants as a function of moisture density are compared with values of those obtained using the predicted model for estimating dielectric constants of grain.

A cellular power amplifier using an APCVD(Atmospheric Pressure Chemical Vapor Deposition)-grown SiGe base HBT of ETRI has been designed with a linear simulation CAD. The Si/SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0 GHz and a maximum oscillation frequency(f$_{max}$) of 16.1 GHz with a pad de-embedding A packaged power Si/SiGe HBT with an emitter area of 2$\times$8$\times$80${\mu}{\textrm}{m}$$^2$typically shows a f$_{T}$ of 4.7 GHz and a f$_{max}$ of 7.1 GHz at a collector current (Ic) of 115 mA. The power amplifier exhibits a Forward transmission coefficient(S21) of 13.5 dB, an input and an output reflection coefficients of -42 dB and -45 dB respectively. Up to now the III-V compound semiconductor devices hale dominated microwave applications, however a rapid progress in Si-based technology make the advent of the Si/SiGe HBT which is promising in low to even higher microwave range because of lower cost and relatively higher reproducibility of a Si-based process.ess.ess.

A hair-pin shaped microstrip-line resonator and a dielectric resonator for injection-locked oscillators have been designed and fabricated for the comparative studying of their characteristics. In general, a commonly used dielectric resonator shows lower phase noise value than hair-pin resonator in the free-running mode. In the injection-locked mode, however, a hair-pin resonator is superior to the dielectric resonator; the wider tuning range, the 22% improved locking bandwidth, the lower noise effect, the short term stability, and the higher power level. The planar structure of a hair-pin shaped microstrip-line resonator will be easily applied to monolithic microwave integrated circuits.

The dielectric resonators(DRs) with dielectric properties are widely used in microwave integrated circuit(MICs) and monolithic microwave integrated circuits(MMICS). The variational method as numerical simulation scheme would be applied to calculate the resonant frequencies(fr) and Q-factors of microwave dielectric resonators. The dielectric resonator with a cylindrical “puck” structure of high dielectric material is modeled in this simulation. The parameters, such as the diameter, the height, and the dielectric constant of dielectric resonator, would determine the resonant frequency and the Q-factor. The relationship between these parameters would effect each other to evaluate the approximate resonant frequency. This simulation method by the variational formula is very effective to calculate fr, and Q-factor. in high frequency microwave dielectric resonator The error rate of the simulation results and the measured results would be considered to design the microwave dielectric resonators.

Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their possible application as large-area display-emitting display. One of the problems of such devices is lifetime of the cell, where the degradation of the cell is partially due to the crystalliyzation of organic layers. In large part, this problem can be solved by using a multilayer device structure prepared by vapor deposition technique. In this study, blue light-emitting multilayer organic electroluminescence devices were fabricated vsing Poly (9-vinylcarbaEole) (PVK) and 2- (4-tert-butylphenyl)-5-(4$^{#}$-bis-phenyl) 1,3,4-oxadiazole (PBO) as hole trasport and electron transport material, respectively, where trim(8-hyd roxyquinolinate) aluminum (Al $q_3$) was used as a luminescenct material. A cell structure of glass sub- strate/indume-tin-oxide(ITO)/PCK/Al $q_3$/PBD/Mg:In was employed. Blue emission peak at 510nm was observed with this cell structure.e.

Recently, mixture insulating oils is widely used in respect that the physical and the electrical properties is more excellentthan mineral oils, such as alkylbenzene oils and silicone oils, and that cost is lower than alkylbenzene oils or silicone oils. Also, it is important to research for the additive BTA(Benzotriazole) as a study for the phenomena of streaming electrification of mineral oils. So, mixture insulating oils class 7-2, is selected as a specimen in this experiments, and the contents of BTA in specimen are 0.2[ppm], 10[ppm] and 30[ppm], respectively. Then, the physical and the electrical properties for each specimen is made researches.

In order to investigate the volume resistivity on the electrical properties of transformer oils, the Transformer oils contained BTA is prepared, which was classified by the contents of BTA, such as 1[ppm], 10[ppm], 20[ppm], 30[ppm], 50[ppm], respectively. To measure the physical properties of transformer oils contained BTA, Fourier Transform Infrared Spectroscopy is investigated. And for the study of electrical properties is made by measuring the volume resistivity of each specimen. As result of this experiments, it is confirmed that the volume resistivity characteristics of specimen contained BTA 10[ppm] is superior.

Polyphenylenediamine(PPD)film was prepared with organo sulfur compond (2-aminothiophenol, 1,2-ethanedithiol, and 2-aminoethaneethiol etc.) adding lithium salt to increase the electrical conductivity of the polymer surface. The molecular structure of conductive polymer synthesized were examined and discussed by using SEM, FT-IR, NMR etc. The elecrical conductivity messurement were carried out with four-probe method at dry box of He and $N_2$atmosphere. The typical value of successful electrical conductivity was 1.2$\times$10$^1$S/cm at room temperature.

Electroluminescent(EL) devices are constructed using multilayer organic thin film. A cell structure of glass substrate/Indium-Tinoxide/TPD as a hole transporting layer/Alq3+Rhodamine 101 perchrolate(Red3) as an emitting layer/Alq3 as an electrron transporting layer/Al as an electrode was employed. Optimal thickness of emitting layer in EL cell was performed from the viewpoint of the electronics properties of emitting layers. The general vapor-deposition method was used to control the thickness of omitting layer in EL devices and electro-optical characteristics were measured. It is clarified that controlling thickness of emitting layer in vapor-deposition film had an effect on the change of carrier injection and EL spectrum. The intensity of red omission with luminance of 81cd/$m^2$ was achived at 11V driving voltage. The surface morphology of emitting layer in EL devices was investigated.

The Lithium ion secondary battery has been developed for high energy density of portable electrical device and electronics. Among the many conductive polymer materials, the positive active film for Li polymer battery system was synthesized successfully from polyphenylene diamine(PPD) by chemical polymerization in our lab. And PPD-DMcT(2, 5-dimercapto-1, 3, 4-thi-adiazole) composite flim conductive material, at high temperature was also prerared with the addition of dimethylsulfoxide(DMSO). The surface morphology and thermal stability of prepared composite flim was carried out by using SEM and TGA, respectively. Electrochemical and electrical conductivity of composite flim were also discussed by cyclic voltammetry and four-probe method in dry box(<27pm). And the electrode reaction mechanism was detected and analyzed from the half cell unit battery system.

This paper describes the thermally stimulated current (TSC) measurements of arachidic acid and polyamic acid alkylamine salt(PAAS) LB film, which is a precursor of polyimide(PI). The measurements were performed from room temperature to about 25$0^{\circ}C$ and the temperature was increased at a rate of 0.02 K/s linearly. It shows that peaks of TSC are observed at about 8$0^{\circ}C$ in the arachidic acid and about 8$0^{\circ}C$, 16$0^{\circ}C$ in the PAAS LB films. Results of these measurements indicate that one peak at 8$0^{\circ}C$ is resulted from alkyl group; the other peak at 16$0^{\circ}C$ is due to alkyl and C-O group of PAAS. Additional large peak at about 16$0^{\circ}C$ is due to dipole moments in the PAAS films. The DSC of PAAS, arachidic acid and octadesylamine are measured. Thermal imidization was performed at 30$0^{\circ}C$ for 1 hour by our pre study.

It is important to investigate the molecular arrangement and the orientational distribution in the study of LB films. Polarized UV/visible absorption spectra make it possible to reveal the molecular arrangement and the orientational distribution. It is clarified that the PAAS LB films have specific directions in the molecular arrangement and the orientational distribution, which art different in intensity corresponding to the surface pressure. Unpolarized UV/visible absorption spectra reveal that the surface pressure is proportional to the finn thickness and is related to the molecular orientation. Current-Voltage(I-V) measurements provide that the current decreases as the surface pressure increases and there are certain phenomena called switching phenomena. Switching effort indicates that the current flows in high conductivity during on-state and suddenly decreases into low conductivity during off-state.

In this paper, the eddy current flow meter with 4-coil group is designed and made on the basis of theory, and its characteristics is considered through dry test flow experiments. The biggest output signal varied with wave form and frequency, and 900Hz in rectangular wave, 27.12kHz in sine wave. The conductivity is bigger, the output signal is bigger and has a linearity between both relation, and also The Magnetic Reynolds Number and output characteristics. The flow faster and the output singnal is bigger.

Generally the high dielectric films, such as PZT(Pb(Z $r^{1-x}$ $Ti_{x}$ ) $O_3$) and BST(B $a_{l-x}$S $r_{x}$ Ti $O_3$) have been formed on the Pt thin films. However it is generally known that the dry etching of Pt is difficult because of its chemical stability. So, the dry etching of Pt remains at the preliminary work. Therefore, in this study, Pt etching mechanism was investigated with Ar/C $l_2$gas plasma by using XPS(X-ray photoelectron spectroscopy) and QMS(Quadrupole mass spectrometry). Ion current density was measured with Ar/C $l_2$gas plasma by using single Langmuir probe. XPS results shoved that the atomic % of Cl element on the etched Pt sample increased with increasing Ar/(Ar+C $l_2$). And QMS results showed that the increase of Ar partial pressure in the plasma resulted in the improvement of C $l_2$dissociation and Cl redical formation and simultaniously the increase of ion bombardment effects.s.s.

BaTiO$_3$thin film capacitor were prepared on Pt(100)/SiO$_2$/Si(100)wafer by RF sputtering technique. Dielectric and electrical characteristics of the thin film capacitor are investigated. The Dielectric constant and loss were about 683 and 5[%], respectively. We found that the leakage current of thin film capacitor is depend on RF power during deposition. Because of increase of activation energy, leakage current inclosed at high RF power and sheet resistivity of the films was decreased. Swithching voltage of thin film capacitor was 4.4[V]

The experimental system used for vapor deposition polymerization (VDP) from PMDA (Pyromellitic dianhydride) and DDE (4, 4-diaminodiphenyl ether) were changed to PI (polyimide) thin films by thermal curing. The curing temperatures were 20$0^{\circ}C$, 25$0^{\circ}C$, 30$0^{\circ}C$, 35$0^{\circ}C$. When test number was 40, the electric breakdown strengths of PI were 1.21MV/cm, 3.94MV/cm, 4.61MV/cm, 4.55MV/cm according to curing temperatures.

In this study, The PVDF thin film was fabricated on the one method of dry-process the physical vapor deposition method, applied electric field, and evaporation control in $\beta$-PVDF thin film preparation. A study on the electric-field-phase change of PVDF thin film in physical vapor deposition using the polymer deposition apparatus which are manufactured for oneself. In the analysis of Fourier-Transform Infrared spectra, according to increasing of electric field intensity, the 510$cm^{-1}$ / peak and 1273$cm^{-1}$ / peak which are showed in $\beta$-PVDF increase, on the contrary the 530$cm^{-1}$ / peak and 977$cm^{-1}$ / peak which are showed in $\alpha$-PVDF decrease.

Effects of volatile impurities on deterioration characteristics of XLPE were investigated. Block type plate with needle-plane electrode and artificial void filled with $N_2$gas or humidity was subjected under high electric field. The dyed region by oxidation reaction around the artificial void filled with humidity was detected before tee initiation. Electrical tree was started from the tip of void filled with $N_2$gas earlier than humidity.

Characteristics of tree propagation and fractal dimension in DGEBA/MDA/GN system were investigated. In the GN contents of 0 and 5 phr, tree was not produced. In the GN content of 10 phr, a reversed sigmoidal behaviour was found but in those of 15 and 20 phr, linear behaviors were found. All electrical trees possessed fractal characteristics. Fractal dimensions of epoxy resin system were almost constant with the variation of observation angles. Since dielectric breakdown occurred earlier in the GN content of 20 phr, fractal characteristics of modified epoxy resin system in a particular term couldnt be investigated.

(Ba$_{x}$Sr$_{l-x}$)TiO$_3$(BST) thin fi1ms with various Ba/Sr ratios were deposited on Pt(80nm)/SiO$_2$(100nm)/Si by RF magnetron sputtering. BST thin films which have x=0.6, 0.5, 0.4 were studied dielectric properties with temperature variation. The frequency was used from 100Hz to 1MHz for measuring dielectric constant. The measurement conditions of dielectric constant with Temperature Variation were 1KHz and 2$0^{\circ}C$. As a result, the dielectric constant of BST thin film was about 425 and loss factor was 0.013. Also, with increasing Temperature, the dielectric constants of BST thin films were gradually decreased.sed.

The electrical and physical characteristics of aluminum oxide and Pt thin films on it, deposited by reactive sputtering and DC magnetron sputtering respectively, were analyzed with increasing annealing temperature(400~80$0^{\circ}C$) by four point probe, SEM and XRD. Under $600^{\circ}C$ of annealing temperature, aluminum oxide had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin films and the resistivity of Pt thin films was improved. But these properties of aluminum oxide and Pt thin films on it were degraded over $700^{\circ}C$ of annealing temperature because aluminum oxide was changed into metal aluminum and then reacted to Pt thin films deposited on it. In the analysis of the thermal charateristics of Pt micro-heater fabricated on Si07/si substrate, the temperature of Pt micro-heater is up to 41$0^{\circ}C$ with the power dissipation 1.8 watts.

The (Sr$_{l-x}$.Ca$_{x}$)TiO$_3$(0.05$\leq$x$\leq$0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[$^{\circ}C$] in a reducing atmosphere($N_2$gas). After being fired in a reducing atmosphere, metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100[$^{\circ}C$] for 2 hours and cooled to room temperature. The grain boundary was composed of the continuous insulating layers. The capacitance changes slowly and almost linearly in the temperature region of -30~+85[$^{\circ}C$]. The capacitance characteristics appears a stable value within $\pm$10[%]. The conduction mechanism of the specimens observed in the temperature range of 25~125[$^{\circ}C$], and is divined into three regions haying different mechanism as the current increased: the region I below 230[V/cm] shows the ohmic conduction. The region II can be explained by the Poole-Frenkel emission theory, and the region III is dominated by the tunneling effect.ect.

Conventionally it is asummed that the microstrip line conductor has a rectangular cross-section. but the additive and substactive processes used to create conductors for PCBs produce a conductor of approximately Trapezoidal cross-section. For wide Strip line, the thickness and edge effect will be small since most of capacitance is parallel plate rather than fringing and we can ignore the cross-section. For narrow strip lines, the edge effect become immportant. So in this paper, we measure the chracteristic impedance of microstripline by Vector Analyzer and simulate the electromagnetic field of microstripline using finite element method with edge angle.

The surface of mica/epoxy paper(130${\mu}{\textrm}{m}$) is investigated with SEM(scanning electron microscope). SEM micrographs revealed that thermal aging has a strong influence on aged specimens. The mica/epoxy paper was exposed at 187$^{\circ}C$ in an ordinary electrical oven for 72hour. Stater windings from two generators were measured by tan delta(tan $\delta$)and maximum partial discharge(Qm). The values of tan $\delta$and Qm were fecund to be higher for new generator than old one. The insulation condition of mica/epoxy paper were measured by ac current and tan $\delta$. Test results are observed that the sound specimens are higher than those aged. Model bar coils subjected to various accelerated agings were evaluated by Qm.

The thermal impact of mica/epoxy paper(130${\mu}{\textrm}{m}$) is investigated using XRD, DSC and TGL X-ray diffraction(XRD) analysis was performed to know the position and structure of mica crystal in insulation materials. A differential scanning calorimeter(DSC) was used to measure glass transition temperature and excess enthalphy of the composite materials that had been subjected to thermal aging. The glass transition temperature(T$_{g}$) measured by DSC is observed at 95.43$^{\circ}C$ and 113.43$^{\circ}C$, respectively. The T$_{g}$ also increases with increased aging time. Measurements performed by TGA(thermogravimetric analysis) have showed that weight loss profile of sound specimens are lower than those aged.ged.

This paper describes dielectric characteristics of SF$_{6}$ gas stressed by the non-oscillating and oscillating impulse voltages in inhomogeneous fields disturbed by metallic protrusion. The breakdown voltage-time (V-t) characteristics and breakdown voltage-gas pressure (V-p) characteristics and their characteristics are statistically investigated with positive and negative very fast transient overvoltages. The experiments were carried out using a needle-to-plane gap geometry in the gas pressure ranges from 0.1 to 0.5 MPa. The gap separation gas 22 mm, and the needle-shaped protrusions were made of stainless steel 10 mm in length and 1.0 mm in diameter.r.

According to reports, it is impossible to make Ohmic Contact with high resistivity p type CdTe or CdZnTe semiconductor theoretically. But it is in need of making Ohmic Contact to fabricate semiconductor radiation detector By electroless deposition method using gold chloride solution, we made Ohmic Contact of Au and p-Cd$_{80}$Zn$_{20}$Te which grown by High Presure Bridgman Method in Aurora Technologies Corporation. We investigated the interface with Rutherford Backscattering Spectrometry and Auger electron spectroscopy. And we evaluated the degree of Ohmic Contact for the Au/CdZnTe interface by the I/V characteristic curve. As a result, we concluded that it showed excellent Ohmic Contact property by tunneling mechanism through the interface.e.

We fabricated the sample of u1tra thin lipid membrane(L-${\alpha}$-DLPC ) by LB methode. The $\pi$-A isotherm of the DLPC was measured at the air-water interface varying with the compressing speed and amounts of solutions for spreading. For good property of lipid monolayer film, it was necessary for the lower speed of compressing, and 40${\mu}\ell$ of solutions for spreading. The molecular arrangement of deposited films were evaluated by measuring the absorption, transmitance and intensity with the UV spectrophotometer. The Y-type multilayers prepared at 50mN/m showed weaker than Z-type. So we found building-up of structurally high quality LB films is essential to study properties of the films and to get reproducible data.

It is well known that water treeing is one of the main cause of breakdown in underground power cables, but water tree is not easy to observe. This aging phenomenon was resulted in effect of water and electric field and so on. In this paper, Distilled water was used as water electrode to observe the water treeing in XLPE(cross-linked polyethylene). To observe easily, sample was made of pallet types so water tree was able to show by microscope. As a result, electrical tree appears at niddle electrode tip which was concentrated electric field, but water tree was shown up different types that were appealed in total area of water electrode as well as water electrode tip.