Many electrochemical power devices such as solid state batteries and solid oxide fuel cell have been studied and developed for solving energy and environmental problems. Fuel cell is a modular, high efficient and environmentally energy conversion device, it has become a promising option to replace the conventional fossil fuel based electric power plants. This paper offers some new perspectives on fuel cell development and commercialization which come from the broad consideration of the commercialization efforts of the entire fuel cell industry.

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition(ALD). And we studied the electrical characterization of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3\;at\;350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Through TEM(Transmission Electron Microscope), XRD(X-ray Diffraction), capacitance-voltage(C-V) and current-voltage(I-V) analysis, the role of thin Hf metal layer for the better $HfO_2$/Si interface property was investigated.

The electrical characteristics of strained-SOI wafer were evaluated by using pseudo-MOSFET. The electrical characteristics of sSOI pseudo-MOSFET were superior to conventional SOI device. Moreover, the electrical characteristics were enhanced by forming gas anneal due to reduction of back interface trap density between substrate and buried oxide.

투명전극으로 사용되는 ITO는 우수한 전기적, 광학적 특성으로 인하여 널리 사용되고 있다. 하지만, ITO는 저온공정의 어려움과 ITO의 원료물질인 In의 수급이 불안정하여 원자재의 가격이 높고, 수소 플라즈마에 노출시 열화로 인한 광학적 특성의 변화가 문제점으로 지적되고 있다. 본 논문에서는 ITO 투명전극을 대체하기 위한 실험으로 Al 이 도핑된 ZnO(ZnO:Al) 박막을 상온에서 유리기판 위에 RF 마그네트론 스퍼터 법을 이용하여 제조하였다. 증착된 박막은 ITO물질을 대체하기 위한 투명전극으로의 응용을 위해 후 열처리를 실시하였다. 설정된 열처리 온도는 각각 400도와 300도로 설정하였고 열처리 시간에 따른 변화를 관찰하였다. 열처리된 시편은 각각 XRD, SEM, Hall, U/V 측정을 하여 변화를 관찰하였다.

The high efficiency and low cost solar cells in order to it applied a dopant pastes diffusion process. The dopant pastes diffusion process which it uses is easily applied in screen-printing solar cells output line. in this paper, it used the Ferro 99-038 phosphorus diffusion pastes source and it analyzed a sheet resistance and a uniformity degree. And it knew the quality of the sheet resistance which it follows in temperature and time condition. The temperature variable it let and it fixed the time in 7 minutes. It will be able to measure the sheet resistance of $40({\Omega}/sq),\;30({\Omega}/sq),\; 20({\Omega}/sq)$. also average uniformity of the sheet resistance was below 5%.

The etching characteristics of Zinc Oxide (ZnO) and etch selectivity of ZnO to $SiO_2\;in\;BCl_3$/Ar plasma were investigated. It was found that ZnO etch rate shows a non-monotonic behavior with increasing both Ar fraction in $BCl_3$ plasma, RF power, and gas pressure. The maximum ZnO etch rate of 50.3 nm/min was obtained for $BCl_3$ (80%)/Ar(20%) gas mixture. The plasmas were characterized using optical emission spectroscopy (OES) analysis measurements while chemical state of etched surfaces was investigated with X-ray photoelectron spectroscopy (XPS). From these data the suggestions on the ZnO etch mechanism were made.

At first the $Ba_{0.5}Sr_{0.5}TiO_3$-MgO powder with $B_2O_3-Li_2CO_3$ were made by the Sol-Gel method. The thick films of BST-MgO with $B_2O_3-Li_2CO_3$ were fabricated on the $Al_2O_3$ substrates coated with Pt by the screen printing method. The structural and dielectric properties of the BST-MgO thick film with $B_2O_3-Li_2CO_3$, addition were investigated. The structure of the BST-MgO with $B_2O_3-Li_2CO_3$ thick films were dense and homogeneous with no pores. The dielectric constant was increased and dielectric loss was decreased with increasing the sintering temperature.

내환원성을 가지는 (Ca,Sr)(ZrTi)$O_3$계 C0G 원료와 코어 쉘 구조를 가지는 $BaTiO_3$계 X7R 원료를 적용하여 고압용 적층 칩 캐패시터를 제작하여 내부전극 형상 및 원료에 따른 신뢰성 밑 전기적 특성을 연구하였다. C0G 특성의 원료는 X7R 원료에 비해 단위 두께당 내전압이 감소하는 경향이 적었으며 내전압 특성도 우수하게 나타났다. 또한, 내부 전극 설계에 있어 floating에 따른 영향은 C0G, X7R 특성 원료 모두 향상된 전기적 특성과 신뢰성을 가짐을 확인 할 수 있었다.

고체산화물연료전지(SOFC)는 연료가 갖는 화학에너지를 연소과정 없이, 공기와 $H_2$, CO, $CH_4$와 같은 환원성 가스를 공급받아 $700^{\circ}C-850^{\circ}C$에서 전기화학적 반응을 통하여 직접 전기를 얻는 방식이다. SOFC는 여러장의 단위 셀을 적층하여 스택을 구성하는데, 스택 제조시 단전지에 공급되는 산화, 환원 가스의 누출이나 흡입을 막기 위하여 밀봉재를 사용한다. 이러한 밀봉재는 완벽한 밀봉, 열에 대한 안정성, 충격에 견디는 저항성 등의 기계적인 특성 및 구성요소와의 최소한의 열팽창계수차를 가져야 한다. 따라서 본 연구에서는 $SiO_2-R_2O_3$-RO계에서 $R_2O_3$, RO의 변화에 따른 밀봉 특성 및 열팽창계수에 미치는 영향을 조사하였다.

Aerosol deposition(AD) method is a emerging technology for the room temperature deposition of the dielectric thin films with high quality. In this study, $Al_2O_3$ thin films were deposited by aerosol deposition method directly from raw powders. To get uniform and smooth film surface, Process parameters such as gas consumption rate, nozzle-substrate distance and vibration speed were optimized. From XRD results, $Al_2O_3$ thin films have the same crystal structures with starting powders. $Al_2O_3$ thin films also showed dense microstructure. Electrical properties of the thin films were also investigated.

$Eu^{2+}$-doped $Ca_2Si_5N_8$ was grown on Si(100) substrate using metal-organic deposition (MOD) method and post-annealed at $900^{\circ}C$ in various atmosphere. Luminescence properties of these thin films were investigated with variations of $Eu^{2+}$-doped concentrations and annealing atmosphere. Thin film was formed with clean surface and uniform thickness of about 72 nm. From the measurements of luminescence properties of thin films, film must be post-annealed in nitrogen or mixture of nitrogen and hydrogen atmosphere to emit a sufficient light. For $Ca_{1.5}Eu_{0.5}Si_5N_8$ thin film annealed at $900^{\circ}C$ in nitrogen atmosphere, excitation band from 380 to 420 nm was detected with the maximum intensity at 404 nm and two broad emission bands from 530 to 630 nm were observed. These broad excitation and emission bands must be attributed to the nitrogen incorporations into the films. From the results, $Ca_{2-x}Eu_xSi_5N_8$ thin film has probability for next generation thin film lighting applications such as light emitting diode (LED) or electro-luminescence (EL).

Ferroelectric $(Ba_{0.5}Sr_{0.5})TiO_3$ (BST) thin films of thickness 500nm were deposited on $LaAlO_3$, (LAO) substrates by at $800^{\circ}C$. BST films were characterized for structure using X-ray diffraction (XRD). The surface morphology and thickness of BST the films were characterized by atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM). We measured the dielectric properties at microwave frequencies (1~3 GHz) using a symmetrical stripline resonator with shorted ends and terahertz frequencies (0.2~2.5 THz) using a time-domain terahertz spectroscopy. The real and imaginary parts of the complex dielectric constant of the BST thin films on LAO substrates were in agreement with those previously reported.

In a device structure of ITO/tris(8-hydroxyquinoline) aluminum $(Alq_3)$/Al device, We investigated an the electrical characteristics of Organic Light-Emitting Diodes (OLEDs) depending on the hole-size of boat. The device was manufactured using a thermal evaporation under a base pressure of $5{\times}10^{-6}$ [Torr]. The $Alq_3$ organics were evaporated to be 100 [nm] thick at a deposition rate of $1.5[{\AA}/s]$, and in order to investigate the optimal surface roughness of $Alq_3$, the $Alq_3$ was thermally evaporated to be 0.8 [mm], 1.0 [mm], 1.5 [mm], and 3.0 [mm] as a hole-size of the boat respectively. We found that when the hole-size of the boat is 1.0 [mm], luminance and external quantum efficiency are superior.

Built-in voltage in organic light-emitting diodes was studied using modulated photocurrent technique ambient conditions. A device was made with a structure of anode/$Alq_3$/cathode to study a built-in voltage. An ITO was used as an anode, and $Li_2O$/Al was used as a cathode. From the bias voltage-dependent photocurrent, built-in voltage of the device is determined. The applied bias voltage when the magnitude of modulated photocurrent is zero corresponds to a built-in voltage. Built-in voltage in the device is generated due to a difference of work function of the anode and cathode. It was found that for 0.5nm thick $Li_2O$ layer built-in voltage is the higher than the others. It indicates that a very thin alkaline metal compound $Li_2O$ lowers an electron barrier height.

In PDP industry, the dielectrics and barrier ribs have been required with low dielectric constant, low melting point and Pb-free composition due to the low power consumption, low signal delay time and the environment restriction. We were studied with $B_2O_3-Al_2O_3$-SrO glass systems about optical, thermal and dielectric properties. The glass forming region of the $B_2O_3-Al_2O_3$-SrO glass systems was narrow due to the amount of the glass former $(B_2O_3)$. The glass transition temperature (Tg) of the glasses was at $550{\sim}590^{\circ}C$. The glasses have 6~8 for the dielectric constant. Furthermore, the transmittance of the glasses was over 80% on the range of the visible ray. From the results, the glasses of the $B_2O_3-Al_2O_3$-SrO glass systems should enable to be a good candidate of the PDP devices for information display with low dielectric constant. The aim of this study is to give a fundamental result of new glass system for low dielectric constant in the information display.

최근, LCD-TV의 대형화가 경쟁적으로 진행되고 있으며 대형 BLU를 제작하기 위해서는 백라이트의 직경을 대구경 화하고, 또한 고화질을 이루기 위하여 휘도특성을 개선시켜야 한다. 통상적으로 백라이트에 사용되는 고압방전은 환경이 증가할수록 휘도가 저하하는 특성을 나타내므로 대화면 LCD-TV를 개발하는데 문제점을 갖고 있다. 또한, LCD-TV 백라이트로 가장 많이 사용하는 CCFL은 병렬로 구동할 수 없어 다수의 트랜스포머가 필요하여 전체적인 BLU가격을 상승시키는 요인이 되고 있어 병렬구동이 가능한 EEFL을 백라이트로 사용하고자 하는 노력이 진행되고 있으나 CCFL에 비하여 휘도가 낮아 사용이 제한되고 있는 상황이다. 본 연구에서는 고휘도의 병력구동이 가능한 새로운 EEFL을 개발하였으며, 그 특성을 분석한 결과 기존 EEFL에 비하여 40%이상의 광효율을 증가시키고, 대구경에서 CCFL보다 2배 기존의 EEFL에 비하여 3배 이상의 휘도를 증가시킬 수 있으며, 동시에 병렬구동이 가능한 고휘도 외부전극램프를 개발하였다.

The roll printing technique is the updated technology which will substitute a existing lithography technique for a field of the display such as LCD, PDP, OLED and FED etc. Currently, the patent trend analysis about research and development of the different enterprises are demanded, because it is forecast that the dominion of display market will be exchanged by research and development result of roll-printing technique. In this presentation, it is analyzed on patent trends applied the roll printing technique for a field of the display such as LCD, PDP, OLED and FED etc in Korea and Japan by the various methods.

$R_2O_3$(R=Bi, B)-RO(R=Ba, Zn)를 주성분으로 하는 Pb-free유리프리트에 높은 굴절률을 가지고 있는 $TiO_2$ filler를 첨가하여 PDP용 백색유전체를 제조하였다. $TiO_2$ type, 함량에 따른 백색유전체로의 반사율 및 유전 특성을 조사하였다. 백색유전체를 소성한 결과 rutile과 anatase를 중량비로 75:25로 혼합하여 $520^{\circ}C$에서 소성한 경우 밀도 및 수축율의 변화를 거의 나타나지 않았다. 그러나 $TiO_2$함량이 15wt.%를 혼합하여 첨가했을 경우 반사율은 높고 접합특성 또한 우수하였다. 또한, 유전상수는 $TiO_2$첨가량이 증가함에 따라 증가하는 경향을 나타내었다.

This paper reports the characteristics of piezoelectric microspeakers that are audible in open air with high quality piezoelectric AlN thin film according to the materials properties. When we use a tensile-stressed silicon nitride diaphragm as a supporting layer, the Sound Pressure Level (SPL) is relatively small. However, the SPL of the fabricated microspeakers that have compressive-stressed composite diaphragm show higher output pressure than those of tensile-stressed diaphragm. It produces more than 60dB from 100Hz to 15kHz and the highest SPL is about 100dB at 9.3kHz with 20 Vpeak-to-peak sinusoidal input biases and at 10 mm distances from the fabricated microspeakers to the reference microphone.

원자층 증착(Atomic Layer Deposition: ALD) 방법은 반응물질들을 펄스형태로 챔버에 공급하여 기판표면에 반응물질의 표면 포화반응에 의한 화학적 흡착과 탈착을 이용한 박막증착기술이다. ALD법은 기존의 화학적 기상증착(Chemical Vapor Deposition: CVD)과 달리 자기 제한적 반응(self-limiting reaction) 에 의하여 반응가스가 기판 표면에서만 반응하고 가스와 가스 간에는 반응하지 않는다. 따라서 박막의 조성 정밀제어가 쉽고, 파티클 발생이 없으며, 대면적의 박막 증착시 균일성이 우수하고, 박막 두께의 정밀 조절이 용이한 장점이 있다. 이러한 ALD 방식으로 3차원의 반도체 장치 구조물에 산화막 등을 형성하는 공정에서 중요한 요소 중의 하나는 전구체의 충분한 공급이다. 따라서 증기압이 높은 전구체를 선호하는 경향이 있다. 그러나 증기압이 낮은 전구체를 사용할 경우, 공급량이 부족하여 단차 도포성(step coverage)이 떨어지는 문제가 있다. 원자층 증착 공정에서 전구체를 충분히 공급하기 위해전구체 온도를 증가시키거나 전구체의 공급시간을 늘리는 방법을 사용한다. 그러나 전구체 온도를 상승시키는 경우, 전구체의 변질이나 수명을 단축시키는 문제점을 발생시킬 수 있으며. 전구체를 충분히 공급하기 위하여 전구체의 공급시간을 늘이는 방법을 사용하면, 원하는 박막을 형성하기 위하여 소요되는 공정시간과 전구체 사용량이 증가된다. 본 논문에서는 이러한 문제점을 해결하기 위해 반응기 안에서 전구체 노출 시간을 조절하는 새로운 ALD 공정을 소개한다. 특히 이러한 기술을 적용하면 나노튜브를 성장시키는데 매우 유리하다. 본 연구에서 전구체 노출 시간을 조절하기 위하여 사용된 ALD 장비는 Lucida-D200-PL (NCD Technology사)이며 (TEMA)Zr와 H2O를 사용하여 ZrO2 나노튜브를 폴리카보네이트 위에 성장시켰다. 전구체의 노출 시간은 반응기의 Stop 밸브를 이용하여 조절하였으며, SEM, TEM 등을 이용하여 나노튜브의 균일성과 단차피복성 등의 특성을 관찰하였다. 그 결과 전구체 노출시간을 조절함으로써 높은 종횡비를 갖는 나노튜브를 성장 시킬 수 있음을 확인하였다. 또한 낮은 증기압을 가지는 전구체를 이용하여도 우수한 특성의 나노튜브를 균일하게 성장시킬 수 있었다.

$SnO_2$ nanowires are used at the nanoscale level for the electrical transduction of the gas interaction with these sensing materials. We report on a study of high sensitivity and fast NOx gas sensor. We focused on improving the response time and refresh time by growth nanowires on the trench structure of Si substrate as air path. To improve refresh time we applied the trench structure with depth of $10\;{\mu}m$ by the inductively coupled plasma reactive ion etching(ICP-RIE). The fabricated device was measured at temperature of $200{\sim}300^{\circ}C$. The sensor exhibit ultra-fast and reversible electrical response (t90% ~4 s for response and ~3 s for recovery).

티타네이트 나노튜브는 10 nm 이내의 내경과 0.74nm 정도의 크기를 갖는 층상 구조를 이루고 있어 높은 비표면적을 이용한 수소의 물리적 흡착뿐만 아니라 Ti-H 결합에 의한 화학적 흡착이 동시에 가능하다. 따라서 본 연구에서는 전이금속 원소 중 Ni을 첨가한 티타네이트 나노튜브를 합성하고 수소저장특성을 평가하고자 하였다. 티타네이트 나노튜브는 저온균일침전법으로 제조된 침상형의 $TiO_2$ 분말을 출발원료로 염화니켈을 $TiO_2$의 질량 비로 1~5wt% 첨가하고 10 M의 NaOH 수용액에서 일정시간 혼합한 후 $150^{\circ}C$에서 24시간 수열합성하였다. 합성된 분말의 입자형상 및 결정상은 전자현미경과 X-선 회절 시험을 이용하여 분석하였고, 입자의 비표면적은 액체질소흡착법을 이용하여 측정하였다. 전자현미경 관찰결과 이온교환 전후의 입자형상은 큰 변화가 없었던 반면 이온교환 후 입자의 비표면적이 30% 이상 증가함을 확인하였다. 특히 Ni의 도핑량이 증가함에 토라 입자의 비표면적도 함께 증가하였으며, 전자현미경 관찰결과 더욱 미세한 나노튜브가 형성됨을 확인할 수 있었다. P-C-T를 이용하여 측정한 순수한 티타네이트 나노튜브의 수소저장량이 20기압에서 1.2 wt% 정도로 측정된 반면 Ni이 5 wt% 첨가된 티타네이트 나노튜브의 경우 같은 압력에서 1.6 wt%를 나타내었다.

SiO and graphite composite has been prepared by adopting high energy ball milling technique. The anode material shows high initial discharge and charge capacity values of 1138 and 568 mAh/g, respectively. Since the materials formed during initial discharge process the nano silicon/$Li_4SiO_3\;and\;Li_2O$ remains as interdependent, it may be expected that the composite exhibiting higher amount of irreversible capacity$(Li_2O)$ will deliver higher reversible capacity. In this study, pretreatment method of constant current-constant voltage (CC-CV) Provided high coulombic efficiency of SiO/C composite electrode removing the greater part of irreversible capacity.

One of the major problems faced by the overhead conductor engineer is in the estimation of the loss in strength of conductors caused by long and short term exposures over a period years to elevated temperature. From the standpoint that the life of conductor is influnced by softening of Al wire, the life assessment of conductor was carried out. The aluminum components will be affected most in majority of conductors. The steel core if present will not be affected by temperatures below $225^{\circ}C$. The detailed description will be presented in the text.

A CMP Process has many factors that affect result of a polished wafer. Dominant factors are velocity, pressure and temperature in process. A pad profile is also considered as affecting factor of CMP. Accoding to variation of a pad profile, the each pan of a wafer is differently pressured. It appears to affect the uniformity of a wafer. A pad profile varies as a swing arm conditioner which have been ordinarily used in industry. A swing arm conditioner has several sectors in its swing path. This study aims that a wafer get a good uniformity as swing arm conditioner's path on pad is analyzed and simulated. Through the simulation, tendency of pad profile after conditioning will be predicted and the result of simulation compared with the result of experiment. The optimized pad profile would be made by to vary swing arm's velocity on each sector. In order to maintain the optimized profile, conditioner design or swing arm's velocity should be changed and designed.

최근 반도체 소자의 고집적화와 나노 (nano) 크기의 회로 선폭으로 인해 기존에 사용되었던 텅스텐이나 알루미늄 금속배선보다, 낮은 전기저항과 높은 electro-migration resistance가 필요한 Cu 금속배선이 주목받게 되었다. 하지만, Cu CMP 공정 시 높은 압력으로 인하여 low-k 유전체막의 손상과 디싱과 에로젼 현상으로 인한 문제점이 발생하게 되었다. 본 논문에서는, $KNO_3$ 전해액의 농도가 Cu 표면에 미치는 영향을 알아보기 위해 Tafel Curve와 CV (cyclic voltammograms)법을 사용하여 전기화학적 특징을 알아보았고 scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray Diffraction (XRD) 분석을 통해 금속표면을 비교 분석하였다.

최근 DRAM 소자 내에서 Ruthenium (Ru) 은 높은 화학적 안정성, 누설전류에 대한 높은 저항성, 고유전체와의 높은 안정성등과 같은 특성으로 인해 금속층-유전막(insulator)-금속층 캐패시터에 대한 하부전극으로 각광받고 있다. 일반적으로 Ru은 화학적으로 매우 안정하여 습식 식각으로 제거하기 어려우며, 이로인해 건식 식각을 이용하여 Ru을 제거하는 것이 널리 통용되고 있다. 하지만 칵 캐패시터의 분리를 위해 Ru을 건식 식각할 경우, 유독한 $Ru0_4$ 가스가 발생할 수 있으며 Ru 하부전극의 탈균일한 표면과 몰드 산화막의 손실을 유발할 수 있다. 이로인해 각 캐패시터간의 분리와 평탄화를 위해 CMP 공정이 도입되게 되었다. 이러한 CMP 공정에 공급되는 슬러리에는 부식액, pH 적정제, 연마입자등이 첨가되는데 이때 연마입자가 응집하여 슬러리의 분산 안정성 저하에 영향을 줄 수 있다. 그리하여 본 연구에서는 Ru CMP Slurry에서의 surfactant와 같은 첨가제에 따른 zeta potential, particle size, sedimentation의 분석을 통해 slurry 안정성에 대란 영향을 살펴보았다. 또한 선택된 surfactant가 첨가된 Ru CMP Slurry를 제조하여 Ru의 removal rate와 TEOS에 대한 selectivity를 측정해 보았다.

This paper compared wired Acoustic Emission (AE) signals with wireless AE signals. According to the material and process condition, each process signal has distinguishable characteristic to show each removal phenomenon. Therefore, wired and wireless AE sensors having different bandwidth are complementary for CMP process monitoring. Especially, the AE sensor was used to investigate abrasive and molecular-scale phenomena during CMP process, which was compatible to acquire high level frequency. In experiment, wireless AE system was used to get signals in rotary system, using bluetooth. But, it is possible to acquire only RMS signals, which can not analyze abrasive and molecular-sale phenomena. Second, wired AE system was installed using mercury slip-ring, which is suitable not only for rotation equipment but also for acquiring original signals. The acquired signals were analyzed by FFT for understanding of abrasive and molecular revel phenomena in CMP process, finally, we verified that two types of AE sensor with different bandwidth were complementary for CMP process monitoring.

반도체 소자의 고집적화, 미세화 화로 인해 반도체의 동작속도를 증가시키기 위하여 Cu를 이용한 금속배선이 주목받게 되었으나, 높은 압력으로 인한 보은 Cu 영역에서 과잉 디슁 현상과 에로젼을 유도하고 반도체 웨이퍼위의 low-k 물질에 손상을 줌에 따라 메탈라인 브리징과 단락을 초래할 있어, Cu의 단락인 islands를 남김으로서 표면 결항을 제거하지 못한다는 단점을 가지고 있었다. 그래서 이러한 문제점을 해결하기 위하여 기존의 CMP에 전기화학을 결합시킴으로서 낮은 하력에서의 Cu평탄화를 달성할 수 있는 ECMP (electrochemical mechanical polishing)기술이 필요하게 되었다. 따라서 본 논문에서는 전기화학적 기계적 연마(ECMP)작용을 위해, I-V 특성 곡선을 이용하여 패시베이션 막의 active, passive, transient, trans-passive영역의 전기화학적 특성을 비교 분석하였으며, Cu막의 표면 형상을 알아보기 위해 scanning electron microscopy (SEM) 측정과 energy dispersive spectroscopy (EDS)와 X-ray Diffraction (XRD) 분석을 통해 금속 화학적 조성을 조사하였다.

결정질 실리콘 웨이퍼의 텍스쳐링과 도핑은 태양전지의 효율을 결정하는 매우 중요한 요인이다. 높은 효율을 갖는 태양전지 설계를 위해 PC1D를 이용하여 텍스쳐링 사면체의 폭 및 각도, 베이스 면저항 및 농도를 조절하였다. 최적화 결과, 텍스쳐 피라미드의 폭은 $2{\sim}4{\mu}m$, 각도는 $79^{\circ}$ 베이스 면저항 $100{\Omega}/{\Box}$, 도핑 농도 $1{\times}10^{19}cm^{-3}$에서 15.06%의 변환효율을 얻을 수 있다.

최근 GaN계 LED를 대체할 만한 물질로 주목받고 있는 ZnO는 단결정 박막성장의 어려움, 동일접합 LED 소자구현을 위한 p-ZnO 성장의 어려움 3원계 합금제작의 어려움 등으로 소자제작에 있어 고전을 하고 있다. 특히 이러한 문제점을 극복하고자 하는 방안으로 양자 제한 효과, 탁월한 결정성, self-assembly, internal stress 등의 새로운 기능성을 지닌 ZnO 나노구조가 제시되었다. 하지만 나노구조를 이용한 다이오드 제작에서도 금속전극의 접합이라는 문제의 벽에 가로막혀 있다. 본 실험에서는 자체 개발된 MOCVD 장비를 이용한 일차원 ZnO 나노선을 성장한 이후 연속적으로 박막을 성장하여 금속전극의 접합을 시도하였다. 이종접합구조 뿐만 아니라 일차원 및 이차원 구조의 복합구조는 일반 다결정 박막보다 결정성에서 우수한 특성을 보였으며, 다이오드 제작시에 높은 효율을 보였다.

In this paper, the p-channel poly Si thin-film transistors (Poly-Si TFT's) using formed by solid phase crystallization (SPC) on glass substrate were fabricated. And we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's to indicate non-volatile memory (NVM) effect. Poly-Si TFT is investigated by measuring the electrical properties of poly-Si films, such as I-V characteristics, on/off current ratio. NVM characteristics is showed by measuring the threshold voltage change of TFT through I-V characteristics.

ZnO 박막이 성장된 Si기판을 이용하여 Thermal evaporation을 사용하여 온도에 따라 합성된 1-D의 구조의 ZnO nanorods의 형상과 특성에 대하여 연구를 하였다. 합성온도는 $700^{\circ}C{\sim}900^{\circ}C$를 사용하였고 온도가 낮아짐에 따라 Vertical한 1-D ZnO가 합성이 되는 것을 알 수 있었다. 특히, $700^{\circ}C$에서 합성된 1-D ZnO는 ~100nm의 폭을 가지고 800nm의 길이의 Nanorods로 성장이 되는 것을 알 수 있었고, 상온 PL측정을 통해 온도가 증가함에 따라 O 결핍 또는 Zn의 과잉에 의한 Deep level emission이 증가하는 것을 알 수 있었다.

Polystyrene-block-polymethyl methacrylate (PS-b-PMMA) can pattern nanoscale structures over large areas. However these patterns have a short-range order. These short-range order limits their utility in some applications. Consequently, we have to overcome this limitation of block-copolymer. In this study we added a electrical field to the standard block-copolymer patterning method for long-range ordered arrays of nanostructures. This method is conformed by annealing a block copolymer with applied voltages. It is very simple method that do not have any additional hour. In this reason it can be applied easily for other nanostructure fabrications. This method opens up a new route to the controlled phase separation of block copolymers with precise place of the nanostructures.

Microstructure and surface roughness of the sensing materials should be improved to use them in advanced sensor applications because the uneven surface roughness degrades the light reflection, pattern resolution, and devices performance. Chemical mechanical polishing (CMP) processing was selected for improving the surface roughness of $CeO_2$ which is one of the well known materials for the oxygen gas sensors. Surface roughness and removal rate of spin coated $CeO_2$ thin films were examined with a change of CMP process parameters such as down force and table speed. The optimized process condition, reflected by the surface roughness with the hillock-free surface as well as the excellent removal rate with the good uniformity, was obtained. The effects of the improved surface roughness on the sensing property of $CeO_2$ thin films were also confirmed. The improved sensitivity of $CeO_2$ thin films for oxygen sensors were obtained after CMP process by the improved surface characteristics. Therefore, we conclude that sensing property of $CeO_2$ thin film is strongly dependent on the surface roughness of $CeO_2$ thin films by using CMP process.

Lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for ferroelectric random access memory (FRAM) due to its higher remanant polarization and the ability to withstand higher coercive fields. We first applied the damascene process using chemical mechanical polishing (CMP) to fabricate the PZT thin film capacitor to solve the problems of plasma etching including low etching profile and ion charging. The $0.8{\times}0.8\;{\mu}m$ square patterns of silicon dioxide on Pt/Ti/$SiO_2$/Si substrate were coated by sol-gel method with the precursor solution of PZT. Damascene process by CMP was performed to pattern the PZT thin film with the vertical sidewall and no plasma damage. The polarization-voltage (P-V) characteristics of PZT capacitors and the current-voltage characteristics (I-V) were examined by change of process parameters. To examine the CMP induced damage to PZT capacitor, the domain structure of the polished PZT thin film was also investigated by piezoresponse force microscopy (PFM).

This study investigated the effect of $H_2$ upon the growth of CNTs by changing the ratios of $H_2$ to Ar during the growth using $C_2H_2$. With higher contents of $H_2$ in Ar, CNTs became longer and thinner, resulting in their higher aspect ratios.

To make cost-effective solar cells, We have to use low cost material or make short process time or high temperature process. In solar cells, formation of emitter is basic and important technique according to build-up P-N junction. Diffusion process using spin-on dopants has all of this advantage. In this paper, We investigated n+ emitter formation spin-on dopants to apply crystalline silicon solar cells. We known variation of sheet resistance according to variation of temperature and single-crystalline and multi-crystalline silicon wafer using Honeywell P-8545 phosphorus spin-on dopants. We obtain uniformity of sheet resistance within 3~5% changing RPM of spin coater.

Multicrystalline silicon(mc-Si) solar cells are steadily increasing their share of the PV market due to the lower material costs. However, commercial mc-Si solar cells have lower efficiency than singlecrystalline silicon solar cells. To improve efficiency of mc-Si solar cells, it is important to reduce optical losses from front surface reflection. Isotropic etching with acid solution based on hydrofluoric acid(HF) and nitric acid$(HNO_3)$ is one of the promising methods that can reduce surface reflectance for mc-Si solar cells. Anisotropic etching is not suitable for mc-Si because of its various grain orientations. In this paper, we isotropically etched mc-Si using acid solution. After that, etched surface was observed by Scanning Electron Microscope(SEM) and surface reflectance was measured. We obtained 29.29% surface reflectance by isotropic etching with acid solution in wavelength from 400nm to 1000nm for fabrication of mc-Si solar cells.

Ni 단일박막과 Ni-Zr 합금박막을 단결정 Si 기판위에 증착한 후 RTP를 이용하여 Ni 실리사이드 형성반응을 관찰하였고, $500^{\circ}C$에서 형성된 Ni 실리사이드 박막에 $600^{\circ}C,\;650^{\circ}C$에서 후속 열처리 공정을 수행하여 열 안정성을 평가하였다. RTP를 이용하여 실리사이드를 형성할 경우, Ni/Si 계의 경우, 고온 열처리에서 $NiSi_2$ 결정립의 과대 성장 및 단락이 발생하였지만, Ni-Zr/Si 계의 경우 첨가된 내열금속 원소가 NiSi에서 $NiSi_2$ 로의 상전이와 핵생성을 지연시켜 Ni 실리사이드 박막의 열 안정성 개선 효과를 확인하였다.

We fabricated strained-SOI(sSOI) n-/p-MOSFETs and investigated the electron/hole mobility characteristics. The subthreshold characteristics of sSOI MOSFETs were similar to those of conventional SOI MOSFET. However, The electron mobility of sSOI nMOSFETs was larger than that of the conventional SOI nMOSFETs. These mobility enhancement effects are attributed to the subband modulation of silicon conduction band.

Poly-Si Schottky barrier Thin Film Transistor (SB-TFT) is manufactured with erbium silicided source/drain. High quality poly-Si film was obtained by crystallizing the amorphous Si film with Excimer laser annealing (ELA) method. The fabricated poly-Si SB-TFT devices showed low leakage current and large on/off current ratio. Moreover, the electrical characteristics were considerably improved by 3% $H_2/N_2$ gas annealing, which is attributed to the reduction of trap states at the grain boundaries and interface trap states at gate oxide/poly-si channel.

In this paper, we suppose that the 1-dimensional photonic crystal using holography lithography. We used Ag doped amorphous AsGeSeS which belongs in the chalcogenide materials have sensitive photoluminescence property. The purpose of this experiment is the process to complete 3-D photonic crystal after making 2-D photonic crystal. The lattice formation was made an observation by irradiating He-Ne laser with the AsGeSeS film leaned obliquely. Then, by measuring formed diffraction beam, the diffraction lattice was calculated.

To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.9501 eV - ($8.79{\times}10^{-4}$ eV/K)$T^2$/(T + 250 K). After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C\;and\;420^{\circ}C$, respectively. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd},\;V_{Se},\;Cd_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4$/GaAs did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

Sn-filled and Ni-doped $CoSb_3$ skutterudites were prepared by encapsulated induction melting, and their filling and doping effects on thermoelectric properties were investigated. Single phase ${\delta}-CoSb_3$ was successfully obtained by encapsulated induction melting and subsequent heat treatment at 823K for 5 days. Nickel atoms acted as electron donors by substituting cobalt atoms. Thermoelectric properties were remarkably improved by Sn filling and Ni doping.

A poly(vinylidene fluoride-trifluoroethyene) (P(VDF-TrFE)) copolymer thin film having ${\beta}$ phase was prepared by sol-gel method. The electrical properties of the film were studied to evaluate the possibility for appling to a ferroelectric random access memory. In order to characterize its electrical properties, we produced a MFS (metal-ferroelectric-semiconductor) structure by evaporation of Au electrodes. The C-V (capacitance-voltage) measurement revealed that the Au/P(VDF-TrFE)/Si structure with a 4 wt% film had a memory window width of about 0.5V for a bias voltage sweep of 1V.

반도체 소자가 초고집적화 되어감에 따라 반도체 공정에서 선폭은 줄어들고 박막은 다층화 되어가고 있다. 이와 같은 제조 공정 하에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 이 논문에서는 Tungsten - Carbon - Nitrogen (W-C-N)에 Boron (B)을 첨가하였고, Boron 타겟 power을 조절하여 다양한 조성을 가지는 W-B-C-N 확산방지막을 제작하여 각 조성에 따른 증착률을 조서하였고 $1000^{\circ}C$까지 열처리하여 그 비저항을 측정하여 각 특성을 확인하였다.

This paper presents the mechanical properties of 3C-SiC thin film according to 0, 7, and 10% carrier gas $(H_2)$ concentrations using Nano Indentation. When carrier gas $(H_2)$ concentration was 10%, it has been proved that the mechanical properties, elastic modulus and hardness, of 3C-SiC are the best of them. In the case of 10% carrier gas concentration, Young's modulus and Hardness were obtained as 367 GPa and 36 GPa, respectively. When the surface roughness according to $H_2$ concentrations was investigated by AFM (atomic force microscope), when $H_2$ concentration was 10%, the roughness of 3C-SiC thin was 9.92 nm, which is also the best of them. Therefore, in order to apply poly 3C-SiC thin film to MEMS applications, $H_2$ concentration's rate should increase to obtain better mechanical properties and surface roughness.

An anomalous positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}Na_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The effect of $Nb_2O_5$ content on the electrical properties and the microstructure of (1 - x) $BaTiO_3-x\;(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) ceramics made using a conventional mixed oxide process also has been studied. The Curie temperature was obviously increased with the increasing of $(Bi_{0.5}Na_{0.5})TIO_3$ content. The Nb - doped BNT ceramics (x=0.01) display low resistivity values of $10^{1{\circ}}C-10^{2{\circ}}C$ ohm.cm at room temperature and the Curie Temperature of $T_c=160^{\circ}C$.

We present a mechanism for stress-induced interface degrdadations through ab initio pseudopotential calculations. We find that N interstitials at the interface create various defects levels in the Si band gap, which range from the mid gap to the conduction band of Si. The level positions are dependent on the configuration of oxygen toms around the N interstitial. On the other hand, the mid-gap level caused by Pb center is possibly removed by substitution of a N atom for a threefold-coordinated Si atom in the defect. Our calculations explain why interface state generations are enhanced in Si oxynitride, especially near conduction band edge of Si, although densities of Pb center are reduced.

In this paper, the dependence of electrical characteristics of Silicon-$Al_2O_3$-Nitride-Oxide-Silicon (SANOS) memory cell transistors and program speed, reliability of memory device on interface trap between Si substrate and tunneling oxide was investigated. The devices were fabricated by the identical processing in a single lot except the deposition method of the charge trapping layer, nitride. In the case of P/E speed, it was shown that P/E speed is slower in the SONOS cell transistors with larger interface trap density by charge blocking effect, which is confirmed by simulation results. However, the data retention characteristics show much less dependence on interface trap. Therefore, to improve SANOS memory characteristic, it is very important to optimize the interface trap and charge trapping layer.

Low voltage organic TFTs (OTFTs) and ZnO based TFTs (<5V), utilizing room temperature deposited $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin films were recently reported, pointing to high-k gate insulators as a promising route for realizing low voltage operating flexible electronics. $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ (BZN) thin film is one of the most promising materials for gate insulator because of its large dielectric constant (~60) at room temperature. However their tendency to suffer from relatively high leakage current at low electric field (>0.3MV/cm) hinder the application of BZN thin films for gate insulator. In order to improve leakage current characteristics of BZN thin film, we mixed 30mol% MgO with 70mol% BZN and their dielectric and electric properties were characterized. We fabricated field-effect transistors with transparent oxide semiconductor ZnO serving as the electron channel and high-k $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ as the gate insulator. The devices exhibited low operation voltages (<4V) due to high capacitance of the $(Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7)_{0.7}(MgO)_{0.3}$ dielectric.

In this paper, we analyzed the reset current variation of PRAM device with top electrode using the 3-D finite element analysis tool. As thickness of phase change material thin film decreased, reset current caused by phase transition highly increased. Joule's heat which was generated at the contact surface of phase change material and bottom electrode of PRAM was given off through top electrode to which was transferred phase change material. As thermal conductivity of top electrode decreased, heating temperate was increased.

Transferring patterns from mold to PDMS stamp is very useful technology in micro-fabrication, complex and three-dimensional structures. First experimentation, mold's patterns wens transferred to PDMS stamp. Comparing with PDMS stamp and Mold, patterns were transferred about 97.9%. Second experimentation, PDMS stamps were made several times by only one mold, scale and distance of transferred patterns were uniform about 89.3%. We proved that transferring patterns from mold to PDMS stamp is accurate. The uniformity of stamps is the same after mold was used several times. Transferring patterns from mold to PDMS stamp has uniformity and accuracy, it will be useful technology.

In order to characterize an electrical conductivity of ${\lambda}$-DNA by relative humidity, I-V characteristics through DNA on Au electrode with $1{\mu}m$ gap were measured as a function of the relative humidity. The electrical conductivity increased and the resistance decreased with an increase of humidity. The maximum effect of the humidity on the electrical property of DNA was obtained with the range from 43 to 82%. The hysteresis loop in I-V characteristics of DNA was disappeared above 92% of the humidity while the applying voltage was changed.

Nanometer-scaled polymer beads, such as polystyrene beads, were used as nanometer fabrication materials due to their some advantages such as self-assembled monolayer, nanometer scaled size and excellent compatibility with silicon based devices. Thus, the investigation on these properties of polymer beads was required. It is difficult to control the array of polystyrene beads on silicon substrate. In this study, we investigated the condition of selective array of polystyrene beads on nanometer-scaled hydrophilic surface which was obtained by APS coating. A tilting method was used to array the polystyrene beads selectively on the substrate. The polystyrene beads could be arrayed selectively by this method. From these results, we verified that there are possibilities to fabricate unique tools for the nanometer-scaled electrical devices.

M-DNAs based on zinc and cobalt ions were formed at the conditions of $26^{\circ}C$, 76% humidity, atmosphere, and pH 8.0. Some process parameters in synthesis of M-DNA such as synthetic temperature, concentration of metal ions, and synthetic time were varied and the electrical properties were investigated by changes of the parameters. The electrical properties of M-DNA showed the dependences on synthetic temperature, concentration of metal ions and synthetic time. The I-V characteristics rapidly increased with each increase of the parameters.

In order to investigate the electrical properties of Hf-silicate as a function of annealing temperature, Hf-silicate deposited by atomic layer deposition (ALD) was studied. After Hf-silicate film deposition, annealing was proceeded at $500^{\circ}C\;and\;700^{\circ}C$. The hysteresis of C-V curves and trapping charge densities were decreased after annealing process. As annealing temperature became higher from $500^{\circ}C\;to\;700^{\circ}C$, the capacitance equivalent thickness (CET) was increased from 1.66 nm to 1.76 nm and the leakage current at -1 V was decreased from $1.70{\times}10^{-4}\;to\;5.68{\times}10^{-5}\;A/cm^2$.

Pyrrole and DNA can be used for synthesis of conducting nanowires. Protonated pyrrole and negatively charged DNA are absorbed by electrostatic interaction. The level of absorbance is related to pH of pyrrole. Therefore, DNA immobilized and aligned on the 3-aminopropyltrimethoxysi1ane (APTES) modified Si surface. Positive pyrrole monomers was deposited on aligned DNA for the synthesis of nanowire in various pH condition. And polypyrrole nanowires were synthesized by polimerization with ammonium persulfate (APS). These polypyrrole nanowires were measured by AFM, and then we found optimal pH level for the synthesis of nanowires.

Silicon nitride (SiN) 박막을 플라즈마 응용화학기상법을 이용하여 증착하였다. SiN박막의 전하밀도는 일반화된 회귀 신경망과 유전자 알고리즘을 이용하여 모델링하였다. PECVD 공정은 Box Wilson 실험계획표를 이용하여 수행하였다. $SiH_4$ 유량변화에 따른 온도의 영향은 미미하였다. 그러나, 저 전력에서의 온도증가 (또는 저온에서의 전력의 증가)에 따라 전하밀도는 급격히 상승하였으며, 이는 [N-H]의 증가에 기인하는 것으로 해석되었다. $SiH_4$ 유량의 증가 (또는 고온에서의 전력의 증가)에 따라 전하밀도는 감소하고 있으며, 이는 [Si-H]의 증가에 기인하는 것으로 이해된다.

Hole mobility characteristics of single surface channel and dual channel Si/SiGe structure are compared, where the former one consists of a relaxed SiGe buffer layer and a tensile strained Si layer on top, and for dual channel structure a compressively strained SiGe layer is inserted between them. Due to the difference of hole mobility enhancement factors of layers between them, hole mobility characteristics with respect to the Si cap thickness shows the opposite tend. Hole mobility increases with thicker Si cap for single channel structure, whereas it decreases with thicker Si cap for dual channel structure.

PRAM (Phase Change Random Access Memory)은 상변화 물질의 비저항 차이를 이용한 메모리 소자로 차세대 비휘발성 메모리로 주목받고 있다. 현재 상변화 물질로 사용되고 있는 $Ge_2Sb_2Te_5$ 박막은 결정질 상태에서 저항이 낮아 RESET 동작에서 많은 전력이 소비되고 메모리의 고집적의 어려움이 있다. 이러한 문제를 해결하기 위해 상변화 물질의 개선과 소자 구조의 개선 등의 새로운 접근이 시도되고 있다. 본 연구에서는 $Ge_2Sb_2Te_5$ 박막의 전기적 특성을 개선하기 위해서 이종 원소인 질소를 첨가한 N-doped $Ge_2Sb_2Te_5$ 박막에 대한 특성을 살펴 보았다. $SiO_2$/Si 기판 위에 100 nm 두께의 박막을 D.C. magnetron sputter 방법으로 증착하여, 질소 분위기 $100^{\circ}C{\sim}300^{\circ}C$온도 구간에서 열처리하였다. 열처리에 따른 박막 특성을 관찰하기 위해 면저항 측정, XRD, TEM 분석을 통해 박막 특성을 관찰하였다. 면저항 측정과 XRD peak 분석을 통해 $Ge_2Sb_2Te_5$ 시스템에 비하여 N-doped $Ge_2Sb_2Te_5$ 시스템의 결정화 온도가 상승하였음을 확인하였다. 면저항은 첨가된 질소의 조성이 증가할수록 증가하였고, FCC 상에서 HCP 상으로의 상변화 온도 역시 증가하였다. 첨가된 질소가 $Ge_2Sb_2Te_5$, 박막의 결정 성장을 억제하였고, 상대적으로 높은 저항을 가지고 안정한 FCC상을 고온 열처리 이후에도 유지하였다. 질소 첨가를 이용한 상변화 물질의 열안정성 향상과 저소비전력 구동을 통해 향후 고집적 상변화 메모리에의 적용이 가능하다.

We investigated the characteristics of the Hafnium silicate (Hf-silicate) film which is grown by ALD (atomic layer deposition). The Hf-silicate films that were annealed by the RTP. The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas and $NH_3$ gas annealing, were investigated by XPS, TEM and I-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The tendency of nitnitridation in NO gas and $NH_3$ is different. Leakage current is improved in post NO gas annealing.

The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas annealing, were investigated by XPS, NEXAFS, TEM and C-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The suppression of phase separation was observed in Hf-silicate films with high nitrogen contents. The negative shift of threshold voltage is caused by the incorporation of nitrogen in the hafnium silicate films.

High performance three-dimensional (3-D) stacked poly-Si complementary metal-oxide semiconductor (CMOS) inverters with a high quality laser crystallized channel were fabricated. Low temperature crystallization methods of a-Si film using the excimer-laser annealing (ELA) and sequential lateral solidification (SLS) were performed. The NMOS thin-film-transistor (TFT) at lower layer of CMOS was fabricated on oxidized bulk Si substrate, and the PMOS TFT at upper layer of CMOS was fabricated on interlayer dielectric film. The 3-D stacked poly-Si CMOS inverter showed excellent electrical characteristics and was enough for the vertical integrated CMOS applications.

Nano-floating gate memory (NFGM) devices were fabricated by using the low temperature poly-Si thin films crystallized by ELA and the $In_2O_3$ nano-particles embedded in polyimide layers as charge storage. Memory effect due to the charging effects of $In_2O_3$ nano-particles in polyimide layer was observed from the TFT NFGM. The post-annealing in 3% diluted hydrogen $(H_2/N_2)$ ambient improved the retention characteristics of $In_2O_3$ nano-particles embedded poly-Si TFT NFGM by reducing the interfacial states as well as grain boundary trapping states.

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.9501 eV - $(8.79{\times}10^{-4}\;eV/K)T^2$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{1^-}$exciton peaks for n=1.

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$ prepared from horizontal electric furnace. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$, obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - $(7.721{\times}10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy$({\Delta}cr)$ and the spin-orbit splitting energy$({\Delta}so)$ for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11^-}$ exciton peaks.

Sn-filled and Fe-doped $CoSb_3$ skutterudites were synthesized by encapsulated induction melting. Single ${\delta}$-phase was successfully obtained by subsequent annealing and confirmed by X-ray diffraction analysis. Temperature dependences of Seebeck coefficient, electrical resistivity and thermal conductivity were examined from 300 K to 700 K. The positive Seebeck coefficient confirmed the p-type conduction. Electrical resistivity increased with increasing temperature, which shows that the $Sn_zCo_3FeSb_{12}$ skutterudite is highly degenerate. Thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. Thermoelectric figure of merit was enhanced by Sn filling and its optimum filling content was considered to be z=0.3 in the $Sn_zCo_3FeSb_{12}$ system.

We fabricated seeded $SrBi_2Ta_2O_9$(SBT) thin films using seeding technique on the $LaZrO_x$ (LZO)/Si structure. To evaluate the ferroelectric properties of seeded SBT thin films, we investigated the crystalline phase, the surface morphology, the capacitance-voltage (C-V) curve and the current density-voltage (J-V) curve of seeded films and then compared with the physical and electrical properties of unseeded films. As the result of that, the characteristics of seeded and unseeded films have a slight difference. Therefore, the ferroelectric properties of seeded SBT thin films are not necessarily superior than unseeded films.

In this study, polyvinylidene fluoride/trifluoroethylene (PVDF-TrFE) was investigated. For a metal-ferroelectic-metal (MFM) structure, We obtained that the 70 nm-thick film showed the maximum polarization of $8.24\;{\mu}C/cm^2$, 2Pr of $6\;{\mu}C/cm^2$ and the coercive voltage of ${\pm}3.1\;V$ at 12 V. The 140 nm-thick film showed higher performance. However, the thicker film required a higher voltage. The current density was $10^{-6}{\sim}10^{-7}\;A/cm^2$ under 15 V. We can expect from these results that the electrical properties of the devices particularly ferroelectric thin film transistor using PVDF-TrFE copolymer, be able to be on the trade-off relationship between the remanent polarization and the leakage current.

반도체 소자의 제조 공정 기술이 발전하고 초고집적화가 됨에 따라 소자 선폭도 급속하게 감소하였다. 이로 인하여 기존의 식각 공정에서 식각 후 남은 잔여 Photoresist residue는 소자 생산에 큰 영향이 없었으나 현재 이러한 잔여물은 초고집적 소자에 치명적인 문제를 발생시킬 수 있다. 본 실험에서는 세정액 분자에 플라즈마 충격을 가하여 세정액을 활성화함으로써 기존의 세정액과의 세정능력을 비교 분석하였다.

Growth of cubic SiC has been carried out on oxided Si substrate using atmospheric pressure chemical vapor deposition (APCVD). Hexamethyldisilane (HMDS) was used as the single precursor and nonflammable mixture of Ar and $H_2$ was used as carrier gas. Epitaxial growth had performed depositions under the various $H_2$ conditions which were adjusted from 0 to 100 seem. The effects of $H_2$ was characterized by surface roughness, thickness uniformity, films quality and elastic modulus. Thickness uniformity and films quality were performed by SEM. Surface roughness and elastic modulus were investigated by AFM and Nano-indentor, respectively. According to the $H_2$ flow rate, Poly 3C-SiC thin film quality was improved not only physical but also mechanical properties.

In this study, a single ZnO nanowire - CdTe nanoparticle nano floating gate memory (NFGM) device is successfully fabricated and characterized their memory effects by comparison of electrical characteristics of ZnO nanowire-based field effect transistor (FET) devices with CdTe nanoparticles embedded in the $Al_2O_3$ gate materials and without the CdTe nanoparticles.

In this paper, we have studied the optical properties of $TiO_2$ thin film by adding the additives of PEG, PEO and both of them. As a variable amount of additives was added into $TiO_2$, the transmittance of $TiO_2$ thin film was decreased. When the 20 wt% of additives mixed with PEG and PEO was added into $TiO_2$, the transmittance of $TiO_2$ thin film showed higher than that of 10 wt% of additives mixed with PEG and PEO. As a results, we could conclude that the additives makes pore in $TiO_2$ thin film and it improves the transmittance of $TiO_2$ thin film.

반도체 소자의 공정에 있어서 device scaling으로 인한 고유전 게이트 산화막 (high-k dielectics thin film)의 공정 개발 확보 방안이 필요하다. 본 논문에서는 유도결합 플라즈마를 이용하여 고유전율 박막을 식각하였다. CF4, SF6 등의 가스에서 금속-F, 금속-S 결합의 낮은 휘발성으로 인하여 시료 표면에 잔류하여 낮은 식각률을 보이며 측벽 잔류물을 형성하였으며, HBr, Cl 기반 플라즈마에서 금속-Br, 금속-Cl 결합은 시료 표면으로부터 탈착이 용이하여 효과적인 식각이 이루어짐을 확인할 수 있었다.

Micro thermoelectric generator has been attractive for the alternative power source to operate the wireless sensor node. In this paper, we designed the column-type micro thermoelectric device and their device characteristics were measured. n-type Bi2Te3 and p-type BiSbTe3 thermoelectric thin films were grown on (001) GaAs substrates by metal organic chemical vapour deposition (MOCVD) and they were pattemed. The height of thermoelectric film were controlled by the deposition time, temperature and MO-x gas pressure. Seebeck coefficient was measured at room temperature and hole concentration and electrical resistivity of thermoelectric film were also characterized.

Bi-Te계 화합물은 상온영역($250^{\circ}C$이하)에서 열전특성이 우수하여, 냉각용 및 발전용 열전소자 재료로 사용되고 있다. 앞선 연구에서 MA법에 의한 La이 치환된 Bi-Te 진공가압 소결체의 열전특성이 $Bi_2Te_3$와 비교하여 향상된 값을 나타내었다. 본 연구에서는 Bi와 Te을 각각 0.01wt%, 0.02wt% La으로 미량 치환하여 melting법으로 제조한 분말을 $420^{\circ}C$, 200MPa로 가압 소결하였다. 가압 소결체의 열전특성은 Seebeck계수, 전기전도도. 열전도도를 측정하여 성능지수를 계산하였고 Bi-Te, (Bi-La)-Te, Bi-(Te-La)의 열전특성을 비교 분석하였다.

Effects of power ratio on the electrical and optical properties of Au based Ga-, B- codoped ZnO(GZOB) thin films were investigated. GZOB thin films on Au based PC flexible substrate were deposited at various power in the range from 50 to 125 W by DC magnetron sputtering. Au layer was fabricated to achieve good electrical conductivity. The presence of additional boron impurity leads to improve structural defects. Thus, the c-axis orientation along (002) plane was enhanced with the increasing of power ratio and the surface morphology of the films showed a homogeneous and nano-sized microstructure. GZOB films grown at 125W were investigated a low resistivity value of $1{\times}10^{-3}{\Omega}cm$ and a visible transmission of 80% with a thickness of 300nm.

Dye-Sensitized Solar Cell Solar cells(DSSC) were appeared for overcoming global environmental problems and lack of fossil fuel problems. And it is one of study field that is getting into the spotlight lately because manufacturing method is more simple and inexpensive than existing silicon solar cells. Oxide semiconductor is used for adsorption of dye and electron transfer in DSSC study, and $TiO_2$ is used most usually. Overall light conversion efficiency is changed by several elements such as $TiO_2$ particle size and structure, pore size and shape. In this study, we report the solar cell performance of titania$(TiO_2)$ film electrodes with various particle sizes. $TiO_2$ particle size was 16 nm, 25 nm, and mixture of 16nm and 25 nm, and manufactured using Doctor blade method. When applied each $TiO_2$ film to DSSC, the best efficiency was found at 16nm of $TiO_2$ particle. 16nm of $TiO_2$ particle has the highest efficiency compared to the others, because particles with smaller diameters would adsorb more dye due to larger surface area. And in case of the mixture of 16nm and 25 nm, the surface area was smaller than expected. It is estimated that double layer is adsorbed a large amount of chemisorbed dye and improved light scattering leading due to efficiency concentration light than mono layer.

Dye-sensitized solar cell using conversion of solar energy to electrical energy appeared that which solves a environmental matter. The dye-sensitized solar cell uses nano-crystalline oxide semiconductor for absorbing dye. The $TiO_2$ is used most plentifully. The efficiency of the dye-sensitized solar cell changes consequently in the particle size, morphology, crystallization and surface state of the $TiO_2$. In this paper, we report The effect of titania$(TiO_2)$ thickness on the performance of dye-sensitized solar cells. Using doctor blade method, It produced the thickness of the $TiO_2$ with $7\;{\mu}m,\;10\;{\mu}m,\;13\;{\mu}m$. The efficiency was the best from $10{\mu}m$. It had relatively low efficiency on the thickness from $7\;{\mu}m\;to\;13\;{\mu}m$. The reason why it presents low efficiency on $7\;{\mu}m$ thickness is that excited electrons can not be delivered enough due to thin thickness of $7\;{\mu}m\;TiO_2$. And The reason why it presents low efficiency on $13\;{\mu}m$ thickness is that thick $13\;{\mu}m\;TiO_2$ can not penetrate the sunlight enough.

ONO(Oxide-Nitride-Oxide)구조는 기억소자의 전하보유 능력을 향상시키기 위해 도입된 게이트 절연막이다. 본 연구에서는 ELA(Excimer Laser Annealing)방법으로 비정질 실리콘을 결정화 시켜서 그 위에 NVM(Nonvolatile Memory)소자를 만들어 전기적 특성을 측정하여 결과를 나타내었다. 실험 결과 같은 크기의 $V_D$에서 $V_G$를 조절함으로써 $I_D$의 크기를 조절할 수 있었다. $V_G-I_D$ Graph에서는 $I_{on}$과 $I_{off}$, 그리고 Threshold Voltage를 알 수 있었다. $I_{on}/I_{off}$ Ratio는 $10^3-10^4$이다. $V_G-I_D$ Graph에서는 게이트에 인가하는 Bias의 양을 통해서 Threshold Voltage의 크기를 조절할 수 있었다. 이는 Trap되는 Charge의 양을 임의로 조절할 수 있다는 것을 의미하며, 이러한 Programming과 Erasing의 특성을 이용하여 기억소자로서의 역할을 수행하게 된다.

탄소나노튜브(CNTs)는 우수한 물리적, 화학적, 기계적 특성으로 다양한 분야에서 연구가 진행 되고있다. 특히, field emission displays (FEDs)로의 응용을 위해서는 기본적으로 sodalime glass 위에 직접 CNTs를 성장시켜야 하며, 소자 응용을 위해 기판인 sodalime glass를 왜곡시키는 온도보다 낮은 온도에서 CNT의 수직 성장이 이루어져야 한다. 본 연구에서는 Hot-filament plasma enhanced chemical vapor deposition (HF-PECVD)를 이용하여 합성온도를 400, 450, 500, $550^{\circ}C$로 변화시켰으며 촉매 층인 Ni의 두께를 5~40 nm까지 조절하여 탄소나노튜브를 합성하였다. 저온에서 합성된 탄소나노튜브는 FE-SEM을 이용하여 성장 형태 및 표면 특성을 확인하였으며, 미세구조는 HR-TEM을 이용하여 확인하였다.

결정질 실리콘 웨이퍼의 두께와 비저항은 태양전지의 효율을 결정하는 매우 중요한 요인이다. 높은 효율을 갖는 태양전지 설계를 위해 태양전지 시뮬레이터인 PC1D 프로그램을 이용하여 태양전지 웨이퍼 두께, 웨이퍼 비저항, 에미터 도핑 농도를 조절하였다. 최적화 결과, 베이스층 두께 $100{\mu}m$, 비저항 $0.1{\Omega}{\cdot}cm$, 에미터층 도핑 농도 $3{\cdot}10^{18}cm^{-3}$에서 $J_{sc}=39(mA/cm^2),\;V_{oc}=734(mV),\;P_{max}=3.17(W)$, FF=74, Efficiency=21.3%의 고효율을 얻을 수 있다. 본 연구를 통하여 태양전지 설계나 제조 시에 연구비를 절감할 수 있고 높은 효율의 태양전지로 접근할 수 있다.

Fabrication of dot-patterned carbon nanotube (CNT) emitters with excellent field emission properties using photo-sensitive CNT paste is described. The photosensitive CNT paste showed good photo-patternability, which led us to easily form $10-{\mu}m$-diameter dot arrays. We presented a parametric study on formulating the photo-sensitive paste and their resultant field emission characteristics.

Effects of post-metallization anneal (PMA) on interface trap characteristics of Si-$SiO_2$ are studied. The conventional PMA method utilizes forming gas anneal, where 10% hydrogen in nitrogen atmosphere is used. A new PMA method utilizes hydrogen rich PECVD- silicon nitride $(SiN_x)$ film as a hydrogen diffusion source and a out-diffusion blocking layer. It can be shown through charge pumping current measurement that the new PMA is indeed effective to decrease Si-$SiO_2$ interface trap density.

In order to reduce a signal delay in ULSI, low resistive metal and intermetal dielectric material of low dielectric constant are required. Ordered mesoporous silica film is proper to intermetal dielectric due to its low dielectric constant and superior mechanical properties. In this study, ordered mesoporous silica films was synthesized using TEOS (tetraethoxysilane) / MTES (methyltriethoxysilane) mixed silica precursor and Brij-$76^{(R)}$ surfactant. These films had the porosity of 40% and dielectric constant of 2.5. To lower dielectric constant, the ordered mesoporous silica films were surface-modified by HMDS (hexamethyldisilazane) treatment. HMDS substituted -OH groups on the surface of silica wall for -Si$(CH_3)_3$ groups. After the HMDS treatment, ordered mesoporous silica films were calcined at various calcination temperatures. Through the investigation, it was concluded that the proper calcination temperature is necessary as aspects of structural, electrical, and mechanical properties.

금속 게이트 전극으로 활용하기 위해서 TiN 박막을 D.C. Magnetron reactive sputtering 방식으로 질소가스와 아르곤 가스 혼합가스를 이용하여 증착하여 MOSCAP을 제작하였다. 박막내의 질소의 조성은 혼합가스내의 질소가스의 분압을 변화시킴으로써 조절하였고, XPS를 이용하여 조성을 분석하였다. 또한 질소농도에 따른 전기적 특성의 분석은 I-V, C-V 측정을 통해 시험하였고 XRD를 이용하여 결정상 분석을 시행하였다. 박막내의 질소농도와 전기적 비저항은 질소분압이 높아짐에 따라 증가하였고, 박막의 workfunction 또한 질소농도의 변화에 따라 변화함을 알 수 있었다.

금속 게이트 전극으로 활용하기 위해서 두 가지의 금속박막으로 구성된 이중 금속층을 D.C. Magnetron sputtering 방식으로 증착하여 MOSCAP을 제작하였다. 박막의 적층 구조 및 열처리에 따른 계면반응을 AES, XPS를 통해 분석하였고, XRD 측정을 통해 결정상을 분석하였다. 또한 박막의 두께 및 열처리에 따른 전기적 특성과 workfunction 변화를 관찰하기 위해 I-V, C-V 분석을 진행하였다. 열처리 전후의 이중 금속층의 workfunction은 두 금속층의 확산의 정도에 따라서 열처리 전에는 하위금속층의 workfunction에서 열처리 후에는 상위금속층의 workfunction 값과의 중간값으로 변화하였다. 또한 열처리에 따라 두 금속층 중간에 새로운 금속간 화합물이 형성될 경우 이중 금속층의 workfunction은 새로운 금속간 화합물의 workfuction 값을 나타내었다.

In this paper, we fabrication of 2-D photonic crytal using holographic lithography. We used Ag doped chalcogenide AsGeSeS film and He-Ne (632.8nm) (P:P) Polarized laser beam. The thickness of Ag thin film was varied from 60nm and the thickness of chalcogenide thin film was varied from 2um. Frist, holographic lithography with 1-D photonic crystal on Ag/AsGeSeS film. And than revolved the sample $90^{\circ}$ to fabricate 2-D photonic crystal with holographic lithography.

Photodiffusion of silver into chalcogenide thin film is one of the most interesting effects that occurs in chalcogenide glass as it theatrically changes the properties of the initial material and forms a ternary. Programmable Metallization Cell(PMC) Randon Access Memory use for photodiffusion of mobile metal is based on the electrochemical growth and removal of nanoscale metallic pathway in thin film of solid electrolyte. This paper investigates the annling properties on Ag-doped $Ge_{25}Se_{75}$ thin film structure and describes the electrical characteristics of PMC-RAM. The composition of the intercalation products containing Ag is confirmed using X-ray diffraction which shows the formation of Ag-doped $Ge_{25}Se_{75}$.

투명전도박막은 ITO, $SnO_2$, ZnO, 등이 있으나 $SnO_2$는 자외선 영역까지 투과시키는 우수한 광학적 특성을 나타내지만, 상당히 큰 전기저항으로 인해 현재는 현재 ITO가 널리 이용되고 있다. ITO(Indium Tin Oxide)박막은 자외선 영역에서 반사율이 높으며 가시광선영역에서는 80%이상의 뛰어난 투과율을 가지고 있다. 또한 낮은 전기저항과 넓은 광학적 밴드갭 때문에 가장 유용한 투과전도성 재료 중에 하나이다. 이러한 특성 때문에 여러 가지 문자 표시소자의 투명전극, 태양전지의 창재료, 정전차폐를 위한 반도체 포장재료, 열반사막, 면발열체, 광전변환 소자에 응용되고 있다. 일반적으로 박막의 제작에는 저항가열법과 전자선가열법, 스퍼터링법의 물리적 증착과 화학적 증착으로 나뉜다. 본 논문에서는 증착온도를 달리 하여 RF-sputtering에 의해 ITO박막을 증착한 후 온도증가에 따른 박막의 특성을 연구하였으며 또한 광역평탄화를 위한 CMP공정을 적용하여 증착온도가 연마에 미치는 영향을 연구하였다. 본 실험에서 사용된 ITO박막은 $2{\times}2Cm$의 Corning glass위에 증착되었으며 타겟은 $In_2O_3$와 $SnO_2$가 9:1로 혼합된 Purity 99.99%이상의 직경 2 inch인 ITO타겟을 사용하였다. 박막 증착시 기판온도는 상온에M $200^{\circ}C$까지 변화시켰으며 RF power는 100W로 일정하게 하였으며 증착압력은 $8{\times}10^{-2}$Torr이였다. CMP공정조건은 헤드속도 60rpm, 플레이튼 속도 60rpm, 슬러리 주입 유량 60mml/min, 압력 $300g/cm^2$이였다. 전기적 특성은 four point probe를 이용하여 측정하였으며 광학적 특성은 UV-Visible Spectrometer를 이용하여 200~900nm의 파장범위에서 광투과도를 측정하였다.

ZnO는 육방정계(wurtzite) 결정구조를 지니며 상온에서 3.37eV의 wide band gap을 갖는다. ZnO의 엑시톤 결합 에너지는 GaN에 비해 2.5배 높은 60meV로서 고효율의 광소자 적용 가능성이 높다. 또한 고품위의 박막합성이 가능하다. 이러한 특성 때문에 display소자의 투명전극, 광전소자, 바리스터, 압전소자, 가스센서 등에 폭 넓게 응용되고 있다. ZnO박막의 제조는 스퍼터링, CVD, 진공증착법, 열분해법 등이 있다. 본 논문에서는 RF 마그네트론 스퍼터에 의해 제작된 ZnO 박막에 CMP공정을 수행하여 연마율과 비균일도 특성 및 광투과 특성을 연구하였다. ZnO박막은 $2{\times}2Cm$의 Corning glass위에 증착되었다. 로터리 펌프와 유확산 펌프를 이용하여 초기진공을 $2{\times}10^{-6}$ Torr까지 도달시킨 후 Ar과 $O_2$를 주입하였다. 증착은 상온에서 이루어졌으며 공정압력은 $6{\times}10^{-2}$Torr이였다. 초기의 불안정한 상태의 풀라즈마를 안정시키기 위해 셔터를 이용하여 pre-sputtering을 하였다. CMP 공정조건은 플레이튼 속도, 슬러리 유속, 압력은 칵각 60rpm, 90ml/min, $300g/cm^2$으로 일정하게 유지하였으며 헤드속도는 20rpm에서 100rpm까지 증가시키면서 연마특성을 조사하였다. 실리카슬러리의 적합성을 알아보기 위해 DIW와 병행하여 CMP공정을 수행하고 비교 분석하였다. CMP공정 결과 광투과도는 굉탄화된 표면의 확보로 인해 향상된 특성을 보였다. 실리카 슬러리를 사용하여 CMP를 할 경우는 헤드속도는 저속으로 하여야 양호한 연마특성을 얻을 수 있었다.

$CdIn_2S_4$ (110) films were grown on semi-insulating GaAs (100) by a hot wall epitaxy method. Using photocurrent (PC) measurement, the PC spectra in the temperature range of 30 and 10 K appeared as three peaks in the short wavelength region. It was found that three peaks, A-, B-, and C-excitons, correspond to the intrinsic transition from the valence band states of ${\Gamma}_4(z),\;{\Gamma}_5(x),\;and\;{\Gamma}_5(y)$ to the exciton below the conduction band state of ${\Gamma}_1(s)$, respectively. The 0.122 eV crystal field splitting and the 0.017 eV spin orbit splitting were obtained. Thus, the temperature dependence of the optical band gap obtained from the PC measurement was well described by $E_g$(T)=2.7116eV - $(7.65{\times}10^{-4}\;eV/K)T^2$/(425+T). But, the behavior of the PC was different from that generally observed in other semiconductors. The PC intensities decreased with decreasing temperature. This phenomenon had ever been reported at a PC experiment on the bulk crystals grown by the Bridgman method. From the relation of log $J_{ph}$ vs 1/T, where $J_{ph}$ is the PC density, two dominant levels were observed, one at high temperatures and the other at low temperatures. Consequently, the trapping centers due to native defects in the $CdIn_2S_4$ film were suggested to be the causes of the decrease in the PC signal with decreasing temperature.

In this paper we report upon an investigation into the effect of sputter pressure and RF power on the electrical properties of Gallium doped zinc oxide (GZO) film. GZO films were deposited on glass substrate without substrate temperature by RF magnetron sputtering from a ZnO target mixed with 5 wt% $Ga_2O_3$. Argon gas pressure and RF power were in the range of 1~11 mTorr, and 50~100 W, respectively. However, the resistivity of the film was strongly influenced by the sputter pressure and RF power. We were able to achieve as low as $1.5{\times}10^{-3}\;{\Omega}cm$, without substrate temperature.

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

반도체 소자가 발달함에 따라서 박막은 더욱 다층화 되고 그 두께는 줄어들고 있다. 따라서 소자의 초고집적화를 위해서는 각 박막의 두께를 더욱 작게 하여야 한다. 또한 반도체 소자 제조 공정에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 금속 배선과 Si기판 사이에는 필연적으로 확산방지막을 삽입하게 되었다. 기존의 연구에서는 $1000\;{\AA}$의 W-B-C-N 확산방지막을 제작하여 연구하였다. 이 논문에서는 Cu의 확산을 방지하기 위한 W-B-C-N 확산방지막을 다양한 두께로 제작하여 그 특성을 확인하여 초고집적화를 위한 더욱 얇은 두께의 W-B-C-N 확산방지막에 대하여 연구하였다. W-B-C-N 확산방지막의 두께 변화에 대한 특성을 확인하기 위하여 $900^{\circ}C$까지 열처리 한 후 그 면저항을 측정하였다.

This paper describes on the characteristics of Pd thin films deposited on poly-crystalline 3C-SiC buffer layers for microsensors, in which the poly 3C-SiC was grown on Si, $SiO_2$, and AlN substrates, respectively, by APCVD using HMDS, $H_2$, and Ar gas at $1100^{\circ}C$ for 30 min. In this work, a Pd thin film was deposited on the poly 3C-SiC film by RF magnetron sputter. The thickness, uniformity, and quality of these samples were evaluated by SEM. Crystallinity and orientation of the Pd film were analyzed by XRD. Finally, Pd/poly 3C-SiC schottky diodes were fabricated and characterized by current-voltage measurements. From these results, Pd/poly 3C-SiC devices are promising for high temperature hydrogen sensors and other microsensors.

본 연구에서는 MIM (Metal-Insulator-Metal) capacitor의 유전 물질로 사용되는 $Ba_xTi_yO_z$(BTO) 박막의 식각 특성을 고찰하였다. $Cl_2$/Ar 혼합가스를 이용하여 Inductively Coupled Plasma(ICP)에서 BTO 박막을 식각하였고, 식각된 BTO박막의 표면을 X-ray photoelectron spectroscopy(XPS) 분석하였다. BTO박막의 식각 속도는 Ar이 80%인 식각 조건에서 31.7nm/min의 식각 속도를 추출하였고, 동시에 Pt박막에 대한 높은 선택비를 얻었다. X-ray photoelectron spectroscopy (XPS) 분석 결과로부터 표면 반응을 조사하여, 식각 기구를 고찰하였다.

반도체의 최소 회로 선폭이 감소함에 따라 Contact 저항이 크게 증가하게 된다. Contact 저항을 낮추기 위하여 Tungsten Metal Contact을 일반적으로 사용하며, Si 기판과의 Ohmic 접촉 및 WF6의 Fluorine과 Si 반응을 억제하기 위한 Barrier Metal로 Ti/TiN 이중막을 사용한다. 본 논문에서는 90nm급 이하 제품의 CVD Ti/TiN Barrier Metal이 유발하는 불량 현상과 원인 규명에 대하여 연구하였으며, Ohmic Contact형성을 위해 TiSix형성 최적화 방안에 대해 정리하였다.

PTCR 세라믹스를 적층형 부품으로 제조할 경우 소형화, 저 저항화 및 과전류 유입 시 빠른 응답특성을 갖는다는 장점을 가지고 있으며, 이러한 적층형 부품제조시에는 내부전극재가 부품소자의 물성에 중요한 영향을 미친다. 특히 우수한 옴성 접촉(Ohmic Contact)을 갖는 Zn, Fe, Sn, Ni 등의 적층 PTC용 전극재는 높은 산화특성으로 인해 재산화 과정에서의 비옴성 접촉(Non-ohmic contact)을 갖게 되어 PTC 특성을 저하시킬 우려가 있다. 따라서 본 연구에서는 적층형 PTCR 세라믹스의 내부전극재와 반도체 세라믹층의 동시소성거동 및 적층 PTCR 세라믹스의 전기적 특성을 평가하였다. 본 연구에 적용된 내부전극재로는 Ni 전극을 사용하였고, Ni 전극용 paste로는 무공제 paste, 반도체 세라믹공제 paste, $BaTiO_3$ 공제 paste의 3종 전극재가 이용되었다. 적층형 PTCR 세라믹스의 제조공정은 테이프 캐스팅(Tape casting), 내부전극인쇄, 적층 및 동시소성을 포함하는 적층화공정을 적용하였다. 각각의 전극 paste를 적용하여 제조된 chip은 미세구조관찰, I-V특성, R-T특성 등을 평가하여 내부전극내 세라믹공제의 영향을 고찰하였다.

In large area scanning with a micro-electron column, the optimal operation condition for the best visibility was studied. A micro-electron column can realize nearly unlimited scanning size with distribution of micro-electron columns, therefore applicable to large sized SEM or VSEM. The maximum scanning size with a micro-electron column was about $200cm^2$ when only one deflector was employed. However, a double deflector equipped micro-electron column provided 1.7 times larger scanning area with the same visibility as that of one deflector.

We investigated the growth behaviors of ZnO epilayers on sapphire substrates fabricated sing RF magnetron puttering and RTA. The effects of deposition temperature and oxygen partial pressure in plasma on the structural and electrical properties were measured by XRD, AFM, SEM, and Hall effect measurement. It was found that ZnO thin films became denser and smoother with increasing deposition temperature and $O_2$ content in the puttering gas. ZnO thin film of oxygen and argon with a ratio of 5:5 had an electron concentration of $8.048{\times}10^{18}cm^{-3}$, resistivity of $0.0141{\Omega}{\cdot}Cm$, and mobility of $55.07cm^2/V{\cdot}s$.

In this work, a temperature stable PWM(Pulse width modulation) circuit is proposed. The designed PWM circuit has a temperature dependent current source and a temperature independent voltage to compensate electrical characteristics with operating temperature. The variation of driving current is from about 4% to -6% in the temperature range $0^{\circ}C\;to\;70^{\circ}C$ compared to the current at the room temperature. The variation of bandgap voltage reference is from about 1.3% to -0.2% with temperature when the supply voltage is 3.3 volts. From simulation results, the variation of output pulse width is less than from 0.86% to -0.38% in the temperature range $0^{\circ}C\;to\;70^{\circ}C$.

The etching characteristics of $Al_2O_3$ films using the inductively coupled plasma (ICP) was investigated. The etch gas was the mixture of $BCl_3$ and He. The effect of ICP source and bias powers on etch rate and etch selectivity to polycrystalline Si was investigated in the etch process of $Al_2O_3$. The etch rate of $Al_2O_3$ film was 23nm/min when the source power and bias power were 600W and 60W, respectively. The results also indicated that the etch selectivity to polycrystalline Si could not be enhanced to be higher than 1.0 by changing the ICP source power and bias power, under the experimental conditions used in the present work. Based on plasma parameters extracted from Langmuir probe data, the etching mechanism of $Al_2O_3$ film was discussed in detail.

To improved the conjugation between $SiO_2$ and P3HT active layer, P3HT/POSS conjugated polymers were synthesised and used as the active layers of organic TFT's. We achieved the field-effect mobilities in the saturation region ${\sim}1.19{\times}10^{-3}\;[cm^2/v{\cdot}sec]$ and on/off ratio ${\sim}2.51{\times}10^2$. These values are higher than ones of the P3HT-based OTFTs. The results also demonstrated the off-current decrease.

By employing a photo-sensitive PVA as a photoresist, we first demonstrated simultaneous patterning and passivation of P3HT active layer. The passivation layers were obtained by annealing the organic layers after developing PVA and over-etching the P3HT layer. The fabricated OTFTs were electrically characterized. The OTFTs after the passivation exhibited the field-effect of ${\sim}5.9{\times}10^{-4}cm^2/V{\cdot}s$, on/off current ratio of ${\sim}10^3$. The value of OTFTs a little degradation with time in air but it appeared different unpassivated OTFT.

Epoxy resign is used to insulate electricity in the gas insulated switchgear. There were many research to find out characteristics of the epoxy resign. But there is a poor research for the mechanical investigations. In this paper, we made an experiment and evaluated mechanical properties with specimens of the epoxy resign. Using Spacer which is a part of high voltage switchgear, and we studied the structural analysis methods and made an overture a how to analysis in order to solve problems.

기존 imprint공법으로 기계식 프레스를 많이 사용되고 있으며, 기계식 프레스를 이용하여 imprint시 균일하게 압력인가가 되지 않는 것을 알게 되었다 예를 들어 한쪽으로 많이 눌리고 다른쪽은 적게 눌려서 균일하게 패턴 전사가 되지 않아 imprint실험이 힘들었었다. 그리하여 Autoclave라는 공압장비를 알게 되었고 공기의 압력을 이용하여 imprint시 균일하게 압력인가가 전해지는 것을 알 수 있었다. Autoclave장비를 이용하여서 imprint가능성 확인과 기계식 장비와 공압식 장비의 차이점을 비교하여 설명을 하고자 함.

In this paper, we investigated impurity content of carbon nanotube reinforced semiconductive shield materials and conventional semiconductive shield materials in power cables. To reduce impurity content, we used solution compounding method that an adding process of extra additives neglected. Impurity content measured through ICP-AES(Inductively Coupled Plasma Atomic Emission Spectroscopy). Also, impurity measured Ca, Cu, Fe, Al, Mg, Na, K, Si in eight. As a result, carbon nanotube reinforced semiconductive shield materials is lower than conventional semiconductive shield materials in impurity content by ICP-AES.

We studied the partial discharge detecting by sensing electromagnetic pulse emitted from the partial discharge source in the stator winding of HV Rotating Machine with UWB sensor. In this study, we designed new type of compact low frequency UWB sensor based on micro-strip technology and made experiments of offline dismantled testing compare with the traditional HFCT as a reference sensor in the laboratory. We investigated internal discharge, surface discharge, corona discharge and non-defected state normal stator on pre-made stator winding by using UWB patch sensor.

본 논문에서는 $SiO_2$ Gate 유전체를 대체할 재료의 하나인 $TiO_2$, Gate 유전체의 기판 증착 온도에 따른 특성을 알아보고자 한다. 디바이스의 고집적화가 높아짐에 따라 얇은 두께의 Gate 유전체의 절대적인 필요에 따라 두께를 최소화하면서 유전율은 높아 전기적 특성이 우수한 소재를 찾게 되었다. 본 논문의 실험에서는 비휘발성 메모리 소자 제작시 Gate Blocking Layer 적용을 위해 High-k 물질인 $TiO_2$, 박막 증착 실험을 하였고, APCVD 방법을 사용하여 성장하였다. 증착 온도에 따른 I-V 특성을 분석하고 그에 따른 소자의 물리적 구조를 SEM을 통해 확인하면서 소자 제작시 최적의 온도를 찾고자 하였다.

In this paper we investigated the partial discharge distribution using the K-means clustering according to the needle of tilt and void at the cross linked polyethylene(XLPE) insulators. As a result, the specimen with tilt $45^{\circ}$ has highest breakdown voltage and the specimen with air void has lower breakdown voltage than the specimen with on void. In K-menas clustering distribution of clusters concentrates at inception condition, but the distribution spreads widely at breakdown.

This paper investigated the influence on partial discharge distribution of various defects at the model power cable joints interface using K-means clustering. As the result of analyzing discharge number distribution of ${\Phi}-n$ cluster, clusters shifted to $0^{\circ}\;and\;180^{\circ}$ with increasing applying voltage. It was confirmed that discharge quantity and euclidean distance between centroids were increased with applying voltage from the analyzing centroid distribution of ${\Phi}-q$ cluster. The degree of dispersion was increased with calculating standard deviation of ${\Phi}-q$ cluster centroid. The tendency both number of discharge and mean value of ${\Phi}-q$ cluster centroid were some different with defect types.

The SiOC film of carbon centered system was prepared using bistrimethylsilylmethane and oxygen mixed precursor by the chemical vapor deposition. The chemical properties of the SiOC film were analyzed by the I-V measurement and FTIR spectra. The main bond of 950~1200 cm-1 was composed of the Si-C, Si-O-C and Si-O bonds. The leakage current of the SiOC film increased with the increasing of the carbon content, and the drift of the current was similar to the Si-O-C bond content.

The nano-technology becomes a key technology in every field and it wasn't specialized any more. But nano-technology didn't applied every fields actively. Because It is difficult to fabricate the nanocomposites using nano-partie without aggregation of nano-size particles. So many researcher used organic solvent for dispersion in polymer nanocomposites. But organic solvent affected the electrical, mechanical, and thermal properties in the sample. We aimed this point that investigated the effect of organic solvent in the sample by evaporated temperature(60, 80, $100^{\circ}C$). In results, nano-particles affected to electrical properties of the sample due to decrease the energy gap. And at 120 Hz, impedance value of samples by varied evaporated temperature was decreased only at $60^{\circ}C$ dramatically. It's means that organic solvent role to impurities and decreased the activation energy. And these impurities contributed to the conductivity in the sample.

Epoxy resin insulators show a lot of advantages for electrical power apparatus. Because epoxy resin provide electrical and mechanical characteristic which is excellent, it is desirable to apply epoxy resin as a spacer and post insulation in Gas Insulated Switchgear (GIS). In this study, we have investigated the influence of surface electric field attached particle contaminated spacer surfaces under SF6 gas. Also, we performed analysis of electric field. As a result, when the particle was attached on spacer, we found out a surface electric field of characteristics.

Ni stamper위에 100nm의 Si 코팅후 자기조립 단분자막(SAM)을 액상 코팅방식으로 형성 하였고, 내구성 및 열적 안정성을 검증하기 위해 반복적인 이형 및 압력인가 test가 실시하였다. 20회 이상의 이형실험을 통해 열적, 기계적 안정성을 확인하고, 접촉각 측정을 통해 이형특성의 안정성도 고찰하였다. 이를 Imprint공법을 적용 fine pattern의 구조물을 얻을 수 있었다. SAM코팅은 TRICHLOROSILANE을 사용하였으며 Hexane과 1000:1의 비율로 섞어서 stirrer에서 mixing하는 방식을 사용했으며, UV-ozone처리를 통한 이형성 제거 효과도 관찰하였다.

The objective of this paper is to effectively detect partial discharges in underground power cables. In this field, we have been usually applied several sensors for such partial discharges. This study used a type of beyond compare antenna based on the influence of background noises. Also, we designed a new structure that is able to easily apply in the adhesion of planar loop types for underground power cables in measurement sensitiveness elevation. A high frequency simulation tool (CST-MWS) was applied to the antenna used in this study, and it was used to evaluate certain characteristics. We fabricated an antenna using the simulation data obtained from a specific test. After checking the sensitivity of this Planar Loop Sensor in the Lab, it was tested in an actual site. This paper analyzed the data as a part of time and frequency domain using an oscilloscope and spectrum analyzer, respectively.

$TiO_2$ 박막은 좋은 내구성 전기적 특성과 함께 가시광선 영역에서의 높은 투과율, 높은 굴절률을 나타내어 태양전지의 반사 방지막, TFT 절연막, 광학적 필터에 쓰이는 다층 광학적 코팅 재료 등에 쓰이며 높은 이용가치로 인해 이에 대한 많은 연구가 이루어지고 있다. 본 논문에서는 APCVD(Atmospheric Pressure Chemical Vapor Deposition)법을 이용하여 $200^{\circ}C$에서 $350^{\circ}C$까지 증착 온도를 변화시키며 $TiO_2$ 박막을 제조할 때 나타나는 광학적 특징 변화에 대한 연구를 수행하였다. 온도가 증가할수록 굴절률은 커지고 $TiO_2$, 박막안의 기공과 결함의 비율은 감소하였다. 광투과율은 UV범위 이후에서 급격한 증가를 보였으며 온도가 증가함에 따라 흡수단이 긴 파장쪽으로 이동하였다. 흡수단의 증가는 광학적 밴드갭과 연관되며 온도가 증가할수록 광학적 밴드갭은 낮아지는 것을 확인할 수 있었다.

Etch rates and surface chemistry of phenol formaldehyde-based photoresist after short time $O_2\;and\;N_2O$ radio frequency (RF) plasma treatment depending on exposure time were investigated. It was found that the etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time in both gases. X-ray photoelectron spectroscopy (XPS) analysis showed that the surface chemical structure become nearly constant after the treatment of 15 sec. Concentration of surface oxygen-containing groups after processing both in oxygen and in $N_2O$ plasmas is similar.

In this paper we investigated the volume resistivity and AC conduction current according to the temperature and voltage. As a result, the volume resistivity comes to be small according to the measurement temperature and voltage. AC conduction current of the heat treatment specimen is increased because of the decrease of insulation.

고체 전해질로서 $CsH_2PO_4$결정은 $230^{\circ}C$ 이상에서 전기전도도가 $10^{-2}\;{\Omega}^{-1}cm^{-1}$의 값에 도달하는 초양성자(Superprotonic) 상태로 상전이를 한다. 이러한 이유로 $CsH_2PO_4$ 결정은 $230^{\circ}C$ 부근에서 사용할 수 있는 연료전지로 개발되어왔다. 실용적인 면에서 단결정의 경우보다 다결정의 물성 및 응용 연구가 많았는데, 입자 크기에 따른 체계적인 연구는 잘 이루어지지 않았다. 본 발표에서는 $CsH_2PO_4$ 다결정을 합성하여 SEM 및 micro Raman spectra를 조사하였다. SEM의 결과 입자들의 평균 크기는 100 nm 이었으며, micro Raman spectra는 Bulk $CsH_2PO_4$의 spectra 와 큰 차이를 보이지 않았다. $PO_4$의 내부진동은 거의 같은 주파수대를 보여주나, $300\;cm^{-1}$이하의 저주파 수 영역에서는 광학적 포논의 픽이 잘 보이지 않았다. 그 원인이 micro Raman 장치의 측정 특성인지, 물리적 변화인지는 확실치 않다.

실란 커플링제 종류에 따른 $SrTiO_3$/유기물 복합재료의 유전특성에 미치는 영향을 조사하여 비교하였다. 실란 커플링제는 amino계, epoxy계, methacryloxy계, acryloxy계, vinyl계를 사용하였으며, tape casting 방법으로 제작한 복합체 필름을 vacuum lamination 공정을 통하여 기판을 만들어 유전특성을 측정하였다. 실란 괴플링제의 종류에 따라 유전특성은 상이한 결과를 나타냈으며, acryloxy계를 제외한 다른 커플링제를 처리한 복합재료는 유전상수와 유전손실이 감소하는 경향을 확인할 수 있었다. Acryloxy계 커플링제를 처리한 복합재료는 커플링제가 처리되지 않은 복합재료와 비교하여 유전상수가 6%정도 증가하였며, 유전손실은 25%정도 감소하였다.

The test method on materials of electrical power cable are used in accordance with 18 specifications of IEC, ICEA, KS and KEPCO Spec. The validation of test methods were checked and established by solving the problems occurred during the test. These tests are tensile strength, hot creep, shrink back, environmental stress cracking, flammability, oxygen index, absorption coefficient, differential scanning calorimetry, amount of ion in semiconductor, void, amber, contaminant and water tree etc. The performance test of power cable made by A, B, C, D company were evaluated and compared.

Thermal and mechanical properties were investigated in several semi-conductive materials which is composed of carbon black and polymer. EVA, EEA, and EBA is normally used for matrix polymer and normally acetylene black and furnace black is used. Isothermal thermo gravimetric analysis is done as a function of atmosphere and temperature. In nitrogen atmosphere semicon compound was slowly degradaded but in ambient condition degradaded fast. So in the cable manufacturing, atmosphere and materials are very important.

The Low dielectric properties of epoxy/Annealing $SiO_2$ composites using Annealing new material of nanosized amorphous particles were investigated as function frequency, temperature and filler contents composition. The dielectric constant decrease with increasing frequency and also increase with increasing ambient temperature. The dielectric constant decrease with increase annealing filler contents for epoxy base. The result of x-ray diffraction could obtained single crystal of annealing $SiO_2$ from 500nm amorphous $SiO_2$ powder.

Nanostructured materials are attracting increased interest and application. Exciting perspectives may be offered by electrical insulation. Epoxy/Organoclay nanocomposites may find new and upgraded applications in the electrical industry, replacing conventional insulation to provide improved performances in electric power apparatus, e.g, high voltage motor/generator stator winding insulation, dry mold transformer, etc. This paper shows that electrical and thermal properties of epoxy/organoclay nanocomposites insulating materials for dsc, dielectric constant, I-V characteristics, breakdown volatge, can improve significantly with respect to the basic, virgin materials.

전력선 통신용 비접촉식 커플러는 고속형(2~30 MHz)과 저속형(100~450KHz)으로 나누어 볼 수 있는데, 고속형은 현재 국내에서 독자적으로 개발되어 다양한 모델이 적용되고 있는 상황이지만, 저속형은 시작품수준으로 제조되어 있으나 신호전송 특성의 향상절구가 필요한 상황이다. 전력선 통신용 커플러는 전력선 또는 모뎀으로 통신신호를 전달하는 기능을 하는 것으로서, 전력선 통신을 위한 핵심부품이다. 따라서 본 연구에서는 100~450 KHz 대역에서 사용 가능한 저속형 비접촉식 커플러를 제조하기 위해, 권선조건, 대전류형 자심재료의 모의 해석, 노이즈 필터조건, 임피던스 매칭, 하우징방법 등의 각 공정 변수를 확립하고자 하였다. 자심재료의 모의해석에서 자심재료의 높이와 전력선 도체 단면적 변화는 자심재료의 전류포화특성에 영향을 미치지 않으며, 유효길이와 에어-갭 크기가 증가할수록 전류포화특성은 향상되는데, 자심재료의 내경이 64 mm일 때 자심재료의 폭((외경-내경)/2)은 15 mm 이상이어야 하고, 에어-갭은 약 $600\;{\mu}m$ 정도의 에어-갭을 형성시켜야함을 확인할 수 있었다. 또한 저속용 비접촉식 커플러 제조조건 실험에서 내경${\times}$외경${\times}$높이가 $64{\times}94{\times}140mm$인 자심재료를 이용하여 권선 수와 에어-갭을 각각 3회, $400{\sim}600\;{\mu}m$ 삽입했을 때, 가장 우수한 특성을 나타내었다. 그리고 저역 통과 필터를 출력부에 내장하여 통신신호 이외의 노이즈를 제거할 수 있었다. 본 연구에서 제조된 300 A급 지중선용 저속형 비접촉식 커플러는 내경${\times}$외경${\times}$높이가 $58{\times}1144{\times}158mm$이고, 100~450 KHz 통신대역에서 약$7{\pm}2dB$의 삽입손실을 나타내었다.

나노결정 합금재료를 전력선 통신 커플러용 자심재료로 응용하기 위해서는 고주파 대역에서의 손실 특성이 제어되어야 한다. 즉 고속 전력선 통신을 위한 자심재료의 투자율 및 완화 주파수 등의 전자기적 특성은 30MHz까지 우수하고 안정적으로 유지되어야 하며, 높은 투자율 및 자속밀도, 공진주파수뿐만 아니라 낮은 전력손실 값을 가져야 한다. 따라서 본 연구에서는 나노결점 합금 리본 표면에 딥 코팅, 졸-겔법, 진공함침 등의 방법을 이용하여 PZT, $TiO_2$ 및 $SiO_2$ 등의 산화물 고저항층을 형성시켜 자기적 성질을 유지하면서 고주파 대역의 와전류 손실을 감소시켜 통신용 자심재료로의 응용성을 향상시키고자 하였다. PZT 슬러리의 제타전위 조절을 통해 최적의 분산조건을 얻을 수 있었고, 평균 150nm인 PZT 입자의 초미립자와 가소제, 분산제, 결합제의 첨가조건을 확립할 수 있었다. 딥-코팅은 슬러리 내 유지시간 10초, 인상속도 5mm/min로 30회 반복되었을 때 가정 우수한 특성을 나타내었으며, 고주파 대역에서의 손실 감소효과를 나타내었다. 그리고 졸-겔법에 의해 제조된 슬러리를 이용한 $TiO_2$와 $SiO_2$ 산화물 저항층 코팅을 통해 금속 알콕사이드의 혼합조건 및 저항층 형성용 슬러리의 제조조건을 확립하였고, 합금 리본표면에 균일하고 우수한 점착력을 가지는 저항층을 형성시킬 수 있었으며, 이에 따른 코어손실의 감소효과를 나타낼 수 있었다. 또한 진공 함침법을 통한 저항층 형성에서, $TiO_2$ 나노분말을 표면 저항층으로 코팅했을 때, 가장 높은 코어손실 감소효과를 나타내었다. 한편, 표면 저항층이 형성된 나노결정 합금으로 제조한 자심재료를 이용하여 전력선 통신용 비접촉식 커플러에의 적용과 시험을 통해 고주파 손실 감소효과에 의한 신호전송 특성과 전류특성을 향상시킬 수 있었다.

전력선 통신(Power Line Communication)은 최근 전력선을 이용한 통신기술의 발달과 더불어 세계적으로 관심도가 높아지고 연구 개발 및 자본 투자가 활발히 진행되고 있으며, 안정적인 네트워크를 구성하기 위해서는 고주파 전력선 통신 신호를 차단하는 블로킹 필터가 반드시 적용되어야 한다. 전력선 통신용 블로킹 필터는 광대역의 주파수 특성과 높은 신호감쇄 특성 및 대전류 특성이 요구되며, 이러한 특성을 구현하기 위해서는 블로킹 필터의 핵심부품인 자심재료의 고투자율 및 대전류화가 이루어져야 한다. 따라서 본 연구에서는 우수한 전 자기적 특성이 균일하게 유지되고, 전력선에 흐르는 대전류에 의한 자심재료의 포화가 발생하지 않도륵 새로운 자심 재료를 설계하여, 전력선 통신을 적용한 홈 네트워크 구축의 핵심 부품인 광대역 블로킹 필터를 개발하고자 하였다. 2350과 0.3 T의 투자율과 포화자속 밀도를 갖는 EI 형상의 자심재료를 해석모델로 설정하고 다중 에어 갭의 위치에 따른 전류와 자속밀도 변화를 유한요소 해석법으로 분석한 결과 자심재료의 대전류 특성에 지배적인 영향을 미치는 에어 캡의 삽입 위치를 알 수 있었고, 새로운 해석 모델인 I 형상의 로드(ROD) 코어에 대해 수치해석을 수행하여, 100A의 통전 전류에서도 자기적으로 포화되지 않고 인덕턴스의 정밀 제어가 가능하고, 특성의 신뢰성과 대전류에 대한 안정성을 증가시킬 수 있는 인덕터를 설계하였다. 또한 수동소자를 이용한 LC 공진회로를 기본 구성으로 하고, 주파수 대역, 신호 감쇄율과 대전류 특성, 상용화를 고려하여 블로킹 필터 회로를 설계하였으며, 유한요소해석법을 적용한 전자장 모의해석을 통하여 최소의 크기를 갖는 I 형상의 자심재료에 $6{\Phi}$의 에나멜 동선을 6.5턴, 6턴 권선하여 2.5, $2.15\;{\mu}H$의 인덕턴스를 갖는 직렬 인덕터를 구현하였고 블로킹 필터를 구성하였다. 주파수에 따른 신호감쇄 특성을 5 Hz~1 MHz의 주파수 범위에서 측정한 결과 약 490 kHz~450 kHz의 주파수 대역에서 -70dB의 신호감쇄 특성을 나타냈다. 본 연구를 통해 개발된 100A급 광대역 블로킹 필터가 적용되어 상용화 될 수 있을 것으로 판단되며, 또한 모뎀 통신 주파수 대역에서 -70dB 이상의 높은 감쇄 특성을 갖기 때문에 신호차단 특성이 보다 우수할 것으로 사료된다.

Nickel oxide thin films were deposited by the DC magnetron reactive sputtering process under the conditions such as various oxygen flow rates(0, 3, 6, 8, 10 sccm) with constant 33 sccm argon flow rate for the sputtering time of 40 second with the power of 0.3 kW. Sheet resistances were measured by the four point probes. In order to observe discharge voltage characteristics according to the oxygen flow rates, the sputtering processes were performed under the powers of 0.2kW and 0.3kW. The feasibility of the coating system for high quality ferromagnetic thin films was tested through the electromagnetic simulation and the thin film thickness measurement from the experiment. It was shown that a discharge voltage was decreased under the low power and low oxygen flow rate, since the oxygen was quickly saturated on nickel target surface. The sheet resistance was increased as oxygen flow rate increased. The film thickness deposited by the coating system for ferromagnetic target was improved approximately 10% in comparison with previous coating systems.

We investigated the quench characteristics in integrated three-phase flux-lock type superconducting fault current limiter (SFCL), which consisted of three-phase flux-lock reactor wound on one iron core with the same turn's ratio between coil 1 and coil 2 for each single phase. To study the quench characteristics of the SFCL, the experiments was performed on various fault type such as the single line-to-ground fault, the double line-to-ground fault, the triple line-to-ground fault. From the experimental results, the generated point of element resistances was different on various fault type.

변압기형 전류제한기는 1차측이 선로와 연결되어 있고 2차측은 고온 초전도 소자가 연결되어 있다. 사고 시 고온 초전도 소자의 부담을 줄이고자 2차측에 무유도 션트 저항을 연결하여 특성을 분석하였다. 션트가 없을 때 선로전류 제한율은 좋은나 2차측에 있는 초전도 소자가 부담해야하는 전력은 크다. 션트가 있을 때는 선로전류 제한율은 감소하는 반면 초전도 소자가 부당해야하는 전력은 크게 줄어들었다. 이때 2차측의 전압과 전류 중 전압의 감소 폭이 더 컸으며 션트저항 값이 작을수록 전압의 크기는 더 작아졌다. 결론적으로 션트저항의 연결에 따라 제한율은 낮아지지만 소자가 부담해야하는 전력은 크게 줄어든다.

전동기 코어 소재로 사용하는 무방향성 규소강판을 토로이달 형태가 아닌 전동기 적용 모형과 동일한 적층형으로 회전자 코어를 제작하여 초기 및 포화 자화 특성에 대한 고찰을 하였다. 초기자화 특성은 전동기가 처음 기동할 때 토크나 기동전류에 큰 영향을 미친다. 초기 자화 특성을 향상시키면 기동 전류를 줄일 뿐 아니라 전동기의 장기간 수명에도 영향을 미친다. 본 연구에서는 무방향성 규소강판의 가공, 설계, 제작 특성이 초기 기동 특성에 미치는 영향을 간접적으로 조사하기 위하여 초기로 포화 히스테리시스 특성에 대한 고찰을 실시하고 이들 요소가 갖는 여러 가지 가능성을 제시하였다.

변압기 코어소재로 사용하는 방향성 규소강판의 가공 방법에 따른 물성을 조사하기 위하여 테이프 와인딩 코어 형태, 곡률반경을 20, 30, 40mm로 하여 토로이달 형태 변압기 시료의 B-H 자성 특성을 조사하였다. 곡률반경이 40mm, 높이는 10mm의 비율에서 보자력은 0.02Oe, 포화자속밀도는 0.98, 1.85T으로 보자력(Hc)은 낮고 포화자속일도(Bs)는 제일 큰 값을 나타내었고, 국내에서 생산되고 있는 방향성 규소강판의 자속밀도값 보다 약간 크게 나타났으며, 본 연구로부터 방향성 규소강판을 이용하여 권자심 코어을 제작할 때 고려해야하는 탄성변형에 대한 중요성과 코어 소재의 가공방법이 자기적 특성에 미치는 영향을 고찰하였다. 또한 토로이달 코어형태의 변압기를 설계 제작시 높이와 곡율반경, 가공 방법에 따라 용량, 효율 등이 다르므로 사전에 소재의 물성을 면밀히 검토 후에 전기기기에 적용해야함을 재확인하였다.

We fabricated SmBCO coated conductors(CCs) on IBAD-MgO templates using co-evaporation method. IBAD-MgO templates consist of PLD-LMO/epi-MgO/IBAD-MgO/Ni-alloy and showed good in-plane texture of below FWHM 7 degree. Evaporation rates of Sm, Ba, and Cu were precisely controlled to get the optimum composition ratio after deposition process. To optimize the oxygen partial pressure of reaction region, wide range of the partial pressure was investigated from 1 mTorr to 15 mTorr. By reducing the oxygen partial pressure to 5mTorr, (103)grains in SmBCO layer have been increased. On the other hand, there were only (001)grains in SmBCO layer deposited at 15 mTorr $O_2$. Deposition temperature was also investigated from $600^{\circ}C\;to\;800^{\circ}C$ to make high Ic SmBCO CCs. SmBCO on IBAD MgO template showed that the Ic increased gradually at higher growth temperature to $800^{\circ}C$, which the highest Jc and Ic is $2.6\;MA/cm^2$ and 500 A/cm-w., respectively.

To verify the applicability of High Temperature Superconducting (HTS) cable system into the real grid, the HTS cable system with the specification of 22.9 kV, 1250 A, 100 m long was installed in the second quarter of 2006, and the long term field test has been in progress at the KEPCO's Gochang power testing yard. Apart from the conventional power cable, HTS cable system requires sufficient thermo-mechanical strength to endure a large temperature difference. To date, the KEPCO HTS cable system was cooled down and warmed to the room temperature several times to investigate the influence of thermal cycles experimentally. Dielectric properties, critical current dependance and heat losses were evaluated at each step of thermal cycle. The test results showed that thermal cycle did not induce the degradation of dielectric properties, and the critical current decreased to 5 % of the initial value.

The improvement of critical current property as well as the mechanical property is important for the application. The improvement of the critical current can be achieved by forming the nano size defect working as a flux pining center inside the superconductor. The nano size defect can be effectively formed by using neutron iradiation. All properties of most of materials after irradition become bad On the contrary, the critical current property of the superconductor is largely improved after irradiation.

본 연구는 $Bi_2O_3$, ZnO 및 $Nb_2O_5$로 이루어진 두 가지의 $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$와 $(Bi_{1.5}Zn_{0.5})(Zn_{0.5}Nb_{1.5})O_7$ pyrochlore를 제조한 후, ZBS 및 BZBS 유리를 각각 첨가하여 저온 소결 및 마이크로파 유전 특성을 고찰하였다. 두 가지의 pyrochlore에 대하여 하소 온도에 따른 상 합성 유무를 고찰한 결과 $900^{\circ}C$에서 단일 상을 갖는 pyrochlore를 제조할 수 있었다. 두 가지의 pyrochlore에 ZnO-rich ZBS 유리와 $Bi_2O_3$-rich BZBS 유리를 3, 5 wt%로 첨가한 후 $800{\sim}950^{\circ}C$에서 소결한 결과 ZBS 및 BZBS 유리를 5wt%를 첨가하였을 때 $900^{\circ}C$에서 소결이 가능하였다. 또한 마이크로파 유전 특성을 고찰한 결과, $(Bi_{1.5}Zn_{0.5})(Zn_{0.5}Nb_{1.5})O_7$의 pyrochlore는 고주파에서 유전 특성 측정이 되지 않았다. $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$의 pyrochlore의 경우 5 wt% ZBS 및 BZBS 유리를 첨가하여 $900^{\circ}C$에서 소결한 시편의 마이크로파 유전 특성은 ${\varepsilon}_r$= 62.8~68.3, $Q{\times}f$ value= 3,500~2,700 GHz을 나타내었다.

(Ba,Sr,Ca)$TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-acetate, Sr-acetate and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectric properties were investigated for various $Dy_2O_3$ doping contents. As a result of thermal analysis, the exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size of the specimens decreased with.

The $V_{1.9}W_{0.1}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $300^{\circ}C$ were 37.7, with a dielectric loss of 2.535, respectively. Also, the TCR values of the $V_{1.9}W_{0.1}O_5$ thin films annealed at $300^{\circ}C$ were about -3.7%/K.

In this paper, multilayer piezoelectric transformer for high power is presented. This piezoelectric transformer, with a multilayered construction in the thickness direction, was fabricated at the sintering temperature of $1055^{\circ}C$. The electrical properties of multilayer piezoelectric transformer as a function of Internal electrode structure, with same size, were investigated. Also, the multilayer piezoelectric transformer with different layer number of 5, 10, 15 layers, were investigated.

In this paper, in order to spray diesel fuel, multilayer actuator structured-ultrasonic nozzle and resonant inverter were manufactured. Multilayer actuator structured-ultrasonic nozzle as fabricated using PMN-PNN-PZT ceramics showing excellent piezoelectric characteristics. Its electrical and temperature properties were measured for investigating he applicability of stable ultrasonic nozle for spraying diesel fuel.

In this study, in order to develop low temperature sintering multilayer piezoelectric actuator, PMN-PNN-PZT system ceramics were fabricated using $Li_2CO_3-Bi_2O_3$-CuO as sintering aids and their piezoelectric and dielectric characteristics were investigated as a function of heating rate. At sintering temperature of $900^{\circ}C$, with increasing heating rate, electromechanical coupling factor(kp), mechanical quality factor(Qm) and dielectric constant $({\varepsilon}_r)$ were increased.

In the study, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator, PMN-PNN-PZT ceramics were fabricated using $Na_2CO_3,\;Li_2CO_3$ as sintering aids and their dielectric and piezoelectric properties were investigated according to the variations of $MnO_2$ as additives and sintering aids. At the sintering temperature of $900^{\circ}C$ and 0.1wt% $MnO_2$ as sintering aids, density, electromechanical coupling factor$(k_p)$, mechanical quality factor$(Q_m)$, piezoelectric constant$(d_{33})$, and dielectric constant $({\varepsilon}_r)$ showed the optimum value of $7.87[g/cm^3]$, 0.61, 1131, 1127 and 376, respectively, for multilayer piezoelectric actuator application.

압전 액츄에이터의 효율적 작동을 위해서는 변위량이 크고 이력이 없으며 응답이 빠르고 온도특성이 좋아야 하는 등의 여러 조건들을 만족시켜야 한다. 따라서 본 실험은 압전 효율은 높이고 압전 손실은 낮추기 위하여 Pb$[(Mn_{1/3}Sb_{2/3})_{0.04}\;Zr_x\;Ti_y]O_3$, 세라믹스를 선정하였으며 Zr/Ti의 변화(x=0.47~0.5, y=0.46~0.49)에 따른 각각의 압전 특성 및 강유전 특성을 조사하였다. 일반적인 산화물 합성법을 이용하여 압전 분말을 제조하였고 EMAS standard(6001)에 근거하여 시편을 제조하였다. XRD 관찰결과 모든 조성에서 perovskite구조의 단일상만을 나타내는 소결체를 얻을 수 있었으며 FE-SEM 관찰결과 $1250^{\circ}C$의 소결시편이 $2-3{\mu}m$의 grain size를 갖는 치밀한 미세구조를 나타내었다. 가장 우수한 압전특성을 나타내는 조성은 Zr/Ti의 비가 0.485/0.475 조성이었으며 그때의 전기기계 결합계수(Kp) 값은 62.5%였고, 기계적 품질계수(Qm) 값은 1004였다.

KNN계 세라믹스는 $400^{\circ}C$ 이상의 높은 큐리온도와 압전특성을 가져 Pb대체용 소재로 각광을 받고 있고 많은 연구들이 진행중이다. 하지만 potassium의 수분과의 반응성이 강하고 녹는점이 낮아 소결시 K2O의 휘발로 인해 화학양론적인 정확도를 맞추기가 어려운 단점을 가지고 있다. 이러한 단점을 보완하기 위하여 Hot pressing, Hot forging, SPS등 여러 가지 방법을 이용한 연구가 보고되었다. 본 연구에서는 낮은 소결밀도를 향상시키기 위하여 성형압과 성형방법을 달리하여 성형밀도에 따른 소결 밀도와 압전 특성 변화에 대하여 관찰하였다. 넓은 범위의 성형밀도를 얻기 위하여 낮은 성형압을 가할 수 있는 기계적으로 작동하는 press와 높은 성형밀도를 가할 수 있는 유압식 press를 사용하였고, 양산성을 고려하여 일반적인 세라믹 제조공정을 이용하였다.

층상구조의 전이금속 산화물($LiMO_2$, M=Co, Ni, Mn)은 리튬이차전지용 양극재료로 활발한 연구가 진행되고 있다. 차세대 리튬이차전지 시스템의 개발 및 고성능화를 위해서는 전지의 용량을 결정하는 핵심 부품인 양극재료의 고용량화 및 고안정화는 필수 불가결하다. 따라서 본 연구에서는 상업적으로 큰 장점이 있는 고상반응 공정을 이용하여 리튬이차전지용 양극소재를 제조하고, 소재의 전기화학적, 구조적인 특성을 평가하였으며, 다음과 같은 주제를 가지고 연구를 진행하였다. $LiCoO_2$ 양극재료는 리튬이온전지로 널리 사용되고 있다. 높은 에너지 밀도의 리튬이온전지를 얻기 위해서는 $LiCoO_2$ 양극재료가 고용량화 및 고밀도화를 가져야 한다. 여기서 $LiCoO_2$ 분말이 irregular particle morphology를 가지면 tap density가 $2.2-2.4gcm^{-3}$로 에너지 밀도가 낮으나, 구형 $LiCoO_2$의 정극재료는 tap density가 $2.6-2.8gcm^{-3}$로 상대적으로 energy density가 높아지는 효과가 있다. 구형 $LiCoO_2$ 양극재료를 합성하기 위해서는 chelating agent를 이용한 "controlled crystallization" 침전법을 사용하여 합성한 구형 코발트 수화물을 사용하고 있다. "controlled crystallization" 침전법에서 사용되는 chelating agent로는 주로 ammonia가 이용되고 있다. 본 연구에서는 chelating agent로 ethylene diamine을 사용하여 sodium hydroxides를 precipitation으로 침전 반응하여 구형 코발트 수화물을 합성하였다. 상기 방법으로 합성된 코발트 수화물과 리튬 수화물($LiOH{\cdot}H_2O$-고순도화학(高殉道化學))을 사용하여 고상법을 통하여 $LiCoO_2$를 합성하였다. 제조된 분말의 결정구조와 전기화학적 특성분석은 X-선 회절분석 및 리트벨트 구조정산, 그리고 충/방전 싸이클링을 수행하였으며, 분말의 미세구조 변화를 SEM을 이용하여 분석하였다.

강유전성 세라믹스 재료로써는 PZT계열의 세라믹재료가 널리 쓰이고 있다. 이는 우수한 유전 및 압전특성을 가지고 있으나, PbO을 다량 함유하고 있어 $1000^{\circ}C$이상에서 PbO가 급격하게 휘발되는 성질에 따라서 조성의 변동이 생겨 재현성이 어려우며 이를 방지하기 위하여 과잉 PbO를 첨가시키기 때문에 PbO휘발로 인한 강한 독성이 인체에 유해하다. 최근에는 Pb의 환경문제가 대두됨에 따라 이를 대체할 다른 물질의 개발이 활발하게 연구되고 있다. 대표적인 비납계 강유전 세라믹스인 $(Na_{0.5}K_{0.5})NbO_3$ ($d_{33}$ = 120 pC/N, Kp = 39%, Qm = 210, 이하 NKN라 표기) 조성은 $KNbO_3,\;NaNbO_3$ 상태도에 따라 순수한 NKN 세라믹스는 $1140^{\circ}C$에서 안정상을 가지나, 높은 온도로 인하여$Na_2O$와 $K_2O$가 쉽게 휘발됨에 따라 화학량 비의 변화가 생겨 이차 상을 형성하기도 한다. 따라서 본 연구에서는 $LiNbO_3$의 새로운 고용체를 추가시켜 기본 NKN조성에 압전성 및 고온에서의 상안정성을 향상시키고자 하였다. 최적 조성을 설계하기 위하여 (1-x)$(Na_{0.5}K_{0.5})NbO_3-xLiNbO_3$, x=(0,0.02,0.04,0.06,0.08)의 범위에서 조성을 변화시키면서 실험하였다. 시편 제작은 일반적인 세라믹스 소결 공정을 적용하였는데, $850^{\circ}C$에서 5시간 하소 후 $1080^{\circ}C$에서 2시간 소결하였다. 하소 및 소결 후에는 XRD분석을 통해 perovskite구조를 확인하였고, 미세구조 확인을 위해 주사전자현미경 (SEM)으로 관찰하였다. 압전특성을 평가하기 위해 압전 $d_{33}$-meter를 사용하였으며, impedance analyzer (HP 4194A)를 이용하여 전기적 특성을 측정하였다.

Wearable and ubiquitous micro systems will be greatly growing and their related devices should be self-powered in order to avoid the replacement of finite power sources, for example, by scavenging energy from the environment. With ever reducing power requirements of both analog and digital circuits, power scavenging approaches are becoming increasingly realistic. One approach is to drive an electromechanical converter from ambient motion or vibration. Vibration-driven generators based on electromagnetic, electrostatic and piezoelectric technologies have been demonstrated. Among various generator types proposed so far, piezoelectric generator possesses considerable potential in micro system. To overcome low mechanical-to- electric energy conversion, the piezoelectric device should activate in resonance mode in response to external vibration. Normally, the external vibration excretes at low frequency ranging 0.1 to 200 Hz, whereas the resonant frequencies of the devices are fixed as constant. Therefore, keeping their resonant mode in varying external vibration can be one of important points in enhancing the conversion efficiency. We investigated the possibility of use of multi-bender type piezoelectric devices. To match the external vibration frequency with the device resonant frequency, the various devices with different resonant frequency were chosen. Under an external vibration acceleration of 0.1G at 120 Hz, the device exhibited a peak-to-peak voltage of 2.8 V and a power of 0.5 mw in resonance mode.

Effect of co-doping on optical and electrical properties of $SnO_2$ based thin films were studied. $SnO_2$ ceramic targets with up to 50mol% $CuSb_2O_6$ were prepared by sintering mixed-oxide compact in the temperature range of $1100^{\circ}C{\sim}1300^{\circ}C$ in air. Thin films were then deposited onto glass substrates by pulsed laser deposition where substrate temperature was maintained in the range of $500{\sim}650^{\circ}C$ with oxygen pressure of 3m~7.5mTorr and energy density of $1Jcm^{-2}$. It was found that with the increase amount of dopant, the electrical properties of thin films tended to improve with the smallest resistivity value obtained at about 8mol% doping, further increase, however, usually impaired the optical transmission in the visible range.

$B_2Mg_{2/3}/Nb_{4/3}O_7\;(B_2MN)$ thin films and $Bi_{3/2}MgNb_{3/2}O_7\;(B_{1.5}MN)$ thin films were deposited as a function of various deposition temperatures on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system. Both of their thin films are shown to crystalline phase at $500^{\circ}C$, deposition temperature, using 100W RF power. The composition of them and structural micro properties are investigated by RBS spectrum and SEM, AFM. 200 nm-thick $B_2MN$ thin films were deposited at room temperature had capacitance density of $151nF/cm^2$ at 100kHz, dissipation factor of 0.003 and had capacitance density of $584nF/cm^2$ at 100kHz, dissipation factor of 0.0045 at $500^{\circ}C$ deposition temperature. Both of their dielectric constant deposited at room temperature and at $500^{\circ}C$ were each approximately 40 and 100.

In the present work, we have studied low temperature sintering and microwave dielectric properties of $ZnAl_2O_4$-zinc borosilicate (ZBS, 65ZnO-$25B_2O_3-10SiO_2$) glass composites. The focus of this paper was on the improvement of sinterability, low dielectric constant, and on the theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-ZBS glass composites, respectively. The $ZnAl_2O_4$ with 60 vo1% ZBS glass ensured successful sintering below $900^{\circ}C$. It is considered that the non-reactive liquid phase sintering (NPLS) occurred. In addition, $ZnAl_2O_4$ was observed in the $ZnAl_2O_4$-(x)ZBS composites, indicating that there were no reactions between $ZnAl_2O_4$ and ZBS glass. $ZnB_2O_4\;and\;Zn_2SiO_4$ with the willemite structure as the secondary phase was observed in the all $ZnAl_2O_4$-(x)ZBScomposites. In terms of dielectric properties, the application of the $ZnAl_2O_4$-(x)ZBS composites sintered at $900^{\circ}C$ to LTCC substrate were shown to be appropriate; $ZnAl_2O_4$-60ZBS (${\varepsilon}_r$= 6.7, $Q{\times}f$ value= 13,000 GHz, ${\tau}_f$= -30 ppm/$^{\circ}C$). Also, in this work was possible theoretical proof regarding of microwave dielectric properties in $ZnAl_2O_4$-(x)ZBS composites.

$Ba_{0.5}Sr_{0.5}TiO_3$(BST) films with different deposition temperatures were deposited on $Al_2O_3$ substrate by Nd:YAG Pulsed Laser Deposition(PLD). The deposition conditions to achieve high crystal structures and dielectric properties were optimized for both techniques. The structural characterization on the BST thin films was performed by X-Ray Diffraction(XRD) and Atomic Force Microscopy (AFM). Effects of post-deposition annealing of BST films were investigated. The best dielectric properties were obtained on $800^{\circ}C$ deposited BST film with post-deposition annealing at $1100^{\circ}C$ in flowing $O_2$ atmosphere for 2hours.

In this study, the structural and microwave dielectric properties of the $Sr_5Nb_4O_{15}$ cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the $Sr_5Nb_4O_{15}$ ceramics were prepared by the conventional mixed oxide method and sintered at $1350^{\circ}C{\sim}1500^{\circ}C$. The bulk density, dielectric constant and quality factor of the $Sr_5Nb_4O_{15}$ ceramics were increased with increasing sintering temperature. In the case of the $Sr_5Nb_4O_{15}$ ceramics sintered at $1500^{\circ}C$ for 5h, the dielectric constant, quality factor and temperature coefficient of the resonant frequency (TCRF) were 22.35, 16,577GHz, +13.40ppm/$^{\circ}C$, respectively.

In this study, piezoelectric properties of PZW-PMN-PZT multilayer actuator sintered at $900^{\circ}C$ low temperature have been investigated. The multilayer actuator was fabricated by tape casting methods. The density above $8[g/cm^3]$ was obtained at all the specimens. Also, according to increasing the number of multilayer, effective electromechanical coupling factor$(k_{eff})$ showed increasing trend. The $k_{eff}$ of multilayer actuator showed the maximum value of 0.283 at 11 layer. However, according to increasing the number of multilayer, mechanical quality factor(Qm') showed decreasing tend. The Qm' of multilayer actuator showed the maximum value of 920 at 5 layer.

In this study, in order to develop the composition ceramics of lead-free ultrasonic motor, (Na,Li)$NbO_3-BaTiO_3$ ceramics were fabricated using a conventional mixed oxide process and their piezoelectric and dielectric characteristics were investigated according to the $BaTiO_3$, substitution. $BaTiO_3$ substitution enhanced density, dielectric constants$({\varepsilon}_r)$ and electromechanical coupling factor$(k_p)$. However, mechanical quality factor was deteriorated. At the $BaTiO_3$ substitution of 4mol%, density, electromechanical coupling factor$(k_p)$, dielectric constants$({\varepsilon}_r)$ and piezoelectric constant$(d_{33})$ of specimen showed the optimum value of $4.493g/cm^3$, 0.236, 175, 70pC/N, respectively.

LTCC 소재로 응용을 위해 Mg-Si-O계 세라믹스에 glass frit을 첨가하여 소결 및 마이크로파 유전특성에 관한 연구를 진행하였다. $Mg_2SiO_4$를 기본조성으로 하고 $B_2O_3-ZnO-Na_2O-SiO_2-Al_2O_3$계 glass를 20~40wt%로 첨가하여 $900^{\circ}C$에서 1시간 소결하였을 때 glass 함량이 증가함에 따라 밀도$(g/cm^3)$ 및 유전율$(\varepsilon_r)$은 증가하였고 품질계수$(Q{\times}f_0)$ 값은 감소하는 경향을 보였다. $900^{\circ}C$에서 1시간 소결한 소결체의 유전특성은 유전율 $(\varepsilon_r)$ = 6.5, 품질계수 $(Q{\times}f_0)$ = 4,000(GHz), 온도계수 $({\tau}_f)={\pm}10ppm/^{\circ}C$로 우수한 특성을 확인하였다. 그리고 Glass Milling 효과에 따른 glass-ceramics 소결체의 미세구조, 마이크로파 유전특성을 비교 고찰하였다.

Two sorts of electrode composed of Sulpur/CNT/PVDF and Silver/CNT/PVDF were prepared by in situ chemical method and their electrochemical performance were evaluated by using cyclic voltammetry, impedance measurement and constant-current charge/discharge cycling technique. Also, composite electrodes were characterized by FE-SEM and BET. Raw materials such as CNT/Silver and CNT/Sulfur were mixed in ethanol, dried. These mixed materials were heated at 900 and $320^{\circ}C$ for 2hr, respectively in order to enhance contact among CNT electrodes. Electric double layer capacitor cells were fabricated using these mixed powder with polymer of PVDF. For the charging and discharging characteristics measured at scan rate of 1 mA/s, Supercapacitor of Sulphur-CNT-PVDF electrode showed a better performance than that of Ag-CNT-PVDF, which seems to be related with lower contact resistance of Sulphur-CNT-PVDF electrode.

기존에 전자부품들에 사용되어 온 봉착용, 결합용, 코팅용 유리들은 타유리와 비교하여 낮은 융점을 가지고 있으면서도 열처리 전후에 물리, 화학적으로 매우 안정한 특성을 가지고 있는 PbO를 50~85% 이상 함유한 유리들이 대부분을 차지해왔다. 그러나 PbO 성분은 산성비 등의 산에 용해되어 Pb이온이 생성되면서 환경오염의 원인이 되기 때문에 유해성분으로 규정하고 있다. 최근 유해물질의 규제가 강화됨에 따라 PbO를 대체할 수 있는 $B_2O_3,\;Bi_2O_3,\;V_2O_5,\;P_2O_5$ 등의 새로운 조성의 유리에 대한 연구가 활발히 진행되고 있다. 본 연구에서는 봉착용으로 사용되는 인산계 유리에서 RO계 첨가에 따른 TMA와 고온현미경, 필테스트를 통하여 접합성 및 열적특성 등의 변화에 대하여 조사하였다.

In this study, in order to develop multilayer piezo-actuator, PMN-PNN-PZT ceramics were fabricated using $Li_2CO_3,\;Na_2CO_3$, ZnO as sintering aids and their piezoelectric and dielectric properties were investigated according to the Bi substitution. Bi substitution enhanced electromechanical coupling factor$(k_p)$ and dielectric constant$({\varepsilon}_r)$. However, mechanical quality factor was deteriorated. At the sintering temperature of $870^{\circ}C$ and Bi substitution of 1mol%, density, electromechanical coupling factor$(k_p)$, mechanical quality factor$(Q_m)$, Dielectric constant$({\varepsilon}_r)$ and piezoelectric constant$(d_{33})$ of specimen showed the optimum value of $7.878g/cm^3$, 0.608, 835, 1603 and 397pC/N, respectively.

비휘발성 메모리 Fe-RAM은 빠른 정보처리 속도와 전원공급이 차단되었을 때도 계속 정보를 유지할 수 있는 비휘발성 특징과 더불어 저전압, 저전력 구동의 장점이 있어서, 차세대 메모리로 많은 주목을 받고 있다. FeRAM에 사용되는 강유전체는 주로 Pb(Zr,Ti)$O_3$가 적용되었는데, 최근에는 비납계 강유전체의 연구도 활발히 이루어지고 있다. 이러한 비납계 강유전체 중에서 가장 특성이 우수한 물질은 $(Bi,La)_4Ti_3O_{12}$ (BLT) 이다. 그런데 BLT는 결정 방향에 따른 강한 이방성의 강유전 특성을 나타내기 때문에 BLT 박막을 이용하여 Fe-RAM 소자 등을 제작하기 위해서는 결정의 방향성을 세심하게 제어하는 것이 매우 중요하다. 지금까지 연구된 BLT 박막의 방향성 조절결과를 보면, BLT 박막을 스핀 코팅 법 (spin coating method)으로 증착하고, 핵생성 열처리 단계를 조절하여 무작위 방향성을 갖는 박막을 제조하는 방법이 일반적이었다. 그런데 이러한 스핀 코팅법에서의 핵생성 단계의 제어는 공정 조건 확보가 너무 어려운 단점이 있다. 이러한 어려움을 극복할 수 있는 대안은 스퍼터링 증착법(sputtering deposition method), PLD (pulsed laser deposition)법 등과 같은 PVD (physical vapor deposition) 법의 증착방법을 적용하는 것이다. PVD 법으로 증착하는 경우에는 이미 박막 내에 무수한 결정핵이 존재하기 때문에 핵생성 단계가 필요가 없게 된다. PVD 증착법의 적용을 위해서는 타겟의 제조 및 평가 실험이 선행되어야 한다. 그런데 벌크 BLT 재료의 소결공정 조건과 전기적 특성에 관한 연구 결과는 거의 발표가 되지 않고 있다. 본 실험에서는 $Bi_2O_3,\;TiO_2,\;La_2O_3,\;Nb_2O_5\;and\;Al_2O_3$ 분말들을 이용하여 최적의 조성을 구하기 위하여 $Nb^{+5}$ 와 $Al^{+3}$을 $Ti^{+4}$ 자리에 소량 치환시켜 제조하였다. 혼합된 분말을 하소 후 pellet 형태로 성형하여 소결을 실시하였다. 시편을 1mm 두께로 연마하고, 양면에 silver 전극을 인쇄하여 전기적 특성을 측정하였다. 측정결과 $Ti^{+4}$ 자리에 $Nb^{+5}$를 치환하여 제조한 시편에서 $2P_r{\sim}31\;{\mu}c/cm^2$정도의 매우 우수한 특성을 얻었다.

Lead oxide-based ferroelectrics are the most widely used materials for piezoelectric actuators, sensors and transducers due to their excellent piezoelectric properties. Considering lead toxicity, there is great interest in developing lead-free piezoelectric materials, which are biocompatible and environmentally friendlier. Recently alkali oxide materials, including sodium - potassium niobate (NKN), have been given attention in view of their ultrasonic application and also as promising candidates for piezoelectric lead-free system. However, it is difficult to sinter such NKN-based materials via conventional sintering process. In this reason, many researchers have investigated hot press, hot isostatic press or spark-plasma sintering of NKN-based ceramics. In this study, as candidates for lead-free piezoelectric materials, dense (Na,K,Li)(Nb,Sb)$O_3$ systems were developed by conventional sintering process. The microstructures and piezoelectric properties of the (Na,K,Li)(Nb,Sb)$O_3$ systems were investigated as a function of variable compositions. The excellent piezoelectric and electromechanical properties indicate that this system is potentially good candidate as lead-free material for a wide range of electro-mechanical transducer applications.

Low Temperature Co-fired Ceramic (LTCC) technology has been used in electronic device for various functions. LTCC technology is to fire dielectric ceramic and a conductive electrode such as Ag or Cu thick film below the temperature of $900^{\circ}C$ simultaneously. The glass-ceramic has been widely used for LTCC materials due to its low sintering temperature, high mechanical properties and low dielectric constants. To obtain the high strength, addition of filler, the microstructure should have various crystals and low pores in a composite. In this study, two glass frits were mixed with different alumina size(0.5, 2, 3.7um) and sintered at the range of $850{\sim}950^{\circ}C$. The microstructure, crystal phases, thermal and mechanical properties of the composites were investigated using FE-SEM, XRD, TG-DTA, Dilatomer. When the particle size of $Al_2O_3$ filler increased, the starting temperatures for the densification of the sintered bodies, onset point of crystallization, peak crystallization temperature in the glass-ceramic composites decreased gradually. After sintered at $900^{\circ}C$, the glass frits were crystallized as $CaAl_2Si_2O_8\;and\;CaMgSi_2O_6$. The purpose of our study is to understand the relationship between the $Al_2O_3$ particle size and thermal properties in composites.

압전소자의 초음파 진동을 구동원으로 하는 초음파 모터의 토오크 특성을 개선하기 위하여 양면 Teeth 구조를 가지는 진행파 여진용 고정자를 설계하고, 이를 유한요소해석 프로그램 ATILA-GID를 이용하여 변위분포를 해석하였다. 한 면에만 Teeth 구조를 가지는 기존의 고정자를 이용한 초음파 모터가 소형화, 제한된 토오크 응용분야에 있어서 Direct drive actuation을 위한 발판을 마련해 주었다면, 본 연구에서 제안하는 양면 Teeth 구조의 고정자는 토오크와 효율, 출력특성의 개선과 함께 구조적인 특성에서 기인하는 온도 안정성에 의하여 그 응용분야의 확대를 기대할 수 있다.

In this study, the microwave dielectric property variations of (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites (x=0.3, 0.5 and 0.7) with 10wt% zinc borosilicate(ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying thes system to LTCC technology. The all composition addition of 10wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, a small amount of $Bi_2SiO_5$ as the secondary phase was observed in the all composition. The substitution of $ZnNb_2O_6$ on the $BiNbO_4$ composites increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the high sintering temperature and low dielectric constant of $ZnNb_2O_6\;than\;BiNbO_4$ ceramics. The increasing of $ZnNb_2O_6$ content from 0.3 to 0.7 in the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites with 10wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 28.1~15.6 in the dielectric constant$({\varepsilon}_r)$, 5,500~8,700GHz in the $Q{\times}f$ value.

Friction material in a piezoelectric system is a important part to affect to moving performance. In this paper, alumina ceramics $(AlO_2)$, silicon carbide (SiC), high speed steel and super-hard alloy (WC, Tungsten Carbide) having a hardness knoop of 1000 to 2000 $kg/mm^2$ were tested as a friction material of AF module. Even though $AlO_2$, SiC and high speed steel were a high-hardness material, $AlO_2$ and SiC were worn by a rough surface, and SiC is rusted in humidity condition. AF module using super-hard alloy has showed a stable moving performance in life time test.

Li이 첨가된 0.7(Ba,Sr)$TiO_3$-0.3MgO 후막 interdigital 커패시터를 연구하였다. Li이 첨가된 0.7(Ba,Sr)$TiO_3$-0.3MgO의 후막을 $Al_2O_3$ 기판 위에 형성하기 위하여 스크린 프린팅 방법을 이용하였다. $BaSrTiO_3$의 세라믹 물질은 높은 유전율(1MHz에서 500이상)과 낮은 유전 손실(1MHz에서 0.01)값을 가지고 있는 반면, $1350^{\circ}C$의 높은 온도에서 소결되는 단점이 있다. 따라서 본 연구에서는 $BaSrTiO_3$ 세라믹 물질의 유전특성을 향상시키고 $1350^{\circ}C$의 높은 소결온도를 낮추기 위해서, MgO(30wt%)와 Li(3wt%)을 $BaSrTiO_3$에 첨가하였다. 그리고 10um의 후막을 $Al_2O_3$ 기판 위에 스크린 프린팅 방법을 통해 형성한 후, 50um finger gap의 interdigital 커패시터를 Ag 전극을 이용하여 제작하였다. 샘플을 제작하기 전에, Frequency와 유전율의 상관관계를 알아보기 위해 3D simulator를 통해 시뮬레이션 하였고, 주파수와 온도별 유전 특성, 구조와 전암-전류에 대한 특성을 본 연구의 결과를 통해 토의 할 것이다.

The ferroelectric and electric properties of UV-irradiated bismuth lanthanum titanate (BLT) films prepared using photosensitive starting precursors were characterized. The effects of lanthanum doping on ferroelectric and electric properties were investigated by polarization-electric field hysteresis loops and leakage current-voltage measurements. X-ray diffractometer and ellipsometry were served to provide the information about the crystalline structure and thickness of the films after annealing. The images of the surface microstructure and direct-patterned BLT films were observed by using scanning electron microscopy. The effects of lanthanum doping on the electric properties of direct-pattern able BLT films and their direct-patterning were studied.

In this study, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator application, PMN-PZN-PZT ceramics were manufactured as a function of the amount of CuO addition and their dielectric and piezoelectric characteristics were investigated. With the amount of CuO addition, the physical characteristics of specimens decreased. The specimens showed the optimum value at 0.5wt%CuO addition. Their optimum values were density=$7.93g/m^3$, ${\varepsilon}_r$=1398, kp=0.560, Qm=1706, $d_{33}$=327pC/N, respectively.

In this study, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator, sensers, transducers, PMN-PNN-PZT ceramics were manufacrtured with the sintering temperature, and their piezoelectric and dielectric properties were investigated. At the composition ceramics sintered at $900^{\circ}C$, desity, dielectric constant$({\varepsilon}_r)$, electromechanical coupling factor(kp), piezoelectric constant$(d_{33})$ and mechanical quality factor(Qm) showed the optimal value of $7.86g/cm^3$, 1417, 0.634, 410pC/N and 1138, respectively.

To apply PDP panel, Soda lime glass(SLG) is cheeper than Non-alkali glass and PD-200 glass but has problems such as low strain temperature and ion diffusion by alkali metal oxide. In this paper suggest the methode that prohibits ion diffusion by deposing barrier layer on SLG. Indium thin oxide(ITO) thin films and barrier layers were prepared on SLG substrate by Rf-magnetron sputtering. These films show a high electrical resistivity and rough uniformity as compared with PD-200 glass due to the alkali ion from the SLG on diffuse to the ITO film by the heat treatment. However these properties can be improved by introducing a barrier layer of $SiO_2\;or\;Al_2O_3$ between ITO film and SLG substrate. The characteristics of films were examined by the 4-point probe, SEM, UV-VIS spectrometer, and X-ray diffraction. GDS analysis confirmed that barrier layer inhibited Na and Ka ion diffusion from SLG. Especially ITO films deposited on the $Al_2O_3$ barrier layer had higher properties than those deposited on the $SiO_2$ barrier layer.

현재 활발하게 진행되고 있는 이차전지 양극 물질 중 저렴한 가격과 친환경성으로 각광받고 있는 $LiMn_2O_4$ spinel 산화물은 여러 장점에도 불구하고 용량 값이 기존 알려져 있던 Co-계 산화물에 비해 떨어지고 cycle 특성 역시 현저하게 이어진다. 이는 Mn이 전해액과의 반응에 있어 구조적인 안정성을 지니지 못하여 용출되어 나타나는 특성이다. 이번 연구에서는 Mn의 용출을 저지하고 용량의 향상을 이룰 수 있는 전이금속 중 Fe산화물을 치환하여 구조적 안정성을 갖도록 하였다. Fe산화물 치환을 통해 기본적 물성의 변화와 전기적 특성 변화를 측정하였고 공정에서의 온도 및 입도에 따른 영향도 확인하였다. Fe산화물은 Mn 자리의 3+와 4+의 자리에 치환되어 용량을 증대시키고 사이클 특성을 10회 기준으로 20%가량 향상시키는 효과를 가져왔다.

Spinel cathode material $LiMn_2O_4$ is currently studied as a promising cathode material for lithium ion secondary batteries for future applications because of it is low cost, easy to be prepared and capable to be operated in high voltage range. However as a cathode material, $LiMn_2O_4$ performs a poor capacity retention which leads to short cycle life. In this study, stoichiometric $LiMn_2O_4$ was synthesized with granulation method with ion substitution to stabilize its structure and niobium doping to improve its conductivity. These well-mixed powders were calcined at $850^{\circ}C$ for 6 hours and its properties were investigated. Correlations of dopant and electrochemical properties were examined as well.

기계적 에너지를 전기적 에너지로 변화하는 에너지 변환소자인 압전 세라믹스는 액츄에이터, 변압기, 초음파모터, 초음파 소자 및 각종 센서로 응용되고 있으며, 그 응용분야는 크게 증가하고 있다. 최근 이러한 에너지 변화 소자는 앞으로 도래하는 ubiquitous, 무선 모바일 시대의 휴대용 전자제품, robotics, 항공우주, 자동차, 의료, 건축, MEMS 분야 등의 대체 에너지원으로 응용하기 위한 연구가 진행되고 있다. 특히 인간의 동작 등과 같은 일상적인 동작으로 필요한 전력을 얻을 수 있고, 세라믹 소자를 이용하기 때문에 전자노이즈가 발생되지 않을 뿐 아니라 반영구적으로 사용할 수가 있어서, 기존 이차전지, 연료전지를 대체 또는 보완 할 수 있는 방안도 검토되고 있다. PZT계 세라믹스는 높은 유전상수와 압전특성으로 전자세라믹스분야에서 가장 널리 사용되어지고 있지만 $1200^{\circ}C$이상의 높은 소결온도 때문에 $1000^{\circ}C$ 부근에서 급격히 휘발되는 PbO로 인한 환경오염과 기본조성의 변화로 인한 압전 특성의 저하가 문제시되고 있다. 또한, 적층 세라믹스의 제작 시 구조적 특성상 내부 전극이 도포된 상태에서 동시 소결이 필요한데, 융점이 낮은 Ag전극 대신 값비싼 Pd나 Pt가 다량 함유된 Ag/Pd, Ag/Pt 전극이 사용되고 있어 경제적인 문제가 발생하게 된다. 따라서 순수 Ag 전극을 사용하거나, Ag의 비율이 높은 내부 전극을 사용하기 위해서는 $950^{\circ}C$ 이하에서 소결되는 압전 세라믹스를 개발 하는 것이 필요하다. 따라서 본 연구에서는 압전특성이 우수한 $(Pb_{1-x}Cd_x)\;[(Ni_{1/3}/Nb_{2/3})_{0.25}Zr_{0.35}Ti_{0.4}]O_3$계의 조성을 설계하여, 소결온도를 낮추기 위해서 2단계 하소법을 이용하였다. 분말을 ball milling을 통해 24시간 동안 혼합하였다. 혼합된 분말은 $800^{\circ}C$에서 2시간 동안 하소하였다. 하소한 분말을 72시간 동안 ball milling 하여 최종 분말을 얻었다. 최종 분말에 PVB를 첨가하여 ${\Phi}21$ disk 형태로 성형한 후, $800{\sim}950^{\circ}C$ 소결을 하였다. 최종 분말 및 소결된 시편을 XRD분석을 통하여 상을 확인하였고, SEM을 이용하여 미세조직을 관찰하였다. 전기적 특성을 확인하기 위하여 두께 1mm로 연마한 시편에 Ag 전극을 도포하여 열처리한 후, 분극 처리하였다. 압전특성은 $d_{33}$ 미터로 측정하였고, impedance analyzer를 이용하여 주파수 및 impedance 특성을 측정하였다. 그 결과 $900^{\circ}C$에서 우수한 압전 특성 및 전기적 특성을 확보 할 수 있었다.

PMN-PZT 단층 및 다층 후막을 알루미나 기판위에 켄티레버 형태로 제작하여, 외부의 미소 진동에 의한 마이크로 발전 특성을 고찰하였다. 미소 변위에 의한 마이크로 발전 특성은 켄티레버의 무게(load), 진동수, 켄티레버의 길이 등에 밀접한 영향을 미치므로 이에 준한 요소를 고려하여 여러 가지 변수로 실험하였다. 연구 결과 서로 다른 소재의 기판과 발전체의 계면 분리 현상, 전극과 발전체의 분리 현상, 소결 온도 등이 소재 측면의 문제점으로 크게 대두되었으며, $5{\times}20mm$ 기판위에 형성된 발전체의 특성은 $1.1k{\Omega}{\sim}1M{\Omega}$의 부하에 따른 전압변동이 0.01V에서 3.6V로 큰 차이가 났다. 켄티레버의 로드의 변화에 대한 피크 전압은 $1.9{\sim}{\pm}2.8V$로 조사되었으며, 출력은 $0.45{\sim}4{\mu}W$로 측정되었다. 그러나 이런 외부 조건 보다 압전체의 공진 특성과 진동수는 가장 중요한 요인으로 나타났으며, 몇몇 문제가 해결될 경우 마이크로 발전소자로의 활용 가능성이 있는 것으로 조사되었다.

In this study, displacement values according to variation of laminated layer in piezoelectric body were measured. Samples were $40{\times}12[mm^2]$ and number of printed layer were varied from 3, 5, 7, 9, up to 11. Effect of printed layer variation on displacement properties of multilayer piezoelectric actuator was investigated. Also displacement values were estimated using Atila simulation tool. Difference in measured values and simulation results were compared.

This paper presents an omni-directional piezoelectric actuator which utilizes only one actuator. The actuator has a simple structure of cone type consists of two piezoelectric ceramics of ring type and electrodes divided four segments and a stainless steel body. To find the optimal operating condition of the actuator, the frequency characteristics of the actuator are analyzed by ATILA, FEM and measured by Impedance Analyzer. We have also developed a stage using the omni-directional actuator and an actuator driver circuit to create four sinusoidal waves with a variable frequency and phase difference.

최근 전기전자기기 및 광학기기 등의 소형화 및 고기능에 맞추어 구동 장치의 소형화가 필수적으로 요구됨에 따라, 보다 간단한 구조의 다양한 소형 압전 선형 모터에 대한 개발이 활발히 진행되고 있다. 본 연구에서는 굴곡 진동 모드를 갖는 평판형의 압전체와 탄성체로 구성된 압전 트랜스듀서와 두 개의 압전 트랜스듀서를 연결하여 타원 운동을 구현하기 위해, 굴곡 변형이 발생하는 한 쌍의 압전 트랜스듀서에 $90^{\circ}$ 위상차를 갖는 정현파를 각각 인가하여, 한 쌍의 압전 트랜스듀서를 연결하는 돌출부에서 타원궤적을 형성하는 소형 압전 액츄에이터를 설계하였다. 유한요소해석 프로그램인 ATILA를 이용하여 결합부의 타원 궤적의 형성하기 위한 압전 트랜스듀서의 최적 동작 주파수로 운동 모드를 결정하고자 한다.

Energy harvesting from the vibration through the piezoelectric effect has been studied for powering the wireless sensor node. For the driving wireless sensor node, the generated energy is required to store the capacitor or battery. For the rapid charging, higher voltage than battery's capacity voltage and a large current are necessitated. However, the piezoelectric energy harvester is generally featured as a high voltage and low current generator. As it is known that the generated current in the piezoelectric energy harvester is related to an area of electrode of piezoelectric ceramics, we fabricated the multilayer ceramics to increase effective area for the faster charging. The energy harvesting properties and charging characteristics of multilyaer ceramics were investigated and discussed.

A comparison study of carbon coating on $LiFePO_4$ was done with two different carbon sources-petroleum pitch and Ketjen black. Raman spectroscopy and transmission electron microscopy (TEM) analysis were applied to the carbon-coated $LiFePO_4$. $LiFePO_4$ which was carbon-coated with petroleum pitch showed more uniform carbon layer and ordered carbon structure. Such uniformity and ordered structure of carbon coating layer resulted in higher initial discharge capacity and better rate capability.

SOFC용 밀봉유리$({\sim}10.0{\times}10^{-7}/K)$의 열팽창 계수를 SUS430$({\sim}12.0{\times}10^{-7}/K)$ 인터커넥터에 매칭 시키기 위하여 모유리에 비하여 열팽창계수가 큰 $CaTiO_3\;({\sim}13.5{\times}10^{-7}/K)$ 입자를 필러로서 첨가하였다. 필러입자의 첨가량이 증가함에 따라 밀봉재의 열팽창 계수가 증가하고, 동일 함량의 필러를 첨가하는 경우 필러 입자의 크기가 작을 수록 밀봉재의 연화점 상승 폭이 커서 SUS430 기판과의 접합 상태가 불량해짐을 관찰하였다. 필 테스트, 접합시험, 미세구조 분석 등을 통하여 필러 입자 크기가 증가 할 수록 SUS430과의 접합이 가능한 범위 내에서 보다 많은 양의 필러를 첨가하는 것이 가능하기 때문에 열팽창 계수 제어가 용이하다는 것을 확인 할 수 있었다.

The surface was transformed to porous titanium oxide by the anodization of pure titanium. Titanium was anodized in non-aqueous and aqueous electrolytes at different potentials between 5 V and 150 V. Various electrolytes were compose of ethylene glycerol, $H_2SO_4,\;NH_4F\;and\;H_2O$. We obtained titania nanotube arrays on the micro pore of titanium. Micro pores and nano tubes were obtained by anodization at high potentials and low potentials, respectively. Morphologies of nanotubes and micro pore were characterized by FE-SEM. The unique surface structure is very attractive to electrical and medical applications such as gas sensor, biosensor, dental implant and stent.

This work shows the experimental results obtained from ageing at a temperature of 100 C for 48, 70 and 312 h, although the application of AC electrical tension in samples and the measuring of current leakage are presented. The measurements in samples were carried out with samples prepared from the deformulated commercial materials and respectively reformulated into thin films. The obtained results showed the mechanisms of conduction of samples in low and high electric fields. It was also identified an electric tension transition showing that in low fields it prevails the Ohm's law conduction, and in high electric fields it prevails the conduction of space charge limited current (SCLC). These results can support the natural rubber formulation process having as their main objective the reducing of the mechanisms that occur under high conduction current in high electric fields, which leads the material to a dielectric breakdown. Raw Natural rubber in Brazil is extracted from rubber trees (Hevea brasiliensis) in farms in So Paulo State by using some new plantation technology in smaller spaces, with trees placed a few meters from each other. In the Amazon rain forest the rubber trees are found naturally and their spacing may be of hundreds of meters or even kilometers between them. It is necessary to research this raw material from different internationally standard clones to characterize dielectric and electric properties for industrial applications. Moreover, this natural material has a low commercial price when compared to the synthetic ones.

Spacecrafts such as most of commercial satellites that are operating in the geostationary orbit can be subjected to intense irradiation by charged particles. The surface made of dielectric materials can therefore become probable sites for damaging electrostatic discharges. Thanks to a specially equipped chamber, the spatial environment can be reproduced experimentally in the laboratory. In this paper, the behavior of high energy electrons injected in polymers such as PolyMethylMetaAcrylate (PMMA) and Kapton is studied. Results obtained by surface potential technique, pulse-electro acoustic device and a cell based on the split Faraday cup system are analyzed and discussed.

Polyimide is widely used as a high-temperature insulating material. Space charge distributions in polyimide (PI) films strongly depend upon electric field, temperature, water content and so on. We observed space charge distributions in PI films with various water contents. When a dc field was applied to as-received PI films or water-treated PI films, positive and negative homo space charges were observed near the respective electrodes at 333 K. In dried PI films, the homo space charges were much reduced, and positive and negative hetero space charges in the bulk were clearly observed. The space charge amounts in water-treated PI films were smaller than in as-received ones, while the current density in water-treated PI film was larger than that in as-received one by two or more orders of magnitude. These suggest not only that the charge injection from the electrode is enhanced by absorbed water but also that absorbed water makes carriers mobile. The decay of space charge was also faster in water-treated PI than in as-received or dried one. This also supports the enhancement of apparent mobilities of carriers in PI by absorbed water.

AlN is used a wide variety of applications such as electroacoustic devices, blue diode and metal-insulator-semiconductor structures. AlN thin films were deposited on Si substrates by rf sputter technique with low temperature process. The orientation and morphology of AlN thin films at various power in the range from 150 to 300 w was studied. X-ray diffraction (XRD), full width at half-maximum (FWHM) and field emission scanning electron microscopy were employed to characterize the deposited films. The c-axis orientation along (002) Plane at experimental results was enhanced with the increasing of the rf power from 150 to 300 w and the surface morphology of the films showed a homogeneous and nano-sized microstructure.

본 논문에서는 DLC (Diamond-like carbon)박막이 가지는 높은 경도, 낮은 마찰계수, 전기적 절연성, 화학적 안정성 등의 특성을 이용하여, 리소그래피를 위한 resist나 hard coating물질로써 응용하기 위해, DLC 박막의 에칭에 관한 연구를 진행하였다. DLC 박막의 합성 과 에칭은 13.56 MHz RF plasma enhanced vapor deposition technique를 통해 이루어졌으며, DLC 박막은 150 W의 RF Power에서 메탄 $(CH_4)$과 수소$(H_2)$ 가스를 이용하여 약 300 nm의 두께로 제작되었으며, DLC박막의 에칭은 RF power의 변화 (50~250 W)와 산소 $(O_2)$가스의 유량변화 (5~25 sccm)에 따라 실시하였다. 에칭 되어진 DLC 박막의 표면 특성들은 AFM (atomic force microscopy)과 contact angle 장치를 사용하여 측정되었고, 측정된 결과로써 DLC 박막은 RF power와 산소 가스의 유량이 높을수록 etching rate는 증가하였고, 박막의 표면은 거칠어졌으며, 결국 DLC 표면에서는 산소에 의한 결합의 증가로 인해 친수성을 나타내었다.

리튬폴리머 전지용 정극활물질인 $LiFePO_4$를 수열법으로 합성하였다. 제조한 정극활물질 $LiFePO_4$는 X-ray 회절분석을 통하여 olivine 구조임을 확인하였다. 전극 제조 시 첨가된 도전재의 종류에 따른 전기화학적 특성변화를 알기 위하여, Acetylene Black, Super-Black, Multi-Walled Carbon Nanotube(MWCNT), SP270을 도전재로 제조된 정극활물질과 PVDF를 결합제로 사용하였다. 셀은 제조된 정극과 고체전해질 $25PVDFLiCIO_4EC_{10}PC_{10}$를 사용하고, 부극은 금속리튬으로 coin 타입의 cell을 조립하여 충방전을 진행하였다. 충방전 진행결과, Multi-Walled Carbon Nanotube(MWCNT)를 도전재로 사용하였을 경우, 초기 방전용량은 94mAh/g, 100cycle 후에는 약 93mAh/g인 기타 도전재를 사용하였을 때보다 안정하고 높은 방전용량을 나타내었다. 이때의 충방전 전류밀도는 0.1mAh/g이고 전압범위 는 2.5~4.3V이었다.

In this study, transparent conducting oxide indium zinc oxide (IZO) thin films were deposited by pulsed laser deposition (PLD) Process as a function of the deposition time on the glass substrates at $400^{\circ}C$. The crystal structures, electrical and optical properties of IZO films analyzed by XRD, AFM, and UV spectrometer. High quality IZO thin film with the resistivity of $9.1{\times}10^{-4}$ ohm cm and optical transmittance over 85% was obtained for sample when deposition time was 15min. Thin films with the preferred orientations along the c axis were observed as the deposition time increased.

We researched basic study about electrical characteristics of Zinc Selenide (Faraday Cell), which is known for various temperature of good-performance, that applied measuring current or protecting instrument by Optical Current Transducer, on Gas Insulated Switchgear. Measuring System consists of VCSEL produced 850nm IR Laser, Pin Photo Diode made of GaAs surveyed as Optical Power Meter, and Optical Fibers specified Multi-mode. We observed optical output changes during measurement of currents increasing by 100[A] in range from 0[A] to 1,000[A] and set temperature condition increasing by $5[^{\circ}C]$ in a range from $30[^{\circ}C]\;to\;60[^{\circ}C]$.

In order to increase the cost effectiveness of solar cells, module production should be treated more comprehensively. Back contact cells offer distinct advantage in the interconnection of cells to modules. Thereby Mo thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and substrate temperature conditions variously, structural and electrical characteristics were measured. For the manufacture of the Mo were vapor-deposited in the named order. Among them, Mo were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC power was controlled so that the composition of Mo, while the surface temperature having an effect on the quality of the thin film was changed from R.T$[^{\circ}C]$ to $200[^{\circ}C]$ at intervals of $50[^{\circ}C]$. Micro-structural studies were carried out by XRD (D/MAX-1200, Rigaku Co.) and SEM (JSM-5400, Jeol Co.). Electrical properties were measured by CMT-SR3000 Measurement System.

Investigation of improving the properties of UV photodetector which uses the wide bandgap of ZnO are under active progress. In this paper, transparent conducting aluminum-doped Zinc oxide films(AZO) were prepared by rf magnetron sputtering on glass(corning 1737) and p-Si substrate, were then annealed at temperature $400^{\circ}C$ for 2hr. The AZO thin films were deposited by RF sputtering system. HF power and work pressure is 120 W and 15 mTorr, respectively, and the purity of AZO target is 5N. The AZO thin films were deposited at 300, 400, $500^{\circ}C$, and $600^{\circ}C$. For sample deposited at $400^{\circ}C$, we observed best $V_r-I_{ph}$ of 0.94 mA and good transmittance.

SAW filter was designed by optimization technique using impulse sampling. To carry out characteristics of SAW filter the uniform IDT was adapted. And SAW filter was fabricated on $LiNbO_3$ substrates to evaluate frequency response. To apply properties of photolithography, lift off method was used. Lift off method was superior to etch method in fabrication process, frequency response property was measured by network analyzer. From a measurement of acoustic property, SAW propagation velocity was 2663.5m/sec.

This paper reports the simulation results of piezoelectric microspeakers due to structural changes(diaphragm materials, corrugation width and electrode shapes). When we compared the dependence of diaphragm material properties, the microspeaker with LTO(Low Temperature Oxide) diaphragm shows higher deflection than that of silicon nitride diaphragm, even though the resonant frequencies are almost same in both cases. In case of circular-electrode microspeaker, the deflection of diaphragm is about $16\;{\mu}m$ at 20 V, and it decreases as the corrugation width is decreased. However, the deflection of diaphragm with the square-electrode reveals almost twice times higher value at the same applied voltage than the circular one, and it increases as the corrugation depths are decreased from $30\;{\mu}m\;to\;10\;{\mu}m$. The first resonant frequency of microspeakers present about 1.8 kHz in circular-electrode and 1.2 kHz in square-electrode, respectively.

$SnO_2$ has a high potential for electric and electronic applications. We have anodized pure tin metal and nano porous tin oxide film was obtained on pure Sn. Nano porous tin oxide were grown by anodization in nonaqueous-base electrolytes at different potentials between 5 V and 100 V. Pore size of ~100nm was observed by FE-SEM. Pore sizes as a function of applied voltage and anodizing time were characterized. We obtained nano porous tin oxide film having an uniform pore size at low temperature. High specific surface area of $SnO_2$ will be very useful for gas sensor, lithium battery, and dye sensitized solar cell.

Decay processes of accumulated charge in e-beam irradiated polymers during elevating temperature are observed using pulsed electro-acoustic measurement system. Since the polymeric materials have many superior properties such as light-weight, good mechanical strength, high flexibility and low cost, they are inevitable materials for spacecrafts. In space environment, however, the polymers sometimes have serious damage by irradiation of high energy charged particles. When the polymers of the spacecraft are irradiated by high energy charged particles, some of injected charges accumulate and remain for long time in the bulk of the polymers. Since the bulk charges sometimes cause the degradation or breakdown of the materials, the investigation of the charging and the decay processes in polymeric materials under change of temperature is important to decide an adequate material for the spacecrafts. By measuring the charge behavior in e-beam irradiated polymer, such as polyimide or polystyrene, it is found that the various accumulation and decay patterns are observed in each material. The results seem to be useful and be helpful to progress in the reliability of the polymers for the spacecraft.

In this work, the TiO2 pigment influence in HDPE dielectric strength was analyzed. Chemical and structural characterizations were made to identify changes during the processing and your influence in the electrical properties, formulations containing 0, 0.5, 1, 2.5, 4 and 6 of titanium dioxide were processed by extrusion and injection molding with stabilization-antioxidants, ultraviolet stabilizers and plasticizers. The electrical strength tests were analyzed by the statistical distribution of Weibull, and the maximum likelihood method. The high concentrations present lower values to electrical strength. The parameter could be using to insulator panicles dispersion. The TiO2 concentration variation shows that these incorporations implicate strength values increase has a maximum (5,35MV/cm). High pigment concentration induces a little falls in property values. Observing the parameter, minimum experiment electric field (Ebmin) and electric strength value, found that the best electric perform formulation was the formulation with 2.5% TiO2 weight.

Diamond-like carbon (DLC)박막은 높은 경도, 화학적 안정성, 높은 광 투과성을 가지고 있어, 공구강, 광학렌즈 및 플라스틱의 보호 코팅을 위해 응용되어진다. 본 연구에는 DLC 박막은 Silicon을 기반으로 하는 태양전지 반사 반지막으로 응용을 위해, 13.56 MHz RF 플라즈마 화학기상 증착 (RF-PECVD)법을 통해 합성되었다. DLC 합성 시 RF power는 150 W, 메탄 (CH4)가스의 유량은 6%~10% 조절되었다. 합성되어진 DLC 박막의 광학적 특성은 UV spectrometry, Ellipsometry를 사용하여 분석되었고, 경도는 Nano-indenter를 사용하여 측정되었다. 측정 결과 투과도와 굴절률 등의 광학적 특성은 탄소 조성비가 6%정도에서 가장 좋은 결과 값을 얻었으나, 물리적 특성인 경도는 탄소 조성비가 높을수록 증가하는 경향을 보였으며, Si기판과의 접착력은 32N 이상의 높은 값을 나타내었다. 결과로써, DLC 박막은 합성시 적절한 탄소 조성비를 통해 silicon을 기반으로 하는 태양전지 반사방지막으로 응용할 수 있다.

본 연구에서는 RF Magnetron Sputtering 법으로 94:6 wt%의 비율로 Sb가 첨가된 $SnO_2$ 타겟을 사용하여 실온에서 ATO(Antimony doped Tin Oxide) 박막을 증착하고, 열처리가 ATO 박막의 구조적, 전기적, 광학적 특성에 미치는 효과를 연구하고자 하였다. ATO 박막의 두께는 약 200 nm로 증착하였으며, 실험 조건으로는 Ar 유량을 100 seem, 진공도는 1, 5, 10 mTorr로 변화시켰으며 스퍼터링 파워는 100, 150, 200, 250 W로 조절하였다. 증착되어진 박막은 vacuum 상태에서 300, $600^{\circ}C$의 온도에서 열처리를 수행하였으며 결과적으로 스퍼터링 파워가 증가함에 따라 비저항이 감소하였고, 250 W의 파워와 10 mTorr의 공정압력 조건에서 $600^{\circ}C$로 열처리한 ATO 박막은 $5{\times}10^{-3}{\Omega}-cm$의 저항률과 85.3%의 높은 투과도를 가지는 우수한 투명 전도막을 얻을 수 있었다.

현재 투명전극의 재료로 ITO, ZnO, $SnO_2$등의 재료가 주로 이용되며, 낮은 저항률을 장점으로 가지는 ITO 박막이 가장 널리 이용되고 있으나, 가격이 비싸다는 단점을 가지고 있다. 이 밖에도 ITO 박막보다 가격이 저렴한 ZnO박막에 대한 연구가 많이 진행되고 있으나, 고온에서의 열적 불안정성 등의 문제로 상용화되지는 못하고 있다. 그러나 $SnO_2$ 박막은 ITO와 ZnO 박막보다 저항률이 다소 높지만, 우수한 열적, 화학적 안정성과 저렴한 가격으로 ITO 박막을 대체할 투명전도막 재료로 주목받고 있다. 본 연구에서는 $SnO_2$박막의 저항률 향상을 위하여 ATO(Antimony doped Tin Oxide) 박막을 RF Magnetron Sputtering 법으로 Coming glass위에 증착하였으며, 박막 증착시 산소 유량의 변화가 ATO 박막의 구조적, 전기적 그리고 광학적 특성에 미치는 효과를 연구하였다. 본 실험에서는 동작압력을 10 mTorr, RF power를 250W로 고정하고 $O_2$ 유량을 부분적으로 변화시키면서 증착되어진 ATO 박막을 분석한 결과 Ar:$O_2$의 비가 90:10일 때 최적의 가스비율로써 우수한 구조적, 전기적 그리고 광학적 특성을 보임을 확인하였다.

$LiFePO_4-C$ cathode materials were prepared by hydrothermal reaction and ball-milling. In order to enhance the electronic conductivity of $LiFePO_4$, 10% of acetylene black was added. During the ball-milling, different revolutions per minute (100, 200 and 300 rpm) was carried out. The structural and morphological performance of $LiFePO_4-C$ powders were characterized by X-ray diffraction and scanning electron microscope. The X-ray diffraction results demonstrated that $LiFePO_4-C$ powders had an orthorhombic olivine-type structure with a space group of Pnma. $LiFePO_4-C$ batteries were characterized electrochemically by charge/discharge experiments. The charge/discharge experiments indicated that $LiFePO_4-C$/Li batteries by 300 rpm of the ball-milling exhibited the best electrochemical performance with the discharge capacity of 126mAh/g at a discharge rate of $0.1mA/cm^2$.

Metal coating on ceramic powder has long been attracting interest for various applications such as superconductor where the brittle nature of high temperature ceramic superconductor was complemented by silver coating and metalloceramics where mechanical property improvement was achieved via electroless plating. More recently it has become of great interest in embedded passive device applications since metal coating on ceramic particles may result in the enhancement of the dielectric properties of ceramic-polymer composite capacitors. In our study, nickel ion-containing solution was used for coating commercial capacitor-grade $BaTiO_3$ powder. After filtering process, the powder was dried and heat-treated in 5% forming gas at $900^{\circ}C$. XRD and TEM were utilized for the observation of crystallization behavior and morphology of the particles. It was found that the nickel coating characteristics were strongly dependent on the several parameters and processing variables, such as starting $BaTiO_3$ particle size, nickel source, solution chemistry, coating temperature and time. In this paper, the effects of these variables on the coating characteristics will be presented in some detail.

Thin film of ZnO was deposited on various substrate by Nd:YAG Pulsed Laser Deposition(PLD) with a wavelength of 355nm. Further more, Thin filme of ZnO conducted by various temperature conditions. The surface morphology of the ZnO thin film was investigated by X-Ray Diffraction(XRD) and Atomic Force Microscopy(AFM). Effects of various substrates and Temperature conditions were analyzed. The best properties were obtained on $600^{\circ}C$ with post-deposition annealing at $600^{\circ}C$ in flowing $O_2$ atmosphere for several hours.

원자층 증착(Atomic Layer Deposition: ALD) 방법은 반응물질들을 펄스형태로 챔버에 공급하여 기판 표면에 반응물질의 표면 포화반응에 의한 화학적 흡착과 탈착을 이용한 박막증착기술이다. ALD법은 박막의 조성 정밀제어가 쉽고, 파티클 발생이 없으며, 대면적의 박막 증착시 균일성이 우수하고, 박막 두께의 정밀 조절이 용이한 장점이 있다. 원자층 증착 공정에서 짧은 시간 안에 소스를 충분히 공급하기 위한 방법으로는 소스 온도를 증가시켜 전구체의 증기압을 높여 반응기로의 유입량을 증가시키는 방법, 전구체의 공급시간을 늘리는 방법 등을 들 수 있다. 그러나 전구체 온도를 상승시키는 경우, 공정 조건의 변화가 요구되며 전구체의 변질에 의하여 형성된 막이 의도하는 막 특성을 만족시키지 못하게 되는 문제점이 발생될 우려가 있다. 그리고 전구체를 충분히 공급하기 위하여 전구체의 공급시간을 늘이는 방법을 사용하면, 원하는 두께의 막을 형성하기 위하여 소요되는 공정시간이 증가된다. 이를 해결하기 위해 수송가스를 이용한 버블러 형태의 전구체 공급 장치를 사용하지만 이 또한 전구체의 수명을 단축시키는 단점을 가지고 있다. 본 논문에서는 위의 문제점을 극복할 수 있는 새로운 개념의 수송가스 도움 전구체 공급 장치를 소개한다. 본 연구에서 사용된 수송가스 도움 전구체 공급 장치를 가지는 ALD 장비는 Lucida-D200 (NCD Technology사)이며 기판으로는 8인치 실리콘 웨이퍼를 사용하였으며 (TEMA)Zr을 사용하여 ZrO2 박막을 성장하였다. 수송가스 도움 전구체 공급 장치를 사용한 경우, 그렇지 않은 경우 보다 $30^{\circ}C$ 이상 전구체 온도를 낮출 수 있으며, 또한 증착 속도를 약 2배정도 증가시킬 수 있었다. 이들 박막들은 XRD, XPS, AFM 등을 이용하여 결정구조, 결합에너지, 표면 거칠기 등의 특성을 관찰하였다. 그리고 C-V, I-V 측정을 이용해 정전용량, 유전율, 누설전류 등의 전기적 특성을 평가하였다.

Carrier mobility was measured using time-of-flight (TOF) measurements to investigate the transport properties of holes and electrons in stabilized a-Se film. A laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of a-Se with thickness of $400\;{\mu}m$. The measured transit times of hole and electron were about $8.73\;{\mu}s\;and\;229.17\;{\mu}s$, respectively. The experimental results showed that the hole and electron drifting mobility were $0.04584\;cm^2V^{-1}S^{-1}\;and\;0.00174\;cm^2V^{-1}s^{-1}\;at\;10\;V/{\mu}m$.

ZnS/$Na_3AlF_6$/ZnS/Cu multi-layered thin film were simulated by EMP. EMP is a comprehensive software package for the design and analysis of optical thin film. ZnS and $Na_3AlF_6$ was selected as a high refractive index material and low refractive index material And Cu was selected as mid reflective material. Optical properties including color effect were systematically studied in terms of different low refractive index materials thickness. $Na_3AlF_6$ were changed 0.25, 0.5, 0.75, $1.0{\lambda}$. The thin film showed $0.25{\lambda}$ : blue, purple / $0.5{\lambda}$ : yellow $0.75{\lambda}$ : blue, purple, red / $1.0{\lambda}$ : yellow, green, blue, purple. It was becaused by different optical thickness of $Na_3AlF_6$. The maximum of optical interference by refractive layer.

압전세라믹 재료는 현재 압전 변압기, actuator, transducer, sensor, speaker 등에 광범위하게 이용이 되고 있다. 이 중에서 압전세라믹 소결체를 이용한 스피커의 제조는 가공이 까다롭고, 대형의 크기로 제작 시 소자가 깨지는 등의 많은 제약을 받고 있으며, 저음 특성이 떨어져 응용 범위가 한정되어 있다. 따라서 최근에는 이러한 단점을 극복하기 위하여 세라믹/고분자 복합체를 이용한 필름 스피커를 제작하고자 시도하고 있다. 이러한 세라믹/고분자 0-3형 압전 복합체를 이용할 경우, 제품의 경량화를 실현할 수 있고, 크기나 환경의 영향을 거의 받지 않으므로, 고기능성 스피커로의 응용에 적합할 것으로 보인다. 따라서 본 연구에서는 PZT계의 세라믹와 PVDF, PVDF-TrFE, Polyester, acrylic resin 등의 여러 고분자 물질과의 복합체를 제조하여 압전특성을 평가하였다. 본 실험은 먼저 $(Pb_{1-a-b}Ba_aCd_b)(Zr_xTi_{1-x})_{1-c-d}(Ni_{1/3}Nb_{2/3})_c(Zn_{1/3}Nb_{2/3})_dO_3$ (이하 PZT라 표기)의 최적화 조성을 선택하여, $1050^{\circ}C$에서 소결된 분말을 48시간 ball milling방법 로 약 $1{\mu}m$ 크기로 분쇄하였다. 고분자 물질들은 알맞은 용제들을 선택하여 녹였다. 그 다음 소결된 PZT분말과 고분자를 50:50, 60:40, 65:35, 70:30등의 무게 분율로 혼합하고, 분산제, 소포제 등을 첨가하여 3단 roll mill을 이용하여 충분히 분산시켜 페이스트 (Paste)를 제조하였다. 제조된 페이스트를 ITO가 코팅된 PET필름 위에 스크린 프린팅 법을 사용하여 인쇄하여 $120^{\circ}C$에서 5분간 건조하였다. 코팅된 복합체의 두께는 약 $80{\mu}m$ 정도로 측정되었다. Ag 페이스트를 이용한 상부 전극 형성에도 스크린 프린팅 법을 적용하였다. 이를 $120^{\circ}C$에서 4 kV/mm의 DC 전계로 분극 공정을 수행한 후 전기적 특성을 평가하였다. 유전특성을 조사하기 위해서 LCR meter (EDC-1620)를 사용하였고, 시편의 결정구조는 XRD (Rigaku; D/MAX-2500H)을 통해 분석하였으며, 전자현미경(SEM)을 이용하여 미세구조를 분석하였다. 압전 전하상수$(d_{33})$ 값은 APC 8000 모델을 이용하여 측정하였다. PZT의 혼합비가 증가할수록 비유전율 및 압전 전하 상수 등의 전기적 특성이 증가되었다. 또 여러 고분자 물질 중에서 PVDF-TrFE 수지가 가장 우수한 특성을 보였다. 이는 PVDF-TrFE 수지가 압전성을 나타내기 때문인 것으로 판단되었다.

On-chip micro humidity sensor, using $CN_x$ films for the sensing material, was designed, simulated, and fabricated with Op amp based readout circuit and diode temperature sensors. To compensate the temperature and other gases, two methods were applied. One is wheatstone-bridge with reference FET that eliminates other undesirable chemical species, and the other is a diode temperature sensor to compensate the temperature effect. $CN_x$ film can be a new humidity sensing material, and has a strong potential to adapt to smart sensors or multi-sensors using MEMS or nano-technology. A particular design technology for integration of sensors and systems together was proposed that whole fabrication process could be achieved by a standard CMOS process.

Polyethylene is widely used as the insulator for power cable. To investigate the conduction mechanism for power cable insulation under ac high field, it is very important to acquire the dissipation current under actual running field. Recently, we have developed the unique system, which make possible to observe the nonlinear dissipation current waveform. In this system, to observe the nonlinear properties with high accuracy, capacitive current component is canceled by using inverse capacitive current signal instead of using the bridge circuit for canceling it. As the results of these estimations, it was found that the dissipation current will depend on not only the instantaneous value of electric field but also the time differential of applied electric field due to taking a balance between applied field and internal field. Furthermore, two large peaks of dissipation current for each half cycle were observed under certain condition. In this paper, to clarify the reason why it shows two peaks for each half cycle, the film thickness dependences of dissipation current waveforms were observed by using the three different thickness LDPE films.

Polymers submitted to thermo/electrical stress suffer from ageing that can drastically affect their functional behaviour. Understanding the physico/chemical processes at play during ageing and defining transport regimes in which these mechanisms start to be critical is therefore a prime goal to prevent degradation and to develop new formulation or new materials with improved properties. It is thought that a way to define these critical regimes is to investigate under which conditions (in terms of stress parameters) light is generated in the material by electroluminescence (EL). This can happen through impact excitation/ionization involving hot carriers or upon bi-polar charge recombination (a definition that excludes light from partial discharges, which would sign an advanced stage in the degradation process). After a brief review of the EL phenomenology under DC, we introduce a numerical model of charge transport postulating a recombination controlled electroluminescence. The model output is critically evaluated with special emphasize on the comparison between simulated and experimental light emission. Finally, we comment some open questions and perspectives.

탄소나노튜브(CNT)의 tip 부분에 존재하는 금속 촉매 입자들은 불순물로써 나노전자소자에 응용하는데 좋지 않은 영향을 미칠 수 있다. 또한, 바이오센서에서 target 바이오 물질과 반응하는 물질을 CNT에 고정시키기 위해서는 CNT-tip을 개방시키는 것이 중요하다. 본 연구에서는 성장된 CNT의 tip부분에 존재하는 금속 촉매 입자의 제거와 CNT-tip을 개방하기 위해 $HNO_3$의 농도 (20, 40, 60)와 etching 시간 (5, 10, 15, 20, 25 min)에 따라 최적의 조건을 찾는 실험을 하였다.

Titanium nitride (TiN) thin films are widely used for hard coatings due to their superior hardness. In this paper, we wanted see how the films properties are changed according to DC power. TiN thin films were deposited by direct current (DC) magnetron sputtering method using TiN compound target on silicon substrates. The films structural properties are examined by X-ray Diffractions (XRD) and tribological properties are measured by nano-indentation, nano-scratch tester, nano-stress tester. Especially in DC power of 150 W, the maximum hardness and the minimum residual stress of TiN film exhibited about 25 GPa and 1 GPa, respectively. And also, the critical load of TiN film prepared by magnetron sputtering method were measured over 30 N.

염료감응형 태양전지(Dye-sensitized Solar Cell; DSSC)의 에너지 변환효율을 높이기 위해 유리분말을 첨가하여 빛의 분산특성 및 빛의 이용률을 높이고 있지 알아보자고 실험을 하였다. 저온소성용, 고온소성용 두 가지 유리 분말을 각각 첨가한 경우 TiO2 광전극 박막표면에 유리분말의 잔류로 인한 영향을 X-RD로 분석 하였고 박막의 입자들의 형상변화와 분포를 알아보기 위해 FE-SEM으로 관찰하였으며 유리분말의 첨가량 별 광전류-전압 곡선으로부터 최적의 첨가량을 확인하였다.

In this paper, we developed an integrated miniaturized device which acquires and transmits the signal of ECG an interested heartbeat and body's temperature and humidity. Using an amplifier circuit on the electrodes and the radio frequency transmission, the developed system dispenses with the use of cables among the electrodes, amplifier, and the post processing system. The sensor signals are transmitted to the RF-wireless terminal that was developed using the micro controller Aduc812, LCD, RF-module (frequency 424MHz, 9600-bps). In results, the developed system improves not only the signal-to-noise ration in dynamic ECG & and body's temperature and humidity measurement, but also the user convenience.

For large scaled solar cells and photosensors CdS thin films of $2{\mu}m$ thickness have deposited on ITO glass substrate by chemical bath deposition methode in $300^{\circ}C$ electric furnace. The surface roughness and resistance of cadmium sulphide(CdS) thin films with different microstructures and morphologies was investigated by using a x-ray diffraction (XRD), a scanning electron microscope (SEM), an atomic force microscope (AFM), and a near-field scanning microwave microscope (NFMM). As the different substrate heat temperatures, the microwave reflection coefficient $S_{11}$ and intensity of the (002) diffraction peak was changed, and the surface morphology also has shown differently.

A lot of efforts have been paid to develop infrared imaging systems in last decades. Bolometer has a wide range of applications from military to commercial, such as military night vision, medical imaging system and so on. Bolometer is a resistive sensor that detects temperature changes through resistance change. To improve detecting ability, bolometer should have a good resistive film which has high temperature coefficient of resistance (TCR) value. Colossal magnetoresistance (CMR) $L_{1-x}A_xMnO_3$ (where L and A are trivalent rare-earth ions and divalent alkaline earth ions, respectively.) are received attention to apply bolometer resistive film because it has a high TCR property which was discovered in the metal to semiconductor phase transition temperature region. In this work, CMR films were deposited on various substrates in relative low substrate temperature by RF magnetron sputtering. The influence of deposition parameters such as substrate temperature, gas partial pressure, and so on have been studied. The structural and TCR properties of the films were also investigated for applying to microbolometer.

The transport property of stabilized amorphous selenium typical of the material used in direct conversion x-ray imaging devices was studied using the moving photo-carrier grating (MPG) technique and time-of-flight (TOF) measurements. For MPG measurement, the electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions have been obtained. For TOF measurement, a laser beam with pulse duration of 5ns and wavelength of 350 nm was illuminated on the surface of a-Se with thickness of $400{\mu}m$.

This paper presents characteristics of surface acoustic wave (SAW) gas sensor for detecting volatile gases such as ethanol gas by measuring phase shift of output signal. A delay-line with a center frequency of 400MHz was fabricated on 128o Y-Z $LiNbO_3$ substrates. Experimental results, which show the phase change of output signal under the absorption of volatile gas on sensor surface, were presented. The sensitivities of SAW delay lines coated with polyurethane films are greatly increased compared to those for uncoated devices. This SAW gas sensor system may be well suited for a high sensitivity electronic nose system.

High quality cathode with high deposition rate of thin films and long target life time is required for manufacturing TFT-LCD and semiconductor. We developed WV(wide view) sputtering cathode with wide erosion area and high deposition rate. Ti thin film thickness variation in WV cathode is below 5% for 380 kWh target life time. Al thin film thickness using normal cathode is decreased about 20%. By using WV cathode, target using efficiency was improved 40%. in comparison with normal cathode.

Polymer/nanoparticle hybrids have been increasingly studied because of their enhanced properties for organic light emitting devices (OLEDs). In this study, we made poly(p-phenylene vinylene) (PPV) nanohybrid films by incorporation of Ag and $SiO_2$ nanoparticles into the PPV. A possible interaction between nanoparticles was investigated and especially we focused whether there is a change in the interaction between $SiO_2$ or Ag nanoparticles and matrix or not. The current characteristics of PPV nanohybrid films were analyzed by I-V and EL measurements. The optical properties were also investigated by UV-Vis spectroscopy and photoluminescence measurements.

Zinc oxide (ZnO) has drawn much interest as a potential transparent conducting oxide (TCO) for applying to solar cell and front electrode of electro-luminescent devices. For the enhancement of electrical property of TCOs, dopant introduction and hybridization with conductive nanoparticles have been investigated. In this work, ZnO films were formed on glass substrate by using photochemical solution deposition of Ag nanoparticles dispersed or various metal (Ag, Cd, In, or Sn) contained photosensitive ZnO solutions. The usage of photosensitive solution permits us to obtain a micron-sized direct patterning of ZnO film without using conventional dry etching procedure. The structural, optical, and electrical characteristics of ZnO films with the introduction of metal dopants with/without Ag nanoparticles have been investigated to check whether there is a combined effect between metal dopants and Ag nanoparticles on the characteristics of ZnO film. The phase formation and crystallinity of ZnO film were monitored with X-ray diffractometer. The optical transmittance measurement was carried out using UV-VIS-NIR spectrometer and the electrical properties such as sheet resistance and conductivity were observed by using four-point probe.

ZnO film has been investigated during several decades because it has excellent optical property like a transmittance among the range of visible light for using transparent conducting oxide (TCO) films. But ZnO film has not enough conductivity for applying to TCO devices. Therefore we synthesized platinum nanoparticles and they incorporated into ZnO due to improve the electrical property of ZnO film by sol-gel synthesis method. Also, we fabricated photosensitive ZnO thin film containing Pt nanoparticles by sol-gel process and spin-coating for using photochemical solution deposition. Photosensitive ZnO film could carry out the direct-pattern which allow the etching process to be convenient. The optical and electrical properties of ZnO film with or without various atomic percent of Pt nanoparticles annealed at various temperatures were investigated by using UV-Vis spectroscopy and 4-point probe method, respectively. We characterized the ZnO thin film containing Pt nanoparticles using X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy.

The liquid crystal (LC) aligning capabilities treated on the Organic overcoat thin film surfaces by ion beam irradiation and rubbing method was successfully studied for the first time. The Organic overcoat layer was coated by spin-coating. In order to characterize the LC alignment, the microscope, pretilt angle, thermal stress, and atomic force microscopy (AFM) image was used. The good LC aligning capabilities treated on the Organic overcoat thin film surfaces with ion beam exposure of $45^{\circ}$ above ion beam energy density of 1200 eV can be achieved. But, the alignment of defect of NLC on the Organicovercoat surface at low energy density of 600 eV was measured. The pretilt angle of NLC on the Organic overcoat thin film surface with ion beam exposure of $45^{\circ}$ for 1 min at energy density of 1800eV was measured about 1.13 degree. But, low pretilt angles of NLC on the Organic overcoat thin film surface with ion beam exposure at energy density of 600, 1200, 2400, and 3000 eV was measured. Also, the pretilt angle of NLC on the rubbed Organic overcoat thin film surfaces was measured about 0.04 degrees. Finally, the good thermal stability of LC alignment on the Organic overcoat thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be measured.

In this study, liquid crystal (LC) aligning capabilities for vertical alignment on the $CeO_x$ thin film by thermal evaporation method were investigated. Also, the control of pretilt angles and thermal stabilities of the NLC treated on $CeO_x$ thin film were investgated. The uniform LC alignment on the $CeO_x$ thin film surfaces and good thermal stabilities with thermal evaporation can be achieved. It is considerated that the LC alignment on the $CeO_x$ thin film by thermal evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $CeO_x$ thin film surface created by evaporation. In addition, it can be achieved the good electro-optical (EO) properties of the VA-LCD on $CeO_x$ thin film layer with oblique thermal evaporation.

유기 발광 소자에서의 내장 전압을 변조 광전류를 이용하여 측정하였다. 내장 전압은 양극의 일함수와 음극의 일함수 차이에 해당한다. 실험적으로는 유기 발광 소자에 500W Xenon light(ORIEL Instruments 66021)로부터 나온 빛을 chopper(Stanford Research SR540)를 통해 유기 발광 소자에 조사시키면 소자에서 발생한다. 변조 광전류를 lock-in amplifier(Stanford Research SR530)를 이용하여 변조 광전류의 크기와 위상을 측정할 수 있다. 이때 변조 광전류 크기가 최소가 될 때의 외부 인가 전압을 내장 전압이라고 한다. 본 연구에서 사용한 소자의 구조는 양극/$Alq_3$/음극 구조이며, 양극으로는 ITO 혹은 ITO/PEDOT:PSS를 사용하였고, 음극으로는 Ba/Al을 사용하였다. 발광 층으로는 $Alq_3$(150nm)를 사용하였다. Ba층의 두께는 0nm에서 3nm까지 변화시켰다. Ba이 금속의 역할을 하기 위해서는 두께가 20nm 이상은 되어야 한다. 그러나 본 연구에서는 Ba의 두께가 최대 3nm이므로 금속의 역할은 하지 않을 것으로 예상되며, 음극의 일함수에 약간의 영향을 주었을 것으로 생각된다. 내장 전압은 ITO/$Alq_3$(150nm)/Ba/Al 소자 구조에서 1V를 얻었고, ITO/PEDOT:PSS/$Alq_3$(150nm)/Ba/Al 소자 구조에서는 2V로 나타났다. ITO와 Ba/Al 전극 사이에 PEDOT:PSS 층을 주입함으로써 내장 전압은 약 1V 증가하였다. 이것으로, Ba의 두께가 얇으면 음극의 전자 주입 장벽에 영향을 거의 미치지 않는다는 것을 알 수가 있다.

We have fabricated polymer light-emitting diodes(PLED) in a structure of Glass/ITO/PVK/Al. Poly(N-vinylcabazole) (PVK) was deposited on the ITO glass with the spin coating method. PVK thickness is respectively 500nm, 300nm, 250nm and 200nm with the spin coter rotation speed of 2000, 3000, 4000 and 5000rpm. V-I, wavelength-transmittance, P-L and SEM of the fabricated devices were measured. From the result of P-L measurement, it was kept the optic properties of PVK raw powder when PVK thickness is 250nm. The knee-voltage of PVK PLED with 250nm thickness was 7V.

In this work, we have simulated a 42-inch LED BLU which was based on 300 RGB LEDs. We have done an adjustment of LEDs' strip distance and a height of the top of the LED to the back of the LCD to get white color uniformity. So, we have changed simultaneously the distance between the top of the LEDs and the back of the LCD. Moreover, we set a fixed position for the horizontal of LED's pitch. And then, we have experimented and compared to our simulation data.

In this paper, we were confirmed the optical characteristics of LED module by changing ambient temperature and driving current. When we supplied same driving current, the brightness quality drops due to an increased ambient temperature. The difference of brightness properties came out more large according to an increased driving current. Moreover, peak wavelength become shifted by long wavelength and declined output power by increasing driving current.

The characteristics of indium-zinc-tin-oxide (IZTO)-Ag-IZTO multilayer grown on a PET substrate were investigated for flexible organic light-emitting diodes. The IZTO-Ag-IZTO (IAI) multilayer anode exhibited a remarkably reduced sheet resistance of 4 ohm/sq and a high transmittance of 84%, despite the very thin thickness of the IZTO (30 nm) layer. In addition, it was shown that electrical and optical properties of IAI anodes are critically dependent on the thickness of the Ag layer, due to the transition of Ag atoms from distinct islands to continuous films at a critical thickness (14 nm). Moreover, the IAI/PET sample showed more stable mechanical properties than an amorphous ITO/PET sample during the bending test due to the existence of a ductile Ag layer. The current density voltage-luminance characteristics of flexible OLEDs fabricated on an IAI/PET substrate was better than those of flexible OLEDs fabricated on an ITO/PET substrate. This indicates that IAI multilayer anodes are promising flexible and transparent electrodes for flexible OLEDs.

This paper reports on the deposition conditions and properties of ITO films used as electrode layer in a organic light emitting diodes on a PET substrate. The deposition technique employed was specially designed roll-to-roll sputtering. The oxide was deposited at room temperature in an argon and oxygen plasma on a transparent conducting ITO layer on a PET film. The influence of deposition parameters such as DC power, working pressure and oxygen partial pressure has been investigated, in order to obtain the best compromise between a high deposition rate and adequate electro-optical properties. Electrical and optical properties of ITO films were analyzed by Hall measurement examinations with van der pauw geometry at room temperature and UV/Vis spectrometer analysis, respectively. In addition, the structural properties and surface smoothness were measured by x-ray diffraction and scaning electron microscopy, respectively. From optimized ITO films grown by roll-to-roll sputter system, good electrical$(6.44{\times}10^{-4}\;{\Omega}-cm)$ and optical(above 86 % at 550 nm) properties were obtained. Also, the ITO films exhibited amorphous structure and very flat surface beacause of low deposition temperature.

PMMA plate with nano-sized pattern was synthesized on anodized aluminum oxide template by bluk polymerization method. Anodized aluminum oxide was used as a template to synthesize the PMMA plate with nano-sized pattern. The polymerization of MMA was performed at $75-79^{\circ}C$. It is verified from SPM results that the nano-sized pattern on synthesized PMMA plate was well transferred from that of anodized aluminum oxide template.

탄소나노튜브의 전계방출 특성은 그 길이에 많은 영향을 받으며 길이가 균질 할수록 전계방출에 참여하는 탄소나노튜브의 수가 증가하여 전자방출의 균일도가 향상되고 수명도 증가할 것으로 기대되고 있다. 이 논문에서는 탄소나노튜브의 길이를 인위적으로 제어하여 균질하게 하기 위해 오존을 이용하여 길이가 긴 탄소나노튜브만 선택적으로 제거하는 방법을 사용하였다. 오존에 의해 처리한 시편은 전에 비해 높은 균일도를 나타내고 수명도 약 4배가량 크게 향상되었다.

ICP-CVD(Inductively Coupled Plasma-Chemical Vapor Deposition)를 이용하여 플라즈마 처리에 따른 Al이 도핑된 ZnO(AZO) 박막의 표면 부착력과 굴절율, 표면거칠기에 관한 연구를 하였다. 플라즈마 처리는 인가전압, 시간을 변수로 하였고 반응 가스는 Ar을 사용하였다. 표면조성은 AFM, 광학적 특성은 UV-Vis 분광계를 이용한 광투과도 측정으로부터 굴절률과 밴드갭을 조사하였고 표면 부착력은 접촉각 분석기(제조사:Kruss)를 사용하여 조사하였다. 플라즈마 처리 시간이 길어짐에 따라 박막 표면의 거칠기가 커지고 부착력은 증가하는 것으로 나타났다.

A transflective liquid crystal displays driven by fringe field switching mode of new concept is being suggested. The FFS mode is known to have the different twist angle distribution at the position when an operating voltage is applied. We make the cell design by using the different twist angle which has some region decided on transmissive region and other region used to reflective region. By optimizing simulation condition in the concept, we proposed new tansflective LCDs using FFS mode with single gap and single gamma characteristics.

LED Packaging 과정 중 Die bond 재료로 Silver epoxy를 사용하여 Packaging 한 후 T3Ster 장비로 열 저항 값(Rth)을 측정하였다. Silver epoxy 의 접착 두께를 조절하여 열 저항 값을 측정하였고, 열전도도 값이 다른 Silver epoxy를 사용하여 열 저항 값을 측정하였다. Silver epoxy 접착 두께가 충분하여 Chip 전면에 고루 분포되었을 경우 그렇지 않은 경우보다 평균 4.8K/W 낮은 13.23K/W의 열 저항 값을 나타내었고, 열전도도가 높은 Silver epoxy 일수록 열전도도가 낮은 재료보다 평균 4.1K/W 낮은 12K/W의 열 저항 값을 나타내었다.

PDP용 녹색 $Zn_2SiO_4$:Mn 형광체의 발광특성과 결정성을 향상시키기 위해 co-dopant로 Mg를 첨가한 $(Zn_{1-x}Mg_x)_2SiO_4$:Mn 형광체를 합성하였다. 합성된 형광체의 발광특성을 PL로 조사한 결과, $Zn_2SiO_4$:Mn 형광체는 Mg의 농도에 관계없이 530nm에서 녹색 발광을 하였고, Mg의 농도가 0.5 mol%일 때 가장 높은 발광세기가 나타났다. 이것은 Zn과 이온반경이 비슷한 Mg가 치환되어 모체에서의 Mn으로의 에너지 전이가 증가하여 발광세기가 증가한 것으로 생각된다.

In order to make full color cholesteric displays, color filter-less R, G, B sub-pixel structured cholesteric LC cells have been studied. To make R, G, B colors, UV induced pitch variant chiral dopant was added to cholesteric LC mixtures. The concentration of the photo-sensitive chiral dopant was adjusted so that the initial state showed blue color and the color was changed from blue to green and red with increase of UV irradiation to the cholesteric cells. To prevent the mixing of R, G, B reflective sub-pixel liquid crystals, separation walls were formed using negative photo resister in boundary area between sub-pixels. Through the optimization of the material concentrations and UV irradiation condition, vivid R, G, B colors were achieved.

Highly ordered pore structures as a template for formation of seeds have been prepared by the self-organization process of aluminum oxidation. The a-Si films were deposited on the anodic alumina films and crystallized by laser irradiation. It was found that un-melted part of fine poly-Si grain formed by explosive crystallization (EX) lead super lateral growth(SLG) and occluded with neighbor grains. The crystallized grains along the distribution of seeds were obtained. This results show a great potential for use in novel crystallization for decently uniform polycrystalline Si thin film transistors (poly-Si TFTs).

Diamondlike carbon (DLC) coatings were deposited on alumina ceramic seals using a plasma immersion ion deposition technique (PIID). Then they were subjected to tribological tests using a pin-on-disc tribometer under a high load (1.3 GPa) and under elevated temperatures up to 400C. Coefficients of friction (COFs) were recorded and compared with that of the untreated alumina while the wear tracks were analyzed using SEM with EDS to characterize the DLC films. To enhance the DLC adhesion to the substrate, various interlayers including Si and Cr were deposited using the PIID process or an ion beam assisted deposition (IBAD) method. It was observed that the DLC coating, if adhering well to the substrate, reduced the COFs significantly, from 0.4-0.8 for the uncoated alumina to about 0.05-0.1, within the tested temperature range. The adhesion was determined by the interlayer type and possibly by the application method. Cr interlayer did not perform as well as the Si interlayer. This could also be due to the fact that the Cr interlayer and the subsequent DLC coating had to be done in two different processing systems, while both the Si interlayer and the subsequent DLC film were deposited in one system without breaking the chamber. The coating failure mode was found to be delamination between the Cr and the alumina substrate. In contrast, the Si interlayer with proper DLC deposition procedures resulted in very good adhesion and hence excellent tribological performance. Further study may lead to future DLC applications of ceramic seals.

The Liquid Crystal (LC) alignment uniformity is very important in LC devices. The alignment mechanism of LC molecules on a rubbed polyimide (PI) surface is very important for both LC fundamental research and application. So, Generally a rubbing method to align LC has been widely used to mass-produce LCD panels. But because rubbing method is contact method between rubbing fabric and indium-tin-oxide glass or flexible substrate, rubbing method has some defects, such as the electrode charges and the creation of contaminating particles. Thus we strongly recommend a non-contact alignment technique for getting rid of some defects of rubbing method. Most recently, the LC aligning capabilities achieved by ion-beam exposure on the organic and nonorganic thin film surface have been reported successfully. In this research, we studied the tilt angle generation and electro-optical performances for a NLC on homeotropic polyimide surfaces with ion-beam exposure. The LC aligning capabilities of a nematic liquid crystal (NLC) on a homeotropic PI surface using a new ion-beam method were studied. On the homeotropic PI surface, the tilt angle of the NLC by exposure ion-beam had a tendency to decrease as increased ion-beam energy density. And, on the homeotropic PI surface, the alignment character of the NLC with respect to ion-beam energy was good. And we achieved satisfactory result for EO character.

Recently, it is widely studied to liquid crystal (LC) alignment using ion-beam exposure. Because conventional rubbing method has some problems such as defects from dust and electrostatic charges during rubbing process. Therefore rubbing-free techniques like ion-beam method are strongly required. We studied LC alignment by controlling ion-beam energy density and electro-optical (EO) characteristics of twisted nematic LC on the polyimide surface. In this experiment, a good uniform alignment of the nematic liquid crystal (NLC) with the ion-beam exposure on the polyimide (PI) surface was observed. In addition, it can be achieved the good EO properties of the ion-beam-aligned twisted nematic liquid crystal display (TN-LCD) on PI surface.

In this study, we investigated liquid crystal (LC) alignment with ion beam (IB) that non contact alignment technique on polyimide and electro-optical characteristics of twisted nematic (TN)-liquid crystal display (LCD) on the polyimide under various ion beam angles. In this experiment, polyimide layer was coated on glass by spin-coating and Voltage-transmittance(VT) and response time characteristics of the TN cell were measured by a LCD evaluation system. The good characteristics of the nematic liquid crystal (NLC) alignment with the ion beam exposured polyimide surface was observed. In addition, it can be achieved the good EO properties, and residual DC property of the ion beam aligned TN cell on polyimide surface.

내장 전압의 측정은 전기흡수 방법과 변조 광전류 분광학을 이용하는 방법이 있으며, 우리는 이 논문에서 변조 광전류 분광학을 사용하여 내장 전압을 측정하였다. 소자에 인가 전압이 영일 때 양극과 음극의 일 함수 차이 때문에 내장 전압이 존재하며, 그로 인해 내장 전기장이 생긴다. 유기 발광 소자의 광전도도는 엑시톤이 자유전자와 정공으로 분리들 때 발생한다. 이 때 발생되는 광전류와 광전류의 위상 변화를 측정하여 내장 전압을 추정한다. 소자의 구조는 두 전극 사이에 단층으로 하여 만들었으며 모든 소자의 $Alq_3$ 두께는 150nm로 하고, 양극은 ITO를 사용하였고 음극은 Al과 LiAl을 100nm 두께로 하였다. 내장 전압의 측정 결과 ITO/$Alq_3$/LiAl의 내장 전압은 0.9eV로 측정된 데 반해 ITO/$Alq_3$/LiAl은 1.6eV로 측정되었다. 따라서, LiAl을 사용한 소자의 경우 Al을 사용한 소자에 비해 내장 전압이 0.7eV 증가되었다. 이는 LiAl의 일함수가 Al보다 낮은 값을 갖는 것과 일치하는 결과이다. 이런 결과가 나온 까닭은 LiAl을 음극으로 사용한 경우에는 자유로운 $Li^+$이 발생하여 유기물에 더 좋은 전자주입이 되도록 하여 소자의 전자 장벽을 낮추었기 때문에 전자의 주입이 활발하여 광전류의 이동이 용이했음을 알 수 있다.

High-efficiency white organic light-emitting diodes (WOLEDs) were fabricated with two emissive layers and a spacer was sandwiched between two phosphorescent dyes which were, bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (FIrpic) as the blue emission and bis(5-acetyl-2-phenylpyridinato-N,C2') acetylacetonate $((acppy)_2Ir(acac))$ as the red emission. This spacer effectively prevented a triple-triple energy transfer between the two phosphorescent emissive layers with blue and red emission that was showed a improved lifetime. The white device showed Commission Internationale De L'Eclairage $(CIE_{x,y})$ coordinates of (0.33, 0.42) at $22400\;cd/m^2$, a maximum luminance of $27300\;cd/m^2\;at\;0.388\;mA/cm^2$, and a maximum luminous efficiency of 26.9 cd/A.

Tin-doped indium thin film is outstanding material among transparent Conductive Oxide (TCO) materials. ITO thin films show a low electrical resistance(<$10^{-4}\;[{\Omega}{\cdot}m]$) and high transmittance(>80%) in the visible range. ITO thin films usually have been deposited on the glass substrate. In order to apply flexible display, the substrate should have the ability to bend and be deposited without substrate heat. Also properties of ITO thin film depend on what kind of substrate. In this study, we prepared ITO thin film on the polycarbonate (PC) substrate by using Facing Target Sputtering (FTS) system. Before deposition of ITO thin film, PC substrate took plasma surface treatment. The electrical and surface properties of as-deposited thin films were investigated by Hall Effect measurement, UV/VIS spectrometer and the surface property of substrate is investigated by Contact angle measurement.

We prepared indium zinc oxide (IZO) thin film for cathode electrode such as an application of flat panel display by using the facing targets sputtering (FTS) method at room temperature. The effects of input power and film thickness were investigated with respect to physical and optical properties of films such as deposition rate, electrical properties, microstructure and transmittance. We could obtain properties of IZO thin films of under $10^{-3}\;{\Omega}-cm$ in resistivity and the thin films of over 90% in transmittance. Also, we obtained IZO thin films which were an amorphous structure.

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

To investigate the ZnO LED which are interested in the next generation of short wavelength LEDs and Lasers, the ZnO thin films were deposited by RF magnetron sputtering system. The p-type ZnO thin film, fabricated by means of the ampoule-tube method, was used to make the ZnO p-n junction, and its characteristics was analyzed. The ampoule-tube method was used to make the p-type ZnO based on the As diffusion, and the hall measurement was used to confirm that the p-type is formed. the current-voltage characteristics of the ZnO p-n junction were measured to confirm the rectification characteristics of a typical p-n junction and the low leakage voltage characteristics. Analysis of ZnO LED V-I curve will provide a very useful technology for producing the UV ZnO LED and ZnO-based devices.

We report on the electrical, optical, and structural properties of indium zinc tin oxide (IZTO) anode films grown at room temperature on glass substrate. The IZTO anode films grown by a RF magnetron sputtering were investigated as functions of RF power, working pressure, and process time in pure Ar ambient. To investigate electrical, optical and structural properties of IZTO anode films, 4-point probe, Hall measurement, UV/Vis spectrometer, Field Emission Scanning Electron Microscopy (FE-SEM), and X-ray diffraction (XRD) were performed, respectively. A sheet resistance of $13.88\;{\Omega}/{\square}$, average transmittance above 80 % in visible range were obtained from optimized IZTO anode films grown on glass substrate. These results shown the amorphous structure regardless of RF power and working pressure due to low substrate temperature.

PMMA light guiding plate with nano pattern was fabricated by nano imprinting technology. Silicon mold was fabricated by conventional photolithography. A nickel stamper was fabricated by electroplating process using silicon mold. Nano imprinting was performed on PMMA plate at $140^{\circ}C$ under pressure of 20kN. The nano pattern on PMMA plate was investigated using FE-SEM.

MmSH injection molding method to fabricate light guiding plate with nano-sized pattern was developed. A stamper was fabricated through photolithography, dry etching, and electroplating processes. While the stamper with nano-sized pattern in mold was kept at $180^{\circ}C$ during injection process, that was cooled down to $90^{\circ}C$ quickly after the injection process. The nano-sized pattern on light guiding plate processed by MmSH injection molding method was well transferred from stamper compared to that processed by conventional injection molding process.

플라즈마 열화학기상 증착법으로 Fe-Ni-Co 3원계 측매합금을 이용하여 $442^{\circ}C$의 저온에서 다중벽 탄소나노튜브를 합성하였다. 수소의 유량이 일정할 때 아세틸렌의 유량이 감소함에 따라 성장속도가 증가하였다. 합성된 탄소나노튜브는 약 8.4 nm의 직경과 $5.5\;{\mu}m$의 길이를 보였으며, 기판에 대해 수직으로 성장되었다. 4인치 웨이퍼 위에서도 전면적에서 균일한 성장을 보였다.

본 연구에서는 유기물 발광 다이오드(OLED)의 효율을 향상시키기 위하여 버퍼층 역할을 하는 PEDOT:PSS (poly(3,4-ethylenedioxythiophene) : poly styrene sulfonate)의 공정조건을 확립하고 두께에 따른 전기적 광학적 특성을 조사하였다. PEDOT:PSS는 spin coating 방법으로 증착을 하였으며, 흘효과측정을 통하여 ITO기판과 유기버퍼층이 코팅된 기판의 전하운반체의 이동도와 전류-전압 특성을 조사하였다. 그리고 UV-vis spectrometer를 이용하여 광투과도, 굴절률, 밴드갭을 측정하였고 SEM을 이용하여 시료의 표면도 관찰하였다. 유기물 버퍼층(PEDOT:PSS)의 두께가 얇을수록 정공의 이동도가 향상됨을 알 수 있었다.

In this work, Organic Light Emitting Diodes using LiF as a electron-injecting interfacial have been fabricated for efficiency enhancements. This interfacial layer is interposed between Al/$Alq_3$ layer. The brightness and specific character as current density are higher than those of the device without it. To find best thickness of LiF layer, we used some samples with various thickness. The LiF interposition at the Al/$Alq_3$ interface encouraged the electrons injection and balances the injection numbers of hole and electron in the emission layer.

We have studied the optically compensated splay mode using reactive mesogen (RM) monomer to reduce setting voltage and phase transition time from initial bend to splay state. When the OCS cell has low pretilt angle close to $45^{\circ}C$, OCS state can be formed easily. The low pretilt angle was formed through the polymerization of UV curable reactive RM monomer at the surfaces. In this way, reorientation of the LC is well defined and thus the device shows better performances in setting voltage and phase transition time.

Here we describe the formation of a self-assembled film of thin multiwalled carbon Nanotubes(t-MWNT) modified with hydroxy groups through hydrogen peroxide treatment. Morphologies of t-MWNT films could be controlled by the various coating method, such as filtering, drop casting, spraying method, etc. The results show that on densification of the CNT suspension during drying, multiple hydroxy group-modified MWNTs can be self-assembled through strong surface hydrogen bond interaction while MWNTs usually exist an entangled state in the film. The interaction between t-MWNT was illustrated from Raman spectrum of spray coated films.

최근 고화질 카메라폰이 경박단소화 되는 경향에 따라 Plastic렌즈 또는 구면 Glass렌즈만으로는 요구되는 광학적 성능 구현이 힘들기 때문에 비구면 Glass렌즈에 대한 요구가 증가하고 있다. 이러한 비구면 Glass렌즈는 일반적으로 초경합금 성형용 코어를 이용한 고온압축 성형방식으로 제작되어지기 때문에 코어면의 초정밀 연삭가공 및 코어면 코팅기술 개발이 시급한 상황이다. 한편, 대표적인 난삭재 Silicon Carbide(SiC)는 광학적 특성 및 기계적 특성, 전기적 특성 등 우수한 특성을 가진 재료로서 우주망원경, 레이저 광 및 X선 반사용 미러 등 다종, 다양한 용도로 이용되고 있으며 전기, 전자, 정보, 정밀기기의 급격한 발전으로 SiC의 수요가 급격히 증가하고 있다. 비구면 Glass렌즈 성형용 코어를 SiC소재로 제작할 경우 성형용 코어의 수명향상, 렌즈 생산원가의 절감 및 코팅 과정의 간소화 등의 다양한 장점을 가지므로 SiC를 이용한 성형용 코어의 나노 정밀도급 초정밀 연삭가공기술의 개발이 필요하다. 본 논문에서는 3 메가픽셀, 2.5배 광학 줌 카메라폰 모듈용 비구면 Glass렌즈 개발을 목적으로 실험계획법을 적용하여 초경합금 성형용 코어의 연삭조건을 규명하였다. 초경합금 비구면 성형용 코어의 초정밀 연삭가공조건 및 결과를 바탕으로 난삭재인 Silicon Cabide(SiC)의 연삭가공조건을 구하고 이를 이용하여 비구면 Glass렌즈 성형용 코어를 초정밀 연삭가공하였다.

For various applications of liquid crystal displays (LCDs), the uniform alignment of liquid crystal (LC) molecules on treated surfaces is significantly important. Generally, a rubbing method has been widely used to align the LC molecules on polyimide (PI) surfaces. Rubbed PI surfaces have suitable characteristics, such as uniform alignment. However, the rubbing method has some drawbacks, such as the generation of electrostatic charges and the creation of contaminating particles. Thus, we strongly recommend a non contact alignment technique for future generations of large high-resolution LCDs. Most recently, the LC aligning capabilities achieved by ultraviolet and ion-beam exposures which are non contact methods, on diamond-like carbon (DLC) inorganic thin film layers have been successfully studied because DLC thin films have a high mechanical hardness, a high electrical resistivity, optical transparency, and chemical inertness. In addition, nitrogen-doped DLC (NDLC) thin films exhibit properties similar to those of the DLC thin films and a higher thermal stability than the DLC thin films because C:N bonding in the NDLC thin filmsis stronger against thermal stress than C:H bonding in the DLC thin films. Our research group has already studied the NDLC thin films by an ion-beam alignment method. The $SiN_x$ thin films deposited by plasma-enhanced chemical vapor deposition are widely used as an insulation layer for a thin film transistor, which has characteristics similar to those of DLC inorganic thin films. Therefore, in this paper, we report on LC alignment effects and pretilt angle generation on a $SiN_x$, thin film treated by ion-beam irradiation for various N ratios

In general, polyimides (PIs) are used in liquid crystal displays (LCDs) as alignment layer of liquid crystals (LCs). Up to date, the rubbing alignment technique has been widely used to align liquid crystals on the PI surface, which is suitable for mass-production of LCDs because of its simple process and high productivity. However, this method has some disadvantages. Rubbed PI surfaces include the debris left by the cloth and the generation of electrostatic charges during rubbing process. Therefore, rubbing-free techniques for LC alignment are strongly required in LCD technology. In this experiment, PI was uniformly coated on indium-tin-oxide electrode substrates to form LC alignment layers using a spin-coating method and the PI layers were subsequently imidized at 433 K for 1 h. The thickness of the PI layer was set at 50 nm. The LC alignment layer surfaces were exposed to an $Ar^+$ ion-beam under various ion-beam energies. The antiparallel cells and twisted-nematic (TN) cells for the measurement of pretile angle and electro-optical characteristics were fabricated with the cell gap of 60 and $5\;{\mu}m$, respectively. The LC cells were filled with nematic LC (NLC, MJ001929, Merck) and were assembled. The NLC alignment capability on ion-beam-treated PI was observed using photomicroscope and the pretilt angle of the NLC was measured by the crystal-rotation method at room temperature. Voltage-transmittance (V-T) and response time characteristics of the ion-beam irradiated TN cell were measured by a LCD evaluation system.

In this paper, the LC alignment characteristics of the NDLC thin film deposited by PECVD and sputtering were reported respectively. The NDLC thin film deposited using sputter showed uniform LC alignment at the 1200 eV of the ion beam intensity and pretilt angle was about $2^{\circ}$ while the NDLC thin film deposited using the PECVD showed uniform LC alignment and high pretilt angle at the 1800 eV of the ion beam intensity. Concerning the ion beam intensity, uniform LC alignment of the NDLC thin film deposited by the sputtering was achieved at the lower intensity. And the pretilt angle of the NDLC thin film deposited by sputter was higher than those of NDLC thin film that was deposited using the PECVD. The uppermost of the thermal stability of NDLC thin film was $200^{\circ}C$, respectively. However, NDLC thin film deposited by the PECVD showed stability at high temperature without defects, compared to NDLC thin film deposited by the sputter.

We studied optical simulation method for ultra slim backlight system. We designed 0.7mm thickness light guide plate and combined 48 white color LEDs for 12 inch wide size TFT-LCD. We designed flat shape PMMA light guide plate with both side patterned. It have vertical prism shape on upper side and ellipse dot pattern on the other side. We targeted 4500 nit brightness and uniform emission characteristic without hot spot or dark area. At first, we designed uniform emission area with more high brightness in center area and then, debugged light entering hot spot zone and direction of outgoing light flux. Although it was designing step, we obtained good result with reverse prism optical sheet and it had good repeatability because it was based on the stamper method in injection process without laser engraving or micro groove engraving method.

In this paper, we investigated the feasibility of applying ZnO:Al films to display devices as transparent electrodes, and reported the electro-optical (EO) characteristics of VA cells using ZnO:Al electrodes and compared them with those of VA cells using ITO electrodes. The experiment results show that a uniform vertical LC alignment and a large pretilt angle were achieved. Also, the good voltage-transmittance curve, response time, and capacitance-voltage characteristics were observed for the rubbing aligned VA-LCD using ZnO:Al electrodes m comparison with ITO electrodes. In other words, the vertical alignment mode based on the ZnO:Al electrodes showed appropriate electro-optical characteristics and high transparency in comparison with that based on the ITO electrodes. These results indicated that the transparent ZnO:Al electrodes of the liquid crystal displays could substitute the ITO electrodes.

We have demonstrated the characteristics on the variation of hole transporting layer in blue organic light-emitting diodes (OLEDs) using new blue fluorescent emitter. We fabricated two types of hole transporting layer structures that one is 4,4',4"-Tris(N-(2-naphthyl)-N-phenyl-amino)-triphenylamine (2-TNATA) of $600{\AA}$ as a hole injection layer, N,N'-diphenyl-N,N'- (2-napthyl)-(1,1'-phenyl)-4,4'-diamine (NPB) of $200{\AA}$ as a hole transporting layer and another device is NPB of $500{\AA}$ without the 2-TNATA. The devices without the 2-TNATA showed improved characteristic of the luminance and efficiency.

Organic light-emitting diodes (OLEDs) were fabricated with the electron dominant complex, 4,7-diphenyl-1, 10-phenanthroline (Bphen) into the traditional electron transporting material of tris (S-hydroxyquinoline) aluminum $(Alq_3)$, neat $Alq_3$ and Bphen as electron-transporting layers (ETLs), respectively. Use of the Bphen material results in efficient electron injection and transport, allowing for high luminous efficiency devices. The devices with neat $Alq_3$(Device1), 1:1 mixed $Alq_3$ : Bphen(Device2), and Bphen(Device3) have efficiency of 15.3cd/A, 16.9cd/A, 20.9cd/A, respectively, at $20\;mA/cm^2$. The efficiency characteristic of device with Bphen is best, but the device that is satisfied high efficiency and stability at once is observed in Device2.

In this study, we prepared ITO thin film on the polycarbonate(PC) substrate by using Facing Targets sputtering (FTS) system. After the external bending force was applied to as-deposited ITO thin films with fixed face-plate distance (L), we investigated how properties of those change. As a result, the crack density of films was increasing as bending frequency increased. In accordance with crack distribution, we observed that the resistivity value of ITO thin film increased.

For this study, terbium-doped yttrium aluminum garnet (YAG:Tb) phosphor powders were prepared via the combustion process using the varous reagents. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), Scanning Electron Microscope(SEM), and photoluminescence (PL). Single-phase cubic YAG:Tb crystalline powder was obtained at $1000^{\circ}C$ by directly crystallizing it from amorphous materials, as determined by XRD techniques. The SEM image showed that the resulting YAG:Tb powders had uniform sizes and good homogeneity. The photoluminescence spectra of the YAG:Tb nanoparticles were investigated to determinethe energy level of electron transition related to luminescence processes. There were three peaks in the excited spectrum, and the major one was a broad band of around 274 nm. Also, the YAG:Tb nanoparticles showed two emission peaks in the range of 450~500 nm and 525~560 nm, respectively, and had maximum intensity at 545 nm.

Al-N co-doped ZnO films were fabricated on n-Si (100) and homo-buffer layers in the mixture of oxygen and nitrogen at $450^{\circ}C$ by magnetron sputtering. Target was ZnO ceramic mixed with $2wt%Al_2O_3$. XRD spectra show that as-grown and $600^{\circ}C$ annealed films are prolonged along crystal c-axis. However they are not prolonged in (001) plane vertical to c-axix. The films annealed at $800^{\circ}C$ are not prolonged in any directions. Codoping makes ZnO films unidirectional variation. XPS show that Al content hardly varies and N escapes with increasing annealing temperature from $600^{\circ}C\;to\;800^{\circ}C$. The electric properties of as-grown films were tested by Hall Effect with Van der Pauw configuration show some of them to be p-type conduction.

IZO/Al multilayer anode films for flexible top emitting organic light emitting diodes (TOLEDs) were grown on PEN (polyethylen-enaphthelate) substrate using twin target sputter (TTS) system. To investigate electrical and optical properties of IZO/Al multilayer films, 4-point probe method and UV/Vis spectrometer were used, respectively. From a IZO/Al multilayer films with 100nm-thick Al, sheet resistance of $1.4{\Omega}/{\square}$ and reflectance of above 62% at a range of 500~550nm wavelength could be obtained, In addition, structural and surface properties of IZO/Al multilayer films were analyzed by XRD (X-ray diffraction) and FESEM (field emission scanning electron microscopy) and AES (auger electron spectroscope), respectively. Moreover, flexibility of IZO/Al multilayer anode films were examined by bending test method.

The rapid thermal annealing effect of transparent IZTO(indium zinc oxide) and IAZO(indium alminium zinc oxide) films grown on glass substrate for solar cell or flat panel displays(FPDs) was studied. We prepared IZTO using RF magnetron sputtering and IAZO using DC co-sputtering method. Subsequently, using rapid thermal annealing(RTA) system, prepared IZTO and IAZO films were annealed at 300, 400, 500, $600^{\circ}C$ for 90sec. In addition, Electrical and optical characteristics were measured by Hall effect measurement and UV/Vis spectrometer examinations, respectively. To analyze structural properties and surface smoothness of the IZTO and IAZO films, XRD and SEM examinations were performed, respectively. It was shown that IZTO and IAZO films exhibited microcrystalline structure over $400^{\circ}C$ and amorphous structural regardless of RTA temperature, respectively.

The PMMA plates with periodic ~200 nm nanosized patterned array were fabricated through the nanoimprint technique with their proper Ni stamper. The computer coding was also made with the Mathematica language software via RCWA (Rigorous Continuous Wave Analysis) and it is confirmed that simulation results are in good agreement with the experimental ones.

Dot-patterned carbon nanotube (CNT) emitters with excellent field emission properties were fabricated using photosensitive CNT paste. We carried out a parametric study on the compositions and the fabrication processes of the paste, in particular, by ball milling CNTs, which were optimized in terms of dot shapes and their field emission characteristics. The ball milling process improved the field emission current of the dot-patterned CNT emitters several times higher than that of the non-milled paste.

In this work, enhanced simulation is proposed by using impedance spectroscopy. The impedance spectroscopy is one of the popular methods to measure the electrical property of Organic Light Emitting Diodes. The results show that the equivalent circuit needs a inductance element linked by serial connection and the element of resistance is more important role to decide the electrical property.

Eye Glass Display (EGD) with microdisplay to realize the virtual display can make the large screen, so virtual image has been developed by using microdisplay panel. This paper shows study of spherical prism lens design and manufacture of a small size and light weigh EGD with 0.59" OLED panel. Code V is used and it designed an aspherical prism lens about eye relief 25mm and 42 degree of filed of view (FOV). With the application this aspheric prism lens to OLED type's microdisplay, virtual image showed 60 inch at 2m. It had less than 2% of distortion value and modulation transfer function in axial had 30% of resolution with 32 lp/mm spatial frequency. We made an injection molding bases to lens designed.

Optically transparent, highly conductive coating have been major theme of thin film science efforts for some years. In this work, t-MWNT(thin Multi-walled Carbon Nanotubes) are acid treated, then the stable dispersion of t-MWNTs in polar solvent such as alcohols, was achieved by sonication. The transparent conducting films are prepared using the one component solution of t-MWNT/epoxy binder via spray coating on glass substrate. The characterization of acid treated t-MWNTs was performed by Raman spectrometer. The opto-electrical properties of conducting films are analyzed by the binder concentration, and the effect of co-solvent on the compatibility and dispersibility of one component t-MWNT/epoxy binder solutions are discussed.

We investigated a resistor network model for the horizontal AlInGaN LED. Adding the proposed current density dependent relative quantum efficiency, the power simulation can be also obtained. Comparing the simulation and the measurement results for the LED with the size of $350{\mu}m$, the model is reasonable to simulate the forward voltage and the light output power. Using this model we investigated the optimization of the position and the number of the finger electrodes in a given chip area. It shows that the center disposition of the p-finger electrode in p-area is optimal for the voltage and best for the power. And the minimum number of the n-finger electrodes is best for the power.

VHF ICP (Very High Frequency Inductively Coupled Plasma) 반응기에서 반응기 압력, 수증기 유량, 플라즈마 출력, 반응기온도 등의 공정변수에 따른 수증기 분해특성과 수소생성거동을 실험하였다. 플라즈마 분해 특성은 OES(Optical Emission Spectroscopy)를 사용하여 분석하였으며, QMS(Quadrapole Mass Spectroscopy)를 이용하여 배기가스 성분을 분석하여, 수증기 분해거동 및 수소생성 효율을 조사하였다. 본 연구실에서 설계한 초고주파 유도결합 플라즈마는 고밀도 플라즈마 생성과 낮은 압력에서도 안정된 플라즈마 발생 특징을 나타내었다. 플라즈마 출력의 증가에 따른 수증기의 분해와 수소생성 거동은 개시영역, 선형증가영역, 포화영역의 세 영역으로 구분되는 특징을 나타내었다. 유량 및 압력의 증가에 따라 포화에 필요한 플라즈마의 출력이 증가되는 경향을 나타내었다. 본 실험의 온도범위에서는 온도 증가에 따른 수증기 분해 및 수소생성 증가효과는 플라즈마 출력의 영향에 비하여 매우 미미한 정도로 플라즈마의 높은 에너지 전달효과를 확인할 수 있었다. 따라서, 낮은 반응기 온도에서도, 유량 및 압력에 따른 포화 플라즈마조건을 설정할 경우, 높은 에너지 효율의 수소 제조가 가능함을 알 수 있었으며, 물분해 플라즈마를 이용한 저온 산화물 박막증착에의 적용도 기대된다.

본 연구에서는 반도체 플라즈마 장비 감시를 위한 CUSUM 제어 차트 설계기법에 관해 연구하였다. CUSUM 제어차트에 관여하는 설계변수의 다양한 조합에 대하여 플라즈마 장비의 감시 성능을 평가하였다. 평가를 위해 RF 정합망 감시시스템을 이용하여 플라즈마 임피던스 정합에 관여하는 정합변수에 대한 실시간 데이터를 수집하였으며, 여기에는 임피던스와 상위치에 대한 전기적 정보, 그리고 반사전력에 대한 정보가 포함된다. 평가결과, 설계변수의 조합에 대하여 감시 성능이 크게 달랐지만, 각 센서 정보의 감시 성능을 증진시키는 설계변수의 조합이 있었음을 확인하였으며, 이는 각 종 다양한 센서정보별 CUSUM 제어 차트의 설계가 필요함을 의미한다. 연구에서는 Raw 데이터 대비 성능 분석을 위해 CUSUM 제어 차트의 설계변수를 변수인 d와 ${\Theta}$값의 변화를 주어 다수의 (d, ${\Theta}$)의 조합에 따른 감시 성능을 평가하였으며, 평가에 이용된 데이터는 소스전력이 750 W, 압력이 15 mTorr, Ar 유량이 50 seem일 때 수집하였다.

신경망을 이용하여 반구형 유도결합형 플라즈마 장비에 대한 전자밀도의 예측모델을 개발하였다. 신경망으로는 Radial Basis function Network를 이용하였고, 신경망의 예측성능은 유전자 알고리즘을 이용하여 최적화하였다. 체계적인 모델링을 위해 $2^4$ 전 인자 (Full Factorial) 실험계획법을 이용하였다. 개발된 모델을 이용하여 공정변수에 따른 전자밀도의 영향을 고찰하였다. 전자밀도는 팁 위치(즉 챔버 높이)에 가장 많은 영향을 받았으며, 소스전력과 압력의 변화에 따른 전자밀도의 변화는 작았다. 팁 위치는 소스전력 변화에 영향을 받지 않았지만, 압력변화는 팁 위치에 따라 복잡하게 전자밀도에 영향을 미쳤다.

환경오염으로 인한 각종 질병 및 증후군 등의 발생으로 가정용 산업용에서 환경관련 기술들이 다양한 분야로 확대되고 있다. 본 연구에서는 양이온 및 음이온 양쪽이온을 최대한 발생시키며, 오존 발생량은 억제하고 소비전력을 절감하고자 Ag-Pd 전극을 적용한 세라믹스 클러스터를 개발하였다. Ag-Pd 전극과 매칭되는 세라믹스 조성을 개발한 후 적층공정 기술을 이용하여 후막형 클러스터를 제조하였다. 전극 패턴모양, 전극간 방전간격 및 전극 보호층의 두께에 따른 음이온 발생량을 측정하여 최적화를 위한 실험을 진행하였으며, 음이온 발생량 100만개이상, 오존발생량 0.6ppb인 특성을 확인하였다.

In electrode-less lamp, The key point in creating an efficient light source based on RF discharge is to minimize the RF power loss in the RF coupler which for Anderson's type of RF lamp is due to losses in the ferrite core. This loss depends on the particular ferrite material, its size, geometry, frequency in this kind of inductive lamp shows that the correct choice of discharge current has a crucial effect on the core loss. In this study, we measured Ferrite temperature in normal state, then analyzed electrical and optical characteristics according to ferrite shape. We were able to know that was ferrite of the antenna had relate closely with temperature and luminous of the lamp. Also we appraised temperature and electrical, optical properties during turn on the lamp.

Solid insulation exposed to voltage is degraded by electrical tree process. And the degradation of the insulation is accelerated by voltage application. For this experimental, specimen of electrical tree model is made by XLPE (cross-linked polyethylene). And the size of the specimen is $7^*5^*7mm^3$. Distance between needle and plane is 2 mm. Voltages applied to acceleration test are ranged 12 to 15 kV. And distribution characteristic of degraded stage is studied too. By PD detecting and data processing, discharge data was acquired from PD detecting system (Biddle instrument). The system presents statistical distribution of phase resolved. Moreover, the processing time of electrical tree is recorded to know the speed of degradation according to voltage. Finally, it's used PD classification by ANFIS method.

$SF_6$ gas used widely as insulating component in electric power industry has excellent in insulation and arc extinguishing performance in gas-insulated switchgear. However, the concern about eco-friendly alternative gas is currently rising, because $SF_6$ gas is one of the main greenhouse gases. As one of the study for $SF_6$ free technology, composite-insulation technology is focused in this paper. To analyze the influence by epoxy thickness change, the composite-insulation composed of dry-air and epoxy was used in this paper. To analyze AC breakdown by the epoxy thickness, needle-plane electrode was used and needle was molded by epoxy. Under the gas pressure ranged from 0.1 to 0.6MPa, the breakdown voltage of dry-air were measured in AC electric field. The data of composite-insulation were acquired by changing the thickness of epoxy used in each composite-insulation under the same condition.

Underground connectors in 154kV for the connection between power cables and power equipments represent a greater part of power system stability and reliability. This paper presents the performance evaluation of 154kV separable dry type plug-in connector of a company in Japan for transformers and Gas Insulated Switchgear. And the possibility of the application on domestic underground line was considered.

This study evaluated electrical characteristics of the manufactured arcing horn whose rated voltage and nominal discharge current were 18kV and 2.5kA, respectively. In this study, residual voltage and lightning impulse flashover voltage were examined. The arcing horn showed excellent electrical characteristics that residual voltage and lightning impulse flashover voltage were 55kV below and 121kV at 115mm, respectively. Therefore the manufactured arcing Horn is considered that it would show good performance for protecting electrical wires and line post insulators from lightning impulse, if it were applied to real fields.

Wire electrical explosion(WEE) has been used for the production of fine metal particles. In WEE, electrical powder was stored and compressed into capacitor and released to produce fine particles through evaporation and condensation. In this study, the effect of applied voltage on the size of copper powders was investigated. High tension was added up to the explosion device by dividing 4 steps. At voltages lower than 5.2 kV, the fraction of powders finer than $44{\mu}m$ was almost negligible. The effectiveness of explosion increased sharply with increased voltage over 5.8 kV. At the highest voltage of 6.4 kV, more than 80% of explosion products were finer than $44{\mu}m$.

This paper described the partial discharge (PD) measurement techniques for diagnosing gas-insulated switches in overhead power distribution system. A capacitive voltage probe to detect PD pulse was designed and fixed on the surface of a bushing. We also designed a coupling network to attenuate AC voltage by 270 dB, and a low-noise amplifier having the gain of 40 dB and 500 kHz~20 MHz 3 dB. From the calibration, it was calculated that the sensitivity of the measurement system was 0.94mV/pC. In the application experiment, we could measure a PD pulse of 45 pC.

Many electrical fires are occurred by leakage currents and sparks generated by a short circuit. Earth leakage circuit breakers (ELCBs) should be tripped at the moment of the faults mentioned above. In this paper, we described the tripping characteristics of ELCBs against parallel arcing faults. A diesel engine generator with the capacity of 375 kVA source was adopted to provide enough large current when a parallel arcing occurred. The experimental results showed that most ELCBs we experimented were not tripped against short-duration pulse currents produced by parallel arcing because the ELCBs are designed to be tripped by a large current with long duration similar to power frequency.

A large diameter plasma filled backward wave oscillator is investigated experimentally. The parameters of slow wave structure are chosen so that the oscillation frequency is high beam energy. Plasma is produced by the beam and it has favorable effects on beam propagation and Cerenkov oscillation.

The characteristics of slow wave structure employed for backward wave oscillator expected to be a high power microwave source are studied analytically. The slow wave structure is a sinusodially corrugated wall waveguide. The waveguide is designed and transmitted characteristics for microwave are measured in the air. There exist literatures on high efficiency of enhansed radiation from backward wave oscillators involving plasmastudied experimentally another results.

본 논문에서는 GIS 설계에 있어 기초가 되는 준평등전계 하에서의 가스 절연특성을 검토하기 위하여 순 $SF_6,\;N_2,\;CO_2$ 이들이 혼합된 2종 및 3종 혼합가스에 대해 가스압력 0.6MPa 이하에서 상용교류전압을 인가하여 실험에 의해 그 부분방전특성과 절연특성을 조사하였다. 특히 실용 전력기기의 경우 금속이물질 등의 혼입에 의해 기기 내에서 불평등전계가 형성되어 부분방전을 거쳐 절연파괴에 이르는 가능성이 있으므로 본 연구에서는 불평등전계 하의 절연특성을 검토하였다. 실험 결과 $SF_6/N_2$ 2종 혼합 가스에 비하여 $SF_6/N_2/CO_2$ 3종 혼합 가스의 교류 절연 특성이 향상됨을 확인하였다.

This paper describes the series-gap characteristics of transmission line arrester with switching and lightning impulse flashover test. The transmission line arrester exhibited external gap because it is must not flashover with switching impulse on the other hand it is must flashover with lightning impulse. In accordance, minimum and maximum length of series-gap was determinated with these tests. As gap length is increased flashover voltage was increased in the range of 315.4 kV~496.3 kV and negative polarity exhibited a high voltage. As a result, It was thought tat the series-gap length of transmission line arrester exhibited in the range of 580 mm~1100 mm.

This paper describes the evaluation of long duration current impulse withstand characteristics of ZnO blocks for high voltage surge arresters. Four ZnO varistors were manufactured with the general ceramic production method and three abroad varistors were also prepared to be compared. All varistors exhibited high density, which was in the range of $5.42{\sim}5.49g/cm^3$. In the electrical properties, the reference voltage of all samples was in the range of 5.11~5.72kV and the residual voltage was in the range of 8.314~9.305kV. In the long duration current impulse withstand test, sample 2 and 3 failed at the 2nd and 4th shot of series impulse currents, respectively, but the rest survived 18 shots during the test. Before and after this test, the variation ratio of the residual voltage of samples survived were below 1.7%, which were in the acceptance range of 5%.

In this paper, We studied the properties of a cable insulate capacity between surfaces with the variation of the interfacial breakdown. Because the fault was mainly occurred in this interface. The insulate trouble of a power cable is out of the interfacial parts, which breakdown the insulate breakdown capacity in a power cable. As a function of silicon oil and interfacial roughness were investigated. In this study, the analysis of electric field and the phenomenon of interfacial breakdown were improved by increased interfacial of oil, decreased surface roughness.

We have investigated dielectric polarization in organic light-emitting diodes using 8-hydroxyquinoline aluminum$(Alq_3)$ as an electron transport and emissive material. We analyzed the dielectric polarization of organic light emitting diodes using impedance. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of 40Hz to $10^8Hz$. We obtained dielectric constant and loss tangent (tan ${\delta}$) of the device. From these analyses, we are able to interpret a dielectric dispersion and dielectric absorption contributed by an interfacial and orientational polarization.

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine(CuPc) based field-effect transistor with different metal electrode. So we need the effect of the substituent group attached to the phthalocyanine on the surface potential was investigated by Kelvin probe method with varying temperature of the substrate. We were obtained the positive shift of the surface potential for CuPc thin film. We observed the electron displacement at the interface between Au electrode and CuPc layer and we were confirmed by the surface potential measurement.

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different metal electrode. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature. The source and drain electrodes were used an Au and Al materials. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with different electrode materials.

Low level laser has various therapy effects. This paper performed the basic study for fabricating the low level laser therapy apparatus, and one of the goals of this paper was to make this apparatus used handily. The apparatus has been fabricated using the laser diode and microprocessor unit. The apparatus used a 660nm Laser diode for blood stream improvement and was designed for a pulse width modulation type to increase stimulation effects. In result, we could get the light power of 660nm wavelength and the 1~10Hz irradiation frequency could be controlled stably.

We developed the light medical therapy apparatus for external injury cure using a ${\mu}$-controller. This equipment was fabricated by using a high brightness LEDs and a ATmega 128, and designed to enable us to control irradiation timer, intensity and reservation. Especially, to control the light irradiation frequency, and to control the change of output value, TLC5941 was used. Control stage is divided into 4 step by program. Consequently, the current value could be controlled by the change of level in Continue Wave(CW) and the output of a high brightness LEDs could be controlled, stage by stage. In this paper, the designed device was used to find out how a high brightness LEDs light source affects the skin wound of a small animal. In result, compared with none light irradiation animal, the lower incidence of inflammation and faster recovery was shown in light irradiation animal.

In this paper, we report on a study of the electrode/electrolyte interfaces of MCMB/$LiCoO_2$ cell using Ion-chromatography. The cells for the experiments were preconditioned by cycling three times and stabilized at OCV of 3.0V 4.35V and 4.5V. The stabilized cathode electrode was used for surface characterization investigations. Concerning the $LiCoO_2$/electrolyte interfaces, the result obtained have shown the presence of $F^-\;and\;CO_3^{2-}$ on the surface of cathode electrode as well as increasing the concentration of ions as cell voltage increase.

Automation systems for higher performance and efficiency in railway electrification systems are driving ever more demanding needs for new condition monitering systems which can consist of sensors connected to the substation and catenary systems. This paper reviews the recently developed condition monitering system, based on a IP network-based multi-agent system, wireless communications and sensor networks for railway electrification system. A new concept for information management, condition monitoring and control of power transmission are considered as railway automation in electrification system.

전차선로는 각 경간마다 양단으로 지지점을 갖게 되므로 지지점에서의 탄성도와 경간중앙에서의 탄성도가 같을 수 없다. 이 두 지점의 탄성도의 차이를 나타내는 계수로 불균일율이라는 지수가 정의되어 널리 사용되어왔다. 이 불균일율은 전차선 장력과 경간 길이에 크게 영향 받는다. 그러나 드로퍼의 배치 간격에 따라서도 달라진다. 이 불균일율은 전차선로의 동적인 특성을 예측하는 하나의 변수로 활용되고 결국 집전 성능을 상대 비교하여 판단하는데 활용되며, 직접적으로는 드로퍼 간격을 설계하는데 있어서 중요한 파라미터로 사용되고 있다. 그러나 이 불균일율은 전차선로의 동적 성능을 적절히 반영하는 지수가 되지 못하고 있다고 판단하고 있다. 불균일율의 정의인 경간 중앙에서의 탄성율과 경간 끝 지정의 탄성율과의 단순한 차이 값의 크기만으로는 드로퍼의 수와 배치 간격에 따른 특성을 반영하지 못한다고 판단된다. 이를 여러 가지 다양한 케이스를 가정하여 탄성도 해석 프로그램을 이용하여 평가해본다. 평가 결과를 토대로 드로퍼 수에 따른 보정계수를 갖는 새로운 불균일율 평가 지수를 제시하고자 하며 이 새로운 지수가 기존의 지수보다 보다 집전 성능을 판단하는데 유용한 데이터가 됨을 증명한다. 또한 아울러 불균일율이 다른 가선 구조에 대하여 팬터그래프의 1단과 2단의 스프링 계수의 크기와의 조합과 상환 관계에 따른 집전 성능의 차이를 전차선로-팬터그래프 동역학 시뮬레이션 프로그램을 사용하여 평가한다. 이를 통하여 불균일율에 따른 보다 적절한 팬터그래프 동역학 모델을 제시한다.

본 논문에서는 지중배전(22.9kV) 선로에 사용되는 지상변압기를 대상으로 수행한 방열해석 및 개선과 변압기수명연장에 관한 검토 결과를 수록하였다. 변압기의 열화메커니즘에 대한 문헌 조사를 통해 변압기 온도와 수명간의 관계를 작도하였는바, 수명 평가를 위한 핵심 인자로 열에 의한 절연지의 열화에 초점을 맞추었다. 기존 외함에 설치된 방열구중 상부 위치를 상부판에도 변경하는 경우 약25%의 통풍량 증가 효과를 기대할 수 있을 것으로 평가 되었으며 상부판과 내함 사이에 형성되던 고온 영역에서의 온도를 약$15^{\circ}C$정도 낮출 수 있는 것으로 나타났다. 절연지의 인장강도 변화로 평가한 수명예측 곡선에 따르면 약$10^{\circ}C$의 은도 저감은 약10배의 수명 연장 효과를 가져오는 것으로 나타난바, 본 연구에서 확인한 방열구의 위치 변경에 따른 지상기기 내부의 온도 저하는 변압기 수명을 연장하는데 일조할 것으로 기대된다. 기존 지상변압기에서의 방열구조를 통해 변압기 온도와 수명간의 관계를 작도하였는바, 수명 평가를 위한 핵심인자로 효과적으로 방열할 수 있는 새로운 외함의 구조 및 디자인을 제시하고 시뮬레이션을 통해 개선효과를 예측하였다. 또한, 개선된 모델을 가지고 실제 변압기를 제작한 후 부하를 인가하여 개선전과 후에 대한 방열효과를 실증시험을 통해 확인하였다.

In 2004, a department of engineering education was established at Virginia Tech and Purdue university in the United States. Innovation of engineering education for improving the quality of engineering college education has been progressing. Content of subject of engineering exploration was developed newly for engineering college freshmen. And, effect of a sustainable energy design project on academic achievement for engineering freshmen at Virginia Tech in 2006 was researched. The project was performed throughout a 6 weeks period with one by 50 minutes lecture by professor and one 90 minutes workshop by TAs (Teaching Assistants) every week. To analyze the data, statistical package SPSS (ver. 15.0) was used. In responses to an open-ended question about freshmen students' perceptions of their improvement in design skills, the 3 most identified skills were teamwork, design process, knowledge. In, Korea, an innovation relating to engineering curriculum, facility, instructional strategy and so on will be required.

Lateral Information Propagation Neural Networks (LIPN) is proposed for on-line interpolation. The proposed neural network technique is the real time computation method through the inter-node diffusion. In the network, a node corresponds to a state in the quantized input space. Through several simulation experiments, real time reconstruction of the nonlinear image information is processed.

For the safty driving of an automobile which is become individual requisites, a new Neural Network algorithm which recognized the load vehicles in real time is proposed. The proposed neural network technique is the real time computation method through the inter-node diffusion. The most reliable algorithm derived for real time recognition of vehicles, is a dynamic programming based algorithm based on sequence matching techniques that would process the data as it arrives and could therefore provide continuously updated neighbor information estimates.

Titanate nanotube(TNT)는 높은 비표면적과 우수한 물리화학적 특성을 가지고 있어 광촉매, 수소 저장재료, 태양전지용 전극재료 등에 적용되고 있다. 또한, 티타네이트 나노튜브는 전자 이동이 원활한 구조적 특징을 가지고 있어 리듐 이차전지용 호스트 재료로서 많은 연구가 진행 중이다. 이에 본 연구에서는 저온균일침전법으로 제조한 루틸상 $TiO_2$ 분말에 Lithium chloride를 1~10wt%를 동시에 첨가한 후 10M의 sodium hydroxide 수용액 내에서 수열합성하여 리튬이 도핑된 티타네이트 나노튜브를 제조하였다. 제조된 분말의 입자형상 및 크기는 전자주사 현미경을 이용하여 관찰하였으며, X-선 회절분석을 이용하여 리튬 첨가에 따른 결정상 변화를 관찰하였다. 또한 리튬이 도핑된 티타네이트 나노튜브의 전기화학적 특성 평가를 위해 양극 활물질 : 도전제 : 바인더를 75 : 20 : 5의 비율로 혼합한 후 coin cell을 제조하였고, potentiostat를 이용하여 용량 측정 및 cycle 특성을 실시하였다. 수열 합성법에 의해 형성된 입자는 직경 10nm, 길이 수 ${\mu}m$로 관찰되었으며, X-선 회절 시험 결과 LiO와 같은 이차상은 발견되지 않았다. 측정된 coin cell의 용량은 240mAh/g을 나타내었으나, 싸이클 특성이 빠르게 저하됨을 확인할 수 있었다.

Low-emissivity (low-e) coatings with visible transparency have attracted increased interest m reducing heat radiation loss through window panes from ecological and sustainable aspects. $TiO_2$-silver transparent thin films for low-e have good properties for UV and IR blocking as well as photocatalyst compared to that with commercial UV blocking films such as fluorine doped oxide (FTO), antimony doped tin oxide (ATO), etc. In this study, transparent $TiO_2$-silver thin films were prepared by successive ink-jet printing of commercial nano silver and $TiO_2$ sol. The $TiO_2$ sol, as ink for ink-jet printing, were synthesized by hydrothermal process in the autoclave externally pressurized with $N_2$ gas of 200 bar at $120^{\circ}C$ for 10 hrs. The synthesized $TiO_2$ sols were all formed with brookite phase and their particle size was several to 30 nm. At first nano sized silver sol was coated on glass substrate, after that $TiO_2$ sol was coated by ink-jet printing. With increasing coating thickness of $TiO_2$-silver multilayer by repeated ink-jet coating, the absorbance of UV region (under 400nm) and IR region (over 700nm) also increase reasonably, compared to that with commercial UV blocking films.

Carbon/polymer based composite electrodes were fabricated by using Super p. Black(SPB) as a conductor and polyvinylidene fluoride (PVDF) as a binder. This type of composite electrode are considered as excellent candidates for heating film and variable resistor applications. Aim of this work is the study of the Mechanical and Electrical properties on composite electrode by the contents of SPB and MWCNT, respectively. The composite electrode having 10~15 wt% of SPB show good electrical and mechanical properties. Mechanical and electrical properties are increased by the addition of MWCNT into the composite electrode.

1차원 구조를 갖는 나노 와이어들은 나노 소자를 구현하기 위한 building-block으로 많은 과학자들의 주목을 받고 있고 또한 연구되고 있다. 하지만 그것을 정확하게 위치시키고 일정한 간격으로 정렬시키기 위한 기술 개발은 아직도 해결해야 할 큰 과제로 남아 있다. 이 논문에서, 우리는 ahsing 기술과 표면 패터닝 기술을 이용하여 대면적의 실리콘웨이퍼 위에 DNA(deoxyribonucleic acid)를 기반으로 한 금 나노 와이어를 정확하게 위치시키고 일정한 간격으로 정렬시킬 수 있는 새로운 제어 기술을 제안한다. 먼저 우리는 포토 리소그래피 공정과 $O_2$ 플라즈마 ashing 기술을 이용하여 선폭을 100 nm로 감소 시켰다. 그리고 자기조립단분자막 (self-assembled monolayers; SAMs) 방법과 lift-off 공정을 반복함으로서 1-octadecyltrichlorosilane(OTS) 층과 aminopropylethoxysilane(APS) 층을 형성하였다. 마지막으로 DNA 용액을 샘플 표면 위에 도포하고 분자 빗질 방법으로 DNA를 한 방향으로 정렬 시켰고 금 나노입자 용액을 처리하였다. 그 결과 금 나노 와이어는 $10{\mu}m$ 간격으로 일정하게 정열 되었고, APS 층에만 정확하게 정렬되었다. 우리는 금 나노 와이어를 관찰하기 위하여 원자간력 현미경 (Atomic Force Microscope AFM)을 사용하였다.

$LiCoO_2$ powder was synthesized by Sol-Gel method using inorganic materials. The starting materials, $CH_3COOLi^*2H_2O\;and\;Co(CH_3COO)_2{^*}4H_2O$, were mixed in the atomic ratio Li/Co of 1 and dissolved in i-propanol with acetic acid. The solution was dried for gelation, and finally obtained the pre-powder. The pre-powder were studied by thermal analysis. Based on the TGA result, heat treatment was performed at various temperature(500 to $800^{\circ}C$) for 2h in air atmosphere. The crystal structure, morphology, electrochemical property were carried out using XRD, SEM, cyclic voltammetry(CV).

Because forest fire can give a serious damage to overhead conductors, the thorough understanding about sag behavior of burned conductor is very important in maintaining the transmission line safely. Therefore, a systematic investigation was carried out by heating method. As the heating temperature increases, drastic change of tensile strength of Al wire due to the softening of Al wire occurred. When Al wire is exposed to the flame(about $800^{\circ}C$) during only 13 seconds, the remained tensile strength of Al wire showed under 90%. and then sag of overhead conductor become deteriorated. The detailed results will be given in the text.

In this paper, the temperature distribution within ACSR conductor was precisely measured and examined, conducted as part of a serious of studies on large currents in transmission lines. According to measurements of the conductor temperature near a joint(sleeve and clamp), the electrical resistance of joint is lower than that of the same length conductor. The detailed results were presented in the text.

We observed new physical phenomia. The dispersion relation and the distributions of RF electric field in the corrugated wall waveguide are analyzed numerically. The measurement of the dispersion relation are obsered by a plunger method employed in the slow wave structure for linear accelerators.

This paper discusses the planarization process of thick copper film structure used for power supply device. Chemical mechanical polishing(CMP) has been used to remove a metal film and obtain a surface planarization which is essential for the semiconductor devices. For the thick metal removal, however, the long process time and other problems such as dishing, delamination and metal layer peeling are being issued, Compared to the traditional CMP process, Electro-chemical mechanical planarization(ECMP) is suggested to solve these problems. The two-step process composed of the ECMP and the conventional CMP is used for this experiment. The first step is the removal of several tens ${\mu}m$ of bulk copper on patterned wafer with ECMP process. The second step is the removal of residual copper layer aimed at a surface planarization. For more objective comparison, the traditional CMP was also performed. As an experimental result, total process time and process defects are extremely reduced by the two-step process.

Over-polishing is required to completely remove the material of top surface across whole wafer, in spite of a local dishing problem. This paper introduces the two-step CMP process using protective layer and high selectivity slurry, to reduce dishing amount and variation. The 30nm thick protective oxide layer was deposited on the pattern, and then polished with low selectivity slurry to partially remove the projected area while suppressing the removal rate of the recessed area. After the first step CMP process, high selectivity slurry was used to minimize the dishing amount and variation in pattern structure. Experimental result shows that two-step CMP process can be successfully applicable to reduce the dishing defect generated in over-polishing.

CMP가 1980년 IBM에 의해 반도체 웨이퍼의 표면 연마를 위해 적용된 후, 많은 연구 개발의 노력으로 반도체 집적회로의 제조 공정에서 필수 핵심기술이 되었으나, 소모자재(연마패드, 탄성지지대, 슬러리, 패드 컨디셔너)의 비용이 CMP 공정 비용의 70% 이상을 차지하는 등 제조단가가 높다는 단점을 극복할 수가 없었다. 특히, 고가의 슬러리가 차지하는 비중이 40% 이상을 넘고 있어, 슬러리 원액의 소모량을 줄이기 위한 연구들이 현재 활발히 연구 중이다. 슬러리의 변수로는 연마입자의 종류 및 특성, 용액의 pH, 연마입자의 슬러리내 안정성 등이 있다. 슬러리내 연마입자는 연마량과 균일도 측면에서 밀접한 관계를 가지고 있다. 또한, 연마제의 영향에 따라 연마율의 차이 즉, CMP 특성의 변화를 보이고 있기 때문에 투입량 또한 최적화가 필요하다. 본 연구에서는 새로운 연마제의 특성을 알아보기 위해 탈이온수(de-ionized water; DIW)에 $CeO_2,\;MnO_2,\;ZrO_2$ 등을 첨가한 후 분산시간에 따른 연마 특성과 atomic force microscopy (AFM)분석을 통해 표면 거칠기를 비교 분석하였다. 그리고, 세 가지 종류의 연마제를 각각 1wt%, 3wt%, 5wt% 첨가하여 산화막에 대한 CMP 특성을 알아본 후, scanning electron microscopy (SEM) 측정과 입도 분석을 통해 그 가능성을 알아보았다.

Cu CMP widely has been using for the formation of multilevel metal interconnects by the Cu damascene process. And lower dielectric constant materials are required for the below 45nm technology node. As the dielectric constant of dielectric materials are smaller, the strength of dielectric materials become weaker. Therefore these materials are easily damaged by high down pressure during conventional CMP. Also, technical problems such as surface scratches, delamination, dishing and erosion are also occurred. In order to overcome these problems in CMP, the ECMP (electro-chemical mechanical planarization) has been introduced. In this process, abrasive free electrolyte, soft pad and low down force were used. The electrolyte is one of important factor to solve these problems. Also, additives are required to improve the removal rate, uniformity, surface roughness, defects, and so on. In this study, KOH and $NaNO_3$ based electrolytes were used for Cu ECMP and the electrochemical behavior was evaluated by the potentiostat. Also, the Cu surface was observed by SEM as a function of applied voltage and chemical concentration.

Ruthenium (Ru) is a white metal and belongs to platinum group which is very stable chemically and has a high work function. It has been widely studied to apply Ru as an electrode material in memory devices and a Cu diffusion barrier metal for Cu interconnection due to good electrical conductivity and adhesion property to Cu layer. To planarize deposited Ru layer, chemical mechanical planarization(CMP) was suggested. However, abrasive particle can induce particle contamination on the Ru layer surface during CMP process. In this study, zeta potentials of Ru and interaction force of alumina particles with Ru substrate were measured as a function of pH. The etch rate and oxidation behavior were measured as a function of chemical concentration of several organic acids and other acidic and alkaline chemicals. PRE (particle removal efficiency) was also evaluated in cleaning chemical.