Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

A study on the crystallographic properties of ZnO thin films for FBAR

FBAR용 ZnO 박막의 결정학적 특성에 관한 연구

  • 금민종 (경원대학교 전기정보공학과) ;
  • 박원효 (경원대학교 전기정보공학과) ;
  • 윤영수 (경원대학교 전기정보공학과) ;
  • 최형욱 (경원대학교 전기정보공학과) ;
  • 신영화 (경원대학교 전기정보공학과) ;
  • 최동진 (경원대학교 전기정보공학과) ;
  • 김경환 (경원대학교 전기정보공학과)
  • Published : 2002.07.08
Download PDF
⟨ Previous Next ⟩

Abstract

Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.

Keywords