Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.07b
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- Pages.703-706
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- 2002
A study on the crystallographic properties of ZnO thin films for FBAR
FBAR용 ZnO 박막의 결정학적 특성에 관한 연구
Abstract
Piezoelectric thin film such as ZnO and AlN can be applicable to FBAR (Film Bulk Acoustic Resonator) device of thin film type and FBAR can be applicable to MMIC. The characteristic of FBAR device is variable according to the deposition conditions of piezoelectric thin film when preparation of thin film by sputtering method. In this study, we prepared ZnO thin film for FBAR using Facing Targets Sputtering apparatus which can be deposited fine Quality thin film because temperature increase of substrate due to the bombardment of high-energy particles can be restrained. And crystalline and c-axis preferred orientation of ZnO thin film with deposition conditions was investigated by XRD.