Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study of High-efficiency me-silicon solar cells for SiNx passivation

SiNx passivation에 따른 Solar Cell의 효율향상에 관한 연구

  • 고재경 (성균관대학교 정보통신공학부 신소재연구실) ;
  • 임동건 (성균관대학교 정보통신공학부 신소재연구실) ;
  • 김도영 (성균관대학교 정보통신공학부 신소재연구실) ;
  • 박성현 (성균관대학교 정보통신공학부 신소재연구실) ;
  • 박중현 (성균관대학교 정보통신공학부 신소재연구실) ;
  • 이준신 (성균관대학교 정보통신공학부 신소재연구실)
  • Published : 2002.07.08
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Abstract

The effectiveness of silicon nitride SiNx surface passivation is investigated and quantified. This study adopted single-layer antireflection (SLAR) coating of SiNx for efficiency improvement of solar cell. The silicon nitride films were deposited by means of plasma enhanced chemical vapor deposition (PECVD) in planar coil reactor. The process gases used were pure ammonia and a mixture of silane and helium. The thickness and the refractive index on the films were measured by ellipsometry and chemical bonds were determined by using an FT-IR equipment. This films obtained were analyzed in term of hydrogen content, refractive index for gas flow ratio $(NH_3/SiH_4)$, and efficiency of solar cell. The polycrystalline silicon solar cells passivated by silicon nitride shows efficiency above 12.8%.

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