In this paper, a system to measure treeing degradation phenomena in organic insulating materials, using an image sensor, is discussed. Using an image processing technique, tree features immediately after tree initiation as well as changes in the configuration of the tree were measured. which up to now have been extremely difficult to observe by conventional visual methods. As a result, it was possible to record the image of tree propagation immediately after its first appearance, and to describe the specific characteristics of tree growth in terms of the length, the degraded area and the sequential images.

The frequence characteristic of capacity and dissipation factor of ceramic varistor has been studied in the range from 10 KHz to 1 MHz. From the results, the equivalent circuit was determined. The equivalent circuit is consisted of three blocks, such as grain boundary layer, depletion layer and conduction layer. The resistance and capacitance of each lock are 10 K$\Omega$ and 65nF, 15$\Omega$ and 6nF, 0.5$\Omega$ respectively.

In this paper, a system to measure tree degradation of three dimensional phenomena in organic insulating materials using image processing system is discussed. Using a computerized tomography method, volume of tree immediately after tree initiation, as well as changes in the configuration of the tree were measured, which up to now have been difficult to measure. The specimens used an acrylic acid resin. As a result, it was possible to record the cross sections of the tree, and to describe the volume of the tree by the three dimensional measurement.

Bi$\_$0.7/Pb$\_$0.3/Sr$_1$Ca$_1$Cu$\_$1.8/Ox thick films were screen printed on magnesia(MgO), silver and yttrium stabilized zirconia (YSZ) substrates and were sintered in a boat with cover to prevent the evaporation. The high-Tc phase increase and the low-Tc phase and Ca$_2$PbO$_4$ decrease with an increase in sintering temperature from 835$^{\circ}C$ to 860$^{\circ}C$. YSZ substrate interact strongly with the oxide resulting in poor superconductor, while the Ag and MgO substrates were satisfactory to make screen printed superconductors. The Bi$\_$0.7/Pb$\_$0.3/Sr$_1$Ca$_1$Cu$\_$1.8/Ox thick films screen printed both on Ag and MgO substrates show high Tc phase of ~85% and Tc of 96K.

In the ($Bi_{1-x}Pb_{x}$)$_2$$Sr_2$$Ca_2$$Cu_{3.6}$$O_{y}$ (x=0∼0.5) superconductors, DTA and XRD-pattern analyses were performed to obviousely define optimal calcining and sintering temperature. And, understanding behaviors of High-Tc phase with preparation condition of superconductors, that is, calcining and sintering temperature, sintering time, and variation of Pb contents, in order to make single phase of superconductor, microstructure and its composition were analyzed with SEM, XRD, and EDAX. continuously, the cause of phase transition was define with synthetically studying mutural relation between measured electrical resistivity and current density. Also, in order to design enhancement of critical current density, Jc required for realization, samples varied with pressing condition were made, and measured its, Jc.

In this study, a new sintered specimens of Y$\_$1-x/Sm$\_$x/Ba$_2$Cu$_3$O$\_$y/ is composed by substituting Sm for a part of Y in the YBa$_2$Cu$_3$O$\_$y/ high Tc superconductor, in order to study of making (Y$.$Sm)-Ba-Cu-O system sintered specimens and their characteristics. An their change affected on superconductivity and their characteristics are studied by changing the x range of the composition rate. The resistances of electrical characteristics under the conditions of the composition and the temperature are measured by using Ac four probe method in the procedure of this experiments. And it is confirmed that the Meissner effect from the superconductivity of composed Sm system exists in the range of 0

Polycrystalline CdS films were grown on glass substrate with conducting indium tin oxide(ITO) by electrodeposition. The average size of the plate-shape grains o the CdS films was from 0.3um to 0.05um, and the adhesion to ITO was excellent. The optical band gap of the electrodeposited CdS films was in the range from 2.51eV to 2.68 eV. The optical transmittance was 80% and the electrical resistivity varied from 10$^3$ to 10$\^$5/$\Omega$-cm depending on the deposition condition.

In this study, we fabricated Plasma polymerized styrene thin films which used a new capacitive type apparatus. RE Power supply (13.56 MHz) was used and styrene monomer was adopted. After the preparation of thin films the molecular structure of Plasma polymerized styrene films was analyzed by some analyses as IR, FT-IR, Gas chromatography and so on.

This paper deals with the electric field sensor. A capacitive voltage sensor is designed and manufactured for measuring the very fast transients generated by operating disconnection switch in GIS. It is certified that the voltage sensor has a good specific characteristic in high frequency domain and is able to measure the very fast transients included the harmonic components of 200[MHz].

N-Channel polysilicon MOSFETs (W/L=20/1.5, 3, 5.10$\mu\textrm{m}$) were fabricated using RTP(Rapid Thermal Processor) and hydrogen passivation. The N+ Source, drain and gate were annealed and recrystallized using RTP at temperature of 1000$^{\circ}C$-1100$^{\circ}C$. But the active areas were now specially crystallized before growing the gate oxide. Without the hydrogen passivation, excellent transistor characteristics (ON/OFF=5${\times}$10$\^$6/, s=85mv/dec, I$\_$L/=51pA/$\mu\textrm{m}$) were obtained for 1.5$\mu\textrm{m}$ MOSFET. Also the transistor characteristics were improved by hydrogen passivation.

In this studies, structural, dielectrical piezoelectrical properties and temperature stability of 0.05Pb(Pb($Mg_{1/3}Nb_{2/3}$)$O_3$+ 0.95Pb($Zr_{0.53}Tio_{0.47}$)$O_3$+$\alpha$[wt%] $Cr_2O_3$ piezoelectric ceramics fabricated by the Hot-Press method were investigated. And Poisson ratios of the specimens were measured in order to see that they can be used as the substrates for energy-trapped devices. The specimens of which Poisson ratio was more than 3/1 had the $\alpha$ range 0.3~0.75, and piezoelectric properties were degraded in the range $\alpha$$\geq$0.75, and temperature stability was good in the $\alpha$ range 0.5~0.75. Accordingly, the optimal point of $Cr_2O_3$ additive weight is sure to be in the vicinity of 0.5[wt%].

In this study, (0.80-x)Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-$PbTiO_3$-Pb($Ni_\frac{1}{2}W_\frac{1}{2}$)$O_3$ 0.05$\leq$x$\leq$0.20) ceramics were fabricated by the mixed oxide method, the sintering temperature and time were 950∼1200[$^{\circ}C$], 2[hr], respectively. The dielectric and structural properties with composition and sintering temperature were investigated for the application as multilayer ceramic capacitors. Dielectric constant of 0.70PMN-0.2PT-0.10PNW composition with repeated calcination was increased rapidly. Increasing the Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-$PbTiO_3$-Pb($Ni_\frac{1}{2}W_\frac{1}{2}$)$O_3$ contents from 0.05 to 0.20 [mol], phase transition temperature was shifted from 68 to 2[$^{\circ}C$] and dielectric constant was decreased while sintered density was increased. In the specimens containing 0.10, 0.15[mol] of PNW, dielectri constants at room temperature were exhibited the highest values 11199, 10114, respectively. Resistivity of specimens were $10^{10}$ ∼ $10^{12}$($\Omega$.m) and there was no dependence on sintering temperature and composition.

(1-X)(Sr$\_$7/9/Pb$\_$2/9/)$\_$(1-y)/(Ca$\_$1/5/Mg$\_$4/5/)$\_$y/TiO$_3$+X(BiO$_2$O$_3$$.$3TiO$_2$) (y=0.145, 0$\leq$X$\leq$0.08) ceramics were fabricated by the mixed oxide method. The sintering temperature and time were 1180∼1230[$^{\circ}C$], 2[hr], respectly. The grain size were grown with increasing the contents of Bi$_2$O$_3$$.$3TiO$_2$, but decreased more and less in the specimens which had more than 0.04[mol].

This paper is studied on the sintering characteristics of Ni-Zn ferrites. The specimen ferrites was composed of 20 mol% NiO, 30mol% ZnO, 50 mol% Fe$_2$O$_3$, and 0.0025 mol%, 0.005 mol%, 0.01 mol% Nb$_2$O$\_$5/, Bi$_2$O$_3$, V$_2$O$\_$5/, wee used as minor additives. Sintering was carried out at 1100$^{\circ}C$. As results from the experiments, the high value of initial permeability of 6X10$^2$∼9X10$^2$ can be achieved at 500KHz∼1000KHz. The value of loss factor 1X10￣$^2$∼2X10$^2$ can be achieved at 500KHz∼1000KHz. The lowest 1/(${\mu}$XQ) value was obtained in the specimen with the addition of 0.005mol% fracyion for V$_2$O$\_$5/.

In this paper, we study the electrical conduction mechanism in Langmuir-Boldgett(LB) ultra thin films. The LB device has a metal/Lb films/metal sandwich structure, where metal is electrode. In our experiments, the temperature does not depend on the current at below 0$^{\circ}C$. This phenomena show that the electrical conduction current is a tunnel current inherent to LB ultra thin films.

$WSi_{x}$ film deposited on p+ polysilicon by low pressure chemical vapor deposition method were annealed by rapid thermal process, their properties have been investigated by measurements of electrical resistivity and Hall voltage and by analyses of phases and microstructure using X-ray diffraction and SEM technique. The electrical resistivity of the polycides consisting of the tungsten silicide and the p+ polysilicon decreases with the increase in annealing temperature due probably to the increase in grain size. unlike the polycides consisting of the $WSi_{x}$ and n+ polysilicon, however, the Hall voltage of the polycides consisting of $WSi_{x}$ and p+ polysilicon were positive for all specimens annealed as well as the as-deposited one, indicating the majority carrier in $WSi_{x}$. is hole and is independent of the annealing.

In this study, PN junction solar cell and P$\^$+/-N-N$\^$+/ BSF solar cell, using N-type(111), 10$\^$16/[atoms/cm$\^$-3/] wafer, were fabricated applying that ion implant method whose dose are 1E14, 1E15, 3E15 and its acceleration energy is 50Key, 100Key respectively. The impurity concentration of two types of front-side are 10$\^$18/[atoms/cm$\^$-3/] and back-side concentration for BSF solar cell is 10$\^$17/[atoms/cm$\^$-3/]. As a result of comparison for 2 typical types of cells out of various fabricated samples, open circuit voltage (Voc), short circuit current(Isc) of BSF solar cell are larger than those of PN solar cell by 48[%], 14[%]. Considering that the efficiency of BSF cell is 2.5[%] as well as PN solar cell's is 7.5[%], 10.0[%] of efficiency improvement effect can be obtained from BSF solar cell. Futhermore, in consequence of front-side impurity concentration change from 10$\^$17/[atoms/cm$\^$-3] to 10$\^$20/[atoms/cm$\^$-3/] alternately, the most ideal result can be expected when it is 10$\^$18/[atoms/cm$\^$-3/].

The behavior of charged particle in dielectrics have a many effects on characteristics of the insulating materials. In this paper, numerical analysis method by hopping model was investigated application of TSC. As the results, there was a difference between characteristics of TSC by dipole polarization. Physical constant of movable ion corresponding to the experimental results was evaluated and also. Numerical calculations of unsaturated TSC and I-V characteristics were carried out by was of hopping model.

This study investigated electrical characteristic of solids and liquid epoxy resins by measuring dielectric breakdown and dielectric loss when epoxy resins were exposed to a mixing cure. It was found that mixing epoxy resins were superior to dielectric breakdown and hardness and has shorter curing time compare with those of pure liquid epoxy resins.

In order to investigate the laser effects resulted from the behaviors of carriers for BOPP film, experiment of TSC were carried out on the specimen with 15[$\mu\textrm{m}$] thick irradiated by He-Ne laser. The TSC spectras were observed in the temperature range of -100[$^{\circ}C$] to 130[$^{\circ}C$] with the electric field of 20∼60[MV/m], had show four of the distinguished peak such as ${\alpha}$$_1$, ${\alpha}$$_2$, ${\beta}$ and ${\gamma}$, which appeared at 115, 80, 17 and -30[$^{\circ}C$] respectively. Specially, ${\alpha}$$_1$ was observed and anomalous TSC flowing in the same direction as the charging current on the high-electric field such as 50∼60[MV/m]. In according on the consequences obtained from the studies, the origin of ${\alpha}$$_1$peak was attributed to the detrapping process form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallow trap with 0.4[eV], in he amorphous regions.

In this paper, we studied and investigated as to temperature dependence of dielectric breakdown properties, and the dielectric breakdown properties, and deterioration-proof properties due to interface treatment effect. In the result, we knew that temperature dependence of dielectric breakdown strength due to filler content was decreased, identified that D.C. dielectric breakdown strength was improved at the filler content 50[%]. When the D.C. voltage was applied to the non silane and silane treated specimens deal with mechanical deterioration, the dielectric breakdown strength was improved at the 150[%].

In this study, we prepared plasma polymerized thin films as changing the composition rate of the Ar/CO$_2$, 0 to 100%, for analysing the influence of CO$_2$ gas in plasma polymerization. Power source was the RF frequence (13.56MHz), the monomers were styrene and MMA (Methyl-methacrylate), and substrates were glass and KBr(or NaCl) for IR spectroscopy. The molecular structure of plasma polymerized organic thin films was examined by IR, FT-IR, Gas chromatography and so forth.

For the purpose of fabricating of L-B Films, (N-alkyl pyridinium)-TCNQ(1:1) complex is synthesized. This complex is verified by U.V, I.R and elemental analyzer.