Achieving red light-emitting diodes with high quantum and luminous efficiency is required to fabricate the full-color organic electroluminescence display. In this work, we report that devices with 2.3,7,8,12,13,17,18-Octaethyl-21H,23H-porphine palladium (II) (PdOEP), doped into tris(8-Hydroxyquinolinato)-aluminum (III) (Alq3) show a narrow deep red emission (670nm). In addition, PdOEP has been used as host material in which red dyes such as 4-(Dicyanomethylene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM) doped in order to fabricate efficient red-emitting diodes.

ZnO thin films on silicon substrates have been deposited by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the effect of oxygen post-annealing treatment on the property of ZnO thin films, deposited film has been annealed at the substrate temperature of $440^{\circ}C$. After post-annealing treatment in the oxygen ambient, the stoichiometry of ZnO film has been characterized be improved which results in higher UV emission intensity of photoluminescence.

The PDP(Plasma Display Panel) barrier rib material on the glass substrate was patterned for fabrication of the PDP cell using Nd:YAG laser(1064 nm) which can generate the second(532 nm) and forth(266 nm) harmonic wave by HGM(harmonic generation modules). At a scan speed of 20 ${\mu}m/s$ with the second harmonic wave(532 nm) of Nd:YAG laser, the etching threshold laser fluence of the PDP material was 6.5 $mJ/cm^2$ and a sample(thickness = 180 ${\mu}m$) on the glass substrate was removed clearly at a laser fluence of 19.5 $mJ/cm^2$. In order to increase the throughput of the fabrication we divided a single-beam into multi-beams by using a metal mask between the sample and the focusing lens. As a result, 10 lines of PDP cell were formed by one laser beam scanning at a scan speed of 200 ${\mu}m/s$ and a laser fluence of 2.86 $J/cm^2$.

MgO thin films were deposited using $Mg(tmhd)_2$ as a precursor dissolved in a solvent by electrostatic spray pyrolysis. When a pure tetra hydro furan was used as a solvent, a large number of particles appeared on the MgO thin film surface due to homogeneous nucleation. However, by adding 1-butyl alcohol or 1-octyl alcohol to THF, homogeneous nucleation was restricted and the number density of the large particles was also drastically reduced. X-ray diffraction analysis showed that the MgO films had a (100) preferred orientation regardless of the type of solvents used. Characterization using Fourier Transformed-Infrared and spectroscopic photometer revealed that the crystallized MgO thin films on the glass substrate had a high optical transmittance (> 85 %) in the visible range. Discharge characteristics of MgO thin films deposited by ESP method on an alternating-current plasma display panel were compared with a MgO thin film prepared by reactive radio-frequency planar magnetron sputtering.

Influence of frequency and duty ratio on electro-optical characteristics are experimentally investigated in surface AC plasma display panels(AC-PDPs) by using the VDS(Versitile Driving Simulator)., in which electrode gap and width are 100 ${\mu}m$ and 260 ${\mu}m$, respectively. The filling gas is Ne-Xe gas mixture, and total pressure 400 Torr. It is found that the response time gets to be fast from 450 ns to 150 ns as pulse-off time of the sustain pulse decreases from 2 ${\mu}s$ to 0.2 ${\mu}s$. Also it is found that the IR(Infra Red) intensity and the luminous decreases as pulse-off time of the sustain pulse increases from 0.2 ${\mu}s$ to 2 ${\mu}s$.

The secondary electron emission coefficient y of MgO single crystal according to the gas mix-ture ratio of Xe, $N_2$ to Ne have been investigated by $\gamma$-focused ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest $\gamma$ for operating Ne(Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the $\gamma$ for gas mixtures are much smaller than pure Ne ions.

$Mg_{2-2x}Ti_xO_2$ films were prepared by e-beam evaporation method to be used as possible substitutes for the conventional MgO protective layer. The oxygen content in the films and in turn, the ratio of metal to oxygen gradually increased with increasing the $TiO_2$ content in the starting materials. The pure MgO films exhibited the crystallinity with strong (111) orientation. The $Mg_{2-2x}Ti_xO_2$ films, however, had the crystallinity with (311) preferred orientation. When the $[TiO_2/(MgO+TiO_2)]$ ratios of 0.1 and 0.15 were used, the deposited films exhibited the secondary electron emission yields improved by 50% compared to that of the conventional MgO protective layer, which resulted in reduction in discharge voltage by 12%.

Electro_optical characteristics in AC-PDP are confined by a lots of parameters. especially driving pulse shape is very important to improve AC-PDP's luminosity and efficiency. In that experiment measure the luminosity, IR(Infra Red) peak value and response time as the increase of 1st, 2rd sustain pulse width. The VDS(Versatile Driving Simulator -developed by kwangwoon university-) was used to make driving pulse shape. It is found that IR response time after displacement current, Luminosity and IR peak value are changed on account of 1st,2rd sustain pulse width.

Influence of sustain pulse-width on electro-luminous efficiency is experimentally investigated for surface discharge of AC-PDP. A square pulse with variable duty ratio and rising time of 300 ns has been used in the experiment. It is found that the firing voltage is decreased as the pulse-width is increased from 2 ${\mu}s$ to 8 ${\mu}s$ with sweeping frequency range of 10 kHz to 50 kHz. It has been found that the optimal sustain pulse-width is in the range of $3{\sim}4{\mu}s$ under driving frequency range of 30 kHz and 50 kHz, based on observation of memory coefficient, wall charge, and wall voltage as well as luminous efficiency.

After the square type reset pulse, the condition of remaining wall charge has been experimentally investigated in AC-PDP with VDS (Versatile Driving Simulator) system, in which arbitrary driving waveform and sequence can be used. After the self-discharge process, almost wall charges are eliminated. But some wall charges are not and its quantity is dependent on the voltage of the reset pulse. When the voltage of the reset pulse is growing, its quantity is decreased. But if the voltage of the reset pulse is above 300V, the wall voltage due to remaining wall charge is constant and its value is found out 6V. Also it is found that its polarity is always same with the one made by the reset pulse. It means that the polarity is not changed by the self-discharge.

An active-matrix LCD using thin film transistors (TFT) has been widely recognized as having potential for high-quality color fiat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate signal distortion and pixel charging capability, which are the most critical limiting factors for high-quality TFT-LCDs. In addition, PDAST can estimate voltage distributions in common electrode which can affect pixel voltage and feed-through voltage. Since PDAST can simulate the gate, data and the pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of common electrode voltage can be effectively analyzed. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

A-Si:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly-Si films were achieved by various anneal techniques ; isothermal, RTA, and excimer laser anneal. The TFT on as-grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from $200^{\circ}C$ to $1000^{\circ}C$. The TFT on poly-Si showed an improved $I_{on}/I_{off}$ ratio of $10^6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly-Si TFTs.

we analyzed multiple ray tracing in the highly scattering optical transmission(HSOT) polymer plate by means of the Monte carlo simulation. Light transmission behavior in the light guide was simulated by a 3-dimensional ray tracing program considering scattering angle given by the Mie theory and mean free path. To improve the uniformity of the conventional HSOT backlight unit, We employed additionally dot patterns. For the proposed structure, we calculated the light transmission behavior and obtained a bright and uniform backlight unit for a large size LCD panel of more than 12 inch.

In this study, we investigated the pretilt angle generation and liquid crystal (LC) alignment by ultraviolet (UV) exposure during imidization of polyimide on the polymer with side chain. The generated pretilt angle of nematic (N) LC using in-situ photo-alignment method was smaller than that of the conventional UV photo-alignment method. Also, the generated pretilt angle of NLC tends to increase by annealing.

A new photo-alignment material, copoly (PM4Ch-ChMA), copoly (poly (4-methacryloyloxy) chalcone-chalconemethacryl) was synthesized and the electro-optical (EO) characteristics for the photo-aligned vertically aligned (VA)-LC display (LCD) were investigated. The monodomain alignment of the NLC for the photo-aligned VA-LCD by linearly polarized UV exposure on the photo-dimerized copoly (PM4Ch-ChMA) surfaces was observed. Excellent voltage-transmittance characteristics for the photo-aligned VA-LCD by UV exposure for 1 min. on the copoly (PM4Ch-ChMA) surfaces were achieved. The response time of the photo-aligned VA-LCD by UV exposure on for 1 min. the copoly (PM4Ch-ChMA) surfaces was about 39.3 ms. The response time for the photo-aligned VA-LCD decreased with increasing UV exposure time.

We fabricated general photo diode, surface etched photo diode and floating gate MOSFET by CMOS process. In a design stage, we expect that surface etched photo diode will be improved as to photo sensitivity. However, because the surface of silicon was damaged in etching process, the surface etched diode had a high dark current as well as low photo current level. Finally, we examined the current-voltage properties for the floating gate MOSFET on n-well and confirmed that the device can be act as an efficient photo-sensor. The floating gate MOSFET was operated in parasitic bipolar transistor mode.

In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as a pumping beam and a semiconductor laser at 780nm as a probing beam. The PB for the variable thickness of thin films was investigated. The thickness of the thin films is about $0.4{\mu}m$, $0.92{\mu}m$, $1.4{\mu}m$, $2.0{\mu}m$, respectively. The experimental result of PB in chalcogenide thin films was represented higher PB in the thickness of thin film, $0.92{\mu}m$. It was meant to represent higher PB in the thickness of the film that was made closely the optimal thickness, $0.96{\mu}m$. The optimal thickness of thin film, $0.96{\mu}m$ was calculated by the penetration depth of the pumping light Also, the PB in thickness of $0.92{\mu}m$ was obtained almost two times higher 0.15 than other thickness of thin films.

A passband-flattening technique based on Fourier optics concept for phased-array wavelength router is presented. For easy control of optical power in each waveguide without phase correction, misaligned array waveguides are used. BPM simulation results indicate that flat passband is as wide as 75 % of the channel spacing with the insertion loss penalty of about 6 dB and with the crosstalk of about -28 dB.

All-optical NOR logic device was realized by use of two pump signals with a single wavelength and a semiconductor optical amplifier(SOA). Specially, Mach-Zehnder(MZ) modulator was used for an external modulation of the pump signals. To obtain the sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier(EDFA) at the input of the SOA. Pump and probe signals are obtained from a DFB laser diode(${\lambda}_p$=1554 nm) and a tunable laser diode(${\lambda}_s$=1535 nm), respectively. The operation characteristics of the NOR logic device are successfully measured and demonstrated at the modulation frequency of 4.83 MHz.

To improve characteristics of optical devices that used be WDM system optimally, we investigated characteristics of two types structures that consisted of non-uniform thickness Quantum well. They have high characteristic temperature and 3dB bandwidth of spontaneous emission are 57nm, 50nm respectively, which are 1.4times, 1.3times wider than conventional structure.