A study on CO gas sensing Characteristics of Pt-SiC $SnO_2$-pt-SiC Schottky Diodes

Pt 및 Pt-$SnO_2$를 전극으로 하는 SiC 쇼트키 다이오드의 CO 가스 감응 특성

A carbon monoxide gas sensor utilizing Pt-SiC, Pt-SnO2-SiC diode structure was fabricated. Since the operating temperature for silicon devices in limited to 200oC, sensor which employ the silicon substrate can not at high temperature. In this study, CO gas sensor operating at high temperature which utilize SiC semiconductor as a substrate was developed. Since the SiC is the semiconductor with wide band gap. the sensor at above $700^{\circ}C$. Carbon monoxide-sensing behavior of Pt-SiC, Pt-SnO2-SiC diode is systematically compared and analyzed as a function of carbon monoxide concentration and temperature by I-V and ${\Delta}$I-t method under steady-state and transient conditions.