Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2002.07b
- /
- Pages.739-742
- /
- 2002
The Fabrication of SOB SOI Structures with Buried Cavity for Bulk Micro Machining Applications
- Kim, Jae-Min (School of Information System Engineering, Dongseo University) ;
- Lee, Jong-Chun (Kyungnam College of Information and Technology) ;
- Chung, Gwiy-Sang (School of Information System Engineering, Dongseo University)
- Published : 2002.07.08
Abstract
This paper described on the fabrication of microstructures by DRIE(deep reactive ion etching). SOI(Si-on-insulator) electric devices with buried cavities are fabricated by SDB technology and electrochemical etch-stop. The cavity was fabricated the upper handling wafer by Si anisotropic etch technique. SDB process was performed to seal the fabricated cavity under vacuum condition at -760 mmHg. In the SDB process, captured air and moisture inside of the cavities were removed by making channels towards outside. After annealing(