Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The preferred orientation and morphology characteristics of AlN thin films prepared by RF power under Room Temperature process

저온공정을 이용한 AlN 박막의 우선배향성과 모폴로지에 관한 연구

  • Oh, Su-Young (Department of Information and Communication, Sungkyunkwan University) ;
  • Lee, Tae-Yong (Department of Information and Communication, Sungkyunkwan University) ;
  • Kim, Eung-Kwon (Department of Information and Communication, Sungkyunkwan University) ;
  • Kang, Hyun-Il (Department of Information and Communication, Sungkyunkwan University) ;
  • Song, Joon-Tae (Department of Information and Communication, Sungkyunkwan University)
  • 오수영 (성균관대학교 정보통신공학과) ;
  • 이태용 (성균관대학교 정보통신공학과) ;
  • 김응권 (성균관대학교 정보통신공학과) ;
  • 강현일 (성균관대학교 정보통신공학과) ;
  • 송준태 (성균관대학교 정보통신공학과)
  • Published : 2007.11.01
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Abstract

AlN is used a wide variety of applications such as electroacoustic devices, blue diode and metal-insulator-semiconductor structures. AlN thin films were deposited on Si substrates by rf sputter technique with low temperature process. The orientation and morphology of AlN thin films at various power in the range from 150 to 300 w was studied. X-ray diffraction (XRD), full width at half-maximum (FWHM) and field emission scanning electron microscopy were employed to characterize the deposited films. The c-axis orientation along (002) Plane at experimental results was enhanced with the increasing of the rf power from 150 to 300 w and the surface morphology of the films showed a homogeneous and nano-sized microstructure.

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