Characteristics of indium zinc oxide thin films with input power and film thickness

투입전력 및 두께 변화 조건에 따른 Indium zinc oxide 박막의 특성

  • 임유승 (경원대학교 전기공학과) ;
  • 김상모 (경원대학교 전기공학과) ;
  • 금민종 (플라즈마 응용표면기술 응용센터) ;
  • 손인환 (신성대학 디지털 전기계열) ;
  • 장경욱 (경원대학교 전기공학과) ;
  • 김경환 (경원대학교 전기공학과)
  • Published : 2007.11.01

Abstract

We prepared indium zinc oxide (IZO) thin film for cathode electrode such as an application of flat panel display by using the facing targets sputtering (FTS) method at room temperature. The effects of input power and film thickness were investigated with respect to physical and optical properties of films such as deposition rate, electrical properties, microstructure and transmittance. We could obtain properties of IZO thin films of under $10^{-3}\;{\Omega}-cm$ in resistivity and the thin films of over 90% in transmittance. Also, we obtained IZO thin films which were an amorphous structure.

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