Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.11a
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- Pages.287-287
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- 2007
Effects of lanthanum doping on ferroelectric properties of direct-patternable $Bi_{4-x}La_xTi_3O_{12}$ films prepared by photochemical metal-organic deposition
- Park, Hyeong-Ho (Yonsei Univ.) ;
- Kim, Hyun-Cheol (Yonsei Univ.) ;
- Park, Hyung-Ho (Yonsei Univ.) ;
- Kim, Tae-Song (Korea Institute of Science and Technology)
- Published : 2007.11.01
Abstract
The ferroelectric and electric properties of UV-irradiated bismuth lanthanum titanate (BLT) films prepared using photosensitive starting precursors were characterized. The effects of lanthanum doping on ferroelectric and electric properties were investigated by polarization-electric field hysteresis loops and leakage current-voltage measurements. X-ray diffractometer and ellipsometry were served to provide the information about the crystalline structure and thickness of the films after annealing. The images of the surface microstructure and direct-patterned BLT films were observed by using scanning electron microscopy. The effects of lanthanum doping on the electric properties of direct-pattern able BLT films and their direct-patterning were studied.