Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Rapid thermal annealing effect on electrical and optical properties of Indium Zinc Tin Oxide grown by RF sputter and Indium Aluminum Zinc Oxide grown by co-sputtering methode

RF sputter를 이용하여 성장시킨 IZTO박막과 Co-sputter 방법을 이용하여 성장시킨 IAZO 박막의 급속 열처리 효과

  • Park, Young-Seok (Department of Information and Nano Materials Engineering, Kumoh National Institute of Technology) ;
  • Kim, Han-Ki (Department of Information and Nano Materials Engineering, Kumoh National Institute of Technology)
  • 박용석 (금오공과대학교, 정보나노소재공학) ;
  • 김한기 (금오공과대학교, 정보나노소재공학)
  • Published : 2007.11.01
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Abstract

The rapid thermal annealing effect of transparent IZTO(indium zinc oxide) and IAZO(indium alminium zinc oxide) films grown on glass substrate for solar cell or flat panel displays(FPDs) was studied. We prepared IZTO using RF magnetron sputtering and IAZO using DC co-sputtering method. Subsequently, using rapid thermal annealing(RTA) system, prepared IZTO and IAZO films were annealed at 300, 400, 500, $600^{\circ}C$ for 90sec. In addition, Electrical and optical characteristics were measured by Hall effect measurement and UV/Vis spectrometer examinations, respectively. To analyze structural properties and surface smoothness of the IZTO and IAZO films, XRD and SEM examinations were performed, respectively. It was shown that IZTO and IAZO films exhibited microcrystalline structure over $400^{\circ}C$ and amorphous structural regardless of RTA temperature, respectively.

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