Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Realization and Electrical-Optical Properties of AZO/p-Si UV Photodetector

AZO/p-Si 자외선 수광소자의 전기적.광학적 특성

  • Oh, Sang-Hyun (School of Electrical Electronic and Information Engineering, Wonkwang Univ.) ;
  • Jeong, Yun-Hwan (School of Electrical Electronic and Information Engineering, Wonkwang Univ.) ;
  • Chen, Hao (School of Electrical Electronic and Information Engineering, Wonkwang Univ.) ;
  • Park, Choon-Bae (School of Electrical Electronic and Information Engineering, Wonkwang Univ.)
  • 오상현 (원광대학교 전기전자 및 정보공학부) ;
  • 정윤환 (원광대학교 전기전자 및 정보공학부) ;
  • 진호 (원광대학교 전기전자 및 정보공학부) ;
  • 박춘배 (원광대학교 전기전자 및 정보공학부)
  • Published : 2007.11.01
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Abstract

Investigation of improving the properties of UV photodetector which uses the wide bandgap of ZnO are under active progress. In this paper, transparent conducting aluminum-doped Zinc oxide films(AZO) were prepared by rf magnetron sputtering on glass(corning 1737) and p-Si substrate, were then annealed at temperature $400^{\circ}C$ for 2hr. The AZO thin films were deposited by RF sputtering system. HF power and work pressure is 120 W and 15 mTorr, respectively, and the purity of AZO target is 5N. The AZO thin films were deposited at 300, 400, $500^{\circ}C$, and $600^{\circ}C$. For sample deposited at $400^{\circ}C$, we observed best $V_r-I_{ph}$ of 0.94 mA and good transmittance.

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