Comparison of Hole Mobility Characteristics of Single Channel and Dual Channel Si/SiGe Structure

단일채널 Strained Si/SiGe 구조와 이중채널 Strained Si/SiGe 구조의 이동도 특성 비교

Hole mobility characteristics of single surface channel and dual channel Si/SiGe structure are compared, where the former one consists of a relaxed SiGe buffer layer and a tensile strained Si layer on top, and for dual channel structure a compressively strained SiGe layer is inserted between them. Due to the difference of hole mobility enhancement factors of layers between them, hole mobility characteristics with respect to the Si cap thickness shows the opposite tend. Hole mobility increases with thicker Si cap for single channel structure, whereas it decreases with thicker Si cap for dual channel structure.