Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Study of Hafnium silicate by Nitrogen Annealing Treatment

질소 처리를 통한 Hafnium silicate 박막의 특성 평가

  • Suh, Dong-Chan (Department of Ceramic Engineering, Yonsei University) ;
  • Cho, Young-Dae (Department of Ceramic Engineering, Yonsei University) ;
  • Ko, Dae-Hong (Department of Ceramic Engineering, Yonsei University)
  • 서동찬 (연세대학교 세라믹공학과) ;
  • 조영대 (연세대학교 세라믹공학과) ;
  • 고대홍 (연세대학교 세라믹공학과)
  • Published : 2007.11.01
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Abstract

We investigated the characteristics of the Hafnium silicate (Hf-silicate) film which is grown by ALD (atomic layer deposition). The Hf-silicate films that were annealed by the RTP. The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas and $NH_3$ gas annealing, were investigated by XPS, TEM and I-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The tendency of nitnitridation in NO gas and $NH_3$ is different. Leakage current is improved in post NO gas annealing.

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