Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.11a
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- Pages.144-144
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- 2007
Dependences of die Power ratio on the properties in GZOB/Au multilayers
전력비 변화에 따른 Au Multilayer 위에 증착한 GZOB 박막의 특성
- Lee, Jong-Hwan (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
- Lee, Kyu-Il (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
- Kim, Bong-Suk (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
- Lee, Tae-Yong (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
- Kang, Hyun-Il (Department of Information and Communication Engineering, SungKyunKwan Univ.) ;
- Song, Joon-Tae (Department of Information and Communication Engineering, SungKyunKwan Univ.)
- 이종환 (정보통신공학부, 성균관대학교) ;
- 이규일 (정보통신공학부, 성균관대학교) ;
- 김봉석 (정보통신공학부, 성균관대학교) ;
- 이태용 (정보통신공학부, 성균관대학교) ;
- 강현일 (정보통신공학부, 성균관대학교) ;
- 송준태 (정보통신공학부, 성균관대학교)
- Published : 2007.11.01
Abstract
Effects of power ratio on the electrical and optical properties of Au based Ga-, B- codoped ZnO(GZOB) thin films were investigated. GZOB thin films on Au based PC flexible substrate were deposited at various power in the range from 50 to 125 W by DC magnetron sputtering. Au layer was fabricated to achieve good electrical conductivity. The presence of additional boron impurity leads to improve structural defects. Thus, the c-axis orientation along (002) plane was enhanced with the increasing of power ratio and the surface morphology of the films showed a homogeneous and nano-sized microstructure. GZOB films grown at 125W were investigated a low resistivity value of