Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.11a
- /
- Pages.73-74
- /
- 2007
Carrier Mobility Enhancement in Strained-Si-on-Insulator (sSOI) n-/p-MOSFETs
Strained-SOI(sSOI) n-/p-MOSFET에서 캐리어 이동도 증가
- Kim, Kwan-Su (Department of Electronic materials engineering, Kwangwoon Univ.) ;
- Jung, Myung-Ho (Department of Electronic materials engineering, Kwangwoon Univ.) ;
- Choi, Chel-Jong (Nano-Bio Electronic Devices Team, Electronics and Telecommunications Research Institute) ;
- Cho, Won-Ju (Department of Electronic materials engineering, Kwangwoon Univ.)
- Published : 2007.11.01
Abstract
We fabricated strained-SOI(sSOI) n-/p-MOSFETs and investigated the electron/hole mobility characteristics. The subthreshold characteristics of sSOI MOSFETs were similar to those of conventional SOI MOSFET. However, The electron mobility of sSOI nMOSFETs was larger than that of the conventional SOI nMOSFETs. These mobility enhancement effects are attributed to the subband modulation of silicon conduction band.