Dielectric Properties with Temperature Variation of $(Ba_xSr_{1-x})$TiO$_3$Thin Films

$(Ba_xSr_{1-x})$TiO$_3$박막의 온도 변화에 따른 유전 특성

  • 김덕규 (원광대학교 전자재료공학과) ;
  • 전장배 (원광대학교 전자재료공학과) ;
  • 송민종 (광주보건전문대학 의공학과) ;
  • 박춘배 (원광대학교 전자재료공학과)
  • Published : 1997.04.01

Abstract

(Ba$_{x}$Sr$_{l-x}$)TiO$_3$(BST) thin fi1ms with various Ba/Sr ratios were deposited on Pt(80nm)/SiO$_2$(100nm)/Si by RF magnetron sputtering. BST thin films which have x=0.6, 0.5, 0.4 were studied dielectric properties with temperature variation. The frequency was used from 100Hz to 1MHz for measuring dielectric constant. The measurement conditions of dielectric constant with Temperature Variation were 1KHz and 2$0^{\circ}C$. As a result, the dielectric constant of BST thin film was about 425 and loss factor was 0.013. Also, with increasing Temperature, the dielectric constants of BST thin films were gradually decreased.sed.

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