Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1997.04a
- /
- Pages.236-238
- /
- 1997
Design of Cellular Power Amplifier Using a SifSiGe HBT
- Hyoung, Chang-Hee (Dept. of Electronic Eng., Kwangwoon Univ.) ;
- Klm, Nam-Young (Dept. of Electronic Eng., Kwangwoon Unlv.) ;
- Han, Tae-Hyeon (Semiconductor Division, ETRI) ;
- Lee, Soo-Min (Semiconductor Division, ETRI) ;
- Cho, Deok-Ho (Semiconductor Division, ETRI)
- Published : 1997.04.01
Abstract
A cellular power amplifier using an APCVD(Atmospheric Pressure Chemical Vapor Deposition)-grown SiGe base HBT of ETRI has been designed with a linear simulation CAD. The Si/SiGe HBT with an emitter area of 2
Keywords