Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1997.04a
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- Pages.180-182
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- 1997
Growth of GaN by Reaction of Ga and NH$_3$
Ga과 NH$_3$ 의 직접반응에 의한 GaN의 성장
Abstract
GaN crystals were deposited by tile direct reaction between ammonia and gallium at 105
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