Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1997.04a
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- Pages.1-7
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- 1997
A Study on Fabrication and Properties the GaAs/Si Solar Cell using MOCVD
MOCVD를 이용한 GaAs/Si태양전지의 제작과 특성에 관한 연구
Abstract
The goals of the present study lie in presenting the direction of researches and developments for GaAs based solar cells, as well as in taking a step toward the establishment of GaAs MOCVD technologies. On the other hand, the GaAs on Si substrates has been recognized as a lightweight alternative to pure GaAs substrate for space application, because its density is less than the 7alf of GaAs or Ge. So, GaAs/Si has twofold weight advantage to GaAs monolithic cell. It was concluded that the development the development of MOCVD technologies should be ahead of GaAs solar cells.
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