The PVA (poly-vinyl alcohol) insulators were spun coated onto ITO coated glass substrates with the capacitors of Glass/ITO/PVA/Al structure. The effects of PVA concentrations (3.0, 4.0 and 5.0 wt%) on the morphology and electrical properties of the films were investigated. As the concentration of PVA increased from 3.0 to 5.0 wt%, the leakage current of device decreased from 17.1 to 0.23 pA. From the AFM measurement, the RMS value decreased with increasing PVA concentration, showing the improvement of insulator film roughness. The capacitances of the films with PVA concentrations of 4.0 and 5.0 wt% were about 28.1 and 24.2 nF, respectively. The lowest leakage current of 1.77 PA was obtained at the film thickness of 117.5 nm for the device with fixed PVA concentration of 5.0 wt%.

Field-emission characteristics of carbon nanotubes(CNTs), which were grown on conical-type tungsten micro-tips by using an electrophoretic deposition(EPD) method, were examined. The EPD method proved to be convenient to manipulate and arrange CNTs from well dispersed suspensions onto such tip-type substrates. The growth rate of CNTs was proportional to the applied d.c. bias voltage and the process time. It was observed from the Raman study that the EPDproduced CNTs showed better crystal qualities with the Raman intensity ratio( $I_D$/$I_G$) of 0.41-0.42 than the CVD-produced CNTs and their crystal qualities could be further improved by thermal annealing. The electron emitters based on the EPDCNTs showed excellent field emission properties, such as the threshold voltage for electron emission of about 620 V and the maximum emission current of about 345 ${\mu}A$. In addition, the EPD-CNTs exhibited the stable long-term(up to 40 h) emission capability and the emission stability was enhanced by thermal annealing.

Extreme ultraviolet (EUV) lithography using 13.5 nm wavelengths is expected to be adopted as a mass production technology for 32 nm half pitch and below. One of the new issues introduced by EUV lithography is the shadowing effect. Mask shadowing is a unique phenomenon caused by using mirror-based mask with an oblique incident angle of light. This results in a horizontal-vertical (H-V) biasing effect and ellipticity in the contact hole pattern. To minimize the shadowing effect, a refilled mask is an available option. The concept of refilled mask structure can be implemented by partial etching into the multilayer and then refilling the trench with an absorber material. The simulations were carried out to confirm the possibility of application of refilled mask in 32 nm line-and-space pattern under the condition of preproduction tool. The effect of sidewall angle in refilled mask is evaluated on image contrast and critical dimension (CD) on the wafer. We also simulated the effect of refilled absorber thickness on aerial image, H-V CD bias, and overlapping process window. Finally, we concluded that the refilled absorber thickness for minimizing shadowing effect should be thinner than etched depth.

Nanoimprint lithography (NIL) is one of the most versatile and promising technology for micro/nano-patterning due to its simplicity, high throughput and low cost. Recently, one of the major trends of NIL is large-area patterning. Especially, the research of the application of NIL to TFT-LCD field has been increasing. Technical difficulties to keep the uniformity of the residual layer, however, become severer as the imprinting area increases. In this paper we performed a numerical study for a large area NIL (the $2^nd$ generation TFT-LCD glass substrate ($370{\times}470$ mm)) by using finite element method. First, a simple model considering the surrounding wall was established in order to simulate effectively and reduce the computing time. Then, the volume of fluid (VOF) and grid deformation method were utilized to calculate the free surfaces of the resist flow based on an Eulerian grid system. From the simulation, the velocity fields and the imprinting pressure during the filling process in the NIL were analyzed, and the effect of the surrounding wall and the uniformity of residual layer were investigated.

We have investigated the effect of surface roughness of TCO substrate on the characteristics of OLED (organic light emitting diodes) devices. In order to control the surface roughness of AZO thin films, we have processed photo-lithography and reactive ion etching. The micro-size patterned mask was used, and the etching depth was controlled by changing etching time. The surface morphology of the AZO thin film was observed by FESEM and atomic force microscopy (AFM). And then, organic materials and cathode electrode were sequentially deposited on the AZO thin films. Device structure was AZO/${\alpha}$-NPD/DPVB/$Alq_3$/LiF/Al. The DPVB was used as a blue emitting material. The electrical characteristics such as current density vs. voltage and luminescence vs. voltage of OLED devices were measured by using spectrometer. The current vs. voltage and luminance vs. voltage characteristics were systematically degraded with increasing surface roughness. Furthermore, the retention test clearly presented that the reliability of OLED devices was directly influenced with the surface roughness, which could be interpreted in terms of the concentration of the electric field on the weak and thin organic layers caused by the poor step coverage.

In this paper, optical deflection of laser scattering has been investigated based on Rayleigh criterion for crystalline silicon wafer in solar cell. A laser scattering mechanism is newly designed using light scattering properties in silicon wafer. Intensity distributions of laser scattering are different, depending on the incident angle of laser computed from Rayleigh criterion. In case of the incident angle satisfied with the criterion, they are asymmetric. Also, their specular reflection angle is shifted to unpredicted ones. These phenomena are in accordance with previous theories of laser scattering. The optical deflection of laser scattering is experimentally identified with the designed laser scattering mechanism. Its mathematical model is presented from the geometric relationship of laser scattering. It is shown that the optical deflection of laser scattering agree with the presented model, exclusive of grazing angles which is satisfied with Rayleigh criterion.

According to recent changes in industry for the semiconductor device, a gap between patterns in wafer is getting narrow. And this narrow gap makes a failure of uniform deposition between center and edge on the wafer. In this paper, for solving this problem, we analyze and manipulate the gas flow inside of the HDP CVD chamber by using CFD(Computational Fluid Dynamics). This simulation includes design manipulations in heights of the chamber and shape of center nozzle in the upper side of the chamber. The result of simulation shows 1.28 uniformity which is lower 3% than original uniformity.

This paper explores a new approach for modeling of decision-making problems that involve uncertain, time-dependent and sequence-dependent processes which can be applied to semiconductor industry. In the proposed approach, which is based on probability theory, approximate sample paths are required to be specified by probability and statistic characteristics. Completely specified sample paths are seen to be elementary and fundamental outcomes of the related experiment. The proposed approach is suitable for modeling real processes more accurately. A case study is applied to a single item production planning problem with continuous and uncertain demand and the solution obtained by the approximate path specification method shows less computational efforts and practically desirable features. The application possibility and general plan of the proposed approach in semiconductor manufacturing process is also described in the paper.

As the price of image acquisition component becomes low enough, the compact and easily accessible handheld devices are generally equipped with image acquisition functionality. This trend speeds up various applications in diverse areas such as image related services and software. Therefore users strongly need to identify their images effectively and efficiently so that the duplicated images are perceived as one physical entity. In order to handle this environment, we propose a number of methods that generate image identifiers utilizing fundamental image features. In this paper, we analyze the identifier generation methods in terms of various size patterns, especially for tiny size cases, since the small images does not contain abundant pixels for feature extraction. In this paper, experimental evaluation over identifier generation methods' behavior according to different sizes is demonstrated.

The wavelet transform was adopted as the transform for JPEG2000. However, wavelet has weakness about smoothness along the contours and limited directional information. So we use to other transform, called contourlet transform in compression. Objective quality assessment methods currently used Peak signal to noise Ratio(PSNR). But that is not very well matched to perceived visual quality. So new image quality assessment is required. In this paper, we propose a new method for image compression based on the contourlet transform, which has been recently introduced. In addition we evaluated compression image quality using PSNR and SSIM. Finally contourlet transform has a good result about images with smooth contours and SSIM is good method for image evaluation compared to PSNR.

Detecting marker coordinates is important in augmented reality system based on tag. If a marker is not detected, objects can't be augmented. In this paper, we propose a noise reduction method for augmented reality. Using a blue color space to HIS color transformation was performed on the binary. Erosion operator and the dilation operator of the binary images were performed. Experimental results show that proposed method produces a tag image recognizable in various light environments. And using the area of the rectangle, the labeling could be detected through the tag. Tag recognition rate is improved by removing noise.

X-ray absorption rate and multiplication factor of X-ray detector were calculated with Garfield code. High Z (= atomic number) was important factor to increase the absorption rate but low Z is also important to increase the multiplication. Five different gas composition were examined under the condition of 1400 V bias and 400 um gap. Xe 100% gas showed the highest absorption rate and He 96% + isobutene 4% showed the highest multiplication.

According to recent changes in industry for semiconductor devices, a low-temperature treatment has become a necessity. These changes relate to size refinement and the development of new materials. While variation in cooling efficiency does not affect the yield when using a high-temperature treatment, uniform cooling efficiency is necessary avoid "inconsistencies/bends" in low temperature treatments. However it is difficult to increase temperature stabilization in low temperature treatments. In this paper, using CFD (Computer Fluid Dynamics), we analyze and manipulate the design and input of the low-temperature system to attempt to control for temperature variations within the quartz tube, of which airflow appears to be a predominant factor. This simulation includes variable inputs such as airflow rate, head pressure, and design manipulations in the S.C.U. (Super Cooling Unit).

The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering and effects of working pressure and oxygen contents on the electrical properties were investigated. XRD spectra showed a preferred orientation along the c-axis and a minimum FWHM for the 70mTorr. From the surface analysis (AFM), the number of crystal grain of AZO thin film increased as working pressure increased. The film deposited with 70mTorr of working pressure showed n-type semiconductor characteristic having suitable resistivity $-1.59{\times}10^{-2}{\Omega}cm$, carrier concentration $-10.1{\times}10^{19}cm^{-3}$, and mobility $-4.35cm^2V^{-1}s^{-1}$ while other films by 7 mTorr, 20 mTorr of working pressure closed to metallic films. The films including the oxygen represent stoichiometric composition similar to the oxide. The transmittance of the film was over 85% in the visible light range regardless of the changes in working pressure and oxygen contents.

The transparent electrode properties of ITO films deposited by RF magnetron sputtering with process pressure were investigated. The ITO thin films was deposited on a glass substrate using a target with 3in diameter sintered at a ratio of $In_2O_3$ : $SnO_2$ (9 : 1). 200-nm-thick ITO thin films were manufactured by various process pressures ($2.0{\times}10^{-2}$, $7.0{\times}10^{-3}$ and $2.0{\times}10^{-3}$ Torr). The optical transmittance and resistivity of the deposited ITO thin films showed a relatively satisfactory result under $10^{-2}$ Torr. For high process pressure, the optical transmittance was below 80%, while for low process pressure, the optical transmittance was above 85%. As a result of of mobility, resistivity and carrier concentration by Hall measurement, we obtained satisfactory properties to apply into a transparent conducting thin film.

Charged micro-particles are widely used as the key components for many electrical applications such as an e-paper, a touch panel, a printer toner and an electronic ink. Among them, the e-paper is an emerging reflective type display using the charged particles that has the advantages of the extremely low power consumption and sunlight readability. To create images on the e-paper, we confine black positively-charged and white negatively-charged particles between bottom and top electrodes and selectively apply the electric field. When the Coulomb force by an applied electric field is greater than the adhesion force between the charged particle and the electrode, the particles' transition happens resulting in the change of color between black and white. Therefore, the adhesion force is a very important factor for designing and estimating e-paper's operation. In this study, we constructed a basic model for particle's transition and an adhesion force equation describing particle's transition with three different forces: electrostatic image force, Van der Waals force and gravitational force. The simulation results showed that the gravitational force is negligible for the interesting range for the charge and the radius, and the adhesion force can be strongly dependent on the particle's charge and radius.

Fast incipient fault diagnosis is becoming one of the key requirements for economical and optimal process operation management in high-tech industries. Artificial neural networks have been used to detect faults for a number of years and shown to be highly successful in this application area. This paper presents a novel test technique for fault detection and classification for module process of TFT-LCD manufacture using support vector machines (SVMs). In order to evaluate SVMs, this paper examines the performance of the proposed method by comparing it with that of multilayer perception, one of the artificial neural network techniques, based on real benchmarking data.

In this study, the 3- dimensional (3-D) learning contents are suggested using 'Augmented Reality' instead of existing 2-dimensional (2-D) learning methods. At the present, there are some 2-D learning methods using texts, image, pictures, and videos called e-learning. However, these one-way 2-D methods have some disadvantages such as declining learner's immersion and concentration. Thus, the 3-D learning contents using 'Augmented Reality' are suggested to compensate the disadvantages. According to the development of information technology (IT), the augmented reality has many applications to the era of ubiquitous. However, there are some disadvantages when learners use these contents as following; non-augmenting by partially hiding from makers and declining concentration by patterns of the makers. In this study, the beneficial marker which can solve this non-augmenting phenomenon is suggested.