Fabrication and electrical and mechanical properties of piezoelectric micro bending actuators (PMBA) using sol-gel-multi-coated thick PZT films and MEMS processes were investigated. PMBA could be used for design and fabrication of micro fluidic devices, for example, micro-pumps, micro dispensers, and so on. PMBA were fabricated using 2 um thick PZT films on Pt (350 nm)/$SiO_2$ (500 nm)/Si ($300\mu\textrm{m}$) substrates and MEMS processes. 7 types of PMBA were fabricated with areas of silicon diaphragms, PZT films and top electrodes. When the sizes of silicon diaphragms, PZT films and Pt top electrodes were reduced from 3000$\times$$1389\mu\textrm{m}$, 4000$\times$$1000\mu\textrm{m}$ and 4000$\times$$900\mu\textrm{m}$ down to 14%, 14% and 11 % of them, respectively, the center displacements of PMBA were decreased from 0.68 um to 0.10 um at 5 Hz and 12 Vpp. So, PMBA with large areas showed larger displacements than PMBA with small areas and experimental results were also good agreement with the plate and shell theory.

A new wafer level packaging scheme is presented as an alternative to MEMS package. The proof-of-concept structure is fabricated and evaluated to confirm the feasibility of the idea for MEMS wafer level packaging. The scheme of this work is developed using an electroplated tin (Sn) solder. The critical difference over conventional ones is that wafers are laterally bonded by solder reflow after LEGO-like assembly. This lateral bonding scheme has merits basically in morphological insensitivity and its better bonding strength over conventional ones and also enables not only the hermetic sealing but also its electrical interconnection solving an open-circuit problem by notching through via-hole. The bonding strength of the lateral bonding is over 30 Mpa as evaluated under shear and the hermeticity of the encapsulation is 2.0$\times10^{-9}$mbar.$l$/sec as examined by pressurized Helium leak rate. Results show that the new scheme is feasible and could be an alternative method for high yield wafer level packaging.

This research has been progressed for adhesive improvement of the Polyimide/Buffer layer/Cu at the COF(Chip On Film) which induced as the alternative plan about high concentration of a circuit or substrates according to demands of miniaturization and high efficiency of various electronic equipment. RF plasma equipment was applied to when plama pretreatment was performed for improvement of adhesive strength of PI and Cr as the buffer layer. Experimental fluents were a species of the buffer layer, depositied time and the ratio of $O_2$/Ar when performed to plasma pretreatment. The results are that Ni was superior to Cr at peel test according to a species of the buffer layer, peel strength and Cu THK were showed proportional relation to deposition structure of the same buffer layer and sample of the Cr depositied time(30 sec) and Cu depositied time(20 min) was showed good adhesion to peel test according to Cr's depositied time and Cu's depositied time. When perform PI's plasma pretreatment peel strength and $O_2$/Ar ratio were showed proportional relation. But $O_2$/Ar(2/5) was best condition since then decreased.

This paper presents a 3-dimensional diffusion simulation with adaptive solution strategy. The developed diffusion simulator VLSIDIF-3 was designed to re-refine areas. Refine scheme was calculated by the difference of doping concentration between any of two nodes. Each element is greater than tolerance and redo diffusion process until error is tolerable. Numerical experiment in low doping diffusion problem showed that this adaptive solution strategy is very efficient in both memory and time, and expected this scheme would be more powerful in complex diffusion model.

The defect formation energy of boron nitride (BN) nanotubes is investigated using molecular-dynamics simulation. Although the defect with tetragon-octagon pairs (4-88-4) is favored in the flat cap of BN nanotubes, BN clusters, and the growth of BN nanotubes, the formation energy of the 4-88-4 defect is significantly higher than that of the pentagon-heptagon pairs (5-77-5) defect in BN nanotubes. The 5-77-5 defect reduces the effect of the structural distortion caused by the 4-88-4 defect, in spite of homoelemental bonds.

The responses of hypothetical silicon nanotubes under torsion have been investigated using an atomistic simulation based on the Tersoff potential. A torque, proportional to the deformation within Hooke's law, resulted in the ribbon-like flattened shapes and eventually led to a breaking of hypothetical silicon nanotubes. Each shape change of hypothetical silicon nanotubes corresponded to an abrupt energy change and a singularity in the strain energy curve as a function of the external tangential force, torque, or twisted angle. The dynamics of silicon nanotubes under torsion can be modelled in the continuum elasticity theory.

A blue light emitting diode with 8 periods InGaN/GaN multi-quantum well structure grown by metal-organic chemical vapor deposition was fabricated with the inclusion of the metal-interconnection process in order to integrate the chips for light lamp. The quantum well structure provides the blue light photoluminescence peaked at 479.2 nm at room temperature. As decreasing the temperature to 20 K, the main peak was shifted to 469.7 nm and a minor peak at 441.9 nm appeared indicating the quantum dot formation in quantum wells. The current-voltage measurement for the fabricated LED chips shows that the metal-interconnection provides good current path with ohmic resistance of 41 $\Omega$.

This study presents numerical solutions of three-dimensional laminar flow-field formed by photo resist flow in a slit-coater model. We discuss on the governing equations, laminar viscosities and the computational model applied in our numerical calculation and some results. We prove that the structure of tapered-cavity aid to make uniform pressure-field and boundary effect is an important problem to improve coating uniformity. In view of uniformity improvement, it is necessary to study for the structure of cavity and flow path.

The aim of this study is the confirmation of the coating uniformity affected by the surface tension and wall attachment angle in a slit-coater model. In this work, we use the commercial code (Fluent) to solve the two-phase flow formed with air and photo resist numerically. The results show that the surface tension is the most important factor to determine the coating efficiency in the view of coating uniformity, and the coating uniformity is 2% for our slit-coater model and conditions. To improve the coating uniformity, it is in need of minimization of the sidewall effect of slit-coater.

Highly oriented diamond (HOD) films in polycrystalline can be grown on the (100) silicon substrate by microwave plasma CVD. Bias enhanced nucleation (BEN) method was adopted for highly oriented diamond deposition with high nucleation density and uniformity. The substrate was biased up to -250[Vdc] and bias time required for forming a diamond film was varied up to 25 minutes. Diamond was deposited by using $\textrm{CH}_4$/CO and $H_2$ mixture gases by microwave plasma CVD. Nucleation density and degree of orientation of the diamond films were studied by SEM. Thermal conductivity of the diamond films was ∼5.27[W/cm.K] measured by $3\omega$ method.